The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
1N6122A Microsemi Corporation Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2
1N6120AUS Microsemi Corporation Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5B, E-MELF-2
1N6125A Microsemi Corporation Trans Voltage Suppressor Diode, 500W, 47.1V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2
1N6124AUS Microsemi Corporation Trans Voltage Suppressor Diode, 500W, 42.6V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5B, E-MELF-2
1N6127A Microsemi Corporation Trans Voltage Suppressor Diode, 500W, 56V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, B PACKAGE-2
1N6125AUS Microsemi Corporation Trans Voltage Suppressor Diode, 500W, 47.1V V(RWM), Bidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, D-5B, E-MELF-2

1N612/A datasheet (6)

Part Manufacturer Description Type PDF
1N612A Motorola Motorola Semiconductor Datasheet Library Scan PDF
1N612A Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
1N612A Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N612A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1N612A Others Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
1N612A Semicon Components 800mA Iout, 400V Vrrm General Purpose Silicon Rectifier Scan PDF

1N612/A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N33A

Abstract: 1n250 diode 1N34* diode diode 1n34 1N254 "general diode corporation" 1N255 1n607a 1N348 1N248
Text: D T'OI"/f at dF| 301^750 0000325 0 j" I I" à ¶ o 1 O- 1N248 DO-5 50 10 @ 150 1.5 @ 25 1N248A , -4 300 0.2 @ 150 2  © 0.4 1N336 Po-4 200 0.4 @ 150 2 @ 0.8 1N337 Do-4 200 0.2 @ 150 ⠖ 2 @ à “.4 1N33à , 1N347 Do-4 100 1 @ 150 . 2@2 ÍN34Í Do-4 100 0.4 @ 150 2  ©0.8 1N349 Do-4 100 0.2 @ 150 2 @ 0.4 , 1.5 @ 0.4 1NG1Í A Do-4 300 0.8 @ 100 1.5 @ 0.2 1N612 Do-4. . 400 0.8 @ 100 1.5 @ 0.4 1N612A Do-4 . , @ 0.6 1N1119 Do-4 200 0.6 @ 150 0.65 @ 0.6 1N1117 Do-4 300 0.6 @ 150 0.65 @ 0.6 à – 5 @ 150 S @


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PDF 1N248 1N248A, 1N249 1N249A, 1N250 1N250A, 1N253 1N254 1N255 1N25S 1N33A 1n250 diode 1N34* diode diode 1n34 "general diode corporation" 1n607a 1N348
2010 - jan1n12

Abstract: 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
Text: 1N1201, R USAF1N1201 1N1201A, RA 1N1202, R. USAF1N1202 JAN1N1202, R JANTX1 N1202A, RA A 150°C to.8 to , 1N1347B, RB 1N1348, R 1N1348A, RA A 150°C 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 6 6 6 6 6


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PDF 1N607, 1N607A, 1N608, 1N608A, 1N609, 1N609A, 1N612, 1N612A, 1N613, 1N613A, jan1n12 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
1N255

Abstract: 1N347 1N550 1N614 1N562 1N256 1N333 1N348 1N254 1N253
Text: BASE (DO-4 & DO-5) iQ RATING TO 60 AMPS FEATURES: ⠀¢ Hermetic Seal ⠀¢ High Temperature Operation ⠀¢ Metallurgical^ Bonded DESCRIPTION This is a series of general purpose rectifiers with average , rectification applications. ABSOLUTE MAXIMUM RATINGS: ⠀¢ Storage and Operating Temp. -656Cto 175°C MAXIMUM , amperes amps ma ratio 1N253 100 1.5 135 1.0 1.0@135°C 10 135 N/ A 20 1N254 200 1.5 135 1.0 1.0@135°C 10 135 N/ A 20 1N255 400 1.5 135 1.0 1.0@135°C 10 135 N/ A 20 1N256 600 2.0 135 1.0 1.0@135°C 10


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PDF -656Cto 1N253 1N254 1N255 1N607A 1N608 1N608A 1N609 1N609A 1N610 1N255 1N347 1N550 1N614 1N562 1N256 1N333 1N348
Not Available

Abstract: No abstract text available
Text: 1N612A Diodes Silicon Rectifier Military/High-RelN I(O) Max.( A ) Output Current800m @Temp (øC) (Test Condition)100’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.( A ) Pk.Fwd.Sur.Cur.3.0 V(FM) Max.(V) Forward Voltage1.5 @I(FM) ( A ) (Test Condition).40 @Temp. (øC) (Test Condition)25’ I(RM) Max.( A ) Reverse Current1.5u @V(R) (V)(Test Condition)400 I(RM) Max.( A ) Pk. Rev. Current @Temp. (øC) (Test Condition) Maximum Operating Temp (øC)150’ Package StyleDO-4 Mounting StyleT Description


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PDF 1N612A Current800m Voltage400
1N1115

Abstract: 1N255 MR1121 1N1118 1N254 1N1540 1N1116 MR1120R 1N1117 1N611
Text: (non-repetltlve, 1msec A (rms)2a Maximum Junction Operating and Storage Temperature , CURRENT (AMP) FORWARD POWER DISSIPATION MAXIMUM ALLOWABLE SURGE CURRENT IV 250  £ I i 200 OS ce 3  £ fi 150 9. S 100 S \ SURGE APPLIED AT RATED LOAD CONDITIONS; Vrm (r«p) APPLIED AFTER SURGE  ® 150°C 8 12 16 20 24 'F(avj. AVERAGE FORWARD CURRENT (AMP) 2 5 10 20 50 100 200 500 , series (types MR1120 -MR1130) provides a high performance, economical solution to your specification and


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PDF MR1128 MR1130 Curre41A 1N349 1N551 1N611 1N553 1N1127A 1N1128 1N3671A 1N1115 1N255 MR1121 1N1118 1N254 1N1540 1N1116 MR1120R 1N1117
Not Available

Abstract: No abstract text available
Text: 1N612 Diodes Silicon Rectifier Military/High-RelN I(O) Max.( A ) Output Current800m @Temp (øC) (Test Condition)100’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.( A ) Pk.Fwd.Sur.Cur.3.0 V(FM) Max.(V) Forward Voltage1.5 @I(FM) ( A ) (Test Condition).20 @Temp. (øC) (Test Condition)25’ I(RM) Max.( A ) Reverse Current25u @V(R) (V)(Test Condition)400 I(RM) Max.( A ) Pk. Rev. Current @Temp. (øC) (Test Condition) Maximum Operating Temp (øC)150’ Package StyleDO-4 Mounting StyleT Description


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PDF 1N612 Current800m Voltage400 Current25u
1N6133

Abstract: spb25 jan 1N6113US 1N4245 JTX 1N6650-1 mil-prf-19500/1N5553US
Text: MIL-PRF-19500 QUALIFIED PRODUCTS LIST (In Development) Part Number 1N6102/ A *1N6102US/ A *1N6103/ A *1N6103US/ A *1N6104/ A *1N6104US/ A *1N6105/ A *1N6105US/ A *1N6106 / A *1N6106US/ A 1N6107/ A *1N6107US/ A *1N6108 / A *1N6108US/ A *1N6109 / A *1N6109US / A *1N6110 / A *1N6110US / A *1N6111/ A *1N611US/ A *1N611 2 / A *1N6112US/ A *1N611 3 / A *1N6113US/ A *1N6114/ A *1N6114US/ A *1N6115/ A *1N6115US/ A *1N6116 / A *1N6116US/ A *1N6117 / A *1N6117US / A *1N6118 / A *1N6118US / A *1N611 9 / A


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PDF MIL-PRF-19500 1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 1N6133 spb25 jan 1N6113US 1N4245 JTX 1N6650-1 mil-prf-19500/1N5553US
Not Available

Abstract: No abstract text available
Text: : DESCRIPTION ⠀¢ Hermetic Seal This is a series of general purpose rectifiers with average forward , applications. ⠀¢ High Temperature Operation ⠀¢ Metallurgical^ Bonded ABSOLUTE MAXIMUM RATINGS: â , 1N609 1N609A TEM P “C RR nS RATIO ' fsm AMPS 135 135 135 135 150 N/ A N/ A N/ A N/ A N/ A 20 20 20 20 20 200 200 200 100 100 150 150 150 150 150 N/ A N/ A N/ A N/ A N/ A 20 20 20 20 20 1.@150°C 1.@150°C .2@150°C ,4@150°C .2@150°C


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PDF 1N253 1N254 1N255 1N256 1N332 1N333 1N334 1N335 1N336 1N337
1N3610

Abstract: 1N1118 1N1120 1N39 1N1502 1N2222 HA 12058 1N1119 1N1227 1N12068
Text: STANDARD RECOVERY RECTIFIERS STUD BASE (DO-4 & DO-5) lQ RATING TO 60 AMPS DESCRIPTION This is a , 1.5 1.5 1.5 1.5 1.8 1.8 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 T EM P C U RREN T A M P ER E S , 25 'o A M PS 1.0@135°C 1.0@135°C 1.0@135°C 1 0@135°C 'r h A 10 10 10 10 200 200 200 200 100 , 1.0 25 1.0 25 1.0 25 1.5 TEM P RR RATIO ' fs m A M PS 20 20 20 20 20 20 20 20 20 20 20 20 20 20 , 25 25 25 25 25 25 25 25 25 25 25 25 25 nS N/ A N/ A N/ A N/ A N/ A N/ A N/ A N/ A N/ A N/ A N/ A N/ A N/ A N/ A


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PDF 1N253 1N254 1N255 1N256 1N332 1N333 1N334 1N335 1N336 1N337 1N3610 1N1118 1N1120 1N39 1N1502 1N2222 HA 12058 1N1119 1N1227 1N12068
MOTOROLA POWER TRANSISTOR

Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 2N1358 JAN 2N398A 1N2621A
Text: march "" ⠀” Restricted WPS burner* Cor 0(C _ A REPORT ON MOTOROLA SEMICONDUCTOR RELIABILITY During , assurance of reliability . as well as a reliable product. Among the specific achievements were the following: LOT ACCEPTANCE ⠀” More than 20,000,000 device hours of life testing under accelerated life test conditions (high temperature, operation at maximum rated conditions) were accumulated on standard devices â , "non-standard" devices. TEMPERATURE VS FAILURE RATE ⠀” Three special programs were made to study the effect of


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10191RA

Abstract: 1N1373R 1N1059 1N1052 1N600 ZENER 18-2 5t 1n1042 1N1065 1n1146 1N1695
Text: 30P1 40PJ 1N1157 1N1158 1 N 1 159 1N 1160 5RAN * 10R A N * 20RAN * 30R A N * 1N1058 IN , 1N1162 1N1163 1N1164 5SAN * 10S A N * 20SAN * 30SAN * 1N1165 1N1166 1N1167 1N 1168 5VAN * 10V AN* 20VAN * 30V A N * IN 1064 1N1065 1N1066 1N1067 IN 1068 1N1069 5P3 * 10P 3* 15P , 1N1075 5P4 10P4 15P4 20P4 30P4 40P4 IN 1171 1N 11 72 1N1173 1N1174 5 RAP * 10R A P * 2 0R A P * 30R A P * 1N1175 1N 1176 IN 1177 IN 1178 5SAP * 10SAP* 20SAP * 30S A P


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PDF 1N248 1N248A 1N248B 1N248C 1N249 1N249A 1N249B 1N249C 1N250 1N250A 10191RA 1N1373R 1N1059 1N1052 1N600 ZENER 18-2 5t 1n1042 1N1065 1n1146 1N1695
BA100 diode

Abstract: BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
Text: 1N4001 1N4002 OA70 A A 119-123-143, OA70-79-172, RL41G, SD60, 1N60. AA111-116-119-121-123-143, OA70-90, SD60, 1N60. A A 119-123-143, OA81-90-174, GA200-203, SD60, 1N60, 2NN41. AA116-119-121-123-137-143, OA70 , -119-121-123-137-143, GA10G, OA70-85-90-95, RL44g, SQ60, SFD112, 1N60. AA118-144, A AY 28, GA104, OA81-85-91-95-150, SD38 , -116-119-121-123-143, AAY27, GA105, OA70-90-159, SD60, SFD112, 1N60. A A 1 16-143, OA70-90-91-95-160, SD60, SFD107, GA105, 1N60. AA139 A A I 40 M 142 AA143 AA144 AA200 AA215 AA218 AA300 AA400 AA500 AA600 AA800 A A I 000 AAY11


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PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
Text: A23 A100 A300 A400 A500 A600 A800 A1000 AA50 AA100 AA110 AA111 AA112 AA113 AA114 AA115 AA116 ⠀¢ AA117 , A A 119-123-143, OA70-79-172, RL41G, SD60, 1N60. A A 111-116-119-121-123-143, OA70-90, SD60, ,1N60. A A 1 19-123-143, OA81-90-174, GA200-203, SD60, 1N60, 2NN41. AA116-119-121-123-137-143, OA70-90, SD60, SFD104, 1N60. A A 119-123-143, SD60, 1N60. A A 112-121-123-143, GA201, OA70-90, SD60, SFD104 , -85-91-95-f61, SD38, SFD108, 1N38-55-618, 1S33, GA104-204. A A 1 13-123-143, GA101-202, OA79-172, SD60, 1N60-541-542


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PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
2010 - IN2222A

Abstract: sv4091 IN536 3N68 IN4868 diode IN443 1n9448 transitron catalog TM106 TCR43
Text: advanced stateof-the-art products with reliability as a primary objective. By constantly meeting the , the industry as a leader in quality and design reliability. Through recent acquisitions, the Company , Power . Glass Rectifiers . Stud Mounted Power .  · 42 47 . 49 SILICON VOLTAGE VARIABLE , TRANSWITCHES  · 58 LIGHT ACTIVATED THYRISTORS (SCR'S) . 59 THYRISTORS (SCR'S) Lead Mounted 7/16" Stud Mounted 9/16" Stud Mounted Flange Mounted  · 60  · 63 64  · 65 REFERENCE AMPLIFIERS .  · 65


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TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BT13G BSTC1026
Text: 86 N AMER PHILIPS/DISCRETE BSE D ⠖ bbS3131 aOlbSbH 4 ⠖ T-Ol-oX General Information CROSS , Its Respective Manufacturer N AMER PHIL IPS/DISCRET E 2 SE D ⠖ kbS3^31 QDlbSbS h ⠖ General , INDUSTRY PART NUMBER NEAREST EQUIV. PG. Na SMDEQUnb s- ^ ⠖ ⠖ -'.- - ⠀” SMD PKG. fc—:■■hS 1N450 , 1N601A 1N5059 22 1N696 1N4148 10 PMLL4148 SOD-8O 67 ⠀¢ consult Factory . continued PHILIPS COMPONENTS Discrete Products Division ⠀¢ Discrete Semiconductor Group, 45 George Washington Highway


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PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BT13G BSTC1026
hep 154 silicon diode

Abstract: zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a , ; HobbyistExperimenter and Replacement (which includes the ⠀œ Equal-or-Better” series numbered 600 and higher.) IMPORTANT TIPS On Using Semiconductors ⠀œ EQUAL-OR-BETTER” SERIES ⠀” These devices have been very , safely ⠀œ design” his own circuits and realize the maximum device capabilities. For the Pro , its published specifications, however, due to the very nature of the term ⠀œ universal” there are


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PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
IN3492

Abstract: 1NA4 sg 4001 diode diode 1n6 1469r iN3495 0a202 diode 1n67a 1N20b 35C10
Text: NIAX VAX U E S 0 2 5 Â ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 , 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 , G RF OA71 90 .1 5 A . 1 250 G GP OA73 AO .1 5 1 .0 1 .2 * G GP 0A79 45 0 . 1 A . 0 350 G GP 0A81 115 .1 5 3 .3 275 G GP 0A85 115 , GP DA200 50 .2 5 l A 0 .1 S 0A202 150 .2 5 1 .2 0 .1 S G SW


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PDF 3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 1NA4 sg 4001 diode diode 1n6 1469r iN3495 0a202 diode 1n67a 1N20b 35C10
st178

Abstract: CK705 diode E1110 ME1120 TE1088 ecg semiconductor replacement guide CS1237 1N733A 1N942 Delco DTG-110B transistor
Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The , specifications and outline drawings of these ECG products as well as a replacement section which cross , a solid state repair kit, the ECG303, containing the most recent replacement guide and the most commonly used sem iconductors from the line-packaged small enough to fit into a tube caddy and replacing , if mounting space is a problem. Replacement in untuned stages can generally be made with a minimum


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PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 CK705 diode E1110 ME1120 TE1088 ecg semiconductor replacement guide CS1237 1N733A 1N942 Delco DTG-110B transistor
RCA SK CROSS-REFERENCE

Abstract: CD4003 pa189 250PA120 pt 3570 trw rf 2N3017 TF408 2N2505 1N4465 FAIRCHILD TTL DATA BOOK 1969
Text: 1969 o < 00 x ic e uo ⠀” 4 rO O CM u J 'r < o o o CO r , give m axim um efficiency: tungsten carbide capillary tip , heated shank and power supply th a t , 'R E E S Tempress I industries, Inc., 9 8 0 U niversityAve., Los Gatos, C a li f . 9 5 0 3 0 , a low frequency scope for your dc to 500 kHz measurements. And, only variable persistence gives , storage CRTs have a life expectancy comparable to HP conventional CRTs. The new HP 1201A (cabinet) and


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NIKKO NR 9600

Abstract: Triac bt 808 600cw GDS C25/0 sony KSM 213 DCP BYX36 NEC 10F triac SEMICON INDEXES BT135 gi 934 diod 2U12
Text:  SEMiCON INDEX O' i i< I  § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , INTEGRATED CIRCUITS - Edition 1 5 Soft bound - ISBN 0 904944 83 2 Copyright  © Semicon Indexes 1997: no , presented as a careful summary of data on semiconductors, but with no warranty of its accuracy or of its , rights Where a company or product logo or mark is shown, this is shown merely as an aid to the identification of a semiconductor device, and without bias or gain. Semicon Indexes gratefully acknowledges the


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Tr431

Abstract: B1274 transistor BSF17 18DB6A 1N1525 dd04 cs1256hg 2N113 1N34A MP 18db2a
Text: I©RJ 1 international, rectifier IR R e p la c e  ­ m ent P a rt No. 25710 25T12  « S ? S H fcx S yty P a rt No. IR R e p la c e  ­ m ent Z1012 Z1014 21016 Z1018 21020 , 4T56 .4T68 m 2 A l l 0D ^ 2 0 .,.,; 2*006 21008 21010 21012 21014 AA500 AA600 , Z1022 Z*QQ8 ACR810-102 ACR8T0-t03 ACR810-104 ACR810-105 ACR810-106 ZT010 ⠀™ > ⠖ TR-21 (c s m o n i (CS12848I (CS1340F) fC S90lll| /CS9013HH) P a rt No. IN34A IN34A JN34A TR


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PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 B1274 transistor BSF17 18DB6A 1N1525 dd04 cs1256hg 2N113 1N34A MP 18db2a
2n7588

Abstract: BC233A P3139 GEX36/7 sprague 40d TC236 C12712 GP149 931 c66 BF1950
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE , . 7—46 GUIDELINES FOR REPLACING SEMICONDUCTORS ⠀¢ It is vital that all semiconductors be operated within their voltage and current ranges to prevent premature device or circuit damage. ⠀¢ Whenever removing or installing a semiconductor device, be sure that all power sources are turned OFF, or are disconnected. ⠀¢ Carefully examine the lead configuration and polarity of the device being re­ placed and


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20680 JRC

Abstract: Germanium Diode aa116 110B6 Germanium itt Elmwood Sensors 2450 Thermal Switch 189-17-F170 1N4465 BA100 diode 1N21 MD1010 Marconi 2026 service manual
Text: TABLE OF CONTENTS Effective April ⠀” September 1966 T E C H N I C A L D A T A S , 449-454 455-459 460-461 462-534 535-548 549-563 564-614 615-739 740-745 746-765 766-767 â , INDEX FOLLOWING TYPE NO. A ) Indicators of separate manufacturers producing same type number , S35 A TSC Description Diode -160 PIV Rectifier - 200 PIV Rectifier - 450 PIV PRECEDING MANUFACTURER ciooTI A ⠀” Registered with JEDEC by this manufacturer  § - Reregistered with JEDEC by this


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MC2259

Abstract: MC9713P MC880P mc2257 MC9718P 1N4465 MC9802P 1N4003 germanium diode specification 3N214 2N1256 S P
Text: . Series A  © MOTOROLA INC., 1974 " A ll Rights Reserved" B e a m - F i r e d , B E T , C H A I N M A K E R , C . Q . , D e k a - P a k , D e s ig n e r 's , E c o n o c a p , E p ib a s e , E p ic a p , E X b u g , E X O R c i s e r , G l a s s i v a te d , H A N D Y L a b  ® , H E P  ® , L o c a L o g i c , I s o t h e r m a l , L im e lig h t, M c M O S , M eg - A -L ife II, M D T L , M E C L , M E C L 10,000, M E C L III, M H T L , M ic ro -T , M I D A , M in io d e , M in i-T , M L E D , M M O


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transistor c2060

Abstract: IN939 1N4465 Germanium itt 3N58 C1906 transistor Transistor Shortform Datasheet & Cross References 2n3986 equivalent transistor C943 transistor MSS1000 diode
Text: applications. See selector-guide index on page 201. ⠀¢ COMPLETE DATA SHEETS IN . . . DEVICE , CIRCUITS Condensed catalog with major specifications of a wide range of integrated circuits, including , their merits for a particular application, engineers often lim it their designs to a few well-known device types ⠀” despite the fact that newer or more suitable devices may be available. This book , as a broad line of devices with special inhouse type numbers. (It provides complete data-sheet


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PDF AN-134 transistor c2060 IN939 1N4465 Germanium itt 3N58 C1906 transistor Transistor Shortform Datasheet & Cross References 2n3986 equivalent transistor C943 transistor MSS1000 diode
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