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Nexperia
1N4531,133 DIODE GEN PURP 75V 200MA DO34
1N4531,133 ECAD Model
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NTE Electronics Inc
1N4531 DIODE GEN PURP 75V 125MA DO34
1N4531 ECAD Model
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Microchip Technology Inc
1N4531 DIODE GEN PURP 75V 125MA DO34
1N4531 ECAD Model
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Microchip Technology Inc
1N4531UR DIODE GEN PURP 75V 125MA DO213AA
1N4531UR ECAD Model
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Rochester Electronics LLC
1N4531133 DIODE GEN PURP 75V DO34
1N4531133 ECAD Model
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Nexperia
1N4531,113 DIODE GEN PURP 75V 200MA DO34
1N4531,113 ECAD Model
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Nexperia
1N4531,143 DIODE GEN PURP 75V 200MA DO34
1N4531,143 ECAD Model
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Microchip Technology Inc
1N4531UR-1 DIODE GEN PURP 75V 125MA DO213AA
1N4531UR-1 ECAD Model
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VPT Components
JAN1N4531 Diode Switching 100V 0.2A 2-Pin DO-34 - Bulk (Alt: JAN1N4531)
JAN1N4531 ECAD Model
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VPT Components
JAN1N4531UR Diode Switching 100V 0.2A 2-Pin DO-213AA - Bulk (Alt: JAN1N4531UR)
JAN1N4531UR ECAD Model
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VPT Components
JANTX1N4531 Diode Switching 100V 0.2A 2-Pin DO-34 - Bulk (Alt: JANTX1N4531)
JANTX1N4531 ECAD Model
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VPT Components
JANTXV1N4531 Diode Switching 100V 0.2A 2-Pin DO-34 - Bulk (Alt: JANTXV1N4531)
JANTXV1N4531 ECAD Model
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VPT Components
JANTX1N4531UR Diode Switching 100V 0.2A 2-Pin DO-213AA - Bulk (Alt: JANTX1N4531UR)
JANTX1N4531UR ECAD Model
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VPT Components
JANTXV1N4531UR Diode Switching 100V 0.2A 2-Pin DO-213AA - Bulk (Alt: JANTXV1N4531UR)
JANTXV1N4531UR ECAD Model
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Philips Semiconductors
1N4531
1N4531 ECAD Model
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VENKEL LTD
CRG0201-N-4531FT RoHS 10/10 Green CR, 0201, 1/20W, 4.53K, �1%
CRG0201-N-4531FT ECAD Model
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Venkel Ltd. CRG0201-N-4531FT Reel 0 7 Weeks, 6 Days 15,000 - - - - - Buy Now

1N4531 datasheet (43)

Part ECAD Model Manufacturer Description Type PDF
1N4531 1N4531 ECAD Model EIC Semiconductor High Speed Switching Diodes Original PDF
1N4531 1N4531 ECAD Model Microsemi Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY Original PDF
1N4531 1N4531 ECAD Model NXP Semiconductors 1N4531 - High-speed diodes - Cd max.: 4 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 25@VR=20V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Original PDF
1N4531 1N4531 ECAD Model Philips Semiconductors High-Speed Diode Original PDF
1N4531 1N4531 ECAD Model Philips Semiconductors High-speed diodes Original PDF
1N4531 1N4531 ECAD Model Philips Semiconductors High Speed Silicon Diodes Original PDF
1N4531 1N4531 ECAD Model ROHM DIODE SWITCHING DIODE 100V 0.15A 2GSD Original PDF
1N4531 1N4531 ECAD Model ROHM COMPUTER DIODE Switching Original PDF
1N4531 1N4531 ECAD Model APD Semiconductor Planar Diodes Scan PDF
1N4531 1N4531 ECAD Model APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
1N4531 1N4531 ECAD Model BKC International 100 V, 500 mW general purpose diode Scan PDF
1N4531 1N4531 ECAD Model Continental Device India DO-35 Switching Diodes (500mW) Scan PDF
1N4531 1N4531 ECAD Model Continental Device India Semiconductor Device Data Book 1996 Scan PDF
1N4531 1N4531 ECAD Model General Diode Silicon Diode Selection Guide Scan PDF
1N4531 1N4531 ECAD Model General Electric Semiconductor Data Handbook 1977 Scan PDF
1N4531 1N4531 ECAD Model General Electric Semiconductor Data Book 1971 Scan PDF
1N4531 1N4531 ECAD Model Microsemi COMPUTER DIODE Switching Scan PDF
1N4531 1N4531 ECAD Model Motorola Motorola Semiconductor Datasheet Library Scan PDF
1N4531 1N4531 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N4531 1N4531 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF

1N4531 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
in4447

Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Text: 4 d035 38 1N4454* 75 100 50 1.00 10 2 ItÉlËÊSÊ d035 38 1N4531 * 100 25 20 1.00 10 4 4 d034 39 , two packages). r—-j 1N914,AtB 1N916,A,B 1N4148,49 1N4154 1N4446-49 1N4531 1N4536 PLANAR EPITAXIAL PASSIVATED with Controlled Conductance MILU-HEATSINK DIODE (MHD) 1N4531 , 1N4536 DOUBLE HEATSINK , 1N4448 1N4531 1N916 1N916A 1N916B 1N4149 1N4447 1N4449 1N4S36 1N4154 Reverse Recovery Time of 2 , 1N4536 1N916, A, B 1N4446-49 1N4148, 49 1N4531 absolute maximum ratings: (25°C) (unless otherwise


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PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4447 IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148
2005 - 1N4532

Abstract: 1N4531
Text: 1N4531 ~ 1N4532 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : · High switching speed , Electrical Characteristics (Tj = 25°C unless otherwise noted) Parameter Symbol 1N4531 IR Reverse , VR = 50 V VF 1N4531 1N4532 VR = 50 V , Tj = 150 °C IF = 10 mA Cd f = 1MHz ; VR = 0 , 4 2 ns ns pF IF = 10 mA to IR = 60mA Reverse Recovery Time Page 1 of 2 1N4531 , CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS FORWARD CURRENT AS A FUNCTION


Original
PDF 1N4531 1N4532 DO-34 1N4532 1N4531
1N4532

Abstract: 1N4531
Text: 1N4531 , 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531 , 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr


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PDF 1N4531, 1N4532 150oC 100mA, 1N4532 1N4531
1N4148-1N4148-1

Abstract: 1N4148 1N4148 JANTXV 1N4148-1 1N4531 JANTX 1N914 1N4148-1 JANTXV 1N4148-1 JANTX 1n4148 general diode 1N4148-1 JAN
Text: compi jtfr ninnE 1n914; jan, jantx 1n914 uuiviru i cr uiul/c. 1n4148; jan, jantx, jantxv 1n4148 General Purpose jan, jantx, jantxv 1n4148-1 Switching 1n4531 ; jan, jantx, jantxv 1n4531 FEATURES â , . 200mAdC 1N4148-1 . 200mAdc 1N4531 , , JTXV 1N4531 J. ITX & JTXV 1N4531 J, JTX 1N914 INCHES MILLIMETERS INCHES MILLIMETERS A 050- 065 , , JTXV 1N4148-1N4148-1 1N4531 ; J, JTX, JTXV 1N4531 Reverse Current @25°C Reverse Current @25°C Peak


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PDF 1n914; 1n914 1n4148; 1n4148 1n4148-1 1n4531; 1n4531 MIL-S-19500/116 DO-34 DO-35 1N4148-1N4148-1 1N4148 JANTXV JANTX 1N914 1N4148-1 JANTXV 1N4148-1 JANTX 1n4148 general diode 1N4148-1 JAN
2000 - 1N4148

Abstract: 1N4150 1N4448 1N4531
Text: 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 , High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. Features 1) Glass sealed envelope. (MSD , ) 1N4531 100 75 450 150 200 2 500 200 -65~+200 -65~+200 1N4148 100 , 30mA 50mA @ @ @ 100mA 200mA 250mA 1N4531 @ 5µA 75 @ 100µA 100 1.0 75 , 50.0 20 4 4 1.0 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Electrical characteristic


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PDF 1N4531 1N4148 1N4150 1N4448 1N4531 DO-34 1N4448
jx4148

Abstract: J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1
Text: , 1N4148UBCD, 1N4531 , AND 1N4531UR , JAN, JANTX, JANTXV, JANHC, AND JANKC JANS1N4148-1 (see 6.4). Device , . Semiconductor device, diode, types 1N914, 1N4148-1, and 1N4531. 3 MIL-PRF-19500/116L Symbol , , 1N4148UR-1, AND 1N4531UR. 4 MIL-PRF-19500/116L 1 3 2 1N4148UBCA 1 1N4148UB 2 3 1 , VRWM = 75 V (pk) f = 50 - 60 Hz IO = 75 mA 1N4531 , 1N4531UR IO = 125 mA IF = 175 mA min , , 1N4148UB, 1N4148UB2, 1N4148UBR2, 1N4531 , AND 1N4531UR , JAN, JANTX, JANTXV, JANHC, AND JANKC 4. NATURE OF


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PDF MIL-PRF-19500/116L MIL-PRF-19500/116K 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, jx4148 J4148 JX-4148 JV4148 1n914 surface mount diode 1N4148-1UR DIODE 1n4148 1N4148 JANTXV 1N4148-1 JANS 1N4148-1
2000 - 1N4148

Abstract: 1N4531 1N4448 1N4150 1N4148 ROHM ROHM 1N4531 do-34 rohm
Text: 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Switching diode 1N4531 / 1N4148 / 1N4150 / 1N4448 , High-speed switching 1N4531 CATHODE BAND (BLACK) Type No. Features 1) Glass sealed envelope. (MSD , ) 1N4531 100 75 450 150 200 2 500 200 -65~+200 -65~+200 1N4148 100 , 30mA 50mA @ @ @ 100mA 200mA 250mA 1N4531 @ 5µA 75 @ 100µA 100 1.0 75 , 50.0 20 4 4 1.0 1N4531 / 1N4148 / 1N4150 / 1N4448 Diodes Electrical characteristic


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PDF 1N4531 1N4148 1N4150 1N4448 1N4531 DO-34 1N4448 1N4148 ROHM ROHM 1N4531 do-34 rohm
IN4531

Abstract: IN4532 1N4532 1N4531
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531 ; 1N4532 High-speed , 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531 , 1N4532 , diodes 1N4531 ; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL , Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 GRAPHICAL DATA


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 IN4531 IN4532 1N4531
1N4531

Abstract: 1N4534 1N4536
Text: 1N4531 1N4534 1N4532 1N4536 1N4533 These diodes are in a glass sealed envelope and are suitable , general rectification Cathode band color and marking Part no. 1N4531 1N4532 1N4533 1N4534 1N4536 , 2 2 2 P (mW) 500 500 500 500 500 1N4531 1N4532 1N4533 1N4534 1N4536 100 75 40 75 35 75 , -65 - +200 -6 5 -+ 2 0 0 -65 - +200 Diodes n o H in o o 63 1N4531 ,1N4532,1N4533 , V Vr (V) VR = 0 lF = 10 mA f * 1 MHz RL= io o n 1N4531 o 75 100 0.025 20 50.0 5.0 75


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PDF 1N4531 1N4534 1N4532 1N4536 1N4533 DO-34 1N4533
2008 - Switching Diodes

Abstract: 1N4532 1N4531
Text: TH97/10561QM 1N4531 ~ 1N4532 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : · High switching speed: max. 4 ns 1.00 (25.4) min , 100 ; Measured at I R = 1 mA 1N4531 IR Reverse Current 1N4532 Forward Voltage Diode Capacitance Reverse Recovery Time Page 1 of 2 Test Condition 1N4531 1N4532 1N4531 1N4532 Min , /1033 RATING AND CHARACTERISTIC CURVES ( 1N4531 ~ 1N4532 ) FIG. 1 MAXIMUM PERMISSIBLE CONTINUOUS


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PDF TH97/10561QM 1N4531 1N4532 TW00/17276EM TH07/1033 DO-34 Switching Diodes 1N4532 1N4531
PJ 949 diode

Abstract: No abstract text available
Text: bbSBiai ooeb'iob m N AMER PHILIPS/DISCRETE « apx bSE 1N4531 1N4532 D , miniature assemblies e.g. as protection diodes in reed relays, etc. QUICK REFERENCE D A T A 1N4531 , b b s a ^ i oo2bio? 'isa « 1N4531 1N4532 N AMER PHILIPS/DISCRETE y apx bTE v RATINGS Lim iting values in accordance w ith the Absolute Maximum System (IEC 134) 1N4531 Continuous , parasitic capacitance) 1N4531 Reverse recovery tim e when switched from: 1N4532 I p = 10 m A t o I


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PDF 1N4531 1N4532 DO-34 PJ 949 diode
1N4532

Abstract: 1N4531
Text: 1N4531 , 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 75 , 1N4531 1N4532 1N4531 1N4532 IR IR IR IR 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd 4 2 pF pF 1N4531 1N4532 1N4532 trr trr trr 4 2 4 ns ns ns Vfr


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PDF 1N4531, 1N4532 DO-34 1N4531 1N4532 1N4531
Not Available

Abstract: No abstract text available
Text: C O M P U T E R n iO D F I r U I V ir U I t l \ V tV J U C . 1N914; JAN, JANTX 1N914 1N4148; JAN, JANTX, JANTXV 1N4148 ja n , j a n t x , j a n t x v 1N4148-1 1N4531 ; JAN, JANTX, JANTXV 1N4531 , , JTXV 1N4148-1 J, JTX, JTXV 1N4531 DO-35 1N914 1N4148 DO-34 1N4S31 A f II 11 -— _L B— * h°-T J, JTX & JTXV 1N4531 A B C D INCHES .050-.065 080-.120 1.0 M IN , / / The diode experts 1N914; J, JTX 1N914 J, JTX, JTXV 1N4148-1N4148-1 1N4531 ; J, JTX, JTXV 1N4531


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PDF 1N914; 1N914 1N4148; 1N4148 1N4148-1 1N4531; 1N4531 MIL-S-19500/116 DO-34 DO-35
1N4532

Abstract: 1N4531
Text: 1N4531 , 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531 , 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA µA µA 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr


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PDF 1N4531, 1N4532 150oC 100mA, tr30ns 1N4532 1N4531
2009 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 1N4531 ; 1N4532 High-speed diodes , sheet High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531 , 1N4532 are high-speed switching diodes fabricated in , = 25 °C 2 mW NXP Semiconductors Product data sheet High-speed diodes 1N4531 , Sep 03 3 NXP Semiconductors Product data sheet High-speed diodes 1N4531 ; 1N4532


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156
1999 - in4531

Abstract: 1N4532 1N4531 IN4532
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531 ; 1N4532 High-speed , Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531 , 1N4532 are high-speed switching diodes , Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 ELECTRICAL , High-speed diodes 1N4531 ; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156 in4531 1N4531 IN4532
I1N4148-1

Abstract: MR 4011 hall IC 44E 11N4148-1 1N414S-1 ic 4081 pin diagram 1N914/1N4148 AD3247 1N4148-1 JANS zc 5094
Text: . Semiconductor device, diode, types 1N914. 1N4148-1. and 1N4531. 4 MIL SPECS 44E D ■0000125 003247b b , superseded by MIL-S-19500/578 | I JANS16642 (see 6.3 and 6 3.1) Device types 1N914| | and 1N4531 are , 0 46 I 0 56 Mr 1 2. 6 i 1 1 | 1N4531 1 G I I I .080 I I 120 I 2 03 | 3 05 |1, 1 2 I 1 1 1 1 I I I , . Ferrule is optional on types 1N4148-1 and 1N4531 for dimension G. 6. The specified lead diameter applies in the zone between .050 (1.27 dm) for 1N914, and 1N4148-1, and .010 (0.25 «■) for 1N4531 froÂ


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PDF MIL-S-19500/116J MIL-S-19500/116H 1NA531 MIL-S-19500/578 JANS16642 1N914| 1N4531 MIL-S-19500/578. 1N4148-1 1N6638 I1N4148-1 MR 4011 hall IC 44E 11N4148-1 1N414S-1 ic 4081 pin diagram 1N914/1N4148 AD3247 1N4148-1 JANS zc 5094
1N4532

Abstract: 1N4531
Text: 1N4531 , 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings (Ta = 25oC) Symbol 75 V 200 mA IFRM Repetitive Peak Forward Current V IF , 1N4531 , 1N4532 Characteristics at Tj = 25oC Symbol Min. Typ. Max. Unit VF - - 1000 mV 1N4531 1N4532 1N4531 1N4532 IR IR IR IR - - 25 100 50 100 nA nA A A 1N4531 1N4532 Cd Cd - - 4 2 pF pF 1N4531 1N4532 1N4532 trr trr


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PDF 1N4531, 1N4532 150oC 100mA, tr30ns 1N4532 1N4531
JANTX 1N4148-1

Abstract: 1N4148 JTX 1N4148-1 JAN 1N4148-1 JANTX 1N4148 JAN 1N4148 JANTX LM 1n4148 1N4531
Text: a n t x , j a n t x v 1N4148-1 1N4531 ; JAN, JANTX, JAN TXV 1N4531 1N914= JA N JANTX1N914 , 1N4531 . 1 25 m A d c Surge Current , 1N4148-1 J, JTX, JTXV 1N4531 A DO-34 1N4531 DO-35 1N914 1N4148 J, JTX & JTXV 1N4531 A B C D IN , Peak Reverse Current @ 25*C 1N914; J. JTX 1N914 J, JTX. JTXV 1N4148-1N4148-1 1N4531 ; J, JTX. JTXV 1N4531 Reverse Current @ 150*0 Reverse Current @ 190*C Reverse Current @25*C 25nAdc @ 0.5/iAdc


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PDF 1N4148; 1N4148 1N4148-1 1N4531; 1N4531 1N914= JANTX1N914 DO-34 DO-35 M1-CS40 JANTX 1N4148-1 1N4148 JTX 1N4148-1 JAN 1N4148-1 JANTX 1N4148 JAN 1N4148 JANTX LM 1n4148 1N4531
1N4532

Abstract: IN4532 S0068 1N4531 IN4531 IR 10D DIODE
Text: Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES â , current: max. 450 mA. DESCRIPTION The 1N4531 ,1N4532 are high-speed switching diodes fabricated in planar , CHARACTERISTICS Tj = 25 °C; unless otherwise specified. 1N4531 ; 1N4532 SYMBOL PARAMETER CONDITIONS MIN. MAX , High-speed diodes 1N4531 ; 1N4532 GRAPHICAL DATA 300 'f (mA) 200 100 MBG4S0 , Product specification High-speed diodes 1N4531 ; 1N4532 10J (HA) 102 10 10" 10- 100 Tj <°C


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PDF 1N4531; 1N4532 DO-34) 1N4531 1N4532 IN4532 S0068 IN4531 IR 10D DIODE
Not Available

Abstract: No abstract text available
Text: Applications • general rectification Cathode band color and marking Color Marking 1N4531 Black , Vrm (V) V r (V) 1N4531 100 75 450 150 200 1N4532 75 50 450 150 , dissip­ ation Peak reverse voltage 63 1N4531 ,1N4532,1N4533,1N4534,1N4536 Switching diodes , ) Part no. 00.1 mA « e e e 0.25 1 mA 2 mA 5 mA mA 1N4531 O 10 mA e 20 mA o , – Switching diodes 1N4531 ,1N4532,1N4533,1N4534,1N4536 FORWARD CURRENT ; If (mA) Figure 3 Figure 4


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PDF 1N4532 1N4533 1N4534 1N4536 DO-34 1N4531
2009 - 1N4532

Abstract: 1N4531 IN4531 IN4532
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 1N4531 ; 1N4532 High-speed , Product data sheet High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531 , 1N4532 are high-speed switching diodes , NXP Semiconductors Product data sheet High-speed diodes 1N4531 ; 1N4532 ELECTRICAL , diodes 1N4531 ; 1N4532 GRAPHICAL DATA MBG450 300 MBG458 600 handbook, halfpage


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156 1N4531 IN4531 IN4532
in4531

Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531 ; 1N4532 High-speed , 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531 , 1N4532 , specification High-speed diodes 1N4531 ; 1N4532 ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise , Apr 03 3 Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 in4531 IN453 1N4531 IN4532 DO-34
DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Text: 4 d035 38 1N4454* 75 100 50 1.00 10 2 ItÉlËÊSÊ d035 38 1N4531 * 100 25 20 1.00 10 4 4 d034 39 , two packages). r—-j 1N914,AtB 1N916,A,B 1N4148,49 1N4154 1N4446-49 1N4531 1N4536 PLANAR EPITAXIAL PASSIVATED with Controlled Conductance MILU-HEATSINK DIODE (MHD) 1N4531 , 1N4536 DOUBLE HEATSINK , 1N4448 1N4531 1N916 1N916A 1N916B 1N4149 1N4447 1N4449 1N4S36 1N4154 Reverse Recovery Time of 2 , 1N4536 1N916, A, B 1N4446-49 1N4148, 49 1N4531 absolute maximum ratings: (25°C) (unless otherwise


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PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 DIODe IN4446 in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
2009 - Not Available

Abstract: No abstract text available
Text: Silicon Zener Diode Series 1N4531 Features · · · · Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 Metallurgically Bonded Hermetically Sealed Double Plug Construction Maximum Ratings @ 25°C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Surge Current B, square 8.3mS: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +200°C 1.0 A 0.704 A , -Maximum 4 2.8 5 20 5 Revision Date: 11/4/2009 New Product 1 1N4531 Outline Drawing LEADED


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PDF 1N4531 MIL-PRF-19500/116 500mW 125mA,
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