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1N5225B-TAP Vishay Semiconductors Zener Diode, 3V V(Z), 5%, 0.5W,
1N5225B-TP Micro Commercial Components Zener Diode, 3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
1N5225B-TR Vishay Semiconductors Zener Diode, 3V V(Z), 5%, 0.5W,
1N5225B (DO-35) Microsemi Corporation ZENER VOLTAGE REGULATOR DIODE DO-35 SD
1N5225BTA SMC Diode Solutions DIODE ZENER 3V 500MW DO35
1N5225B BK Central Semiconductor Corp DIODE ZENER 3V 500MW DO35
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1N5225B-TP Micro Commercial Components Newark element14 1,626 $0.15 $0.02
1N5225B-TP Micro Commercial Components element14 Asia-Pacific 2,505 $0.19 $0.02
1N5225B-TP Micro Commercial Components Farnell element14 1,626 £0.13 £0.03

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1N5225B-TP datasheet (1)

Part Manufacturer Description Type PDF
1N5225B-TP Micro Commercial Components Diodes - Zener - Single, Discrete Semiconductor Products, DIODE ZENER 3V 500MW DO35 Original PDF

1N5225B-TP Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N5235

Abstract: 1N5225B 1N52 1N5245 1N5267B 1N5230B 1N5229B 1N5228B 1N5227B 1N5226B
Text: reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge Ptot total power dissipation , tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 - 40 W tp = 8.3 ms , 6.0 6.0 6.0 6.0 6.0 6.0 MAX. NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = , ) tp = 100 µs; Tamb = 25 °C 2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B , tp = T 1 10-1 1 102 10 103 104 tp T tp (ms) 105 Fig.2 Thermal


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PDF M3D176 1N5225B 1N5267B DO-35) MAM23 1N5235 1N52 1N5245 1N5267B 1N5230B 1N5229B 1N5228B 1N5227B 1N5226B
1N5225B

Abstract: "Voltage Regulator Diodes" 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5267B MAM239
Text: reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge mA Ptot total power , 500 mW PZSM non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 - 40 W tp = 8.3 ms; square wave; Tj 55 °C prior to , (µA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. VR (V , CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. 22 600 +0.087 5.6 60 0.1 17.0


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PDF M3D176 1N5225B 1N5267B DO-35) MAM23 "Voltage Regulator Diodes" 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 1N5267B MAM239
Not Available

Abstract: No abstract text available
Text: 50 °C; lead length max.; 250 tp = 100 ps; square wave; Tj = 25 °C prior to surge Ptot , power dissipation tp = 100 ps; square wave; Tj = 25 °C prior to surge; see Fig.3 tp = 8.3 ms , VOLTAGE Ir (h A) NON-REPETfflVE PEAK REVERSE CURRENT >z sm (A) tp = 100 JIS; Tamb = 25 MAX


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PDF 1N5225B 1N5267B DO-35) -T4MAM239
1999 - "Voltage Regulator Diodes"

Abstract: 1N5231B 1N5230B 1N5229B 1N5228B 1N5227B 1N5226B 1N5225B 1N5250B 20 1N5267B
Text: IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge , tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.3 - 40 W tp = 8.3 ms , REVERSE CURRENT at REVERSE VOLTAGE IR (µA) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 , (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) tp = 100 µs; Tamb = 25 °C MAX. 22 600 , 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 0.001 10 tp = T 1 10-1 1


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PDF M3D176 1N5225B 1N5267B DO-35) MAM239 "Voltage Regulator Diodes" 1N5231B 1N5230B 1N5229B 1N5228B 1N5227B 1N5226B 1N5250B 20 1N5267B
1n52258

Abstract: IN5259B LN5261 1N5245B 1N5244B 1N5243B 1N5242B 1N5241B 1N5240B 1N5225B
Text: Tj = 55 °C; tp = 8,3 ms, square wave pZSM max. 10 W Junction temperature Ti -65 to + 200 OC , Non-repetitive peak reverse power dissipation Tj = 55 °C; tp = 8,3 msr square wave Storage temperature Junction


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PDF 1N5225B 1N5267B DO-35 DO-35 OD-27) 1N5225B 1N5242B 1N5243B 1n52258 IN5259B LN5261 1N5245B 1N5244B 1N5241B 1N5240B
Not Available

Abstract: No abstract text available
Text: = 55 °C ; tp = 8,3 ms, square wave pZSM max. W orking voltage tolerance 3,0 to 75 V  , power dissipation Tj = 55 °C ; tp = 8,3 ms, square wave pZSM Storage temperature max. 10 W


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PDF 1N5225B 1N5267B DO-35 DO-35 OD-27) 1N5265B 1N5266B 1N5225B 1N5242B
1N52568

Abstract: 1N52578 N5225B "Voltage Regulator Diodes" 1n52258 1N52618 1N5225B 1N5267B H-111
Text: current - 250 mA !zsm non-repetitive peak reverse current tp = 100 jxs; square wave; Tj = 25 °C prior , - 400 mW Lead length 8 mm; note 2 - 500 mW PzSM non-repetitive peak reverse power dissipation tp = 100 us; square wave; Tj = 25 °C prior to surge; see Fig.3 — 40 W tp = 8.3 ms; square wave


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PDF 1N5225B 1N5267B 711Qfl5b 1N52568 1N52578 N5225B "Voltage Regulator Diodes" 1n52258 1N52618 1N5267B H-111
2006 - 1N5264B

Abstract: 1N5265B 1N5224B
Text: + 3% SUFFIX "B" FOR + 5% SUFFIX "C" FOR + 10% SUFFIX "D" FOR + 20% * MEASURED WITH PULSES Tp =40 mSec


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PDF 1N5221B 1N5267B 500mW 2002/95/EC DO-35 MIL-STD-750, DO-35 Te5263B 1N5264B 1N5265B 1N5224B
2006 - Not Available

Abstract: No abstract text available
Text: Tp =40 mSec. STAD-NOV.08.2006 ZENERDIODENUMBERINGSYSTEM: 1N5225B B 1* 2* 1* TYPE NO. 2* TOLERANCE


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PDF 1N5221B 1N5267B 500mW DO-35 MIL-STD-750, DO-35 5263B 1N5264B 1N5265B 1N5266B
bzv90c

Abstract: 1N4749A5 ZENER DIODES BZV90 C DIODE BZX84b bzx84b DO-34 ZENER BZV85 zener diode catalogue BZX55 Philips
Text: PMBZ5257B I 3.3 to 33 PMLL5225B to \ PMLL5267B I 3.0 to 75 1 ) at tp = 100 us 2 1 Tam b 5 2,3 or 5 5 1,2 , 3) at tp = 8.3 ms 4-57


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PDF DO-35 DO-34 DO-41 OD80C OD110 OT223 BZV371 BZX79A BZX79B BZX79F bzv90c 1N4749A5 ZENER DIODES BZV90 C DIODE BZX84b bzx84b DO-34 ZENER BZV85 zener diode catalogue BZX55 Philips
2006 - 1N5224B

Abstract: 1N5221B 1N5222B 1N5223B 1N5225B 1N5226B 1N5267B
Text: PULSES Tp =40 mSec. STAD-NOV.08.2006 ZENERDIODENUMBERINGSYSTEM: 1N5225B B 1* 2* 1* TYPE NO. 2


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PDF 1N5221B 1N5267B 500mW 2002/95/EC DO-35 MIL-STD-750, DO-35 1N5225B 1N5225B 1N5224B 1N5222B 1N5223B 1N5226B 1N5267B
2006 - 1N5224B

Abstract: No abstract text available
Text: + 3% SUFFIX "B" FOR + 5% SUFFIX "C" FOR + 10% SUFFIX "D" FOR + 20% * MEASURED WITH PULSES Tp =40 mSec


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PDF 1N5221B 1N5267B 500mW 2002/95/EC DO-35 MIL-STD-750, DO-35 5263B 1N5264B 1N5265B 1N5224B
2013 - Not Available

Abstract: No abstract text available
Text: “D” FOR + 20% * MEASURED WITH PULSES Tp =40 mSec. May 3,2013-REV.03 ZENERDIODENUMBERINGSYSTEM


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PDF 1N5221B 1N5266B 500mW 2011/65/EU DO-35 MIL-STD-750, DO-35 2013-REV
2006 - Not Available

Abstract: No abstract text available
Text: + 3% SUFFIX "B" FOR + 5% SUFFIX "C" FOR + 10% SUFFIX "D" FOR + 20% * MEASURED WITH PULSES Tp =40 mSec


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PDF 1N5221B 1N5267B 500mW 2002/95/EC DO-35 MIL-STD-750, DO-35
Not Available

Abstract: No abstract text available
Text: % SUFFIX “C” FOR + 10% SUFFIX “D” FOR + 20% * MEASURED WITH PULSES Tp =40 mSec. STAD-NOV


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PDF 1N5221B 1N5267B 500mW 2002/95/EC DO-35 MIL-STD-750, DO-35
2013 - Not Available

Abstract: No abstract text available
Text: “D” FOR + 20% * MEASURED WITH PULSES Tp =40 mSec. December 16,2013


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PDF 1N5221B 1N5266B 500mW 2011/65/EU DO-35 MIL-STD-750, DO-35 2013-REV
1NS246B

Abstract: No abstract text available
Text: No file text available


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PDF DO-35 1N5225B 1N5282B DO-213AA 1N5225B N5225B 1NS246B
2011 - Not Available

Abstract: No abstract text available
Text: 2) Tested with pulese tp =40ms ±0.03 ±0.03 +0.038 +0.038 +0.045 +0.05 +0.058 +0.062


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PDF 500mW DO-35 200mA 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B
2013 - Motorola

Abstract: tny 178 tny 223 ic tny 176 tny 66 1N5227B pny 264 tny 175 TNY267 TNY+176+PN+EQUIVALENT
Text: No file text available


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PDF UL1950, IEC950, CSA-950 E162344 IEC950 265Vac, PNY-05015 TNY-255 Motorola tny 178 tny 223 ic tny 176 tny 66 1N5227B pny 264 tny 175 TNY267 TNY+176+PN+EQUIVALENT
1N5282B

Abstract: zener db3 Na3 smd DO-213AA 1N5230B 1N5229B 1N5228B 1N5227B 1N5226B 1N5225B
Text: No file text available


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PDF 1N5225B 1N5282B DO-35 LL-34500 1N5275B 1N5276B 1N5277B 1N5278B 1N5282B zener db3 Na3 smd DO-213AA 1N5230B 1N5229B 1N5228B 1N5227B 1N5226B 1N5225B
2007 - 1N5225B

Abstract: ZENER 1N5 1n5244b FSC 1N5221B
Text: No file text available


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PDF 1N5221B 1N5263B 1N5263B DO-35 1N5222B 1N5223B 1N5224B 1N5225B ZENER 1N5 1n5244b FSC
2005 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1N5225B 1N5267B DO-204AH DO-35 500mW ZMM5225 ZMM5267, OT-23 MMBZ5265 MMBZ5267
2008 - equivalent components of Zener diode 1N5229B

Abstract: zener diode 1N5229B specifications zener diode 1n5229b zener diode cross reference zener voltage for diode 1N5231B zener diode cross reference 3.9 245 zener List of Zener diode equivalent of zener diode 1N5229B zener diode 1N5221B
Text: tP TP Ramp-up TL tL Temperature T smax T smin TS ts Preheat 25 Ramp-down , Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature , /+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature( tP ) 10~30sec


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PDF 1N5221B 1N5267B MIL-STD-750D METHOD-1051 125oC METHOD-1056 METHOD-4066-2 1000hrs. equivalent components of Zener diode 1N5229B zener diode 1N5229B specifications zener diode 1n5229b zener diode cross reference zener voltage for diode 1N5231B zener diode cross reference 3.9 245 zener List of Zener diode equivalent of zener diode 1N5229B zener diode 1N5221B
2009 - 1N5256B zener

Abstract: SOD 23 ZMM5267 ZMM5225 MMSZ5267 MMSZ5225 MMBZ5267 MMBZ5265 DO-204AH 1N5267B
Text: No file text available


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PDF 1N5225B 1N5267B 500mW DO-204AH DO-35 ZMM5225 ZMM5267, OT-23 MMBZ5265 MMBZ5267 1N5256B zener SOD 23 ZMM5267 ZMM5225 MMSZ5267 MMSZ5225 MMBZ5265 DO-204AH 1N5267B
zener diodes color codes

Abstract: 1N5221B 1N5267B DO35 MMBZ5225 MMBZ5267 MMSZ5225 MMSZ5267
Text: Zthp - Thermal Resistance for Pulse Cond. (KW) Vishay Semiconductors 1000 tP /T = 0.5 100 tP /T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP /T = 0.01 tP /T = 0.1 tP /T = 0.02 tP /T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 95 9603 101 102 tP - Pulse Length (ms) Figure 11. Thermal Response Package Dimensions in


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PDF 1N5221B 1N5267B TZM5221 TZM5267, MMBZ5225 MMBZ5267 OD123 MMSZ5225 MMSZ5267 2002/95/EC zener diodes color codes 1N5267B DO35 MMBZ5225 MMSZ5225 MMSZ5267
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