The Datasheet Archive

150OC Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - L1N08LE

Abstract: RLP1N08LE TB334
Text: : 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified , , like most Power MOSFET devices today, is limited to 150oC. The maximum voltage allowable can , · 1A, 80V · ILIMIT at 150oC = 1.5A Maximum · Built-in Current Limiting · ESD Protected · Controlled Switching Limits EMI and RFI · Specified for 150oC Operation · Related Literature - TB334 , ) Limiting Current VDS = 65V, VGS = 0V VGS = 5V, TC = 150oC rDS(ON) IDS(Lim) Turn-On Time t


Original
PDF RLP1N08LE 150oC 150oC TB334 O-220AB TA09842. RLP1N08LE L1N08LE TB334
1998 - MCT thyristor

Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Text: 3A65P100F2, M Thyristor (MCT) T See MC Features · 35A, -600V · VTM = -1.35V (Max) at I = 35A and + 150oC · , Turn-Off Capability at + 150oC · Anti-Parallel Diode A A K GR G Description The MCT is an , + 150oC with active switching. This device features a discrete anti-parallel diode that shunts current , Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = + 150oC CAUTION , = IK115 RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -300V TC = + 150oC TC = +25oC TC = + 150oC TC =


Original
PDF MCTV35P60F1D O-247 CT3D65 3A65P100F2, -600V 150oC factor/100) MCT thyristor MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
SD5000

Abstract: No abstract text available
Text: to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC


Original
PDF SD5000 SD5001 SD5002 SD5400 SD5401 SD5402 -107dB DS063
1995 - MOS Controlled Thyristor

Abstract: MCTA75P60E1 MCTV75P60E1
Text: · VTM = -1.3V(Maximum) at I = 75A and + 150oC · 2000A Surge Current Capability ANODE CATHODE , Capability at + 150oC Description JEDEC MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled , junction temperatures up to + 150oC with active switching. Symbol G A PACKAGING AVAILABILITY PART , (Final) = TJ (Max) = + 150oC CAUTION: These devices are sensitive to electrostatic discharge. Users , = -600V, VTM mA TC = +25oC - - 100 µA TC = + 150oC - - 4 mA TC


Original
PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MOS Controlled Thyristor MCTA75P60E1 MCTV75P60E1
1998 - MOS Controlled Thyristor

Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
Text: -1.3V(Maximum) at I = 75A and + 150oC · 2000A Surge Current Capability · 2000A/µs di/dt Capability · MOS Insulated Gate Control · 120A Gate Turn-Off Capability at + 150oC Description The MCT is an MOS , common to SCR type thyristors, and operate at junction temperatures up to + 150oC with active switching , and TJ (Final) = TJ (Max) = + 150oC CAUTION: These devices are sensitive to electrostatic discharge , +25oC VGA = +18V L = 200µH, IK = IK90 RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -300V TC = + 150oC TC =


Original
PDF 3D65P1 100F2, MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MOS Controlled Thyristor MCT thyristor MCTV75P60E1 MA75P60E1
1999 - "MOS Controlled Thyristors"

Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTV65P1 2000A MOS MCT thyristor 1000v
Text: ) Features Package JEDEC STYLE TO-247 · 65A, -1000V · VTM -1.4V at I = 65A and + 150oC ANODE , /µs di/dt Capability · MOS Insulated Gate Control · 100A Gate Turn-Off Capability at + 150oC , + 150oC with active switching. CATHODE (FLANGE) Symbol G PART NUMBER INFORMATION PART NUMBER , ) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = + 150oC CAUTION: These devices are sensitive to , 3 mA - - 100 µA TC = + 150oC - - 4 mA TC = +25oC - - 100


Original
PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTV65P1 2000A MOS MCT thyristor 1000v
1998 - sumitomo crm epoxy

Abstract: EME G600 CRM 1076NS SUMITOMO EME G600 sumitomo epoxy 1076 epoxy CRM1076NS Sumitomo CRM1076NS sumitomo crm crm-1076NS CRM1076NS
Text: + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC · · · · · · · · ·


Original
PDF SD5000 SD5001 SD5002 SD5400 SD5401 SD5402 SD5000N SD5001N SD5002N sumitomo crm epoxy EME G600 CRM 1076NS SUMITOMO EME G600 sumitomo epoxy 1076 epoxy CRM1076NS Sumitomo CRM1076NS sumitomo crm crm-1076NS CRM1076NS
1998 - SD5000N

Abstract: Calogic SD5002 SD5402 SD5401 SD5002N SD5001N SD5001 SD5000 SD5400
Text: Carriers Sorted Chips in Carriers Sorted Chips in Carriers -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC SOIC PIN CONFIGURATION DUAL IN LINE


Original
PDF SD5000 SD5001 SD5002 SD5400 SD5401 SD5402 -107dB DS063 SD5000N Calogic SD5002 SD5402 SD5002N SD5001N
1999 - MCT thyristor

Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
Text: + 150oC · 2000A Surge Current Capability ANODE CATHODE GATE RETURN GATE · 2000A/µs di/dt Capability · MOS Insulated Gate Control · 120A Gate Turn-Off Capability at + 150oC Description JEDEC , + 150oC with active switching. Symbol G A PART NUMBER INFORMATION PART NUMBER PACKAGE , Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = + 150oC CAUTION , - 100 µA TC = + 150oC - - 4 mA TC = +25oC - - 100 µA TC =


Original
PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MCT thyristor MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
1998 - SD5002

Abstract: SD5400CY SD5000 quad calogic sd5000 SD5002N
Text: in Carriers -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC -55oC to + 150oC SO PIN CONFIGURATION DUAL IN LINE PACKAGE S2 1 14 S1 BODY 2 13


Original
PDF SD5000 SD5001 SD5002 SD5400 SD5401 SD5402 -107dB SD5002 SD5400CY SD5000 quad calogic sd5000 SD5002N
1999 - HGTG20N120C3D

Abstract: 20N120C3D 12V 200A Relay LD26
Text: moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating , . . . . . . . . . . . . 300ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss Symbol , at TJ = 150oC , Figure 2 . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC , µA TC = 150oC Collector to Emitter Breakdown Voltage TEST CONDITIONS - - 2.0 mA TC = 25oC - 2.4 3.0 V TC = 150oC - 2.2 2.9 V 5.0 7.0 7.5 V


Original
PDF HGTG20N120C3D HGTG20N120C3D 150oC. 20N120C3D 12V 200A Relay LD26
2001 - g7n60b3d

Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
Text: much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The , Typical Fall Time. . . . . . . . . . . . . . . . .120ns at TJ = 150oC · Short Circuit Rating · Low , 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6 56 ±20 ±30 35A at 600V A , ICES VCE(SAT) VGE(TH) 600 - - V TC = 25oC - - 100 µA TC = 150oC , 150oC - 1.8 2.1 V - 2.1 2.4 V 3.0 5.1 6.0 V - - ±100 nA


Original
PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d G7N60B3 HGT1S7N60B3DS9A RHRD660 2MH22
2001 - g20n60c3d

Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
Text: only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in , . . . . . . . . . . . .108ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss · , . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . , CONDITIONS IC = 250µA, VGE = 0V VCE = BVCES IC = IC110 VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±20V


Original
PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60c3d equivalent LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
2001 - HGTG40N60B3 equivalent

Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
Text: moderately between 25oC and 150oC. File Number · 70A, 600V, TC = 25oC · 600V Switching SOA Capability · Typical Fall Time. . . . . . . . . . . . . . . . .100ns at TJ = 150oC · Short Circuit Rating · , 150oC , Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V Collector to , IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC - - 6.0 mA - 1.4 , SSOA TJ = 150oC RG = 3 VGE = 15V L = 100µH Gate to Emitter Plateau Voltage On-State Gate


Original
PDF HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6
2000 - HGT1S1N120BNDS

Abstract: HGT1S1N120BNDS9A HGTP1N120BND RHRD4120 TB334 1N120BND
Text: SOA Capability · Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC · Short , Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation , µA - - 1.0 mA TC = 25oC - 2.5 2.9 V TC = 150oC - 3.8 4.3 V , Switching SOA SSOA TJ = 150oC , RG = 82, VGE = 15V, L = 2mH, VCE(PK) = 1200V 6 - - A VGEP Gate to Emitter Plateau Voltage VGE(TH) VCE = BVCES TC = 25oC TC = 150oC ICES


Original
PDF HGTP1N120BND, HGT1S1N120BNDS HGTP1N120BND HGT1S1N120BNDS TA49316. RHRD4120 TA49056) HGT1S1N120BNDS9A RHRD4120 TB334 1N120BND
1995 - MCT thyristor

Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
Text: (Max) at I = 35A and + 150oC · 800A Surge Current Capability A · 800A/µs di/dt Capability A K · MOS Insulated Gate Control GR G · 50A Gate Turn-Off Capability at + 150oC · , thyristors, and operate at junction temperatures up to + 150oC with active switching. This device features a , TJ (Final) = TJ (Max) = + 150oC CAUTION: These devices are sensitive to electrostatic discharge , CONDITIONS MIN TYP MAX UNITS On-State Voltage VTM TC = + 150oC - - 5 mA TC


Original
PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
2001 - g7n60

Abstract: G7N60B3
Text: much lower on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The , SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC • Short , ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . , mA TC = 25oC - 1.8 2.1 V TC = 150oC Collector to Emitter Saturation Voltage ICES 600 TC = 25oC TC = 150oC Collector to Emitter Leakage Current IC = 250µA, VGE = 0V


Original
PDF HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60 G7N60B3
2000 - G30N60B3

Abstract: HGTG30N60B3 LD26 TA49170
Text: moderately between 25oC and 150oC. File Number · 60A, 600V, TC = 25oC · 600V Switching SOA Capability · Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC · Short Circuit Rating · , . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . , BVCES IC = IC110, VGE = 15V TC = 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE Gate to Emitter Leakage Current IGES VGE = ±20V Switching SOA SSOA TJ = 150oC , RG = 3


Original
PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC G30N60B3 LD26 TA49170
2001 - HGT1S12N60B3S

Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60
Text: on-state voltage drop varies only moderately between 25oC and 150oC. File Number · 27A, 600V, TC = , . . . . . . . . . . . . . . 112ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss · , Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA , 250 µA TC = 150oC TC = 25oC TC = 150oC - - 2.0 mA - 1.6 2.1 V , ±20V 4.5 - ±250 nA 96 - - A Switching SOA SSOA TJ = 150oC , RG = 25


Original
PDF HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60B3 HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 g12n60
2001 - g20n60c3d

Abstract: g20n60 HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 N-CHANNEL 45A TO-247 POWER MOSFET g20n60c3d equivalent
Text: only moderately between 25 oC and 150oC. The IGBT used is development type TA49178. The diode used in , 108ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss · Hyperfast Anti-Parallel Diode , 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V Power Dissipation , IC = IC110 VGE = 15V IC = 250µA, VCE = VGE VGE = ±20V TJ = 150oC , RG = 10, VGE = 15V, L = , Corporation TC = 25oC TC = 150oC TC = 25oC TC = 150oC IGBT and Diode at TJ = 25oC ICE = IC110 VCE =


Original
PDF HGTG20N60C3D HGTG20N60C3D 150oC. TA49178. RHRP3060 TA49063) g20n60c3d g20n60 LD26 RHRP3060 TA49063 TA49178 N-CHANNEL 45A TO-247 POWER MOSFET g20n60c3d equivalent
2003 - g30n60b3

Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Text: bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. , . . . . . 90ns at TJ = 150oC · Short Circuit Rating · Low Conduction Loss The IGBT is ideal for , Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA , 25oC TC = 150oC TC = 25oC TC = 150oC IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC , RG = 3, VGE = 15V, L = 100µH VGEP QG(ON) td(ON)I trI td(OFF)I tfI IGBT and Diode


Original
PDF HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 G30N60 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
1999 - 20N60C3R

Abstract: 20n60c3 20n60c n-channel, 75v, 80a hg*20n60 HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R RURP1560 HGT1S20N60C3R
Text: VCE(ON). This value of EON was obtained with a RURP1560 diode at TJ = 150oC. A different diode or , value at 150oC. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power , Capability · Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . 330ns · Short Circuit Rating at TJ = 150oC . . . . . . . . . . . . . 10µs · Low Conduction Loss Ordering Information PART NUMBER , . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC , Fig. 12 . . . . . . . . . . . . . .


Original
PDF HGTG20N60C3R, HGTP20N60C3R, HGT1S20N60C3R, HGT1S20N60C3RS 150oC 330ns 20N60C3R 20n60c3 20n60c n-channel, 75v, 80a hg*20n60 HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R RURP1560 HGT1S20N60C3R
2001 - 1N120CN

Abstract: 1N120CND GEM X 365 HGT1S1N120CNDS HGT1S1N120CNDS9A HGTP1N120CND RHRD4120 TB334
Text: SOA Capability · Typical EOFF . . . . . . . . . . . . . . . . . . 200µJ at TJ = 150oC · Short , Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA , 125oC TC = 150oC TC = 25oC TC = 150oC IC = 50µA, VCE = VGE MIN TYP MAX UNITS 1200 , = ±20V - - ±250 nA Switching SOA SSOA TJ = 150oC , RG = 82 , VGE = 15V, L = 2mH , MAX UNITS - IGBT and Diode at TJ = 150oC , ICE = 1.0 A, VCE = 0.8 BVCES, VGE = 15V, RG = 82


Original
PDF HGTP1N120CND, HGT1S1N120CNDS HGTP1N120CND HGT1S1N120CNDS TA49317. RHRD4120 TA49056) 1N120CN 1N120CND GEM X 365 HGT1S1N120CNDS9A RHRD4120 TB334
2000 - G7N60B3

Abstract: G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 HGT1S7N60B3S
Text: varies only moderately between 25oC and 150oC. File Number Packaging · 600V Switching SOA Capability · Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC · Short Circuit Rating · , . VGEM Switching Safe Operating Area at TJ = 150oC , Figure 2 . . . . . . . . . . . . . . . . . . . , Current TC = 25oC TC = 150oC TC = 25oC TC = 150oC TJ = 150oC RG = 50 VGE = 15V L = 100µH , Both at TJ = 150oC ICE = IC110, VCE = 0.8 BVCES, VGE = 15V, RG =50, L = 2mH Test Circuit (Figure 17


Original
PDF HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
1997 - G40N60B3

Abstract: G40N60
Text: bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. , 600V Switching SOA Capability · Typical Fall Time . . . . . . . . . . . . . . 100ns at TJ = 150oC · , Operating Area at TJ = 150oC , Figure 2 . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total , BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.0 VCE = 480V VCE = 600V 200 100 TYP 25 1.4 , = 150oC RG = 3 VGE = 15V L = 100µH Gate to Emitter Plateau Voltage On-State Gate Charge VGEP


Original
PDF HGTG40N60B3 HGTG40N60B3 150oC. G40N60B3 1-800-4-HARRIS G40N60B3 G40N60
Supplyframe Tracking Pixel