The Datasheet Archive

1N5711 datasheet (68)

Part ECAD Model Manufacturer Description Type PDF
1N5711 1N5711 ECAD Model Agilent Technologies Schottky Barrier Diodes for General Purpose Applications Original PDF
1N5711 1N5711 ECAD Model Avago Technologies Low 1/f noise general purpose Schottky diode Original PDF
1N5711 1N5711 ECAD Model Compensated Devices SCHOTTKY BARRIER DIODES Original PDF
1N5711 1N5711 ECAD Model Diodes SCHOTTKY BARRIER SWITCHING DIODE Original PDF
1N5711 1N5711 ECAD Model Diodes Short Form Selection Guide Original PDF
1N5711 1N5711 ECAD Model Diodes Schottky Barrier Switching Diode Original PDF
1N5711 1N5711 ECAD Model EIC Semiconductor Schottky Barrier Diodes Original PDF
1N5711 1N5711 ECAD Model Galaxy Semi-Conductor Holdings SMALL SIGNAL SCHOTTKY DIODES Original PDF
1N5711 1N5711 ECAD Model General Semiconductor Rectifier Diode, Schottky Diode, Single, 70V, DO-35, 2-Pin Original PDF
1N5711 1N5711 ECAD Model General Semiconductor Schottky Diodes Original PDF
1N5711 1N5711 ECAD Model Good-Ark Rectifier Diode, Schottky Diode, Single, 70V, SOD-27, 2-Pin Original PDF
1N5711 1N5711 ECAD Model Good-Ark Small-Signal Diode Schottky Diodes Original PDF
1N5711 1N5711 ECAD Model Lite-On Technology SCHOTTKY BARRIER SWITCHING DIODE Original PDF
1N5711 1N5711 ECAD Model Micro Commercial Components Schottky Barrier Switching Diode Original PDF
1N5711 1N5711 ECAD Model STMicroelectronics DIODE SCHOTTKY DIODE 70V 0.015A 2DO-35 Original PDF
1N5711 1N5711 ECAD Model STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original PDF
1N5711 1N5711 ECAD Model STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original PDF
1N5711 1N5711 ECAD Model STMicroelectronics SMALL SIGNAL SCHOTTKY DIODE Original PDF
1N5711 1N5711 ECAD Model Taitron Components Rectifier Diode, Schottky Diode, Single, 70 MinV, SOD-27, 2-Pin Original PDF
1N5711 1N5711 ECAD Model Vishay 1N5711 Spice Parameters Original PDF

1N5711 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
5082-2815

Abstract: 5082-2370 1n5712 5082-2813 150 AVP 5082-2800 diode 5082-2800 1N5711 5082-2811
Text: Data 1N5711 , JAN1N5711/TX/TXV 1N5712 JAN1N5712/TX/TXV 5082-2300 Seríes 5082-2800 Seríes 5082-2900 , well suited for use in Doppler or narrow band video receivers. Note: The JAN Series 1N5711 and the JAN , device. The TX and TXV devices have solder dipped leads. Both the JAN Series 1N5711 and 1N5712 undergo , (.068) Description/ Applications 3.81 160 The 1N5711 , 1N5712, 50822800/10/11 are passivated , , -2900.-60°C to +100°C for low tum-on voltage. The 1N5711 , 1N5712, 5082-2800/10/11.-65


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PDF 1N5711, JAN1N5711/TX/TXV 1N5712 JAN1N5712/TX/TXV 1N5711 5082-2815 5082-2370 5082-2813 150 AVP 5082-2800 diode 5082-2800 5082-2811
2004 - 1N5711

Abstract: 1N6263 diode 1n5711 1N5711-TAP 1N5711-TR 1N6263-TAP 1N6263-TR LL5711 LL6263
Text: Ordering code Marking Remarks 1N5711 1N5711-TR or 1N5711-TAP - Tape and Reel / Ammopack , 1N5711 / 1N6263 VISHAY Vishay Semiconductors Schottky Diodes Features · For general , 1N5711 VRRM 70 V 1N6263 Peak inverse voltage VRRM 60 Power dissipation (infinite , Document Number 85645 Rev. 1.3, 26-Apr-04 www.vishay.com 1 1N5711 / 1N6263 VISHAY Vishay , 70 1N6263 Leakage current Part 1N5711 IR = 10 µA Reverse breakdown voltage VR 60


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PDF 1N5711 1N6263 LL5711 LL6263. DO-35 D-74025 26-Apr-04 1N6263 diode 1n5711 1N5711-TAP 1N5711-TR 1N6263-TAP 1N6263-TR LL6263
2004 - 1n5711 diode

Abstract: fast recovery diode 54 18529 1N6263
Text: (52 mm tape), 50 k/box TAP / 10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part 1N5711 1N6263 Ordering code 1N5711-TR or 1N5711-TAP 1N6263-TR or 1N6263-TAP Marking Remarks Tape and Reel , VISHAY 1N5711 , 1N6263 Vishay Semiconductors Schottky Diodes Features · For general , wave 1) Test condition Part 1N5711 1N6263 Symbol VRRM VRRM Ptot IFSM Value 70 60 400 1 , temperature Document Number 85645 Rev. 1.2, 06-Feb-04 www.vishay.com 1 1N5711 , 1N6263 Vishay


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PDF 1N5711, 1N6263 LL5711 LL6263. DO-35 1N5711 1N6263 1N5711-TR 1N5711-TAake D-74025 1n5711 diode fast recovery diode 54 18529
Not Available

Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N5711 , 1N5712 & 1N6263 • • SCHOTTKY DIODES For general , . MAXIMUM RATINGS @ 25°C ambient temperature unless otherwise specified. Parameter Symbol 1N5711 , - 1.0 - - 2.0 - - 2.0 - - 2.2 1N5711 1N5712 V(BR)R lR=10μA 1N6263 Leakage Current 1N5711 , 1N6263 1N5712 Forward Voltage Drop lR 1N5711 , 1N6263 VF 1N5712 Junction Capacitance 1N5711 1N5712 Ctot 1N6263 144 Market Street Kenilworth NJ


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PDF 1N5711, 1N5712 1N6263 1N5711 DO-35 MIL-PRF-19500,
2006 - 1n5711 diode

Abstract: No abstract text available
Text: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , Part Symbol Value Unit 1N5711 VRRM 70 V 1N6263 VRRM 60 V Maximum , Reverse recovery time trr Test Conditions Part Min Typ Max Unit 1N5711 70 - , V IF=15mA - - 1.0 V 1N5711 - - 2.0 pF 1N6263 - - 2.2 pF , Semiconductor www.excel-semi.com FaxBack +86-512-66607370 Rev. 3d, 1-Jan-2006 1/3 1N5711 / 1N6263 IF


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PDF 1N5711 1N6263 LL5711 LL6263. 1N5711 1-Jan-2006 1n5711 diode
1N6263

Abstract: 1N5711 1N5711-TAP 1N5711-TR 1N6263-TAP 1N6263-TR LL5711 LL6263 18529
Text: Ordering code Marking Remarks 1N5711 1N5711-TR or 1N5711-TAP - Tape and Reel /Ammopack , 1N5711 , 1N6263 VISHAY Vishay Semiconductors Schottky Diodes Features · For general , 1N5711 VRRM 70 V 1N6263 Peak inverse voltage VRRM 60 Power dissipation (infinite , Document Number 85645 Rev. 1.3, 13-Apr-04 www.vishay.com 1 1N5711 , 1N6263 VISHAY Vishay , 70 1N6263 Leakage current Part 1N5711 IR = 10 µA Reverse breakdown voltage VR 60


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PDF 1N5711, 1N6263 LL5711 LL6263. DO-35 D-74025 13-Apr-04 1N6263 1N5711 1N5711-TAP 1N5711-TR 1N6263-TAP 1N6263-TR LL6263 18529
1999 - IR 10e

Abstract: 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
Text: Agilent 1N5711 , 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711 , 1N5712 , .-60°C to +100°C 1N5711 , 1N5712, 5082-2800/10/11 .-65°C to +200°C , . 100 mW 1N5711 , 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711 , 1N5712


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PDF 1N5711, 1N5712, 5082-28xx/ 1N57xx 5968-7181E 5989-3338EN IR 10e 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
1N5712 spice

Abstract: 1N5711 spice 1N5712 1N5711 5082-2804 2800-Series 5082-2811 RS-296-D
Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 1N5711 1N5711 Low 1/f noise general purpose Schottky diode Description Lifecycle status: Active Features The 1N5711 , , sampling, and wave shaping applications. 1N5711 , 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711 , 1N5712 , Operating and Storage Temperature Range 1N5711 , 1N5712, 5082-2800/10/11. -65°C to +200°C 5082-2835


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PDF 1N5711 1N5711 1N5712 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 spice 1N5711 spice 5082-2804 2800-Series 5082-2811 RS-296-D
2009 - Not Available

Abstract: No abstract text available
Text: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , =25℃) Parameter Part Symbol Value Unit 1N5711 VRRM 70 V 1N6263 VRRM 60 V , Conditions Part Min Typ Max Unit 1N5711 70 - - V 1N6263 60 - - V , 1N5711 - - 2.0 pF 1N6263 - - 2.2 pF - - 1.0 ns IR=10μA (pulsed , +86-512-67606917 Rev. 3g, 1-Sep-2009 1/3 1N5711 / 1N6263 IF – Forward current (mA) IF – Forward


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PDF 1N5711 1N6263 1N5711 1-Sep-2009 DO-35
diode hpa 2800

Abstract: 5082-2815 1N5712 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301
Text: General Purpose Applications Technical Data 1N5711 , JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 5082-2300 , . Note: The JAN Series 1N5711 and the JAN Series 1N5712 devices are well suited for applications that , the JAN Series 1N5711 and 1N5712 undergo testing per MIL-STD-750. More information about these devices , ) 25.4 ( 1.00 ) M IN . 1.93 (.0761 1.73 (.068! ' The 1N5711 , 1N5712, 50822800/10/11 are passivated , , -2900.-60°C to +100°C for low turn-on voltage. The 1N5711 , 1N5712, 5082-2800/10/11.-65


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PDF 1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 1N5711 1N5712 diode hpa 2800 5082-2815 B2B diode 5082-2805 5082-2997 5082-2804 5082-2800 5082-2301
2005 - Not Available

Abstract: No abstract text available
Text: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , Part Symbol Value Unit 1N5711 VRRM 70 V 1N6263 VRRM 60 V Maximum , Reverse recovery time trr Test Conditions Part Min Typ Max Unit 1N5711 70 - , V IF=15mA - - 1.0 V 1N5711 - - 2.0 pF 1N6263 - - 2.2 pF , Semiconductor www.excel-semi.com FaxBack +86-512-67606917 Rev. 3c, 16-May-2005 1/3 1N5711 / 1N6263


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PDF 1N5711 1N6263 LL5711 LL6263. 1N5711 16-May-2005
1999 - diode 5082-3080

Abstract: 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
Text: 70 V · Matched Characteristics Available Description/Applications The 1N5711 , 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 The , .-60°C to +100°C 1N5711 , 1N5712, 5082-2800/10/11 .-65°C to +200°C , . 100 mW 1N5711 , 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711 , 1N5712


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PDF 1N5711, 1N5712, 1N5711 1N5712 5082-xxxx 5082-xxxx 5968-4304E diode 5082-3080 5082-2804 5082-2835 diode 5082-2800 datasheet in5712 1N5712 spice IR 10e 5082-2810 F 5082 1N5711
diode hpa 2800

Abstract: diode hpa 2900 IN5711 5082-2815 HP 2804 1N6712 HPA 2900 5082-2813 5082-2970 diode hp 2800
Text: Schottky Barrier Diodes for General Purpose Applications Technical Data 1N5711 , JAN1N5711/TX/TXV 1N5712 , €¢ Matched Characteristics Available Description/ Applications The 1N5711 , 1N5712, 50822800/10/11 are , JAN Series 1N5711 and the JAN Series 1N5712 devices are well suited for applications that require the , Series 1N5711 and 1N5712 undergo testing per MIL-STD-750. More information about these devices can be , 5082-2301, -2302, -2303, -2900.-60°C to +100°C 1N5711 , 1N5712, 5082-2800/10


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PDF 1N5711, JAN1N5711/TX/TXV 1N5712, JAN1N5712/TX/TXV 5082283s diode hpa 2800 diode hpa 2900 IN5711 5082-2815 HP 2804 1N6712 HPA 2900 5082-2813 5082-2970 diode hp 2800
IR 10e

Abstract: HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
Text: 70 V · Matched Characteristics Available Description/Applications The 1N5711 , 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 The , . -60°C to +100°C 1N5711 , 1N5712, 5082-2800/10/11 . -65°C to , . 100 mW 1N5711 , 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711 , 1N5712


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PDF 1N5711, 1N5712, 1N5711 1N5712 5082-XXXX IR 10e HP2.811 IN5712 diode 10e 1N5712 1N5712 spice 1N5711 RS-296-D 5082-2811 diode 5082-2800
5082-2815

Abstract: No abstract text available
Text: BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800 , /Applications The 1N5711 , 1N5712, 5082-2800/10/11 are passivated S c h o ttk y b a rrie r diod es w h ic h use , Range 5082-2301,2302,2303,2900 . . -6 0° C t o +100° C 1N5711 , 1N5712, 5082-2800/10/11 , . 100 mW Typical Package Capacitance: 1N5711 , 1N5712, 5082-2800/10/11 . , 1N5711 ,1N5712: 2.0 nH 2800 Series: 2.0 nH 2300.2900 Series: 3.0 nH 1N5711 ,1N5712:0.2 pF 2800 Series


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PDF 44475fi4 1N5711 1N5712 1N5711, 1N5712, Figure12. 5082-2815
2006 - diode t25 13 Go

Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
Text: 1N5711 , 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711 , 1N5712, 5082-2800/10/11 are passivated , Temperature Range 1N5711 , 1N5712, 5082-2800/10/11. -65°C to +200°C 5082-2835 , linearly to zero at maximum rated temp. 1N5711 , 1N5712, 5082-2800/10/11.250 mW , . 4 pounds pull Typical Package Inductance 1N5711 , 1N5712


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PDF 1N5711, 1N5712, 1N5712 5082-28xx T25/1N57xx 1N57xx 5082-28xx/ diode t25 13 Go 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
2002 - 1n5711 diode

Abstract: 1N6263 1N5711 1n5711 equivalent DO-204AH LL5711 LL6263
Text: 1N5711 and 1N6263 Vishay Semiconductors formerly General Semiconductor Schottky Diodes DO , µs Square Wave IFSM 2.0 A 1N5711 1N6263 Peak Inverse Voltage RJA Thermal , - 1 ns Reverse Breakdown Voltage Junction Capacitance Reverse Recovery Time 1N5711 1N6263 1N5711 1N6263 Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. Document Number 88111 8-May-02 www.vishay.com 1 1N5711 and 1N6263


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PDF 1N5711 1N6263 DO-204AH DO-35 LL5711 LL6263. D7/10K 20K/box D8/10K 1n5711 diode 1N6263 1n5711 equivalent DO-204AH LL6263
2006 - 1N5711

Abstract: 1n5711 diode 1n6263
Text: 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2 , temperature Storage temperature range Part 1N5711 1N6263 Symbol VRRM VRRM IFSM Ptot Tj TS Value 70 60 2.0 400 , =10A (pulsed) VR=50V IF=1mA IF=15mA VR=0V, f=1MHz IF= IR=5mA recover to 0.1 IR 1N5711 1N6263 Part 1N5711 1N6263 , www.excel-semi.com FaxBack +86-512-66607370 Rev. 3e, 1-Nov-2006 1/3 1N5711 / 1N6263 Characteristics (Tj , 1N5711 / 1N6263 Dimensions in mm Cathode identification Type No. 0.55 max. Cathode 2.0 max


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PDF 1N5711 1N6263 1N6263 1-Nov-2006 DO-35 1n5711 diode
1999 - HP 5082-2835

Abstract: HP 5082-2810 HP 2835 diode hp 2800 diode hp 5082- 2080 HP 5082-2900 HP 2804 HP 5082-2800 1N5711 spice in5712
Text: 70 V · Matched Characteristics Available Description/Applications The 1N5711 , 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 The , . -60°C to +100°C 1N5711 , 1N5712, 5082-2800/10/11 . -65°C to , . 100 mW 1N5711 , 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711 , 1N5712


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PDF 1N5711, 1N5712, 1N5711 1N5712 5967-5767E 5968-4304E HP 5082-2835 HP 5082-2810 HP 2835 diode hp 2800 diode hp 5082- 2080 HP 5082-2900 HP 2804 HP 5082-2800 1N5711 spice in5712
1997 - 5082-2970

Abstract: 1N5711 spice 5082-2805 in5712 5082-2804 5082-2912 HP2.811 5082-2800 5082-2835 1N5712
Text: 70 V · Matched Characteristics Available Description/Applications The 1N5711 , 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 Series The , . -60°C to +100°C 1N5711 , 1N5712, 5082-2800/10/11 . -65°C to +200°C , 1N5711 , 1N5712, 5082-2800/10/11 . 250 mW 5082-2835 , Inductance 1N5711 , 1N5712: . 2.0 nH


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PDF 1N5711, 1N5712, 1N5711 1N5712 5082-XXXX 5082-2970 1N5711 spice 5082-2805 in5712 5082-2804 5082-2912 HP2.811 5082-2800 5082-2835 1N5712
1997 - diode hp 2835 schottky

Abstract: diode hp 2800 hp2811 5966-0930E diode hp 2811 1N5711 1N5712 IN5712 RS-296-D 1N5712 spice
Text: 70 V · Matched Characteristics Available Description/Applications The 1N5711 , 1N5712, 5082-2800 , , sampling, and wave shaping. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 The , .-60°C to +100°C 1N5711 , 1N5712, 5082-2800/10/11 .-65°C to +200°C , . 100 mW 1N5711 , 1N5712, 5082-2800/10/11 . 250 mW , pull Typical Package Inductance 1N5711 , 1N5712


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PDF 1N5711, 1N5712, 1N5711 1N5712 5966-0930E 5967-5767E diode hp 2835 schottky diode hp 2800 hp2811 5966-0930E diode hp 2811 1N5711 1N5712 IN5712 RS-296-D 1N5712 spice
5082-2815

Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Text: PURPOSE APPLICATIONS 1N5711 * 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35 , /Applications The 1N5711 , 1N5712, 5082-2800/10/11 are passivated S chottky barrier diodes w hich use a patented , , 2302, 2303, 2 9 0 0 . -60°C to +100° C 1N5711 ,1N5712, 5082-2800/10/11, HSCH , . 100 mW 1N5711 , 1N5712, 5082-2800/10/11 . 250 mW 5082-2835 , HEWLETT-PACKARD» Electrical specifications a t TA=25°C Part Number 50822800 1N5711 2305 2301 2302 2303 2810


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PDF 1N5711* 1N5712* HSCH-1001 1N6263I* 1N5711, 1N5712, 1N5711 1N5711) 5082-2815 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
jantx diodes

Abstract: 1N5711 JANTX
Text: · 1N5711 AVAILABLE IN JAN, JANTX AND JANTXV · 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV · , METALLURGICALLY BONDED (-1) · DOUBLE PLUG CONSTRUCTION 1N5711 and 1N5711-1 and 1N5712-1 and DSB5712 and DSB2810 , m p eratu re fo r S ch o ttky Diode 1N5711. VR -R E V E R S E VOLTAGE (V) (P U LS E D ) Ip - , V B R@ 1 0 / ( A VOLTS D S B 28 10 1N5711 D S B 57 12 1N5712-1 20 70 20 20 V p @ 1 mA VO LTS 0.41 , (617) 665-7379 45 1N5711 , 1N5712, DSB5712 and DSB2810 INCLUDING -1 VERSIONS V F - FORWARD


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PDF 1N5711 1N5711-1 1N5712-1 DSB5712 DSB2810 1N5711. jantx diodes 1N5711 JANTX
2003 - 1n5711 diode

Abstract: 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JX, JAN, Schottky
Text: · 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 · 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/445 · SCHOTTKY BARRIER DIODES · HERMETICALLY SEALED · METALLURGICALLY BONDED 1N5711 1N5711-1 , Typical Forward Voltage Variation with Temperature for Schottky Diode 1N5711. 1.2 30 100 10 , 15 2.0 1 1N5711 ,-1 70 0.41 1.0@15 200 50 2.0 1 DSB5712 20 0.41 , ) 689-0803 WEBSITE: http://www.microsemi.com 63 1N5711 , 1N5712, 1N6857, 1N6858 DSB5712 and DSB2810


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PDF 1N5711-1 MIL-PRF-19500/444 1N5712-1 MIL-PRF-19500/445 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 1n5711 diode 1N5711 1N6857-1 1N6858-1 DSB2810 DSB5712 JANTX, JX, JAN, Schottky
1N5712 JANTX

Abstract: 1N5712-1 JANTX diode 1n5711 1N5711 JANTXV 1N5711-1 N5711 1N5711 1N5712 1N5712-1 DSB2810
Text: PLUG CONSTRUCTION 1N5711 and 1N5711-1 and 1N5712-1 and DSB5712 and DSB2810 MAXIMUM RATINGS , • 1N5711-1 AVAILABLE IN JAN, JANTX AND JANTXV • 1N5712-1 AVAILABLE IN JAN, JANTX AND JANTXV , Diode 1N5711. Vp - REVERSE VOLTAGE (V) (PULSED) Figure 4. 1N5711 Typical Variation of Reverse Current , PICO FARADS DSB2810 20 0.41 35 100 15 2.0 1N5711 70 0.41 15 200 50 2.0 DSB5712 20 0.41 35 150 16 2.0 , Respective Manufacturer 1N5711 ,1N5712, DSB5712 and DSB2810 INCLUDING -1 VERSIONS VF - FORWARD VOLTAGE (V


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PDF 1N5711-1 1N5712-1 1N5711 DSB5712 DSB2810 DSB2810 1N5711. 1N5712 JANTX 1N5712-1 JANTX diode 1n5711 1N5711 JANTXV N5711 1N5712
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