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Not Available

Abstract: No abstract text available
Text: VIS VG264260CJ 2 62, 144x16-B it CMOS Dynamic RAM Preliminary D escription T he device , address I VSS Document: 1G5-0125 Rev.1 Page 1 VIS Preliminary VG264260CJ 2 62, 144x16-B , 2 62, 144x16-B it CMOS Dynamic RAM Preliminary TRUTH TABLE ADDRESSES FU N C TIO N ROW , ti G5-0125 N otes Page 3 VIS VG264260CJ 2 62, 144x16-B it CMOS Dynamic RAM , , 144x16-B it CMOS Dynamic RAM Preliminary DC C haracteristics (Ta = 0 to + 7 0 °Q V cc = + 5 V Â


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PDF VG264260CJ 144x16-B 144-w 40-pin /28/30/35/40ns 40-Pin 264269G 400mii, 1G5-0125
G5012

Abstract: VG264260CJ-4 ICC1
Text: VIS ? Description Features Preliminary VG264260CJ 262, 144x16-B it CMOS Dynamic RAM The , 262, 144x16-B it CMOS Dynamic RAM Document:1 G5-0125 Rev.1 Page 2 VIS ? TRUTH TABLE , Preliminary VG264260CJ 262, 144x16-B it CMOS Dynamic RAM ADDRESSES LCAS UCAS H L H L L H L L H -> L H - , 262, 144x16-B it CMOS Dynamic RAM Symbol vT Vcc tallT PT t opt t stg Value -0.5 to +7.0 -0.5 to , Symbol Operating current Icc1 Preliminary VG264260CJ 262, 144x16-B it CMOS Dynamic RAM (Ta = 0 to


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PDF VG264260CJ 144x16-B 144-word 40-pin 25/28/30/35/40ns addG264260CJ-4 VG264269Gd-3 G5012 VG264260CJ-4 ICC1
1999 - VG264265

Abstract: VG264260B
Text: X X VG264260BJ 262, 144x16-Bit CMOS Dynamic RAM ACTIONn Maintain Power-Down Maintain Self , VG264260BJ 262, 144x16-Bit CMOS Dynamic RAM COMMANDACTION COMMAND INHBIT (NOP/continue previous operation , . VG264260BJ 262, 144x16-Bit CMOS Dynamic RAM 4. The following states must not be interrupted by a command , L L H H L L H H L L VG264260BJ 262, 144x16-Bit CMOS Dynamic RAM COMMANDACTION COMMAND INHBIT , been precharged, and tRP has been met. accesses are in progress. VG264260BJ 262, 144x16-Bit CMOS


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PDF VG264260BJ 144x16-Bit edg16 1G5-0157 VG264265 VG264260B
1998 - VG264265BJ

Abstract: VG264265 VG264265BJ-4 vg264265bj-35 1G5-0017 VG3617801AT VG3617801AT-10 vg264265b
Text: . VG264265BJ 262, 144x16-Bit CMOS Dynamic RAM The device is CMOS Dynamic RAM organized as 262,144 - words x , , 144x16-Bit CMOS Dynamic RAM Block Diagram WE LCAS UCAS CAS CONTROL LOGIC DATA-IN BUFFER DQ1 . , STANDBY H LCAS HX UCAS HX WE X OE X ROW X COL X VG264265BJ 262, 144x16-Bit CMOS Dynamic RAM DQS High , to + 125 VG264265BJ 262, 144x16-Bit CMOS Dynamic RAM Unit V V mA W ¢J ¢J Recommended DC , 170 160 Max Min VG264265BJ -4 Max -45 Min Max VG264265BJ 262, 144x16-Bit CMOS Dynamic RAM Unit


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PDF VG264265BJ 144x16-Bit 35/40/45/50ns 1G5-0017 VG264265 VG264265BJ-4 vg264265bj-35 1G5-0017 VG3617801AT VG3617801AT-10 vg264265b
VG264265

Abstract: ut501 144XL
Text: VG26(V)4265CJ 262, 144x16-B it CMOS Dynamic RAM Description The device is CMOS Dynamic RAM , ) VG26(V)4265CJ 262, 144x16-Bit CMOS Dynamic RAM TRUTH TABLE ADDRESSES FUNCTION RAS STANDBY READ : WORD , )4265CJ 262, 144x16-Bit CMOS Dynamic RAM Absolute Maximum Ratings Parameter Voltage on any pin relative , . 1G 5-0118(3) 41 VG26(V)4265CJ 262, 144x16-Bit CMOS Dynamic RAM DC Characteristics: 3.3V , V VOL I V 42 1G 5-0118Ì3) VG26(V)4265CJ 262, 144x16-Bit CMOS Dynamic RAM AC


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PDF 4265CJ 144x16-B 40-pin 25/28/30/35/40ns 40/50/60ns 1G5-0118 VG264265 ut501 144XL
1998 - VG264265BJ

Abstract: VG264265BJ-4 VG26V4265CJ
Text: VIS Description Preiminary VG26V4265CJ 262, 144x16-Bit CMOS Dynamic RAM The device is CMOS , VG26V4265CJ 262, 144x16-Bit CMOS Dynamic RAM Block Diagram WE LCAS UCAS CAS CONTROL LOGIC DATA-IN , H L L H L L HL HL HL HL HL HL L L H L Preiminary VG26V4265CJ 262, 144x16-Bit CMOS Dynamic RAM , Storage temperature Preiminary VG26V4265CJ 262, 144x16-Bit CMOS Dynamic RAM Symbol VT Vcc IOUT PD , ) Parameter Symbol Test Conditions Preiminary VG26V4265CJ 262, 144x16-Bit CMOS Dynamic RAM VG26V265BJ


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PDF VG26V4265CJ 144x16-Bit 40/50/60ns 40-PIN 1G5-0113 VG264265BJ-4 VG264265BJ-5 VG264265BJ-6 VG26V4265BJ-5 VG264265BJ
fr9z

Abstract: VG264260
Text: CAS signals must be active (LCAS or UCAS). 1G 5-01 2 5 Í1 ) 11 VG264260CJ 262, 144x16-Bit , Test Conditions Preliminary VG264260CJ 262, 144x16-Bit CMOS Dynamic RAM VG264260CJ -25 -28 -3 , voltage. 105-0125(1) 13 VG264260CJ 262, 144x16-Bit CMOS Dynamic RAM Preliminary VISH AC , , 144x16-Bit CMOS Dynamic RAM Write Cycle VG264260CJ -25 Parameter Write command setup time Write , Preliminary VG264260CJ 262, 144x16-Bit CMOS Dynamic RAM 1G 5-0125Î1) 19 VG264260CJ 262, 144x16-Bit


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PDF VG264260CJ 144x16-- 144-word 40-pin 25/28/30/35/40ns 0s035 fr9z VG264260
TC524258BJ

Abstract: TC528128BJ-80 TC524258B TC524300SF TC524256BFT-80 tc524258 tc528128 TC528257 TC524300 TC524256
Text: -80 2MBit TC528267J/SZ/FT-70 TC528267J/SZ/FT-80 ·TC524162SF/FT-60 262, 144x16 'TC524162SF/FT-70 'T C524165SF/FT-60 262, 144x16 ·TC524165SF/FT-70 4MB» ·TC524262SF/FT-60 262, 144x16 'TC524262SF/FT-70 'TC524265SF/FT-60 262, 144x16 ·TC524265SF/FT-70 "TC524300SF-20 "TC524300SF-30 4.3MBit "TC52V4300SF-30 "TC52V4300SF-50 545


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PDF TC524256BJ/BZ-80 TC524256BJ/BZ-10 TC524258BJ/BZ-80 TC524258BJ/BZ-10 TC524256BFT-80 TC524256BFT-10 TC524258BFT-80 TC524258BFT-10 TC528126BJ-80 TC528126BJ-10 TC524258BJ TC528128BJ-80 TC524258B TC524300SF tc524258 tc528128 TC528257 TC524300 TC524256
23c4001

Abstract: No abstract text available
Text: UNITED MICROELECTRONICS 30E D ■TBSSÛS2 PD00ai3 b 2 62,144X 1 6 /5 2 4 ,2 8 8 X 8-BIT U M 2 3 C 4 0 0 0 CMOS MASK-PROGRAMMABLEi ROM Pin Configuration Features ■■■■■■■■■2 6 2 , 144x16-bit /524,288x8-bit organization Single +5V power supply Access times: 150/200 ns (max.) Current: Operating: 40 mA (max,) Standby: 30 ¿/A (max.) 3-state outputs for wired-OR expansion Mask programmed for Chip Enable (Powerdown) CE/ CE and output Enable OE/OE/NC Fully


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PDF PD00ai3 144x16-bit/524 288x8-bit 23C4001 23c4001
KM23C4100B

Abstract: I0110
Text: KM23C41 OOB(G/FP) 4M-Bit (512K x 8/256K x 16) CMOS MASK ROM CMOS MASK ROM FEATURES · Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262, 144x16 · Fast access time: 120ns (max.) · Supply voltage: single + SV · Current consumption Operating: 60 mA(max.) Standby: 50/xA (max.) · Fully static operation · All inputs and outputs TTL compatible · Three state outputs · Polarity programmable , <<<< 144x16 )/ (52 4,2 88 x8) nnnnnnnnnnn CO *r A3 C A2 C 2


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PDF KM23C41 8/256K 144x16 120ns 50/xA 40-pin 44-pin KM23C4100B I0110
Not Available

Abstract: No abstract text available
Text: VFD Module GU-7000 series GU144X16D-7053B 144x16 dot graphic type on same size PCB as 20 character x 2 line small character unit. Can fit spaces where graphic units have previously not been an option. Also useful for making a more compact product without compromising the display. Specifications Parameter Power supply voltage Symbol VCC Min. 4.75 Typ. 5.00 Max. 5.25 Unit VDC Condition - Parameter 'L' Logic Input Current Symbol Min. Typ. Max


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PDF GU-7000 GU144X16D-7053B 144x16 9600bps 19200bps 38400bps* 115200bps
TC551001APL

Abstract: tc551001
Text: -85L "TC554161 FTL/TRL-10L 262, 144x16 70 85 100 70 85 100 0.33 100 85 100 85 100 70 85 100 131,072 x 8 32,768 x 8


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PDF TC5564APL/AFL-15 64KBit TC5564APL/AFL-20 TC55257BPL/BFL/BSPUBFTUBTRL-85 TC55257BPL/BFL/BSPL/BFTL/BTRL-10 TC55257BPL/BFL/BSPL/BFTL/BTRL-85L TC55257BPL/BFL/BSPL/BFTL/BTRL-10L TC55257BPI/BFI/BSPI/BFTI/BTRI-1OL TC55257CPL/CFl /CSPl7CFTLyCTRL-70 TC551001APL tc551001
UPD424260LE-70

Abstract: 512X512X16
Text: UPD424260LE-70(1/2) IL08 * C-MOS 4M (262, 144x16 ) BIT DYNAMIC RAM - TOP VIEW - 1 V DD (+5V) GND 40 I/O1 IN/OUT 2 39 I/O16 IN/OUT I/O2 IN/OUT 3 38 I/O15 IN/OUT I/O3 IN/OUT 4 37 I/O14 IN/OUT I/O4 IN/OUT 5 36 I/O13 IN/OUT 6 V DD (+5V) GND 35 I/O5 IN/OUT 7 33 I/O11 IN/OUT I/O7 IN/OUT 9 32 I/O10 IN/OUT I/O8 IN/OUT 10 31 I/O9 IN/OUT A0 A1 A2 A3 A4 A5 A6 A7 A8 34 I/O12 IN/OUT I/O6 IN/OUT 8 16 17 18 19 22 23 24 25


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PDF UPD424260LE-70 144x16) I/O16 I/O15 I/O14 I/O13 I/O11 I/O10 I/O12 I/O1-16 512X512X16
TC578200D

Abstract: AD-12 tc544000ap AD12 TC578200 TC57400AD-150
Text: -150 524,288 x 8 262, 144x16 524,288 X 8 65,536 X 16 131,072 x 8 Organization Max. Access Time (ns) 120 150


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PDF TC5710001/AD-12 TC5710001AD-150 072x8 TC57H100Q/1AD-85 TC57H1000/1 AD-100 TC57H1024AD-85 TC57H0124AD-100 TC57H1025AD-55 TC57H1025AD-70 TC578200D AD-12 tc544000ap AD12 TC578200 TC57400AD-150
KM416C256ALJ-7

Abstract: No abstract text available
Text: IN BUFFER 2-5 7 - 10 DQ1 - DQ8 REFRESH COUNTER MEMORY ARRAY 262, 144X16 CELLS ROW


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PDF KM416C256ALJ-7 144X16
524,288 x 8 bit

Abstract: NCC12 UM23C4000 UM-23
Text: UNITED MICROELECTRONICS 30E D TBSSÛS2 PD00ai3 b ■-p^p^-j ^ 262,144X 16/524,288X 8-BIT UM23C4000 CMOS MA SK - PRO GRA MM A BL E i ROM Features ■262, 144x16-bit /524,288x8-bit organization ■Single +5V power supply ■Access times: 150/200 ns (max.) ■Current: Operating: 40 mA (max.) Standby: 30 ¿/A (max.) ■3-state outputs for wired-OR expansion ■Mask programmed for Chip Enable (Powerdown) CE/ CE and output Enable OE/OE/NC ■Fully static operation ■TTL-compatible inputs and


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PDF PD00ai3 UM23C4000 144x16-bit/524 288x8-bit 524,288 x 8 bit NCC12 UM-23
27C4096 eprom

Abstract: 27C4096CP 27C4096 44PIN HN27C4096CP-12 HN27C4096CP-15 Hitachi Scans-001
Text: 150 5 70 50 4. 5-5. 5 90/1 0.8 2.2 12 0. 45/2. 1 2. 4/0. 4 20 4M CMOS ONE TIME EPROM (262, 144X16


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PDF 27C4096CP HN27C4096CP-12 HN27C4096CP-15 144X16) 44PIN 27C4096 eprom 27C4096CP 27C4096 44PIN Hitachi Scans-001
PM-0254

Abstract: MXIc MX28F4100 Q0-Q15
Text: Wl^™ MX28F41OO MACRONIX, INC._^ * 4M-BIT (51 SK x 8) CMOS FLASH MEMORY FEATURES • 524,288x8/262, 144x16 switchable • Fast access time: 120/150/200ns • Low power consumption - 50mA maximum active current - lOOnAmaximum standby current • Programming and erasing voltage 12V ± 5% • Command register architecture - Byte/Word Programming (50fis typical) - Chip Erase (1 sec typical) - Auto chip erase 30 sec typical (including preprogramming time) - Block Erase (16384 bytes by 32 blocks


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PDF MX28F41OO 288x8/262 144x16 120/150/200ns 50fis 100mA techno94 Q15/A-1 Q13ZZ MX28F4100 PM-0254 MXIc Q0-Q15
1999 - a1334

Abstract: K3N3C1 40DIP600
Text: CONFIGURATION . . . . . . . . A0 A-1 X BUFFERS AND DECORDER MEMORY CELL MATRIX (262, 144x16 / 524,288x8


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PDF K3N3C1000D-D 512Kx8 /256Kx16) K3N3C1000D-DC 40-DIP-600 K3N3C1000D-GC 40-SOP-525 40-DIP-600 015MIN a1334 K3N3C1 40DIP600
1998 - KM23V4100D

Abstract: KM23V4100DET KM23V4100DT 256x16 rom
Text: A0 X BUFFERS AND DECODER MEMORY CELL MATRIX (262, 144x16 / 524,288x8) Y BUFFERS AND


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PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 KM23V4100DET KM23V4100DT 256x16 rom
2000 - K3N3C6000D-DC

Abstract: K3N3C6000D-DC08 mask rom
Text: MATRIX (262, 144x16 ) N.C 38 A16 4 37 A15 Q13 5 36 Q12 BUFFERS 39 A17 3


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PDF K3N3C6000D-DC 256Kx16) 40-DIP-600 K3N3C6000D-DC K3N3C6000D-DC08 K3N3C6000D-DC10 K3N3C6000D-DC12 K3N3C6000D-DC08 mask rom
1999 - KM23V4100D

Abstract: KM23V4100DET KM23V4100DT
Text: A0 X BUFFERS AND DECODER MEMORY CELL MATRIX (262, 144x16 / 524,288x8) Y BUFFERS AND


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PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 KM23V4100DET KM23V4100DT
1999 - 40DIP600

Abstract: 40-DIP-600
Text: MEMORY CELL MATRIX (262, 144x16 / 524,288x8) A17 SENSE AMP. DATA OUT BUFFERS A-1 40 A8


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PDF KM23C4100D 512Kx8 /256Kx16) KM23C4100D 40-DIP-600 KM23C4100DG 40-SOP-525 015MIN 40DIP600 40-DIP-600
1999 - Not Available

Abstract: No abstract text available
Text: , 144x16 / 524,288x8) KM23V4100DT KM23V4100DET Y BUFFERS AND DECODER SENSE AMP. DATA OUT BUFFERS


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PDF KM23V4100D 512Kx8 /256x16) 100ns 120ns 44-TSOP2-400 44-TSOP2-400)
0423-J

Abstract: PM-0254
Text: O M F © ( ^ K M T Û 0 (N ] M MACDOMX. INC. A M X 2 8 F 4 1 O O 4M-BITIS12K x 8/2HBK x 1BJ CMOS FLASH MEMORY FEATURES 524,288x8/262, 144x16 switchable Fast access time: 100/120/150ns Low power consumption - 50mA maximum active current - 100|iA maximum standby current Programming and erasing voltage 12V ± 5% Command register architecture - Byte/Word Programming (50ns typical) - Chip Erase (1 sec typical) - Auto chip erase 30 sec typical (including preprogramming time) - Block


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PDF 4M-BITIS12K 288x8/262 144x16 100/120/150ns A0-A17 Q0-Q14 Q15/A-1 0423-J PM-0254
Supplyframe Tracking Pixel