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LTC1696ES6#TR Linear Technology LTC1696 - Overvoltage Protection Controller; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC1696ES6#TRM Linear Technology LTC1696 - Overvoltage Protection Controller; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC1696ES6#TRPBF Linear Technology LTC1696 - Overvoltage Protection Controller; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC1696ES6#PBF Linear Technology LTC1696 - Overvoltage Protection Controller; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC1696ES6#TRMPBF Linear Technology LTC1696 - Overvoltage Protection Controller; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
LTC1696ES6 Linear Technology LTC1696 - Overvoltage Protection Controller; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C
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1696-GP-10 Marathon Special Products Master Electronics 28 $29.75 $14.00

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Catalog Datasheet MFG & Type PDF Document Tags
kulka 1690 series

Abstract: series 21 terminal blocks 1694GP04 1695 GP 1 kulka 1699 1696 GP 06 dc 1692 kulka SCR FLAT HD KT-47
Text: Single Row Terminal Blocks Kulka® 1690 GP Series 300 Volts AC/DC (Class B) 150 Volts AC/DC , Top to bottom: 1694 GP 04 PSB, 1691 GP 06 PSB RoHS Compliant 1691 GP 1692 GP 1693 GP # of poles 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 TERMINAL BLOCK SERIES 1694 GP 1697 GP 1695 GP 1698 GP 1696 GP 1699 GP Dimensions A B 0.34 , Include "PSB" after part # when ordering (169X GP XX PSB) See page 100 for 1690 Series Terminal block


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PDF 150oC E47811 LR19766 kulka 1690 series series 21 terminal blocks 1694GP04 1695 GP 1 kulka 1699 1696 GP 06 dc 1692 kulka SCR FLAT HD KT-47
Not Available

Abstract: No abstract text available
Text: system C « 1 +` 24 VDC nominal unless otherwise noted) Symbol BW GP - NF Phil! - - IP:t lPa HP2 Id C , +48.0 50 5-500 9.0 ± 1.0 5.0 + 13.0 2.0:1 2.0:1 - - - - 5-500 8.5 ± 1.0 0.0 + 13.0 2.0:1 2.0:1 - - , -.28 .46 1.12 16.96 -.19 .45 1.14 16.98 -.30 .45 1.15 17.01 -. 10 .44 1.16 17.02 .16 .44 1.17 17.06 .27


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PDF 24-Volt Max19
Not Available

Abstract: No abstract text available
Text: nominal unless otherwise noted) BW GP — NF PldB — — IP3 IP2 HP2 Id Guaranteed , ± 1.0 5.0 +13.0 2.0:1 2.0:1 5-500 10.0 ±0.5 4.5 +15 <1.5:1 <1.5:1 +29.0 +42.0 +48.0 , Performance Over Temperature MHz dB dB dB dBm 5-500 8.5 ± 1.0 6.0 +13.0 2.0:1 2.0:1 — â , 400 Frequency, MHz 1.5 1.0 I— 100 200 300 Frequency, MHz Second-Order , -.30 -. 10 .16 .27 — — — — — — GROUP DELAY ns _ .45 .47 .46 .45 .45


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PDF 24-Volt 4447SA4
1996 - Not Available

Abstract: No abstract text available
Text: unless otherwise noted) Symbol BW GP - NF P 1dB - - IP3 IP2 HP2 ID Characteristic Frequency Range , 1.0 5.0 +13.0 2.0:1 2.0:1 - - - - 5-500 8.5 ± 1.0 6.0 +13.0 2.0:1 2.0:1 - - - - Unit MHz dB dB , 500 1.0 100 200 300 Frequency, MHz 400 500 1.0 100 200 300 Frequency, MHz , 114.64 106.81 98.81 90.45 82.09 72.90 63.04 52.30 40.09 .08 .26 .09 ­.28 ­.19 ­.30 ­. 10 .16 .27 - -


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PDF 24-Volt
2003 - MGF0920A

Abstract: IM335 pt 11400
Text: , Gp ,PAE vs.Pi 70 Vds=10V Id(off)=400mA f=1.9GHz 30 60 Po Po(dBm) 25 50 PAE 20 40 15 30 Gp 10 20 5 10 0 Gp (dB),PAE(%) 35 0 - 10 -5 0 5 10 15 20 Pin(dBm) Pi(SCL) vs.Po(SCL),IM3 35 30 25 20 15 10 5 0 -5 - 10 30 , . FEATURES · High output power Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm · High power gain Gp =18dB(TYP , =3V,VGS=0V VGS(off) Gate to source cut-off voltage VDS=3V,ID=3.0mA - 1.0 - -5.0 V


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PDF MGF0920A MGF0920A 32dBm 15dBm 400mA 50pcs) t-155 IM335 pt 11400
1995 - Not Available

Abstract: No abstract text available
Text: noted) Symbol BW GP — NF P1dB — — IP3 IP2 HP2 ID Typical Guaranteed Specifications TC = 25°C TC = 0 to 50°C TC = –55 to +85°C Characteristic 5-500 9.0 ± 1.0 5.0 +13.0 , dB dB dBm — — dBm dBm dBm mA 5-500 8.5 ± 1.0 6.0 +13.0 2.0:1 2.0:1 — — â , 100 200 300 400 500 1.5 1.25 1.0 100 200 Frequency, MHz 300 400 1.0 , 82.09 72.90 63.04 52.30 40.09 .08 .26 .09 –.28 –.19 –.30 –. 10 .16 .27 — â


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PDF 500MHz 24-Volt 5963-2559E
1996 - Not Available

Abstract: No abstract text available
Text: GP — NF P 1dB — — IP3 IP2 HP2 ID Typical Guaranteed Specifications TC = 25°C TC , Intercept Point DC Current 5-500 9.0 ± 1.0 5.0 +13.0 2.0:1 2.0:1 — — — — 5-500 , €” dBm dBm dBm mA 5-500 8.5 ± 1.0 6.0 +13.0 2.0:1 2.0:1 — — — — Typical , 400 500 1.5 1.25 1.0 100 200 Frequency, MHz 300 400 1.0 100 500 , 40.09 .08 .26 .09 –.28 –.19 –.30 –. 10 .16 .27 — — — — — — GROUP


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PDF 24-Volt
UTC 1098

Abstract: re200
Text: ELECTRICAL SPECIFICATIONS Sym bol BW GP - (Measured in a 50-ohm system @ +24 VD C nominal unless otherwise noted) Typical Tc = 25°C G u aran teed S p ecification s Tc = 0° to 50°C 5-500 9.0 ± 1.0 5.0 +13.0 , Intercept Point DC Current Unit M Hz dB dB dB dBm - - Tc - 55° to +85°C 5-500 8.5 ± 1.0 6.0 +13.0 , ASE DEV .08 .26 .09 -.28 -.19 -.30 -. 10 .16 .27 - - - - - GPDEL ns VSW R OUT 1.09 1.10


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PDF 24-Volt 50-ohm UTC 1098 re200
cr 6848

Abstract: No abstract text available
Text: CORPORATION. GP 00 G REVISED PER ECO -09-002944 19M AR 2009 CR SB B ±0.38 [±.015 , COPPER. DATUMS S & T TO BE ESTABLISHED BY CUSTOMER. NO KEYING SLOT ON THIS END EOR 6, 8, 10 , 12 & 14 POSITION ASSEMBLIES. NO KEYING SLOT ON THIS END EOR 6, 8 & 10 POSITION ASSEMBLIES. NO STANDOFF FOR 6, 8, 10 , 2.300] 50.80 2 11 9 7 20 16 14 12 10 POST 00.79 MAX [0.031] 2.59± 0.38 [.1 02±.01 5] 0O.38 , O O O O O O O O ^ POS #1 REF 0O.89±O.O8 [0.O35±.OO3] 20 16 14 10 NO OF POS o o o o o o o ^


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PDF UL94V-0, 76jum[ 54jum 27jum[ cr 6848
Not Available

Abstract: No abstract text available
Text: RECO ENDED PC BOARD LAYOUT EWED EROM CONNECTOR SIDE) 4805 (3/11) 2 LOC GP DIST 00 REVISIONS , . ano keying slot on this end for 6, 8, 10 , 12 & 14 position assemblies. Ano keying slot on this end eor 6, 8 & 10 position assemblies. ano standole lor 6, 8, 10 , 12, 14 & 16 position assemblies. A , 50 40 36 34 30 26 24 20 1 6 14 12 10 6 60 50 40 34 30 26 24 20 1 6 14 10 NO


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PDF
Not Available

Abstract: No abstract text available
Text: ELECTRONICS CORPORATION. GP 00 F REVISED PER E C O - 08- 014877 19JU N 08 JDP SLB B , OVER COPPER. DATUMS S & T TO BE ESTABLISHED BY CUSTOMER. NO KEYING SLOT ON THIS END EOR 6, 8, 10 , 12 & 14 POSITION ASSEMBLIES. NO KEYING SLOT ON THIS END EOR 6, 8 & 10 POSITION ASSEMBLIES. NO STANDOFF FOR 6, 8, 10 , 12, 14 & 1 6 POSITION ASSEMBLIES. /2S. D SPACES D -Y- 9.19 [.362] I 0 0 , ] 15.24 [.600] 83.82 3.300] 71.12 2.800] 58.42 2.300] 50.80 2 11 9 7 6 5 4 3 20 16 14 12 10


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PDF UL94V-0, 76jum[ 54jum 27jum[
Not Available

Abstract: No abstract text available
Text: ELECTRONICS CORPORATION. 7 LOC DIST LTR n REVISIONS DESCRIPTION DATE DW N APVD GP 00 REVISED , THIS END FOR 6, 8, 10 , 12 & 14 POSITION ASSEMBLIES. NO KEYING SLOT ON THIS END FOR 6, 8 & 10 POSITION ASSEMBLIES. NO STANDOFF FOR 6, 8, 10 , 12, 14 & 16 POSITION ASSEMBLIES. -X- Jk -Y- D A 9.19 , 40 36 34 30 26 24 20 16 14 12 10 3- 1761607- 7 3- 1761607- 6 3- 1761607- 5 3- 1761607- 3 3 , 50 40 34 30 26 24 20 16 14 10 - 1761606- 6 - 1761606- 5 - 1761606- 3 -1761606-1 - 1761606- 0


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PDF 19APR05 UL94V-0, 03MAR05 03MAR05 31MAR2000
Not Available

Abstract: No abstract text available
Text: 7 6 2 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT - By - ALL RIGHTS RESERVED. LOC GP DIST 00 REVISIONS p LTR DESCRIPTION DATE DWN APVD F1 REVISED PER ECO , by customer m no keying slot on this end eor 6, 8, 10 & 14 position assemblies ano keying slot on this end eor 6, 8 & 10 position assemblies Ano standoef for e, 10 , u & is position assemblies ZZa , 26 24 20 1 6 14 10 6 60 50 40 34 30 26 24 20 1 6 14 10 NO OF POS 3-1761608-7


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PDF UL94V-0, 76jum[ 54jum[ 27jum[
Not Available

Abstract: No abstract text available
Text: = -55 to +85°C 5-1000 5-1000 5-1000 BW Frequency Range 10.0 9.0 11.0 GP Small Signal Gain (Min.) ± 1.0 ± 1.0 ' Gain Flatness (Max.) ±0.5 6.5 7.0 5.5 NF Noise Figure (Max.) + 14.0 , Key: +25°C +85°C-*55°C 12 S 11 3 10 400 600 Frequency, MHz , 1.25 400 600 1.0 800 400 600 Frequency, MHz Frequency, MHz E o oT x E


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PDF either071
cr 6848

Abstract: No abstract text available
Text: 4 3 LOC 2 D IS T BY TYCO ELECTRONICS CORPORATION. GP 00 R E VIS IO N S LTR , OVER COPPER. DATUMS S & T TO BE ESTABLISHED BY CUSTOMER. NO KEYING SLOT ON THIS END FOR 6, 8, 10 & 14 POSITION ASSEMBLIES. NO KEYING SLOT ON THIS END FOR 6, 8 & 10 POSITION ASSEMBLIES. NO STANDOFF FOR 6, 10 , ] 22.86 [.900] 17.78 [.700] 15.24 [.600] 10.1 6 [.400] OBSOLETE 7.62 [.300] 20 16 14 10 [ . [ . , DOCUMENT. 20 16 14 10 NO OF POS o o o o o o o ^ . . ] ] 6 4 D DWN 25.40 1 000 20.32


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PDF UL94V-0, 76jum[ 54jum 27jum[ 76juin[ 31MAR2000 cr 6848
bc 5578

Abstract: 1761608-3
Text: CORPORATION. GP 00 B REVISED PER EC O -07- 000385 08JAN07 JDP SLB :0.58 :. 0 15 ~ C D , : BLACK CHROMATE. DATUMS S & T TO BE ESTABLISHED BY CUSTOMER. NO KEYING SLOT ON THIS END FOR 6, 8, 10 & 14 POSITION ASSEMBLIES. NO KEYING SLOT ON THIS END FOR 6, 8 & 10 POSITION ASSEMBLIES. NO STANDOFF FOR 6, 10 , ] 58.42 [2.300] 64 60 50 44 40 36 34 30 26 24 20 16 14 10 3-1761608-7 3-1761608-6 3-1761608-5 , 40 34 30 26 24 20 16 14 10 NO OF POS 2-1761608-1 -1761608-6 -1761608-5 -1761608-3 -1761608-1 -1 7


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PDF 08JAN07 UL94V-0, 31MAR2000 bc 5578 1761608-3
1761606-7

Abstract: No abstract text available
Text: . GP 00 C REVISED PER EC O -06- 024235 31 J A N 0 7 BM SB ±0.38 [±.015] C 2.54 [.1 00 , . DATUMS S & T TO BE ESTABLISHED BY CUSTOMER. NO KEYING SLOT ON THIS END FOR 6, 8, 10 , 12 & 14 POSITION ASSEMBLIES. NO KEYING SLOT ON THIS END EOR 6, 8 & 10 POSITION ASSEMBLIES. NO STANDOFF FOR 6, 8, 10 , 12, 14 & , [1.000] 20.32 [.800] A 64 60 50 40 36 34 30 26 24 20 16 14 12 10 8 6 60 50 40 34 30 26 24 20 16 14 10


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PDF UL94V-0, 31MAR2000 1761606-7
um 1082

Abstract: MIL-HDBK-217-E
Text: i l system @ +15 VDC nominal unless otherw ise noted) Symbol BW GP - C haracteristic Frequency , +46.0 48 5-1000 10.0 ± 1.0 6.5 + 14.0 2.0:1 2.0:1 - - - - 5-1000 9.0 ± 1.0 7.0 + 13.0 2.0:1 2.0:1 -


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PDF
2005 - MP4TD0400

Abstract: Gain Block angle vice
Text: Typical Gain @ 1.0 GHz · Unconditionally Stable (k>1) 375 µ (14.8 mil) Description M-Pulse , amplifiers in industrial and military applications. The MP4TD0400 is fabricated using a 10 GHz f T silicon , reliability. TYPICAL POWER GAIN vs FREQUENCY 10 Ground Optional RF Output & +5.25 Volts 375 µ (14.8 , Type of Carrier GEL PACK Waffle Pack Tape Frame Ga in Fla t t o DC 0 0.1 1 10 Fre que , Conditions Gp Power Gain (S212) f = 0.1 GHz Gain Flatness f = 0.1 to 2.0 GHz Gp f 3 dB 3 dB Bandwidth


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PDF MP4TD0400 MP4TD0400 Gain Block angle vice
1996 - Not Available

Abstract: No abstract text available
Text: 9.0 dB Typical Gain @ 1.0 GHz Unconditionally Stable (k>1) Hermetic Gold-Ceramic Microstrip Package , IF and RF amplifiers in industrial and military applications. The MA4TD0470 is fabricated using a 10 , performance and reliability. TYPICAL POWER GAIN VS FREQUENCY 10 9 8 7 6 5 4 3 2 1 0 0.1 2 GND .035 0,89 .004 ±.002 0, 1±0 ,05 .070 1,78 .495 ±.030 12,57±0,76 Notes: (unless otherwise specified , ) Ordering Information Gain Flat to DC 1 10 FREQUENCY (GHz) Model No. MA4TD0470 PIN MA4TD0470 TR


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PDF MA4TD0470 MA4TD0470 16dBm)
GRM2162C

Abstract: 30t60 RD00HVS1 GRM216R11H223KA01E GRM2162C1H680GD01E GRM2162C1H5R0CD01E GRM2162C1H4R0CD01E GRM2162C1H150GD01E GRM2162C1H110GD01E GRM2162C1H100FD01E
Text: =7.2V) 40 80 Po Gp 70 30 t 60 25 50 20 40 15 30 10 20 5 10 0 - 10 t(%) Po (dBm) , Gp (dB) 35 0 -5 0 5 10 15 Pin (dBm) Pin Po , 40 15 30 10 20 5 10 0 - 10 0 -5 0 5 10 t(%) Po (dBm) , Gp , 80 Po Gp 70 30 t 60 25 50 20 40 15 30 10 20 5 10 0 - 10 t(%) Po (dBm) , Gp (dB) 35 0 -5 0 5 10 15 Pin (dBm) Pin Po (dBm


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PDF AN-UHF-076-A RD00HVS1 450-470MHz RD00HVS1: 450MHz 460MHz 470MHz C1H100FD01E GRM2162C1H680GD01E GRM2162C 30t60 GRM216R11H223KA01E GRM2162C1H680GD01E GRM2162C1H5R0CD01E GRM2162C1H4R0CD01E GRM2162C1H150GD01E GRM2162C1H110GD01E GRM2162C1H100FD01E
1996 - Not Available

Abstract: No abstract text available
Text: Bandwidth: DC to 3.0 GHz 9.0 dB Typical Gain @ 1.0 GHz Unconditionally Stable (k>1) Cost Effective Ceramic , MA4TD0436 are fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. TYPICAL POWER GAIN vs FREQUENCY 10 9 8 7 6 5 4 3 2 1 , Package RF Input AC/DC Ground RF Output and DC Bias 1 10 FREQUENCY (GHz) Electrical Specifications @ TA = +25°C, Id = 50 mA, Z0= 50 Symbol Gp Gp f3dB SWRin SWRout P1dB NF IP3 tD Vd dV/dT


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PDF MA4TD0435, MA4TD0436 MA4TD0436. MA4TD0435 MA4TD0436
2005 - MP4TD0470

Abstract: Gain Block MP4TD0470T
Text: Typical Gain @ 1.0 GHz · Unconditionally Stable (k>1) · Hermetic Gold-Ceramic Microstrip Package · Tape , a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. 1 3 GND 2 .070 .004 ±.002 0, 1±0 ,05 .035 1,78 , . Tolerance: in .xxx = ±.005; mm .xx = ±.13 TYPICAL POWER GAIN vs FREQUENCY 10 9 Id = 5 0 m A 8 , ) 10 Ordering Information Model No. Package MP4TD0470 Hermetic Ceramic MP4TD0470T Tape and


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PDF MP4TD0470 MP4TD0470 16dBm) amplifiers126 Gain Block MP4TD0470T
2004 - RD70HVF1

Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Text: 60 40 20 Gp 10 20 20 30 Pin(dBm) 50 30 20 0 14 10 8 20 Po , =2A 10 70 d(%) Po(dBm) , Gp (dB) , Idd(A) 50 8 d(%) 20 Idd(A) 10 2 2 0 , , Gp >10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp >7.0dB @Vdd=12.5V,f=520MHz ·High Efficiency: 60 , resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 junction to case RATINGS 30 +/-20 150 10 (Note2) 20 175 -40 to +175 1.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are


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PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
2003 - RD70HVF

Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
Text: applications. OUTLINE DRAWING 1 4-C2 FEATURES ·High power and High Gain: Pout>70W, Gp >10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp >7.0dB @Vdd=12.5V,f=520MHz ·High Efficiency: 60%typ.on VHF Band ·High , resistance CONDITIONS RATINGS 30 +/-20 150 175 -40 to +175 1.0 UNIT V V W °C °C °C/W Tc=25°C Junction , CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W TYPICAL , =+25°C Vgs=3.7V 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgs(V) Vds VS. Ciss CHARACTERISTICS 350 300


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PDF RD70HVF1 175MHz70W 520MHz RD70HVF1 175MHz 520MHz RD70HVF RD70HV vhf power transistor 50W MOSFET 2095 transistor 50w rf power transistor 520-MHz
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