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Eaton Cutler-Hammer
E2KE3150MWA13U66 E2K 600 V, 150A, I Only Electronic Trip W/Aux. SW & Uvr
E2KE3150MWA13U66 ECAD Model
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Newark E2KE3150MWA13U66 Bulk 0 1 $7758.49 $7758.49 $7758.49 $7758.49 $7758.49 More Info
Allied Electronics & Automation E2KE3150MWA13U66 Bulk 0 2 Weeks 1 $7758.49 $7758.49 $7758.49 $7758.49 $7758.49 More Info
ABB Low Voltage Products and Systems
TS3L150MWS4 MCP TS3L 150A 3P F F UR ST
TS3L150MWS4 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark TS3L150MWS4 Bulk 0 1 - - - - - More Info
ABB Low Voltage Products and Systems
T3S150MW MCP T3S 150A 3P UR
T3S150MW ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation T3S150MW Bulk 0 1 $1051.26 $998.69 $998.69 $998.69 $998.69 More Info
ABB Low Voltage Products and Systems
TS3L150MW MCP TS3L 150A 3P F F UR
TS3L150MW ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation TS3L150MW Bulk 0 1 $1289.26 $1224.81 $1224.81 $1224.81 $1224.81 More Info
Eaton Cutler-Hammer
E2KE3150MWU66 3 POLE 150 AMP 600V INST ONLY KEM MINING CIRCUIT BREAKER
E2KE3150MWU66 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation E2KE3150MWU66 Bulk 0 2 Weeks 1 $7292.98 $7292.98 $7292.98 $7292.98 $7292.98 More Info
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Eaton Cutler-Hammer
E2KEM3150MWU66 E2 MINING BKR 3P 150A INSATANT ONLY 50-800A RANGE UVR 120V
E2KEM3150MWU66 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation E2KEM3150MWU66 Bulk 0 2 Weeks 1 $9665.79 $9665.79 $9665.79 $9665.79 $9665.79 More Info
Eaton Cutler-Hammer
E2KE3150MWA06U66 3P 150A INSTANT KEM MNG BRKR 50-800A MAG TRIP RANGE W/
E2KE3150MWA06U66 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation E2KE3150MWA06U66 Bulk 0 2 Weeks 1 $7758.49 $7758.49 $7758.49 $7758.49 $7758.49 More Info

150mW Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - DDA114TH

Abstract: DCX114EH DDC114TH
Text: SOT-563 150MW 85V ROHS 3K SMALL SIGNAL DIODE SWITCHING SOT-563 150MW 75V SINGLE ROHS 3K SCHOTTKY DIODE SOT-563 150MW 40V ROHS 3K SCHOTTKY DIODE SOT-563 150MW 30V ROHS 3K BIPOLAR TRANSISTOR DUAL PNP SOT-563 ROHS 3K PREBIASED TRANSISTOR SOT-563 DUAL R1=R2 NPN/PNP 150MW 10KOhms 10KOhms ROHS 3K PREBIASED TRANSISTOR SOT-563 DUAL R1 ONLY NPN/PNP 150MW 10KOhms ROHS 3K PREBIASED TRANSISTOR SOT-563 DUAL R1<>R2 NPN/PNP 150MW 10KOhms 47KOhms ROHS 3K PREBIASED TRANSISTOR SOT-563 DUAL LOW R1<>R2 NPN/PNP


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PDF DCS/PCN-1077 OT-563 150MW 22KOhms 47KOhms DDA114TH DCX114EH DDC114TH
1998 - XC6382A501PR

Abstract: XC6383E201M SOT895 XC6383A201M XC6383B301PR XC6382F501
Text: Internal Transistor 2.0V ­ 7.0V Available XC6381A201MR 2.0 10 0.9 150mW 155 13.7 70 SOT-23 0.59 XC6381A201PR 2.0 10 0.9 500mW 155 13.7 70 SOT-89 0.57 XC6381A301MR 3.0 10 0.9 150mW 155 7.9 80 SOT-23 0.59 XC6381A301PR 3.0 10 0.9 500mW 155 7.9 80 SOT-89 0.57 XC6381A501MR 5.0 10 0.9 150mW 155 4.3 85 SOT-23 0.59 , XC6381B201MR 2.0 10 0.9 150mW 155 210 70 SOT-23 0.59 XC6381B201PR 2.0 10 0.9 500mW 155 210 70 SOT-89 0.57 XC6381B301MR 3.0 10 0.9 150mW 155 114 80 SOT-23 0.59 XC6381B301PR 3.0 10 0.9 500mW 155 114 80 SOT-89 0.57


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PDF XC638 100KHz XC6381 XC6382 XC6383 XC6385 OT-25 OT-89 OT-89-5 XC6382A501PR XC6383E201M SOT895 XC6383A201M XC6383B301PR XC6382F501
DL-8141-035

Abstract: 808 nm 100 mw
Text: output power : 150mW at 50°C (CW) · Threshold current : Ith= 50 mA (Typ.) · Fundamental transverse mode , condition LD Max. 150mW 0.4 ±0.1 mW 6.5 ±1.0 Reverse Voltage 160 3.5 ±0.5 CW , Operating Current Iop Po= 150mW - 175 240 mA Operating Voltage Vop Po= 150mW - 2.0 2.4 V Lasing Wavelength Lp Po= 150mW 798 808 818 nm Beam 5) Perpendicular Divergence Parallel Qv Po= 150mW 12 16 20 ° Qh Po= 150mW 6 8 10


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PDF DL-8141-035 150mW 150mW 100mW DL-8141-035 808 nm 100 mw
DL-8142-201

Abstract: ku 201
Text: : 150mW at 50°C (CW) · Threshold current : Ith= 50 mA (Typ.) ø3.55±0.1 ø1.6 Effective window , Connection 1) Case temperature 1 3 Standard usage condition LD Max. 150mW 0.4 ±0.1 mW , Threshold Current Ith CW - 50 70 mA Operating Current Iop Po= 150mW - 185 250 mA Operating Voltage Vop Po= 150mW - 1.95 2.3 V Lasing Wavelength Lp Po= 150mW 815 830 840 nm Beam 5) Perpendicular Divergence Parallel Qv Po= 150mW


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PDF DL-8142-201 150mW 150mW 100mW DL-8142-201 ku 201
laser diode lg

Abstract: 80H2 ldnd-80h2 MIL-STD-104D 4022 007 808nm 100mw laser diode 808nm laser diode LG innotek H230 L215
Text: APPROVAL PRODUCT : MODEL NAME : 808nm 150mW Laser Diode LDND-80H2 (CUSTOMER P/N , . APPD. (30)-4021 Page TITLE : 808nm 150mW Laser Diode 2/10 Be careful never to exceed , LDND - 80H2 (30)-4022 Page TITLE : 808nm 150mW Laser Diode 3/10 CONTENTS 1 , LDND - 80H2 (30)-4022 Page TITLE : 808nm 150mW Laser Diode 4/10 1. Application range , Page TITLE : 808nm 150mW Laser Diode 5/10 3. Absolute maximum ratings and Characteristics 3 -


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PDF 808nm 150mW LDND-80H2 laser diode lg 80H2 ldnd-80h2 MIL-STD-104D 4022 007 808nm 100mw laser diode 808nm laser diode LG innotek H230 L215
808 nm 100 mw

Abstract: DL-8141-235
Text: output power : 150mW at 50°C (CW) · Threshold current : Ith= 50 mA (Typ.) · Fundamental transverse mode , condition LD Max. 150mW 0.4 ±0.1 mW 6.5 ±1.0 Reverse Voltage 160 3.5 ±0.5 CW , Operating Current Iop Po= 150mW - 175 230 mA Operating Voltage Vop Po= 150mW - 2.0 2.4 V Lasing Wavelength Lp Po= 150mW 798 808 818 nm Beam 5) Perpendicular Divergence Parallel Qv Po= 150mW 12 16 20 ° Qh Po= 150mW 6 8 10


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PDF DL-8141-235 150mW 150mW 100mW 808 nm 100 mw DL-8141-235
ahy103

Abstract: AHY109 AHY104 AHY124 HY1Z-24V AHY-109 ahy-103 AHY107 AHY123 HY1Z-12V
Text: HY 150mW1c 1. 150mW 1. 150mW 84mW 2. Au 2. 3. VTR 4. Au 1A 3. AHY HY 1 1 HY 11c 11c : 150mW Z : 200mW 0 : 150mW (DC) 2 : 200mW . V (DC) (V) )5V4.5V ()502,000 150mW , 3 V 50 mA 60 150mW 33.3 mA 135 150mW DC 4.5V 75%V () DC 5 V DC 6 V 10%V () 150mW 30 mA 166 150mW 25 mA 240 150mW DC 9


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PDF 150mW1c 150mW 200mW AHY100 ahy103 AHY109 AHY104 AHY124 HY1Z-24V AHY-109 ahy-103 AHY107 AHY123 HY1Z-12V
DL-8142-201

Abstract: No abstract text available
Text: 1 3 PD LD Usage condition CW:< 150mW 2 Electrical and Optical Characteristics , Threshold Current Ith CW - 50 70 mA Operating Current Iop Po= 150mW - 200 250 mA Operating Voltage Vop Po= 150mW - 1.9 2.2 V Lasing Wavelength Lp Po= 150mW 815 830 840 nm Perpendicular Beam 5) Divergence Parallel Qv Po= 150mW 12 16 25 ° Qh Po= 150mW 5 8 11 ° Perpendicular dQv Po= 150mW -3


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PDF DL-8142-201 150mW 100mW DL-8142-201
Not Available

Abstract: No abstract text available
Text: output of 150mW. •M Q W * active layer * : Multiple Quantum Well APPLICATION Optical fiber , oscillation with • H ig h power (CW 150mW ) •9 8 0 n m typical emission wavelength emission , . Typ. Max. Unit Ith CW — 20 50 mA Operating current CW,Po = 150mW — 200 260 mA V op ' Threshold current lOP Operating voltage CW,Po = 150mW — 2.0 2.5 V -< c A X Center wavelength CW,Po = 150mW 980 990 nm Spectral


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PDF 150mW) 980nm 150mW. 180mW 150mW 120mW
2001 - DL-8032-001

Abstract: No abstract text available
Text: Operating Current Iop Operating Voltage Typ. Max. Unit - 50 70 mA Po= 150mW - 185 220 mA Vop Po= 150mW - 1.8 2.2 V Lasing Wavelength Lp Po= 150mW 815 830 840 nm Perpendicular Beam 1) Divergence Parallel Qv Po= 150mW 12 18 25 ° Qh Po= 150mW 5 7 11 ° Perpendicular dAv - - - ±3 ° , Im Po= 150mW Astigmatism Ac Po= 150mW Min. - 1) Full angle at half maximum Note


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PDF DL-8032-001 150mW 100mW DL-8032-001
Laser-Diode

Abstract: optima 638 transistor diode DL8032-001 highpower laser 2 Wavelength Laser Diode sanyo DL-8032-001
Text: an optical output of 150mW and a typical operating wavelength of 830nm. The DL8032-001 has a 9mm , 185 220 mA Po= 150mW Operating voltage Vop 1.8 2.2 V Po= 150mW Lasing Wavelength p 815 830 840 nm Po= 150mW Beam divergence (parallel) // 5 7 11 deg Po= 150mW , (FWHM) Beam divergence (perpendicular) 12 18 25 deg Po= 150mW , (FWHM) 0.7 1.0 mW/mA Monitor current Im 0.15 0.5 2.0 mA Po= 150mW


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PDF DL8032-001 DL8032-001 150mW 830nm. Laser-Diode optima 638 transistor diode highpower laser 2 Wavelength Laser Diode sanyo DL-8032-001
DC DC SET UP 3A

Abstract: POSITIVE VOLTAGE REGULATORS SOT-89 5V 100mA sot89 AE xc9216 datasheet 100mW White Led 805 SOT-89 motorola LED TO-92 PWM dc-dc XC6371 XC6383
Text: DISCRIPTION) SOT-25( 150mW ) SOT-89(500mW) TO-92(300mW) USP-6B(100W) SOT-23( 150mW ) SOT-89(500mW) SOT-223(1200mW) USP-6B(100mW) TO-92(300mW) SOT-89(500mW) SOT-223(1200mW) SOT-23( 150mW ) TO-92(300mW) NOTE , 160mV@100mA VOUT =5.0V SOT-23( 150mW ) SOT-89(500mW) TO-92(300mW) USP-6B(100mW) Ceramic Capacitor , 0.1A 200mV@100mA VOUT =3.0V SOT-25( 150mW ) USP-6B(100mW) SOT-89-5(500mW) Ceramic Capacitor , High Speed LDO 2.0~6.0V ±2 35A 0.1A 400mV@100mA VOUT=3.0V SSOT-24( 150mW ) SOT


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PDF XC61C XC61F XC61G XC612 SSOT-24 OT-23 OT-89 DC DC SET UP 3A POSITIVE VOLTAGE REGULATORS SOT-89 5V 100mA sot89 AE xc9216 datasheet 100mW White Led 805 SOT-89 motorola LED TO-92 PWM dc-dc XC6371 XC6383
2008 - OpNext

Abstract: opnext laser diode
Text: Opnext 642nm / 150mW Laser Diode HL6385DG Series World's First Laser With High Output Power and Single Longitudinal Mode u u u Visible light sources for miniature display Low aspect ratio , Features and Advantages Features High output power ( 150mW @ 40ºC) Visible single mode lasing (642nm wavelength Typ. @ 150mW ) Advantages Improved picture brightness High quality picture display Optical , 280 2.6 9 17 642 Max. 140 350 3 13 22 647 Test Conditions Po= 150mW Po= 150mW Po= 150mW Po= 150mW Po= 150mW


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PDF 642nm 150mW HL6385DG 150mW 150mW) ODE-208-075 ODJ-208-074 current150mW OpNext opnext laser diode
2001 - Laser Diode 14 pin DIL

Abstract: No abstract text available
Text: 150mW Pulsed MQW Laser Diode DIL Module with SMF. 1. DESCRIPTION OL3204N-150/P20 is a 1310nm Laser Diode in DIL package with SMF. 2. FEATURES · · · · · Fiber output: Po= 150mW Pulsed MQW FP , Vf c T Ic Vc Rth Test Conditions -Po= 150mW Po= 150mW , RMS×1 Po= 150mW T=40° C, Po= 150mW , 20nm 8.ATTACHED DATA (at 25°C) (1) If-Po graph (2) spectrum graph at Po= 150mW (3) operating current (Iop) at Po= 150mW (4) Center wavelength (c) at Po= 150mW (5) Spectral Width () at Po= 150mW (6


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PDF JOG-00754 OL3204N-150/P20 1310nm /-20nm 150mW OL3204N-150/P20 150mW 14-pin Laser Diode 14 pin DIL
Not Available

Abstract: No abstract text available
Text: 980nm and standard continuous light output of 150mW. •High power (CW 150mW ) •980nm typical emission , current CW,Po = 150mW — 200 260 mA Vop Operating voltage CW,Po = 150mW 2.0 2.5 V ' Ac Center wavelength CW,Po = 150mW 970 980 990 nm A A Spectral width CW,Po = 150mW ,RMS 0.3 2 nm en Beam divergence angle (parallel) CW,Po = 150mW 5 8 15 deg. 6 ± Beam divergence angle (perpendicular) CW,Po = 150mW 30 , output vs. forward current 1.0 0.8 w 0.6 a> 0.4 0.2 ' 1 1 — 1 1 1 Po= 150mW ,CW - Tc=25°C 1 1 1


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PDF 980nm 150mW. 150mW) 150mW 150mW
2003 - DL-8031-031A

Abstract: No abstract text available
Text: Operating Current Iop Po= 150mW - 180 220 mA Operating Voltage Vop Po= 150mW - 2.0 2.4 V Lasing Wavelength * Lp Po= 150mW 805 808 811 nm Qv Po= 150mW 12 16 20 ° Qh Po= 150mW 6 8 10 ° Perpendicular dQv - - - , 0.8 1.1 - mW/mA Monitoring Output Current Im Po= 150mW 0.2 0.4 0.6 mA Astigmatism As Po= 150mW - 3 - µm Perpendicular Beam 3) Divergence Parallel Off Axis


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PDF DL-8031-031A 150mW DL-8031-031A
2013 - Not Available

Abstract: No abstract text available
Text: Data Sheet HL40041MG GaN Laser Diode 404nm/ 150mW Outline Features: • Operation temperature: -10~+50°C • Optical output power: 150mW (CW) • Violet lasing: 404nm Typ. â , current Iop - 150 250 mA Po= 150mW Operating voltage Vop - - 5.0 V Po= 150mW Beam divergence Parallel to the junction θ// 5 13 25 ° Po= 150mW , 2 Full angle 1/e Beam divergence Perpendicular to the junction θ⊥ 30 45 60 ° Po= 150mW


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PDF HL40041MG 404nm/150mW 150mW 404nm HL40041MG
2003 - DL-8141-035

Abstract: No abstract text available
Text: Current Ith CW - 40 60 mA Operating Current Iop Po= 150mW - 185 190 mA Operating Voltage Vop Po= 150mW - 2.0 2.4 V Lasing Wavelength * Lp Po= 150mW 798 808 818 nm Qv Po= 150mW 12 16 20 ° Qh Po= 150mW 6 8 10 , Differential Efficiency dPo/dIop - 0.8 1.2 - mW/mA Monitoring Output Current Im Po= 150mW 0.15 0.35 0.5 mA Astigmatism As Po= 150mW - 3 - µm Perpendicular Beam


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PDF DL-8141-035 150mW DL-8141-035A DL-8141-035B DL-8141-035C DL-8141-035
2003 - DL-8031-031B

Abstract: No abstract text available
Text: Operating Current Iop Po= 150mW - 180 220 mA Operating Voltage Vop Po= 150mW - 2.0 2.4 V Lasing Wavelength * Lp Po= 150mW 803 808 813 nm Qv Po= 150mW 12 16 20 ° Qh Po= 150mW 6 8 10 ° Perpendicular dQv - - - , 0.8 1.1 - mW/mA Monitoring Output Current Im Po= 150mW 0.2 0.4 0.6 mA Astigmatism As Po= 150mW - 3 - µm Perpendicular Beam 3) Divergence Parallel Off Axis


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PDF DL-8031-031B 150mW DL-8031-031B
2003 - DL-8031-031C

Abstract: No abstract text available
Text: Operating Current Iop Po= 150mW - 180 220 mA Operating Voltage Vop Po= 150mW - 2.0 2.4 V Lasing Wavelength * Lp Po= 150mW 798 808 818 nm Qv Po= 150mW 12 16 20 ° Qh Po= 150mW 6 8 10 ° Perpendicular dQv - - - , 0.8 1.1 - mW/mA Monitoring Output Current Im Po= 150mW 0.2 0.4 0.6 mA Astigmatism As Po= 150mW - 3 - µm Perpendicular Beam 3) Divergence Parallel Off Axis


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PDF DL-8031-031C 150mW DL-8031-031C
2013 - Not Available

Abstract: No abstract text available
Text: Data Sheet HL40041MG GaN Laser Diode 404nm/ 150mW Outline Features: • Operation temperature: -10~+50°C • Optical output power: 150mW (CW) • Violet lasing: 404nm Typ. â , current Iop - 150 250 mA Po= 150mW Operating voltage Vop - - 5.0 V Po= 150mW Beam divergence Parallel to the junction θ// 5 13 25 ° Po= 150mW , 2 Full angle 1/e Beam divergence Perpendicular to the junction θ⊥ 30 45 60 ° Po= 150mW


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PDF HL40041MG 404nm/150mW 150mW 404nm HL40041MG
Not Available

Abstract: No abstract text available
Text: Threshold Current Ith CW - 50 70 mA Operating Current Iop Po= 150mW - 180 220 mA Operating Voltage Vop Po= 150mW - 2.0 2.4 V Lasing Wavelength * Lp Po= 150mW 805 808 811 nm Qv Po= 150mW 12 16 20 ° Qh Po= 150mW 6 , Output Current Im Po= 150mW 0.2 0.4 0.6 mA Astigmatism As Po= 150mW - 3


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PDF DL-8031-031A 150mW
2001 - Not Available

Abstract: No abstract text available
Text: 150mW Pulsed MQW Laser Diode Coaxial Module with MMF. 1. DESCRIPTION OL399N-150/P20 is a 1300nm Laser Diode in coaxial package with 50µm MMF. 2. FEATURES · · · · Fiber output: Po= 150mW Pulsed , Spectral Width Symbol Ith Iop Vf c Test Conditions -Po= 150mW Po= 150mW , RMS×1 Min , 20nm 8.ATTACHED DATA (at 25°C) (1) If-Po graph (2) spectrum graph at Po= 150mW (3) operating current (Iop) at Po= 150mW (4) Center wavelength (c) at Po= 150mW (5) Spectral Width () at Po= 150mW (6


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PDF JOG-00183 OL399N-150/P20 1300nm /-20nm 150mW OL399N-150/P20 150mW 150mW,
2003 - 5v 100mw laser diode

Abstract: DL-8032-001
Text: // // dPo/dIop Im As Condition CW Po= 150mW Po= 150mW Po= 150mW Po= 150mW Po= 150mW Po= 150mW Po= 150mW , ) 0.8 Po= 150mW Tc=25°C 0.6 0.4 0.2 0 -40 -30 -20 -10 0 10 Angle ( ° ) 175 Lasing wavelength vs. Temperature 20 30 40 Lasing wavelength vs. Output power Po= 150mW Tc=25°C 835 Relative intensity Lasing wavelength p (nm) 840 830 825 150mW


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PDF ENN7589 DL-8032-001 5v 100mw laser diode DL-8032-001
2008 - Not Available

Abstract: No abstract text available
Text: JOG-00183 Optical Components OL399N-150-P20 Rev.4 [10. 2008 ] 1300nm+/-20nm 150mW Pulsed , coaxial package with 50µm MMF. 2. FEATURES · Fiber output: Po= 150mW · Pulsed MQW FP Laser  , Symbol Ith Iop Vf λc σ Test Conditions -Po= 150mW Po= 150mW , RMS×1 Min. -1280 - , °C) (1) If-Po graph (2) spectrum graph at Po= 150mW (3) operating current (Iop) at Po= 150mW (4) Center wavelength (λc) at Po= 150mW (5) Spectral Width (σ) at Po= 150mW (6) Threshold current (Ith) 2/5 JOG


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PDF JOG-00183 OL399N-150-P20 1300nm /-20nm 150mW OL399N-150-P20 150mW 150mW,
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