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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

13009 TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor E 13009

Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR D 13009 13009 2 transistor 13009
Text: KSE13008/ 13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 Emitter Base , KSE13008/ 13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN , / 13009 NPN SILICON TRANSISTOR PU (W |. POWER DISSIPATION a so -no iso us ¿or


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PDF KSE13008/13009 KSE13008 KSE13009 transistor E 13009 all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR D 13009 13009 2 transistor 13009
1999 - all transistor 13009

Abstract: transistor 13009 13009 13009 TRANSISTOR equivalent 13009 TRANSISTOR transistor switch 13009 npn 13009 13009 NPN Transistor 13009 H KSE13009
Text: KSE13008/ 13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 , , Duty cycle2% Rev. B ©1999 Fairchild Semiconductor Corporation µs µs µs KSE13008/ 13009 NPN SILICON TRANSISTOR KSE13008/ 13009 NPN SILICON TRANSISTOR TRADEMARKS The following are


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 all transistor 13009 transistor 13009 13009 13009 TRANSISTOR equivalent 13009 TRANSISTOR transistor switch 13009 npn 13009 13009 NPN Transistor 13009 H KSE13009
2001 - *E13009F

Abstract: all transistor 13009 tr 13009 transistor 13009 KSE13009FTU p 13009 13009 cross reference 13009 13009 NPN Transistor kse13009 h2
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · , . A1, January 2001 KSE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Package Demensions TO , Rev. H2 Product Folder - Fairchild P/N KSE13009F - NPN Silicon Transistor Fairchild


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 O-220F KSE13009FTU *E13009F all transistor 13009 tr 13009 transistor 13009 p 13009 13009 cross reference 13009 13009 NPN Transistor kse13009 h2
2001 - transistor 13009

Abstract: kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009 KSE13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · , . A1, January 2001 KSE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Package Demensions TO , Home >> Find products >> KSE13008 NPN Silicon Transistor Contents Features | Applications | Product


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 KSE13009H2 KSE13009H2TU transistor 13009 kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009
13009

Abstract: C2456 p 13009 transistor 13009 C2456 transistor
Text: 60950 (via CB Cert.) Certificate No. NC/011474 File E189690 File E189690 Certificate No. 13009 , . 13009 Certif. No. 13009 Certif. No. 13009 Certif. No. 13009 BABT The information contained in


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PDF C2456 IEC60950 100kHz, 100mVAC, 30KHz, 100kHz UL1950 NC/011474 13009 C2456 p 13009 transistor 13009 C2456 transistor
2001 - 13009

Abstract: tr 13009 13009 H transistor 13009 KSE13009 kse13009 h2 all transistor 13009 p 13009 kse13008 transistor d 13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3 , KSE13008/ 13009 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 100 hFE, DC , VOLTAGE Figure 6. Safe Operating Area Rev. A1, January 2001 KSE13008/ 13009 Typical , Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Package Demensions TO


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 13009 tr 13009 13009 H transistor 13009 KSE13009 kse13009 h2 all transistor 13009 p 13009 kse13008 transistor d 13009
2001 - 13009

Abstract: No abstract text available
Text: .) Certificate No. NC/011474 File E189690 File E189690 Certificate No. 13009 Japan (via CB Cert.) Austel (via CB Cert.) Sweden (via CB Cert.) Norway (via CB Cert.) Certif. No. 13009 Certif. No. 13009 Certif. No. 13009 Certif. No. 13009 BABT The information contained in this drawing is the sole property


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PDF C2456 IEC60950 C2456 100kHz, 100mVAC, 30KHz, 100kHz UL1950 NC/011474 13009
2000 - 13009

Abstract: SWITCHING SYSTEMS INTERNATIONAL Kse13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon , 2000 KSE13008/ 13009 Typical Characteristics ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/ 13009 Typical Characteristics (continued) ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/ 13009 Package Dimensions TO-220 9.90


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 KSE13009 13009 SWITCHING SYSTEMS INTERNATIONAL
2000 - e13009

Abstract: Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3 , cycle2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/ 13009 VBE , . Safe Operating Area Rev. A, February 2000 KSE13008/ 13009 Typical Characteristics (Continued , Semiconductor International Rev. A, February 2000 KSE13008/ 13009 Package Demensions TO-220 4.50


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 e13009 Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
2001 - MJE13008

Abstract: 13009
Text: MJE13008/ 13009 MJE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A1, February 2001 MJE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13008/ 13009 Typical , Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13008/ 13009 Package Demensions TO


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PDF MJE13008/13009 O-220 MJE13008 MJE13009 MJE13008 13009
2001 - mje13008

Abstract: tr 13009 13009 MJE13009 fairchild semiconductor
Text: MJE13008/ 13009 MJE13008/ 13009 High Voltage Switch Mode Applications · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A2, June 2001 MJE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE13008/ 13009 Typical , Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE13008/ 13009 Package Demensions TO


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PDF MJE13008/13009 O-220 MJE13008 MJE13009 mje13008 tr 13009 13009 MJE13009 fairchild semiconductor
2009 - transistor E 13009

Abstract: 13009 H p 13009 transistor d 13009 13009 L all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
Text: ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 1 2 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is


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PDF ST13009 O-220 transistor E 13009 13009 H p 13009 transistor d 13009 13009 L all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
2009 - transistor E 13009 l

Abstract: No abstract text available
Text: ST13009 High voltage fast-switching NPN power transistor Features I Low spread of dynamic parameters I High voltage capability I Minimum lot-to-lot spread for reliable operation I Very high switching speed Applications 1 I 2 3 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is


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PDF ST13009 O-220 transistor E 13009 l
2007 - transistor E 13009

Abstract: 13009 H e 13009 f ST13009 ST-13009 13009 l E 13009 L 13009L transistor d 13009 p 13009
Text: ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications 3 1 2 Switch mode power supplies TO-220 Description The device is manufactured using high voltage multi-epitaxial planar technology for high , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is


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PDF ST13009 O-220 transistor E 13009 13009 H e 13009 f ST13009 ST-13009 13009 l E 13009 L 13009L transistor d 13009 p 13009
CI 13007

Abstract: bud48 13005 A BUD48A BUX 115 13005 ballast BUV-481 BUD98I MJE-13007 BUV 471
Text: * 12 700 400 100 TO 220 MJE 13009 1.5 8 1.6 1 3 *(1) 0.7* (1) 12 850 400 100 TO 220 MJE 13009 A 1.5 8


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PDF ST24C02 TS59C11 TS93C46 M9306 M9346 CI 13007 bud48 13005 A BUD48A BUX 115 13005 ballast BUV-481 BUD98I MJE-13007 BUV 471
transistor E 13009

Abstract: transistor d 13009 n752 E13009 E 13009 E 13009 TRANSISTOR motorola J 13009 - 2 e 13009 p D 13009 K transistor switch 13009
Text: (su s) M JE 1 3 00 8 M J E 13009 'C E V >E80 1 5 1 300 4 00 - Vdc m Adc mAdc *S/b - See , ?254 0GÛ54G5 7 | M JE 13008, M JE 13009 7 ~33 ~ / 3 -, -, F IG U R E 1 - F O R W A R D B IA S , IN G There are tw o limitations on the power handling ability of a transistor : average junction temperature and second breakdown. Safe operating area curves indicate I q - V q e limits of the transistor that m ust be observed for reliable operation; i.e., the transistor m u st not be subjected to greater


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PDF ti3ti725M MJE13008 MJE13009 transistor E 13009 transistor d 13009 n752 E13009 E 13009 E 13009 TRANSISTOR motorola J 13009 - 2 e 13009 p D 13009 K transistor switch 13009
DC power jack SWC

Abstract: SWC DC power jack j 13009 mil-std-1344
Text: M J U b! L F 1-30-09 ECN 51752 TOLERANCE UNLESS OTHERWISE SPECIFIED DECIMALS .XX - .XXX mm MATL


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2013 - Not Available

Abstract: No abstract text available
Text: 13 Neptune Ave. Brooklyn NY 11235 Tel. (718) 934-4500 Fax. (718) 332-4661 Website: www.minicircuits.com PRODUCT CHANGE NOTICE PCN Form (D4-E000-73) PCN# 13-009 NOTIFICATION DATE: October 2013 MODEL(S) AFFECTED: LFTC & HFTC series (Case Style FR933) EXTENT OF CHANGE: Change of height dimension from 0.028” nominal to 0.034” nominal EFFECT OF CHANGE: No change in FORM or FUNCTION. Change is in FIT based on dimension above REASON FOR CHANGE: To account for manufacturing tolerances


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PDF D4-E000-73) FR933) PCN13-009 M135112
2007 - Not Available

Abstract: No abstract text available
Text: ://www.arieselec.com · info@arieselec.com Frenchtown, NJ USA TEL: (908) 996-6841 FAX: (908) 996-3891 abc 13009


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PDF C36000 ASTM-B16-00. SAE-AMSQQ-N-290. C17200 ASTM-B194-01. MIL-G-45204 SAE-AMS-QQ-N-290. XX-0517-90CXX
2007 - XX-0517-90CXX

Abstract: all transistor 13009 ASTM B194 transistor 13009 B545 C17200
Text: : (215) 781-9956 FAX: (215) 781-9845 abc 13009 REV. F PRINTOUTS OF THIS DOCUMENT MAY BE OUT OF


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PDF C36000 ASTM-B16-00. SAE-AMSQQ-N-290. C17200 ASTM-B194-01. MIL-G-45204 SAE-AMS-QQ-N-290. XX-0517-90CXX XX-0517-90CXX all transistor 13009 ASTM B194 transistor 13009 B545
2005 - transistor MJ 13009

Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
Text: HI-SINCERITY Spec. No. : HR200202 Issued Date : 2005.10.01 Revised Date : 2005.10.19 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay , 13009 D B r1 Date Code Control Code Note: Green label is used for pb-free packing 1


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PDF HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
2006 - Not Available

Abstract: No abstract text available
Text: ] unless otherwise specified "A"=NO. OF PINS X .100 [2.54] "B"=(NO. OF PINS - 1) X .100 [2.54] 13009


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PDF C36000 ASTM-B16-00. SAE-AMSQQ-N-290. C17200 ASTM-B194-01. MIL-G-45204 SAE-AMS-QQ-N-290. XX-0517-90CXX
2013 - 13009

Abstract: 13007
Text: 19007-6810 USA TEL 215-781-9956 · FAX 215-781-9845 WWW.ARIESELEC.COM · INFO@ARIESELEC.COM 13009 Rev. 6.1 1


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PDF C36000 B16/B16M-05 AMS-QQ-N-290B C17200 B194-08 MIL-G-45204 AMS-QQ-N290B 13009 13007
2007 - Not Available

Abstract: No abstract text available
Text: ) 781-9845 13009 REV. F PRINTOUTS OF THIS DOCUMENT MAY BE OUT OF DATE AND SHOULD BE CONSIDERED


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PDF C36000 ASTM-B16-00. SAE-AMSQQ-N-290. C17200 ASTM-B194-01. MIL-G-45204 SAE-AMS-QQ-N-290. XX-0517-90CXX
2005 - E 13009

Abstract: transistor MJ 13009 transistor E 13009 e13009 mj 13009 transistor d 13009 D 13009 K tr 13009 J 13009 - 2 j 13009
Text: HI-SINCERITY Spec. No. : HE200206 Issued Date : 2002.02.01 Revised Date : 2005.08.16 Page No. : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch-controls, Solenoid/Relay , MJ E 13009 C D Date Code H M I K 3 G N 2 1 Tab O P


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PDF HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 transistor E 13009 e13009 mj 13009 transistor d 13009 D 13009 K tr 13009 J 13009 - 2 j 13009
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