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LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
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13N50 equivalent Datasheets Context Search

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2010 - 13N50

Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar , . The UTC 13N50 is ideally suitable for high efficiency switch mode power supply, power factor , -362.b 13N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified , 60 210 270 210 56 2 of 6 QW-R502-362.b 13N50 Preliminary Power MOSFET ELECTRICAL


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PDF 13N50 13N50 O-220 O-220F QW-R502-362 13N50 equivalent 13n50g 13N50G-TF1-T 362 MOSFET
2011 - 13n50g

Abstract: 13N50
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 13A, 500V N-CHANNEL POWER MOSFET 1 Power MOSFET TO-220 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe , 13N50 is ideally suitable for high efficiency switch mode power supply, power factor correction , Unisonic Technologies Co., Ltd 1 of 6 QW-R502-362.G 13N50 ABSOLUTE MAXIMUM RATINGS (TC = 25 , QW-R502-362.G 13N50 ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) SYMBOL BVDSS


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PDF 13N50 O-220 13N50 O-220F QW-R502-362 13n50g
2011 - 13N50

Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The , commutation mode conditions. The UTC 13N50 is ideally suitable for high efficiency switch mode power supply , Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube 1 of 6 QW-R502-362.e 13N50 , UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-362.e 13N50 Preliminary Power MOSFET


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PDF 13N50 O-220 13N50 O-220F 20pFat QW-R502-362
Not Available

Abstract: No abstract text available
Text: nixYS IXFH 13N50 IXFM 13N50 V = DSS 500 V HiPerFET ™ Power MOSFET I = 13 A N-Channel E nhancem ent Mode High dv/dt, L o w t , HDMOS™ Family = Ft DS(on) 0.4  , Symbol Test Conditions IXFH 13N50 IXFM 13N50 Characteristic Values (T = 25°C, unless otherwise , ,486,715 5,381,025 □IXYS IXFH 13N50 IXFM 13N50 Vgs Vds — Volts — Volts n) vs , : +49-6206-5030 Fax: +49-6206-503629 □IXYS IXFH 13N50 IXFM 13N50 Fig. 7. Gate Gate Cha rge Fig


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PDF 13N50
2000 - 13N50

Abstract: No abstract text available
Text: conditions, and dimensions. 91524D (10/95) C1 - 138 © 2000 IXYS All rights reserved IXFH 13N50 IXFH 13N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min , ,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 C1 - 139 IXFH 13N50 IXFH 13N50 Fig. 1 , 13N50 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVDSS BV , - Degrees C C1 - 140 © 2000 IXYS All rights reserved IXFH 13N50 IXFH 13N50 Fig.7 Gate


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PDF O-247 O-204 100ms 13N50
2000 - 13N50

Abstract: 1117 MC
Text: . © 2000 IXYS All rights reserved 91524D (10/95) 1-4 IXFH 13N50 IXFH 13N50 Symbol Test , IXFH 13N50 IXFH 13N50 Fig. 1 Output Characteristics 25 VGS=10V TJ = 25°C Fig. 2 Input , 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 15.0 1.2 13N50 1.1 , -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 13N50 IXFH 13N50 Fig.7 Gate Charge Characteristic Curve 10 100 VDS = 250V 9 ID = 6.5A 8 10µs


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PDF O-247 O-204 13N50 1117 MC
2009 - 13N50

Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and , 13N50 is ideally suitable for high efficiency switch mode power supply, power factor correction , Unisonic Technologies Co., Ltd 1 of 6 QW-R502-362.a 13N50 Preliminary Power MOSFET , -362.a 13N50 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST


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PDF 13N50 13N50 QW-R502-362 utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
2000 - 13N50

Abstract: 125OC FIGURE10
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS = 500 = 13 = 0.4 £ 250 ID (cont) RDS(on , profile package · Space savings · High power density 98578 (2/99) 1-4 IXFJ 13N50 Symbol , 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFJ 13N50 25 VGS , ) normalized to 0.5 ID25 value 1.2 15.0 13N50 1.1 BV/VG(th) - Normalized 12.5 ID - Amperes , Degrees C Figure 6. Admittance Curves 3-4 IXFJ 13N50 10 ID = 6.5A 8 10µs IG = 10mA


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PDF 13N50 Figure10. 125OC FIGURE10
2000 - Not Available

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS = 500 = 13 = 0.4 £ 250 ID (cont) RDS(on , €¢ High power density 98578 (2/99) 1-4 IXFJ 13N50 Symbol gfs Test Conditions , ,063,307 5,237,481 5,381,025 2-4 IXFJ 13N50 25 VGS=10V TJ = 25° C 25 8V 7V , value 1.2 15.0 13N50 1.1 BV/VG(th) - Normalized 12.5 ID - Amperes 4 10.0 7.5 , Figure 6. Admittance Curves 3-4 IXFJ 13N50 10 ID = 6.5A 8 10µs IG = 10mA ID -


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PDF 13N50 Figure10.
2000 - Not Available

Abstract: No abstract text available
Text: 13N50 VDSS ID (cont) RDS(on) trr = 500 = 13 = 0.4 £ 250 V A W ns Symbol VDSS VDGR VGS VGSM , rights reserved IXFJ 13N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise , 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 C1 - 143 IXFJ 13N50 25 TJ = 25 , to 0.5 ID25 value 15.0 13N50 Figure 4. RDS(on) normalized to 0.5 ID25 value 1.2 1.1 VGS(th , C1 - 144 © 2000 IXYS All rights reserved IXFJ 13N50 10 9 8 7 VDS = 250V ID = 6.5A IG = 10mA


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PDF 13N50 O-220 Figure10.
2000 - Not Available

Abstract: No abstract text available
Text: © 2000 IXYS All rights reserved 91524D (10/95) 1-4 IXFH 13N50 IXFH 13N50 Symbol Test , IXFH 13N50 IXFH 13N50 Fig. 1 Output Characteristics 25 VGS=10V TJ = 25° C Fig. 2 Input , 13N50 1.1 BV/VG(th) - Normalized 12.5 10.0 7.5 5.0 2.5 0.0 -50 25 TJ - Degrees C , IXFH 13N50 IXFH 13N50 Fig.7 Gate Charge Characteristic Curve 10 100 VDS = 250V 9 ID =


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PDF O-247 O-204
Not Available

Abstract: No abstract text available
Text: □ IXYS HiPerFET™ IXFJ 13N50 V DSS Power MOSFETs ^D (cont) D DS(on) N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol t rr = 500 V = 13 A = 0.4 Q <250 ns , TestConditions IXFJ 13N50 Characteristic Values (Tj = 25°C, unless otherwise specified) min. typ. max , IXYS All rights reserved IXFJ 13N50 V G S - Volts Figure 2. Output Characteristics at 125 , Figure 6. Admittance Curves n ix Y S IXFJ 13N50 o > C J > 25 50 75 100 Gate


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PDF 13N50 25value 13N50
2001 - IXTH12N50A

Abstract: 13N50 1M500
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M 500 V VGS Continuous , power density Low collector capacitance to ground (low EMI) 98823 (05/01) IXTC 13N50 Symbol


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PDF 13N50 ISOPLUS220TM 220TM IXTH12N50A 13N50 1M500
ixys ixfn 55n50

Abstract: 170n10 C1106 c1124 IXFH26N50 c1120 IXFN170N10 IXFN36n60 200N07 s 13n50
Text: 0.12 0.10 IXFH 13N50 IXFH 21N50 IXFH 24N50/.S IXFH 26N50 >- IXFH 30N50 >- IXFH32N50/.S IXFM 13N50


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PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 c1124 IXFH26N50 c1120 IXFN170N10 IXFN36n60 200N07 s 13n50
2010 - 13N50 equivalent

Abstract: 13N50 equivalent of 13N50 3VD499500YL
Text: 3VD499500YL 3VD499500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltageblocking capability; Ø Avalanche Energy Specified; Ø Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; Ø The chips may packaged in TO-220 type and the typical equivalent product is 13N50 ; CHIP TOPOGRAPHY Ø


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PDF 3VD499500YL 3VD499500YL O-220 13N50; 13N50 equivalent 13N50 equivalent of 13N50
2003 - 13N50 equivalent

Abstract: 13N50 IXFH13N50
Text: Power MOSFET IXTC 13N50 ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M 500 V VGS Continuous ±20 V VGSM , sheet for characteristic curves DS98823B(07/03) IXTC 13N50 Symbol Test Conditions


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PDF 13N50 ISOPLUS220TM 728B1 123B1 728B1 065B1 13N50 equivalent 13N50 IXFH13N50
2003 - 13N50

Abstract: IXTH12N50A
Text: Power MOSFET IXTC 13N50 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 M 500 V VGS Continuous ±20 , capacitance to ground (low EMI) DS98823A(01/03) IXTC 13N50 Symbol Test Conditions


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PDF 13N50 ISOPLUS220TM 220TM IXTH12N50A 728B1 13N50
2009 - 13N50

Abstract: VDD25 MTN13N50FP
Text: -220FP (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 13N50 , No. : 8/8 TO-220FP Dimension Marking: Device Name 13N50 Date Code Style: Pin 1


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PDF C405FP MTN13N50FP MTN13N50FP O-220FP UL94V-0 13N50 VDD25
mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 20N60 mosfet 7n80 4500 MOS 4800 mosfet mosfet 4800 circuit
Text: IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 50N20S 58N20 35N30 40N30 40N30S 13N50 21N50 24N50 , 13N50 IXFM 21N50 IXFM 24N50 IXFM 15N60 IXFM 20N60 IXFM 7N80 IXFM 11N80 IXFM 13N80 IXFM 6N90 IXFM 10N90


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PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 20N60 mosfet 7n80 4500 MOS 4800 mosfet mosfet 4800 circuit
13n50

Abstract: IXYS DS 145 MAX1352
Text: gixYS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VD S S = 500 V iD (c o n t) = 13 A \ ^DS(on) <250 ns = ® Symbol VDSS VD G R Vos v GSM ^D 2 5 u 1» Ear dv/dt "d 1j 1 JM s tg 1L Test Conditions Tj =25°Cto150°C T j = 25° C to , K/W A A1 b b2 C C2 D D1 E E1 e H L L1 1 2 Dim. IXFJ 13N50 9 TO-268 9* c , CM. C , ^d(on , 9 6 5 ,0 6 3 ,3 0 7 5,237,481 5 ,3 8 1 ,0 2 5 * " 1H Q 1 nixYS IXFJ 13N50 VDS-Volts Figure


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PDF 13N50 Cto150 T0-220 C1-111 IXYS DS 145 MAX1352
2003 - Not Available

Abstract: No abstract text available
Text: Power MOSFET IXTC 13N50 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 Ω N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous  , ) IXTC 13N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified


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PDF 13N50 ISOPLUS220TM 728B1 123B1 728B1 065B1
2000 - transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
Text: thermal resistance is higher than an equivalent , non-isolated device, what really matter is the total , IXFR 120N20 IXFR 100N25 IXFR 52N30Q IXFR 90N30 IXFR 13N50 IXFR 26N50Q IXFR 32N50Q IXFR 50N50


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PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent MOSFET 1200v 30a MOSFET 1000v 30a 12n60c CS20-22MOF1 30n120d 12N60c MOSFET
13N50

Abstract: C405E3
Text: compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 13N50 CYStek Product , M I 13N50 Date Code 3 G N 2 1 4 O P 3-Lead TO-220AB Plastic


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PDF C405E3 MTN13N50E3 MTN13N50E3 O-220 UL94V-0 13N50 C405E3
IXTM20N60

Abstract: 6n80 IRFP 260 M 75N1 ixtn 44N50 42N20 204 3B IXTH75N10 20n60 IXTN79N20
Text: 0.42 0.42 0.42 100 200 IXFH 35N30 IXFH 40N30 IXFH IXFH IXFH IXFH 13N50 21N50 24N50 26N50 300 , IXFM 42N20 IXFM 50N20 IXFM 35N30 IXFM 40N30 IXFM 13N50 IXFM 21N50 IXFM 24N50 IXFM 15N60 IXFM 20N60 IXFM


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PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 IXTM20N60 6n80 IRFP 260 M 75N1 ixtn 44N50 204 3B IXTH75N10 20n60 IXTN79N20
ixfh13n50

Abstract: No abstract text available
Text: nixYS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH 13N50 VDSS I D (cont) P DS(on) = 500 V = 13 A = 0.4 Q <250 ns Symbol V DSS v DGR Test Conditions ^ ^ =25°Cto 150°C = 25° C to 150° C; RG S= 1 M£2 $8 Maximum Ratings 500 500 120 iv30 13 52 13 18 5 180 -55.+150 150 -55.+150 V V V V A A A mJ V/ns W °C °C °C °C TO-247 AD Vos Continuous Transient Tc =25° C Tc = 25° C, pulse width limited by Tjm T c =25°C Tc =25°C vGSM ^D25 u


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PDF 13N50 O-247 IXFH13N50 ixfh13n50
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