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2006 - 16N80P

Abstract: 26N60P PLUS220SMD siemens
Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A RDS(on) 600 m trr 250 ns IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode , power density DS99599E(07/06) IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Symbol Test , IXFV 16N80P IXFV 16N80PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output , 16N80P IXFV 16N80P IXFV 16N80PS Fig. 8. Transconductance Fig. 7. Input Admittance 28 20 18


Original
PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS 16N80P PLUS220SMD siemens
2006 - Not Available

Abstract: No abstract text available
Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS(on) ≤ 600 mΩ trr ≤ 250 ns IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode , IXFT 16N80P IXFV 16N80P IXFV 16N80PS Symbol Test Conditions Characteristic Values (TJ = 25 , ,478 B2 7,071,537 IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Fig. 1. Output Characteristics , Centigrade I - Amperes D IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Fig. 8. Transconductance


Original
PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS
2008 - 7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: IXFV 16N80PS IXFV 18N60P IXFV 18N60PS IXFV 20N80P IXFV 20N80PS IXFV 22N50P IXFV 22N50PS IXFV


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PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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