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1N6641JANTXV - Bulk (Alt: JANTXV1N6641) 1N6641JANTXV ECAD Model
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Microchip Technology Inc
1N6641JANTXV Diode Switching 50V 0.3A 2-Pin Case D - Bag (Alt: JANTXV1N6641) 1N6641JANTXV ECAD Model
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Sensitron Semiconductors
1N6641JANTXV Diode Switching 75V 0.3A 2-Pin DO-35 - Bulk (Alt: JANTXV1N6641) 1N6641JANTXV ECAD Model
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1N6641+JANTXV datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
1N6641+JANTXV 1N6641+JANTXV ECAD Model Defense Electronics Supply Center 300mA Iout, 75V Vrrm Fast Recovery Rectifier Scan PDF

1N6641+JANTXV Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
609g

Abstract: 1N4150 metallurgically 1N6641 1N6640 JANS1N4150UR-1 JANS1N6640US 1N6639US GENERAL SEMICONDUCTOR SM 3b diode 1N6641US 1N6641 equivalent
Text: , SILICON, SWITCHING, TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US JAN, JANTX, JANTXV , indicated with a contrasting color band to denote the cathode end. The prefixes JAN, JANTX, JANTXV , and , . JANS devices which are laser marked shall also include serialization. The prefixes JAN, JANTX, JANTXV , Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF , E-IV of MIL-PRF-19500) 2 JANS level JANTXV and JANTX level Not required Not required


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PDF MIL-PRF-19500/609G 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-PRF-19500. 609g 1N4150 metallurgically 1N6641 1N6640 JANS1N4150UR-1 JANS1N6640US 1N6639US GENERAL SEMICONDUCTOR SM 3b diode 1N6641US 1N6641 equivalent
003S5

Abstract: ATI 1026 Sn 4011 DIODE MARKING EJL 1N6641 1n6640 "cross reference" 1N6641US 1N6640US 1N6640 1N6639US
Text: , 1N6639US, 1N6640US, AND 1N6641US JANTX, JANTXV , AND JANS This specification is approved for use by all , -19500/609A 4.3 Screening (JAMS. JANTX. AND JANTXV levels only). Screening shall be in accordance with table , (see table II of MIL-S-19500 Measurement JANS level JANTX and JANTXV levels 3C 1/ Thermal impedance , table [Va (JANS) and table IVb (JAN, JANTX, and JANTXV ) of MIL-S-Î9500. Electrical measurements , inspection, table IVb (JAN. JANTX and JANTXV of MIL-S-19500. Subgroup Method Condition 3 1037 Ta = room


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PDF HIL-S-19500/609A MIL-S-19500/609 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-S-19500/231. 1N4150-1 003S5 ATI 1026 Sn 4011 DIODE MARKING EJL 1N6641 1n6640 "cross reference" 1N6640US 1N6640 1N6639US
1N6641

Abstract: No abstract text available
Text: 1N6641+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I(O) Max.(A) Output Current300m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time5.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)200m @V(RM) (V) (Test Condition)50 I(RM) Max.(A) Reverse Current100n @V(R) (V)(Test Condition)50 I(RM) Max.(A) Pk. Rev. Current100u @V(R) (V) (Test Condition) @Temp. (øC) (Test Condition)150â


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PDF 1N6641 Current300m Voltage75 Current100n Current100u StyleDO-35 ent100u
1997 - 1N6639 JANTXV

Abstract: 1N6640US JANS 1N6640 JANTX 1N6641 1N6640US 1N6640 1N6641US 1N6639US 1N6639 1N4150
Text: 1N6639 1N6640 1N6641 FEATURES · Available in axial leaded and surface mount configurations · Ultra Fast Reverse Recovery Time · Very low Capacitance · Metallurgically Bonded · Non-cavity glass package · Available as JANTX, JANTXV and JANS per MIL-S-19500/609 · Replacement for 1N4150 Types 300 mAmp 75-100 Volts 4 nsec Computer Switching Diode MAXIMUM RATINGS @ 25°C ° Type Number Reverse Voltage VBR VRWM IO Volts 100 100 75 75 75 75 1N6639 1N6639US 1N6640


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PDF 1N6639 1N6640 1N6641 MIL-S-19500/609 1N4150 1N6639US 1N6640US 1N6639 JANTXV 1N6640US JANS 1N6640 JANTX 1N6641 1N6640US 1N6640 1N6641US 1N6639US 1N6639
1N6641

Abstract: No abstract text available
Text: · 1N6639 thru 1N6641 AVAILABLE IN JAN, JANTX, JANTXV , AND JANS PER MIL-PRF-19500/609 · SWITCHING DIODES · NON-CAVITY GLASS PACKAGE · METALLURGY ALLY BONDED 1N 6639 1 N 6640 1N6641 MAXIMUM RATINGS Operating Temperature: -65"C to +175°C Storage Temperature: -65°C to +175"C Operating Current: 300 mA Derating: 4.6 nrW'C Above TEC = +110°C Surge Current: tFSM = 2.5A, Pw = 8.3ms 0.056/0.075 1.42/1.« & POLARITY BAND (CATHODE) 3504.57 ELECTRICAL CHARACTERISTICS © 25°C, unless otherwise specified. V


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PDF 1N6639 1N6641 MIL-PRF-19500/609 1N6641 -100Q IN6639 IN6641
2004 - 1N6639

Abstract: 1N6638 melf diode D-5D 1N6641
Text: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. A 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U SIGNAL OR COMPUTER DIODE 1N6638 THRU 1N6643 · Switching Diode · Hermetic, non-cavity glass package · Metallurgically bonded · Upscreen to JANTX, JANTXV per MIL-PRF-19500/578,609 available Physical dimensions: Axial lead similar to Do-35 and surface mount similar to (D-5D) Maximum ratings TA =+25o C: Types VBR VRWM Io IFSM Tp=1/120 s A(pk) 2.5 2.5 2.5 2.5 2.5 2.5 TSTG , TJ o RJL L


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PDF 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U 1N6638 1N6643 MIL-PRF-19500/578 Do-35 1N6639 melf diode D-5D 1N6641
1N6641

Abstract: No abstract text available
Text: • 1N6639 thru 1N6641AVAILABLE INJAN, PER MIL-PRF-19500/609 1N6639 JANTX, JANTXV , AND JANS 1N6640 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE 1N6641 • METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65° to +175° C C Storage Temperature: -65° to +175° C C Operating Current: 300 mA Derating: 3 mA/° Above T L = +75° C C@ = L = 3/8” Surge Current: IFSM = 2.5A, Pw = 8.3ms POLARITY BAND (CATHODE) 0.140/0.180 3.55


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PDF 1N6639 1N6641AVAILABLE MIL-PRF-19500/609 1N6639 1N6640 1N6641 IN6639 1N6641
1N6641

Abstract: No abstract text available
Text: · 1N6639 thru 1N6641AVAILABLE IN JAN, JANTX, JANTXV , AND JANS PER MIL-PRF-19500/609 · SWITCHING DIODES · NON-CAVITY GLASS PACKAGE · METALLURGICALLY BONDED 1N6639 1N6640 1N6641 MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA Derating: 4.6 mA/°C Above TEC = +110°C Surge Current: lPSM = 2.5A, Pw = 8.3ms ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. V BRR © 10 M a v RWM 1 R1 § T a = +2S°C TYPES 1 R2 e t a


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PDF 1N6639 1N6641AVAILABLE MIL-PRF-19500/609 1N6640 1N6641 1NG639 IN6639 1N6641
2004 - 1c4148

Abstract: 1N6640 melf diode D-5D 1N6643 JANTXV 1n6640u r20V 1N6643 1N6639 1N6638U 1N6638
Text: 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4081, REV. A SIGNAL OR COMPUTER DIODE 1N6638 THRU 1N6643 · Switching Diode · Hermetic, non-cavity glass package · Metallurgically bonded · Upscreen to JANTX, JANTXV per MIL-PRF-19500/578,609 available Physical dimensions: Axial lead similar to Do-35 and surface mount similar to (D-5D) Maximum ratings TA =+25o C: Types VBR VRWM Io 1N6638,1N6638U 1N6639,1N6639U 1N6640,1N6640U


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PDF 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U 1N6638 1N6643 MIL-PRF-19500/578 Do-35 1c4148 1N6640 melf diode D-5D 1N6643 JANTXV 1n6640u r20V 1N6643 1N6639 1N6638U
2003 - 1N6640

Abstract: 1N6641 1N6639
Text: · 1N6639 thru 1N6641AVAILABLE IN JAN, PER MIL-PRF-19500/609 1N6639 JANTX, JANTXV , AND JANS 1N6640 · SWITCHING DIODES · NON-CAVITY GLASS PACKAGE 1N6641 · METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA Derating: 3 mA/°C Above TL = +75°C@ = L = 3/8" Surge Current: IFSM = 2.5A, Pw = 8.3ms POLARITY BAND (CATHODE) 0.140/0.180 3.55/4.57 1.00 25.4 0.018/0.022 0.46


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PDF 1N6639 1N6641AVAILABLE MIL-PRF-19500/609 1N6639 1N6640 1N6641 IN6639 1N6640 1N6641
2001 - 1N6640

Abstract: 1N6641 1n6641a 1N6639
Text: 1N6639 · 1N6639 thru 1N6641AVAILABLE IN JAN, JANTX, JANTXV , AND JANS PER MIL-PRF-19500/609 1N6640 · SWITCHING DIODES · NON-CAVITY GLASS PACKAGE 1N6641 · METALLURGICALLY BONDED MAXIMUM RATINGS 0.056/0.075 1.42/1.91 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA Derating: 3 mA/°C Above TL = +75°C@ = L = 3/8" Surge Current: IFSM = 2.5A, Pw = 8.3ms POLARITY BAND (CATHODE) 0.140/0.180 3.55/4.57 1.00 25.4 0.018/0.022 0.46


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PDF 1N6639 1N6639 1N6641AVAILABLE MIL-PRF-19500/609 1N6640 1N6641 IN6639 1N6640 1N6641 1n6641a
2013 - 1N6641

Abstract: No abstract text available
Text: JANTX1N6638 JANTXV JANTXV1N6638 SJ SJ6638 SX SX6638 SV SV6638 JANS JANS1N6638 SS SS6638 *Parts


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PDF 1N6638/US 1N6642/US MIL-PRF-19500/578, MIL-PRF19500/578, 1N6641
2009 - 1N6641

Abstract: No abstract text available
Text: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL PRF 19500/578 & /609 • Switching Diodes • Non Cavity Glass Plackage • Category I Metallurgically Bonded Maximum Ratings Operating Temperature: -65°C to +175°C Storage Temperature: Operating Current: Thermal Resistance: -65°C to +175°C 300mA (RӨJEC): U & US 40 °C


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PDF 1N6638 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U 1N6639U 1N6640U 1N6641
2009 - MILPRF19500/578

Abstract: 1N6641
Text: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features · Available in JAN, JAN TX, JANTXV per MILPRF19500/578 & /609 · Switching Diodes · NonCavity Glass Plackage · Category I Metallurgically Bonded Maximum Ratings Operating Temperature: -65°C to +175°C Storage Temperature: Operating Current: Derating: Surge Current: -65°C to +175°C 300mA Thermal Resistance: (RJEC): U & US 40 °C/W maximum


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PDF 1N6638 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U 1N6639U 1N6640U MILPRF19500/578 1N6641
2012 - jantx1n6638

Abstract: JANTXV1N6638U 1N6641
Text: 1N 1N6638 JAN JAN1N6638 JANTX JANTX1N6638 JANTXV JANTXV1N6638 SJ SJ6638 SX SX6638 SV SV6638 JANS


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PDF 1N6638/US 1N6642/US MIL-PRF-19500/578, MIL-PRF19500/578, jantx1n6638 JANTXV1N6638U 1N6641
2009 - 1N6641

Abstract: No abstract text available
Text: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features · Available in JAN, JANS, JANTX, JANTXV per MILPRF19500/578 & /609 · Switching Diodes · NonCavity Glass Plackage · Category I Metallurgically Bonded Maximum Ratings Operating Temperature: -65°C to +175°C Storage Temperature: Operating Current: Derating: Surge Current: -65°C to +175°C 300mA Thermal Resistance: (RJEC): U & US 40 °C/W maximum


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PDF 1N6638 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U 1N6639U 1N6640U 1N6641
VQE 13

Abstract: 1N6641 Qualification JAN1N6642 1N6643 1N6642 1N6642 JANTX 1N6640 1N6639 1N6638
Text: fabrication) * Includes JAN, JANTX, JANTXV quality levels This qualification approval is based upon test


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PDF VQE-09-017180/Mr. Carpenter/614-692-7078/kc) MIL-PRF-19500N, JAN1N6642 VQE 13 1N6641 Qualification 1N6643 1N6642 1N6642 JANTX 1N6640 1N6639 1N6638
2009 - 1N6641

Abstract: No abstract text available
Text: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features · Available in JAN, JANS, JANTX, JANTXV per MILPRF19500/578 & /609 · Switching Diodes · NonCavity Glass Plackage · Category I Metallurgically Bonded Maximum Ratings Operating Temperature: -65°C to +175°C Storage Temperature: Operating Current: Derating: Surge Current: -65°C to +175°C 300mA Thermal Resistance: (RJEC): U & US 40 °C/W maximum


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PDF 1N6638 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U 1N6639U 1N6640U 1N6641
2009 - 1N6640 equivalent

Abstract: 1N6640 1N6641
Text: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features · Available in JAN, JANS, JANTX, JANTXV per MILPRF19500/578 & /609 · Switching Diodes · NonCavity Glass Plackage · Category I Metallurgically Bonded Maximum Ratings Operating Temperature: -65°C to +175°C Storage Temperature: Operating Current: Derating: Surge Current: -65°C to +175°C 300mA Thermal Resistance: (RJEC): U & US 40 °C/W maximum


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PDF 1N6638 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U 1N6639U 1N6640U 1N6640 equivalent 1N6640 1N6641
1N6641

Abstract: No abstract text available
Text: and1N4150UR-1. i.e. Relrabifity levels This family is available from JAN, JANTX, JANTXV & JANS levels


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PDF 1N6639 1N6640 1N6641 DO-35 1N4150-1 1N4450-1. MIL-S-19500 1N6643US 1NB638US -150-C 1N6641
1N6640US

Abstract: No abstract text available
Text: 1N6639US THRU 1N6641 US AVAILABLE IN JAN, PER MIL-PRF-19500/609 SWITCHING DIODES NON-CAVITY GLASS PACKAGE METALLURGiCALLY BONDED JANTX, JANTXV AND JANS 1N6639US 1N6640US 1N6641US MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA Derating: 3.0 mA/°C Above T|_ = + 75°C @L = 3/8" Surge Current: I 2.5A, Pw = 8.3ms ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. V B R ft · 10 }JA V RWM 1 ft1 , 1m O T a = +25°C « t a = +is


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PDF 1N6639US 1N6641 MIL-PRF-19500/609 1N6640US 1N6641US IN6639US IN6641US
2004 - 1N6640 die

Abstract: 1N6642 die 1n6640 609C 1c414 1c4148 1N6638 1N6639 1N6641
Text: No file text available


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PDF 1N6638/U 1N6639/U 1N6640/U 1N6641/U 1N6642/U 1N6643/U 1N6638 1N6643 MIL-PRF-19500/578 7700-409X 1N6640 die 1N6642 die 1n6640 609C 1c414 1c4148 1N6639 1N6641
1N6641

Abstract: No abstract text available
Text: No file text available


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PDF 1N6639 1N6640 1N6641 300mAmp MIL-S-19500/609 1N4150 1N6639US 1N6640US 1N6641
glass diode marking 2U

Abstract: 37sn 1N6640US 6643U 2U 73 diode marking 2U diode 1N6641
Text: No file text available


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PDF MIL-S-19500/509 1N4150 1N6639 1N6640 1N6641 300mAmp 1N6639US 1N6640US glass diode marking 2U 37sn 6643U 2U 73 diode marking 2U diode 1N6641
1N4450

Abstract: BKC Semiconductors DSAIH0002560 1N6641
Text: No file text available


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PDF 1N4150-1 1N4450-1. 1N6639 1N6640 1N6641 DO-35 200mA 200mA 1N4450 BKC Semiconductors DSAIH0002560 1N6641
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