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2002 - 2SK3522-01

Abstract: No abstract text available
Text: EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg *1 L= 1.67mH , Vcc=50V *2 Tch <150 , =10 V CC =300V ID=21A VGS=10V L= 1.67mH Tch=25°C IF=21A VGS=0V Tch=25°C IF=21A VGS=0V -di/dt


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PDF 2SK3522-01 2SK3522-01
2002 - 2sk3523

Abstract: No abstract text available
Text: schematic Drain(D) Gate(G) Source(S) *1 L= 1.67mH , Vcc=50V *2 Tch < = BVDSS, Tch < = 150°C = -ID, -di , =0V f=1MHz VCC=300V ID=10.5A VGS=10V RGS=10 V CC =300V ID=21A VGS=10V L= 1.67mH Tch=25°C IF=21A VGS


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PDF 2SK3523-01R 2sk3523
Not Available

Abstract: No abstract text available
Text: CUSTOMER TERMINAL RoHS Yes m o re th a n y o u e x p e c t LE AD(Pb)— FREE S n96% , Ag4% Yes IVidcam W U R T H E L E K T R O N lK ELECTRICAL SPECIFICATIONS @ 25°C unless otherwise noted: TEST CO ND ITIO NS VALUE D.C. RESISTANCE PARAMETER 1-2 ®20*C 2.77 ohms ±10% D.C. RESISTANCE 3-5 ®20*C 0.205 ohms ±10% D.C. RESISTANCE 6-9 ®20*C 0.024 ohms ±20% INDUCTANCE 1-2 10kHz, lOOmVAC, Ls 1.67mH ±10% SATURATION CURRENT 20


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PDF 10kHz, 450mA 100kHz, 4500VAC, 625VAC, 400VDC.
750811016

Abstract: No abstract text available
Text: ohms ±10% 0.205 ohms ±10% 0.024 ohms ±20% 1.67mH ±10% 450mA 18uH typ., IOOuH max. 4500VAC, 1 minute


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PDF 450mA 4500VAC, 500VAC, 860kHz 500kHz 400VDC. 750811016
2002 - 2sk3523

Abstract: MS5F5173 FUSE FUJI 2SK3523-01R
Text: 120 L= 1.67mH ,Vcc=50V Ta=25°C Tc=25°C Operating and Storage Tch 150 °C , Avalanche Capability Conditions L= 1.67mH Tch=25°C IAV See Fig.1 and Fig.2 IF=21A Diode Forward , Electric Co.,Ltd. Fig.1 Test circuit L D.U.T L= 1.67mH Vcc=50V Single Pulse Test MS5F5173


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PDF 2SK3523-01R MS5F5173 H04-004-05 H04-004-03 2sk3523 MS5F5173 FUSE FUJI 2SK3523-01R
2002 - 2SK3522-01

Abstract: No abstract text available
Text: Temperature range *1 IF-ID,-di/dt=50A/µs,VccBVDSS,Tch150°C L= 1.67mH ,Vcc=50V Ta=25°C Tc=25°C 150 , Reverse Diode Description Symbol Avalanche Capability Conditions L= 1.67mH Tch=25°C IAV , written consent of Fuji Electric Co.,Ltd. Fig.1 Test circuit L D.U.T L= 1.67mH Vcc=50V Single


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PDF 2SK3522-01 MS5F5172 H04-004-05 H04-004-03 2SK3522-01
2001 - 6940

Abstract: fast diode SOT-227 APT50M65JFLL
Text: < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.67mH , R = 25W, Peak I = 60A j G


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PDF APT50M65JFLL OT-227 6940 fast diode SOT-227 APT50M65JFLL
Not Available

Abstract: No abstract text available
Text: -750 Method 3471 4 Starting T = +25°C, L = 1.67mH , R = 25W, Peak I = 60A j G L APT Reserves the right


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PDF APT50M65JLL OT-227 othe187)
1996 - mosfet 20a 300v

Abstract: fmi20n50e
Text: ) Rth (ch-a) Note *1 : Tch150°C Note *2 : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50 E AS


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PDF FMI20N50E mosfet 20a 300v fmi20n50e
1996 - mosfet 20a 300v

Abstract: No abstract text available
Text: ) Rth (ch-a) Note *1 : Tch150°C Note *2 : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50 E AS


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PDF FMC20N50E mosfet 20a 300v
1996 - Not Available

Abstract: No abstract text available
Text: : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50. E AS limited by maximum channel temperature and


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PDF FMC20N50ES
1996 - fmi20n50es

Abstract: No abstract text available
Text: : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50. E AS limited by maximum channel temperature and


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PDF FMI20N50ES fmi20n50es
1996 - FMV20N50E

Abstract: No abstract text available
Text: =25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50 E AS limited by maximum channel temperature and avalanche current


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PDF FMV20N50E O-220F FMV20N50E
1996 - fmp20n50es

Abstract: No abstract text available
Text: : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50. E AS limited by maximum channel temperature and


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PDF FMP20N50ES O-220AB fmp20n50es
1996 - Not Available

Abstract: No abstract text available
Text: : Stating Tch=25°C, IAS=8A, L= 16.7mH , Vcc=50V, RG =50. E AS limited by maximum channel temperature and


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PDF FML20N50ES
1996 - FMV20N50ES

Abstract: fmv20n50e tf 216 10a 250v
Text: =25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50. E AS limited by maximum channel temperature and avalanche current


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PDF FMV20N50ES O-220F FMV20N50ES fmv20n50e tf 216 10a 250v
1996 - fmp20n50e

Abstract: No abstract text available
Text: ) Rth (ch-a) Note *1 : Tch150°C Note *2 : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50 E AS


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PDF FMP20N50E O-220AB fmp20n50e
1996 - fmh20n50e

Abstract: No abstract text available
Text: ) Rth (ch-a) Note *1 : Tch150°C Note *2 : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50 E AS


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PDF FMH20N50E fmh20n50e
1996 - fmh20n50e

Abstract: No abstract text available
Text: : Stating Tch=25°C, IAS =8A, L= 16.7mH , Vcc=50V, RG =50. E AS limited by maximum channel temperature and


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PDF FMH20N50ES fmh20n50e
2013 - Not Available

Abstract: No abstract text available
Text: by maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L = 16.7mH Peak IL = 3.4A, VGS =


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PDF PD-97805 O-257AA) IRHY67434CM IRHY63434CM 90MeV/ O-257AA. MIL-PRF-19500
2N7599T3

Abstract: No abstract text available
Text: temperature. Á VDD = 50V, starting TJ = 25°C, L = 16.7mH Peak IL = 3.4A, VGS = 12V Â ISD ≤ 3.4A, di/dt


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PDF PD-95837A 2N7599T3 IRHY67C30CM O-257AA) IRHY67C30CM IRHY63C30CM 90MeV/ O-257AA. MIL-PRF-19500 2N7599T3
2006 - 95837

Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
Text: with VGS Bias. maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 16.7mH Peak IL =


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PDF PD-95837 O-257AA) IRHY67C30CM IRHY67C30CM IRHY63C30CM 90MeV/ 5M-1994. O-257AA. 95837 PD-95837 RG 2006 10A 600V
2008 - 2n7599

Abstract: 95837 2N7599T3 IRHY67C30CM IRHY63C30CM irhy67c30
Text: 16.7mH Peak IL = 3.4A, VGS = 12V Â ISD 3.4A, di/dt 560A/µs, VDD 600V, TJ 150°C 12 volt VGS


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PDF PD-95837A 2N7599T3 IRHY67C30CM O-257AA) IRHY67C30CM IRHY63C30CM 90MeV/ O-257AA. MIL-PRF-19500 2n7599 95837 2N7599T3 irhy67c30
FML19N50G

Abstract: ex terminals 500mm2
Text: pad area : 500mm2) Note *2 : Tch<150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C,lAS=8.0A,L= 16.7mH


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PDF MS5F6439 H04-004-03 H04-004-03 FML19N50G ex terminals 500mm2
2007 - 20N50E

Abstract: MOSFET 20n50e MP20N
Text: 62.0 Unit /W /W Note *1 : Tch 150 , See F ig.1 and Fig.2 Note *2 : Stating Tch=25 , IAS =8A, L= 16.7mH


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PDF MS5F6837 FMP20N50E H04-004-05 H04-004-03 20N50E MOSFET 20n50e MP20N
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