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PMP7177.6 Texas Instruments Non-Isolated LDO for Transportation/Automotive using TPS73201 w/ input of 1.8 VDC 1.3V@0.22A
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1776-C3 Precision Decade Voltage Divider Network 1776-C3 ECAD Model
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1776-C3 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
1776-C3 1776-C3 ECAD Model Caddock Electronics Type 1776 Precision Decade Resistor Voltage Dividers Scan PDF
1776-C34 1776-C34 ECAD Model Caddock Electronics Type 1776 Precision Decade Resistor Voltage Dividers Scan PDF

1776-C3 Datasheets Context Search

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2008 - MA-106

Abstract: LMH2180 AN1776
Text: , R8 0603 510 k TP2TP4 C1 Case B, 10 µF 16 V C2, C5, C8 0603 100 nF C3


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PDF 75MHzLMH2180 LMH218075 LMH2180 LMH2180LLP mA106 LMH218020 LMH2180PCB MA-106 LMH2180 AN1776
2004 - 48v regulator by lm317

Abstract: 10V30V MBRS1100 diagram an 7522 smd transistor 847 lm317 substitution LT1676 TPSD156M035R0300 DO3316P-224 DO3316P-154
Text: 3 D1 MBRS1100 7 8 C3 2200pF X7R R3 22k 5% + C2 100µF 10V R1 36.5k 1 , 8 VC C3 2200pF R2 12.1k 1% C4 100pF 4 VOUT 5V 0mA to 400mA 70 EFFICIENCY , TPSD156M035R0300 (803) 946-0362 C2: AVX D CASE 100µF 10V TPSD107M010R0080 C3 : 2200pF, X7R VIN = 20V 30 , C3 100pF VOUT 5V R1 39k 5% R2 10k 5% V+ OUT 90 80 VIN = 12V 70 4 IN ­ + , U1 LT1776 3 VSW 8 SYNC VC GND 6 L1 100µH C4 2200pF C3 100pF 4 U3 LT1121


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PDF LT1676 LT1776 frequencies--100kHz 200kHz LT1776. 700mA, 500m1675; 100MHz LT1675 48v regulator by lm317 10V30V MBRS1100 diagram an 7522 smd transistor 847 lm317 substitution TPSD156M035R0300 DO3316P-224 DO3316P-154
1999 - 1776-232

Abstract: C6117 1776-C542 1776-C62 1776-C621 caddock 1776-C62 1776-c34 1776-C6117 1776-C73 1776-C531
Text: 0.01 0.005 0.01 1776-C3 10 Meg 1.1111M 101.01K 10.01K 1.0001K 8 1200 0.5 0.5 50 50 0.5 0.04 0.02 0.04 1776-C34 10 Meg 1.1111M 101.01K 10.01K 1.0001K 8 1200 , PIN 1 .050 (1.27) 5 Figure 9 CADDOCK 9550 1776-C34 PIN 1 4 .010 ±.002 (.26


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PDF IL-118 1776-232 C6117 1776-C542 1776-C62 1776-C621 caddock 1776-C62 1776-c34 1776-C6117 1776-C73 1776-C531
C6117

Abstract: U1400 1776-C532 C621 1776-C62 1776-C621 1776-C6117 1776-C611 1776-C61 1776-C44
Text: 101.01K 10.01K 1.0001K 8 1200 0.1 0.02 30 10 0.1 0.01 0.005 0.01 1776-C3 10 Meg 1.1111M 101.01K 10.01K 1.0001K 8 1200 0.5 0.5 50 50 0.5 0.04 0.02 0.04 1776-C34 10 Meg 1.1111M 101.01K 10.01 K 1.0001K 8 1200


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PDF 17flTb00 000030b RATI01 C6117 U1400 1776-C532 C621 1776-C62 1776-C621 1776-C6117 1776-C611 1776-C61 1776-C44
1998 - smd transistor 43T

Abstract: No abstract text available
Text: LT1776 FB VC SYNC + 7 C2 100µF 10V R1 36.5k 1% 8 C3 2200pF X7R R3 22k 5 , GND 4 VOUT + C2 R1 7 8 C3 C4 R2 R3 1776 F05 Figure 5. User Programmable , 7 VOUT 5V 0mA to 400mA 8 C3 C4 R2 12.1k 1% R3 22k 5% GND 4 1776 F06a C1: PANASONIC HFQ 39µF AT 63V C2: AVX D CASE 100µF 10V TPSD107M010R0080 C3 : 2200pF, X7R C4 , BREAKDOWN OF <7V CAN BE USED 2 1 R1 39k 5% R2 10k 5% C3 100pF 4 VOUT 5V R5 22k


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PDF LT1776 700mA 200kHz 400kHz LT1375/LT1376 500kHz LT1375) LT1620 LT1676 100kHz smd transistor 43T
1998 - smd transistor 43t

Abstract: theory of regulated 9v power supply using LM317 0-30v power supply 1.5A with LM317 7.4v battery charger SMD f06a smd diode marking G12 lm317 external Tantalum cap rl 205 diode lm317 so-8 SMD TRANSISTOR MARKING 6B
Text: LT1776 7 FB 8 VC SYNC C3 2200pF X7R R3 22k 5% GND 4 + C4 100pF C2 100µF , GND 4 VOUT + D1 C2 R1 7 8 C3 C4 R2 R3 1776 F05 Figure 5. User , SYNC C3 C4 R2 12.1k 1% R3 22k 5% GND 4 VOUT 5V 0mA to 400mA 1776 F06a C1: PANASONIC HFQ 39µF AT 63V C2: AVX D CASE 100µF 10V TPSD107M010R0080 C3 : 2200pF, X7R C4, C5: 100pF, X7R , (T3) L1: COILCRAFT DO3316-104 2 1 R1 39k 5% R2 10k 5% C3 100pF 4 VOUT 5V


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PDF LT1776 700mA 200kHz 400kHz LT1375/LT1376 500kHz LT1375) LT1620 LT1676 100kHz smd transistor 43t theory of regulated 9v power supply using LM317 0-30v power supply 1.5A with LM317 7.4v battery charger SMD f06a smd diode marking G12 lm317 external Tantalum cap rl 205 diode lm317 so-8 SMD TRANSISTOR MARKING 6B
1998 - smd transistor 43t

Abstract: IC LM317 use in 12v charger circuit 0-30v power supply 1.5A with LM317 lm317 substitution LM317 auto charger schottky diode 43t 48v, 20 amp battery charger circuit diagram sn1776 LT1776C LT1776
Text: LT1776 7 FB 8 VC SYNC C3 2200pF X7R R3 22k 5% GND 4 + C4 100pF C2 100µF , GND 4 VOUT + D1 C2 R1 7 8 C3 C4 R2 R3 1776 F05 Figure 5. User , SYNC C3 C4 R2 12.1k 1% R3 22k 5% GND 4 VOUT 5V 0mA to 400mA 1776 F06a C1: PANASONIC HFQ 39µF AT 63V C2: AVX D CASE 100µF 10V TPSD107M010R0080 C3 : 2200pF, X7R C4, C5: 100pF, X7R , R1 39k 5% R2 10k 5% C3 100pF 4 VOUT 5V R5 22k R4 100k 1% R6 2.4M 1776


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PDF LT1776 700mA 200kHz 400kHz LT1375/LT1376 500kHz LT1375) LT1620 LT1676 100kHz smd transistor 43t IC LM317 use in 12v charger circuit 0-30v power supply 1.5A with LM317 lm317 substitution LM317 auto charger schottky diode 43t 48v, 20 amp battery charger circuit diagram sn1776 LT1776C LT1776
1999 - FL 1173

Abstract: Transistor A 1776 PH1516-10
Text: -10 1 OW v2.00 RF Test Fixture "cc GD Q C5 Q El c3 UUTPUT 50 OHMS INPUT 50 OHMS , 50 VOLTS CR1 Ql Rl lN4245 DIODE RLl 6T/NO, Cl c2 BOARD Specifications c3


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PDF PHl516-10 t13Mn, FL 1173 Transistor A 1776 PH1516-10
2008 - Not Available

Abstract: No abstract text available
Text: www.ti.com JR1 R4 510 kÖ JP1 GND C5 100 nF VDD IN1 tp1 J1 U1A C3 2 R3 OPT 10 nF , Capacitor 100 nF C3 , C6 0603 Capacitor 10 nF C4, C7 0603 Capacitor Optional JR1, JR2


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PDF SNAA053B AN-1776 LMH2180
2008 - LMH2180

Abstract: llp-8
Text: Case B, Tantalum Capacitor 10 µF 16V C2, C5, C8 0603 Capacitor 100 nF C3 , C6 0603


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PDF LMH2180 AN-1776 llp-8
GP 836 DIODE

Abstract: PH0810-4 ATC 1084 ic atc 1084 atc 17-18 Transistor 933 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765
Text: G 0 V CC G D INPUT 50 OHMS ARTWORK DIMENSIONS IN MILS PARTS L IS T C l C2 C3


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PDF -30dBc PH0810-4 1N4245) PH0810-4 10T/NO. GP 836 DIODE ATC 1084 ic atc 1084 atc 17-18 Transistor 933 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765
1998 - smd transistor 43t

Abstract: 0-30v power supply 1.5A with LM317 LM317 power supply 0.30 V. 20 amp 1776I lm317 substitution CATALOG TRANSISTOR SMD PNP darlington substitution LT1776CS8 MBR160 SMD f06a
Text: MBRS1100 100µH LT1776 7 FB C2 100µF 10V R1 36.5k 1% 8 VC SYNC + C3 2200pF , + C2 R1 7 C5 6 FB 8 VC SYNC GND 4 C3 C4 R2 R3 1676 F05 Figure 5 , L1 68µH C4 C3 4 50 VIN = 20V 30 VIN = 30V 20 1776 F06a C4, C5: 100pF , : PANASONIC HFQ 39µF AT 63V C2: AVX D CASE 100µF 10V TPSD107M010R0080 C3 : 2200pF, X7R 60 40 VIN = 10V , FB SHDN VC 90 C3 100pF C1: PANASONIC HFQ 39µF AT 63V C2: AVX D CASE 100µF 10V


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PDF LT1776 700mA 200kHz 400kHz LT1374 500kHz LT1375/LT1376 LT1375) LT1620 smd transistor 43t 0-30v power supply 1.5A with LM317 LM317 power supply 0.30 V. 20 amp 1776I lm317 substitution CATALOG TRANSISTOR SMD PNP darlington substitution LT1776CS8 MBR160 SMD f06a
24DO

Abstract: AGM9624A C110 S6B0724 S6B0724A
Text: 0. 20 BO NO SYM L . 1 V0 2 V4 3 V3 4 V2 5 V1 6 C27 C2+ 8 C1+ 9 C110 C3 + 11 , 11 VOUT O DC/DC voltage converter output 10 C3 + O Capacitor3+ for internal DC/DC


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PDF AGM9624A S6B0724A S6B0724) 22erating 24DO AGM9624A C110 S6B0724 S6B0724A
2001 - 7530D

Abstract: No abstract text available
Text: C9 C8 C7 C7 C8 C9 VDS C4 R1 C2 L1 30.0 C6 C5 C6 C1 C3 32.0 Symbol C1, C3 C2


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PDF NE5520279A NE5520279A DCS1800 7530D
2001 - PU10123EJ01V1DS

Abstract: R-4775
Text: 30.0 C6 C5 C6 C1 C3 32.0 Symbol C1, C3 C2 C4 C5 C6 C7 C8 C9 R1 L1 Circuit Board Value 4.7


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PDF NE5520279A NE5520279A DCS1800 PU10123EJ01V1DS R-4775
LC1 F150

Abstract: d 1711
Text: IN MILS P A R T S I 1 S T Cl C2 C3 C4 C5 CRI Ql R1 RL1 BOARD TYPE: 3 3 pF


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PDF PH1516-10 LC1 F150 d 1711
1445s

Abstract: transistor D 1761 PH1617
Text: T S I 1 S T Cl C2 C3 C4 C5 CR1 Q1 R1 RL1 BOARDTYPE: 33 pF ATC SIZE A 4,7 uF 35 VDLTS CHIP 50


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PDF PH1617-10 1445s transistor D 1761 PH1617
2010 - AN-101

Abstract: V585ME46-LF
Text: V585ME46-LF PHASE NOISE (1 Hz BW, typical) Rev C3 Voltage-Controlled Oscillator Surface Mount Module Applications · Satellite Communications · Test Instrumentation · Earthstations £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Application Notes · AN-101: Mounting and , FRM-S-002 B V585ME46-LF Voltage-Controlled Oscillator Surface Mount Module Rev C3 Tuning


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PDF V585ME46-LF AN-101: AN-102: AN-107: MINI-14S MINI-14S-LOW MINI-14S-L FRM-S-002 AN-101 V585ME46-LF
Not Available

Abstract: No abstract text available
Text: V585ME46-LF Rev C3 PHASE NOISE (1 Hz BW, typical) Voltage-Controlled Oscillator Surface Mount Module Applications • Satellite Communications • Test Instrumentation • Earthstations £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Application Notes • AN-101: Mounting and , Rev C3 Tuning Curve, typ. FREQUENCY (MHz) 2220 2140 2060 1980 1900 1820 1740 1660


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PDF V585ME46-LF AN-101: AN-102: AN-107: MINI-14S MINI-14S-LOW MINI-14S-L FRM-S-002
Not Available

Abstract: No abstract text available
Text: V585ME46-LF PHASE NOISE (1 Hz BW, typical) Rev C3 Voltage-Controlled Oscillator Surface Mount Module Applications • Satellite Communications • Test Instrumentation • Earthstations £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927 URL: www.zcomm.com EMAIL: applications@zcomm.com Application Notes • AN-101: Mounting and , FRM-S-002 B Voltage-Controlled Oscillator Surface Mount Module V585ME46-LF Rev C3 Tuning


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PDF V585ME46-LF AN-101: AN-102: AN-107: MINI-14S MINI-14S-LOW MINI-14S-L FRM-S-002
2004 - a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Text: PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W TEST CIRCUIT (f=175MHz) Vdd Vgg C2 C3 , ,2.46mm(outside diameter) ChipCondencer :GRM40 C1, C2: 1000pF Copper board spring t=0.1mm C3 : 10uF


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758
2011 - MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Text: , 175MHz, 12W TEST CIRCUIT (f=175MHz) Vgg C1 C2 C3 W Vdd W L2 24.9nH 47pF 330pF RF-in 35mm , :0.43mm1.66mm(outside diameter) L2:6TurnsD:0.43mm2.46mm(outside diameter) C1C2:1000F C3 : 10F50V INPUT


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19
2010 - mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Text: , 175MHz, 12W TEST CIRCUIT (f=175MHz) Vdd Vgg C2 C3 C1 W 47pF RF-in 35mm W Contact , :GRM40 C1, C2: 1000pF Copper board spring t=0.1mm C3 : 10uF, 50V INPUT / OUTPUT IMPEDANCE VS


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112
2010 - 78s12

Abstract: RD12MVS1-101
Text: SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 Vdd C2 C3 RoHS Compliance, TEST CIRCUIT (f , spring t=0.1mm C3 : 10uF, 50V INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101
2006 - a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Text: Transistor, 175MHz, 12W TEST CIRCUIT (f=175MHz) Vdd Vgg C2 C3 C1 W 47pF RF-in 35mm W , ) ChipCondencer :GRM40 C1, C2: 1000pF Copper board spring t=0.1mm C3 : 10uF, 50V INPUT / OUTPUT IMPEDANCE VS


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112
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