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Part Manufacturer Description Datasheet Download Buy Part
1N5624GP-E3/54 Vishay Semiconductors DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
1N5624-TAP Vishay Semiconductors DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
1N5624GP-E3/73 Vishay Semiconductors DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode
1N5624-TR Vishay Semiconductors Diode Switching 200V 3A 2-Pin SOD-64 T/R
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Search Stock (28)

  You can filter table by choosing multiple options from dropdownShowing 28 results of 28
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1N5624 Harris Semiconductor Rochester Electronics 17,030 $0.45 $0.37
1N5624 Unknown Bristol Electronics 203 - -
1N5624 Vishay Semiconductors Bristol Electronics 76 - -
1N5624 General Electric Company Bristol Electronics 100 - -
1N5624 NTE Electronics Inc Newark element14 263 $1.93 $1.49
1N5624 NTE Electronics Inc Farnell element14 - £1.55 £1.25
1N5624 New Jersey Semiconductor Products, Inc. Bristol Electronics 4,510 - -
1N5624 General Electric Company Bristol Electronics 120 $0.38 $0.19
1N5624 GS Battery ComS.I.T. 500 - -
1N5624 TR Central Semiconductor Corp Avnet - $1.19 $1.19
1N5624-TAP Vishay Intertechnologies Avnet - $0.33 $0.29
1N5624-TAP Vishay Intertechnologies Avnet - €0.58 €0.29
1N5624-TR Vishay Intertechnologies Future Electronics - $0.52 $0.32
1N5624-TR Vishay Intertechnologies Future Electronics - $0.29 $0.29
1N5624-TR Vishay Intertechnologies Avnet - $0.92 $0.46
1N5624-TR Vishay Intertechnologies Avnet - $0.30 $0.30
1N5624-TR Vishay Intertechnologies Chip1Stop 6,958 $0.49 $0.40
1N5624-TR Vishay Intertechnologies Avnet 10,000 €0.58 €0.29
1N5624-TR. Vishay Intertechnologies element14 Asia-Pacific 2,225 $1.41 $0.48
1N5624-TR. Vishay Intertechnologies Farnell element14 - £0.57 £0.35
1N5624GP General Instrument Bristol Electronics 1,500 $0.38 $0.07
1N5624GP-E3/54 Vishay Intertechnologies element14 Asia-Pacific - $1.00 $0.53
1N5624GP-E3/54 Vishay Semiconductors Allied Electronics & Automation - $0.28 $0.23
1N5624GP-E3/54 Vishay Intertechnologies Farnell element14 1,119 £0.51 £0.28
1N5624GPE354 Vishay Intertechnologies ComS.I.T. 23,800 - -
1N5624GPHE354 Vishay Intertechnologies ComS.I.T. 1,400 - -
1N5624TR Central Semiconductor Corp Bristol Electronics 230 - -
1N5624TR Vishay Intertechnologies ComS.I.T. 10,000 - -

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1N5624 datasheet (37)

Part Manufacturer Description Type PDF
1N5624 Central Semiconductor GLASS PASSIVATED RECTIFIER Original PDF
1N5624 EIC Semiconductor Glass Passivated Rectifier Diodes Original PDF
1N5624 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
1N5624 General Semiconductor DIODE STANDARD RECOVERY RECTIFIER 200V 3A 2DO-201AD Original PDF
1N5624 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
1N5624 Taitron Components Rectifier Diode, Single, 200V, Case Style, 2-Pin Original PDF
1N5624 Vishay Telefunken Silicon Mesa Rectifiers Original PDF
1N5624 Central Semiconductor Glass Passivated Rectifier 5.0 Amps, 200-800 Volts, GPR-3A Case Scan PDF
1N5624 EDAL Industries Silicon Rectifier Scan PDF
1N5624 General Electric Semiconductor Data Book 1971 Scan PDF
1N5624 General Electric Semiconductor Data Handbook 1977 Scan PDF
1N5624 General Instrument Short Form Data 1976 Scan PDF
1N5624 Harris Semiconductor 3 Amp, 200V - 800V Diodes Scan PDF
1N5624 Others Basic Transistor and Cross Reference Specification Scan PDF
1N5624 Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
1N5624 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N5624 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1N5624 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1N5624 Powerex Lead Mounted Rectifier Scan PDF
1N5624 Solid State 200 V, 3 A standard recovery rectifier Scan PDF

1N5624 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - Not Available

Abstract: No abstract text available
Text: / 1n5624.html 4/12/2010 American Microsemiconductor , AMS 1N5624 4.9875 R-200 PRV 3A FREE SHIPPING On Orders over 150 Page 1 of 1 Enter Your Part # , : 1N5624 1N5624 R-200 PRV 3A Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the , 3.99 Manufacturer Partnumber: List Price: Our Price: You Save: 1N5624 $ 4.99 Information Spec , Submit 1N5624 Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order


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PDF 1N5624 R-200 1N5624 com/1n5624
2013 - 1N5625

Abstract: 1N5625 v
Text: 1N5624 1N5625 1N5626 1N5627 w w w. c e n t r a l s e m i . c o m SILICON GLASS PASSIVATED RECTIFIERS 5.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5624 series types are silicon rectifiers mounted in a hermetically sealed, glass passivated package, designed for general , MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 1N5624 1N5625 1N5626 1N5627 UNITS Peak Repetitive , VR=Rated VRRM IF=3.0A MAX 5.0 1.0 UNITS A V R1 (9-April 2013) 1N5624 1N5625 1N5626 1N5627


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PDF 1N5624 1N5625 1N5626 1N5627 1N5625 1N5627 1N5625 v
2008 - 1N5625

Abstract: 1n5627
Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features · , ) TJ TSTG 150 - 65 to + 175 - 65 to + 200 1N5624 200 140 200 1N5625 400 280 400 3.0 125 100 1N5626 600 , -Jul-05 www.vishay.com 1 1N5624 thru 1N5627 Vishay Semiconductors Electrical Characteristics (TA = 25 °C unless , = 70 °C TA= 25 °C TA= 175 °C Symbols VF IR 300 CJ 40 1N5624 1N5625 1.0 0.95 5.0 200 1N5626 1N5627 Units , Symbols RJA, RJL 1N5624 1N5625 20 10 1N5626 1N5627 Units °C/W Ratings and Characteristics Curves (TA =


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PDF 1N5624 1N5627 MIL-S-19500 25any 18-Jul-08 1N5625 1n5627
1N5624

Abstract: diode 1n5624 1N5625 1N5625 v 1N5626 DIODE 1N5625 V 1N5627
Text: HARRIS SENICON]) SECTOR böE D H 43GS271 D0503D5 123 HHAS m harris 1N5624 , 1N5625 <à , Soldering: 350° C/1 Os/O.375 In. (9.5mm) Lead Length Description The 1N5624 , 1N5625, 1N5626, and 1N5627 , Single Phase, 60Hz, Half-Wave Resistive or Inductive Loads (Note 1 ) 1N5624 1N5625 1N5626 1N5627 UNITS , SEtlICOND SECTOR bflE D ■M302271 GG5G3Db GbT Specifications 1N5624 , 1N5625, 1N5626, 1N5627 I HAS , . 2. 100|iA for 1N5626 and 1N5627. 3. 200(iA for 1N5624 and 1N5625. Typical Performance Curves < z


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PDF 43GS271 D0503D5 1N5624, 1N5625 1N5626, 1N5627 MIL-STD-19500 1N5625, 1N5624 diode 1n5624 1N5625 1N5625 v 1N5626 DIODE 1N5625 V 1N5627
2005 - 1N5625

Abstract: 1N5624
Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features · , ) TJ TSTG 150 - 65 to + 175 - 65 to + 200 1N5624 200 140 200 1N5625 400 280 400 3.0 125 100 1N5626 600 , -Jul-05 www.vishay.com 1 1N5624 thru 1N5627 Vishay Semiconductors Electrical Characteristics (TA = 25 °C unless , = 70 °C TA= 25 °C TA= 175 °C Symbols VF IR 300 CJ 40 1N5624 1N5625 1.0 0.95 5.0 200 1N5626 1N5627 Units , Symbols RJA, RJL 1N5624 1N5625 20 10 1N5626 1N5627 Units °C/W Ratings and Characteristics Curves (TA =


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PDF 1N5624 1N5627 MIL-S-19500 08-Apr-05 1N5625
1999 - 1N5624

Abstract: 1N5625 1N5626 1N5627
Text: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier ted* aten Features P Case Style G3 · · · · Cavity-free glass passivated junction High temperature metallurgically bonded , 1N5624 1N5625 1N5626 1N5627 UNITS VRRM 200 400 600 800 V VRMS 140 , rated DC blocking voltage 1N5624 TA=25°C TA=175°C Typical junction capacitance at 4.0V, 1MHz , 1N5627 1.0 0.95 V 5.0 300 200 40 UNITS µA pF 10/1/99 1N5624 thru 1N5627


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PDF 1N5624 1N5627 MIL-S-19500 50mVp-p 1N5625 1N5626 1N5627
JANTX1N5627

Abstract: JAN1N5624 JANTX1N5624 Functional details of ic 4066 Ta650 1N5626 IN5624 650C 1N5627 1N5624
Text: =8.3msec (Max) 1/3/ 2/3/ Vdc V Adc Adc adc °C/Watt jusec 1N5624 200 200 3.5 2.5 125 18 5 1N5625 400 , (high altitude operation): 1N5624 , 1N5625, 1N5626 = 8mm Hg (100,000 ft.) 1N5627 = 33mm Hg ( 70,000 ft , : J5 or JX5 /Illustration shows marking fori 624 624 |typical 1N5624 device. J 3.5.2 Polarity - The , Subgroup 2 5 3 Forward Voltage 4011 DC Current lF-3.5 Adc 1N5624 vF 0 6 1.0 , 4016 DC method 1N5624 VR=200Vdc IR -• 1.0 /XAdc 1N5625 VR=400Vdc IR - 1.0 ¿¿Adc


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PDF MIL-S-19500/432 JAN1N5624 JAN1N5627 JANTX1N5624 JANTX1N5627 QPL-19500, Q013bl3 MIL-S-1950U/432 5961-F291) JANTX1N5627 Functional details of ic 4066 Ta650 1N5626 IN5624 650C 1N5627 1N5624
2004 - diode 1n5624

Abstract: No abstract text available
Text: Submit ¡ ¡ 1N5624 Availability Buy 1N5624 at our online store ! 1N5624 Information Cate gory » Diodes Class » Silicon Rectifiers Type » General -Purpose 1N5624 Specifications Milita ry


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PDF 1N5624 DO-41 diode 1n5624
2002 - diode 1n5624

Abstract: vishay 1N5625 1N5624 1N5625 1N5626 1N5627
Text: 1N5624 thru 1N5627 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G3 1.0 (25.4) MIN Rev. Voltage 200 to 800V Forward Current 3.0A ed* tFeatures aten P · · · · Cavity-free glass passivated junction High temperature , temperature unless otherwise specified. Symbol 1N5624 1N5625 1N5626 1N5627 Unit VRRM , Number 88523 11-Feb-02 www.vishay.com 1 1N5624 thru 1N5627 Vishay Semiconductors formerly


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PDF 1N5624 1N5627 MIL-S-19500 50mVp-p 11-Feb-02 diode 1n5624 vishay 1N5625 1N5625 1N5626 1N5627
2006 - diode 1n5624

Abstract: 1N5624 1N5625 1N5626 1N5627
Text: Certificate TH97/10561QM Certificate TW00/17276EM 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability Low reverse current , , Ta = 175 °C 1N5624 1N5625 1N5626 1N5627 UNIT VRRM VRMS VDC 200 140 200 , Certificate TW00/17276EM RATING AND CHARACTERISTIC CURVES ( 1N5624 ~ 1N5627 ) FIG.2 - MAXIMUM


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PDF TH97/10561QM TW00/17276EM 1N5624 1N5627 UL94V-O MIL-STD-202, 50mVp-p diode 1n5624 1N5625 1N5626 1N5627
2009 - DIODE 1N5625 V

Abstract: diode 1n5624 Sinterglass 1N5625 Specifications 1N5624 1N5625 1N5626 1N5627 vishay 1N5625
Text: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · , Weight: approx. 858 mg Parts Table Part Type differentiation Package 1N5624 VR = 200 V , otherwise specified Parameter Part Symbol Value Unit 1N5624 VR = VRRM 200 V , range Document Number 86063 Rev. 1.4, 08-Jul-05 www.vishay.com 1 1N5624 to 1N5627 Vishay , , 08-Jul-05 1N5624 to 1N5627 Vishay Semiconductors 300 PR ­ Reverse Power Dissipation ( mW


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PDF 1N5624 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 OD-64 1N5625 18-Jul-08 DIODE 1N5625 V diode 1n5624 Sinterglass 1N5625 Specifications 1N5625 1N5626 1N5627 vishay 1N5625
2002 - diode 1n5624

Abstract: 1n5624 1N5625 diode
Text: VISHAY 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features , ) Parts Table Part 1N5624 1N5625 1N5626 1N5627 Type differentiation VR = 200 V @ IFAV = 3 A VR = 400 V @ , reverse voltage Test condition Sub type 1N5624 1N5625 1N5626 1N5627 Peak forward surge current Repetitive , -Oct-00 www.vishay.com 1 1N5624 to 1N5627 Vishay Semiconductors Parameter Pulse energy in avalanche mode, non , 1N5624 to 1N5627 Vishay Semiconductors I FAV ­ Average Forward Current ( A ) 3.0 2.5 2.0 1.5 1.0


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PDF 1N5624 1N5627 MILSTD-750, 1N5625 1N5626 1N5627 D-74025 09-Oct-00 diode 1n5624 1N5625 diode
2005 - Not Available

Abstract: No abstract text available
Text: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features · · · , Parts Table Part 1N5624 1N5625 1N5626 1N5627 Type differentiation VR = 200 V; IFAV = 3 A VR = 400 V , peak reverse voltage Test condition see electrical characteristics Part 1N5624 1N5625 1N5626 1N5627 , Document Number 86063 Rev. 1.4, 08-Jul-05 www.vishay.com 1 1N5624 to 1N5627 Vishay Semiconductors , . Forward Voltage www.vishay.com 2 Document Number 86063 Rev. 1.4, 08-Jul-05 1N5624 to 1N5627


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PDF 1N5624 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5625 1N5626 1N5627
2006 - diode 1n5624

Abstract: 1N5624 1N5625 1N5626 1N5627
Text: Certificate TH97/10561QM 1N5624 - 1N5627 Certificate TW00/17276EM GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes DO - 201AD FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability Low reverse current , Forward Voltage at I F = 3.0 A , Ta = 175 °C 1N5624 1N5625 1N5626 1N5627 UNIT VRRM , CURVES ( 1N5624 ~ 1N5627 ) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 3.0 60


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PDF TH97/10561QM 1N5624 1N5627 TW00/17276EM 201AD DO-201AD UL94V-O MIL-STD-202, 50mVp-p diode 1n5624 1N5625 1N5626 1N5627
diode 1n5624

Abstract: 1N5624 with forward current 5 amp 1N5624 1N5625 1N5626 1N5627
Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA , otherwise specified. SYMBOLS 1N5624 1N5625 1N5626 1N5627 UNITS VRRM 200 400 , RATINGS AND CHARACTERISTIC CURVES 1N5624 THRU 1N5627 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC


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PDF 1N5624 1N5627 MIL-S-19500 50mVp-p diode 1n5624 1N5624 with forward current 5 amp 1N5625 1N5626 1N5627
2011 - 1N5625

Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
Text: 1N5624 , 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode , Rectification diode, general purpose PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 TYPE DIFFERENTIATION VR = , = 175 °C I(BR)R = 1 A, Tj = 175 °C TEST CONDITION PART 1N5624 See electrical characteristics 1N5625 , , DiodesAsia@vishay.com, DiodesEurope@vishay.com 1N5624 , 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard , Document Number: 86063 Rev. 1.5, 21-Sep-10 1N5624 , 1N5625, 1N5626, 1N5627 Standard Avalanche


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PDF 1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
1997 - 1N5624

Abstract: 1N5625 1N5626 1N5627
Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 (25.4) MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA , otherwise specified. SYMBOLS *Maximum repetitive peak reverse voltage 1N5624 1N5625 1N5626 , CURVES 1N5624 THRU 1N5627 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 100 10 1


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PDF 1N5624 1N5627 MIL-S-19500 inches10 50mVp-p 1N5625 1N5626 1N5627
JANTX1N5624

Abstract: 1N5B26
Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N5624 THRU 1N5627 PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 3.5 Amperes_ FEATURES High temperature metallurgically bonded Hermetically sealed package Glass passivated cavityfree junction 3.5 ampere operation at T , ,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS 1N5624 1N5625 1N5B26 , CHARACTERISTIC CURVES JAN AND JANTX 1N5624 THRU 1N5627 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE


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PDF 1N5624 1N5627 MIL-STD-202, JANTX1N5624 1N5B26
2000 - 1N5625 PIV

Abstract: 1N5060 1N4248 BYW55 1n5062 1N5061 1N5059 byw55 byw56 1N5625 1N4247
Text: G4A G4B G4D G4G G4J G4K G4M 1N5624 1N5625 1N5626 1N5627 G3A G3B G3D G3G G3J G3K G3M 1N5624 1N5625 1N5626 1N5627 40 CrossReference 1N5059 1N5060 1N5061 1N5062 1N4245 1N4246 , G3G G3J G3K 1N5624 1N5625 1N5626 1N5627 - Max. Average Rectified Current Peak Inverse


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PDF -65oC 1N4245 1N4246 1N4247 1N4248 1N4249 1N5059 1N5060 1N5061 1N5062 1N5625 PIV 1N5060 1N4248 BYW55 1n5062 1N5061 1N5059 byw55 byw56 1N5625 1N4247
Not Available

Abstract: No abstract text available
Text: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High , , Ta = 25 °C Maximum Forward Voltage at I F = 3.0 A , Ta = 175 °C 1N5624 1N5625 1N5626 , 0113686 SGS TH07/1033 RATING AND CHARACTERISTIC CURVES ( 1N5624 ~ 1N5627 ) FIG.2 - MAXIMUM


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PDF TH09/2479 TH97/2478 TH07/1033 1N5624 1N5627 UL94V-O MIL-STD-202, 50mVp-p
1N5625

Abstract: 1N5624 1N5626 1N5627 CPR3-100 1N5625 v
Text: Central Semiconductor corp. Central Semiconductor corp. 145 Adams Avenue Hauppauge, New York 1 1 788 ♦I 1N562A THRU 1N5627 GLASS PASSIVATED RECTIFIER 5.0 AMPS, 200-800 VOLTS GPR-3A CASE DESCRIPTION The_CENTRAL SEMICONDUCTOR 1N5624 Series types are Silicon Rectifiers mounted in a hermetically sealed, glass passivated package designed for general applications where high re)iabi1ity is des i red. MAXIMUM RATINGS (Ta=25°C unless otherwise noted) SYMBOL 1N5624 1N5625 1N5626 1N5627 CPR3-100 UNIT Peak


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PDF 1N562A 1N5627 1N5624 1N5625 1N5626 1N5627 CPR3-100 0N5625 1N5625 v
2015 - Not Available

Abstract: No abstract text available
Text: 1N5624 , 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche , -64 1N5627 1N5627 PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 ABSOLUTE MAXIMUM RATINGS (Tamb = , electrical characteristics 1N5624 1N5625 1N5626 1N5627 VR = VRRM VR = VRRM VR = VRRM VR = VRRM , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624 , 1N5625, 1N5626, 1N5627 www.vishay.com Vishay , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624 , 1N5625, 1N5626, 1N5627


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PDF 1N5624, 1N5625, 1N5626, 1N5627 OD-64 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Not Available

Abstract: No abstract text available
Text: 1N5624 , 1N5625, 1N5626, 1N5627 www.vishay.com Vishay Semiconductors Standard Avalanche , SOD-64 SOD-64 SOD-64 SOD-64 1N5627 1N5627 PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 , SYMBOL VALUE UNIT See electrical characteristics 1N5624 1N5625 1N5626 1N5627 VR = VRRM , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624 , 1N5625 , DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N5624 , 1N5625


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PDF 1N5624, 1N5625, 1N5626, 1N5627 OD-64 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
2012 - DIODE 1N5625 V

Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
Text: 1N5624 , 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode , Rectification diode, general purpose PARTS TABLE PART 1N5624 1N5625 1N5626 1N5627 TYPE DIFFERENTIATION VR = , = 175 °C I(BR)R = 1 A, Tj = 175 °C TEST CONDITION PART 1N5624 See electrical characteristics 1N5625 , , DiodesAsia@vishay.com, DiodesEurope@vishay.com 1N5624 , 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard , Document Number: 86063 Rev. 1.5, 21-Sep-10 1N5624 , 1N5625, 1N5626, 1N5627 Standard Avalanche


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PDF 1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 DIODE 1N5625 V vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 Specifications 1N5626
1N562S

Abstract: No abstract text available
Text: 1N5624 THRU 1N5627 Voltage - 200 to 800 Volts GLASS PASSIVATED JUNCTION RECTIFIER C u rre n t - 3.0 Amperes FEATURES Glass passivated cavity-free junction High temperature metallurgical^ bonded con structed rectifiers Hermetically sealed package Capable of meeting environmental standards of , capacitive load, derate current by 20%. SYMBOLS 1N5624 1N562S 1N5626 1N5627 HOTS ` Maximum Recurrent Peak , 308 RATINGS AND CHARACTERISTIC CURVES 1N5624 THRU 1N5627 FIG. 2 - MAXIMUM NON-REPETITIVE PEAK


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PDF 1N5624 1N5627 MIL-S-19500 MIL-STD-750, 1N562S
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