The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TMS416100-80DZ Texas Instruments 16MX1 FAST PAGE DRAM, 80ns, PDSO24
TMS416100-10DZ Texas Instruments 16MX1 FAST PAGE DRAM, 100ns, PDSO24
TMS416100-70DZ Texas Instruments 16MX1 FAST PAGE DRAM, 70ns, PDSO24
TMS416100P-60DGA Texas Instruments 16MX1 FAST PAGE DRAM, 60ns, PDSO24, PLASTIC, TSOP-26/24
TMS416100-70DGA Texas Instruments 16MX1 FAST PAGE DRAM, 70ns, PDSO24, PLASTIC, TSOP-26/24
TMS416100-60DGA Texas Instruments 16MX1 FAST PAGE DRAM, 60ns, PDSO24, PLASTIC, TSOP-26/24
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Search Stock (19)

  You can filter table by choosing multiple options from dropdownShowing 19 results of 19
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
E2EM-X16MX1 2M OMRON Corporation Avnet - $135.19 $109.29
E2EM-X16MX1 2M OMRON Industrial Automation Newark element14 8 $153.66 $109.98
E2EM-X16MX1 2M OMRON Industrial Automation Heilind Electronics - - -
E2EM-X16MX1 2M OMRON Industrial Automation Heilind Electronics - Asia - - -
E2EM-X16MX12M OMRON Industrial Automation Sager - $116.42 $105.34
E2EMX16MX12M OMRON Industrial Automation Allied Electronics & Automation - $148.22 $148.22
GT1-ID16MX-1 OMRON Corporation Avnet - $690.39 $558.39
GT1-ID16MX-1 OMRON Industrial Automation Sager - $617.40 $558.60
GT1-ID16MX-1 OMRON Industrial Automation Heilind Electronics - - -
GT1-ID16MX-1 OMRON Industrial Automation Heilind Electronics - Asia - - -
GT1-OD16MX-1 OMRON Industrial Automation Heilind Electronics - Asia - - -
GT1-OD16MX-1 OMRON Industrial Automation Sager - $632.10 $571.90
GT1-OD16MX-1 OMRON Corporation Avnet - $706.29 $571.19
GT1-OD16MX-1 OMRON Industrial Automation Heilind Electronics - - -
NAS516MX1 NAS Miscellaneous Bisco Industries 6 - -
PT16MX16F Switchcraft Conxall Farnell element14 2 £379.00 £327.00
PT16MX16F Switchcraft Conxall element14 Asia-Pacific 2 $633.87 $515.69
PT16MX16F Switchcraft Conxall Newark element14 2 $427.70 $352.50
PT16MX16F Switchcraft Conxall Sager - $375.35 $342.09

No Results Found

16MX1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - Not Available

Abstract: No abstract text available
Text: PcRam Description TS16M3660G Dimensions The TS16M3660G is a 16M by 36-bit dynamic RAM module with 8 pcs of 16Mx4 and 4pcs of 16Mx1 Side Millimeters Inches DRAMs assembled on the printed circuit board. A 107.95 ± 0.200 4.250 ± 0.008 The TS16M3660G is optimized for , DQ0~DQ35 /RAS2 A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS3 A0~A11 D0 /RAS 16Mx1 DRAM /WE A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS /CAS A0~A11 D0 /RAS 16Mx1 DRAM /WE /CAS2 /CAS


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PDF TS16M3660G TS16M3660G 36-bit 16Mx4 16Mx1 16Mx4
1996 - FPM DRAM 30-pin SIMM

Abstract: 9715 SMART Modular Technologies 30 pin simm 16MX1 16MX1-DRAM
Text: SMART ® SM5091610U4PUUU Modular Technologies November 21, 1996 16MByte (16M x 9) DRAM Module - 16Mx1 based 30-pin SIMM Part Numbers Features · · · · · · · · · · Standard Configuration Access Time Operation Mode Operating Voltage Refresh Device Physicals Lead , Diagram RAS# CAS# WE# A0~A11 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM 16Mx1 DRAM PCAS# DQ0 DQ1 DQ2 DQ3


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PDF SM5091610U4PUUU 16MByte 16Mx1 30-pin SM509161004PUUU SM509161014PUUU 60/70/80ns 300mil 16Mx1 FPM DRAM 30-pin SIMM 9715 SMART Modular Technologies 30 pin simm 16MX1-DRAM
1MX16BIT

Abstract: 16MX1
Text: 0 A . 16Mx1-bit , 5V, FP, 4K H Y 5 1 V 1 6 1 , . 16Mx1-bit , 5V. FP. 4K H Y 5 1 V 1 6 1 0 0 B . 16Mx1-bit . 5V, FP, 4K H Y5117400A / H Y 5 1 1 6 4 0 0 A . 4M x4-bit, 5V, FP, 2K


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PDF 256Kx4-bit, 1MX16BIT 16MX1
Not Available

Abstract: No abstract text available
Text: MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh The HYM 5361600A M-Series is a 16Mx36-bit Fast , A S Y N C D R A M M O D U LE D A TA B O O K 16MX36 bit FP DRAM MODULE based on 16Mx1 DRAM, with , 16MX36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, SV, 4K-Refresh ABSOLUTE MAXIMUM RATINGS , FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh AC CHARACTERISTICS (T a =0°C to , YM 5361600A M- Series 16Mx36 bit FP ORAM MODULE based on 16Mx1 ORAM, with Parity, 5V, 4K


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PDF HYM5361600A 16Mx36 16Mx1 361600A 16Mx36-bit HY5116100B HYM5361600AM/ATM HYM5361600AMG/ATMG 72-Pin 256ms
Not Available

Abstract: No abstract text available
Text: ( -H Y U N D A I ) HYM5321600A M-Series 16MX32 bit FP DRAM MODULE based on 16Mx1 DRAM, SV , based on 16Mx1 DRAM, 5V, 4K-Refresh PIN ASSIGNMENTS # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 , 16Mx1 DRAM, 5V, 4K-Refresh ABSOLUTE MAXIMUM RATINGS SYMBOL TA TSTG VIN, VOUT VCC IOS PD PARAMETER , A M M O D U LE DATA BO O K 16Mx32 bit FP ORAM MODULE based on 16Mx1 DRAM, SV, 4K-Refresh AC , MODULE DATA BOOK H Y M 5321600 A M -Series 16Mx32 bit FP DRAM MODULE based on 16Mx1 DRAM, 5V, 4K


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PDF HYM5321600A 16MX32 16Mx1 16Mx32-bit HY5116100B HYM5321600AM/ATM HYM5321600AMG/ATMG 72-Pin 256ms
2002 - Not Available

Abstract: No abstract text available
Text: 64MB 72 PIN FPM DRAM SIMM With 16Mx4+16Mx1 5VOLT TS16M3660N  Dimensions Description The TS16M3660N is a 16M by 36-bit dynamic RAM module with 8 pcs of 16Mx4 and 4pcs of 16Mx1 Side Millimeters DRAMs assembled on the printed circuit board. A 107.95 ± 0.400 The TS16M3660N is , A0~A11 D0 16Mx1 /RAS DRAM /WE /CAS3 A0~A11 D0 16Mx1 /RAS DRAM /WE A0~A11 D0 16Mx1 /RAS DRAM /WE /CAS /CAS A0~A11 D0 16Mx1 /RAS DRAM /WE /CAS2 /CAS /CAS1


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PDF 16Mx4 16Mx1 TS16M3660N TS16M3660N 36-bit 16Mx1
Not Available

Abstract: No abstract text available
Text: DRAM MODULE KMM53632000BK/BKG KMM53632000BK/BKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 , 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632000B consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1 bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 , 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : KMM53632000BK/BKG - KM44C16100BK KM41C16000CK


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PDF KMM53632000BK/BKG KMM53632000BK/BKG 16Mx4 16Mx1, KMM53632000B 32Mx36bits 16Mx4bits 16Mx1 72-pin
km416c254

Abstract: No abstract text available
Text: MEMORY ICs FUNCTION GUIDE D ensity' P o w er KM416C256B# KM416C256BL# KM416C254S# KM416C254BL# 3.3V±0.3V KM416V256B# KM416V25SBL# KM416V254B# KM416V254BL# EDO 60/70/80 Fast Page EDO 50/60/70 Fast Page J:40 Pin SOJ T:40 Pin TSOP-ll(Forward) 4M B/W 256KX16 5V±10% 16M bit 16Mx1 5V±10% KM41C16000B# KM41C16000B#-L 50/60/70 Fast Page(4K) K:24 Pin SOJ (300mil) S:24 Pin TSOP-ll(Forward) 3.3V±0.3V KM41V16000B# KM 41V 16000B#-L 4Mx4 5V±10% KM44C4000B# KM44C4000B#-L KM44C4100B# KM44C4100B#-L


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PDF KM416C256B# KM416C256BL# KM416C254S# KM416C254BL# KM416V256B# KM416V25SBL# KM416V254B# KM416V254BL# 256KX16 16Mx1 km416c254
604f

Abstract: 1604f 5V72A3204
Text: .2 0 7 4M x4 B 1 7 16Mx1 B a s e d .- 2 2 7 16Mx1 B a s e d


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PDF 72Pin 32224A 2Mx32 532224C ------------2Mx32 53241Q 532410C 4Mx32 604f 1604f 5V72A3204
k i a 431 a 515

Abstract: 416C 4103B
Text: 100 4B , K M 41 6C 120 4B K M 416V 1004B , K M 4 1 6V 1 20 4B . . 16Mx1 16Mx1 4M x4, 5V


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PDF 1000D 128KX8, k i a 431 a 515 416C 4103B
1996 - Not Available

Abstract: No abstract text available
Text: utilizes seventy-two CMOS (TSOP package), 16Mx1 dynamic RAMs and four buffers on two epoxy laminate , devices. 2. WE# through buffer to all devices. 3. Each 16Mx9 Block comprises of nine 16Mx1 DRAMs. VCC


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PDF SM53632100UP5UU SM53632100UP5UU 128MByte 128-megabyte 72-pin, SM536321002P5UU SM536321004P5UU 16Mx1
64 mega bit ram simm

Abstract: No abstract text available
Text: DRAM MODULE KMM5816000AK Fast Page Mode 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KM M 5816000AK is a 16M bit x 8 D ynam ic RAM high density m em ory module. The Sam sung KM M 5816000AK consists of eight CMOS 16Mx1 bit DRAMs in 24-pin SOJ packages mounted on a 3 0 -pin g la s s -e p o x y su b s tra te . A 0.2 2uF decoupling capacitor is , device is 16Mx1 DRAM , SOJ DRAM Part No. KM41C16000AK (300 mil) Revision History RevO.O : 22 Dec 93


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PDF KMM5816000AK 16Mx8 5816000AK 16Mx1 24-pin 816000A KMM5016OOOAK KMM5016QOOAK 64 mega bit ram simm
1999 - Not Available

Abstract: No abstract text available
Text: DRAM MODULE M53613201CE0/CJ0-C 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , M53613201CE0/CJ0-C Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 , 4K Refresh, 5V GENERAL DESCRIPTION , Samsung M53613201CE0/CJ0-C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ , NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : M53613201CE0/CJ0 - K4F640411C


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PDF M53613201CE0/CJ0-C 32Mx36 16Mx4 16Mx1 M53613201CE0/CJ0-C 16Mx1,
1999 - Not Available

Abstract: No abstract text available
Text: DRAM MODULE M53631601CE0/CJ0-C 4Byte 16Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM , M53631601CE0/CJ0-C EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 , 4K Refresh, 5V GENERAL DESCRIPTION , Samsung M53631601CE0/CJ0-C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ , ) Tolerances :±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ


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PDF M53631601CE0/CJ0-C 16Mx36 16Mx4 16Mx1 M53631601CE0/CJ0-C 16Mx1,
DRAM 64kx16

Abstract: dram zip 256kx16
Text: Changed Point in '96 DRAM Databook (Compared with '95 databook) Changed Point in '96 DRAM databook - Remove TSOP ll(reverse) package General - Remove 80ns version in 5V product - Remove SC Mode, WPB Mode product - Remove 512Kx9 and 256Kx18 product Remarks Device - 128Kx8, 64Kx16 - 4M x1, 1 Mx4 - 512Kx8. 256Kx16 Generation Change - 16Mx1 , 4Mx4, 2Mx8 - 1Mx16 - 16Mx4, 8Mx8 - 4Mx16 1M in '95 - None - C-version - B-version - A-version - A-version -1st gen. - None in '96 - 1st gen. -


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PDF 512Kx9 256Kx18 128Kx8, 64Kx16 512Kx8. 256Kx16 16Mx1, 1Mx16 16Mx4, 4Mx16 DRAM 64kx16 dram zip 256kx16
1999 - KMM53616000CK

Abstract: KMM53616000CKG
Text: DRAM MODULE KMM53616000CK/CKG 4Byte 16Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM , KMM53616000CK/CKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 , 4K Refresh, 5V GENERAL DESCRIPTION , KMM53616000C consists of eight CMOS 16Mx4bits DRAMs and four CMOS 16Mx1bit DRAMs in SOJ packages mounted on a , device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : KMM53616000CK/CKG - KM44C16100CK KM41C16000CK


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PDF KMM53616000CK/CKG 16Mx36 16Mx4 16Mx1 KMM53616000CK/CKG 16Mx1, KMM53616000C KMM53616000CK KMM53616000CKG
1999 - KMM53632004CK

Abstract: KMM53632004CKG
Text: DRAM MODULE KMM53632004CK/CKG 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , KMM53632004CK/CKG EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION , KMM53632004C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72 , ) Tolerances : ±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ


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PDF KMM53632004CK/CKG 32Mx36 16Mx4 16Mx1 KMM53632004CK/CKG KMM53632004C KMM53632004CK KMM53632004CKG
1999 - Not Available

Abstract: No abstract text available
Text: DRAM MODULE M53613201BE0/BJ0-C 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.1 June 1998 DRAM MODULE M53613201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) · Removed two , SIMM Using 16Mx4 & 16Mx1 , 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53613201BE0 , of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72 , NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : M53613201BE0/BJ0 - K4F640411B


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PDF M53613201BE0/BJ0-C 32Mx36 16Mx4 16Mx1 M53613201BE0/BJ0-C 16Mx1,
1999 - KMM53632000CK

Abstract: KMM53632000CKG
Text: DRAM MODULE KMM53632000CK/CKG 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , KMM53632000CK/CKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 , 4K Refresh, 5V GENERAL DESCRIPTION , KMM53632000C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72 , : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ DRAM Part No. : KMM53632000CK/CKG - KM44C16100CK


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PDF KMM53632000CK/CKG 32Mx36 16Mx4 16Mx1 KMM53632000CK/CKG 16Mx1, KMM53632000C KMM53632000CK KMM53632000CKG
1999 - Not Available

Abstract: No abstract text available
Text: DRAM MODULE M53633201CE0/CJ0-C 4Byte 32Mx36 SIMM (16Mx4 & 16Mx1 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb , M53633201CE0/CJ0-C EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION , Samsung M53633201CE0/CJ0-C consists of sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ , ) Tolerances : ±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ


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PDF M53633201CE0/CJ0-C 32Mx36 16Mx4 16Mx1 M53633201CE0/CJ0-C
4MB DRAM

Abstract: 4MX16 1MX16
Text: . 16Mx1 , 5V/3.3V, FP . 121 129 129 137 145 153 161 169 177 185 193 201


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PDF KM41C4000D/KM41V4000D. KM44C1000D/KM44V1000D. KM44C1003D -KM44C1004D/KM44V1004D. KM44C1005D -KM48C512D/KM48V512D. KM48C512D 4MB DRAM 4MX16 1MX16
514400

Abstract: 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
Text: BJ P-TSOP-26/20-1 HYB 514100 BT HYB 514400 BT 16M 16Mx1 4Mx4 2 Mx8 P-SOJ-26/24-1 HYB 5116100


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PDF P-SOJ-26/20-11 P-SOJ-26/20-52' P-SOJ-28-2 P-SOJ-40-1 P-TSOPII-26/20-1 P-SOJ-28/24-1 5116400J 5117400ASJ 5116400ASJ 5116400AJ 514400 511000 dram ON SEMICONDUCTOR 241 bt 2411 514256 511000
M5M417405CJ

Abstract: M5M417800 M5M418165CTP-5 MSM417805CJ-7 M5M417800CTP-7 M5M417405CTP-5 M5M417405CJ5 M5M418160CJ-7 M5M417800CTP m5m416100cj
Text: MEMORIES 16M-Bit DYNAMIC RAMs A . . , . · Memory [ Memory capacityj Configuration Function mode _ L . . Fast Page 16Mx1 4K Refresh Cycle Self Refresh (- * Si M ix. access time (ns) 50 60 70 50 Typ. power ImWi 495 405 340 495 405 340 495 405 340 655 540 475 655 540 475 655 540 475 655 540 475 540 430 385 810 675 585 540 430 385 810 675 585 Type No. , Patclaa.e O uTO M5M4t6t00CJ-5,5S MSM416100CTP-5.5S M5M416100CJ-6.6S M5M416100CTP-6.6S M5M416I00CJ-7.7S M5M416I00CTP-7.7S M 5M


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PDF 16M-Bit 16Mx1 M5M4t6t00CJ-5 MSM416100CTP-5 M5M416100CJ-6 M5M416100CTP-6 M5M416I00CJ-7 M5M416I00CTP-7 416400CJ-5 M5M416400CTP-5 M5M417405CJ M5M417800 M5M418165CTP-5 MSM417805CJ-7 M5M417800CTP-7 M5M417405CTP-5 M5M417405CJ5 M5M418160CJ-7 M5M417800CTP m5m416100cj
KM44C4105C-6

Abstract: KM44C16004
Text: -7 KM416V256D-L6 f- KM416V256D-L7 KM416V2S4D-6J- KM416V254D-7 KM416V254D-L6 KM416V254D-L7 16M btt 16Mx1


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PDF KM41C4000D-5 KM41C4000D-6 KM41C4000D-7 KM41C4000D-L5 KM41C4000D-L6 KM41V4000D-6 KM41V4000D-L6 KM41C4000D-L7 KM41V4000D-7 KM41V4000D-L7 KM44C4105C-6 KM44C16004
1999 - Not Available

Abstract: No abstract text available
Text: DRAM MODULE M53633201BE0/BJ0-C 4Byte 32Mx36 SIMM PDpin(16Mx4 & 16Mx1 base) Revision 0.1 June 1998 DRAM MODULE M53633201BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) · , Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53633201BE0/BJ0-C is , sixteen CMOS 16Mx4bits and eight CMOS 16Mx1bit DRAMs in SOJ packages mounted on a 72-pin glass-epoxy , ) Tolerances : ±.005(.13) unless otherwise specified NOTE : The used device is 16Mx4 DRAM & 16Mx1 DRAM, SOJ


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PDF M53633201BE0/BJ0-C 32Mx36 16Mx4 16Mx1 M53633201BE0/BJ0-C
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