The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
1N5817-B Diodes Incorporated Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5817-TP Micro Commercial Components Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5817-T Diodes Incorporated Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5817-E3/54 Vishay Semiconductors Diode Schottky 20V 1A 2-Pin DO-204AL T/R
1N5817 BK Central Semiconductor Corp DIODE SCHOTTKY 20V 1A DO41
1N5817-E3/73 Vishay Semiconductors Diode Schottky 20V 1A 2-Pin DO-204AL Ammo
SF Impression Pixel

Search Stock (141)

  You can filter table by choosing multiple options from dropdownShowing 83 results of 141
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1N 5817C Chip One Exchange 220 - -
1N5817 Fairchild Semiconductor Corporation Bristol Electronics 90 - -
1N5817 ON Semiconductor Chip1Stop 25,000 $0.07 $0.06
1N5817 Fairchild Semiconductor Corporation New Advantage Corporation 26,000 $0.55 $0.50
1N5817 NTE Electronics Inc Newark element14 228 $0.40 $0.31
1N5817 ON Semiconductor Newark element14 10,000 $0.07 $0.06
1N5817 ON Semiconductor Newark element14 4,308 $0.48 $0.10
1N5817 STMicroelectronics Newark element14 2,675 $0.40 $0.10
1N5817 STMicroelectronics Newark element14 1,888 $0.43 $0.10
1N5817 Motorola Semiconductor Products New Advantage Corporation 2,652 - -
1N5817 SynSemi Inc Master Electronics 5,042 $0.29 $0.09
1N5817 Taiwan Semiconductor Master Electronics 13,525 $0.13 $0.03
1N5817 STMicroelectronics Future Electronics - $0.05 $0.05
1N5817 ON Semiconductor Future Electronics 7,500 $0.28 $0.17
1N5817 ON Semiconductor Future Electronics - $0.15 $0.15
1N5817 STMicroelectronics Chip1Stop 54,000 $0.04 $0.04
1N5817 Fairchild Semiconductor Corporation Rochester Electronics 19,371 $0.11 $0.09
1N5817 ON Semiconductor Rochester Electronics 500 $0.11 $0.09
1N5817 Taitron Components Inc Master Electronics 2,267 $0.74 $0.10
1N5817 STMicroelectronics Farnell element14 11,780 £0.24 £0.08
1N5817 ON Semiconductor Farnell element14 2,531 £0.27 £0.09
1N5817 Taiwan Semiconductor Farnell element14 3,629 £0.31 £0.09
1N5817 STMicroelectronics Chip1Stop 10,000 $0.08 $0.07
1N5817 SPC Multicomp Farnell element14 - £0.27 £0.08
1N5817 ON Semiconductor Bristol Electronics 50 - -
1N5817 STMicroelectronics Avnet 60,000 €0.06 €0.03
1N5817 Unknown Bristol Electronics 3,141 - -
1N5817 Vishay Semiconductors Bristol Electronics 3,521 - -
1N5817 General Instrument Bristol Electronics 150 - -
1N5817 Motorola Semiconductor Products Bristol Electronics 40,853 $0.19 $0.03
1N5817 ON Semiconductor RS Components 1,300 £0.09 £0.05
1N5817 ON Semiconductor RS Components 5,200 £0.10 £0.05
1N5817 ON Semiconductor Avnet 55,000 €0.09 €0.05
1N5817 STMicroelectronics element14 Asia-Pacific 3,946 $0.49 $0.07
1N5817 ON Semiconductor element14 Asia-Pacific 147 $0.59 $0.07
1N5817 ON Semiconductor Chip1Stop 13,007 $0.23 $0.11
1N5817 DC Components Co Ltd TME Electronic Components 19,160 $0.08 $0.01
1N5817 Diotec Semiconductor AG TME Electronic Components 1,950 $0.06 $0.03
1N5817 Motorola Semiconductor Products ComS.I.T. 6,540 - -
1N5817 SPC Multicomp element14 Asia-Pacific 401 $0.14 $0.06
1N5817 STMicroelectronics Chip One Exchange 1,200 - -
1N5817 ON Semiconductor Chip One Exchange 3,952 - -
1N5817 Chip One Exchange 6,478 - -
1N5817 Taiwan Semiconductor element14 Asia-Pacific 4,122 $0.21 $0.05
1N5817 STMicroelectronics Avnet 8,000 $0.08 $0.06
1N5817 Suzhou Good-Ark Electronics Co Ltd Chip1Stop 2,675 $0.12 $0.12
1N5817 ON Semiconductor Chip1Stop 245 $1.42 $0.12
1N5817 R0 Taiwan Semiconductor RS Components 1,600 £0.09 £0.05
1N5817-B Rectron Semiconductor America II Electronics 47,000 - -
1N5817-B Diodes Incorporated Avnet 6,439 $0.43 $0.16
1N5817-BP Micro Commercial Components Future Electronics - $0.06 $0.04
1N5817-E3/54 Vishay Intertechnologies RS Components 3,050 £0.09 £0.07
1N5817-E3/54 Vishay Intertechnologies Farnell element14 11,258 £0.48 £0.11
1N5817-E3/54 Vishay Intertechnologies Newark element14 11,000 $0.09 $0.09
1N5817-E3/54 Vishay Intertechnologies Future Electronics 5,500 $0.06 $0.06
1N5817-E3/54 Vishay Intertechnologies Future Electronics 4,734 $0.12 $0.06
1N5817-E3/54 Vishay Semiconductors Allied Electronics & Automation 22,827 $0.10 $0.08
1N5817-E3/54 Vishay Semiconductors New Advantage Corporation 14,788 $0.25 $0.22
1N5817-E3/54 Vishay Intertechnologies element14 Asia-Pacific 11,000 $0.33 $0.33
1N5817-E3/54 Vishay Intertechnologies element14 Asia-Pacific 13,523 $0.50 $0.17
1N5817-E3/73 Vishay Semiconductors America II Electronics 1,918 - -
1N5817-T Diodes Incorporated New Advantage Corporation 50,000 $0.22 $0.20
1N5817-T Zetex / Diodes Inc RS Components 300 £0.14 £0.07
1N5817-T Zetex / Diodes Inc RS Components 4,500 £0.12 £0.07
1N5817-T Diodes Incorporated Avnet 2,530 $0.23 $0.08
1N5817-T Rectron Semiconductor America II Electronics 15,000 - -
1N5817-TP Microchip Technology Inc Chip One Exchange 3,526 - -
1N5817-TP MICRO COMMERCIAL COMPONENTS New Advantage Corporation 15,000 $0.10 $0.09
1N5817-TR Taitron Components Inc Master Electronics 3,500 $1.05 $0.25
1N5817.. STMicroelectronics Farnell element14 980 £0.21 £0.06
1N5817/4 Vishay Semiconductors America II Electronics 18,808 - -
1N5817E354 GS Battery ComS.I.T. 1,070 - -
1N5817G ON Semiconductor Rochester Electronics 51,306 $0.13 $0.10
1N5817G ON Semiconductor Allied Electronics & Automation - $0.13 $0.12
1N5817G ON Semiconductor Avnet 2,962 $0.43 $0.06
1N5817G ON Semiconductor America II Electronics 4,450 - -
1N5817M Diodes Incorporated New Advantage Corporation 32 - -
1N5817RL Motorola Semiconductor Products Chip One Exchange 14,000 - -
1N5817RLG ON Semiconductor Rochester Electronics 237,207 $0.13 $0.10
1N5817RLG ON Semiconductor Allied Electronics & Automation - $0.20 $0.19
NRVB1N5817G ON Semiconductor Rochester Electronics 19,000 - -
NRVB1N5817RLG ON Semiconductor Rochester Electronics 20,000 - -
VS-1N5817 HVCA & CKE Allied Electronics & Automation 1,982 $0.10 $0.06

No Results Found

Show More

1N5817 datasheet (124)

Part Manufacturer Description Type PDF
1N5817 Bytes 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
1N5817 Comchip Technology 1N5817 Original PDF
1N5817 Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts Original PDF
1N5817 DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original PDF
1N5817 Diodes 1.0A SCHOTTKY BARRIER RECTIFIER Original PDF
1N5817 Diodes 1N5817 DIODE SCHOTTKY 20V 1A DO-41 Original PDF
1N5817 Diodes Short Form Selection Guide Original PDF
1N5817 Diotec Diode, 1A, 20V, Schottky Barrier Rectifier Original PDF
1N5817 Diotec Si-Schottky-Rectifiers Original PDF
1N5817 EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original PDF
1N5817 Fagor 20 V, 1A schottky barrier rectifier Original PDF
1N5817 Fairchild Semiconductor Schottky Rectifiers Original PDF
1N5817 Fairchild Semiconductor 1.0 Ampere Schottky Barrier Rectifiers Original PDF
1N5817 Fairchild Semiconductor Schottky Barrier Rectifier Original PDF
1N5817 FCI Diode, 1A, 20V, Schottky Barrier Diode Original PDF
1N5817 Formosa 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
1N5817 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original PDF
1N5817 General Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
1N5817 Good-Ark SCHOTTKY BARRIER RECTIFIER Original PDF
1N5817 HY Electronic SCHOTTKY BARRIER RECTIFIERS Original PDF
Previous1 2 3 ... 5 6 7 Next

1N5817 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N5819

Abstract: 1N5817 N5819 1N5818 1n5819 philips 1N5817 Philips PHILIPS 1N 1.1N5819 N5818 1N5817/1N5818/1N5819
Text: stS/KM Pf(av) (W) 1.5 2 IF(AV) W Fig.4 1N5817. Maximum values steady state forward power , N AMER PHILIPS/DISCRETE b«=JE > m bhS3m DD2bTBM T37 ■APX 1N5817 /1N5818/1N5819 Schottky , PARAMETER TYPE MAX. UNIT Vrrm repetitive peak reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrwm crest working reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V Vr continuous reverse voltage 1N5817 20 V 1N5818 30 V 1N5819 40 V vrsm non-repetitive peak reverse voltage 1N5817 24 V


OCR Scan
PDF 1N5817/1N5818/1N5819 1N5817 1N5818 1N5819 N5819 1n5819 philips 1N5817 Philips PHILIPS 1N 1.1N5819 N5818 1N5817/1N5818/1N5819
Not Available

Abstract: No abstract text available
Text: 2 > F(AV) (A ) Fig.4 1N5817. Maximum values steady state forward power dissipation as a , 969 V V V 20 30 40 20 30 40 V V V 24 36 48 1 1 1 V V V 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 n o n - r e p e titiv e p e a k re v e rs e v o lta g e 20 30 40 1N5817 1N5818 1N5819 c o n tin u o u s r e v e rs e v o lta g e MAX. 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 1N5817 1N5818 1N5819 c r e s t w o r k in g re v e rs e v o


OCR Scan
PDF 1N5817 100K/W. 1N5817/1N5818/1N5819 1N5819
2013 - Not Available

Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - , 1N5817 1N5818 1N5819 Unit Maximum repetitive peak reverse voltage VRRM 20 30 40 , Version:F13 1N5817 thru 1N5819 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE , -41 DO-41 1000 / Bulk packing R0 Suffix "G" Note 1: "x" defines voltage from 20V ( 1N5817 ) to 40V (1N5819) EXAMPLE PREFERRED P/N PART NO. 1N5817 A0 1N5817 A0 1N5817 A0G


Original
PDF 1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 50mVp-p
1N817

Abstract: 1N5817 1N5819 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
Text: ; 1N5818; 1N5819 MBG434 MBG435 Fig.6 1N5817. Maximum permissible junction Fig.7 1N5817. Reverse power , Philips Semiconductors Product specification Schottky barrier diodes 1N5817 ; 1N5818; 1N5819 , • Polarity protection. DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes , Manufacturer Philips Semiconductors Product specification Schottky barrier diodes 1N5817 ; 1N5818; 1N5819 , CONDITIONS MIN. MAX. UNIT Vr continuous reverse voltage 1N5817 - 20 V 1N5818 - 30 V 1N5819 - 40


OCR Scan
PDF 1N5817; 1N5818; 1N5819 1N5817 1N5819 711DfiSb 7110fl2b 1N817 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
1N817

Abstract: 1N5819 1N5817 diode 1N5819 1N5818 datasheets diode 1n5819 1N5819 package 1N5817 schottky diode symbol 1N5819* diode datasheets diode 1n5818
Text: 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 MBG432 200 10 1N5817. Reverse power dissipation as a function of reverse voltage , DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 1N5817 ; 1N5818; 1N5819 , diodes 1N5817 ; 1N5818; 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to , Philips Semiconductors Product specification Schottky barrier diodes 1N5817 ; 1N5818; 1N5819


Original
PDF M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N817 diode 1N5819 1N5818 datasheets diode 1n5819 1N5819 package 1N5817 schottky diode symbol 1N5819* diode datasheets diode 1n5818
1N5819

Abstract: 1N817 1N5817 datasheets diode 1n5818 1N5818 1N5819 Diodes Philips applications MBG435 1n5819 philips MBG432
Text: 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 MBG432 200 10 1N5817. Reverse power dissipation as a function of reverse voltage , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817 ; 1N5818; 1N5819 Schottky , 1N5817 ; 1N5818; 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to 1N5819 types , Philips Semiconductors Product specification Schottky barrier diodes 1N5817 ; 1N5818; 1N5819


Original
PDF M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N817 datasheets diode 1n5818 1N5818 1N5819 Diodes Philips applications MBG435 1n5819 philips MBG432
1999 - 1N5819

Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
Text: 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 MBG432 200 10 1N5817. Reverse power dissipation as a function of reverse voltage , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817 ; 1N5818; 1N5819 Schottky , Semiconductors Product specification Schottky barrier diodes 1N5817 ; 1N5818; 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in


Original
PDF M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
2006 - 1N5819/50SQ100

Abstract: No abstract text available
Text: Quantity 1N5817-T3 DO-41 5000/Tape & Reel 1N5817-TB DO-41 5000/Tape & Box 1N5817 DO , ), add “-LF” suffix to part number above. For example, 1N5817-TB-LF. Won-Top Electronics Co., Ltd , 1N5817 – 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features  , Reverse Voltage DC Blocking Voltage 1N5817 0.450 0.750 0.550 0.875 0.60 0.90 V Note , . 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 1N5817 – 1N5819 1 of 4 Â


Original
PDF 1N5817 1N5819 DO-41 DO-41, MIL-STD-202, 1N5819/50SQ100
2014 - Not Available

Abstract: No abstract text available
Text: 1N5817 thru 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - , CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL 1N5817 1N5818 1N5819 Unit , Reverse Voltage of 4.0 V D.C. Document Number: D1307014 Version: F13 1N5817 thru 1N5819 Taiwan , Suffix "G" Note 1: "x" defines voltage from 20V ( 1N5817 ) to 40V (1N5819) EXAMPLE PREFERRED P/N PART NO. 1N5817 A0 1N5817 A0 1N5817 A0G 1N5817 GREEN COMPOUND PACKING CODE A0


Original
PDF 1N5817 1N5819 2011/65/EU 2002/96/EC DO-204AL DO-41) JESD22-B102 D1307014
2012 - VISHAY 1N5817

Abstract: 1N85
Text: -1N8517TR VS- 1N5817 -M3 VS- 1N5817TR -M3 QUANTITY PER T/R 1000 5000 1000 5000 MINIMUM ORDER QUANTITY 1000 5000 , VS- 1N5817 , VS- 1N5817 -M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS- 1N5817 . axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS- 1N5817 20 VS- 1N5817 -M3 20 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS- 1N5817 , VS- 1N5817


Original
PDF VS-1N5817, VS-1N5817-M3 2002/95/EC DO-204AL DO-41) 11-Mar-11 VISHAY 1N5817 1N85
1N5819

Abstract: 1N5817 1N5817 SJ diode 5819 1N5817 diode 1N5819 sot-23 marking SJ 1N5817 schottky diode symbol 5819 DIODE sot-23 Marking sj
Text: www.haorm.cn 1N5817 , 1N5819 tel:86-769-87058050 SOT-23-3L SCHOTTKY DIODE FEATURES + 1 , V VR : 1N5817 : 1N5819: 40 V Operating and storage junction temperature range TJ: 150 Tstg: -55 to +150 1N5817 1N5819 - 3.CATHODE Marking: SJ MarkingSL ELECTRICAL CHARACTERISTICS , Forward Diode leakage current Symbol V(BR) IR Test IR= 1mA 1N5817 1N5819 VR=20V 1N5817 VR=40V 1N5819 voltage VF IF=1A* IF=1A* IF=3A* IF=3A* capacitance CD VR


Original
PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 1N5819 1N5817 1N5817 SJ diode 5819 1N5817 diode 1N5819 sot-23 marking SJ 1N5817 schottky diode symbol 5819 DIODE sot-23 Marking sj
2004 - C1104

Abstract: No abstract text available
Text: Bulletin PD-20646 rev. C 11/04 1N5817 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and , °C range Description/Features Units A V A V °C The 1N5817 axial leaded Schottky rectifier has been , www.irf.com 1 1N5817 Bulletin PD-20646 rev. C 11/04 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) 1N5817 20 Absolute Maximum Ratings , 25°C 1N5817 Units 1.0 240 40 A A Conditions 50% duty cycle @ TL = 138 °C, rectangular wave


Original
PDF PD-20646 1N5817 1N5817 C1104
2006 - 1N5819

Abstract: 1N5817-1N5819 1N5818-TB 1N5818-T3 1N5818 1N5817-TB 1N5817-T3 1N5817 DIODE 1n5819 Diode case DO41
Text: Quantity 1N5817-T3 DO-41 5000/Tape & Reel 1N5817-TB DO-41 5000/Tape & Box 1N5817 DO , ), add "-LF" suffix to part number above. For example, 1N5817-TB-LF. Won-Top Electronics Co., Ltd , 1N5817 ­ 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! , Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1N5817 0.450 0.750 , . 1N5817 ­ 1N5819 1 of 4 © 2006 Won-Top Electronics 1.0 IF, NSTANTANEOUS FORWARD CURRENT (A


Original
PDF 1N5817 1N5819 DO-41 DO-41, MIL-STD-202, 1N5819 1N5817-1N5819 1N5818-TB 1N5818-T3 1N5818 1N5817-TB 1N5817-T3 1N5817 DIODE 1n5819 Diode case DO41
2008 - Not Available

Abstract: No abstract text available
Text: Schottky Barrier Rectifier 1N5817 THRU 1N5819 List Formosa MS List , 1N5817 THRU 1N5819 1.0A Leaded Type Schottky Barrier Rectifiers - 20V-40V Features · Axial lead type , resistance Diode junction capacitance Storage temperature mA O C/W pF O C SYMBOLS 1N5817 1N5818 , Page. 6 Page 2 DS-222644 Rating and characteristic curves ( 1N5817 THRU 1N5819) FIG , Load 0.375"(9.5mm) Lead Length 10 1N5817 3.0 1N5818 1N5819 1.0 TJ=25 C Pulse Width 300us 1


Original
PDF 1N5817 1N5819 125oC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2
2011 - Not Available

Abstract: No abstract text available
Text: 1N5817 , 1N5818, 1N5819 Low drop power Schottky rectifier Features Very small conduction , 2011 Doc ID 6262 Rev 5 1/7 www.st.com 7 Characteristics 1N5817 , 1N5818, 1N5819 1 , values) Value Parameter 1N5817 Repetitive peak reverse voltage Forward rms current Average forward , 1N5817 0.5 10 0.45 0.75 1N5818 0.5 10 0.50 0.80 1N5819 0.5 10 0.55 0.85 Unit mA mA V V VF (1) 1 , 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 2


Original
PDF 1N5817, 1N5818, 1N5819 DO-41 DO-41
2012 - Not Available

Abstract: No abstract text available
Text: . 1N5817-H. Formosa MS Package outline DO-41 1.0(25.4) MIN. .107(2.7) .080(2.0) DIA. .205(5.2) .166 , Schottky Barrier Rectifier 1N5817 THRU 1N5819 List Formosa MS List , Barrier Rectifier 1N5817 THRU 1N5819 1.0A Axial Leaded Schottky Barrier Rectifiers - 20V-40V Features , pF O C SYMBOLS 1N5817 1N5818 1N5819 V RMS*2 (V) 14 21 28 *3 VR (V) 20 30 40 *4 VF (V , 2010/03/10 Revision B Page. 6 Page 2 DS-222644 Rating and characteristic curves ( 1N5817


Original
PDF 1N5817 1N5819 1000hrs. DS-222644
2005 - diode 1N5819

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817 , : 300 mW (Ta=25℃) Collector current IF : 1 A Collector-base voltage VR : 1N5817 : 20 V 1N5819: 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1N5817 1N5819 , IR= 1mA conditions 1N5817 1N5819 VR=20V voltage VF capacitance CD VR , . otherwise 1N5817 1N5819 1N5817 1N5819 f=1MHz µA 0.45 0.6 0.75 0.9 V 120 pF


Original
PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 diode 1N5819
2002 - 1N5817

Abstract: DO-204AL
Text: Bulletin PD-20646 rev. A 02/02 1N5817 1.0 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Description/Features Characteristics 1N5817 Units IF(AV) Rectangular 1.0 A , V TJ range - 65 to 150 °C The 1N5817 axial leaded Schottky rectifier has been , -41) Dimensions in millimeters and inches www.irf.com 1 1N5817 Bulletin PD-20646 rev. A 02/02 Voltage Ratings Part number VR 1N5817 Max. DC Reverse Voltage (V) 20 VRWM Max. Working Peak


Original
PDF PD-20646 1N5817 1N5817 DO-204AL
2006 - sot-23 Marking sj

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817 , =25℃) Collector current IO : 1A Collector-base voltage VR : 1N5817 : 20 V 1N5819: 40 V Operating and storage junction temperature range TJ: 150℃ Tstg: -55℃ to +150℃ 1N5817 1N5819 - 3 , (BR) IR Test IR= 1mA 1N5817 1N5819 VR=20V 1N5817 VR=40V 1N5819 voltage VF IF=1A* IF=1A* IF=3A* IF=3A* capacitance CD VR=4V * pulse test. conditions 1N5817


Original
PDF OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 sot-23 Marking sj
2011 - 1n5819

Abstract: No abstract text available
Text: 1N5817 , 1N5818, 1N5819 Low drop power Schottky rectifier Features I Very small conduction , 5 1/7 www.st.com 7 Characteristics 1 1N5817 , 1N5818, 1N5819 Characteristics Table 2. Absolute ratings (limiting values) Value Symbol Parameter Unit 1N5817 VRRM IF , Tests conditions Tj = 25 °C Tj = 100 °C VR = VRRM 1N5817 1N5818 1N5819 Unit 0.5 , evaluate the conduction losses use the following equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817


Original
PDF 1N5817, 1N5818, 1N5819 DO-41 DO-41 1n5819
2010 - 1N5819

Abstract: datasheets diode 1n5818 15KV 1N5817 1N5818
Text: 1N5817-HE thru 1N5819-HE Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current , 1N5817-HE thru 1N5819-HE 2. Characteristic Curves ( TA = 25°C unless otherwise noted ) Fig. 2 ­ Maximum , t,Pulse duration,sec 100 0.1 1 10 Reverse Voltage (V) 100 1N5817-HE thru 1N5819-HE 3. dimension: 1N5817-HE thru 1N5819-HE 4.Taping Specification 42/tape W 42 -1.0/+0.5 P 5±0.5 L1-L2 1.0 H 6±1.0 Z 1.0 R 1.0 T 3.5 1N5817-HE thru


Original
PDF 1N5817-HE 1N5819-HE IEC61000-4-2 DO-41, MIL-STD-750, 50mVp-p 1N5819 datasheets diode 1n5818 15KV 1N5817 1N5818
2013 - Not Available

Abstract: No abstract text available
Text: VS- 1N5817 , VS- 1N5817 -M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , (-M3 only) DESCRIPTION The VS- 1N5817 . axial leaded Schottky rectifier has been optimized for , VS- 1N5817 VS- 1N5817 -M3 UNITS 20 20 V VRWM Maximum working peak reverse voltage , www.vishay.com/doc?91000 VS- 1N5817 , VS- 1N5817 -M3 www.vishay.com Vishay Semiconductors ELECTRICAL , -41) oz. 1N5817 Note (1) dP tot 1 - < - thermal runaway condition for a


Original
PDF VS-1N5817, VS-1N5817-M3 DO-204AL 2002/95/EC DO-41) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2003 - 1n5819 equivalent

Abstract: No abstract text available
Text: 1N5817-19 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 , 1N5817 , 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , Polarity Band Marking: 1N5817 , 1N5818, 1N5819 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS , MARKING DIAGRAM 1N 581x 1N581x = Device Code x = 7, 8 or 9 ORDERING INFORMATION Device 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial Lead


Original
PDF 1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent
2011 - Not Available

Abstract: No abstract text available
Text: ) .080(2.0) DIA. .205(5.2) MIL-STD-19500 /228 Suffix "-H" indicates Halogen free parts, ex. 1N5817-H. , Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List , /02/10 2010/03/10 Revision B Page. 6 Formosa MS Schottky Barrier Rectifier 1N5817 , RMS*2 (V) *3 VR (V) *4 VF (V) 1N5817 20 14 20 30 21 30 0.55 , and characteristic curves ( 1N5817 THRU 1N5819) FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT


Original
PDF 1N5817 1N5819 1000hrs. MIL-STD-750D METHOD-1038 METHOD-1031 MIL-STD-202F METHOD-215
2007 - 1N5817

Abstract: C1104 DO-204AL
Text: Bulletin PD-20646 rev. C 11/04 1N5817 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and , V TJ range - 65 to 150 °C The 1N5817 axial leaded Schottky rectifier has been , 1 1N5817 Bulletin PD-20646 rev. C 11/04 Voltage Ratings Part number VR 1N5817 Max , Ratings Parameters 1N5817 Units IF(AV) Max. Average Forward Current 1.0 Max. Peak One Cycle , Specifications Parameters 1N5817 Units TJ Max. Junction Temperature Range (2) - 65 to 150 °C Tstg


Original
PDF PD-20646 1N5817 1N5817 12-Mar-07 C1104 DO-204AL
Supplyframe Tracking Pixel