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Part Manufacturer Description Datasheet Download Buy Part
1N4454 Microsemi Corporation Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
1N4454-1 Microsemi Corporation Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,
1N4454-TR Vishay Semiconductors DIODE GEN PURP 75V 150MA DO204AH
1N4454-TAP Vishay Semiconductors DIODE GEN PURP 75V 150MA DO204AH
1N4454 TR Central Semiconductor Corp DIODE GEN PURP 75V 150MA DO35
JANTXV1N4454UR-1 Microsemi Corporation Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA,
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1N4454 National Semiconductor Corporation Bristol Electronics 4,000 - -
1N4454 ON Semiconductor Avnet 200,128 $0.10 $0.01
1N4454 ON Semiconductor Farnell element14 1,589 £0.08 £0.03
1N4454 ON Semiconductor element14 Asia-Pacific 3,646 $0.13 $0.01
1N4454 ON Semiconductor Chip1Stop 123,473 $0.02 $0.01
1N4454 ON Semiconductor Chip1Stop 8 $0.03 $0.03
1N4454 ON Semiconductor Chip1Stop 47,623 $0.03 $0.01
1N4454 Fairchild Semiconductor Corporation Bristol Electronics 1,000 - -
1N4454 National Semiconductor Corporation Bristol Electronics 1,000 $0.04 $0.03
1N4454 ON Semiconductor Avnet - $0.10 $0.01
1N4454 ON Semiconductor Newark element14 1,564 $0.10 $0.01
1N4454 ON Semiconductor Newark element14 40,000 $0.10 $0.01
1N4454 NTE Electronics Inc Newark element14 291 $0.03 $0.03
1N4454 Unknown Bristol Electronics 18 - -
1N4454 ON Semiconductor Future Electronics - $0.03 $0.01
1N4454 ROHM Semiconductor Bristol Electronics 5,000 $0.04 $0.01
1N4454 . Bristol Electronics 280 $0.04 $0.04
1N4454 Fairchild Semiconductor Corporation Rochester Electronics 230,550 $0.02 $0.02
1N4454 BK Central Semiconductor Corp Avnet - $0.03 $0.03
1N4454 TR Central Semiconductor Corp Avnet - $0.03 $0.03
1N4454-TAP Vishay Intertechnologies Avnet - $0.05 $0.04
1N4454-TAP Vishay Intertechnologies Avnet - $0.05 $0.04
1N4454-TR Vishay Intertechnologies Avnet - $0.05 $0.04
1N4454-TR Vishay Intertechnologies Avnet - $0.05 $0.04
1N4454-TR Vishay Intertechnologies Chip1Stop 49,628 $0.15 $0.07
1N4454.TR Fairchild Semiconductor Corporation Chip One Exchange 9,972 - -
1N4454TR National Semiconductor Corporation Bristol Electronics 8,000 - -
1N4454TR ON Semiconductor Farnell element14 6,505 £0.08 £0.03
1N4454TR ON Semiconductor element14 Asia-Pacific 6,495 $0.07 $0.01
1N4454TR ON Semiconductor Avnet - $0.02 $0.01
1N4454TR ON Semiconductor Future Electronics - $0.03 $0.02
1N4454TR ON Semiconductor Newark element14 6,495 $0.11 $0.02
1N4454TR Fairchild Semiconductor Corporation Bristol Electronics 9,000 - -
1N4454TR Fairchild Semiconductor Corporation Rochester Electronics 149,900 $0.02 $0.02
1N4454UR-1 Microsemi Corporation Chip1Stop 3,778 $3.52 $1.79
1N4454UR-1JAN Microsemi Corporation Chip1Stop 250 $3.06 $2.56
JAN1N4454-1 Microsemi Corporation New Advantage Corporation 2,946 $0.86 $0.81
JAN1N4454-1 Microsemi Corporation Future Electronics 2,948 $0.60 $0.58
JAN1N4454-1 Cobham Semiconductor Solutions Avnet - $2.39 $2.19
JAN1N4454-1 Microsemi Corporation Chip1Stop 2,737 $2.20 $0.63
JAN1N4454UR-1 Microsemi Corporation Future Electronics - $2.60 $2.10
JANTX1N4454 . Bristol Electronics 4,500 $2.10 $0.69
JANTX1N4454 Microsemi Corporation Bristol Electronics 9,557 $2.10 $0.69
JANTX1N4454-1 Microsemi Corporation Future Electronics 85,225 $1.40 $1.11
JANTX1N4454-1 Microsemi Corporation Chip1Stop 82,801 $4.12 $1.17
JANTX1N4454-1 Microsemi Corporation New Advantage Corporation 2 - -
JANTX1N4454-1 Microsemi Corporation New Advantage Corporation 85,223 $2.00 $1.87
JANTX1N4454UR-1 Microsemi Corporation New Advantage Corporation 6,231 $4.23 $3.95
JANTX1N4454UR-1 Microsemi Corporation Future Electronics 6,233 $2.96 $2.37
JANTX1N4454UR-1 Microsemi Corporation Chip1Stop 15,542 $4.41 $2.24
JANTXV1N4454-1 Microsemi Corporation Future Electronics - $3.46 $2.77
JANTXV1N4454UR-1 Microsemi Corporation New Advantage Corporation 134 $5.04 $4.71
JANTXV1N4454UR-1 Microsemi Corporation Chip1Stop 12 $7.92 $5.61

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1N4454 datasheet (94)

Part Manufacturer Description Type PDF
1N4454 Chenyi Electronics SMALL SIGNAL SWITCHING DIODE Original PDF
1N4454 DC Components TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES Original PDF
1N4454 Diodes Silicon Switching Diode Original PDF
1N4454 EIC Semiconductor High Speed Switching Diodes Original PDF
1N4454 Fairchild Semiconductor High Conductance Ultra Fast Diode Original PDF
1N4454 Fairchild Semiconductor High Conductance Ultra Fast Diode Original PDF
1N4454 General Semiconductor SMALL SIGNAL DIODE Original PDF
1N4454 Good-Ark SILICON EPITAXIAL PLANAR DIODES Original PDF
1N4454 Micro Commercial Components DIODE ULTRA FAST RECOVERY RECTIFIER 75V 0.15A 2DO-35 Original PDF
1N4454 Micro Commercial Components 400mW 75 Volt Silicon Epitaxial Diode Original PDF
1N4454 Microsemi Silicon Switching Diode DO-35 Glass Package Original PDF
1N4454 Microsemi Signal or Computer Diode Original PDF
1N4454 Rectron Semiconductor SIGNAL DIODE Original PDF
1N4454 Taitron Components Rectifier Diode, Switching Diode, Single, 75V, SOD-27|SOD-68, 2-Pin Original PDF
1N4454 APD Semiconductor Planar Diodes Scan PDF
1N4454 BKC International 50 V, 500 mW ultra fast low capacitance diode Scan PDF
1N4454 Capar High Speed Switching Diodes Scan PDF
1N4454 Central Semiconductor Scan PDF
1N4454 Crimson Semiconductor SILICON DIODES Scan PDF
1N4454 Diodes High Voltage Rectifiers / Diodes Scan PDF

1N4454 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: DO-35 1N4454 MECHANICAL SPECIFICATIONS J & JTX 1N3064 J. JTX & JTXV 1N4454 & 1N4454-1 J, JTX & , , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 U IK J U L . General Purpose , . 75mA 1N4532 , . 0.5A 1N4454.-1. 1A , 1N4454-1 1N4532 Reverse Current @ is o ' c Reverse Current @ 25°C Reverse Breakdown


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PDF 1N3064 1N4454; 1N4454 1N4454-1 1N4532; 1N4532 1N3064. 1N4454 200mA 1N4532.
1997 - 1N4454

Abstract: MMBD1201-1205 ULTRA FAST DIODE
Text: 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted , , Junction to Ambient ©1997 Fairchild Semiconductor Corporation Max Units 1N4454 500 3.33 300 mW mW/°C °C/W 1N4454 Discrete POWER & Signal Technologies (continued) Electrical , pF 4.0 nS 1N4454 High Conductance Ultra Fast Diode Fairchild Semiconductor


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PDF 1N4454 DO-35 MMBD1201-1205 1N4454 ULTRA FAST DIODE
2004 - Not Available

Abstract: No abstract text available
Text: LivePerson l l l l Submit ¡ ¡ ¡ 1N4454 Availability Buy 1N4454 at our online store ! 1N4454 Information Cate gory » Diodes Class » High -Speed/Fast Recovery Diodes Type » General Purpose 1N4454 Specifications Milita ry/High-R e l : N I(O ) Max .(A) O utput C urre nt : 150m V(R R


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PDF 1N4454 DO-35
Not Available

Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies t _8 i iHAfrltAif Ï ¡p^j. ;S £~!M i O D N P U C ' T O R 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M , e rw ise noted Characteristic Max Units 1N4454 Pd R e jA Total Device Dissipation , c to r C o r p o r a tio n 500 3.33 300 mW m W /°C °C/W 1N4454 iffy (continued , 4.0 4.0 nA uA mV mV mV V PF nS 1N4454 High Conductance Ultra Fast Diode


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PDF 1N4454 DO-35 BD1201-1205
1996 - 1N4454

Abstract: Ultra fast diode 1N445
Text: 1N4454 Discrete POWER & Signal Technologies N 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 50 V IO Average , °C Thermal Resistance, Junction to Ambient Max Units 1N4454 500 3.33 300 mW mW/°C °C/W , µA mV mV mV V pF 4.0 nS 1N4454 High Conductance Ultra Fast Diode National


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PDF 1N4454 DO-35 1N4454 Ultra fast diode 1N445
1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Fairchild Device 1N4447 1N4448 1N3070 1N3070 1N4448 1N4448 1N4448 1N4148 1N4148 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4148 1N4454 1N4454 1N4448 1N4148 1N4148 1N4148 1N4148 1N3070 1N3070 1N4148 1N4148 1N4148 1N4148 1N4454 1N4148 1N5229B 1N4148 1N4448 1N4148 1N4938 1N4938 1N4454 1N4730A 1N4732A Industry Part Number Recommended Fairchild Device Industry Part , 1N4752A 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4454 1N4148


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PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
1N4532

Abstract: 1N3064 JANTX 1N3064
Text: RATINGS, AT 25°C JA N N4454; JAN, JANTX && JANTXV 1N4454 jan, ja n tx & ja n tx v 1N4454-1 1N4532; JAN , o o n c < 3pF Forward Recovery Voltage Forward Recovery Time Type 1N3064 1N4454 1N4454-1 1N4532 , 1N3064 J, JTX & JTXV 1N4454 & 1N4454-1 J, JTX & JTXV 1N4532 J, JTX S. JTXV 1N4532 D INCHES A B C D .05 , .50V Average Output Current, 1 N 3 0 6 4 .75mA 1N4454.-1. , . 0.5A 1N4454.-1. 1A 1N4532


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PDF N4454; 1N4454 1N4454-1 1N4532; 1N4532 200mA 125mA 1N3064 1N4532 JANTX 1N3064
1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4153 1N4154 MHD618 in4454 Scans-00103068 1N4151
Text: Silicon Diodes 1N4154 SEE PAGE 205 r-—I 1N4151,2,3 1N4454 1N4532,3,4 This family of , (DHD) 1N4151-1N4153 1N4454 0 022 0 018 M 0.155 " 140 0 180 MAX -1.250 — -1 1 1 t 0 075 0060 1 , air Derate: 2.85mW/°C for temp, above 25°C amb. based on max. T, = 200°C FEATURES 1N4151 1N4454 , Forward Surge (1 /¿sec. pulse) Power Dissipation Temperature Operating Storage 1N4454 1N4532 50 , ., source impedance = 10 ohms. 263 I 1N4151, 2, 3 1N4454 1N4532, 3, 4 6,000 [-4,000 1- 1,000 -800


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PDF 1N4154 1N4151 1N4454 1N4532 JS-2-65-11 1N4151, 1N4532, 1N4151 equivalent Diode Equivalent 1n4151 1N4152 1N4153 MHD618 in4454 Scans-00103068
IN3064

Abstract: in4454 1N4454 diode in3064 1N3064 1N4532 diode 1n4454 1N4454-1 JANTX1N3064
Text: , JTX & JTXV 1N4454 & 1N4454-1 J, JTX & JTXV 1N4532 j, jtx s. jtxv 1n4532 I -C—| inches , General Purpose jan, jantx & jantxv 1n4454-1 Switching 1n4532; jan, jantx & jantxv 1n4532 ABSOLUTE , , 1N3064.75mA 1N4454.-1.200mA 1N4532 .125mA , 1N4454.-1.1A 1N4532 . 0.5A Operating Temperature Range , 4.96-7.62 C 1.0 MIN - 1.5 MAX. 24.0 MIN.-38.1 MAX, D .018.022 .46-.56 j, jtx t jtxv 1n4454.-1 inches


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PDF JANTX1N3064 1n4454; 1n4454 1n4454-1 1n4532; 1n4532 1N3064. 1N4454 200mA IN3064 in4454 diode in3064 1N3064 1N4532 diode 1n4454 1N4454-1 JANTX1N3064
Not Available

Abstract: No abstract text available
Text: 1N4454 CT j ES. tI S ^ U9 S I I I 1""4 S ' S S M ÎC O N D Ü O T O H Discrete POW ER & Signal Technologies 1N4454 DO-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See M M BD1201-1205 for characteristics. Absolute Màximum RâtinÇjS Symbol W IV lo T A = 2 5°C unless o th e rw , above 25°C Thermal Resistance, Junction to Ambient Max 1N4454 500 3.33 300 Units mW m W /°C °C/W 1N4454 High


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PDF 1N4454 DO-35 BD1201-1205
1N3064

Abstract: 1N4454 1N4305
Text: B K C INTERNATIONAL ULTRA FAST LOW CAPACITANCE DIODES □ BE D J 1171103 □□□QEÛD b T-Ô3- av 1N3064 1N4305 1N4454 ABSOLUTE MAXIMUM RATINGS • Tm 4.0 ns @ lF = 10 mA, lH = 10 mA, V„ = 1.0 V • B„ 75 V (MIN) •C 2.0 pF @ VR = 0, f = 1.0 MHz Temperatures Storage Temperature Range , nA 1N3064, 1N4454 1.0 V lf = 10 mA 1N4305 0.70 0.85 V lf = 10 mA lr Reverse Current 0.1 ha VR , 1N3064, 1N4305, 1N4454 4.0 ns V„ = 1.0V C Capacitance 2.0 pf V„ = 0, f = 1.0 MHz RE Rectification


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PDF 1N3064 1N4305 1N4454 1N3064, 1N4305 1N4305, 1N4454
2010 - 1N4454

Abstract: No abstract text available
Text: / 1n4454.html 4/12/2010 American Microsemiconductor , 1N4454 Small Signal Switching Diode. Peak Reverse Voltage VRM = 75 V. Maximum . Page 1 of 1 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 1N4454 1N4454 Small Signal Switching Diode. Peak Reverse Voltage VRM = 75 V. Maximum , Manufacturer Partnumber: List Price: Our Price: You Save: 1N4454 $ 0.47 Information Spec Sheets Tutorials


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PDF 1N4454 1N4454 DO-35 com/1n4454
Not Available

Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward , C - 2.0 RE 45 Forward voltage VF 1N3064 1N4454 1N4305 Reverse current Breakdown voltage Reverse recovery time 1N4305 1N3064 1N4305 1N4454 V IF = 2.0mA IF = 1.0mA IF , SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MECHANICAL CHARACTERISTICS Case DO


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PDF 1N3064, 1N4305, 1N4454 DO-35 MIL-PRF-19500,
1N4454

Abstract: No abstract text available
Text: 1N4454 SILICON SWITCHING DIODE Features · · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version (LL4454) T D DO-35 Dim A B C D Min 25.40 - - - Mechanical Data_ Case: D O -35, Plastic Leads: Solderable per M , (Note 1) Operating and Storage Temperature Range @ t < 1.0s @ t = 1 .O^s 1N4454 75 300 150 1.0 2.0 , provided that leads are kept at ambient temperature. DS12016 Rev. E 1 of 1 1N4454


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PDF 1N4454 LL4454) DO-35 IL-STD-202, 1N4454 DS12016
2000 - 1N4454

Abstract: LL4454
Text: 1N4454 SILICON SWITCHING DIODE Features · · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version (LL4454) B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD , Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol 1N4454 Unit , are kept at ambient temperature. DS12016 Rev. F-2 1 of 1 1N4454 Diodes


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PDF 1N4454 LL4454) DO-35 DO-35, MIL-STD-202, DS12016 1N4454 LL4454
Not Available

Abstract: No abstract text available
Text: 1N4454 Discrete POWER & Signal Technologies N at ion al Semiconductor 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. Absolute Maximum Ratings* ta=25° ulesohrwentd c n s t e is oe P aram eter S ym bol V alu e Units W iv Working Inverse Voltage 50 V lo Average Rectified Current 200 mA If DC Forward Current 400 mA , nS 1N4454 High Conductance Ultra Fast Diode


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PDF 1N4454
in4454

Abstract: 1N3064
Text: 1N4454 ; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV , . 75mA 1N4454.-1. 200mA , . 0.5A 1N4454.-1. 1A 1N4532 , = lOmAdc R l= 1000 c< 3 p F Forward Recovery Voltage Forward Recovery Time Type 1N3064 1N4454 1N4454-1 1N4532 Capacitance 2pF ® Vn = OVdc f = 1MHz Vdg * 50mV (pktopk) Forward Voltage l.OVdc ® If


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PDF 1N3064 1N4454; 1N4454 1N4454-1 1N4532; 1N4532 1N3064 200mA 1N4532. in4454
2001 - Not Available

Abstract: No abstract text available
Text: www.cnelectr.com 1N4454 0+ #+ ' ' , ) / / www.cnelectr .com 1N4454 - 0+ ) #+ 4 " ' ' - -


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PDF 1N4454
2003 - Not Available

Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR Data Sheet 4231, Rev. 1N4454-G FAST SWITCHING DIODE Green Products Features ! ! ! ! Fast Switching Speed Glass Package Version for High Reliability A High Conductance , Directive B A D 1N4454-G Mechanical Data ! ! ! ! ! Case: DO-35, MiniMELF Terminals: Plated Leads , Symbol VFM IRM Cj trr Min - - - Max 1.0 100 100 2.0 Unit V nA µA pF ns 1N4454-G FAST SWITCHING , SEMICONDUCTOR Data Sheet 4231, Rev. ­ 1N4454-G FAST SWITCHING DIODE Green Products DISCLAIMER: 1


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PDF 1N4454-G DO-35, MIL-STD-202, DO-35
1N4454

Abstract: 1N3064 DSAIH0002547
Text: - aq 1N3064 1N4305 1N4454 3L .0 0 2 * MRH DIR Temperatures DO-35 PACKAGE Power Dissipation , , 1N4454 1N4305 lR Bv Reverse Current Breakdown Voltage Reverse Recovery Time 1N4305 75 2.0 0.70 0.710 , , 1N4454 C RE AVF/ °c Capacitance Rectification Efficiency Forward Voltage Temperature Coefficient 45


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PDF 1N3064 1N4305 1N4454 DO-35 1N3064, 1N4454 1N4305, DSAIH0002547
1N4444

Abstract: No abstract text available
Text: TYPES 1N430S, 1N4444. 1N4454 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699266, OCTOBER 1 9 6 6 -R E V IS E D AUGU ST 1969 FA ST SW IT C H IN G D IO D E S · Rugged Double-Plug Construction Electrical Equivalents 1N4305 . . 1N3063 . . . 1N4532 1N4454 . 1N3064 m echanical d a ta Double-plug , 1 / 1 6 In ch from C a s e fo r 10 S e c o n d s 75 50 500 - 6 5 to 2 0 0 300 1N 4444 1N4454 75 U N , 0.65 0.71 0.85 0.69 9.85 3 2 2 2 0.82 1 1 0.56 0.68 1N4444 1N4454 M IN M A X M IN MAX 70 0.05 50 0.55


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PDF 1N430S, 1N4444. 1N4454 1N4305 1N3063 1N4532 1N4454 1N3064 1N4305 1N4444
2001 - in4454

Abstract: IN4454-1 1N4454 1N4454-1 D0-35 Case D0-35
Text: · 1N4454 and IN4454-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 1N4454 1N4454-1 · SWITCHING DIODE · HERMETICALLY SEALED · METALLURGICALLY BONDED · DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -55°C to +175°C Storage Temperature: -55°C to +175°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.33 mA/°C Above TA = + 25°C Surge Current A: 1A (pk), Pw , WEBSITE: http://www.cdi-diodes.com E-mail: mail@cdi-diodes.com IN4454 and 1N4454-1 1000 25º C


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PDF 1N4454 IN4454-1 MIL-PRF-19500/144 1N4454 1N4454-1 IN4454 1N4454-1 D0-35 Case D0-35
1N4454

Abstract: No abstract text available
Text: jfeÄ^ßS^ I HiO ï—l I ^ ¡o GSM oijctor Discrete POWER & Signal Technologies 1N4454 Do-35 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units wlv Working Inverse Voltage 50 V lo Average Rectified Current 200 mA If DC Forward Current 400 mA if Recurrent Peak , Characteristic Max Units 1N4454 Pd Total Device Dissipation Derate above 25°C 500 3.33 mW mW/°C Rbja


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PDF 1N4454 Do-35 MMBD1201-1205 1N4454
in4151

Abstract: 1N4532 1N916 1N914B 1N914A 1N914 1N4152 1N4151 1N4149 1n4148 general diode
Text: 4 d035 38 1N4454 * 75 100 50 1.00 10 2 ItÉlËÊSÊ d035 38 1N4531* 100 25 20 1.00 10 4 4 d034 39 , . ble 1 Measured at 5/LtA 119 Silicon Diodes 1N4154 SEE PAGE 205 r-—I 1N4151,2,3 1N4454 , DOUBLE HEATSINK DIODE (DHD) 1N4151-1N4153 1N4454 0 022 0 018 M 0.155 " 140 0 180 MAX -1.250 — -1 , °C FEATURES 1N4151 1N4454 MHD618 1N4532 1N4152 1N4153 IN4533 IN4534 Reverse Recovery Time of ' 4 nanoseconds , 1N4454 1N4532 50 MHD & DHO Units 150 450 200 2000 500 1N4151 MHD618 50 1N4152 1N4533 30 -65 to


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PDF 100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 in4151 1N4532 1N4152 1n4148 general diode
2003 - 1N4454A

Abstract: 1N4454
Text: 1N4454 SILICON SWITCHING DIODE Features · · · · High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version (LL4454) A B A D C Mechanical Data · · · · · Case: DO-35, Plastic Leads: Solderable per MIL-STD-202, Method 208 Marking: Type , VRRM VRWM VR IFM IO IFSM Pd RqJA Tj, TSTG 1N4454 75 300 150 1.0 2.0 400 300 -65 to +175 Unit V mA mA A , Rev. F-2 1 of 1 www.diodes.com 1N4454 ã Diodes Incorporated Diodes


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PDF 1N4454 LL4454) DO-35, MIL-STD-202, DO-35 1N4454 DS12016 1N4454A
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