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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
WB2010-1-SM WB2010-1-SM ECAD Model Coilcraft Inc RF Transformer, 0.04MHz Min, 175MHz Max, 1:1, Visit Coilcraft Inc Buy
WB2010-1-PC WB2010-1-PC ECAD Model Coilcraft Inc RF Transformer, 0.04MHz Min, 175MHz Max, 1:1, Visit Coilcraft Inc Buy
WB3010-1-PC WB3010-1-PC ECAD Model Coilcraft Inc RF Transformer, 0.04MHz Min, 175MHz Max, 1:1, Visit Coilcraft Inc Buy
WB1010-1-PC WB1010-1-PC ECAD Model Coilcraft Inc RF Transformer, 0.04MHz Min, 175MHz Max, 1:1, Visit Coilcraft Inc Buy
WB1010-1-SM WB1010-1-SM ECAD Model Coilcraft Inc RF Transformer, 0.04MHz Min, 175MHz Max, 1:1, Visit Coilcraft Inc Buy
WB1010-1-SMLD WB1010-1-SMLD ECAD Model Coilcraft Inc RF Transformer, 0.04MHz Min, 175MHz Max, 1:1, ROHS COMPLIANT Visit Coilcraft Inc
SF Impression Pixel

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NXP Semiconductors
MRFX1K80H-175MHZ MRFX1K80H-175MHZ - Boxed Product (Development Kits) (Alt: MRFX1K80H-175MHZ)
MRFX1K80H-175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas MRFX1K80H-175MHZ Box 0 10 Weeks 2 - $2947.5 $2812.5 $2745 $2745 More Info
Newark MRFX1K80H-175MHZ Bulk 0 1 $3082.5 $2992.5 $2812.5 $2812.5 $2812.5 More Info
Raltron Electronics Corporation
CO6100-25.175MHZ Oscillator XO 25.175MHz ±100ppm 15pF HCMOS/TTL 55% 5V 4-Pin DIP Module Thru-Hole
CO6100-25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Onlinecomponents.com CO6100-25.175MHZ 500 - - - - - More Info
ILSI America LLC
HC49USM-FB3F18-25.175MHZ
HC49USM-FB3F18-25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Onlinecomponents.com HC49USM-FB3F18-25.175MHZ 1,000 - - - $0.094 $0.09 More Info
Master Electronics HC49USM-FB3F18-25.175MHZ 0 - - - $0.094 $0.09 More Info
Nihon Dempa Kogyo Co Ltd
6N/STD1145C-25.175MHZ
6N/STD1145C-25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 6N/STD1145C-25.175MHZ 250 - - - - - More Info
Not Specified
6N/STD1145C25.175MHZ
6N/STD1145C25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 6N/STD1145C25.175MHZ 25 - - - - - More Info
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Seiko Epson Corporation
711STH 53.693175MHZ
711STH 53.693175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 711STH 53.693175MHZ 76 - - - - - More Info
MTRONPTI
RASCOPLUS-25.175MHZ
RASCOPLUS-25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics RASCOPLUS-25.175MHZ 750 - - - - - More Info
KYOCERA Crystal Device Corporation
JXO-7F25.175MHZ
JXO-7F25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics JXO-7F25.175MHZ 920 - - - - - More Info
Nihon Dempa Kogyo Co Ltd
25.175MHZ
25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 25.175MHZ 1,000 - - - - - More Info
Nihon Dempa Kogyo Co Ltd
TD1145C-25.175MHZ
TD1145C-25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics TD1145C-25.175MHZ 2,386 - - - - - More Info
NO INFO
MCO8100-25.175MHZ
MCO8100-25.175MHZ ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics MCO8100-25.175MHZ 5,098 - - - - - More Info
Abracon Corporation
ASM-25.175MHZ-ET Standard Clock Oscillators 25.175MHz 100ppm 5Volt -20C +70C
ASM-25.175MHZ-ET ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Sager ASM-25.175MHZ-ET 0 - - - - - More Info

175MHz Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - RD02MVS1

Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
Text: RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz ,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8 , 2007 (0.22) 3 (0.25) 0.2+/-0.05 High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f= 175MHz , 520MHz High Efficiency: 65%typ. ( 175MHz ) High Efficiency: 65%typ. (520MHz) MITSUBISHI RF POWER MOS , ,Silicon MOSFET Power Transistor 175MHz ,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE , =7.2V, Pin=50mW, f= 175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(Pin Control) f= 175MHz


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PDF RD02MUS1B 175MHz 520MHz RD02MUS1B RD02MUS1 RD02MVS1 T112 mosfet 1412 6D20 mosfet 4501
2006 - RD02MUS2

Abstract: rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
Text: PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz ,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8 , . 2006 (0.22) 3 (0.25) 0.2+/-0.05 ·High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f= 175MHz ,520MHz ·High Efficiency:65%typ.( 175MHz ) ·High Efficiency:65%typ.(520MHz) ·Integrated gate protection , RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz ,520MHz,2W ABSOLUTE MAXIMUM RATINGS , =7.2V, Pin=50mW, f= 175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(Pin Control) f= 175MHz


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PDF RD02MUS2 175MHz 520MHz RD02MUS2 rd02mus TC 4863 DB T112 D 1652 transistor MOSFET RF POWER TRANSISTOR VHF transistor 0882
2009 - RD07MUS2B

Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Text: RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz ,527MHz,7W DESCRIPTION OUTLINE , +/-0.05 1.0+/-0.05 4.9+/-0.15 High power gain and High Efficiency. Gp>13.2dB 58%min. ( 175MHz , °C/W Note: Above parameters are guaranteed independently. *: 175MHz spec. is 0.6W ELECTRICAL , CONDITIONS VDS=17V, VGS=0V VGS=5V, VDS=0V VDS=7.2V, IDS=1mA f= 175MHz ,VDD=7.2V Pin=0.3W,Idq=250mA f=527MHz ,VDD=7.2V Pin=0.4W,Idq=250mA VDD=9.5V,Po=6.3W(Pin Control) f= 175MHz ,Idq=250mA,Zg=50 Load VSWR=20:1


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PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: 28V 28V 28V 250MHz 175MHz 175MHz 175MHz 400MHz 175MHz 175MHz 175MHz 400MHz 400MHz 400MHz 400MHz 50MHz 175MHz 175MHz 175MHz 500MHz 1000MHz 1000MHz 2N4431 2N4440 2N4932 2N4933 , 50MHz 70MHz 400MHz 136MHz 1200MHz 200MHz 200MHz 175MHz 175MHz 175MHz 175MHz 2N5589 2N5590 , 12.5V 12.5V 175MHz 175MHz 175MHz 500MHz 450MHz 400MHz 300MHz 250MHz 200MHz 470MHz 470MHz , 175MHz 175MHz 175MHz 175MHz 400MHz 400MHz 2N5775 2N5847 2N5848 2N5913 2N5918 2N5919 2N5922


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PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
2003 - A 1469 mosfet

Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Text: PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz ,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS , @Vdd=12.5V,f= 175MHz ·High Efficiency: 60%typ. 6.6+/-0.3 1 FEATURES R1.6 3.0+/-0.4 0.10 , =12V, IDS=1mA f= 175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(PinControl) Idq=0.5A,Zg=50 Load , , 175MHz ,30W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE CHANNEL DISSIPATION , DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz ,30W TYPICAL


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PDF RD30HVF1 175MHz RD30HVF1 175MHz A 1469 mosfet Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM mosfet 800 v MITSUBISHI RF POWER MOS FET
2003 - transistor rf m 1104

Abstract: transistor equivalent D 1047 RD02MUS1 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
Text: RD02MUS1 Silicon MOSFET Power Transistor 175MHz ,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 , applications. 4.6+/-0.05 ·High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f= 175MHz ,520MHz ·High Efficiency:65%typ.( 175MHz ) ·High Efficiency:65%typ.(520MHz) 2 LASER MARK (Gate) APPLICATION 0.9 , =50mW, f= 175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(PinControl) f= 175MHz , SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz


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PDF RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 transistor equivalent D 1047 transistor 2439 transistor equivalent 1047 S 170 MOSFET TRANSISTOR transistor 4317 RD02MSU1
2011 - mos 4069

Abstract: No abstract text available
Text: Transistor, 175MHz , 950MHz, 4W DESCRIPTION RD04HMS2 is MOS FET type transistor specifically OUTLINE , , 175MHz , 950MHz, 4W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH , =10V, VDS=0V VDS=12V, IDS=1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f= 175MHz *,VDS=12.5V, Pin=0.2W, Idq , ) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz , 950MHz, 4W TYPICAL CHARACTERISTICS , , 175MHz , 950MHz, 4W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are


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PDF RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Oct2011 mos 4069
2010 - 78s12

Abstract: RD12MVS1-101
Text: RD12MVS1 (0.22) (0.22) RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz , 12W , Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f= 175MHz High Efficiency: 57%typ. ( 175MHz ) 3 (0.25) (0.25 , VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f= 175MHz ,VDD=7.2V Pin=1.0W,Idq=1.0A VDD=9.2V,Po=12W(Pin Control) f= 175MHz ,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN. 1.8 11.5 55 LIMITS TYP. MAX. 10 1 , On PCB(*1) with Heat-sink Silicon MOSFET Power Transistor, 175MHz , 12W DRAIN DISSIPATION VS. AM


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101
2010 - mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Text: PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz , 12W OUTLINE DRAWING , : Pout>11.5W, Gp>12dB@Vdd=7.2V,f= 175MHz High Efficiency: 57%typ. ( 175MHz ) 2 3.5+/-0.05 FEATURES , Drain Efficiency VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f= 175MHz ,VDD=7.2V Pin=1.0W,Idq=1.0A VDD=9.2V,Po=12W(Pin Control) f= 175MHz ,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) Load VSWR , OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz , 12W


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112
2010 - 3M Touch Systems

Abstract: No abstract text available
Text: RD07MVS2 0.2+/-0.05 (0.22) RoHS Compliance,Silicon MOSFET Power Transistor, 175MHz ,520MHz,7W , High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. ( 175MHz ) High Efficiency , ,Silicon MOSFET Power Transistor, 175MHz ,520MHz,7W ABSOLUTE MAXIMUM RATINGS SYMBOL VDSS VGSS Pch Pin ID , =0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f= 175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(Pin Control) f= 175MHz ,Idq=700mA,Zg=50, Load VSWR=20:1(All Phase) VDD=9.2V,Po


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PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) 3M Touch Systems
2011 - transistor rf m 1104

Abstract: No abstract text available
Text: Transistor 175MHz ,520MHz,2W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 DESCRIPTION RD02MUS1 is a , +/-0.15 0.2+/-0.05 2 FEATURES High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f= 175MHz , 520MHz 0.2 , %typ. ( 175MHz ) High Efficiency: 65%typ. (520MHz) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input , ) < Silicon RF Power MOS FET (Discrete) > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz , Drain efficiency VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=50mW, f= 175MHz Idq=200mA VDD=7.2V, Pin


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PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) Oct2011 transistor rf m 1104
2SC1969

Abstract: 2SC2086 2sc1969-"12w FPC-20 2SC2166 2SC19
Text: m^tfitafccfcy'a jgittifflo : «Pillilo Vceo(V) 17 Icbo(M) 100. 00 Vcb=25V, Ie=0 *f= 175MHz Vebo(V) 4 Iebo , =5W(Tc=Z5°C) Po (W) 1.00 1.30 Vcc=13. 5V, Pin=0.12W, f= 175MHz • 2 SC1 9 7 1 EM HjS : VHF (150MHz) ^»«ÌM, 13.5V ì")-X, ¡ti?! 6Wo Ititi 4~5W ntimufSo : Vee=15. 2V, Po=6tf, f= 175MHz ffl® fET 20:1 VSWR Vceo(V) 17 Icbo(ìA) 500.00 Vcb=25V, Ie=0 *f= 175MHz Vebo(V) 4 Iebo(M) 500.00 Veb=3V, le , =13.5V, Pin=0.6W, f= 175MHz • 2 S C1 9 7 2 H® : VHF (150MHz) Ì»®«!«13, 13.5V ->'J-X', ¡ìitl


OCR Scan
PDF 400MHz) 470MHz 470MHz 02SC19 27MHz 27MHz 175MHz 150MHz) 175MHz 2SC1969 2SC2086 2sc1969-"12w FPC-20 2SC2166 2SC19
BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Text: 4 2 4 200MHz 2.5GHz 2.5GHz 2GHz 1GHz 1GHz 1GHz 0.8GHz 175MHZ 175MHz 100MHz 175MHz 175MHz 175MHz , 1GHz 500MHz 175MHz 175MHz 1GHz 2GHz 1GHz 1GHz 1GHz 1GHz 1GHz 2GHz Min. Gain 13db 11 db 11db 13db , to 0.8GHz 1MHz to 175MHz 1MHz to 175MHz 1MHz to 175MHz 1MHz to 175MHz 1MHz to 175MHz 1MHz to 200MHz , 400MHz to 1GHz 1MHz to 1GHz 1MHz to 500MHz 1MHz to 175MHz 1MHz to 175MHz DC-2GHZ DC-2GHZ DC-2GHZ DC


OCR Scan
PDF BFM12 BFM21 BFM22 BFM23 BFM32 BFM33 BFM34 BFM35 D1001UK D1002UK BFM33 BFM34 BFM-12 BFM32 D1022UK D1053UK D1015UK
2006 - transistor D 1666

Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Text: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz ,30W DESCRIPTION OUTLINE , : Pout>30W, Gp>14.7dB @Vdd=12.5V,f= 175MHz High Efficiency: 60%typ. 6.6+/-0.3 1 FEATURES R1 , =0V VDS=12V, IDS=1mA f= 175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(PinControl) f= 175MHz ,Idq , Silicon MOSFET Power Transistor, 175MHz ,30W TYPICAL CHARACTERISTICS RD30HVF1 MITSUBISHI ELECTRIC , OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz ,30W DRAIN


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PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 transistor D 1666 MITSUBISHI RF POWER MOS FET RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
2004 - RD70HVF1

Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Text: , 175MHz70W 520MHz,50W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=10 f=135MHz Zout* f= 175MHz , PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0 , , Gp>10.6dB @Vdd=12.5V,f= 175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz ·High Efficiency: 60 , =10V, VDS=0V VDS=12V, IDS=1mA f= 175MHz ,VDD=12.5V Pin=6W, Idq=2.0A f=520MHz ,VDD=12.5V Pin=10W, Idq=2.0A VDD=15.2V,Po=70W(PinControl) f= 175MHz ,Idq=2.0A,Zg=50 LoadVSWR=20:1(All phase) VDD=15.2V,Po


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PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
2010 - rd07mvs1b101

Abstract: 3M Touch Systems D07MVS1
Text: RD07MVS1B 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz , 2 FEATURES High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz High Efficiency: 60%typ. ( 175MHz , , 175MHz ,520MHz,7W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin , =17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f= 175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(Pin Control) f= 175MHz ,Idq=700mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9.2V,Po


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PDF RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) rd07mvs1b101 3M Touch Systems D07MVS1
2006 - transistor d 1557

Abstract: MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RD06HVF1 Marking TRANSISTOR 737 TRANSISTOR mosfet 9V transistor A 564 RD06HVF1-101 a 1712 mosfet mitsubishi symbol marking
Text: PRECAUTIONS Silicon MOSFET Power Transistor 175MHz ,6W OUTLINE DRAWING 3.6±0.2 9±0.4 4 , 4.8MAX 12.3MIN High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f= 175MHz 12.3±0.6 FEATURES , HANDLING PRECAUTIONS RoHS Compliance, RD06HVF1 Silicon MOSFET Power Transistor 175MHz ,6W , =1mA VDD=12.5V, Pin=0.3W, f= 175MHz , Idq=0.3A VDD=15.2V,Po=6W(Pin Control) f= 175MHz ,Idq=0.3A,Zg=50 Load , Transistor 175MHz ,6W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 5 CHANNEL DISSIPATION Pch(W


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PDF RD06HVF1 175MHz 175MHz RD06HVF1 transistor d 1557 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR Marking TRANSISTOR 737 TRANSISTOR mosfet 9V transistor A 564 RD06HVF1-101 a 1712 mosfet mitsubishi symbol marking
2008 - MAR 618 transistor

Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Text: PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz ,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f= 175MHz , , RD06HVF1 Silicon MOSFET Power Transistor 175MHz ,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS , =0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.3W, f= 175MHz , Idq=0.3A VDD=15.2V,Po=6W(Pin Control) f= 175MHz ,Idq=0.3A,Zg=50 Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6


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PDF RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
2011 - Not Available

Abstract: No abstract text available
Text: Transistor, 175MHz ,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 , value UNIT:mm High Efficiency: 60%typ. ( 175MHz ) High Efficiency: 55%typ. (520MHz) APPLICATION , , 175MHz ,520MHz,7W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER , VDS=12V, IDS=1mA 1.4 1.7 2.4 V Output power f= 175MHz , VDD=7.2V 7 8 - W , D2 VDD=9.2V,Po=7W(Pin Control) Load VSWR tolerance f= 175MHz ,Idq=700mA,Zg=50 No destroy


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PDF RD07MVS1B 175MHz 520MHz RD07MVS1 RD07MVS1B 520MHz
2SC2628

Abstract: 2SC2629 2SC2630 2SC2638 2SC2639
Text: . 5V - y ' J - X , fc tiÿ] 15»o ititi 10- 15W # Ä : Vcc=15. 2V, Po=18W, f= 175MHz ® K fET- 20:1. VSWR C , * * 2.00 2.00 » ffl SE 14 * ft S ft * *f= 175MHz % f > # 1 g Vc b , 180.00 _n_ B<^ E "LT r3 c Po ¡C|Hj U Vcc=12.5V. Pin=lW, f= 175MHz 3.00 3.00 Vc b =25V, I e =0 Ve b =3V, Ic=0 Vc e =10V, lc=0. 2A Vcc=12. 5V. Po=30M B ^ Po ÍC[pJ!j Vcc=12. 5V,Pin=3.5W, f= 175MHz , =12. 5V, Pin=10W. f= 175MHz 0.10 Vc b =15V, I e = 0 Vc b =5V, I c =1A 25.00 Vc b =10V, I e =0, MMHz Vcc


OCR Scan
PDF 2SC2628 150MHz) 175MHz 30tfo 175MHz) 2SC2629 2SC2630 2SC2638 2SC2639
2006 - RD02MUS1

Abstract: T112 transistor marking zg RD02MVS1
Text: PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz ,520MHz,2W RD02MUS1 is a MOS FET type , 1.0+/-0.05 High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f= 175MHz ,520MHz High Efficiency:65%typ.( 175MHz ) High Efficiency:65%typ.(520MHz) 0.9+/-0.1 FEATURES 4.9+/-0.15 1 MITSUBISHI RF , Compliance,Silicon MOSFET Power Transistor 175MHz ,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS , =12V, IDS=1mA VDD=7.2V, Pin=50mW, f= 175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po


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PDF RD02MUS1 175MHz 520MHz RD02MUS1 RD02MUS1-101 T112 transistor marking zg RD02MVS1
2004 - a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Text: PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz , 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6 , , Gp>12dB@Vdd=7.2V,f= 175MHz ·High Efficiency: 57%typ. ( 175MHz ) 2 3.5+/-0.05 FEATURES 1.0 , VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f= 175MHz ,VDD=7.2V Pin=1.0W,Idq=1.0A VDD=9.2V,Po=12W(Pin Control) f= 175MHz ,Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) Load VSWR tolerance LIMITS MIN , RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz , 12W TYPICAL


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PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758
2004 - RD02MUS1

Abstract: transistor rf m 1104 mosfet 840 datasheet
Text: PRECAUTIONS Silicon MOSFET Power Transistor 175MHz ,520MHz,2W OUTLINE DRAWING RD02MUS1 is a MOS FET type , : Pout>2W, Gp>16dB @Vdd=7.2V,f= 175MHz ,520MHz ·High Efficiency:65%typ.( 175MHz ) ·High Efficiency:65 , tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=50mW, f= 175MHz Idq=200mA VDD=7.2V, Pin=50mW, f=520MHz Idq=200mA VDD=9.2V,Po=2W(PinControl) f= 175MHz ,Idq=200mA,Zg , RD02MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz ,520MHz,2W TYPICAL


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PDF RD02MUS1 175MHz 520MHz RD02MUS1 520MHz 175MHz) 520MHz) transistor rf m 1104 mosfet 840 datasheet
2011 - Not Available

Abstract: No abstract text available
Text: Transistor 175MHz ,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 , . INDEX MARK (Gate) FEATURES 0.2+/-0.05 Pout>2W, Gp>16dB @Vdd=7.2V,f= 175MHz , 520MHz •High Efficiency: 65%typ. ( 175MHz ) 0.9+/-0.1 •High power gain: (0.25) Terminal No. 1.Drain (output , ) > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz ,520MHz,2W ABSOLUTE MAXIMUM RATINGS (Tc , 3 V Output power VDD=7.2V, Pin=50mW, 2 3 - W Drain efficiency f= 175MHz


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PDF RD02MUS2 175MHz 520MHz RD02MUS2 175MHz, 520MHz 175MHz)
2004 - RD07MVS1

Abstract: ic 453 8p
Text: RD07MVS1 Silicon MOSFET Power Transistor, 175MHz ,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 , ·High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz ·High Efficiency: 60%typ. ( 175MHz ) ·High , OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f= 175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(PinControl) f= 175MHz ,Idq=700mA,Zg , Silicon MOSFET Power Transistor, 175MHz ,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT


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PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) ic 453 8p
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