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1N5616US+JANS datasheet (1)

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1N5616US+JANS 1N5616US+JANS ECAD Model Defense Electronics Supply Center 1.0A Iout, 400V Vrrm Fast Recovery Rectifier Scan PDF

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1N5620 die

Abstract: diode 1N4383 1N5616UL JANH 1N5620UL 1N5620 1N4585 1N5618 1N5616 1N5614UL
Text: , 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS , JANHC, AND JANKC This specification is , Screening ( JANS , JANTX. and JANTXV levels). Screening shall be in accordance with table II of MIL-S , -19500) Measurement JANS level JANTX and JANTXV levels V Thermal impedance (see 4.3.3) Thermal impedance (see , testing in table IVa ( JANS ) and table IVb (JANTX and JANTXV) of MIL-S-19500 and as follows. Electrical , 2 and as specified in table II herein. ZgJX shall be performed after JANS group B4 only. See


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PDF MIL-S-19500/427E MIL-S-19500/427D 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620 die diode 1N4383 1N5616UL JANH 1N5620UL 1N5620 1N4585 1N5618 1N5616 1N5614UL
2007 - 1N5614US

Abstract: 1N5620US 1N5614 1N5616US 1N5618US 1N5622 1N5622US EIA-481-B 1N5616US JANTX
Text: " Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per


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PDF 1N5614US 1N5622US 1N5614 1N5622 MILPRF-19500/427 1N5622) 1N5614US 1N5620US 1N5616US 1N5618US 1N5622US EIA-481-B 1N5616US JANTX
2009 - 1N5614US

Abstract: 1N5614 1N5616US 1N5618US 1N5620US 1N5622 1N5622US EIA-481-B Microsemi micronote series 050
Text: " Metallurgical bonds Working Peak Reverse Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per


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PDF 1N5614US 1N5622US 1N5614 1N5622 MILPRF-19500/427 1N5622) 1N5614US SA7-45 1N5616US 1N5618US 1N5620US 1N5622US EIA-481-B Microsemi micronote series 050
2004 - 1N5622 JANTXV

Abstract: No abstract text available
Text: Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427 Axial-leaded equivalents also


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PDF 1N5614US 1N5622US MIL-PRF-19500/427 1N5614 1N5622) 1N5614US 1N5622US 1N5622 JANTXV
2007 - Not Available

Abstract: No abstract text available
Text: Voltage 200 to 1000 Volts. JAN, JANTX, JANTXV, and JANS available per MILPRF-19500/427 Axial-leaded


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PDF 1N5614US 1N5622US MILPRF-19500/427 1N5614 1N5622) 1N5614US
2009 - Not Available

Abstract: No abstract text available
Text: , JANTXV, and JANS available per MILPRF-19500/427 Axial-leaded equivalents also available (see separate


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PDF 1N5614US 1N5622US 1N5614 1N5622 MILPRF-19500/427 1N5614US SA7-45
diode 1N4383

Abstract: 1N5618US JANTXV JANTX, JX, JAN 1N4384 1N5616US 1N5614US 1N5618US 1N5620 1N5620US 1N5622
Text: , 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS , JANHC, AND JANKC This specification is approved for use by , herein. * 4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with , acceptable. JANS level Screening (see appendix E, table E-IV of MIL-PRF-19500) JANTXV and JANTX , of MIL-PRF-19500. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows , conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIa ( JANS


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PDF MIL-PRF-19500/427M MIL-PRF-19500/427L 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, diode 1N4383 1N5618US JANTXV JANTX, JX, JAN 1N4384 1N5616US 1N5614US 1N5618US 1N5620 1N5620US 1N5622
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1N5616US Voltage400 Current500n Current25u StyleDO-213AB rent25u
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1N5616US Voltage400 Current500n Current25u StyleDO-213AB
1N5616US

Abstract: No abstract text available
Text: No file text available


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PDF 1N5616US 1N5616US
1N5620U

Abstract: 1N5620US 1N5618US 1N5616US 1N5615US 1N5614US 1N5554US 1N5553US 1N5552US 1N5551US
Text: No file text available


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PDF 1N5614US 1N5616US 1N5618US 1N5620US 1N5622US 1N5550US 1N6631US SSM340S3 SSM160HE, SSM180HE, 1N5620U 1N5615US 1N5554US 1N5553US 1N5552US 1N5551US
1N5619 JTX

Abstract: JTX 1N5811 JTX 1N6629 M19500 1N4245 JTX
Text: No file text available


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PDF MIL-S-19500 1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 1N5619 JTX JTX 1N5811 JTX 1N6629 M19500 1N4245 JTX
M19500

Abstract: SPD-25 1N3613 1N5619 JTX spb25 jan N5811US
Text: No file text available


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PDF MIL-S-19500 1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 M19500 SPD-25 1N5619 JTX spb25 jan N5811US
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1N5614US 1N5616US 1N5618US 1N5620US 1N5622US 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US
1N5811

Abstract: No abstract text available
Text: No file text available


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PDF 1N5614US 1N5616US 1N5618US 1N5620US 1N5622US 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US 1N5811
1999 - 1N3595US

Abstract: 1N5820US 1N6642US microsemi 1N5617US 1N5804US 1N5806US Microsemi 1N6638US 1N6639US 1N6642US
Text: No file text available


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PDF 1N3595US 1N6639US 1N6643US 1N5616US 1N5820US 1N5806US 1N6638US 1N6642US 1N5815US 1N5617US 1N3595US 1N5820US 1N6642US microsemi 1N5617US 1N5804US 1N5806US Microsemi 1N6638US 1N6639US 1N6642US
melf-b

Abstract: No abstract text available
Text: No file text available


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PDF MIL-S-19500 SSM340S3 SSM160HE, SSM180HE, SSM1100HE melf-b
SHD5183

Abstract: SHD5183A SHD5183B SHD5193 SHD5303 SHD5181 SHD5181A SHD5181B SHD5301
Text: No file text available


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PDF 1N3611. 1N3612. 1N3613. 1N3957 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 SHD5183 SHD5183A SHD5183B SHD5193 SHD5303 SHD5181 SHD5181A SHD5181B SHD5301
JANTX1N5618

Abstract: JANTX1N5616 1N4004 GS1G jantxV1n4247 JANTX1N4246 JANS1N5618 JAN1N3613 1-N3612
Text: No file text available


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PDF DO-41 DL-41 D0-214AC JANTX1N5618 JANTX1N5616 1N4004 GS1G jantxV1n4247 JANTX1N4246 JANS1N5618 JAN1N3613 1-N3612
1999 - 1N5811

Abstract: No abstract text available
Text: Fall 1998/Winter 1999 JANS Lite A Lower Cost Alternative to JANS By Harry Spence Corporate Director Quality Assurance For more than 10 years, Microsemi has been a supplier of JANS diodes for , specifications for processing which we have dubbed " JANS Lite" . The specifications employed by the , . Our limited data on the reliability and performance of JANS Lite processed devices indicates that it is very close to that of the performance of a fully processed JANS . One of the reasons that our


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PDF 1998/Winter JC-13. 1N5811
2012 - JANS2N3501L

Abstract: 2N3501L 3N3499L
Text: JANS 2N3498L thru JANS 2N3501L RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DESCRIPTION This family of JANS 2N3498L through JANS 2N3501L epitaxial, planar , high-reliability applications. (leaded) JANS 2N3498 ­ 2N3501 UB package (surface mount) JANS 2N3501UB , to +200 T4-LDS-0056-1, Rev. 1 (121220) ©2012 Microsemi Corporation Page 1 of 8 JANS 2N3498L thru JANS 2N3501L MECHANICAL and PACKAGING · · · · · CASE: Hermetically sealed, kovar base


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PDF 2N3498L 2N3501L MIL-PRF-19500/366 T4-LDS-0056-1, JANS2N3501L 3N3499L
2010 - Semtech alpac

Abstract: 4011 JANS1N5550 4011 equivalent JANS1N5618 JANS1N5614 JANS1N5554 JANS1N5420 JANS1N5415 JANS1N5623
Text: JANS Certified and Space level screening (HR500S) Hi-Reliability Devices Semtech Corporation , configurations: · Military Qualified Diodes (JAN, JANTX, JANTXV, JANS ) · Source Controlled Devices (SCD) · Custom S-Level Processing · Semtech HR500S Space Level Flow ( JANS equivalent) Semtech Factory , , Camarillo, CA 93012 JANS Certified and Space level screening (HR500S) JANS - Qualified Diodes Available Now! These products are DSCC qualified JANS product for Space/Critical programs. MIL-PRF


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PDF HR500S) SpaceJANS-PDA10 Semtech alpac 4011 JANS1N5550 4011 equivalent JANS1N5618 JANS1N5614 JANS1N5554 JANS1N5420 JANS1N5415 JANS1N5623
2012 - SOC2222ASW

Abstract: No abstract text available
Text: BVCEO min IC (max) hFE at 10 V - 150 mA ESCC 40 V 0.8 A 100 JANS 50 V 3 1 2 3 TO-18 3 4 1 2 1 2 Linear gain characteristics Hermetic packages ESCC and JANS qualified European , ) Qualification JANS JANSR2N2222A SOC2222AUB LCC-3UB SOC2222AUBxxSW SOC2222A ESCC SOC2222AxxSW 2N2222AHR TO , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 2.3 2.4 JANS electrical , Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) for JANS devices Collector-emitter voltage (IB


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PDF 2N2222AHR 2N2222AHR MIL-PRF19500 SOC2222ASW
2012 - JANSR2N2222A

Abstract: J2N2222A 520100204 JANS2N2222AUB jansr2n2222aub J-2N2222A SOC2222AUB12SW J2N2222 soc2222 JANSR2N2222AUBG
Text: BVCEO min IC (max) hFE at 10 V - 150 mA ESCC 40 V 0.8 A 100 JANS 50 V 3 1 2 3 TO-18 3 4 1 2 1 2 Linear gain characteristics Hermetic packages ESCC and JANS qualified European , ) Qualification JANS JANSR2N2222A SOC2222AUB LCC-3UB SOC2222AUBxxSW SOC2222A ESCC SOC2222AxxSW 2N2222AHR TO , . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 2.3 2.4 JANS electrical , Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) for JANS devices Collector-emitter voltage (IB


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PDF 2N2222AHR 2N2222AHR MIL-PRF19500 JANSR2N2222A J2N2222A 520100204 JANS2N2222AUB jansr2n2222aub J-2N2222A SOC2222AUB12SW J2N2222 soc2222 JANSR2N2222AUBG
2012 - JANS2N5154

Abstract: 2N5154U3
Text: JANS 2N5152L and JANS 2N5154L RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per , , JANSD, JANSP, JANSL, JANSR, JANSF FEATURES · · JEDEC registered 2N5152 and 2N5154. JANS RHA , . High-reliability applications. TO-39 Package (leaded) JANS _2N5152 & JANS _2N5154 U3 Package (surface mount) JANS _2N5152U3 & JANS _2N5154U3 MAXIMUM RATINGS Parameters/Test Conditions Junction and Storage , (120716) ©2012 Microsemi Corporation Page 1 of 8 JANS 2N5152L and JANS 2N5154L MECHANICAL and


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PDF 2N5152L 2N5154L MIL-PRF-19500/544 2N5154L 2N5152 2N5154. MIL-PRF-19500/544. T4-LDS-0100-1, JANS2N5154 2N5154U3
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