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Part Manufacturer Description Datasheet Download Buy Part
1655A B&K Precision Corporation Bench Power Supply; Output Current:4A; Calibrated:No; Features:Leakage test, soldering iron temperature control, displays voltage, current, VA & leakage readings, input voltage of 120 VAC 10%, 60 Hz; Mounting Type:Benchtop
1710A B&K Precision Corporation Bench Power Supply; Output Voltage:30V; Output Current:1A; Output Power Max:70W; Number of Outputs:1; Calibrated:No; Display Technology:LED
1745A B&K Precision Corporation Bench Power Supply; Output Voltage:35V; Output Current:10A; Number of Outputs:1; Calibrated:No; Display Technology:Digital; Output Current Max:10A; Output Current Min:0A; Output Voltage Max:35V; Output Voltage Min:0V
1856D B&K Precision Corporation COUNTER MULTIFUNCTN BENCH 3.5GHZ
302 B&K Precision Corporation Phase & Motor Rotation Meter; Phase/Rotation Functions:Phase Sequence Identification, Open Phase Test, Motor Rotation Direction Identification; Voltage Measuring Range AC:; Frequency Measuring Range: RoHS Compliant: NA
367A B&K Precision Corporation BK Precision Clamp-On Multimeters, AC Current: 2000 A, DC Current: 2000 A, AC Voltage: 750 V, DC Voltage: 1000 V, Resistance: 40 MegOhm, Count Resolution: 4000, Auto Off: 30 min

1N249A-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
IN248B

Abstract: IN250B 1N249B insulated stud rectifier IN249 1N250A in249B 1N248A 1N249 1N250B
Text: 74010001500 AVERAGE CURRENT-AMPERES 130 Silicon Rectifier I 1N248-50.fl, B ~l 10A & 20A Types These stud , 1N248-50, A, B OUTLINE DRAWING INSULATING HARDWARE KIT* DIRECTION OF EASY CONVENTIONAL CURRENT FLOW


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PDF 1N248-50 IN24BA. 1N249A, IN250A, IN248B, IN249B, IN250B 1N248A, 1N250A IN248B IN250B 1N249B insulated stud rectifier IN249 in249B 1N248A 1N249 1N250B
IN250B

Abstract: IN249B IN249 1N24*b 1N249B IN248B 1N249 insulated stud rectifier 1N248 1N248A
Text: Silicon Rectifier I 1N248-50.fl, B ~l 10A & 20A Types These stud mounted diffused junction silicon rectifiers are designed for all rectifier applications in the 10 to 20 ampere range. A high junction temperature rating and an extremely low forward voltage drop and thermal impedance permit high current operation with minimum space requirements. These rectifiers may be mounted directly to a chassis , , B OUTLINE DRAWING INSULATING HARDWARE KIT* DIRECTION OF EASY CONVENTIONAL CURRENT FLOW .420


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PDF 1N248-50 IN24BA. 1N249A, IN250A, IN248B, IN249B, IN250B 1N248A, 1N250A IN250B IN249B IN249 1N24*b 1N249B IN248B 1N249 insulated stud rectifier 1N248 1N248A
A139

Abstract: A44E 1N249B 1N3909-13 1N5332 A40F IN1188
Text: . 133 Silicon Rectifier I 1N248-50.fl, B ~l 10A & 20A Types These stud mounted diffused junction , , B OUTLINE DRAWING INSULATING HARDWARE KIT* DIRECTION OF EASY CONVENTIONAL CURRENT FLOW .420


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PDF 1N248B-50B 1N1195A-98 1N2154-60 1N3765-68 1N5332 1N4529-30 1N1183A-90A 1N3899-3903 1N3909-13 1N3208-14 A139 A44E 1N249B A40F IN1188
1N1191A

Abstract: No abstract text available
Text: . 1N3212 1N2159 1N1438. 1N2160 300 350 400 450 500 600 Dim A B C D E F Inches Minimum


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PDF 1N248. 1N1191, 1N1191A, 1N2793 1N249, 1N1192. 1N1192A, 1N2794 1N1193. 1N1193A, 1N1191A
JANTX1N1184

Abstract: JAN1N1 1N3768
Text: tric S e c tio n is o r g a n iz e d b y a s c e n d in g 10 (am ps), fo llo w e d b y a s c e n d in g V R (vo lts ), a n d th e n b y P a rt N u m b e r G e n e ra l N o tes: 1 In fo rm a tio n o n c o n ta c tin g M ic r o s e m i D iv is io n s c a n b e o b ta in e d on the b a c k c o v e r o f th , o th e p r o d u c t d a ta s h e e ts b y u s in g the fa x o n d e m a n d s y s t e m o r c o n ta c tin g th e M ic r o s e m i m a n u fa c tu rin g d iv is io n . 4 D a ta s h e e ts c a n b e o


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PDF REC-19 JANTX1N1184 JAN1N1 1N3768
R3225

Abstract: S3225 1N249B s3260 S3215 r3235 R3205 1N2154 S32100 1N248C
Text: No file text available


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1N33A

Abstract: 1n250 diode 1N34* diode diode 1n34 1N254 "general diode corporation" 1N255 1n607a 1N348 1N248
Text: 3869720 GENERAL DIODE CORP GENERAL DIODE CORP STUD MOUNTED SILICON POWER RECTIFIERS 86D 00322 D T'OI"/f at dF| 301^750 0000325 0 j" I I" ö o 1 O- 1N248 DO-5 50 10 @ 150 1.5 @ 25 1N248A, B DO-5 50 20 @ 150 1.5 @ 50 1N249 Do-5 100 10 @ 150 1.5 @ 25 1N249A, B Do-5 100 20 @ 150 1.5 @ 50 1N250 DO-5 200 10 @ 150 1.S @ -25 1N250A, B Do-5 200 20 @ 150 1.5 @ 50 1N253 Do-4 95 1@150 2@2 1N254 DQ-4 190 0.4 @ 150 2@0.8 1N255 Do-4 360 0.4 @ 150 2@0.8 1N25S Do-4 570 02 @ 150 2 @ 0.4 1N332 Do


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PDF 1N248 1N248A, 1N249 1N249A, 1N250 1N250A, 1N253 1N254 1N255 1N25S 1N33A 1n250 diode 1N34* diode diode 1n34 "general diode corporation" 1n607a 1N348
IN4054R

Abstract: IN4048R IN4045 B 1186a 1N2131 IN3294 1N1202 1N1201 IN4056R IN4048
Text: A 1 B 44 .47 11.11 11.89 C 42 .44 10.77 11.10 2 D _ .72 _ 18.26 E 09 — 1.52 — F â , 1N1438, 1N2160 600 Dim Inches Millimeters Notes Minimum Maximum Minimum Maximum A 1 B 44 .468 , A 1 B 44 47 11 11 11 89 C 67 69 16 94 17 46 2 D _ 1 00 — 25 40 E 15 18 381 4 69 F - 28 â , GDCmabfc. b I T- ÔÎ-/V Silicon Power Rectifiers 100 AMP -DO 8 JEDEC Peak Numbers Reverse , Inches Millimeters Notes Numbers Reverse Minimum Maximum Minimum Maximum Voltage A 1 B


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PDF fil3bb50 1N1341, 1N1341A, 1N1341B, 1N1581, 1N1612, 1N2228, 1N2491 1N1342, 1N1342A, IN4054R IN4048R IN4045 B 1186a 1N2131 IN3294 1N1202 1N1201 IN4056R IN4048
LT3973-3.3

Abstract: L1117T-3.3 LT3971-3.3
Text: 1N2517 1N2784 1N248 1N248A. B 11*249 1N249A, B 1ICS0 1N250A, 8 IN1183 1N1184 1N1184A IN IIB S , (24) At 150°C Ambient «(25) At 150°C Base ■I M flb^M b 000041Ô 33b ■140 150


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PDF 1NU88A 1N1189 1N1189A 1N1190 I190A LT3973-3.3 L1117T-3.3 LT3971-3.3
2010 - varo r634

Abstract: SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 aeg diode
Text: No file text available


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PDF FB3504 RA354 35SP04 DD716 ST4-40 NCR35-400 1N4526 1N1188 D4055W TRA1130 varo r634 SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 aeg diode
1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5053 IN5054 1N3549
Text: í s 150 1.1 © 1 0.3 @ 150 3 1N1124A 200 1 C »150 1.1 @ 1 0.3 @ 150 _ INI125 300 1 « B 150 1.1 , 150 3 1N1126A 400 1<¡ B 150 1.1 © 1 0.3 @ 150 _ 1N1127 500 1 0 § 150 1.1 @ 1 0.3 @ 150 3 1N1127A , ) 0.5 © 150(8) 0.5 @ 150(10) 0.5 @ 150(10) 2.5 @ 135 Notes 1N248 1N248A. B 1N249 1N249A, B 1N250 50 50 , 25 5® 150 5 @ 150 5 © 150 5 @ 150 5 @ 150 3 3 3 3 3 1N250A, B INI183 1N1184 1N1184A INI 185 200 50 , 1N2054 1N205S 1N2056 50 100 150 250 S 250 a 250 € B 100 b 100 S 100 1.3 @ 250(20) 1.3 @ 250(20) 1.3 @


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PDF oQoos11! DO-41case 1N3549 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N2222A 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5053 IN5054
BA100 diode

Abstract: BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
Text: . 1N248A- B BYX52/600, B \(Z14. v 1N249 BYX42/300, BYZ14. 1N249A-B BYX52/600, BYZ14. 1N250 BYX52/300, BYZ14 , -149-162, B8100-102-10SG, 1N5467/8." BA141-149-161, BB105A/ B /G. BA138-142-149-162, BB100-102-105G. BA139-161, BB105A/ B , BA138-139-149-152-162, BB100-102-105G. BA152-165-177-182, BAX13, FDH900. ' BA 182. : BA182. . , , BYX10, 1N4007. BA139-141, BB105A/ B . BA138-142-149-161, BB100-102-105G. BB107-113. BA114 , , 1N916-4449, BAW76. 20 BA21S BA216 BA217 BA218 BA2t9 BA220 BA221 BA222 BA243 8A244 BA316 BA317 BA318 BAV10 B


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PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 PH1021 1N2528 GAZ17 BB105 DIODE AA116 OA210 diode
FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
Text: 1N209 1N210/1 1N212 1N215 1N216 1N217 1N220 1N248A- B 1N249 1N249A-B 1N250 1N251 1N252 1N253/4/5 1N254R , AM410 AM415 AM420 AM425 AM430 AM435 AM440 AM450 AM460 AY 102 AY103K AYY10/120 B1A1-5-9 B IB 1-5-9 B1C1 , -102-105G, 1N5467/8" BA141-149-161, BB105A/ B /G. BA 138-142-149-162, B B100-102-105G. BA139-161, BB105A/ B . BA138 , -145-185, BAY89, 1N4004. BA132, BAY90, BYX10, 1N4005. BA 133, BAY91, BYX10, 1N4007. BA139-141, BB105A/ B . BA138 , . BA185. BAV20, FDH400. 1N3595, 1S923. 1N485/ B , 1S923. BAX16. BAV10-13, FDH999. BAV10-13, FDH900. BAV10


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PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 AA119 BB139 1S184 diode BY126 BAY38
1n9788

Abstract: 1N1164A 1N1623 1M1581 1n12G 1N2455 1346b hl 1616 1N1411 1N1115
Text: 140 150 140 @ 150 @ < B @ @ @ <® (® <© @ 140 140 150 140 150 140 150 140 140 150 Maximum Forward , 150 O 150 (2) 150 (3) 150 (3) 150 1N248 1N248A, B 1N249 1N249A. B 1N2S0 1N250A. B IN 1183 1M 184 , _ - - - 3 3 3 3 3 3 3 3 3 3 @> 50 ( B 100 (3 100 <á 100 @> 100 <3> 100 (5) 100 <© 100 (3 , ( B 15 - (a> 150 (3) 150 O 150 @ 150 (a> 15 15 Í® 40 (5) 40 N otes; (3) Reverse , a v a ila b le as JE D E C " A " v e rs io n s . 4 ñb T24 b 00003L.0 7=11


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PDF 1S3054 1N3Q51 00003L 1n9788 1N1164A 1N1623 1M1581 1n12G 1N2455 1346b hl 1616 1N1411 1N1115
1N1120

Abstract: 1N2484 1N342 1N2226
Text: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb ■M äb T EM b IN T E X / S E M IT R O N IC S silicon axial lead siliconcont’d , 50 50 50 100 100 6@ 6® 6@ 6@ 6@ 150 150 150 150 150 in i3 « b . 1N1343 , 0.3 a0 150 0.3 »0 150 0.3 6ù ‘.50 0.3 C■150 > 1 Í b 150 0 .3 ® 0.3 @ 0.3 @ 6@ 6 , ) Notes 1200 700 800 900 1000 1N248 1N248A, B 1N249 1N249A, B 1N250 1N250A, B 1NU83


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PDF 1N3241 1N3242 1N3243 1N3244 1N3245 1H253 1N254 1N255 150J7 1N1120 1N2484 1N342 1N2226
10191RA

Abstract: 1N1373R 1N1059 1N1052 1N600 ZENER 18-2 5t 1n1042 1N1065 1n1146 1N1695
Text: r load. ! D erate c u rre n t 2 0 % fo r sing le phase o p e ra tio n on b a tte ry m o to r o r , D erate c u rre n t 2 0 % fo r single phase o pe ra tio n on b a tte ry m o to r o r capacitive load , sing le phase o pe ra tio n on b a tte ry m o to r 4 44 Add s u ffix " N ” fo r anode connected to , . Ai A 8 o C n o L1 J; V -A - H P ; b m «N - b— c - o Ul in O -I h o T 1 o O B . -~TTT lL o h c— H — h O


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PDF 1N248 1N248A 1N248B 1N248C 1N249 1N249A 1N249B 1N249C 1N250 1N250A 10191RA 1N1373R 1N1059 1N1052 1N600 ZENER 18-2 5t 1n1042 1N1065 1n1146 1N1695
SN72710L

Abstract: MC1013P MC680P 796HC MC838P MC814G mc1235l CD4016AE 741PC CD4082
Text: 1-25 VOLTAGE COMPARATOR 587-28(5 V I <+) OUTPUT B 14 41-18 NE529 A NE 529 K AMPEX O PERATIONAL A , 3.34V TRIGGER V = 1/3VCC = 1.67V OUTPUT | [_ J |_J [ _ |*-T1->| t 2 [«— T1 = 0.685 (R a + R B ) C. T2 = 0.685 R b C. 5-9 AMPEX 589-254 NE 556 A DUAL TIMER (DUAL NE 555) VCC: GND: DISCHARGE , OFFSET N U LL B OFFSET N U LL B OFFSET N U LL A NO CONNECTION Mr El A M P E X ret UA 748 5 89-104 , 14 12 f Vcc y-av 4 30 11 CND INPUT GATE 796HC REV 7-8 DOUBLE B A L MOD/DEMOD 58G-091 MC


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PDF LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034 78M12HC MMH0026CG 79M12AHC 75460BP SN72710L MC1013P MC680P 796HC MC838P MC814G mc1235l CD4016AE 741PC CD4082
rca transistor manual

Abstract: rca case outlines 2n173 2N1637 transistor rca drift-field rca thyristor manual transistor bf 175 2N140 2N301 Germanium diode OA 182
Text: layers F ig ure 9. N-P-N s tru c tu re b ia s e d fo r p o w e r g a in . F ig u re 8. V o lta g e , F ig u re 10. P -T Y P E ^ /M A T E R IA L -O A O E ND S c h e m a tic s y m b o l fo r a s , EMITTER COLLECTOR BASE (a) N - P - N TRANSISTOR EMITTER COLLECTOR BASE ( b ) P - N - P TRANSISTOR F ig u re 13. S c h e m a tic sy m b o ls fo r tra n s is to rs . flow from the collector , positive) with respect to the lower point, as shown at A ' B ' on the out­ put waveform. Conversely, when


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2010 - IN2222A

Abstract: sv4091 IN536 3N68 IN4868 diode IN443 1n9448 transitron catalog TM106 TCR43
Text: No file text available


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hep 154 silicon diode

Abstract: zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
Text: , it is recommended that a 10 watt resistor be placed in series with B + line to limit output voltage , -72 TO-18 TO-5 TO-18 TO-5 TO-92 (A) TO-92 (A) TO-92 ( B ) TO-92 (A) TO-39 TO-39 DO-7 DO-41 DO , 92 310 311 312 320 340 TO-92 (J) TO-92A ( B ) Case 171 TO-92 (G) Case 86 ( B ) 51 52 , -92 (A) TO-92 (A) TO-92 (A) TO-92 (A) TO-92 (A) TO-92 ( B ) TO-92 (A) TO-92 (A) TO-92 (A) TO-92 (A , R0254 R0255 R0256 R0257 R1001 R1002 R1003 R1004 TO-92 (E) TO-92 (F) TO-72 ( B ) TO-72 (A


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PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor hep R1751 motorola HEP 801 hep 154 diode triac zd 607 2sb337 F82Z hep 230 pnp RS5743.3
RCA SK CROSS-REFERENCE

Abstract: CD4003 pa189 250PA120 pt 3570 trw rf 2N3017 TF408 2N2505 1N4465 FAIRCHILD TTL DATA BOOK 1969
Text: 1.0 Carry Decoder SM40 Series 2 25 1.0 1.0 4- B it Storage Register SM60 Series 20 3 0 / b it 1.0 1.0 Bus Transfer Output 4- B it Storage Register SM70 Series 20 3 0 / b it 1.0 1.0 Cascade Pullup Output 16-Bit Scratch Pad Memory SM80 Series 25 , 30MHz 125 85 1.0 1.0 4- B it Shift Register S M I 10 Series 25MHz 120 1.0 1.0 , ila b le in fa n o u ts up to 1 5 and a r e c o m p le te ly c o m p a tib le w it h S U H L 1 a


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IN3492

Abstract: 1NA4 sg 4001 diode diode 1n6 1469r iN3495 0a202 diode 1n67a 1N20b 35C10
Text: N 8 7 5 ,1 N 8 7 6 ,1 N 8 7 7 , 1 N 8 7 8 ,M 0 4 5 6 S B A 5 L ,S B A 8 L ,S B A 1 0 L ,S B A 1 2 L ,S B A 1 6 L , S B A 2 0L , 0A5 1 N 6 4 5 B . I N I 1 3 0 , I N I 1 3 1 , 1 N 3 2 4 6 ,1 N 3 2 4 6 R , 3 2 5 0 R .1 N 3 2 5 1 .1 N 3 2 5 1 R .IN 3 2 5 2 lN I1 9 9 ,iN 1 1 9 9 A R ,lN 1 1 9 9 B ,1 N 1 1 9 9 8 R , IN I 1 99R IN 1 2 0 0 ,1 N 1 2 0 0 A R ,1 N 1 2 0 0 B ,1 N 1 2 0 0 B R ,1 N 1 2 0 0 R 1 N 1 2 0 1 ,1 N 1 2 0 1 A R ,1 N 1 2 0 1 B .1 N 1 2 0 1 B R ,1 N 1 2 0 1 R 0 A 7 0 ,0 A 7 1 ,0 A 7 3


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PDF 3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 1NA4 sg 4001 diode diode 1n6 1469r iN3495 0a202 diode 1n67a 1N20b 35C10
20680 JRC

Abstract: Germanium Diode aa116 110B6 Germanium itt Elmwood Sensors 2450 Thermal Switch 189-17-F170 1N4465 BA100 diode 1N21 MD1010 Marconi 2026 service manual
Text: €” Tektronix A-MILSTD 750, para. 4031 Method A for tRR ^ 300nsec Method B for tRR < 300nsec FOLLOWING PISST  , €” Ambient B — Base or stud C - Case J — Junction R — Max. reference temp, for specified temp, coeff , not specified A — Ambient B — Base or stud J — Junction C — Case S — Storage FOLLOWING , are shown below: ) N-Type Forward ( b ) S-Type Forward (c) Conventional Diode Characteristic , – ification sheet should be referred to for further derating information. ( b ) (c) TYPICAL DERATING CURVES


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transistor c2060

Abstract: IN939 1N4465 Germanium itt 3N58 C1906 transistor Transistor Shortform Datasheet & Cross References 2n3986 equivalent transistor C943 transistor MSS1000 diode
Text: V 0 - 5 .0 M i c r o w a v e X - b a n d D e t e c t o r f = 9, 3 7 5 M H z M i c r o w a v e X - b a n d D e t e c t o r f = 9, 3 7 5 M H z V n - 5 .0 P h o t o s e n s i t i v e D e v i c e ; V , B to 7 5 dB t o 7 .5 d B t o 7 .5 d B V V to 3.0M 10* ' 3.0M 10* to 14 dB to 14 d B to 14 d B to 14 dB 5.0M 30* 60M 0.1M (d 9 0 V, S e n s i t i v i t y 3 Pd T (m in , 100 75 100 200 300 380 75 75 DS DS DS DS DS DS DS DS DS DS DS B V = 3 oo Sv


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PDF AN-134 transistor c2060 IN939 1N4465 Germanium itt 3N58 C1906 transistor Transistor Shortform Datasheet & Cross References 2n3986 equivalent transistor C943 transistor MSS1000 diode
MC2259

Abstract: MC9713P MC880P mc2257 MC9718P 1N4465 MC9802P 1N4003 germanium diode specification 3N214 2N1256 S P
Text: . Series A © MOTOROLA INC., 1974 "A ll Rights Reserved" B e a m - F i r e d , B E T , C H A I N M A K , , E X b u g , E X O R c i s e r , G l a s s i v a te d , H A N D Y L a b ® , H E P ® , L o c a L o g , m R o d , R e d H e f i d , S u r m e t i c , T h e r m o p a d , T h e r m o w a t t , U n i b l o , e l d R e l i e f E l e c t r o d e are p a t e n t e d b y M o t o r o l a I nc . II Motorola , ■.•s-j-udi.c son .■f.i-: lofo’ ' -riir-v. ^ H y b r id W r S iitfr .- '- .- . . /.‘Iv . ■\ â


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