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1N1204AR GeneSic Semiconductor Inc Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-4,
1N1204A GeneSic Semiconductor Inc Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-4,
JANTXV1N1204A Microsemi Corporation Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN
JANTX1N1204AR Microsemi Corporation Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN
JANTXV1N1204AR Microsemi Corporation Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN
JAN1N1204A Microsemi Corporation Rectifier Diode, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN
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1N1204A Solid State Manufacturing Allied Electronics & Automation - $2.65 $2.42
1N1204A Vishay Intertechnologies Avnet - $2.79 $2.49
1N1204A International Rectifier New Advantage Corporation 9 - -
1N1204A New Jersey Semiconductor Products, Inc. Bristol Electronics 1,709 - -
1N1204A International Rectifier Bristol Electronics 100 - -
1N1204A SSI Bristol Electronics 32 $4.14 $2.07
1N1204AJAN General Instrument ComS.I.T. 61 - -
1N1204AR New Jersey Semiconductor Products, Inc. Bristol Electronics 1,217 - -
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380AA001N1204A Glenair Inc Powell Electronics 15 $399.21 $213.53
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JANTX1N1204A Microsemi Corporation Chip1Stop 1,321 $46.00 $26.70
JANTX1N1204A Microsemi Corporation New Advantage Corporation 5 - -
VS-1N1204A Vishay Intertechnologies Allied Electronics & Automation - $3.73 $3.04

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1N1204/A datasheet (55)

Part Manufacturer Description Type PDF
1N1204A America Semiconductor DO4 STUD DEVICES STANDARD RECTIFIER; IF::12A; case_package::DO4 Original PDF
1N1204A Diotec Silicon Power Rectifiers Original PDF
1N1204A GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE GEN PURPOSE 400V 12A DO4 Original PDF
1N1204A International Rectifier Original PDF
1N1204A Semikron Diode, 12A, 400V, Silicon Power Diode Original PDF
1N1204A Sussex Semiconductor Power Rectifier Devices Original PDF
1N1204A ABB Group Power Semiconductor Data Book 1976 Scan PDF
1N1204A Advanced Semiconductor General Purpose Rectifiers / TRIACs Scan PDF
1N1204A America Semiconductor 1N1204 - DO4 STUD DEVICES STANDARD RECTIFIER; IF::12A; case_package::DO4 Scan PDF
1N1204A Continental Device India 12 and 25 Amp General Purpose Diodes Scan PDF
1N1204A Coors Components Silicon Power Rectifiers 12 Amp Scan PDF
1N1204A Coors Components Silicon Power Rectifiers 22 Amp Scan PDF
1N1204A Diodes Silicon Rectifiers Scan PDF
1N1204A Diodes SILICON RECTIFIERS Scan PDF
1N1204A EDAL Industries General Purpose Silicon Rectifier, DO-4 Scan PDF
1N1204A EDAL Industries Silicon Rectifier Scan PDF
1N1204A General Diode Stud Mounted Silicon Power Rectifiers Scan PDF
1N1204A General Electric Semiconductor Data Book 1971 Scan PDF
1N1204A General Electric Semiconductor Data Handbook 1977 Scan PDF
1N1204A International Rectifier 12 Amp Medium Power Silicon Rectifier Diode Scan PDF

1N1204/A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
DIODE 1N1206A

Abstract: 1n1124r 1N1128A 1N1202A 1N1204A 1N1126A 1N3649 1N3671A 1N3673A x 260f
Text: MIL-PRF-19500, for the 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650. For normal and reverse ( A , R, RA and AR , figure 2 (JANHC and JANKC). 1.3 Maximum ratings. Type VRWM V dc IO 1/ TC = 150°C A dc If(surge) TC = 150°C T = 1/120 s A pk trr µs Barometric pressure (reduced) mmHg TJ and TSTG ° C 1N1202A 200 12 1/ 240 N/ A 10 -65 to +200 1N1204A 400 12 1/ 240 8 10 -65 to , . AMSC N/ A DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited. FSC 5961


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PDF MIL-PRF-19500/260F MIL-PRF-19500/260E 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A 1N1124A, 1N1126A, 1N1128A, DIODE 1N1206A 1n1124r 1N1128A 1N1202A 1N1204A 1N1126A 1N3649 1N3671A x 260f
2010 - 1N1202A JANTX microsemi

Abstract: 1N1202A 10-32NF-2B 1N1206A JANTX FED-STD-H28 1N1206AR 1N1206A 1N3673A JANTXV 1N1204AR 1N1204A
Text: 400 600 800 1000 V IF 12 A Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 200°C, T = 1/120s IFSM 240 A Thermal Resistance, Junction to Case Rjc 2.0 , 1N1206A 1N3671A 1N3673A 1N1202AR 1N1204AR 1N1206AR 1N3671AR 1N3673AR IR 5 A 1N1202A


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PDF MIL-PRF-19500/260 1N1202A 1N1204A 1N1206A 1N1202AR 1N1204AR 1N1206AR 1N3671A 1N3673A 1N3671AR 1N1202A JANTX microsemi 1N1202A 10-32NF-2B 1N1206A JANTX FED-STD-H28 1N1206AR 1N1206A 1N3673A JANTXV 1N1204AR 1N1204A
1N1342

Abstract: 1N1199 1N1202 1N1124 1N1581 1N1201 1N1348 1N13468 1N1200 1N1200A
Text: _ 83D 001723) Hr. 17_ A3 DE[fll3bbSD DD0D17E fi 6 AMP -D04 JEDEC Peak Numbers Reverse Voltage 1N1341, 1N1341 A , 1N1341B, 1N1581, 50 1N1612, 1N2228, 1N2491 1N1342, 1N1342A, 1N1342B, 1N1582 , , 1N2497 700 1N2240 800 12AMP-D04 JEDEC ⠀¢ Peak Numbers Reverée Voltage 1N1199, 1N1199A , , 1N5331 1200 Dim. Inches Millimeters Notes Minimum Maximum Minimum Maximum A 1 B 44 .47 11.11 11.89 C 42 .44 10.77 11.10 2 D . ⠀” .72 _ 18.26 E 09 ⠀” 1.52 _ F ⠀” .20 ⠀” 5.16 Notel: No


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PDF DD0D17E 1N1341, 1N1341 1N1341B, 1N1581, 1N1612, 1N2228, 1N2491 1N1342, 1N1342A, 1N1342 1N1199 1N1202 1N1124 1N1581 1N1201 1N1348 1N13468 1N1200 1N1200A
1N1124A

Abstract: DIODE 1N1206A 1N3673A 1N3671A 1N3649 1N1206A 1N1204A 1N1202A 1N1128A 1N1126A
Text: normal and reverse ( A , R, RA, and AR suffix) type devices see 3.4.1. 1.2 Physical dimensions. See , IO TC = 150°C Barometric pressure (reduced) TJ and TSTG A pk A dc 12 12 12 12 12 , ) (3) (3) mmHg ° 240 240 240 240 240 25 25 25 25 25 N/ A 8 16 30 54 8 8 16 , AMSC N/ A FSC 5961 MIL-PRF-19500/260L 1.3 Maximum ratings. Unless otherwise specified, TC = , handbooks. The following specifications, standards, and handbooks form a part of this document to the


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PDF MIL-PRF-19500/260L MIL-PRF-19500/260K 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, 1N1124A, 1N1126A, 1N1128A, 1N1124A DIODE 1N1206A 1N3673A 1N3671A 1N3649 1N1206A 1N1204A 1N1202A 1N1128A 1N1126A
245A-02

Abstract: 1N1206A IN1204A 1N1200A 1N1202A diode 160a motorola IN1206A 1N1204A 1N1202RA 1N1199A
Text: 703 1N1199A thru 1N1206A hot? 1N1204A I» a Motorola Preferred Device MEDIUM-CURRENT SILICON RECTIFIERS Silicon rectifiers for medium-currenl applications requiring ⠀¢ High Current Surge ⠀” 240 Amperes @ Tj = 200°C ⠀¢ Peak Performance at Elevated Temperature ⠀” 12 Amperes @ Tc = 150 , Current (Surge applied at rated load conditions, half wave, single phase 60 Hz) 'FSM  «-240 (for 1 cycle)- ⠀” Amp Operating and Storage Junction Temperature Range TJ Tstg ⠀”-65 to +200 - ⠀” °C


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PDF 1N1199A 1N1206A 1N1204A 1199a 1202a 1204a 1206a 1N1199A 1N1200A 1N1202A 245A-02 1N1206A IN1204A diode 160a motorola IN1206A 1N1202RA
B 1032 BROWN BOVERI

Abstract: BROWN BOVERI diode BBC bbc B 1032 10-32 UNF 2A S20410 1N1200A R20410 1N1202A 1N1200
Text: Steel stud and base with a # 10-32 UNF-2A thread for through mounting on a heat sink. Nickel plating , Notes Minimum Maximum Minimum Maximum A 1 B 44 47 11.11 11.89 C 42 44 10.77 11.10 2 D ⠀” 72 ⠀” 18.26 E 09 ⠀” 1.52 ⠀” F ⠀” 20 ⠀” 5.16 Note 1: No. 10-32 UNF-2A Note 2: Hex. Across


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PDF D-6840 S20410 R20410 1N1200, 1N1200A S20420 R20420 1N1202, 1N1202A S20430 B 1032 BROWN BOVERI BROWN BOVERI diode BBC bbc B 1032 10-32 UNF 2A 1N1200
Not Available

Abstract: No abstract text available
Text: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features ⠀¢ High Surge Capability ⠀¢ Types up to 1000 V VRRM DO-4 Package Note: 1. Standard , 50 100 200 400 600 V 400 600 Continuous forward current IF TC ⠉¤ 150 °C 12 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 240 240 240 240 240 A Operating temperature


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PDF 1N1199A 1N1206AR 1N1200A 1N1202A 1N1204A 1N1206A
DIODE 1N1206

Abstract: 1N1206 1N1199 1N1202 1N1200 1N1204 1N1199A 1N1206AR
Text: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A , 12 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 240 240 240 240 240 A Operating temperature Storage temperature , Conditions 1N1199 (R) 1N1200 (R) 1N1202 (R) 1N1204 (R) 1N1206 (R) Unit V IF = 12 A , Tj = 25 °C VR , 15 1.1 10 15 A mA 2.00 2.00 2.00 2.00 2.00 °C/W Thermal characteristics


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PDF 1N1199A 1N1206AR 1N1199 1N1200 1N1202 1N1204 1N1206 DIODE 1N1206 1N1206 1N1199 1N1202 1N1200 1N1204 1N1206AR
DIODE 1N1206A

Abstract: No abstract text available
Text: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features ⠀¢ High Surge Capability ⠀¢ Types up to 1000 V VRRM DO-4 Package Note: 1. Standard , 50 100 200 400 600 V 400 600 Continuous forward current IF TC ⠉¤ 150 °C 12 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 240 240 240 240 240 A Operating temperature


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PDF 1N1199A 1N1206AR 1N1200A 1N1202A 1N1204A 1N1206A DIODE 1N1206A
DIODE 1N1206

Abstract: GM300 S20410 R20420 R20410 1N1202A 1N1202 1N1200A 1N1200 JEDEC do-204
Text: C00RS COMPONENTS INC &g DElsMHDDOb □□□□□35 ⠖¡ |" 1 ~ 2430006 COORS COMPONENTS INC ' ⠀” I 1 820 00032 0 T"- 0|-/7 I Silicon Power Rectifiers Series 204 I 12 AMPAvg; VRRMto600\folts ⠀¢ ⠖ High surge current capability ⠖ High case temperature ⠖ Glass to metal construction, ⠖ Designed for medium voltage and low cost applications Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A ⠀” ⠀” ⠀” ⠀” B .427 .437 10.84 11.09 C ⠀”- .505 ⠀” 12.82 D ⠀” .800 â


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PDF C00RS VRRMto600\folts gM300Db D0DDD35 DIODE 1N1206 GM300 S20410 R20420 R20410 1N1202A 1N1202 1N1200A 1N1200 JEDEC do-204
S2120

Abstract: 1N1204 1N1204A 1N2254 1N2785 1N3965 1N4507 S2140 S2160
Text: Maximum Minimum Maximum Notes A B .424 .437 10.77 11.10 1 C - .505 - 12.82 D .600 .800 15.24 20.32 E , ) Microsemi JEDEC Peak Reverse Catalog Number Numbers voltage Standard ⠙¦S2120 200V •S2140 1N1204, 1N1204A, 1N2254, 1N2785, 400V 1N 3620, 1N3965, 1N4507 ⠙¦S2160 1N1206, 1N1206A, 1N2258, 1N3622 600V 1N3966, 1N4508 *s2iao 1N2260, 1N3623, 1N3671, 1N3671A 800V IN 3967, 1N4509 ⠀¢ S21100 1N2262, 1N3624 , part number for Reverse Polarity ⠀¢ Glass Possivated Die ⠀¢ Low Forward Voltage ⠀¢ 250A Surge Rating


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PDF S/R21 D0203AA S2120 S2140 1N1204, 1N1204A, 1N2254, 1N2785, 1N3965, 1N4507 S2120 1N1204 1N1204A 1N2254 1N2785 1N3965 1N4507 S2160
IN1200

Abstract: No abstract text available
Text: Polarity: Stud Is Cathode Reverse Polarity. Stud is Anode A B C D E F G H J M N P 1 , 4) Mlcrosemi Catalog Number Standard JEDEC Numbers Peak Reverse Voltage ⠀¢ Glass Passivated Die ⠀¢ Low Forward Voltage »S204IO »S20420 »S20440 *S20460 •S20480 »S204100 â , 600V 800V 1000V 1200V ⠀¢ 250A Surge Rating ⠀¢ Glass to m etal construction ⠀¢ VRRM to 1200V ⠀¢ Excellent reliability »Change S to R In part number for Reverse Polarity Electrical


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PDF S/R204 0D03424 IN1200
1996 - Not Available

Abstract: No abstract text available
Text: 1N1206A-1N3673A E A IF(AV) IFSM 12 A 240A TC = 150°C 8.3ms, half sine DIMENSIONS INCH ES MIN 10-32 , 1.35V IFM = 12.0A; TJ = 25°C* IR 3000µA 2500µA 2000µA 1500µA 1000µA TJ = 25°C DIM A B C D


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PDF 1N1199A 1N3673A 1N1200A 1N1202A 1N1204A 1N1206A 1N3671A
1996 - 1N1199A

Abstract: No abstract text available
Text: 1N1206A-1N3673A E A IF(AV) IFSM 12 A 240A TA = 150°C 8.3ms, half sine DIMENSIONS VF 1.35V IFM = 12.0A; TJ = 25°C* TJ = 25°C IR 3000µA 2500µA 2000µA 1500µA 1000µA DIM A B C D E F G H J M


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PDF 1N1199A 1N3673A 1N1200A 1N1202A 1N1204A 1N1206A 1N3671A
1N1128

Abstract: 1N1124 1N119 1N120 1N1201A M600400 1N1200A 1N1200 1N1199B 1N1199
Text: Maximum Notes A _ _ _ _ 1 B .424 .437 10.77 11.10 C - .505 - 12.82 D .600 .800 15.24 , Standard 1N1199, 1N1199A, 1N1199B 50V ⠙¦S20410 1N1200, 1N1200A, 1N1200B 100 V 1N1201, 1N1201A, 1N1201B 150 V ⠙¦S20420 1N1124. A , 1N1202, 1N1202A, 1N1202B 200V 1N1125. A , 1N1203, 1N1203A, 1N1203B 300V ⠙¦S20440 1N1126. A , 1N1204, 1N1204A, 1N1204B 400V 1N1127. A , 1N1205, 1N1205A, 1N1205B 500V ⠙¦S20460 1N1128. A , 1N1206, 1N1206A, 1N1206B 600V ⠙¦S20480 800V ⠙¦S204100 1000V ⠙¦S204120 1200V ⠙¦Change


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PDF S/R204 D0203AA 1N1199, 1N1199A, 1N1199B S20410 1N1200, 1N1200A, 1N1200B 1N1201, 1N1128 1N1124 1N119 1N120 1N1201A M600400 1N1200A 1N1200 1N1199
1N4508

Abstract: 1N5331 Diode coors DIODE 1N1206 1N2254 1N1204A 1N1204 R2160 R21120 R2140 SILICON POWER RECTIFIER
Text: flä DE |543DD0b D00DD40 0 Series 21 0 r- o,-/7 - ⠖ Glass to metal construction ⠖ Low forward voltage drop ⠖ Excellent reliability ⠖ 250 amps surge rating provides high ln-rush current capability Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A ⠀” ⠀” ⠀” ⠀” 1 B .427 .437 10.84 11.09 C ⠀” .505 - ⠀” 12.82 D ⠀” .800 ⠀” 20.32 E .432 .442 10.97 11.21 F .095 .105 2.41 2.66 G ⠀” .386 ⠀” 9.80 H .163 .189 4.15 4.80 2 J ⠀” .250 ⠀” 6.35 M ⠀” .280 â


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PDF 543DD0b D00DD40 1N4508 1N5331 Diode coors DIODE 1N1206 1N2254 1N1204A 1N1204 R2160 R21120 R2140 SILICON POWER RECTIFIER
d047

Abstract: S20410 1N1201 1N1200B 1N1200A 1N1200 1N1199B 1N1199A 1N1199 S20460
Text: Minimum Maximum Minimum Maximum Notes A _ _ _ _ 1 B .424 .437 10.77 11.10 C - .505 - 12.82 , Standard 1N1199, 1N1199A, 1N1199B 50V ⠙¦S20410 1N1200, 1N1200A, 1N1200B 100 V 1N1201, 1N1201 A , 1N1201B 150 V ⠙¦S20420 1N1202, 1N1202A, 1N1202B 200V 1N1203, 1N1203A, 1N1203B 300V ⠙¦S20440 1N1204, 1N1204A, 1N1204B 400V 1N1205, 1N1205A, 1N1205B 500V ⠙¦S20460 1N1206, 1N1206A, 1N1206B 600V ⠙¦S20480 800V ⠙¦S204100 1000V ⠙¦S204120 1200V ⠙¦Change S to R in part number for Reverse Polarity For


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PDF S/R204 D0203AA 1N1199, 1N1199A, 1N1199B S20410 1N1200, 1N1200A, 1N1200B 1N1201, d047 1N1201 1N1200A 1N1200 1N1199A 1N1199 S20460
Not Available

Abstract: No abstract text available
Text: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 12 A Features ⠀¢ High Surge Capability ⠀¢ Types from 50 V to 600 V VRRM DO-4 Package ⠀¢ Not ESD , IF TC ⠉¤ 150 °C 12 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 240 240 240 240 240 A , IF = 12 A , Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 175 °C 1.1 10 15 1.1 10 15


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PDF 1N1199A 1N1206AR 1N1200A 1N1202A 1N1204A 1N1206A DO-203AA)
1N4537

Abstract: 1n3565 1N3574 1N4540 1N357 1N2370A 1N2512 1N3775 1n3923
Text: SEHICON COMPONENTS INC 2flE D ⠖ 5135157 ⠖¡000S34 7 ⠖ STANDARD RECOVERY RECTIFIERS STUD , NUMBER VOLTS V °C AMPERES AMPS °C ha °C nS RATIO AMPS 1n2362a 1400 2.0 25 8.0 5.0 25 10 25 n/ a 20 1n2364 1500 2.0 25 1.5 1.0 25 1 25 n/ a 15 1n2364a 1500 2.0 25 8.0 5.0 25 1 25 n/ a 20 1n2366 1600 2.0 25 1.5 1.0 25 1 25 n/ a 15 1n2366a 1600 2.0 25 8.0 5.0 25 1 25 n/ a 20 1n2368 1800 2.0 25 1.5 1.0 25 1.0 25 n/ a 15 1n2368a 1800 2.0 25 8.0 5.0 25 1.0 25 n/ a 20 1n2370 2000 2.0 25 1.5 1.0 25 1.0


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PDF 000S34 1n2362a 1n2364 1n2364a 1n2366 1n2366a 1n2368 1n2368a 1n2370 1n2370a 1N4537 1n3565 1N3574 1N4540 1N357 1N2512 1N3775 1n3923
A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode diode 1N5825 1N5815 Diode TRANSISTOR A52 1N4822
Text: 2848352 DIODE TRANSISTOR CO INC RECTIFIERS 2TC 00098 D 7^0/- O/ ETMT| 5Ö403SE ODDODTfl b DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N1183 D05 1N1615 D04 1N3743 D09 1N4006 D041 1N5002 M176 A 1N1185 D05 1N1616 D04 1N3744 D09 1N4007 D041 1N5331 D04 1N1185A D05 1N1617 A52 1N3880 D04 1N4044 D09 1N5332 D05 1N1186 D05 1N1618 A52 1N3882 D04 1N 4045 D09 1N5400 A39 1N1186A D05 1N2152 D010 , 1N3739 D09 1N4002 D041 1N4997 M176 A 1N5831 D04 1N1343 S26 1N3740 D09 1N4003 D041 1N4998 M176 A 1N5832


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PDF 403SE 1N1183 1N1615 1N3743 1N4006 1N5002 1N1185 1N1616 1N3744 1N4007 A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode diode 1N5825 1N5815 Diode TRANSISTOR A52 1N4822
1N1199

Abstract: 1N1199A 1N1199B 1N1200 1N1200A S20410 S20420 S20440
Text: Maximum Notes A _ _ _ _ 1 B .424 .437 10.77 11.10 C - .505 - 12.82 D .600 .800 15.24 , .100 1.78 2.54 Dia D0203AA (D04T Microsemi Catalog Number Standard ⠙¦S20410 ⠙¦S20420 ⠙¦S20440 JEDEC Numbers 1N1199, 1N1199A, 1N1199B 1N1200, 1N1200A, 1N1200B 1N1201, 1N1201 A , 1N1201B 1N1124. A , 1N1202, 1N1202A, 1N1202B 1N1125. A , 1N1203, 1N1203A, 1N1203B 1N1126. A , 1N1204, 1N1204A, 1N1204B 1N1127. A , 1N1205, 1N1205A, 1N1205B 1N1128. A , 1N1206, 1N1206A, 1N1206B ⠙¦S20460 ⠙¦S20480 ⠙¦S204100 ⠙¦S204120 â


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PDF S/R204 D0203AA S20410 S20420 S20440 1N1199, 1N1199A, 1N1199B 1N1200, 1N1200A, 1N1199 1N1199A 1N1200 1N1200A S20410 S20420 S20440
S20460

Abstract: S20410 1N1201B 1N1201 1N1200B 1N1200A 1N1200 1N1199B 1N1199A 1N1199
Text: Silicon Power Rectifier S/R204 Series 1 J h à ¯ n rn^? A ⠀” i 1 E 1 Anode Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A _ _ _ _ 1 B .424 .437 10.77 11.10 C - , Number Numbers Voltage Standard 1N1199, 1N1199A, 1N1199B 50V ⠙¦S20410 1N1200, 1N1200A, 1N1200B 100 V 1N1201, 1N1201 A , 1N1201B 150 V ⠙¦S20420 1N1124. A , 1N1202, 1N1202A, 1N1202B 200V 1N1125. A , 1N1203, 1N1203A, 1N1203B 300V ⠙¦S20440 1N1126. A , 1N1204, 1N1204A, 1N1204B 400V 1N1127. A , 1N1205, 1N1205A


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PDF S/R204 D0203AA 1N1199, 1N1199A, 1N1199B S20410 1N1200, 1N1200A, 1N1200B 1N1201, S20460 1N1201B 1N1201 1N1200A 1N1200 1N1199A 1N1199
1NI200A

Abstract: MJ-185 S20460 S20440 S20420 S20410 1N1204A 1N1204 1N1202A 1N1202
Text: Minimum Maximum Notes A _ _ _ _ 1 B .424 .437 10.77 11.10 C - .505 - 12.82 D .600 .800 15.24 , »S204100 1000V «S204120 1200V »Change S to R in part number for Reverse Polarity D0203AA (DQ4) ⠀¢ Glass Passlvated Die ⠀¢ Low Forward Voltage ⠀¢ 250A Surge Rating ⠀¢ Glass to metal construction ⠀¢ VRRM to 1200V ⠀¢ Excellent reliability Electrical Characteristics Average forward current Maximum , Typical Forward Characteristics 1000 800 600 400 200 100 80 60 40 u 20 E 10 i I 8.0 3 B.n TJ  ¡4,0  § 2.0


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PDF S/R204 S20410 1N1200, 1NI200A S20420 1N1202, 1N1202A S20440 1N1204, 1N1204A MJ-185 S20460 1N1204 1N1202
JANTX1N1202A

Abstract: No abstract text available
Text: 260 260 260 260 260 260 260 S e c tio n O rg a n iz a iio n : S ta n d a rd R e c o v e ry R e c tifie r P a ra m e tric S e c tio n Is o rg a n iz e d ¡ay a s c e n d in g 10 (am ps), fo llo w e d b y a s c e n d in g V R (v o lts }, and th e n b y P a rt N u m b e r G enera) N ote s: 1. In fo rm a tio n o n c o n ta c tin g M ic ro s e m i D iv is io n s can b e o b ta in e d o n th e b a c k c o v e r o* t h is c a ta lo g 2 F o rw a rd V o lta g e (VF) w h e n s p e c ifie d is at th e ra te d


OCR Scan
PDF REC-14 JANTX1N1202A
1N1115

Abstract: 1N255 MR1121 1N1118 1N254 1N1540 1N1116 MR1120R 1N1117 1N611
Text: (non-repetltlve, 1msec A (rms)2a Maximum Junction Operating and Storage Temperature , CURRENT (AMP) FORWARD POWER DISSIPATION MAXIMUM ALLOWABLE SURGE CURRENT IV 250  £ I i 200 OS ce 3  £ fi 150 9. S 100 S \ SURGE APPLIED AT RATED LOAD CONDITIONS; Vrm (r«p) APPLIED AFTER SURGE  ® 150°C 8 12 16 20 24 'F(avj. AVERAGE FORWARD CURRENT (AMP) 2 5 10 20 50 100 200 500 , series (types MR1120 -MR1130) provides a high performance, economical solution to your specification and


OCR Scan
PDF MR1128 MR1130 Curre41A 1N349 1N551 1N611 1N553 1N1127A 1N1128 1N3671A 1N1115 1N255 MR1121 1N1118 1N254 1N1540 1N1116 MR1120R 1N1117
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