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Broadcom Limited
1N5719 RF DIODE PIN 150V 250MW
1N5719 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key 1N5719 Bulk 0 500 - - - $8.0401 $8.0401 More Info
Hewlett Packard Co
1N5719
1N5719 ECAD Model
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Bristol Electronics 1N5719 2 - - - - - More Info
Others
1N5719
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PUI 1N5719 5 - - - - - More Info
MACOM
1N5719-54 RF PIN DIODE
1N5719-54 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Richardson RFPD 1N5719-54 17 1 $20.43 $20.43 $20.43 $20.43 $20.43 More Info

1N5719 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
1N5719 1N5719 ECAD Model Advanced Semiconductor Silicon PIN diode Original PDF
1N5719 1N5719 ECAD Model Agilent Technologies DIODE PIN ATTENUATOR/SWITCH 150V Original PDF
1N5719 1N5719 ECAD Model Avago Technologies Axial lead glass packaged PIN diodes Original PDF
1N5719 1N5719 ECAD Model Broadcom Discrete Semiconductor Products - Diodes - RF - DIODE PIN GEN PURP SW 150V AXIAL Original PDF
1N5719 1N5719 ECAD Model Hewlett-Packard Diode and Transistor Data Book 1980 Scan PDF
1N5719 1N5719 ECAD Model Hewlett-Packard Pin Diodes for RF Switching and Attenuating Scan PDF
1N5719 1N5719 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N5719 1N5719 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1N5719 1N5719 ECAD Model Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF

1N5719 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - 1N5719

Abstract: No abstract text available
Text: | | CONTACT US | VIEW CART | SHIPPING http://store.americanmicrosemiconductor.com/ 1n5719.html 4/12 , 1N5719 SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKA. Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 1N5719 1N5719 SCHOTTKY DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY , Save: 1N5719 $ 24.00 Information Spec Sheets Tutorials Shipping FAQs $ 19.20 $ 4.80 Company


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PDF 1N5719 1N5719 com/1n5719
2004 - Not Available

Abstract: No abstract text available
Text: Submit ¡ ¡ 1N5719 Availability Buy 1N5719 at our online store ! 1N5719 Information Cate gory » Diodes Class » PIN Diodes Type » General Purpose 1N5719 Specifications Milita ry/High-R e l


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PDF 1N5719
1N5767

Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719 , 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description , ) General Pu rpose Switching arid Attenuating 3001 0.25 200 150 0.25 3039 0.3* 150 1N5719 0.3


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PDF 1N5719, 1N5767, IN5767 1N5767
diode 5082-3168

Abstract: 5082-3168 JAN1N5719 1N5719 HP 5082-3168 HPND-4165 1N5767 RS-296-D 1N5719 JAN hp pin diode 5082-3081
Text: HEWLETT '£1 PACKARD PIN Diodes for RF Switching and Attenuating Technical Data 1N5719 , JAN1N5719/TX 1N5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080/81 5082-3168/88 5082-3379 HPND-4165/66 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low , Series 1N5719 devices are well suited for applications that require the high reliability of a JAN/TX , 100 (min.) 100 (typ.) 3039 0.25 150 1.25 100 (min.) 100 (typ.) 1N5719 0.3* 150 1.25 100 (min.) 100


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PDF 1N5719, JAN1N5719/TX 1N5767 HPND-4165/66 RS-296-D. 1N5719 diode 5082-3168 5082-3168 JAN1N5719 HP 5082-3168 HPND-4165 RS-296-D 1N5719 JAN hp pin diode 5082-3081
1N5 diode

Abstract: 1N57xx 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
Text: , and RF limiters.Ct=0.4pF. 1N5719 , 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81 , General Purpose Switching and Attenuating 3001 0.25 200 3039 0.25 150 1N5719 0.3* 150


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PDF 5082-3xxx 1N5719, 1N5767, 5082-xxxx 5082xxxx 1N5712 T25/1N57xx 1N57xx 1N5 diode 1N5712 1N5719 1N5767 RS-296-D 5082-XXXX
JANTX1N5719

Abstract: Diode LT 443 1N5719 1N5719 JAN 1N5719 JANTX
Text: HEWLETT-PACKARD COMPONENTS PIN SWITCHING DIODE MILITARY APPROVED MIL-S-19500/443 JAN 1N5719 JANTX1N5719 Features LARGE DYNAMIC RANGE LOW HARMONIC DISTORTION HIGH SERIES ISOLATION Description/Applications The JAN Series 1N5719 is a planar passivated silicon PIN diode designed for use in RF switching circuits. These devices are well suited for variable attenuator, AGC, modulator, limiter, and phase shifter , 1N5719 : Devices undergo 100% screening tests as listed below to the conditions and limits specified by


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PDF MIL-S-19500/443 1N5719 JANTX1N5719 MlL-S-19500/443) 1071E lo-70mAdc, 70mAdc, -120V MIL-STD-202, JANTX1N5719 Diode LT 443 1N5719 JAN 1N5719 JANTX
Not Available

Abstract: No abstract text available
Text: asii SILICON PIN DIODE 1N5719 PACKAGE STYLE 01 DESCRIPTION: The 1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If Vr Pd i s s Tj Ts t g 0 jc 1O O mA 15O V 25O mW @ Ta = 25 °C -65 to +2OO 0C -65 to +2OO 0C O.70C/mW CHARACTERISTICS SYMBOL < BR Ct Rs t trr Ir = 10 mA Vr = 1 0 0 V If = 100 mA If = 50 mA V r = 10 V tc = 25 0c m in im u m t e s t c o n d it io n s TYPICAL m a x


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PDF 1N5719 1N5719 70C/mW
Not Available

Abstract: No abstract text available
Text: 1N5719+JAN Diodes General Purpose PIN Diode Military/High-RelY Volt Req. (V)150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.250f Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition) Maximum Operating Temp (øC)150 Package StyleAxial Mounting StyleT Description American Microsemiconductor


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PDF 1N5719
1998 - hp 3077

Abstract: HP 5082-3188 hp pin diode 5082-3081 hp 3080 diode 1N5767 IN5719 HP 5082-3379 diode hp 3039 1N5719 RS-296-D
Text: tape and reel specification is patterned after RS-296-D. 1N5719 1N5767 5082-3001 5082-3039 , ) General Purpose Switching and Attenuating 3001 0.25 200 3039 0.25 150 1N5719 0.3* 150 3077 0.3


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PDF 5966-0941E 5967-5812E hp 3077 HP 5082-3188 hp pin diode 5082-3081 hp 3080 diode 1N5767 IN5719 HP 5082-3379 diode hp 3039 1N5719 RS-296-D
2006 - 1N5767

Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Text: 1N5719 , 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF , 3001 0.25 200 3039 0.25 150 1N5719 0.3* 150 3077 0.3 200 Band Switching 3188 1.0


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PDF 1N5719, 1N5767, 1N5712 5082-3xxx T25/1N57xx 1N57xx 5082-3xxx/ 1N57xx 5989-3339EN 1N5767 DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
5082-XXXX

Abstract: 1N5712 1N5719 1N5767 RS-296-D 1N5 diode 30 MHz phase shifters 5082-3188
Text: , and RF limiters.Ct=0.4pF. 1N5719 , 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81 , General Purpose Switching and Attenuating 3001 0.25 200 3039 0.25 150 1N5719 0.3* 150


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PDF 5082-3xxx 1N5719, 1N5767, 5082-xxxx 5082xxxx 1N5712 T25/1N57xx 1N57xx 5082-XXXX 1N5712 1N5719 1N5767 RS-296-D 1N5 diode 30 MHz phase shifters 5082-3188
Not Available

Abstract: No abstract text available
Text: 44475A4 G ütm ib 751 «HPA b lE 1 > V7OE 1 H E W L E T T f t " / J P A C KA R D HEWLETT-PACKARD/ CMPNTS PIN Diodes for RF Switching and Attenuating Technical Data 1N5719 , JAN1N5719/TX 1N5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080/81 5082-3168/88 5082-3379 HPND , after RS-296-D. Note: The JA N Series 1N5719 devices are well suited for applications th a t require , ) G eneral Pur pose Sw itching anc A ttenuating 3002 0.25 300 P a rt N u m ber 60823001 3039 1N5719


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PDF 44475A4 1N5719, JAN1N5719/TX 1N5767 HPND-4165/66 RS-296-D. 1N5719 JAN1N5719 JAN1N5719TX
1N5719

Abstract: 1N5719 JAN Jan1N5719
Text: What HEWLETT m L 'fiMPACKARD PIN Diodes for RF Switching and Attenuating Technical Data 1N5719 , JAN1N5719/TX 1N5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080/81 5082-3168/88 5082-3379 HPND-4165/66 F eatu res · · · · Low Harmonic Distortion Large Dynamic Range Low Series , specification is patterned after RS-296-D. Note: The JAN Series 1N5719 devices are well suited for applications , 1N5719 3077 F a st Sw itch ng 3042 3043 B and Switc' ling 3188 3168 T est Conditions 1.0* 2.0* VR = 50 V


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PDF 1N5719, JAN1N5719/TX 1N5767 HPND-4165/66 RS-296-D. 1N5719 JAN1N5719 JAN1N5719TX MIL-STD-750. 1N5719 JAN
Not Available

Abstract: No abstract text available
Text: specification is patterned after RS-296-D. 1N5719 1N5767 5082-3001 5082-3039 5082-3042/43 5082-3077 , 1N5719 0.3* 200 3077 0.3 Fast Switcl ting 0.4* 70 3042 3043 0.4* 50 Band Switc hing 35


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PDF
HP 5082-3081

Abstract: diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
Text: HEWLETTPACKARD COMPONENTS PIN DIODES FOR RF SWITCHING AND ATTENUATING 5082-3001/02 HPND-4165/66© 5082-3039( 1N5719 ) 5082 3042/43 5082-3077 5082-3080 (1N5767) 5082-3081 5082 3168/88 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT Typically Less Than 20% Resistance Change from 25°C to 100°C Description / Applications These , HPND-4165/66 Tin Painted 5082-3039 1N5719 Tin Painted 5082-3042/43 Gold Painted 5082-3077 Tin Clear


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PDF HPND-4165/66Â 1N5719) 1N5767) curr080, IN5719 HP 5082-3081 diode 5082-3168 HPND-4165 HP 5082-3168 vhf antenna mtbf hp 3042 1N5767 5082-3168 diode 5082-3001 5082-3042
1999 - in5719

Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Text: Agilent 1N5719 , 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features · Low Harmonic Distortion · Large Dynamic Range Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters , 3039 0.25 150 1N5719 0.3* 150 3077 0.3 200 Band Switching 3188 1.0* 35 Test VR = 50 V


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PDF 1N5719, 1N5767, 5082-3xxx/ 1N57xx 5968-7182E 5989-3339EN in5719 DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
2000 - diode 5082-3077

Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719 , 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features · Low Harmonic Distortion · Large Dynamic Range · Low Series Resistance · Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna , 3039 0.25 150 1N5719 0.3* 150 3077 0.3 200 Band Switching 3188 1.0* 35 Test VR = 50 V


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PDF 1N5719, 1N5767, IN5719 5082-xxxx 5082-xxxx 1N5712 5967-5812E 5968-7182E diode 5082-3077 IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
1N5767

Abstract: 5082-XXXX
Text: Thol mLUM HEW LETT PACKARD PIN Diodes for RF Switching and Attenuating Technical Data 1N5719 1N5767 5082-3001 5082-3039 5082-3042/43 5082-3077 5082-3080/81 5082-3188 5082-3379 Features · · · · Low Harmonic Distortion Large Dynamic Range Low Series Resistance Low Capacitance Description/Applications These general purpose switching diodes are intended for low pow er switching , .) 1N5719 0.3* 150 1.25 100 (min.) 100 (typ.) 3077 0.3 200 1.5 100 (min.) 100 (typ) Fast Switclling 3042


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PDF 1N5719 1N5767 5965-9144E 5966-0941E 0017S77 5082-XXXX
1N5719

Abstract: No abstract text available
Text: TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 1N5719 PACKAGE STYLE 01 .075(1.9051 .065(1.651) DESCRIPTION: 1.0 MIN (254) 2 PLACES The1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. CATHODE BAND .165(4.191) .145(3.683) MAXIMUM RATINGS IF 100mA VR 150V PDISS 250 mW @ TA = 25 °C Tj -65 C to +200 °C TSTG o -65 C to


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PDF 1N5719 The1N5719 100mA 1N5719
1997 - HP 5082-3081

Abstract: 5082-3043 HP 3379 HP 5082-3188 5082-3042 hp 3080 diode 1N5767 diode 5082-3042 diode 5082-3080 in5719
Text: tape and reel specification is patterned after RS-296-D. 1N5719 1N5767 5082-3001 5082-3039 , Voltage VBR (V) General Purpose Switching and Attenuating 3001 0.25 200 3039 0.25 150 1N5719


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PDF
Not Available

Abstract: No abstract text available
Text: 1N5719 asi SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: T he1N 5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS If 100 mA Vr 150 V P diss 250 mW @ Ta = 25 °C Tj -65 to +200 °C T stg -65 to +200 °C 0JC 0.7°C/mW CHARACTERISTICS SYMBOL tc = 2 5 °c MINIMUM TEST CONDITIONS TYPICAL MAXIMUM UNITS V V br Ir = 10 hA Cj V r =


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PDF 1N5719
1N5719 JANTX

Abstract: 1N5719 JAN 1N5719 JANTX 1N5719
Text: NOTICE OF CANCELLATION INCH-POUND MIL-PRF-19500/443B NOTICE 2 11 June 2002 SUPERSEDING NOTICE 1 30 August 2001 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N5719 JAN, JANTX AND JANTXV MIL-PRF-19500/443B, dated 2 July 1999, is hereby canceled. Future acquisition for this material should refer to DSCC Drawing 01038. Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2575) Review


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PDF MIL-PRF-19500/443B 1N5719 MIL-PRF-19500/443B, 1N5719 JANTX 1N5719 JAN 1N5719 JANTX 1N5719
1999 - 1N5719

Abstract: pin diode
Text: 1N5719 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: The1N5719 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 150 V PDISS 250 mW @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC 0.7 C/mW O O O O O O NONE CHARACTERISTICS SYMBOL O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA


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PDF 1N5719 The1N5719 1N5719 pin diode
d823

Abstract: hp 3077 HP 5082-3081 5082-3039 HP 5082-3039 in5767 5082-XXXX hp 3077 diode
Text: Wfipl m H H M HEW LETT PACKARD PEN Diodes for RF Switching and Attenuating Technical Data 1N5719 1N5767 5082-3001 5082-3039 5082-3077 5082-3080/81 5082-3188 5082-3379 Features · · · · Low Harm onic D istortion Large Dynam ic Range Low S eries R esistance Low C apacitance These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna , rpose Switching arid Attenuating 3001 0.25 200 3039 0.25 150 1N5719 0.3* 150 3077 0.3 200 Band Switc


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PDF 1N5719 1N5767 5966-0941E 5967-5812E d823 hp 3077 HP 5082-3081 5082-3039 HP 5082-3039 in5767 5082-XXXX hp 3077 diode
JANTX1N5719

Abstract: 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
Text: with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions 1N5719. , . 037Z3 TITLE SEMICONDUCTOR DEVICE, PIN DIODE, SILICON, TYPE 1N5719 DWG NO. 01038 PAGE , | | Drawing number 1N5719 | | Device type NONTX, TX | | Quality level 1.2.1 Device types. The


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PDF MIL-PRF-19500/443 037Z3 JANTX1N5719 01038-1N5719TX C68001 1N5719 equivalent MA1N5719HX 1N4456 96341 HP JANTX1N5719 MA1N5719 C-68001
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