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Part Manufacturer Description Datasheet Download Buy Part
LT1114AMJ Linear Technology IC QUAD OP-AMP, 120 uV OFFSET-MAX, 0.75 MHz BAND WIDTH, CDIP14, 0.300 INCH, CERDIP-14, Operational Amplifier
LT1112AMJ8 Linear Technology IC DUAL OP-AMP, 120 uV OFFSET-MAX, 0.75 MHz BAND WIDTH, CDIP8, 0.300 INCH, CERDIP-8, Operational Amplifier
LT1128AMJ8 Linear Technology IC OP-AMP, 120 uV OFFSET-MAX, 20 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1078CS8 Linear Technology IC DUAL OP-AMP, 120 uV OFFSET-MAX, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1211MN8 Linear Technology IC DUAL OP-AMP, 120 uV OFFSET-MAX, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LT1028AMH Linear Technology IC OP-AMP, 120 uV OFFSET-MAX, 75 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier

1MBI200S-120 datasheet (2)

Part Manufacturer Description Type PDF
1MBI200S120 Fuji Electric IGBT Module Scan PDF
1MBI200S-120 Fuji Electric TRANS IGBT MODULE N-CH 1200V 300A 4M127 Scan PDF

1MBI200S-120 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1996 - 1MBI200S-120

Abstract: DC Motor control IGBT FUJI ELECTRIC igbt modules fuji transistor module igbt welding fuji servo drive igbt catalog product FUJI Fuji Semiconductors IGBT 200A 1200V igbt catalog
Text: 1MBI200S-120 IGBT Modules IGBT MODULE (S series) 1200V / 200A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for , . max. 0.085 0.22 0.0125 - Units °C/W 1MBI200S-120 IGBT Modules Characteristics (Representative) 2 1MBI200S-120 IGBT Modules 3 1MBI200S-120 IGBT Modules 4 1MBI200S-120 IGBT Modules Outline Drawings, mm Equivalent Circuit Schematic 5 1MBI200S-120 IGBT


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PDF 1MBI200S-120 1MBI200S-120 DC Motor control IGBT FUJI ELECTRIC igbt modules fuji transistor module igbt welding fuji servo drive igbt catalog product FUJI Fuji Semiconductors IGBT 200A 1200V igbt catalog
2001 - 1MBI200S-120

Abstract: welding inverter 200A 1mbi200
Text: 1MBI200S-120 IGBT Module 1200V / 200A 1 in one-package Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC , cooling fin with thermal compound IGBT Module 1MBI200S-120 Characteristics Collector current vs , ] 0 IGBT Module 1MBI200S-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE , Module 1MBI200S-120 Reverse recovery characteristics (typ.) Vcc=600V, VGE=+-15V, Rg


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PDF 1MBI200S-120 1MBI200S-120 welding inverter 200A 1mbi200
2003 - 1MBI300SA-120

Abstract: 1MBI400JN-120-01 1MBI300JN-140 1MBI400JN-120 1MBI300SA120 1mbi400jn120 M237 1MBI200S-120 1MBI300JN120 1MBI30L-060
Text: 1MBI200N-120 1200 3.3 200 1500 0.085 M127 Active - UL Approved PDF 1MBI200S-120


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PDF 1MBI200F-120 1MBI200L-120 1MBI200N-120 1MBI600PX140 1MBI750LP060 1MBI75L-060 1MBI800PN180 1MBI600U-120 1MBI600LN140 1MBI600LP060 1MBI300SA-120 1MBI400JN-120-01 1MBI300JN-140 1MBI400JN-120 1MBI300SA120 1mbi400jn120 M237 1MBI200S-120 1MBI300JN120 1MBI30L-060
irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: No file text available


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PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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