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1N251A Microchip Technology Inc Rectifier Diode, 1 Element, 0.005A, Silicon, DO-7
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1N251 datasheet (78)

Part Manufacturer Description Type PDF
1N251 BKC International General Purpose Silicon Diodes, DO-35 Scan PDF
1N251 General Diode Germanium Diodes, DO-7 Case Scan PDF
1N251 General Electric Semiconductor Data Book 1971 Scan PDF
1N251 Microsemi General Purpose Computer Diode Scan PDF
1N251 Motorola Motorola Semiconductor Datasheet Library Scan PDF
1N251 Others GE Transistor Specifications Scan PDF
1N251 Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
1N251 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1N251 Others Shortform Electronic Component Datasheets Scan PDF
1N251 Others Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
1N251 Others Silicon Diode Scan PDF
1N251 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N251 ZaeriX Short Form Data Catalogue 1972-73 Scan PDF
1N2510 Motorola Motorola Semiconductor Datasheet Library Scan PDF
1N2510 Others Shortform Semicon, Diode, and SCR Datasheets Scan PDF
1N2510 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
1N2510 Others Silicon Point Contact Mixer Diodes Scan PDF
1N2510 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
1N2510M Others Silicon Point Contact Mixer Diodes Scan PDF
1N2510M Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

1N251 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N251

Abstract: No abstract text available
Text: mCROSEMI CORP/ ÙIATERTOUN COMPUTER DIODE General Purpose SDE D ■T347clii3 GGlSaMT bfc.T ■UNIT 1N251 JAN 1N251 ABSOLUTE MAXIMUM RATINGS, AT 25°C Peak Reverse Voltage , Reverse Current Reverse Current @ 125°C Forward Voltage Reverse Recovery Time 1N251 20/iA @ Vr = 20V 0.1 , , Irec = 0.5mA JAN 1N251 100//A @ Vr = 30Vdc .1 /iA @ V„ = 10V 10/iA @ 10V T»= 100°C IV @ If = 10mA 30ris If =10mA, In =10mA Rl = 1000, C = 4pf MECHANICAL SPECIFICATIONS JAN 1N251 00-7 1N251 II Â


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PDF T347clii3 1N251 1N251 75mAdc 125mA 200mA 150mW 20/iA 10//A
1N251

Abstract: No abstract text available
Text: COMPUTER DIODE General Purpose A B SO LU T E M AXIMUM RATINGS, A T 25°C FEATU RES 1N251 JAN 1N251 Peak Reverse Voltage . .40V Reverse W orking Voltage .30V Average R ectified Current . Surge , O fi, C = 4pf 1N251 If < " JA N 1N251 100//A @ V B = 30Vdc If IV @ = 10m A


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PDF 1N251 1N251 10/jA 150ns 100//A 30Vdc
1n914 equivalent

Abstract: 1N3067 1N5318 1N4009 equivalent 1N814 1N5319 1n904 1n903 FD6666 1N4950
Text: 1N3603 1N 4148 JAN 1N 4148 J A N T X 1N659 1N814 1N251 JA N 1N251 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0


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PDF 1N4150 1N4305 1N4322 1N907 1N908A 1N905 1N906 1N4009 1N4154 1N906A 1n914 equivalent 1N3067 1N5318 1N4009 equivalent 1N814 1N5319 1n904 1n903 FD6666 1N4950
FD6666

Abstract: FD6666 equivalent jantx2n2920 1N5319 JANTX2N2222A 1N4148 JANTX JANTX2N918 1N5318 355ML 1N4148 JAN
Text: 1N3602 1N3603 1N4148 JAN 1N659 1N814 1N251 JAN 1N251 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0


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PDF JAN1N251 JAN1N457 JAN1N458 JAN1N459 JAN1N483B JAN-TX1N483B JAN1N485B JAN-TX1N485B JAN1N486B JAN-TX1N486B FD6666 FD6666 equivalent jantx2n2920 1N5319 JANTX2N2222A 1N4148 JANTX JANTX2N918 1N5318 355ML 1N4148 JAN
mc 4011

Abstract: working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic
Text: MIL SPECS 0000155 0002504 T | MIL-S-19500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE JAN- 1N251 This amendment forms a part of Military Specification MIL-S-19500/188A, dated 9 October 1963, and is approved for use by all Departments , SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPE JAN- 1N251 This specification has been approved by the , diameter shall be 0.130. Figure 1. Semiconductor device, diode, type JAN- 1N251 . 5


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PDF MIL-S-19500/188A JAN-1N251 MIL-S-19500/188A, 000250e! MIL-S-19500/188A JAN-1N251. mc 4011 working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic
1N34A reverse recovery

Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S ) r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage (volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge Ge Ge Si 75 40 40 80 30 1.0 1.0 1.0 1.0 1.0 5.0 5.0 3.0 4.0 5.0 30 60 10 50 .10 1N270 1N277 1N695A 1N772A 1N933 Ge Ge Ge Ge * Ge 100 125 25 80 100


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PDF 1N34A 1N60A 1N128A 1N198A 1N251 1N270 1N277 1N695A 1N772A 1N933 1N34A reverse recovery
MC 4066

Abstract: No abstract text available
Text: MIL-S-l9500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE. SILICON. SWITCHING TYPE JAN- 1N251 This amendment forms a part of Military Specification MIL-S-19500/188A, dated 9 October 1963, and is approved for use by all Departments and Agencies of the Department of Defense. PAGE 1 1.2 Ratings, TQp and Tst , maximum: Delete "+100" and substitute "+175". PAGE 2 4.4.2: Delete in its entirety. PAbt t TABLE 11, group B inspection , subgroup 4: Delete Surge current


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PDF MIL-S-l9500/188A JAN-1N251 MIL-S-19500/188A, MC 4066
1N626

Abstract: 1N658 DSAIH000251 1N661
Text: 0 K C IN T E R N A T IO N A L 30E D 1171163 0000302 1 " p 0 3 "O°j BKC 2000 Series P eak Inverse VoHage (PIV) * General Purpose Silicon Diodes in DO-35 Package Max Power Disslpation-(PQ) Forward Voltage Drop (VF) R everse Current O r) Max avg Rectified Current (l0 ) (l0 ) Reverse Recovery at Ip '^fne Crr) Type BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 1N661 Volts 20 25 60 40 30 70 50 100 120 60 120 240 mA


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PDF DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 DSAIH000251 1N661
1N458

Abstract: 1N626 BA170 1N459a BAV18 BAV17 1N627 1N462A 1N251 hep silicon diode
Text: B K C INTERNATIONAL 3QE , „ U711M D0B0302 t ■■H BKC 2000 Series ♦ General Purpose Silicon Diodes in DO-35 Package ■■■Peak Maxavg Forward Reverse Invars« Rectified Max Power VoHage Reverse Recovery VoHage Current (l0) Dissipation (Pq) Drop at lp Current atVR Time (PIV) do) 1N251 40 125 150 1.0 5 20 20 150


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PDF U711M D0B0302 DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N458 1N459a 1N627 hep silicon diode
IN5551

Abstract: 1N4148 75v 150mA diode in483a zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode zener diode 50w zener in4148 zener 600v
Text: MICROSEMI CORP/ lilATERTOülN SDE T> PART NUMBER INDEX 13M7^b3 ÜDima 275 «UNIT7^/-*? PART NUMBER DESCRIPTION PART NUMBER DESCRIPTION 1N251 , J 1N456 1N456A 1N457, J 1N457A 1N458, J 1N458A 1N459, J 1N459A IN 483 IN483A 1N483B, J, JTX 1N483C 1N485 1N485B, J, JTX 1N643, J 1N645J, JTX 1N645-1J, JTX, JTXV 1N647, J, JTX 1N647-1, J, JTX, JTXV 1N662, J 1N663, J 1N914, J, JTX 1N914-1, A, B 1N916, B IN3064J, JTX 1N3070, J, JTX 1N3595, J, JTX, JTXV 1N3600, J, JTX, JTXV 1N3611, J, JTX 1N3612


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PDF 1N251, 1N456 1N456A 1N457, 1N457A 1N458, 1N458A 1N459, 1N459A IN483A IN5551 1N4148 75v 150mA diode zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode zener diode 50w zener in4148 zener 600v
GEX66

Abstract: OA71 OA81 D223A d223b OA73 OA79 OA85 OA70 ba153
Text: 0.20 HD5000 10 12 S (Switching) 0.10 1N198 _ 80 30 G 0.15 HG5093 40 100 G/GB 0.10 1N251 _ 40 120 S


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PDF 1N34A GEX66 GEX941 GEX951 HD5000 1N198 HG5093 1N251 HS1012 BA153 OA71 OA81 D223A d223b OA73 OA79 OA85 OA70
D07 15

Abstract: 1N814 1N3067 1N4532 1N3068 1N461 1N4454A 1N904 IPF 830 1N3069
Text: SILICON SIGNAL DIODES BV (S> 1 00;/A Ir <® 25"C Max. Vf Max. Co t., (nsec) Package Type Package Outline No. Specification Sheet Mo. Part Number (V) (ni) @ Vr(V) (V) @ If(mA) ïpf) 1N251 35 100 10 1.00 5 — — D07 37 — 1N252 25 100 c 1.00 10 — — D07 37 — 1N461 30 500 30 1.00 15 6.0 _ D07 37 — 1N625 m 1000 20 1.E.0 4 — — D07 37 — 1N62G 50 1000 35 1.50 4 — — D07 37 — 1N814 40 100 2CI l.C'O 2 1 10 D07 37 — 1N903 40 100 40 l.CO 10 — — D07 37 â


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PDF 1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 D07 15 1N3067 1N4532 1N3068 1N4454A IPF 830 1N3069
Not Available

Abstract: No abstract text available
Text: I I ' m ech an ical d a ta TYPE 1N251 SILICON SWITCHING DIODE M EDIUM-SPEED SWITCHING DIODE · Rugged Double-Plug Construction [_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ BU LLETIN NO. DL-S 739094, S EP TEM BE R 1 9 6 6 - RE V ISED M A R C H 1973 Double-plug construction affords integral positive contact by means of a thermal compression bond. Moisture-free stability is ensured through


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PDF 1N251
1N813

Abstract: No abstract text available
Text: ) @25°C @125°C 1N251 (617) 872-7520 F orw ard P eak C o n tin u o u s A v erag e F o rw a rd


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PDF
diode D07-15

Abstract: diode d07 DIODE 1N4087 1N3605 1N9148 2N2222 chip 1N814 DIODE 1N3605 1N4532 DIODE 1N9148
Text: SILICON SIGNAL DIODES BV (S> 1 00;/A Ir <® 25"C Max. Vf Max. Co t., (nsec) Package Type Package Outline No. Specification Sheet Mo. Part Number (V) (ni) @ Vr(V) (V) @ If(mA) ïpf) 1N251 35 100 10 1.00 5 — — D07 37 — 1N252 25 100 c 1.00 10 — — D07 37 — 1N461 30 500 30 1.00 15 6.0 _ D07 37 — 1N625 m 1000 20 1.E.0 4 — — D07 37 — 1N62G 50 1000 35 1.50 4 — — D07 37 — 1N814 40 100 2CI l.C'O 2 1 10 D07 37 — 1N903 40 100 40 l.CO 10 — — D07 37 â


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PDF 1N251 1N252 1N461 1N625 1N62G 1N814 1N903 1N903A 1N904 1N914 diode D07-15 diode d07 DIODE 1N4087 1N3605 1N9148 2N2222 chip DIODE 1N3605 1N4532 DIODE 1N9148
1n45b

Abstract: 1N48 diode T11G T26G T13G IN283 1N849 DIODE 1N418 t20g IN457A
Text: —DO-7 TYPE 1N251 * 1N252. IN 432' 1N434 1N458 1N456A 1N457* IN457A 1N45B* 1N458A 1N459* 1N459Ã


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PDF 3flL1750 1N34A 1N38B 1N52A 1N54A 1N251* 1N252. 1N434 1N458 1N456A 1n45b 1N48 diode T11G T26G T13G IN283 1N849 DIODE 1N418 t20g IN457A
IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N4389 1N20S in648 1N4243 1N207
Text: 1H221 390 4.0 2.0 5 100(2) 390 2.6* _ 150 C-l 1N222 470 4.0 1.5 5 100 (2) 470 2.4* 150 C-l 1N251 30


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PDF 1N194A 1N195 1K200 1N201 JN202 IN4829 1N4J30 MP035Ã MPD302 MPB401 IN3599 1N9168 1N4242 IN485 IN625 1N4389 1N20S in648 1N4243 1N207
2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1n4007 - 2n4001 2N698 SCR 1N589 1N233A 2N3304 1N20461
Text: .A.B 1N251.A 1N252.A 1N253/ 1N256 1N265/ 1N268 1N270 1N273 1N276 1N277.M 1N278 1N279 1N281 1N282 1N283 1N287 , / 1N2490 1N2491/ 1N2494 1N2495 1N2496 1N2497 1N2498 1N2499 1N2500 1N2501/ 1N2508 1N3512/ 1N2517 1N2524


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PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1n4007 - 2n4001 2N698 SCR 1N589 1N233A 2N3304 1N20461
1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: 1N198B 1N198M 1N251 1N251A 1N252 1N252A 1N265 1N266 1N267 1N268 1N270 1N273 1N276 1N277


Original
PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
BA100 diode

Abstract: BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
Text: -127-147/50-167-170-187, BAW75, BAX 13, BAY 18-60-61-86, 1N251-914-4446 /7/8/9, 1S180. BAY89, BYX10, 1N4005. BAY90, BYX10 , -117-127-147-170-180, BAX13, BAY61, FDH999, 1N914-4446/7/8/9, 1S184. BA143-152-177-182. BA 100-127-147-170, 1N251-914 , 1S180, BAY61. BA100-127-147-170, 1N251-914 , 1S180, BAY61. 1N4148, BA127, BAY61. BA100-1 27-147-181, BAX16, BAY , , BB103, 1M5472. BA102-111-119-124-216, TN5475. BA100-117-12'7-147-17CM80-181-216, FDH099, 1N251 , 1S184. I , , BAY61. BA209, BAX13, 1N914, BAY61. BA100-181A. FDH999, SAY32, 1N251 , BAW75, '■BAY61. ' BAX89A BA209


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PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
Text: , BAX13, BAY18-60-61-86, 1N251-914-4446 /7/8/9, 1S180. BAY89, BYX10, 1N4005. BAY90, BYX10, 1N4006. BAY91 , 143-152-177-182. BA 100-127-147-170, 1N251-914 , 1S180, BAY61. BA100-127-147-170, 1N251-914 , 1S180.BAY61. 1N4148 , -117-127-147-170-180-181-216, FDH999, 1N251 , 1S184. BA117-148, BAY 19-21-45-88, FDH400, 1S183. 2xBA 100-127-147-181, 2xBAY18, 2xFDH900 , -181 A, FDH999, SAY32, 1N251 , BAW75, BAY61. BA209, FDH999, 1N914-4148, BAW75, BAY61. BA209, 1N914-41 51 , 1N458 1M3 58 1N547 CG50H 1N1130 1N55B 1N58A 1N263 1N660 1N204 1N39B 1N67 1N78A 1IM126A 1N251 1N252


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PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: 1N191 1N192 1N194 1N194A 1N195 1N196 1N198 1N198A 1N198B 1N198M 1N2069 1N2070 1N2071 1N251 1N251A 1N252 1N252A 1N265 1N266 1N267 1N268 1N270 1N273 1N276 1N277 1N277M 1N278 1N279


Original
PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
IN3492

Abstract: 1NA4 sg 4001 diode diode 1n6 1469r iN3495 0a202 diode 1n67a 1N20b 35C10
Text: 220 20 1N 250R 200 10 IN 2 5 0 B R 1N 250C 159 1N251 30 90 • 09 1N251 JAN 30 40 .0 9 20 2 .5 20 IN 2 5 0 A R ,1 N 2 5 0 B R ,IN 2 5 0 C R ,1 N 1 9 1


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PDF 3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 1NA4 sg 4001 diode diode 1n6 1469r iN3495 0a202 diode 1n67a 1N20b 35C10
20680 JRC

Abstract: Germanium Diode aa116 110B6 Germanium itt Elmwood Sensors 2450 Thermal Switch 189-17-F170 1N4465 BA100 diode 1N21 MD1010 Marconi 2026 service manual
Text: No file text available


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PDF
Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 ES5449 2N241 epitaxial mesa germanium transistor transistor bf 175 2N3201 2N2197 GENERAL ELECTRIC
Text: No file text available


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PDF
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