The Datasheet Archive

1N4532 datasheet (25)

Part Manufacturer Description Type PDF
1N4532 EIC Semiconductor High Speed Switching Diodes Original PDF
1N4532 Philips Semiconductors High-speed Diodes Package: SOD66 (DO-41) Original PDF
1N4532 Philips Semiconductors High Speed Silicon Diodes Original PDF
1N4532 General Diode Silicon Diode Selection Guide Scan PDF
1N4532 General Electric Semiconductor Data Handbook 1977 Scan PDF
1N4532 General Electric Semiconductor Data Book 1971 Scan PDF
1N4532 International Components Silicon Switching Diode Scan PDF
1N4532 Microsemi Computer Switching Diodes Scan PDF
1N4532 Microsemi Computer Diode General Purpose Switching Scan PDF
1N4532 Microsemi COMPUTER DIODE General Purpose Switching Scan PDF
1N4532 Motorola Motorola Semiconductor Datasheet Library Scan PDF
1N4532 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N4532 Others Basic Transistor and Cross Reference Specification Scan PDF
1N4532 Others GE Transistor Specifications Scan PDF
1N4532 Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
1N4532 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1N4532 Others The Diode Data Book with Package Outlines 1993 Scan PDF
1N4532 Others Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
1N4532 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
1N4532 Philips Semiconductors High-speed diodes Scan PDF

1N4532 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4153 1N4154 MHD618 in4454 Scans-00103068 1N4151
Text: MILLI-HEATSINK DIODE (MHD) 1N4532-1N4534 Ì 0.100 r l,JlJ T 0.090 0J- . 0.120 nTìfiT 1 "H ,-1 ir , Silicon Diodes 1N4154 SEE PAGE 205 r-—I 1N4151,2,3 1N4454 1N4532 ,3,4 This family of , MHD618 1N4532 1N4152 1N4153 IN4533 IN4534 Reverse Recovery Time of ' 4 nanoseconds maximum • â , Forward Surge (1 /¿sec. pulse) Power Dissipation Temperature Operating Storage 1N4454 1N4532 50 , +200 ■1N4153 1N4534 50 1N4151, 2, 3 1IM4454 1N4532 , 3, 4 DHD MHD Volts mA mA mA mA °C


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PDF 1N4154 1N4151 1N4454 1N4532 JS-2-65-11 1N4151, 1N4532, 1N4151 equivalent Diode Equivalent 1n4151 1N4152 1N4153 MHD618 in4454 Scans-00103068
1N4532

Abstract: 1N4531
Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531, 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr


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PDF 1N4531, 1N4532 150oC 100mA, tr30ns 1N4532 1N4531
PJ 949 diode

Abstract: No abstract text available
Text: bbSBiai ooeb'iob m N AMER PHILIPS/DISCRETE « apx bSE 1N4531 1N4532 D , 1N4532 75 75 Continuous reverse voltage VR max. Repetitive peak forward current 'frm , b b s a ^ i oo2bio? 'isa « 1N4531 1N4532 N AMER PHILIPS/DISCRETE y apx bTE v , reverse voltage Repetitive peak reverse voltage 1N4532 VR max. 75 75 75 75 V RRM , h M4531 High-speed silicon diodes N AMER PHILIPS/DISCRETE 1N4532 b'lE D Forward


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PDF 1N4531 1N4532 DO-34 PJ 949 diode
2005 - 1N4532

Abstract: 1N4531
Text: 1N4531 ~ 1N4532 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : · High switching speed , Current 1N4532 Forward Voltage Diode Capacitance Test Condition VR = 20 V VR = 20 V , Tj = 150 °C VR = 50 V VF 1N4531 1N4532 VR = 50 V , Tj = 150 °C IF = 10 mA Cd f = 1MHz ; VR = 0 , 1N4532 Trr RL = 100 ; Measured at IR = 1 mA Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION


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PDF 1N4531 1N4532 DO-34 1N4532 1N4531
1N4532

Abstract: 1N4531
Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531, 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr


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PDF 1N4531, 1N4532 150oC 100mA, 1N4532 1N4531
1N4532

Abstract: IN4532 S0068 1N4531 IN4531 IR 10D DIODE
Text: Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES â , current: max. 450 mA. DESCRIPTION The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar , CHARACTERISTICS Tj = 25 °C; unless otherwise specified. 1N4531 ; 1N4532 SYMBOL PARAMETER CONDITIONS MIN. MAX , High-speed diodes 1N4531 ; 1N4532 GRAPHICAL DATA 300 'f (mA) 200 100 MBG4S0 , Product specification High-speed diodes 1N4531 ; 1N4532 10J (HA) 102 10 10" 10- 100 Tj <°C


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PDF 1N4531; 1N4532 DO-34) 1N4531 1N4532 IN4532 S0068 IN4531 IR 10D DIODE
in4454

Abstract: 1N3064
Text: Surge Current, lsec 1N3064 . 0.5A 1N4454.-1. 1A 1N4532 , 1N4454; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532 ; JAN, JANTX & JANTXV 1N4532 ABSOLUTE MAXIMUM RATINGS, XT 29*C Reverse Breakdown Voltage , 1N4454-1 1N4532 Capacitance 2pF ® Vn = OVdc f = 1MHz Vdg * 50mV (pktopk) Forward Voltage l.OVdc ® If


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PDF 1N3064 1N4454; 1N4454 1N4454-1 1N4532; 1N4532 1N3064 200mA 1N4532. in4454
Not Available

Abstract: No abstract text available
Text: . 75mA 1N4532. , 1N4532. 0.5A Operating , , ja n t x & ja n t x v 1N4454-1 1N4532 ; JAN, JANTX & JANTXV 1N4532 U IK J U L . General Purpose , 1N4454-1 1N4532 Reverse Current @ is o ' c Reverse Current @ 25°C Reverse Breakdown , JTXV 1N4532 J, JTX I JTXV 1N4532 I S o e c D 1.0 M IN .- 1 .5 MAX. .0 1 8 -.0 2 2 A


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PDF 1N3064 1N4454; 1N4454 1N4454-1 1N4532; 1N4532 1N3064. 1N4454 200mA 1N4532.
1N4532

Abstract: 1N3064 JANTX 1N3064
Text: RATINGS, AT 25°C JA N N4454; JAN, JANTX && JANTXV 1N4454 jan, ja n tx & ja n tx v 1N4454-1 1N4532 ; JAN, JANTX & JANTXV 1N4532 i FEATURES · Metallurgical Bond JA N TX1N 3064 Reverse Breakdown Voltage , . 200mA 1N4532 . 125mA Surge Current, lse c 1 N 3 0 6 4 . 0.5A 1N4454.-1. 1A 1N4532 , o o n c < 3pF Forward Recovery Voltage Forward Recovery Time Type 1N3064 1N4454 1N4454-1 1N4532


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PDF N4454; 1N4454 1N4454-1 1N4532; 1N4532 200mA 125mA 1N3064 1N4532 JANTX 1N3064
1N4531

Abstract: 1N4534 1N4536
Text: 1N4531 1N4534 1N4532 1N4536 1N4533 These diodes are in a glass sealed envelope and are suitable , general rectification Cathode band color and marking Part no. 1N4531 1N4532 1N4533 1N4534 1N4536 , 2 2 2 P (mW) 500 500 500 500 500 1N4531 1N4532 1N4533 1N4534 1N4536 100 75 40 75 35 75 , -65 - +200 -6 5 -+ 2 0 0 -65 - +200 Diodes n o H in o o 63 1N4531, 1N4532 ,1N4533 , 0.1 50 100 20 4 4 1N4532 0.491 0.53 0.59 0.62 0.55 0.59 0.67 0.70 0.49 0.53 0.59 0.62


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PDF 1N4531 1N4534 1N4532 1N4536 1N4533 DO-34 1N4533
IN4531

Abstract: IN4532 1N4532 1N4531
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed , 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 , diodes 1N4531; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL , Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 GRAPHICAL DATA


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 IN4531 IN4532 1N4531
1N4532

Abstract: 1N4531
Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 75 , 1N4531 1N4532 1N4531 1N4532 IR IR IR IR 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd 4 2 pF pF 1N4531 1N4532 1N4532 trr trr trr 4 2 4 ns ns ns Vfr


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PDF 1N4531, 1N4532 DO-34 1N4531 1N4532 1N4531
2008 - Switching Diodes

Abstract: 1N4532 1N4531
Text: TH97/10561QM 1N4531 ~ 1N4532 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : · High switching speed: max. 4 ns 1.00 (25.4) min , 100 ; Measured at I R = 1 mA 1N4531 IR Reverse Current 1N4532 Forward Voltage Diode Capacitance Reverse Recovery Time Page 1 of 2 Test Condition 1N4531 1N4532 1N4531 1N4532 Min , /1033 RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS


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PDF TH97/10561QM 1N4531 1N4532 TW00/17276EM TH07/1033 DO-34 Switching Diodes 1N4532 1N4531
IN3064

Abstract: in4454 1N4454 diode in3064 1N3064 1N4532 diode 1n4454 1N4454-1 JANTX1N3064
Text: General Purpose jan, jantx & jantxv 1n4454-1 Switching 1n4532 ; jan, jantx & jantxv 1n4532 ABSOLUTE , , 1N3064.75mA 1N4454.-1.200mA 1N4532 .125mA , 1N4454.-1.1A 1N4532 . 0.5A Operating Temperature Range , 1N3064 1N4454 1N4454 1 1N4532 O.ljjAdc <8> Vr = 50V 100/jAdc @ Vn = 50V 75Vdc @ In = 5/uAde 4ns @ Ir - In , , JTX & JTXV 1N4454 & 1N4454-1 J, JTX & JTXV 1N4532 j, jtx s. jtxv 1n4532 I -C—| inches


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PDF JANTX1N3064 1n4454; 1n4454 1n4454-1 1n4532; 1n4532 1N3064. 1N4454 200mA IN3064 in4454 diode in3064 1N3064 1N4532 diode 1n4454 1N4454-1 JANTX1N3064
1N4532

Abstract: 1N4531
Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531, 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA A A 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr


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PDF 1N4531, 1N4532 150oC 100mA, tr30ns 1N4532 1N4531
1999 - in4531

Abstract: 1N4532 1N4531 IN4532
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed , Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes , Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 ELECTRICAL , High-speed diodes 1N4531; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156 in4531 1N4531 IN4532
Not Available

Abstract: No abstract text available
Text: 1 N 4531 1N4532 1N4533 1N4534 1N4536 Diode, switching, leaded Dimensions (Units : mm , 31R 1N4532 Black 32R 1N4533 Black 33R 1N4534 Black 34R 1N4536 Black , Vrm (V) V r (V) 1N4531 100 75 450 150 200 1N4532 75 50 450 150 , dissip­ ation Peak reverse voltage 63 1N4531, 1N4532 ,1N4533,1N4534,1N4536 Switching diodes , 30 mA o 50 mA O 100 mA e 200 mA O 250 mA 1N4532 e 100 HA 75 TÃ


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PDF 1N4532 1N4533 1N4534 1N4536 DO-34 1N4531
1N4532

Abstract: 1N4531
Text: nNI4531 1N4532 Diodes in the sub-miniature DO-34 envelope intended for fast logic and general purpose , -34 (SOD-68). 1N4531 1N4532 Continuous reverse voltage VR max. 75 75 V Repetitive peak forward , 1N4532 ■I ^53^31 □D2b^D7 T5Ö HAPX N AflER PHILIPS/DISCRETE bTE D RATINGS (t < 1 Ms) (t < 1 s , accordance with the Absolute Max ¡mum System (IEC 134) 1N4531 1N4532 Continuous reverse voltage VR , QDSb^Ofl flT4 II bTE T> IAPX Forward recovery voltage for 1N4532 when switched to lp = 100 mA at tr


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PDF nNI4531 1N4532 DO-34 DO-34 OD-68) 1N4531 1N4532 1N4531
2009 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes , sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes fabricated in , ; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER , Sep 03 3 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156
in4531

Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed , 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 , specification High-speed diodes 1N4531; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise , Apr 03 3 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 in4531 IN453 1N4531 IN4532 DO-34
2009 - 1N4532

Abstract: 1N4531 IN4531 IN4532
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 1N4531; 1N4532 High-speed , Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes , NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 ELECTRICAL , diodes 1N4531; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156 1N4531 IN4531 IN4532
1N4454UR-1

Abstract: 1N3064 1N4454 1N4454-1 1N4532
Text: , SILICON, SWITCHING TYPES 1N3064, 1N4454, 1N4454-1, 1N4532 , AND 1N4454UR-1 JAN, JANTX, AND JANTXV The , 4.0 -55 to +175 50 250 1N4454-1 75 50 200 2/ 1 ,000 4.0 -55 to +175 50 250 1N4532 75 50 125 3/ 500 , .022 0.46 0.56 6 G .080 .120 2.03 3.05 1N4532 «0 .050 .065 1.27 1.65 3.4 L 1.000 1.500 25.40 , , 1N4454, and 1N4454-1 and .010 (.25 mm) for 1N4532 from the diode body to the end of the lead. Outside , 1N3064 1N4532 1N4454 and 1N4454-1 I0 = 75 mA dc I0 = 125 mA dc I0 = 200 mA dc IF = 75 mA dc IF = 125 mA


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PDF G000125 QD343E5 MIL-S-19500/144H MIL-S-19500/144G 1N3064, 1N4454, 1N4454-1, 1N4532, 1N4454UR-1 MIL-S-19500 1N3064 1N4454 1N4454-1 1N4532
in4151

Abstract: 1N4532 1N916 1N914B 1N914A 1N914 1N4152 1N4151 1N4149 1n4148 general diode
Text: Controlled Conductance I MILLI-HEATSINK DIODE (MHD) 1N4532-1N4534 Ì 0.100 r l,JlJ T 0.090 0J- . 0.120 , ¡ 1N4532 75 100 50 1.00 10 2 2 d034 39 1N4533 40 50 30 .880 20 2 2 d034 39 1 IN4534 75 50 50 , 1N4532 ,3,4 This family of General Electric silicon signal diodes are very high speed switching diodes , °C FEATURES 1N4151 1N4454 MHD618 1N4532 1N4152 1N4153 IN4533 IN4534 Reverse Recovery Time of ' 4 nanoseconds , 1N4454 1N4532 50 MHD & DHO Units 150 450 200 2000 500 1N4151 MHD618 50 1N4152 1N4533 30 -65 to


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PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4151 1N4532 1N4152 1n4148 general diode
2004 - MIL-PRF-19500/144

Abstract: 1N4532
Text: FEATURES 1N4532 · · · · · 1N4532 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, 1uS: Total Power Dissipation: Operating Current: -55°C to +175°C -55°C to +175°C 2.0A 500mW 125mA, TA= +25°C Derating Factor: 0.883mA/°C above TA= +25°C D.C. Reverse Voltage (VRWM): 50V DC ELECTRICAL


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PDF 1N4532 1N4532 MIL-PRF-19500/144 500mW 125mA, 883mA/ MILPRF-19500/144 DO-34 100mA MIL-PRF-19500/144
JX4454

Abstract: J1N4148 JV4454 1N4532 melf diodes color code metal detector circuit with pcb 4011 1N4454UB MELF DIODE multiple color bands 144n melf diodes color
Text: 1N4454-1, 1N3064, 1N4532. FIGURE 1. Physical dimensions. 3 MIL-PRF-19500/144N w/AMENDMENT 2 DO , , 1N4454UBD, 1N3064, 1N4532 , JAN, JANTX, AND JANTXV Device types 1N3064 and 1N4532 are inactive for new , 1N4454-1, 1N4454UR-1 1N4454UB, 1N4454UBCA, 1N4454UBCC, 1N4454UBD 1N3064 1N4532 75 VRWM IO(PCB , -7) 1N4532 (DO-34) Symbol BD BL LD LL BD BL LD LL BD BL LD LL Dimensions Inches , , 1N4454UR-1, 1N3064, 1N4532 1N4454-1, UR-1, 1N3064, 1N4532 DC Operation Maximum If Rating (mA) 250


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PDF MIL-PRF-19500/144N 1N4454-1, 1N4454UR-1, 1N4454UB, 1N4454UBCA, 1N4454UBCC, 1N4454UBD, 1N3064, 1N4532, JX4454 J1N4148 JV4454 1N4532 melf diodes color code metal detector circuit with pcb 4011 1N4454UB MELF DIODE multiple color bands 144n melf diodes color
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