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Microchip Technology Inc
1N647-1JANTXV Diode Silicon Rectifier 400V 0.4A 2-Pin DO-35 Bag - Bag (Alt: JANTXV1N647-1) 1N647-1JANTXV ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 1N647-1JANTXV Bag 0 50 - - $16.27747 $15.03807 $15.03807 Buy Now
Microchip Technology Inc
1N6471JANTXV Diode TVS Single Uni-Direction 12V 1.5kW 2-Pin Case G Bag - Bag (Alt: JANTXV1N6471) 1N6471JANTXV ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 1N6471JANTXV Bag 0 107 - - - $12.1134 $11.92893 Buy Now
Semtech Corporation
1N6471JANTXV T DAP UNI 1500W 12V - Bulk (Alt: JANTXV1N6471) 1N6471JANTXV ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 1N6471JANTXV Bulk 0 250 - - - $14.98733 $14.26506 Buy Now

1N647-1+JANTXV datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
1N647-1+JANTXV 1N647-1+JANTXV ECAD Model Defense Electronics Supply Center 400mA Iout, 400V Vrrm General Purpose Silicon Rectifier Scan PDF

1N647-1+JANTXV Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DIODE 1N649

Abstract: diode 351 1N649 JANTX diode 1n645 1N647-1 JANTX equivalent 1N647-1 1N649-1 JANTX 1N649-1 1N647-1 JANTXV 1N649UR1 JAN
Text: JANTXV 1/ This specification is approved for use by all Departments and Agencies of the Department of , , 1N6662US and 1N6663US, JAN, JANTX, JANTXV , AND JANS DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - , qualification. 5 MIL-PRF-19500/240R 4.3 Screening ( JANTXV , JANTX levels only). Screening shall be in , acceptable. Measurement Screen (see table E-IV of MIL-PRF-19500) 3c JANTXV and JANTX levels , burn-in criteria (hours, bias conditions, and mounting conditions) may be used for JANTX and JANTXV


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PDF MIL-PRF-19500/240R MIL-PRF-19500/240P 1N645-1, 1N647-1, 1N649-1, 1N645UR-1, 1N647UR-1, 1N649UR-1, MIL-PRF-19500. DIODE 1N649 diode 351 1N649 JANTX diode 1n645 1N647-1 JANTX equivalent 1N647-1 1N649-1 JANTX 1N649-1 1N647-1 JANTXV 1N649UR1 JAN
DIODE 1N649

Abstract: diode 1N645 JANTX markings on diode marking 332 1N647 1N649 JANTX military part marking symbols jan 1N645-1 JANS 1N647-1 JANTX 1N647-1
Text: MIL SPECS IC|OODOiaS 0001574 4 | o/- o y NOTICE ! I OF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1 1N649-1, JAN, JANTX, JANTXV , AND JANS MIL-S , , SILICON, RECTIFIER TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1, 1N649-1, JAN, JANTX, JANTXV , shall be in accordance with MIL-S-19500. 4.3 Screening (JANS, JMTX, and JANTXV levels only). Screening


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PDF MIL-S-19500/240E 1N645, 1N647, 1N649, 1N645-1, 1N647-1 1N649-1, MIL-S-19500/240E, 1N647-1, DIODE 1N649 diode 1N645 JANTX markings on diode marking 332 1N647 1N649 JANTX military part marking symbols jan 1N645-1 JANS JANTX 1N647-1
1n647

Abstract: 1N647-1
Text: M IC R OS EN I CORP/ ÜIATERTOIÜN SÜE R F O T IF IF R Ç I).“ *" High Voltage, Low Current D m 00123S5 =1 3 ■U N I T 13 1N645, 1N647; JAN, JANTX 1N645, 1N647 JAN, JANTX & JANTXV 1N645-1, 1N647-1 . FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240 • Planar Passivated Chip • DO-35 or DO-7 Package DESCRIPTION These devices are useful in general purpose low current applications in high reliability and military equipment. ABSOLUTE MAXIMUM


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PDF 00123S5 1N645, 1N647; 1N647 1N645-1, 1N647-1 MIL-S-19500/240 DO-35 1N645-1 1n647 1N647-1
2004 - 1N647-1

Abstract: 1N647 JANTX JANTX 1N647-1
Text: FEATURES 1N647-1 · · · · · 1N647-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C Operating Current: Derating Factor: Derating Factor: 150mA, TA= +150°C 2mA/°C above +25°C


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PDF 1N647-1 1N647-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35 1N647 JANTX JANTX 1N647-1
1N647-1

Abstract: No abstract text available
Text: FEATURES 1N647- 1 • • • • • 1N647-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C Operating Current: Derating Factor: Derating Factor: 150mA, TA= +150°C


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PDF 1N647- 1N647-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35
JTX 1N649-1

Abstract: DSAIH00025213 1n646
Text: Silicon Rectifier Diodes Use Advantages Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. May be used in hostile environments where hermeticity and reliability are important i.e. (Military and Aero/Space). M IL -S -19500/ 240 approvals. Available up to JANTXV -1 level. See Bold s for Mil approved types. "S" level screening capability to Source Control


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PDF 1N645-1 1N649-1 DO-35 1N647-1 1N648 1N649-1 150mAdc, 1N645/47/49-1 -213AA JTX 1N649-1 DSAIH00025213 1n646
1N6122A JANTX

Abstract: JANTX1N5627 "general instrument 1n4946 JANTX 1N647-1 1N5416 JANTX JAN 1N5811 JANTX 1N5811 JANTX 1N4246 JANTX1N5626 1N6116A JANTX
Text: , JANTX and JANTXV rec tifiers and bridges, and see why we're The Decisive Factor in military rectifiers , performance that can not be guaranteed with standard commercial components. JANTX AND JANTXV COMPONENTS In addition to JAN processing, JANTX and JANTXV devices are subjected to extra environmental and electrical , , JANTX, JANTXV devices we produce. As the world's largest rectifier manufacturer, you can ALWAYS count on , JAN, JANTX AND JANTXV MILITARY RECTIFIERS AND BRIDGES! TECHNICAL ASSISTANCE You'll find that


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PDF 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 1N4944 1N4946 1N4947 1N4948 1N6122A JANTX JANTX1N5627 "general instrument 1n4946 JANTX 1N647-1 1N5416 JANTX JAN 1N5811 JANTX 1N5811 JANTX 1N4246 JANTX1N5626 1N6116A JANTX
DO 213 AA smd

Abstract: DFCA 1N646 BKC Semiconductors DSAIH0002551 DO213 1N647-1
Text: Silicon Rectifier Diodes Use Advantages 1 N645-I thru 1 N649-I DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. May be used in hostile environments where hermeticity and reliability are important i.e. (Military and Aerospace). M I L-S-19500/240 approvals. Available up to JANTXV -1 level. See Bold ^ for Mil approved types


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PDF N645-I N649-I DO-35 L-S-19500/240 1NI645-1 1N646 1N647-1 1N649-1 1N645/47/49-1 DO-213 DO 213 AA smd DFCA BKC Semiconductors DSAIH0002551 DO213
Not Available

Abstract: No abstract text available
Text: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. May be used in hostile environments where hermeticity and reliability are important i.e. (Military and Aero/Space). M IL -S -19500/ 240 approvals. Available up to JANTXV -1 level. See Bold * for


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PDF 1N645-1 1N649-1 DO-35 0Q0057L> 1N645-1 1N645-649
2007 - SP647

Abstract: 1N6469 1N6469US 1N6476 1N6472 SP6476
Text: , or JANTXV prefix Further options for screening in accordance with MILPRF-19500 for JANS by using a


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PDF 1N6469 1N6476 MIL-PRF19500/552 MIL-PRF-19500/552. 1N6469 SP647 1N6469US 1N6476 1N6472 SP6476
2007 - 1N6469

Abstract: 1N6469US 1N6476
Text: , or JANTXV prefix Further options for screening in accordance with MILPRF-19500 for JANS by using a


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PDF 1N6469 1N6476 MIL-PRF19500/552 MIL-PRF-19500/552. 1N6468 1N6469 1N6461 1N6469US 1N6476
2004 - 1N6476

Abstract: 1N6469 1N6469US 1N6472 1N6476AUS JANTX 1N647-1
Text: , or JANTXV prefix Further options for screening in accordance with MILPRF-19500 for JANS by using a


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PDF 1N6469 1N6476 MIL-PRF19500/552 MIL-PRF-19500/552. MN6468 1N6469 1N6461 1N6476 1N6469US 1N6472 1N6476AUS JANTX 1N647-1
1n645

Abstract: 1N647-1 1N645-1 DO7 1n647 pk1n 1N645 DO7
Text: No file text available


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PDF 1N645, 1N647; 1N647 1N645-1, 1N647-1 MIL-S-19500/240 DO-35 1N645 1N647-1 1N645-1 DO7 pk1n 1N645 DO7
2011 - Not Available

Abstract: No abstract text available
Text: 1N6476URS, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies , part number and lot date code for all levels. The prefixes JAN, JANTX, or JANTXV may be abbreviated as , Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF , MIL-PRF-19500) Measurement JANTX and JANTXV levels 9 Not applicable 11 ID and VBR 12 , within 24 hours. (1) 96 hours minimum (JANTX and JANTXV ) for the screening test. (2) 340 hours (JAN


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PDF MIL-PRF-19500/552F MIL-PRF-19500/552E 1N6469 1N6476, 1N6469US 1N6476US, 1N6469URS 1N6476URS, MIL-PRF-19500.
1N6469

Abstract: 1N6469US 1N6470 1N6476 1N6476US evii 516 diode
Text: JANTXV This specification is approved for use by all Departments and Agencies of the Department of , qualification. 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV , . Measurement Screen (see table E-IV of MIL-PRF-19500) JANTX and JANTXV levels 9 Not applicable , . End-point measurements shall be performed within 24 hours. (1) 96 hours minimum (JANTX and JANTXV ) for the screening test. (2) 340 hours (JAN, JANTX, and JANTXV ) for group B steady-state operation life test. (3) 1


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PDF MIL-PRF-19500/552E MIL-PRF-19500/552D 1N6469 1N6476, 1N6469US 1N6476US, MIL-PRF-19500. 500-watt 1N6470 1N6476 1N6476US evii 516 diode
1N6476

Abstract: 1N647-1
Text: No file text available


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PDF 1N6463 1N6468 1N6471 1N6476 1N6464 1N6465 1N6466 1N6467 1N6468 1N6476 1N647-1
1N6661US JANS

Abstract: 1N6662US 1N6662 1N6661US 1N6661 1N647-1 1N649-1 1N6663 1N6663US JANS1N645-1
Text: , JANTX, JANTXV , AND JANS JANS1N645-1, JANS 1N647-1 and JANS 1N649-1 are nonpreferred part numbers and , qualification. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with , JANTX and JANTXV levels Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 9 VF1 , ) and table E-VIb (JANTX and JANTXV ) of MIL-PRF-19500. Electrical measurements (end-points) shall be in , , table E-VIb (JAN, JANTX, and JANTXV ) of MIL-PRF-19500. Subgroup B2 Method 1056 Condition 0


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PDF MIL-PRF-19500/587C 1N6661, 1N6662, 1N6663, 1N6661US, 1N6662US, 1N6663US, JANS1N645-1, 1N647-1 1N6661US JANS 1N6662US 1N6662 1N6661US 1N6661 1N649-1 1N6663 1N6663US JANS1N645-1
IN750

Abstract: 1N239 1N47A IN4858 1N236 1N701 1N236 diode DIODE 1N649 IN4838 1N665
Text: No file text available


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PDF 1N2250) 1N226I1) 1N227 150mw 1N228C) 1N229C) 1N2301D 1N231C) 1N2320 1N233 IN750 1N239 1N47A IN4858 1N236 1N701 1N236 diode DIODE 1N649 IN4838 1N665
1N647-1

Abstract: No abstract text available
Text: No file text available


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PDF 1N647-1 Current400m Voltage400 Current200n Current20u StyleDO-35
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF QQ00303 1N645-1 1N647-1 1N649-1 400mAdc 1N645 DO-34 DO-35 DO-41 LL-41
N6491

Abstract: 1N649-1 1N645-1 1N647-1 1N645-1 JAN 1N645-1 JANS
Text: No file text available


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PDF 1N645-1 1N649-1 MIL-S-19500/Z40 N645-1 1N647-1 N649-1 400mAdc 150mAdc, 1N645-1 N6491 1N649-1 1N645-1 JAN 1N645-1 JANS
1N649-1

Abstract: 1N645-1 1N647-1 1N645-1 JAN N647
Text: No file text available


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PDF 1N645-1 1N649-1 MIL-S-19500/240D. 1N649-1 400mAdc 1N645-1 N647-1 150mAdc, 1N647-1 1N645-1 JAN N647
cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR m19500/483 1N1742A transistor 2N3251
Text: No file text available


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PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR m19500/483 1N1742A transistor 2N3251
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1N6461 1N6468 1N6469 1N6476 MIL-PRF-19500, 1N6469-1N6476
SEMTECH code date MARKING

Abstract: 1n6476 1n6473 EFT 322 1N647-1
Text: No file text available


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PDF 1N6469 1N6476 MIL-S-19500/552 1N64xx environment60 10x1000ns SEMTECH code date MARKING 1n6476 1n6473 EFT 322 1N647-1
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