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Microchip Technology Inc
1N645-1JAN Diode Silicon Rectifier 225V 0.4A 2-Pin DO-35 Bag - Bag (Alt: JAN1N645-1) 1N645-1JAN ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 1N645-1JAN Bag 0 50 - - $7.69 $7.09 $7.09 Buy Now
Microchip Technology Inc
1N645-1JANTX Diode Silicon Rectifier 225V 0.4A 2-Pin DO-35 Bag - Bag (Alt: JANTX1N645-1) 1N645-1JANTX ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 1N645-1JANTX Bag 0 50 - - $8.69 $8.09 $8.09 Buy Now
Microchip Technology Inc
1N645-1JANTXV Diode Silicon Rectifier 225V 0.4A 2-Pin DO-35 Bag - Bag (Alt: JANTXV1N645-1) 1N645-1JANTXV ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 1N645-1JANTXV Bag 0 50 - - $10.79 $9.99 $9.99 Buy Now

1N645-1+JAN datasheet (7)

Part ECAD Model Manufacturer Description Type PDF
1N645-1+JAN 1N645-1+JAN ECAD Model Defense Electronics Supply Center 400mA Iout, 225V Vrrm General Purpose Silicon Rectifier Scan PDF
1N645-1JAN 1N645-1JAN ECAD Model Unitrode International Semiconductor Data Book 1981 Scan PDF
1N645-1+JANS 1N645-1+JANS ECAD Model Defense Electronics Supply Center 400mA Iout, 225V Vrrm General Purpose Silicon Rectifier Scan PDF
1N645-1+JANTX 1N645-1+JANTX ECAD Model Defense Electronics Supply Center 400mA Iout, 225V Vrrm General Purpose Silicon Rectifier Scan PDF
1N645-1JANTX 1N645-1JANTX ECAD Model Unitrode International Semiconductor Data Book 1981 Scan PDF
1N645-1+JANTXV 1N645-1+JANTXV ECAD Model Defense Electronics Supply Center 400mA Iout, 225V Vrrm General Purpose Silicon Rectifier Scan PDF
1N645-1JANTXV 1N645-1JANTXV ECAD Model Unitrode International Semiconductor Data Book 1981 Scan PDF

1N645-1+JAN Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1n647

Abstract: 1N647-1
Text: , Low Current D m 00123S5 =1 3 ■U N I T 13 1N645, 1N647; JAN , JANTX 1N645, 1N647 JAN , RATINGS, AT 25°C 1N 645 JAN 1N 645 JAN 1N645-1 1 N 647 JAN 1N647 JAN 1N647-1 Reverse , Current @ 150°C Peak Reverse Current @25°C Average Reverse Current @ 150'C 1N645 JAN , ) JAN 1N645-1 0.050/jA @ 225Vdc 25/)Adc @ 225Vdc 50 (pk) @ 270V (pk) 100//Ade @ 225V (pk) > 1N647 JAN 1N647 0.025,uA @ 400Vdc lii/jAdc @ 400V 10 0M (pk) @ 480V (pk) 100/iAdc @


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PDF 00123S5 1N645, 1N647; 1N647 1N645-1, 1N647-1 MIL-S-19500/240 DO-35 1N645-1 1n647 1N647-1
DIODE 1N649

Abstract: diode 351 1N649 JANTX diode 1n645 1N647-1 JANTX equivalent 1N647-1 1N649-1 JANTX 1N649-1 1N647-1 JANTXV 1N649UR1 JAN
Text: , SILICON, RECTIFIER, TYPES 1N645-1, 1N647-1, 1N649-1, 1N645UR-1, 1N647UR-1, 1N649UR-1, JAN , JANTX, AND , , 1N6662US and 1N6663US, JAN , JANTX, JANTXV, AND JANS DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - , approval. 4.3.3 JAN testing. JAN level product which is either category II or III shall have temperature , specified for subgroup testing in table E-VIb ( JAN , JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein , of table III herein. 6 MIL-PRF-19500/240R 4.4.2.1 Group B inspection, table E-VIb ( JAN


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PDF MIL-PRF-19500/240R MIL-PRF-19500/240P 1N645-1, 1N647-1, 1N649-1, 1N645UR-1, 1N647UR-1, 1N649UR-1, MIL-PRF-19500. DIODE 1N649 diode 351 1N649 JANTX diode 1n645 1N647-1 JANTX equivalent 1N647-1 1N649-1 JANTX 1N649-1 1N647-1 JANTXV 1N649UR1 JAN
1n645

Abstract: 1N647-1 1N645-1 DO7 1n647 pk1n 1N645 DO7
Text: RECTIFIERS High Voltage, Low Current 1N645, 1N647; JAN , JAN TX 1N645, 1N647 JAN , JA N TX & JAN TXV 1N645-1, 1N647-1 FEATURES DESCRIPTION · · · · M etallurgical Bond Qualified to MIL-S-19500/240 Planar Passivated Chip DO-35 or DO-7 Package These devices are useful in general purpose low , °C 1N645 JAN 1N645 JAN 1N645-1 1N647 JAN 1N647 JAN 1N647-1 Reverse Breakdow n V oltag e , r = 4 V dc f = 1M H z V ,0 = 50m V 1N647 JAN 1N647 JA N 1N647-1 R e v e rse Fo rw a rd V o


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PDF 1N645, 1N647; 1N647 1N645-1, 1N647-1 MIL-S-19500/240 DO-35 1N645 1N647-1 1N645-1 DO7 pk1n 1N645 DO7
1N649-1

Abstract: 1N645-1 1N647-1 1N645-1 JAN N647
Text: CAPACITANCE (MAX.) C @ — 4V VOLTS VOLTS AMPS VOLTS pA AMPS PF 25°C 150°C 25°C 100°C JAN 1N645-1 225 270 .4 .15 1.0V .05 25 5 20 JAN 1N647-1 400 480 .4 .15 MAX. @ .05 25 5 20 JAN 1N649-1 esoo


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PDF 1N645-1 1N649-1 MIL-S-19500/240D. 1N649-1 400mAdc 1N645-1 N647-1 150mAdc, 1N647-1 1N645-1 JAN N647
DIODE 1N649

Abstract: diode 1N645 JANTX markings on diode marking 332 1N647 1N649 JANTX military part marking symbols jan 1N645-1 JANS 1N647-1 JANTX 1N647-1
Text: MIL SPECS IC|OODOiaS 0001574 4 | o/- o y NOTICE ! I OF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1 1N649-1, JAN , JANTX, JANTXV, AND JANS MIL-S , , SILICON, RECTIFIER TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1, 1N649-1, JAN , JANTX, JANTXV , ), without affecting the qualified product status of the device or applicable JAN marking. 3.3.2 Dash 1


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PDF MIL-S-19500/240E 1N645, 1N647, 1N649, 1N645-1, 1N647-1 1N649-1, MIL-S-19500/240E, 1N647-1, DIODE 1N649 diode 1N645 JANTX markings on diode marking 332 1N647 1N649 JANTX military part marking symbols jan 1N645-1 JANS JANTX 1N647-1
IN645

Abstract: 1N645-1 1N645-1 JAN JANTX 1N645-1
Text: 1N645-1 · AVAILABLE IN JAN , JANTX, AND JANTXV PER MIL-PRF-19500/240 · SILICON RECTIFIER · METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C Derating: 2.0 mA/°C From 25°C to 150°C 6.0 mA/°C From 150°C to 175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRSM V RWM I FSM TP = 1/120 s TA = 25°C VF @400mA V DC 0.8 - 1.0 V (pk) 1N645-1 V (pk


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PDF 1N645-1 MIL-PRF-19500/240 400mA IN645-1 IN645 1N645-1 1N645-1 JAN JANTX 1N645-1
2001 - IN645

Abstract: 1N645-1 1N645-1 JAN
Text: 1N645-1 · AVAILABLE IN JAN , JANTX, AND JANTXV PER MIL-PRF-19500/240 · SILICON RECTIFIER · METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 400 mA @ 25°C 150 mA @ 150°C Derating: 2.0 mA/°C From 25°C to 150°C 6.0 mA/°C From 150°C to 175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRSM V RWM I FSM TP = 1/120 s TA = 25°C VF @400mA V DC 0.8 - 1.0 V (pk) 1N645-1 V (pk


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PDF 1N645-1 MIL-PRF-19500/240 400mA IN645-1 IN645 1N645-1 1N645-1 JAN
1N645

Abstract: 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645
Text: RECTIFIERS High Voltage, Low Current JAN , JANTX 1N645 JAN , JANTX & JANTXV 1N645-1 FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/240 • Planar Passivated Chip • DO-35 or DO-7 Package • Non-JAN Available DESCRIPTION These devices are useful in general purpose low current applications in high reliability and military equipment. ABSOLUTE MAXIMUM RATINGS AT 25°C Reverse Breakdown Voltage . 270V Peak Working Voltage


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PDF 1N645 1N645-1 MIL-S-19500/240 DO-35 1N845 IN645 MIL-S-19500/240 1N645-1 1N645-1 JAN JANTX 1N645
Not Available

Abstract: No abstract text available
Text: M ierosemi Corp. f The d io a e e x p e r ts JA N 1N645-1 thru JA N 1N649-1 SC O TTSD A LE. A Z SANTA A N A, CA F o r m ore in fo rm a tio n call: (714) 9 7 9-8220 JAN S* FEA TU R ES · MICROMINIATURE PACKAGE · VOIDLESS HERMETICALLY SEALED GLASS PACKAGE · TRIPLE LAYER PASSIVATION · METALLURGICALLY BONDED · STANDARD RECOVERY · PIV TO 600 VOLTS · JANS/TX/TXV TYPES AVAILABLE PER MIL-S-19500/240 MILITARY RECTIFIERS


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PDF 1N645-1 1N649-1 MIL-S-19500/240
IN750

Abstract: 1N239 1N47A IN4858 1N236 1N701 1N236 diode DIODE 1N649 IN4838 1N665
Text: AMPS PF 25°C 150°C 25°C 100°C JAN 1N645-1 225 270 .4 .15 1.0V .05 25 5 20 JAN 1N647-1 400 480 .4 .15 MAX. @ .05 25 5 20 JAN 1N649-1 esoo 720 .4 .15 400mAdc (pulsed) .05 25 5 20 1N645-1 225


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PDF 1N2250) 1N226I1) 1N227 150mw 1N228C) 1N229C) 1N2301D 1N231C) 1N2320 1N233 IN750 1N239 1N47A IN4858 1N236 1N701 1N236 diode DIODE 1N649 IN4838 1N665
Not Available

Abstract: No abstract text available
Text: order military parts use the 1N645/47/49-1 numbers with the appropriate JAN , JTX or JTXV prefix. For


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PDF 1N645-1 1N649-1 DO-35 0Q0057L> 1N645-1 1N645-649
Not Available

Abstract: No abstract text available
Text: 1N645-1+JAN Diodes Silicon Rectifier Military/High-RelY I(O) Max.(A) Output Current400m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage225 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)400m @Temp. (øC) (Test Condition)25 I(RM) Max.(A) Reverse Current50n @V(R) (V)(Test Condition)225 I(RM) Max.(A) Pk. Rev. Current25u @Temp. (øC) (Test Condition)150’ Maximum Operating Temp (øC)150õ Package StyleDO-35 Mounting StyleT


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PDF 1N645-1 Current400m Voltage225 Current50n Current25u StyleDO-35
N6491

Abstract: 1N649-1 1N645-1 1N647-1 1N645-1 JAN 1N645-1 JANS
Text: Micro/semi Corp. SANTA ANA, CA For more information call: (714) 979-8220 ^MËSl JAN 1N645-1 thru JAN 1N649-1 FEATURES • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION • METALLURGICALLY BONDED • STANDARD RECOVERY • PIV TO 600 , VOLTS AMPS VOLTS AMPS PF 25°C 150°C 2S°C 100°C 8.3 ms JAN 1 N645-1 225 270 .4 .15 1.0V .05 25 5 20 JAN 1N647-1 400 480 .4 .15 MAX. @ .05 25 5 20 JAN 1 N649-1 600 720 .4 .15 400mAdc .05 25 5


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PDF 1N645-1 1N649-1 MIL-S-19500/Z40 N645-1 1N647-1 N649-1 400mAdc 150mAdc, 1N645-1 N6491 1N649-1 1N645-1 JAN 1N645-1 JANS
1N649-1

Abstract: No abstract text available
Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N645 THRU 1N649 JAN AND JANTX 1N645-1 THRU 1N649-1 MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE- 225 to 600 Volts .023(0.6)010. .0 1 8 (.0 5 ) 1.50 , 720 600 420 600 JAN JAN JA N JA N JA N JAN UNITS Maximum Recurrent Peak , , P.C. Board mounted. - 24 - MAXIMUM RATINGS AND CHARACTERISTIC CURVES JAN AND JANTX1N645 THRU 1N649 _ JAN AND JANTX 1N645-1 THRU 1N649-1 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK Uc n 3


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PDF 1N645 1N649 1N645-1 1N649-1 MIL-S-19500/ MIL-STD-202, JANTX1N645 1N649 1N649-1
2004 - 1N645-1

Abstract: 1N645-1 JAN 1N645-1 JANTX
Text: FEATURES 1N645-1 · · · · · 1N645-1 AVAILABLE IN JAN , JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C Operating Current: Derating Factor: Derating Factor: 150mA, TA= +150°C 2mA/°C above +25°C


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PDF 1N645-1 1N645-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35 1N645-1 JAN 1N645-1 JANTX
Not Available

Abstract: No abstract text available
Text: Microsemi Corp. y The dioi1e experts SANTA A N A , CA F o r m o re in fo rm a tio n call: (714) 979-8220 / II J A N 1N645-1 thru J A N 1N649-1 7 JA N S* FE A T U R E S · MICROMINIATURE PACKAGE · VOIDLESS HERMETICALLY SEALED GLASS PACKAGE · TRIPLE LAYER PASSIVATION · METALLURGICALLY BONDED · STANDARD RECOVERY · PIV TO 600 VOLTS · JAN S/TX/TXV TYPES AVAILABLE PER MIL-S-19500/240 MILITARY RECTIFIERS MAXIMUM RATINGS O perating Tem perature: - 65°C to + 150°C Storage Tem perature


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PDF 1N645-1 1N649-1 MIL-S-19500/240
JTX 1N649-1

Abstract: DSAIH00025213 1n646
Text: order military parts use the 1N645/47/49-1 numbers with the appropriate JAN , JTX or JTXV prefix. EHE


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PDF 1N645-1 1N649-1 DO-35 1N647-1 1N648 1N649-1 150mAdc, 1N645/47/49-1 -213AA JTX 1N649-1 DSAIH00025213 1n646
DIODE 1N649

Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Text: Level JAN , JAN TX, JAN TX V JAN , JAN TX, JAN TX V JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TX V JAN , JAN TX, JAN TX V JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TXV JAN , JAN TX, JAN TX V Q Page 32 32 32 14 14 20 11 20 21 , JAN , JA N TX , JA N TX V JAN , JA N TX , JA N TX V JAN , JAN TX, JAN TXV JAN . JAN TX, JAN TXV JAN , JAN


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PDF 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 1N759A-1 1N914 1N962B-1 1N973B-1 DIODE 1N649 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Not Available

Abstract: No abstract text available
Text: FEATURES 1N645- 1 • • • • • 1N645-1 AVAILABLE IN JAN , JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +175°C 5.0A 500mW 400mA, TA= +25°C Operating Current: Derating Factor: Derating Factor: 150mA, TA= +150°C


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PDF 1N645- 1N645-1 MIL-PRF-19500/240 500mW 400mA, 150mA, MILPRF-19500/240 DO-35
1N4868

Abstract: 1N233 zener diode 1N429 1N471 IN753 1N239 IN4858 JAN1N486B IN4868 diode 1N2320
Text: AttPS VOLTS j.A AMPS PF 25°C 150°C 25°C 150°C JAN 1N483B 70 80 2 .05 1.0V (pk) .025 5 2 8 JAN 1N485B 180 200 .2 .05 @ .025 5 2 8 JAN 1N486B 225 250 .2 .05 100mA Dulse .025 5 2 8 JAN 1N5194 SAME AS JAN 1N483B1 JAN 1N5195 JAN 1N5196 SAME AS JAN 1N485B }• EXCEPT: PACKAGE D035 SAME AS AN 1N486B J PACKAGE: D07 for JAN 1N483B, 485B, 486B. D035 for JAM 1N5194, JAN 1N5195, and JAN 1N5196. NOTE 1: l0 = 200m Adc 10 - 8.3msec surges ) MIN ¡J f-A T MAX. CIA. (2-621 MA


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PDF 1N2250) 1N226I1) 1N227 150mw 1N228C) 1N229C) 1N2301D 1N231C) 1N2320 1N233 1N4868 1N233 zener diode 1N429 1N471 IN753 1N239 IN4858 JAN1N486B IN4868 diode
C 6073

Abstract: No abstract text available
Text: GUIDE TO METALLURGICALLY-BONDED AXIAL LEAD DIODES JAN JTX-JTXV TYPES M ilita ry s p e c if ic a t io n s re q u ire th a t a ll d e v ic e s s h o w n h ere be m e ta llu r g ic a lly b o n d e d , n ot ju s t " - I " p a rts a s is g e n e ra lly b e lie v e d . A ll d e v ic e s lis t e d on th is c h a rt a re m a n u fa c tu re d by M ic r o s e m i C o rp o ra tio n w ith th e s a m e h a rd g la s s v o id le s s m e ta llu r g ic a l c o n s tru c tio n s . POWER RATING - Zeners in


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PDF 250mW 400/500mW 59A-1 962B-1 973B-1 4460L 1N5194-6 1N645-1 1N649-1 1N4938-1 C 6073
1999 - 1N649

Abstract: 1N645 1N645-1 1N646 1N647 1N648 1N649-1 DO-213AA
Text: No file text available


Original
PDF DO-35 1N645 1N645-1 1N645-1 1N649-1 1N649 1N646 1N647 1N648 1N649-1 DO-213AA
1N6122A JANTX

Abstract: JANTX1N5627 "general instrument 1n4946 JANTX 1N647-1 1N5416 JANTX JAN 1N5811 JANTX 1N5811 JANTX 1N4246 JANTX1N5626 1N6116A JANTX
Text: and service. And no one beats our delivery. Think bigger and better. Design-in General Instrument JAN , . _ JAN COMPONENTS The most economical Hi-Rel device, JAN components are MIL qualified and subjected to environmental and life sample tests to assure quality conformance. JAN devices are 100 % tested , addition to JAN processing, JANTX and JANTXV devices are subjected to extra environmental and electrical , aspects of a purchasing agent's many responsibilities. We remove that stumbling block for all the JAN


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PDF 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 1N4944 1N4946 1N4947 1N4948 1N6122A JANTX JANTX1N5627 "general instrument 1n4946 JANTX 1N647-1 1N5416 JANTX JAN 1N5811 JANTX 1N5811 JANTX 1N4246 JANTX1N5626 1N6116A JANTX
1999 - DO-35 silicon Rectifier diodes

Abstract: 1N649-1 Purpose Rectifier Melf 1N646 1N645-1 1N645 DO-213AA 1N649 1N648 1N647
Text: No file text available


Original
PDF DO-35 1N645 1N645-1 1N645-1 1N649-1 DO-35 silicon Rectifier diodes 1N649-1 Purpose Rectifier Melf 1N646 DO-213AA 1N649 1N648 1N647
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1N645-1 500mW 400mA, 150mA, DO-35
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