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1N456 datasheet (500)

Part ECAD Model Manufacturer Description Type PDF
1N456 1N456 ECAD Model National Semiconductor High Conductance Low Leakage Diode Original PDF
1N456 1N456 ECAD Model Taitron Components Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 30V, SOD-27|SOD-68, 2-Pin Original PDF
1N456 1N456 ECAD Model APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
1N456 1N456 ECAD Model APD Semiconductor Planar Diodes Scan PDF
1N456 1N456 ECAD Model BKC International 25 V, 500 mW low leakage diode Scan PDF
1N456 1N456 ECAD Model Crimson Semiconductor SILICON DIODES Scan PDF
1N456 1N456 ECAD Model Fairchild Semiconductor Low leakage diode. Working inverse voltage 25V. Scan PDF
1N456 1N456 ECAD Model Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
1N456 1N456 ECAD Model General Diode Germanium Diodes, DO-7 Case Scan PDF
1N456 1N456 ECAD Model Motorola Motorola Semiconductor Datasheet Library Scan PDF
1N456 1N456 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N456 1N456 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
1N456 1N456 ECAD Model Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
1N456 1N456 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1N456 1N456 ECAD Model Others Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
1N456 1N456 ECAD Model National Semiconductor Low Leakage Diodes Scan PDF
1N456 1N456 ECAD Model National Semiconductor Switching Diodes Scan PDF
1N456 1N456 ECAD Model Thomson-CSF Condensed Data Book 1977 Scan PDF
1N456 1N456 ECAD Model Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
1N456 1N456 ECAD Model Unitrode International Semiconductor Data Book 1981 Scan PDF

1N456 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1n457

Abstract: n456a DSAIH00025333 1N456A
Text: Temperature Lead Temperature ? 1N456 1N456A 1N458A 1N457 1N459 1N457A 1N459A 1N458 , Forward Current Peak Forward Surge Current Pulse Width = 1ns Pulse Width = 1s 1N456 /A 25 V 1N457/A , /8A/9A T E ST C O N DITIO NS lF = lF = lF = lF = lF = 100 mA 40 mA 20 mA 7 mA 3 mA 1N456 1N457 1N458 1N459 lR Reverse Current Breakdown Voltage 1N456 /A 1N457/A 1N458/A 1N459/A Capacitance .0 2 0


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PDF 1N456 1N456A 1N458A 1N457 1N459 1N457A 1N459A 1N458 500mW 1N456/A n456a DSAIH00025333
Diode BAY 21

Abstract: Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général Case DO 7 \"F(AV) VR(V»\ 50.90 mA 100.150 mA 200.225 mA 400 mA 10 25 1N456 1N 456 A 30 35 40 BAY 41 50 BAY 44 , 224-300 300 BAY 46 1N456 trr> 300 ns BAX12 trr HI = 15 120 ns (11- Ultra 'ast , ) (pF) general purpose Tamb = 25°C usage général 1N456 25 90 1 40 25 25 10 1N 456 A 25- %


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PDF 1N456 BAW21A CB-26) Diode BAY 21 Diode BAY 18 Diode BAY 32 Diode BAY 19 Diode BAY 12 Diode BAY 45 BAY46 BAW32B BAY18 BAW32D
1N456A

Abstract: 1N457 1N459a N457 1N456 1N457A 1N458 1N458A 1N459 low leakage diodes
Text: Forward Voltage 1N456A /7A/8A/9A 1.0 V lF = 100 mA 1N456 1.0 V lF = 40 mA 1N457 1.0 V lF = 20 mA , B K C INTERNATIONAL LOW LEAKAGE DIODES D3E D J il T'HA a □ □□Q57sT~|~~ 7~-Ö/- a 1N456 1N458 1N456A 1N458A 1N457 1N459 1N457A 1N459A ABSOLUTE MAXIMUM RATINGS • l„ 25 nA @ WIV • C , 1ns Pulse Width = 1s -65 °C to +200 °C +175°C +260°C 500mW 3.33 mW/ °C 1N456 /A 1N457/A 25V , VR = Rated WIV, TA= 150 °C Bv Breakdown Voltage 1N456 /A 30 V ln = 100|iA 1N457/A 70 V l„ =


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PDF Q57sT~ 1N456 1N458 1N456A 1N458A 1N457 1N459 1N457A 1N459A 500mW 1N459a N457 1N458 1N458A 1N459 low leakage diodes
1n456

Abstract: 25nA 1N458 1N457
Text: DIODE Low Current 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 FEATURES · , JAN 1N457 1N456 Reverse Working V o lta g e , . -65 *C to JAN 1N456 JAN 1N45S . 125V. . . . . 175V . 150V _ . , Voltage QIOOpA 30V 70V 150V 200V Type 1N456 1N457, J 1N458, J 1N459, J Forward Voltage 1.0V 1.0V , MECHANICAL SPECIFICATIONS DO-7 1N456 1N457 1N458 1N459 f 5 12/79 8-6 U N ITR O D E


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PDF 1N456 1N457; 1N457 1N458; 1N458 1N459; 1N459 MIL-S-1950W193 25nA
1N457

Abstract: 1n457 unitrode
Text: M ICROSEMI CORP/ ÜIATERTOUN 50E B ■0012350 3Ö1 M U N I T 1N456 1N457; JAN 1N457 1N458; JAN 1N458 1N459; JAN 1N459 DIODE Low Current 'T-ot-oc i DESCRIPTION General-purpose low current diode with high reliability characteristics FEATURES • Metallurgical Bond â , 25*C JAN 1N457 1N456 JAN 1N456 JAN 1N469 . 6 0 V . . . . .1 2 5 V . , MECHANICAL SPECIFICATIONS DO-7 1N456 1N457 1N458 1N459 I I F J SEMICONDUCTOR PRODUCTS


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PDF 1N456 1N457; 1N457 1N458; 1N458 1N459; 1N459 MIL-S-19500/193 1N457 1n457 unitrode
1N459

Abstract: 1N456 1N457 IN456 IN457 J 1N456 1N458
Text: DIODE 1N456 UtVJUC. JAN 1N457 Low Current Jan 1N458 JAN 1N459 FEATURES • Metallurgical , MAXIMUM RATINGS, AT 25°C JAN JAN JAN 1N456 1N457 1N458 1N4S9 Reverse Working Voltage , .-65°Cto +200°C. MECHANICAL SPECIFICATIONS 1N456 JAN 1N457,1N458,1N459 A INCHES MILLIMETERS A .085 - .130 , /79 610 nm _ UNITRQDE 1N456 JAN 1N457, 1N458, 1N459 ELECTRICAL SPECIFICATIONS (at 25°C unless , 1N456 1.0V @ 40mA 25nA @ 25V 5|iA @ 25V 30V 1N457, J 1.0V @ 20mA 25nA @ 60V 5fiA @ 60V 70V 1N458, J


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PDF 1N456 1N457 1N458 1N459 MIL-S-19500/193 1N456 1N457 1N458 1N459 IN456 IN457 J 1N456
diode IN456

Abstract: IN456
Text: Drop V„ (Volts) V, (Volts) 1, (mA) T„, (nS) 1N456 1N456A 1N457 1N457A 30 30 , 1N456 I n ter n a t/ onal S e m ic o n d u c t o r I n c . thru 1N463/A LOW LEAKAGE DIODES And Other Diodes DIFFUSED SILICON PLANAR ABSOLUTE MAXIMUM RATINGS (NoteD Tem peratures S to ra g e T e m p e ra tu re : • M axm um J u n c tio n O p e ra tin g T e m p e ra tu re : Lead T e m pe ratu re: -65° C to + 200° C + 175° C + 2 6 0 °C :o Pow er D issipation


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PDF 1N456 1N463/A IN456/A 1N457/A 1G0G37Ã diode IN456 IN456
1N485

Abstract: 1N482 1n456 Q 0265 R 1n461 1n4828 1n462 1n464 1N484A texas instruments 1N457A
Text: RM TYPE Peak Reverse Voltage 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A 1 N 461 1N461A 1N462 , S L IM IT S 1N456 1N456A 1 N 4 57 1N457A 1N 458 1N458A 1N459 1N459A 1 N 4 61 1N461A 1N462 1N462A , TYPES 1N456 THRU 1N459, 1N461 THRU 1N464, 1N482 THRU 1N485, AND SUFFIX VERSIONS SILICON GENERAL , 2 2 TYPES 1N456 THRU 1N459, 1N461 THRU 1N464, 1N482 THRU 1N485. AND SUFFIX VERSIONS SILICON , 5 0 1 2 TYPES 1N456 THRU 1N459. 1N461 THRU 1N464, 1N482 THRU 1N485. AND SUFFIX VERSIONS SILICON


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PDF 1N456 1N459, 1N461 1N464, 1N482 1N485, 1N459. 1N464. 1N485 Q 0265 R 1n4828 1n462 1n464 1N484A texas instruments 1N457A
Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général Case DO 7 \"F(AV) VR(V»\ 50.90 mA 100.150 mA 200.225 mA 400 mA 10 25 1N456 1N 456 A 30 35 40 BAY 41 50 BAY 44 BÄ wie Sjifcv-, »f WWt ■60 1N 457 BAY 42 1N 457 A 70 1N 483 B BAW21A (3 , 224-300 300 BAY 46 1N456 trr> 300 ns BAX12 trr HI = 15 120 ns (11- Ultra 'ast


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PDF 1N456 BAW21A 1N456 BAX12 CB-102) CB-104) Diode BAY 46 Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
1n9148

Abstract: D035 1N483A Diode d07-15 1n461 by 1N456A IN662A 1N484 J 1N456 1N457
Text: TT DËJ 5S14DTt, 000D3S5 0 2514096 CRIMSON SEMICONDUCTOR INC, ; ~ 990 00352 D ~f- Öl -Of SILICON DIODES r f Typ« Cau P.I.V. Volts Min. Forward Currant at IV Ravana Currant at2St Ra-varca Voltaga Maximum Ravfria Currant at Tamp. Cap. Ra-cov. Tima •Trr Powar Dissipation mA pA //A t pF nS mW 1N456 D035 30 40 .025 25 5 150 250 1N456A D035 30 100 .025 25 5 150 250 1N457 D035 70 20 .025 60 5 150 250 1N457A 0035 70 100 .025 60 5 ISO 250 1N458 D035 150 7 .025 125 E 150


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PDF 5S14DTt, 000D3S5 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N461 1N461A 1n9148 D035 1N483A Diode d07-15 1n461 by IN662A 1N484 J 1N456
Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général Case DO 7 \"F(AV) VR(V»\ 50.90 mA 100.150 mA 200.225 mA 400 mA 10 25 1N456 1N 456 A 30 35 40 BAY 41 50 BAY 44 BÄ wie Sjifcv-, »f WWt ■60 1N 457 BAY 42 1N 457 A 70 1N 483 B BAW21A (3 , 224-300 300 BAY 46 1N456 trr> 300 ns BAX12 trr HI = 15 120 ns (11- Ultra 'ast


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PDF 1N456 BAW21A CB-26) CB-127 Tamb100Â Tamb125Â Tamb60Â CB-127 CB-127. Diode BAY 46 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général Case DO 7 \"F(AV) VR(V»\ 50.90 mA 100.150 mA 200.225 mA 400 mA 10 25 1N456 1N 456 A 30 35 40 BAY 41 50 BAY 44 BÄ wie Sjifcv-, »f WWt ■60 1N 457 BAY 42 1N 457 A 70 1N 483 B BAW21A (3 , 224-300 300 BAY 46 1N456 trr> 300 ns BAX12 trr HI = 15 120 ns (11- Ultra 'ast


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PDF 1N456 BAW21A SFD79 CB-26) baw55 CB-127 CB-127. Diode BAY 46 Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
equivalent diode for 1n457

Abstract: IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135
Text: | 34t.Tt.74 0D27474 0 1N456 /457/458/459 r-# - à f FD LL456/457/458/459 1N456A /457A/458A/459A FDLL456A , 1N456 1N457 1N458 1N459 1N456A 1N457A 1N458A 1N459A FDLL456 FDLL457 FDLL458 FDLL459 FDLL456A , Repetitive Forward Current if(surge)Peak Forward Surge Current Pulse Width = 1 ¡is Pulse Width = 1 s 1N456 , ) SYMBOL CHARACTERISTIC MIN MAX UNITS TEST CONDITIONS vF Forward Voltage 1N456A /7A/8A/9A 1.0 V lp = 100 mA 1N456 1.0 V lp = 40 mA 1N457 1.0 V lF = 20 mA 1N458 1.0 V ip = 7 mA 1N459 1.0 V If


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PDF PN5135/FTS05135 PN5136/FTS05136 PN5137/FTS05137 625mW PN/FTS05135) PN/FTS05136/7) PN5142, PN5143 PN5135 equivalent diode for 1n457 IN461A IN484B 1N4848 458a diode in462a PN5142 in485b PN5139 PN5135
Not Available

Abstract: No abstract text available
Text: 1N456 Diodes Silicon Rectifier Military/High-RelN I(O) Max.(A) Output Current90m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage25 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.70 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)40m @Temp. (øC) (Test Condition) I(RM) Max.(A) Reverse Current25n @V(R) (V)(Test Condition)25 I(RM) Max.(A) Pk. Rev. Current5.0u @Temp. (øC) (Test Condition)150’ Maximum Operating Temp (øC)200 Package StyleDO-35 Mounting StyleT Description


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PDF 1N456 Current90m Voltage25 Current25n StyleDO-35
BAY18

Abstract: BAY17 in457a 23J2 1N456 1N461 1N467 IN457 Bay20
Text: (CB 261 Silicon signal diodes - General Purpose Diodes de signât au silicium - Usage générai Tamb 25 °C DO 7(1) DO 7(1) DO 7(1) DO 7(11 DO 7(1) DO 7(1) DO 7(1) DO 7(1) *1,2 Tvpe Case VR-Vrm io VF / lF Ir / vH C DRS75 Boîtier (V) (mA) (V) < (mA) InA) / ' (VI IpF) page max max max ' max max "typ 1N456 DO 7(11 25 90 1 40 25 25 10 241 1N 456 A DO 7(1) 25-30 200 1 100 25 25 243 1N467 DO 7(1) 60 75 1 20 25 60 8 241 ÌN 457 A DO 7(1) 60-70 200 1 100 25 60 243


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PDF DRS75 1N456 1N467 1N461 Tamb125Â BAY18 BAY17 in457a 23J2 IN457 Bay20
Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Text: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général Case DO 7 \"F(AV) VR(V»\ 50.90 mA 100.150 mA 200.225 mA 400 mA 10 25 1N456 1N 456 A 30 35 40 BAY 41 50 BAY 44 BÄ wie Sjifcv-, »f WWt ■60 1N 457 BAY 42 1N 457 A 70 1N 483 B BAW21A (3 , 224-300 300 BAY 46 1N456 trr> 300 ns BAX12 trr HI = 15 120 ns (11- Ultra 'ast


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PDF 1N456 BAW21A BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 CB-127. Diode BAY 71 Diode BAY 45 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
FJT1

Abstract: FJT1100 1N456A FJT1102
Text: Switching Diodes Low Leakage Diodes Device No. 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDH300 Package No. DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 VRRM (V) Min 30 30 70 70 150 150 200 200 150 (Glass Package) VF (nA) Max 25 25 25 25 25 25 25 25 1 @ VR c @ Max 1 1 1 1 1 1 1 1 0.68 0.75 0.8 0.88 0.92 1 0.68 0.76 0.8 0.89 0.92 1 f (mA) 40 100 20 100 7 100 3 100 1 5 10 50 100 200 1 5 10 50 100 200 50 100 150 200 250 300 1 5 10 50 100 200 50 50 0.001 0.1 1 50 6 6 6 8


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PDF 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDH300 DO-35 FJT1 FJT1100 FJT1102
FAIRCHILD 1N459A

Abstract: do-35 1N4009 1N459a 1N459 1N485B 1N486B 1N625 FDH300 FDH666
Text: 10 1.5 DO-7 22 1N456A 30 25 25 1.0 100 — DO-35 23 1N456 30 25 25 1.0 40 10 DO


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PDF FDH666 DO-35 1N44S0 1N4009 1N625 FDH999 FAIRCHILD 1N459A do-35 1N459a 1N459 1N485B 1N486B FDH300
1N4848

Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Text: NATL SEMICOND DISCRETE HE D | fa501J.30 0037001 7 Low Leakage Diodes (Glass Package) - T-01-01 Device No. Package No. VRRM V Min Ir nA ® Max Vr V Min VF V @ Max IF mA C PF Max Proc No. 1N456 DO-35 30 25 25 1.0 40 10 D2 1N456A DO-35 30 25 25 1.0 100 D2 1N4S7 DO-35 70 25 60 1.0 20 8.0 D2 1N457A DO-35 70 25 60 1.0 100 D2 1N458 DO-35 150 25 125 1.0 7 6.0 D2 1N458A DO-35 150 25 125 1.0 100 D2 1N4S9 DO-35 200 25 175 1.0 3 6 D2 1N459A DO-35 200 25 175 1.0 100 D2 1N482B DO-35 40 25


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PDF fa501J T-01-01 1N456 DO-35 1N456A 1N457A 1N458 1N4848 1N4868 1N4828 1N484 1N4858 1N458A
FD333

Abstract: JAN1N486B FJT1100
Text: 1N456 1N456A Preferred devices in bold ty p e 14


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PDF 1N486 1N486A 1N486B 1N459 1N459A 1N485A 1N485B FD333 JAN1N486B FJT1100
2010 - 1N5426

Abstract: 1n5208 1N458B 1N5209 1n890 1N456A
Text: 5 5 100 60 125 - _ 2.5 2.5 1.1 4 4 - .10 1.00 55 6 250mW 1N456 1N456A 1N457


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PDF 200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454 1N5426 1n5208 1N458B 1N5209 1n890 1N456A
1N484

Abstract: 1N466A D0-35 1N462 1N458 1N4838 1N456 1N457 1N458A 1N461
Text: I S514QU 0000355 0 ' 2514D96 CRÎMSON SEMICONDÛCTÔR jNC , i .990 00352 D f- ÖI-©? SILICON DIODES Typ« Ca» P.I.V. Volts Min. Forward Currant at IV Ravaraa Currant at2St R«- varea Volt-*8* Maximum Ravarsa Currant at Tamp. Cap. fta-cov. Tima •T„ Powar Dissipation mA M pA. t PF nS mW 1N456 D035 30 40 .025 25 5 150 250 1N466A D035 30 100 .025 25 5 150 250 1N457 D035 70 20 .025 60 5 150 250 1N457A 0035 70 100 .025 60 5 ISO 250 1N458 D035 150 7 .025 125 5 150 250


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PDF S514QU 2514D96 1N456 1N466A 1N457 1N457A 1N458 1N458A 1N461 1N461A 1N484 D0-35 1N462 1N4838
MIL-S-19500

Abstract: 2N1165 N456
Text: shock, Method column: Add "1056, cond. A". Preparing activity: Navy - EC (Project 596 1-N456 ) User


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PDF MIL-S-19500/178B 2N1165 MIL-S-19500/i78B MIL-S-19500, 1-N456) MIL-S-19500 2N1165 N456
fjt1101

Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Text: Low Lc »akage Diodes (Glass Package) Device No. Package No. V rrm (V) Min 'r (nA) @ Max vr (V) Min vf (V) Max 1N456 DO-35 30 25 25 1 40 10 1M 1N456A DO-35 30 25 25 1 100 1M 1N457 DO-35 70 25 60 1 20 8 1M 1N457A DO-35 70 25 60 1 100 1M 1N458 DO-35 150 25 125 1 7 6 1M 1N458A DO-35 150 25 125 1 100 1M 1N459 DO-35 200 25 175 1 3 6 1M 1N459A DO-35 200 25 175 1 100 1M FDH300 DO-35 150 1 125 0.68 0.75 0.8 0.88 0.92 1 1 5 10 50 100 200 6


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PDF 1N456 DO-35 1N456A 1N457 1N457A 1N458 fjt1101 FJT1102 1N459A FJT1100 1N458A
EM 5135 diode

Abstract: 458a diode IN461A 1N459 equivalent T219 pn5139 pn5135 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode
Text: 0D2747I4 0 A S c h lu m b e rg e r C o m p a n y 1N456 /457/458/459 r-« - «T FD LL456/457/458/459 1N456A /457A/458A/459A FDLL456A/457A/458A/459A Low Leakage Diodes_ PACKAGES 1N456 1N457 1N458 1N459 1N456A 1N457A 1N458A 1N459A FDLL456 FDLL457 FDLL458 FDLL459 FDLL456A FDLL457A FDLL458A , +200°C + 175°C +260°C 500 mW 3.33 mW /6C 1N456 /A 1N457/A 1N458/A 1N459/A Maximum Voltage and Currents , unless otherw ise noted) SYMBOL vF CHARACTERISTIC Forward Voltage 1 N 4 5 6 A /7 A /8 A /9 A 1N456


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PDF iti74 PN5135/FTS05135 PN5136/FTS05136 PN5137/FTS05137 PN5135 PN5136 PN5137 FTS05135 FTS05136 FTS05137 EM 5135 diode 458a diode IN461A 1N459 equivalent T219 pn5139 FDSOI500 equivalent diode for 1n457 0/EM 5135 diode
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