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Microchip Technology Inc
1N5194JANTX Diode Switching 70V 0.2A 2-Pin DO-35 Bag - Bag (Alt: JANTX1N5194) 1N5194JANTX ECAD Model
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Avnet 1N5194JANTX Bag 0 100 - - $42.59 $37.99 $37.99 Buy Now
Microchip Technology Inc
1N5194JANTXV Diode Switching 70V 0.2A 2-Pin DO-35 Bag - Bag (Alt: JANTXV1N5194) 1N5194JANTXV ECAD Model
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Avnet 1N5194JANTXV Bag 0 100 - - - - - Get Quote

1N5194+JANTX datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
1N5194+JANTX 1N5194+JANTX ECAD Model Defense Electronics Supply Center 200mA Iout, 80V Vrrm General Purpose Silicon Rectifier Scan PDF

1N5194+JANTX Datasheets Context Search

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sol 4011 be

Abstract: 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195 1N5196
Text: , 1N5196 JAN, JANTX , JANTXV, AND JANS This amendment forms a part of Military Specification MIL-S , , JANTX , JANTXV, AND JANS -T-Oi -CR MIL-S-19500/118D 11 AUGUST 1986 SUPERSEDING- MIL-S-19500/11ÖC 16 , , JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-S-19500 (table II), and as , II I of MIL-S-19500) 1 I JANS level 1 1 1 JANTX and JANTXV levels 1 1 1 9 1 1 1 Iri and VF1 1 1 1 , specified for subgroup testing in table IVa (JANS) and table IVb (JAN, JANTX , and JANTXV) of MIL-S


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PDF MIL-S-19500/118D 1N483B, 1N485B, 1N486B, 1N5194, 1N5195, 1N5196 MIL-S-19500/llfiD sol 4011 be 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195
1N483B

Abstract: 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR
Text: , 1N5196UR, AND 1N5196US, JAN, JANTX , AND JANTXV This specification is approved for use by all Departments , , JANTX , and JANTXV can be abbreviated as J, JX, and JV, respectively. The part number may be reduced to , lot date code for all levels. The prefixes JAN, JANTX ,or JANTXV may be abbreviated as J, JX, or JV , qualification. 6 MIL-PRF-19500/118J w/AMENDMENT 1 4.3 Screening (JANTXV, JANTX , and JAN levels). , (2) 11 12 (3) (4) 13 JANTXV and JANTX level Thermal impedance (see 4.3.2) Not required Method


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PDF MIL-PRF-19500/118J 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR, 1N483B 1N485B 1N486B 1N5194 1N5194UR 1N5195 1N5195UR
2007 - Not Available

Abstract: No abstract text available
Text: , JAN, JANTX , AND JANTXV This specification is approved for use by all Departments and Agencies of the , , JANTX , and JANTXV can be abbreviated as J, JX, and JV, respectively. The part number may be reduced to , qualification. 6 MIL-PRF-19500/118H * 4.3 Screening (JANTXV, JANTX , and JAN levels). Screening shall be , ) (4) 13 JANTXV and JANTX level Thermal impedance (see 4.3.2) Not required Method 1038 of , thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening level


Original
PDF MIL-PRF-19500/118H MIL-PRF-19500/118G 1N483B, 1N485B, 1N486B, 1N5194, 1N5194UR, 1N5194US, 1N5195, 1N5195UR,
2003 - 1N5196

Abstract: 1N5194 JANTX 1N5194 1N5195
Text: 1N5194 1N5195 1N5196 · AVAILABLE IN JAN, JANTX , AND JANTXV PER MIL-PRF-19500/118 · GENERAL PURPOSE SILICON DIODES · METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C I FSM TP = 1/120 s V (pk


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PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5196 1N5194 JANTX 1N5194 1N5195
2001 - 1N5194

Abstract: 1N5195 1N5196
Text: 1N5194 1N5195 1N5196 · AVAILABLE IN JAN, JANTX , AND JANTXV PER MIL-PRF-19500/118 · GENERAL PURPOSE SILICON DIODES · METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C I FSM TP = 1/120 s V (pk


Original
PDF 1N5194 1N5195 1N5196 MIL-PRF-19500/118 100mA IN5194 IN5196 1N5194 1N5195 1N5196
2004 - 1N5194

Abstract: No abstract text available
Text: FEATURES 1N5194 · · · · · 1N5194 AVAILABLE IN JAN, JANTX , AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS: Total Power Dissipation, 25°C: Power Derating Factor, 25°C: Max. Operating Current, 25°C: Derating Factor: Max. Operating Current, 150°C: Derating Factor: D.C. Reverse Voltage (VRWM): DESIGN DATA -65°C to +175°C


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PDF 1N5194 1N5194 MIL-PRF-19500/118 500mW 200mA MILPRF-19500/118 DO-35
DIODE 1N649

Abstract: 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
Text: JAN, JAN TX, JA N TX V JAN, JAN TX, JA N TX V JAN, JAN TX, JAN TX V JAN, JANTX , JA N TX V JANTX , JA N


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PDF 1N270 1N276 1N277 1N645/1N645-1 1N647/1N647-1 1N746A-1 1N759A-1 1N914 1N962B-1 1N973B-1 DIODE 1N649 1n41481 zener diode diode 1N645 1N4148-1 JAN 1N5619 JAN 1N270 JAN diode 1n4454
2008 - 1N5194

Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE ­ METALLURGICALLY BONDED ­ HERMETICALLY SEALED ­ DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118 DEVICES QUALIFIED LEVELS JAN JANTX JANTXV 1N5194 MAXIMUM RATING AT 25°C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS: Total Power Dissipation, 25°C: Max. Operating Current, 25°C: D.C. Reverse


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PDF MIL-PRF-19500/118 1N5194 500mW 200mA MIL-PRF19500/118 DO-35 LDS-0031 1N5194
N5194

Abstract: JAN1N486B 1N485B 1N483B 1N486B N5195 1N5195 1N5196 D035 JAN1N485B
Text: No file text available


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PDF 979-K220 1N483B 1N486B 1N5194 1N5196 MIL-S-19500/118C. 1N5196 1N5196. 200mAdc, N5194 JAN1N486B 1N485B N5195 1N5195 D035 JAN1N485B
1N4868

Abstract: lt 8220 1N483B1 1N4858 JAN1N486B 1N5194 1N5196 1N5195 1N486B 1N485B
Text: No file text available


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PDF 1N483B-1N486B 1N51I94-1N5196 MIL-S-19500/118C. 1N483B 80ACKAGE: 1N483B, 1N5194, 1N5195, 1N5196. 1N483B- 1N4868 lt 8220 1N483B1 1N4858 JAN1N486B 1N5194 1N5196 1N5195 1N486B 1N485B
BKC Semiconductors

Abstract: No abstract text available
Text: No file text available


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PDF DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 BKC Semiconductors
DSAIH0002559

Abstract: No abstract text available
Text: No file text available


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PDF DO-35 1N5194 1N5196 DO-213AA 1N5195 200mAdc, 1N5194/95/96 DSAIH0002559
n5195

Abstract: JAN1N486B
Text: No file text available


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PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5196 1N5194, N5195, 1N5196. n5195 JAN1N486B
q292

Abstract: 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
Text: ® Available to Source Control Drawings • Processing available to JAN, JANTX , JANTXV and JAN S , FEATURES « Available to Source Control Drawings ® Processing available to JAN, JANTX , and JAN S Quality


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PDF D0G0350 1N5194 200mA 250mW 100mA 4031-B MIL-STD-750 q292 100C 1N3595 1N3595-1 1N5194 1M3595-1 BKC International MIL-STD-202 METHOD 208 ir2150e
diode 483b

Abstract: 483B BY100 JAN1N marking E 1n diode
Text: No file text available


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PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5194, 1N5196. 1N486B, 1N5194- diode 483b 483B BY100 JAN1N marking E 1n diode
JAN1N486B

Abstract: No abstract text available
Text: No file text available


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PDF 979-K220 1N5194 1N5196 1N5194, 1N5195, 1N5196. DO-35 JAN1N486B
IN5240

Abstract: in5242 in5239 in5228 1N4868 1N5108 1N5110 IN5226 JAN1N486B IN5227
Text: No file text available


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PDF 1N5102 1N5103 1N5104 1N5105 1N5106 1N5107 1N5108 1N5109 1N5110 1N5111 IN5240 in5242 in5239 in5228 1N4868 IN5226 JAN1N486B IN5227
1N4868

Abstract: 1N233 zener diode 1N429 1N471 IN753 1N239 IN4858 JAN1N486B IN4868 diode 1N2320
Text: No file text available


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PDF 1N2250) 1N226I1) 1N227 150mw 1N228C) 1N229C) 1N2301D 1N231C) 1N2320 1N233 1N4868 1N233 zener diode 1N429 1N471 IN753 1N239 IN4858 JAN1N486B IN4868 diode
cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR m19500/483 1N1742A transistor 2N3251
Text: No file text available


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PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR m19500/483 1N1742A transistor 2N3251
1999 - LL-35

Abstract: DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR
Text: No file text available


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PDF 1N5194UR 1N5196UR LL-35 DO-213AA 100mA 1N5194 1N5195 1N5196 DO-213AA glass mini melf diode 1N5194 1N5194UR 1N5195 1N5196 1N5196UR
2010 - 1N5426

Abstract: 1n5208 1N458B 1N5209 1n890 1N456A
Text: No file text available


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PDF 200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454 1N5426 1n5208 1N458B 1N5209 1n890 1N456A
1N458

Abstract: 1N626 BA170 1N459a BAV18 BAV17 1N627 1N462A 1N251 hep silicon diode
Text: No file text available


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PDF U711M D0B0302 DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N458 1N459a 1N627 hep silicon diode
Zener Diode 4148

Abstract: zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 4148 zener diode IN4444 1N4728
Text: No file text available


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PDF DQQQ271 1N4728 1N4752 500mW DO-41 1N5194 1N5195 1N5196 Zener Diode 4148 zener T 4148 ZENER 4148 T 4148 zener ZENER diode t 4148 5 volts zener diode 4148 zener diode in 4148 4148 zener diode IN4444
1N626

Abstract: 1N658 DSAIH000251 1N661
Text: No file text available


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PDF DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 DSAIH000251 1N661
Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454
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