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Not Available

Abstract: No abstract text available
Text: -3 2 -33 -3 4 -3 5 -36 -3 7 IN D U C T A N C E L Max. Min. 1.35MH 1.65MH 1.98Â , 1.65MH 1.98MH 2.42MH 2.9 7MH 3.63MH 4.29MH 5.10MH 6.14MH 7.48MH 9.00MH 11.0 m h 13.0 MH 16.5


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PDF 43ACH 97/iH 51/XH 25/XH 10/lH 14jUH 40JUH 00/iH
2006 - rj45 FOXCONN usb

Abstract: foxconn dual right usb
Text: SPECIFICATIONS Modular Jack UB Series RJ45 Over Dual USB R/A, T/H Type 1.27mm [.050"] Pitch Mechanical Mating Force: 4Pounds max.(RJ45) 7.88Pounds max.(USB) Unmating Force: 10Pounds max.(RJ45) 2.25Pounds min.(USB) Durability: 1000 Cycles(RJ45) 1500 Cycles(USB) Electrical Current Rating: 0.5A max.(RJ45) 1.0A(USB) Dielectric Withstanding Voltage: 1000V(RJ45) 750V(USB) Insertion Loss: -1.0dB max @ 1-65MH Return Loss: -12dB min @1-80MHz Cross Talk: -35dB min @ 1-65MHz Physical Housing: Thermoplastic


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PDF 88Pounds 10Pounds 25Pounds 1-65MH -12dB 1-80MHz -35dB 1-65MHz rj45 FOXCONN usb foxconn dual right usb
B163

Abstract: B502 B283 B322 B902
Text: .2.81 260mA UU9LFB(H)-B902 Min.9.0mH Max.360µH Max.5.0 180mA UU9LFB(H)-B163 Min. 16.5mH


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PDF -B322 B163 B502 B283 B322 B902
2005 - Not Available

Abstract: No abstract text available
Text: SPECIFICATIONS Modular Jack UB Series RJ45 Over Dual USB R/A, T/H Type 1.27mm [.0 50"] Pitch 10/100 Base -T Mechanical Mating Force: 4Pounds max.(RJ45) 7.88Pounds max.(USB) Unmating Force: 10Pounds max.(RJ45) 2.25Pounds min.(USB) Durability: 1000 Cycles (RJ45) 1500 Cycles(USB) Electrical Current Rating: 0.5A max.(RJ45) 1.0A(USB) Dielectric Withstanding Voltage: 1000V(RJ45) 750V(USB) Insertion Loss: -1.0dB max @ 1-65MH Return Loss: -12dB min @1-80MHz Cross Talk: -35dB min @ 1-65MHz Physical


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PDF 88Pounds 10Pounds 25Pounds 1-65MH -12dB 1-80MHz -35dB 1-65MHz
MDP5N50

Abstract: mosfet 500V 50A mosfet 500v TW18
Text: , di/dt200A/us, VDD=50V, Rg =25 , Starting TJ=25°C 4. L= 16.5mH , IAS=5.0A, July 2008. Version 1.0


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PDF MDP5N50 mosfet 500V 50A mosfet 500v TW18
krlml6402

Abstract: P-Channel HEXFET Power MOSFET P-Channel MOSFET 12V SOT 23 sot23 footprint
Text: rating:pulse width limited by max.junction temperature. *2. StartingTJ=25,L= 1.65mH ,RG=25,IAS=-3.7A. *3


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PDF KRLML6402 OT-23 OT-23 krlml6402 P-Channel HEXFET Power MOSFET P-Channel MOSFET 12V SOT 23 sot23 footprint
ML5203

Abstract: ML5103 ML2803 ML6302 sot-23 marking code pe marking BS SOT-23 SOT-23 marking code BS MOSFET IRL sot23-5 code BBB marking code pe sot-23
Text: , max. junction temperature. Pulse width 400µs; duty cycle 2%. Starting TJ = 25°C, L = 1.65mH


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PDF IRLML6402PbF OT-23/TO-263AB) EIA-481 EIA-541. ML5203 ML5103 ML2803 ML6302 sot-23 marking code pe marking BS SOT-23 SOT-23 marking code BS MOSFET IRL sot23-5 code BBB marking code pe sot-23
MDF5N50

Abstract: mosfet 500V 50A MDF5N mosfet MDF5N50 500V 50A mosfet 500v MagnaChip Semiconductor N-channel 500V mosfet 6903 "Power Diode" 500V 50A n-Channel mosfet 500v
Text: =50V, Rg =25 , Starting TJ=25°C 4. L= 16.5mH , IAS=5.0A, Oct 2008. Version 0.0 VDD=50V, Rg =25


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PDF MDF5N50 mosfet 500V 50A MDF5N mosfet MDF5N50 500V 50A mosfet 500v MagnaChip Semiconductor N-channel 500V mosfet 6903 "Power Diode" 500V 50A n-Channel mosfet 500v
2010 - fast recovery diode 400v 5A

Abstract: No abstract text available
Text: Tstg Operating Junction Temperature Storage Temperature Range Notes: 1. L= 16.5mH , IAS=5.7A, VDD


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PDF O-220AB DB-100 fast recovery diode 400v 5A
2002 - 2SK3607-01MR equivalent

Abstract: 2SK3607-01MR 2sk3607
Text: Drain(D) Gate(G) Source(S) °C °C *6 kVrms < < *1 L= 1.65mH , Vcc=48V *2 Tch < 150°C *3 I F -I D


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PDF 2SK3607-01MR O-220F 2SK3607-01MR equivalent 2SK3607-01MR 2sk3607
2009 - jc f730

Abstract: F730 ID33
Text: limited by maximum junction temperature. b. VDD=50V, starting TJ=25°C,L= 16.5mH , R G=25 , I AS=5.5A c. I


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PDF SDP/F730 O-220 O-220F SDF730 SDP730 O-220/220F jc f730 F730 ID33
2010 - A4 marking diode

Abstract: fast recovery diode 400v 5A
Text: Value Unit TJ Tstg Operating Junction Temperature Storage Temperature Range Notes: 1. L= 16.5mH


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PDF O-220FP DB-100 A4 marking diode fast recovery diode 400v 5A
2002 - 2SK3606-01

Abstract: No abstract text available
Text: L= 1.65mH , Vcc=48V *2 Tch <150°C *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = = *4


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PDF 2SK3606-01 O-220AB 2SK3606-01
Not Available

Abstract: No abstract text available
Text: , steady state. „ Starting TJ = 25°C, L = 1.65mH RG = 25Ω, IAS = -3.7A. http://www.twtysemi.com


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PDF IRLML6402PbF OT-23 -100A/Î
MDD5N50

Abstract: TO 252 dimensions mosfet 500v MAGNACHIP 0342F MOSFET dynamic n-channel 250v power mosfet dpak
Text: , di/dt200A/us, VDD=50V, Rg =25 , Starting TJ=25°C 4. L= 16.5mH , IAS=5.0A, July 2008. Version 1.0


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PDF MDD5N50 TO 252 dimensions mosfet 500v MAGNACHIP 0342F MOSFET dynamic n-channel 250v power mosfet dpak
Not Available

Abstract: No abstract text available
Text: 4 Starting Tj = +25°C, L = 1.65mH , RG = 25Ω, Peak IL = 41A 5 dv/dt numbers reflect the


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PDF APT5010JFLL OT-227
2004 - IRLML6402PBF

Abstract: No abstract text available
Text: single layer 1oz. copper FR4 board, steady state. „ Starting TJ = 25°C, L = 1.65mH RG = 25Ω, IAS


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PDF IRLML6402PbF OT-23 EIA-481 EIA-541. IRLML6402PBF
2011 - IRLML6402 micro3

Abstract: SOT-23 marking .633 10 g 990 IRLML6402 93755D
Text: layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 1.65mH RG = 25, IAS = -3.7A.


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PDF 93755D IRLML6402 OT-23 EIA-481 EIA-541. IRLML6402 micro3 SOT-23 marking .633 10 g 990 IRLML6402 93755D
Not Available

Abstract: No abstract text available
Text: A, VDD = 50 V, flGS = 25 £1 200 /. = 1.65mH , 7] = 25 'C Gate source voltage ^GS


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PDF O-220AB C67078-S1322-A2 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T
2002 - Not Available

Abstract: No abstract text available
Text: : 500mm2) *1 L= 1.65mH , Vcc=48V *2 Tch <150°C *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = =


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PDF 2SK3609-01
2000 - Cramer Coil CSM

Abstract: TL431 cap 400v 4.7uF AN1246 cramer transformers cs5 fuse ic3 chip Cramer Coil capacitor 3.9nF/50v ee16 output 12v power supply
Text: inductance Core 1.65mH C40 EE16 CONNECTING THE DEMOBOARD This demo board has two connectors. Connect


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PDF AN1246 VIPer20A VIPer20A, Cramer Coil CSM TL431 cap 400v 4.7uF AN1246 cramer transformers cs5 fuse ic3 chip Cramer Coil capacitor 3.9nF/50v ee16 output 12v power supply
2002 - 2SK3608-01L

Abstract: 100V 100A mos fet 200V 50A mos fet
Text: L= 1.65mH , Vcc=48V *2 Tch <150°C *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = = *4


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PDF 2SK3608-01L 100V 100A mos fet 200V 50A mos fet
2004 - APT5010JFLL

Abstract: No abstract text available
Text: = +25°C, L = 1.65mH , RG = 25, Peak IL = 41A 5 dv/dt numbers reflect the limitations of the test


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PDF APT5010JFLL OT-227 APT5010JFLL
2003 - IRLML6402

Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
Text: , max. junction temperature. Pulse width 400µs; duty cycle 2%. Starting TJ = 25°C, L = 1.65mH


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PDF 93755B IRLML6402 OT-23 EIA-481 EIA-541. IRLML6402 AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
2011 - 10 g 990

Abstract: No abstract text available
Text: layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 1.65mH RG = 25, IAS = -3.7A.


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PDF 6161A IRLML6402GPbF OT-23 EIA-481 EIA-541. 10 g 990
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