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irf620

Abstract: IRF620 HARRIS IFR622 1RF621 irf623 irf622
Text: Procedures. Copyright © Harris Corporation 1997 , File Number 1577 2 IRF620, 1RF621 IRF622, IRF623 , j = 150°C, lg D = 5.0A, d lSD/d t= 100A/|j.s 350 2.3 1.8 V ns M-C 5-3 IRF620, 1RF621 , ÌRF622 , VOLTAGE (V) F IG U R E S . O UTPUT CHARACTERISTICS 5-4 IRF620, 1RF621 , ÌRF622, ÌRF623 Typical , SOURCE VOLTAGE 5-5 IRF620, 1RF621 , ÌRF622, ÌRF623 Typical Performance Curves Unless Otherwise


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PDF IRF620, IRF621, IRF622, IRF623 TA9600. RF621, RF622, RF623 irf620 IRF620 HARRIS IFR622 1RF621 irf623 irf622
IRF413

Abstract: 1RF530 samsung irf540 RF543 IRF449 IRF460 BS250F 1RF620 IRF448 1rf630
Text: 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 ±20 250 150 2.0 4.0 0. 8 10 2. 5 5.0


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PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 IRF413 1RF530 samsung irf540 RF543 IRF449 IRF460 BS250F 1RF620 IRF448 1rf630
1RF540

Abstract: 1RF620 IRF449 1RF530 RF543 1rf521 IRF461 IRF352 IRF353 IRF360
Text: 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 ±20 250 150 2.0 4.0 0. 8 10 2. 5 5.0


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PDF Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3300 O-220AB 1RF540 1RF620 IRF449 1RF530 RF543 1rf521 IRF461 IRF352 IRF353 IRF360
1RF540

Abstract: 1RF620 RF543 1RF640 IRF614 IRF540 IRF542 LM3661TL-1.25 IRF532 IRF530
Text: 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 ±20 250 150 2.0 4.0 0. 8 10 2. 5 5.0


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PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF540 1RF620 RF543 1RF640 IRF614 IRF540 IRF542 LM3661TL-1.25 IRF532
1RF620

Abstract: 1RF540 1RF630 1RF640 1RF530 IRF625 1RF520 RF543 SD211 TD-12
Text: 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 ±20 250 150 2.0 4.0 0. 8 10 2. 5 5.0


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PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF620 1RF540 1RF630 1RF640 1RF530 IRF625 1RF520 RF543 TD-12
1RF640

Abstract: irf810 1rf740 1RF540 1RF840 1RF630 IRFAE50 IRF530 RF523 IRF541
Text: 2.0 4.0 0. 8 10 2. 5 5.0 10 1.3 2.5 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 Â


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PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF640 irf810 1rf740 1RF540 1RF840 1RF630 IRFAE50 IRF541
1RF530

Abstract: 1RF540 1rf520 RF543 LM3661TL-1.25 IRF533 IRF542 IRF543 IRF610 RF523
Text: 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 ±20 250 150 2.0 4.0 0. 8 10 2. 5 5.0


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PDF 1RF522 O-220AB RF523 IRF530 IRF630 IRF631 T0-220AB 1RF530 1RF540 1rf520 RF543 LM3661TL-1.25 IRF533 IRF542 IRF543 IRF610
1RF630

Abstract: irf810 1RF540 1RF530 1rf740 1RF620 RF543 ferranti 1RF634 BS107PT
Text: 10 2. 5 5.0 10 1.3 2.5 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 ±20 250 150


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PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF630 irf810 1RF540 1RF530 1rf740 1RF620 RF543 ferranti 1RF634 BS107PT
1RF530

Abstract: 1RF540 1rf630 RF543 1RF620 TD-12 SD212 SD211 SD210 LM3661TL-1.25
Text: 600 300 80 25 T0-220AB 1RF621 SILICONIX » 150 ±20 5 40 ±100 ±20 250 150 2.0 4.0 0. 8 10 2. 5 5.0


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PDF Ta-2510) SD210 TD-12 SD211 SD212 S0213 O-220AB IRF630 IRF631 1RF530 1RF540 1rf630 RF543 1RF620 TD-12 LM3661TL-1.25
1RFBG30

Abstract: 1RF6215 IRF4905 IRF9540N IRF9Z34N 90616 IRFbf30 P-channel power irf9z24n
Text: International I© R Rectifier HEXFET® Power MOSFETs V(BR)DSS Part Number d >D Continuous Drain-to- Source ®DS(on| R0 PD Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Resistance Voltage 25°C Resistance Dissipation (°C/W) (W) (A) (V) (A) (H Fax r on Case Demand 0 « TM » Number Key Through-Hole Packages IRFBF30 IRFBG20 1RFBG30 P-Channel IRF9Z24N IRF9Z34N IRF5305 IRF4905 IRF9530N IRF9540N 1RF52I0 1RF6215 -55 -55 -55 -55 -100 -100 -100 -150


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PDF IRFBF30 IRFBG20 1RFBG30 IRF9Z24N IRF9Z34N IRF5305 IRF4905 IRF9530N IRF9540N 1RF52I0 1RF6215 90616 IRFbf30 P-channel power
ISOWATT-220

Abstract: BU210A ISOWATT220 mtp15n05
Text: IRF150 IRFP150 IRFP150FI SGS100MA010D1 SGS150MA010D1 IRF623 IRF623FI IRF621 1RF621FI IRF622 IRF622FI


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PDF O-220 ISOWATT220 ISOWATT220 STH107N50 STH10N50 STHI10N50 STHI10N50FI ISOWATT-220 BU210A mtp15n05
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