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1N3883R GeneSic Semiconductor Inc Rectifier Diode, 1 Element, 6A, 400V V(RRM)
1N3883 GeneSic Semiconductor Inc Rectifier Diode, 1 Element, 6A, 400V V(RRM)

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1N3883 Vishay Intertechnologies Avnet 0 $3.99 $3.49
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1N3883 GeneSic Semiconductor Inc Chip1Stop 14 $5.52 $5.17
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1N3883 datasheet (70)

Part Manufacturer Description Type PDF
1N3883 America Semiconductor High Power- Fast Recovery Rectifiers; IF::6A; case_package::DO4 Stud Devices Original PDF
1N3883 GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 400V 6A DO4 Original PDF
1N3883 International Rectifier Original PDF
1N3883 International Rectifier 400V Fast Recovery Diode in a DO-203AA (DO-4) package Original PDF
1N3883 Motorola Fast Recovery Silicon Rectifiers Original PDF
1N3883 Sussex Semiconductor Power Rectifier Devices Original PDF
1N3883 Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
1N3883 America Semiconductor 1N3883 - High Power- Fast Recovery Rectifiers; IF::6A; case_package::DO4 Stud Devices Scan PDF
1N3883 Coors Components Silicon Rectifiers / Fast Recovery Scan PDF
1N3883 Diodes Fast Recovery Rectifier Scan PDF
1N3883 Diodes FAST RECOVERY RECTIFIERS Scan PDF
1N3883 EDAL Industries Silicon Rectifiers, DO-4 Scan PDF
1N3883 EDAL Industries Silicon Rectifier Scan PDF
1N3883 General Diode Fast Recovery Rectifier Scan PDF
1N3883 General Electric Semiconductor Data Book 1971 Scan PDF
1N3883 General Electric Semiconductor Data Handbook 1977 Scan PDF
1N3883 International Rectifier (1N3879 - 1N3889) 6A / 12A AND 16A FAST RECOVERY RECTIFIERS Scan PDF
1N3883 International Rectifier 6 A Fast Recovery Rectifier Scan PDF
1N3883 Iskra Fast Recovery Diodes, 5A, 6A, 20A Scan PDF
1N3883 Microsemi Fast Recovery Rectifier Scan PDF

1N3883 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2004 - Not Available

Abstract:
Text: 1N3879(R) THRU 1N3883 (R) DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 6A High Surge Capability 6Amp Rectifier 50-400 Volts Types Up to 400V V RRM DO-4 B , Number 1N3879(R) 1N3880(R) 1N3881(R) 1N3882(R) 1N3883 (R) Maximum Recurrent Peak Reverse , .1-Typical Forward Characteristics 200 THRU 1N3883 (R) TJ=150 10 TJ=75 1 TJ=25 .1 0 1 , SEMICONDUCTOR CO.,LTD. 1N387(R) Figure .5-GR1 Test Circuit 30 20 THRU 1N3883 (R) D.U.T 30us 20us


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PDF 1N3879 1N3883 1N3880 1N3881 1N3882 1N387
2012 - 1n3881

Abstract:
Text: 1N3879(R) ­ 1N3883 (R) Available on commercial versions FAST RECOVERY RECTIFIERS DESCRIPTION This 1N3879 ­ 1N3883 rectifier device is suitable for applications in DC power supplies, inverters , 400 50 100 200 300 400 200 Unit o 1N3879(R) 1N3880(R) 1N3881(R) 1N3882(R) 1N3883 (R) Repetitive Peak Reverse Voltage 1N3879(R) 1N3880(R) 1N3881(R) 1N3882(R) 1N3883 (R) Maximum Non-Repetitive , 1N3879(R) ­ 1N3883 (R) MECHANICAL and PACKAGING · · · · · · CASE: Hermetically sealed metal and glass


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PDF 1N3879 1N3883 1N3879 T4-LDS-0264, 1n3881 msc stud diode
2012 - msc stud diode

Abstract:
Text: 1N3879(R) ­ 1N3883 (R) Available on commercial versions FAST RECOVERY RECTIFIERS DESCRIPTION This 1N3879 ­ 1N3883 rectifier device is suitable for applications in DC power supplies, inverters , 50 100 200 300 400 200 Unit o 1N3879(R) 1N3880(R) 1N3881(R) 1N3882(R) 1N3883 (R) Repetitive Peak Reverse Voltage 1N3879(R) 1N3880(R) 1N3881(R) 1N3882(R) 1N3883 (R) Maximum Non-Repetitive Sinusoidal Surge , T4-LDS-0264, Rev. 1 (120862) ©2012 Microsemi Corporation Page 1 of 5 1N3879(R) ­ 1N3883 (R


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PDF 1N3879 1N3883 1N3879 T4-LDS-0264, msc stud diode DO-4 Package 1N3881
1N3881

Abstract:
Text: , 1N3881,1N3882and 1N3883. QUICK REFERENCE DATA Repetitive peak reverse voltage VrrM max. Average fonward current Non-repetitive peak forward current Reverse recovery time 1N3879 1N3880 1N3881 1N3882 1N3883 50 , N AMER PHILIPS/DISCRETE DL.E D bbS3T31 0011701 B 1N3879 to 1N3883 FAST SOFT-RECOVERY , Respective Manufacturer N AMER PHILIPS/DISCRETE DbE D ^53^31 0011710 1 1N3879 to 1N3883 r-oè- a , 1N3880 1N3881 1N3882 1N3883 Non-repetitive peak reverse voltage


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PDF bbS3T31 1N3879 1N3883 1N3879, 1N3880, 1N3881 1N3882and 1N3883. 1N3880 1N3883 1N3882
1n400i

Abstract:
Text: Temperature Range vrrm vrwm Vr 1N3879 1N38B0 1N3881 1N3882 IN3863 MR 1386 1N3879 thru 1N3883 MR1366 1N3881 , – b3b72SS OOflbESS 134 1N3879 thru 1N3883 , MR1366 IP10T7 FIGURE 1 - FORWARD VOLTAGE FIGURE 2 - MAXIMUM , /OPTO ) b4E i ■b3b?2SS DDflbS23 070 «MOT? 1N3879 thru 1N3883 , MR1366 SINE WAVE INPUT FIGURE 4 - , TD7 ■HOT? 1N3879 thru 1N3883 , MR1366 TYPICAL DYNAMIC CHARACTERISTICS FIGURE 10 - FORWARD , (DIODES/OPTO) b4E D ■b3b72SS GGfib2S5 ^43 ■MOT? 1N3879 thru 1N3883 , MR1366 FIGURE 16 — JEDEC


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PDF 0Gflb221 1n400i MR1366 IN3863 245A-02 1N3883 1N3882 high power fast recovery diodes 5 ns 1N3881 in4933 diode motorola opto
Not Available

Abstract:
Text: : Normal polarity (cathode to stud): 1N3879,1N3880,1N3881,1N3882 and 1N3883. QUICK REFERENCE DATA 1N3879 , . Reverse recovery time MECHANICAL DATA < 1N3883 400 V 6 A 80 A 200 ns Dimensions , S S ^ l 0011710 ^ 1N3879 to 1N3883 r o -n -s y v RATINGS Limiting values in accordance w ith the Absolute Maximum System (IEC 134) Voltages N3879 1N3880 1N3881 1N3882 1N3883 , /DISCRETE 0011711 0 ■ObE D 1N3879 to 1N3883 Fast soft-recovery rectifier diodes )v r■3


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PDF bbS3T31 3879l 1N3879 1N3880 1N3881 1N3882 1N3883. 1N3879 1N3880 1N3881
1N3882

Abstract:
Text: ,1N3881,1N3882 and 1N3883. QUICK REFERENCE DATA Repetitive peak reverse voltage Vrrm max. 1N3879 1N3880 1N3881 1N3882 1N3883 50 100 200 300 400 V Average forward current 'F(AV) max. 6 A Non-repetitive peak , ^53*131 0011710 1 1N3879 to 1N3883 r-oè- n RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages 1N3879 1N3880 1N3881 1N3882 1N3883 Non-repetitive peak reverse , 1N3883 T-03-/7 1,4 V* mA 200 ns 250 nC dlR/dt| < A/ps f time Fig,2 Definition of trr and Qs


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PDF bbS3T31 1N3879 to1N3883 1N3879, 1N3880 1N3881 1N3882 1N3883. D1N3879 11714-B 1N3883
2005 - 1N3893

Abstract:
Text: . 100 150 200 250 300 350 400 450 1N3881. - 1N3882. 1N3883. 1N3889. - , ) Max. average forward current @ TC = 100°C IF(RMS) Max. RMS current 1N3879. 1N3883. 6FL , . 1N3883. 1N3893. Parameter trr Max. reverse recovery time 6FL. 12FL. Units Conditions 16FL , Mechanical Specification 1N3879. 1N3889. 1N3883. 1N3893. 6FL. 12FL. Parameter TJ Tstg Max , ) 1N3879. 1N3883. 6FL. Conduction angle 1N3889. 1N3893. 12FL. 16FL. Sinusoidal conduction


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PDF 1N3879 1N3889 1N3879- 1N38891N3883 1N3893 1N3879 1N3893 DO-203AA 16FL 1N3880 1N3881 1n3890 diode diode 40 S02 12FL
2015 - Not Available

Abstract:
Text: (1) 9.5 TC maximum 1N3889(R) TO 1N3893(R) 6 (1) IF(RMS) 1N3879(R) TO 1N3883 (R , ) 100 150 200 250 1N3882(R) 300 350 1N3883 (R) 400 450 1N3889(R) 50 , 1N3879(R) TO 1N3883 (R) 9.5 TEST CONDITIONS 180 72 Sinusoidalï€ half wave,ï€ initialï , CHARACTERISTICS TEST CONDITIONS 1N3879(R) TO 1N3883 (R) 1N3889(R) TO 1N3893(R) TJ = 25 °C, IF = 1 A to , CONDITIONS 1N3879(R) TO 1N3883 (R) 1N3889(R) TO 1N3893(R) TJ -65 to +150 Maximum storage


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PDF VS-1N3879 VS-1N3889 DO-203AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Not Available

Abstract:
Text: 1N3883 /R SILICON POWER RECTIFIER- SWITCHING DESCRIPTION: The 1N3883 /R is Designed for General Purpose Fast Switching Power Supply Applications. PACKAGE STYLE DO- 4 · 1N3883 = Cathode to Stud · 1N3883R = Anode to Stud MAXIMUM RATINGS Io IF S M vR W M Tj S T G jj c s Y M B u L A b c < (> D Di E Fi J DIMENSIONS INCHES MIN. MAX. 0 405 025 0 0,505 0.265 0.423 0.075 060 0 0 163 0 422 0.424 0,438 0.175 0 800 0.189 0.453 0.078 0060 10-32 0 095 UNF-2A 1.53 10-32 6.74 10.75 1.91 15.24 4.15 10.72


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PDF 1N3883/R 1N3883 1N3883R
2007 - Not Available

Abstract:
Text: 1N3882. 1N3883. 1N3889. - 50 - 100 1.0 * 3.0 * 25 * 3.0 * 5.0 * 75 , current IFSM 1N3879. 1N3883. 6FL. 1N3889. 1N3893. 16FL. Units Conditions 12FL. 6* 6 , 1N3879(R), 1N3889(R), 6/ 12/ 16FL(R) Series Recovery Characteristics 1N3879. 1N3889. 1N3883. 1N3893 , Specification 1N3879. 1N3889. 1N3883. 1N3893. 6FL. 12FL. Parameter TJ Tstg Max. junction operating , resistence RthJC when devices operate at different conduction angles than DC) 1N3879. 1N3883. 6FL


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PDF 1N3879 1N3889 1N3879- 1N38891N3883 1N3893 08-Mar-07
1N3879

Abstract:
Text: PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada.CA 90638 Phone: (714) 670-SSDI (7734) - Fax: (714) 522-7424 Designer's Data Sheet 1N3879 thru 1N3883 FEATURES: ■Fast Recovery: 120 nsec maximum ■PIV to 400 Volts ■Higher Voltage devices available ■Low , 1N3883 VRRM Vrwm VR 50 100 200 300 400 Volts Average Rectified Forward Current (Resistive Load, 60Hz , PRELIMINARY thru sfsflsrll 1N3883 SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada.CA 90638


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PDF 670-SSDI 1N3879 1N3883 1N3879 1N3880 1N3881 1N3882 1N3883 Volt300ns 300ns
R0317

Abstract:
Text: SOLID STATE DEVICES INC 12 E D |fl3bbDll DGDlfllS □ | r-03-17 1N3879 THRU 1N3883 6 AMP FAST RECOVERY RECTIFIER 50-400 VOLTS 14830 Valley View Avenue La Mirada. California 90638 (213) 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE DO-4 FEATURES • FAST RECOVERY 100 NSEC MAX. â , 1N3880 VRM (rep) VR 50 100 Volts 1N3881 200 1N3882 300 1N3883 400 RMS Reverse Voltage vr Volts 1N3879 35 1N3880 70 1N3881 140 1N3882 210 1N3883 280 Half Wave Rectified Forward Current


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PDF r-03-17 1N3879 1N3883 1N3880 1N3881 1N3882 1N3883 1N3879 1N3880 R0317 1N3881 1N3882
2009 - 12FL

Abstract:
Text: CHARACTERISTICS 1N3879. TO 1N3883. 6 (1) SYMBOL 145 110 145 180 115 150 190 75 , 350 1N3883. 400 450 1N3889. 50 75 100 150 200 250 1N3892. 300 , (1) 1.5 V t = 8.3 ms I2t 1N3889. 1N3893. 16FL. 12FL. 1N3879. 1N3883. 9.5 , PARAMETER SYMBOL 6FL. 12FL. 16FL. 1N3879. 1N3889. 1N3883. 1N3893. TEST CONDITIONS UNITS , SYMBOL TEST CONDITIONS 1N3879. 1N3883. 6FL. 1N3889. 1N3893. 12FL. TJ TStg - 65 to


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PDF 1N3879 1N3889 6/12/16FL DO-203AA 18-Jul-08 12FL 16FL 1N3880 1N3881 1N3883 1N3893 DO-203AA
in3880

Abstract:
Text: Amps Volts MA 1N3879 IN3880 50 100 6 6 1.4 1.4 15 15 200 (n sec) 200 D04 D04 1N3881 1N3882 1N3883 , 1N3883 6 AMP SILICON FAST RECOVERY RECTIFIER FEATURES . 0.2 ,u.Sec RECOVERY TIME • LOW OVERSHOOT , 3.0 1N3883 400 400 6 1.4 1.5 15 1.0 3.0 'SWITCHING CHARACTERISTICS @ 25°C unless otherwise , , nSec AMPS 1N3879 200 2.0 1N3880 200 2.0 1N3881 200 2.0 1N3882 200 2.0 1N3883 200 2.0 TO WITHSTAND , "" gc 1N3879 thru 1N3883 6 AMP SILICON FAST RECOVERY RECTIFIER zero current rëfër"e~ncë line


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PDF 1N3815 1N3816 1N3817 2EZ120D 2EZ130D 2EZ150D 1N3818 1N3819 1N3820 2EZ160D in3880 Scans-009654 1N3819 equivalent IN3883 s 8050 d 331 do-4 10w ZENER DIODE 1N4016
Not Available

Abstract:
Text: 1N3883 /R asi SILICON POWER RECTIFIER- SWITCHING DESCRIPTION: The 1N3883 /R is Designed for General Purpose Fast Switching Power Supply Applications. • 1N3883 = Cathode to Stud • 1N3883R = Anode to Stud MAXIMUM RATINGS 6.0 A @ T C= 100 °C lo 150 A I fsm (ONE CYCLE) V rw M V r = 400 V Tj -65 °C t o +150 °C T stg -65 °C t o +175 °C 0JC 3.0 °C/W CHARACTERISTICS tj = 25° c SYMBOL UNITS o O o O II lF = 19 A 15 HA 0.5 1.0


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PDF 1N3883/R 1N3883/R 1N3883 1N3883R
2008 - Not Available

Abstract:
Text: Voltage Ratings Type number 1N3879. 1N3880. 1N3881. 1N3882. 1N3883. 1N3889. 1N3890. 1N3891. 1N3892 , . RMS current IFSM Max. peak, one-cycle non-repetitive forward current 1N3879. 1N3883. 6FL , Characteristics Parameter 1N3879. 1N3889. 1N3883. 1N3893. 6FL. 12FL. Units Conditions 16FL. S02 S05 . . , Max. junction operating temperature range Max. storage temperature range 2.5 1N3879. 1N3889. 1N3883. , thermal resistence RthJC when devices operate at different conduction angles than DC) 1N3879. 1N3883.


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PDF 1N3879 1N3889 1N3879- 1N38891N3883 1N3893 12-Mar-07
2012 - diode 40 S02

Abstract:
Text: IFSM 60 Hz 50 Hz 60 Hz I2 t VRRM trr TJ Range Range CHARACTERISTICS TC = 100 °C 1N3879. TO 1N3883. 6 , 1N3879. 1N3880. 1N3881. 1N3882. 1N3883. 1N3889. 1N3890. 1N3891. 1N3892. 1N3893. FORWARD CONDUCTION , ° conduction, half sine wave DC 1N3879. 1N3883. 6 (1) 100 9.5 t = 10 ms Maximum peak, one-cycle non-repetitive , PARAMETER SYMBOL TEST CONDITIONS 1N3879. 1N3889. 1N3883. 1N3893. 6FL. 12FL. 16FL. S02 Maximum reverse , , case to heatsink SYMBOL TEST CONDITIONS 1N3879. 1N3883. 6FL. 1N3889. 1N3893. 12FL. - 65 to 150 °C -


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PDF 1N3879 1N3889 6/12/16FL DO-203AA 1N3879. 1N3883. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. diode 40 S02
IN3881

Abstract:
Text: 15 1.0 3.0 1N3882 300 300 6 1.4 1.5 15 LO 3.0 1N3883 400 400 6 1.4 1.5 15 1.0 3.0 Switching , 200 2.0 1N3883 200 2.0 DERATING CURVE TYPICAL OSCILLOSCOPE PATTERNS OF RECOVERY EXTRAPOLATED TO


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PDF IN3879-I -r-03-n 7/16th S010AXTRAPOLATED 14nSec, IN3881 1N3880 IN3879-I 1N3879 1N3881 1N3882 1N3883
2012 - 70HFL

Abstract:
Text: IFSM 60 Hz 50 Hz 60 Hz I2 t VRRM trr TJ Range Range CHARACTERISTICS TC = 100 °C 1N3879. TO 1N3883. 6 , 1N3879. 1N3880. 1N3881. 1N3882. 1N3883. 1N3889. 1N3890. 1N3891. 1N3892. 1N3893. FORWARD CONDUCTION , ° conduction, half sine wave DC 1N3879. 1N3883. 6 (1) 100 9.5 t = 10 ms Maximum peak, one-cycle non-repetitive , PARAMETER SYMBOL TEST CONDITIONS 1N3879. 1N3889. 1N3883. 1N3893. 6FL. 12FL. 16FL. S02 Maximum reverse , , case to heatsink SYMBOL TEST CONDITIONS 1N3879. 1N3883. 6FL. 1N3889. 1N3893. 12FL. - 65 to 150 °C -


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PDF 1N3879 1N3889 6/12/16FL DO-203AA 1N3879. 1N3883. 11-Mar-11 70HFL
2011 - 12FL

Abstract:
Text: CHARACTERISTICS 1N3879. TO 1N3883. 6 (1) SYMBOL 145 110 145 180 115 150 190 75 , 350 1N3883. 400 450 1N3889. 50 75 100 150 200 250 1N3892. 300 , (1) 1.5 V t = 8.3 ms I2t 1N3889. 1N3893. 16FL. 12FL. 1N3879. 1N3883. 9.5 , PARAMETER SYMBOL 6FL. 12FL. 16FL. 1N3879. 1N3889. 1N3883. 1N3893. TEST CONDITIONS UNITS , SYMBOL TEST CONDITIONS 1N3879. 1N3883. 6FL. 1N3889. 1N3893. 12FL. TJ TStg - 65 to


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PDF 1N3879 1N3889 6/12/16FL DO-203AA 11-Mar-11 12FL 1N3893 1N3889 Series 1N3883 1N3881 1N3880 16FL Series 16FL
in3880

Abstract:
Text: . 1N3879R P/N 1N3879 1N3880 1N3881 PIV (volts) 50 100 200 P/N 1N3882 1N3883 3 0 (1U - 411> J *EY. O , ± DWO. NO. 1N3879 - 1N3883 19276182


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PDF 30SS71b QQ003Ã 1N3879R 1N3879 1N3880 1N3881 1N3882 1N3883 1N3883NDUSTRIES in3880 1N3879R 1N3881 1N3883
1N3880

Abstract:
Text: 1N3879 thru 1N3883R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 6 A Features · High Surge Capability · Types up to 400 V VRRM DO-4 Package Maximum ratings, at Tj = 25 °C , (R) 1N3882 (R) 1N3883 (R) Unit VRRM 50 VRMS 35 70 VDC 50 100 100 300 , ) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit Symbol Conditions VF IF = 6 A, Tj = 25 °C , 1 1N3879 thru 1N3883R www.genesicsemi.com 2 GeneSiC Semiconductor


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PDF 1N3879 1N3883R 1N3879 1N3880 1N3881 1N3882 1N3883 1N3880 ir10 diode 1N3881 1N3882 1N3883 1N3883R
Not Available

Abstract:
Text: 1N3879 thru 1N3883R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 6 A Features • High Surge Capability • Types up to 400 V VRRM DO-4 Package Note: 1. Standard polarity: Stud , (R) 1N3882 (R) 1N3883 (R) Unit VRRM 50 VRMS 35 70 140 210 280 V VDC , 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit Symbol Conditions VF IF = 6 A, Tj , 1 1N3879 thru 1N3883R www.genesicsemi.com/index.php


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PDF 1N3879 1N3883R 1N3879 1N3880 1N3881 1N3882 1N3883
1N3879

Abstract:
Text: . 1N3879R P/N 1N3879 1N3880 1N3881 PIV (volts) 50 100 200 P/N 1N3882 1N3883 PlV(volts) 300 400 3 0 (1 , ± 0WO. NO. 1N3879 - 1N3883 This Material Copyrighted By Its Respective Manufacturer


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PDF 3DcIS71b 1N3879R 1N3879 1N3880 1N3881 1N3882 1N3883 1N3879R 1N3881 1N3883 IN3880
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