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13001 S 6D TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
13001 TRANSISTOR

Abstract: c s x 13001 H 06 transistor x 13001 transistor c s x 13001 13001 TO-92 13001 npn transistor 13001 transistor TO-92 13001 transistors 13001 13001 transistor 400v
Text: SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta , =50mA, IB1= -1B2=5mA VCC=45V A 10-15 CD 13001 A TEST CONDITION IC=100µA, IE=0 IC=1mA, IB=0 B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 10 5 , 1.5 D 25-30 E 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F Page 1 of 3 , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack P2 DISTANCE BETWEEN OUTER LEADS COMPONENT


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PDF CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR c s x 13001 H 06 transistor x 13001 transistor c s x 13001 13001 TO-92 13001 npn transistor 13001 transistor TO-92 13001 transistors 13001 13001 transistor 400v
2002 - 13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 13001 transistor 400v c s x 13001 H 06 13001 npn transistors 13001 transistor s 13001 13001 transistor c s x 13001
Text: Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package , 13001 A B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 , 1.5 µs D 25-30 E 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F 8 , G 331 Flat Side of Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions , BEYOND THE EDGE( S ) OF CARRIER TAPE AND THERE SHALL BE NO EXPOSURE OF ADHESIVE. 4. NO MORE THAN 3


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PDF CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR transistor 13001 transistor x 13001 13001 transistor 400v c s x 13001 H 06 13001 npn transistors 13001 transistor s 13001 13001 transistor c s x 13001
13001 TRANSISTOR

Abstract: transistor x 13001 transistor 13001 transistor s 13001 13001 transistor 400v c s 13001 TRANSISTOR transistors 13001 c s x 13001 H 06 13001 A 13001 TO 92
Text: PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta =25ºC , =10mA VCE=20V,IC=20mA,f=1MHz IC=50mA, IB1= -1B2=5mA VCC=45V A 10-15 CD 13001 A B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 MAX UNIT V V V 100 , 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F 8 Page 1 of 3 CD13001 TO , Flat Side of Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless


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PDF ISO/TS16949 CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR transistor x 13001 transistor 13001 transistor s 13001 13001 transistor 400v c s 13001 TRANSISTOR transistors 13001 c s x 13001 H 06 13001 A 13001 TO 92
13001 TRANSISTOR

Abstract: transistor 13001 transistor x 13001 transistor 13001 TO 92 13001 transistor 400v transistors 13001 c s x 13001 H 06 NPN transistor 13001 all transistor 13001 transistor s 13001
Text: SILICON PLANAR EPITAXIAL TRANSISTOR CD13001 TO - 92 Plastic Package ABSOLUTE MAXIMUM RATING (Ta , IC=50mA, IB=10mA VCE=20V,IC=20mA,f=1MHz IC=50mA, IB1= -1B2=5mA VCC=45V A 10-15 CD 13001 A B 15-20 CD 13001 B C 20-25 CD 13001 C Data Sheet MIN 500 400 9 MAX , µs D 25-30 E 30-35 F 35-40 CD 13001 D CD 13001 E CD 13001 F 8 Page 1 , G 331 Flat Side of Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions


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PDF CD13001 C-120 CD13001Rev 080102E 13001 TRANSISTOR transistor 13001 transistor x 13001 transistor 13001 TO 92 13001 transistor 400v transistors 13001 c s x 13001 H 06 NPN transistor 13001 all transistor 13001 transistor s 13001
si 13001 transistor

Abstract: transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR BA13002
Text: ) i ' 7 > 7 ,ÿ ' ï i - K®1OE K it- ;* (T a = 2 5 °C ) Pd B A 13001 1100 X 2 B A 13002 mW S , ,0mW S -¡1*1*« 0 306 ROHm BA13001/B A 13001 F/ BA13002/ BA13002F · f t Ü K f í ^# , i f E l / D i m e n t i o n s (Unit : mm) BA13001, B A 13002, BA13001F, B A 13002F IJ, ¥ - h 5 > ' )> h > i sX 9 T U U - tK = >> v 7 .9 £ 6 [ S S & r t/® L T -fo - r % i f ·£· C < JU 4 ' ¿ r CO f f a t l t t H i t £ ^ea Jixffly-r'T i- ^ - ^ ia s iJ P S S iA


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PDF BA13001 /BA13001F/BA13002/BA13002F BA13001, BA13001F, 13002F BA13002 BA13002F si 13001 transistor transistor x 13002 diagram transistor 13001 transistor di 13001 transistor te 13001 13001 HF transistor x 13001 TRANSISTOR si 13001 13001 TRANSISTOR
2009 - 13001 6.B331

Abstract: lm 13001 13001 s 13001 DS-5560 B 13001 DK51P-13001 lm 5560 13001 A 2 sc 13001
Text: P/N: C- 13-001 -XX-SXXXX/XXX-X-XX 1310nm Laser Diode Module Features l Laser diode with , Note: 1 DS-5560 Rev 0.0 2009-06-02 P/N: C- 13-001 -XX-SXXXX/XXX-X-XX 1310nm Laser Diode Module , Pin 4 : Monitor Diode Anode Packaging Dimensions (Units in mm) Part Number: C- 13-001 , 2009-06-02 P/N: C- 13-001 -XX-SXXXX/XXX-X-XX 1310nm Laser Diode Module Packaging Dimensions (Units in mm) Part Number: C- 13-001 -TX -SSCXX-XX SC TOSA (L&M Power) C- 13-001 -TX-SSCX-XX Optical plane


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PDF C-13-001-XX-SXXXX/XXX-X-XX 1310nm GR-468-CORE DS-5560 13001 6.B331 lm 13001 13001 s 13001 B 13001 DK51P-13001 lm 5560 13001 A 2 sc 13001
2002 - 13001

Abstract: 13001 s tr 13001 13001 A 2 sc 13001 C-13-001-R-SSC s 13001 13001 H h 13001 f
Text: 1310 nm Laser Diode Modules C- 13-001 -X-SXXL/M/H Features · Laser diode with multiple quantum , OPTION Model C- 13-001 -R-SFCL/ M/ H C- 13-001 -R-SSTL/ M/ H C- 13-001 -R-SSCL/ M/ H C- 13-001 -P-SFCL/ M/ H C- 13-001 -P-SSTL/ M/ H C- 13-001 -P-SSCL/ M/ H C- 13-001 -P-SL/ M/ H Package Fiber Receptacle , =5V, f=1MHz 1310 nm Laser Diode Modules C- 13-001 -X-SXXL/M/H LD Pin Assignment LD Modules-receptacle (Note: Pin assignment can be customized) Pin Pin Pin Pin FC Receptacle C- 13-001


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PDF C-13-001-X-SXXL/M/H 25such LUMNDS076-0302 13001 13001 s tr 13001 13001 A 2 sc 13001 C-13-001-R-SSC s 13001 13001 H h 13001 f
X 13001

Abstract: 2 sc 13001 SD 13001 Q 13001 E 13001 d 13001 c s x 13001 H 08 855135014 13001 T 5 13001 SD
Text: 10 NOT E S : CIRCUIT 1 1- MATERIAL: -HOUSING:LCP GLASS FILLED UL 94-V O . COLOUR BLACK , PALLADIUM NICKEL EXCEEDS PRODUCT REQUIREMENTS BASED ON P S -8 5 5 1 3 -0 0 2 2 - JACK FOR MATING WITH IEC 6 0 6 0 3 -7 AND T IA -1 0 9 6 -A PLUGS (MOLEX 90 0 7 5 SERIES). 3 - PRODUCT SPECIFICATION: P S -8 5 5 , - MANUFACTURING I.D CAN BE EITHER MXF.MG OR MXI. -1 5 .0 8 - © 10- APPLICATION SPEC A S -8 , © DIMENSION S T Y L E DESIG N UNITS -2 .4 0 *0.35 2 .0 0 * 0 .3 5 - ISOMETRIC VIEW (NOT SCALED


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PDF SD-85513-010 X 13001 2 sc 13001 SD 13001 Q 13001 E 13001 d 13001 c s x 13001 H 08 855135014 13001 T 5 13001 SD
2003 - C-13-001-XX-SXXXX

Abstract: tr 13001 C-13-001-RX-SXXXX 13001 K/SP 13001 13001 s
Text: 1310nm Laser Diode Module C- 13-001 -T/R/PX-SXXXX/XXX-X Features · Laser diode with , Module C- 13-001 -T/R/PX-SXXXX/XXX-X Ordering Information C- 13-001 -XX-SXXXX/XXX-X Connector FC/ST , : 886.3.5169213 2 LUMNDS525-MAR2904 rev. A.0 1310nm Laser Diode Module C- 13-001 -T/R/PX-SXXXX/XXX-X Packaging Dimensions LD Module-Receptacle LUMINENTOIC.COM Part Number: C- 13-001 -RX-SXXXX 20550 , rev. A.0 1310nm Laser Diode Module C- 13-001 -T/R/PX-SXXXX/XXX-X Packaging Dimensions LD


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PDF 1310nm C-13-001-T/R/PX-SXXXX/XXX-X TA-NWT-0009853 LUMNDS525-MAR2904 C-13-001-XX-SXXXX tr 13001 C-13-001-RX-SXXXX 13001 K/SP 13001 13001 s
2006 - 13001

Abstract: C-13-001-RX-SXXXX
Text: 1310nm Laser Diode Module C- 13-001 -XX-SXXXX/XXX-X-XX Features · Laser diode with , : 886.3.5169213 LUMNDS525-JAN2506 rev. A.2 1 1310nm Laser Diode Module C- 13-001 -XX-SXXXX/XXX-X-XX LD , Case Gnd Laser Cathode Monitor Diode Anode Packaging Dimension Units in mm. Part Number: C- 13-001 , 1310nm Laser Diode Module C- 13-001 -XX-SXXXX/XXX-X-XX Packaging Dimension Units in mm. Part Number: C- 13-001 -TX-SSCXX-XX Optical plane Optical plane Optical plane


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PDF 1310nm C-13-001-XX-SXXXX/XXX-X-XX GR-468-CORE LUMNDS525-JAN2506 13001 C-13-001-RX-SXXXX
2003 - High Voltage 13001

Abstract: tr 13001 X 13001 13001 C-13-001-E-HG-G5 LuminentOIC tr x 13001
Text: 1310nm Laser Diode C- 13-001 -E-XG Features · Uncooled laser diode with MQW structure · 5mW CW , . 0.1 1310nm Laser Diode C- 13-001 -E-XG Mechanical Drawing Flat window cap LUMINENTOIC.COM , . 0.1 1310nm Laser Diode C- 13-001 -E-XG Ball lens cap LUMINENTOIC.COM 20550 Nordhoff St. · , C- 13-001 -E-XG Low profile flat window cap LUMINENTOIC.COM 20550 Nordhoff St. · Chatsworth , tel: 886.3.5169222 · fax: 886.3.5169213 4 LUMNDS863-AUG1805 rev. 0.1 1310nm Laser Diode C- 13-001


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PDF 1310nm C-13-001-E-XG GR-468-CORE LUMNDS863-AUG1805 High Voltage 13001 tr 13001 X 13001 13001 C-13-001-E-HG-G5 LuminentOIC tr x 13001
transistor x 13001

Abstract: c s 13001 TRANSISTOR transistor c s x 13001 BA13002 all transistor 13001 diagram transistor 13001 transistor s 13001 c s x 13001 H 06 BA13002F 13001F
Text: The BA13001, BA13001F, BA13002, and BA13002F are large current transistor arrays with 6 Darlington transistor circ u its bu ilt-in . The necessary surge absorbing diodes and base current control resistors are , Symbol Vcc VcEO lo Vi Vi ( s t b ) Limits 10 - 0 . 5 ~ + 20 320 - 2 5 - + 20 20 20 320 BA13001F 500 * 1 BA13002F Unit V V mA V V V mA V r (D ) If (D ) Power Dissipation Pd B A 13001 1100 * 2 , Cycle S 20% Duty Cycle S 40% 2.4 0 0.2 BA13001/BA13001F 7 " H" Input Voltage " L" Input


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PDF BA13001 13001F/BA13002/BA13002F BA13001, BA13001F, BA13002, BA13002F 320mA, BA13002) transistor x 13001 c s 13001 TRANSISTOR transistor c s x 13001 BA13002 all transistor 13001 diagram transistor 13001 transistor s 13001 c s x 13001 H 06 13001F
2003 - eb 13001

Abstract: High Voltage 13001 13001 C-13-001-E-BD tr 13001 13001 s C-13-001-E-A B 13001 C-13-001-E-BB 13001 model
Text: 1310nm Laser Diodes C- 13-001 -E-XX Features · Uncooled laser diode with MQW structure · 5mW CW , wavelength is available for WDM application 1 1310nm Laser Diodes C- 13-001 -E-XX Mechanical Drawing C- 13-001 -E-A C- 13-001 -E-AB C- 13-001 -E-AD C- 13-001 -E-B C- 13-001 -E-BB C- 13-001 -E-BD LD Pin , C- 13-001 -E-XX Warnings Handling Precautions: This device is susceptible to damage as a result of , that the product( s ) described herein are free from patent, copyright, or intellectual property rights


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PDF 1310nm C-13-001-E-XX TA-NWT-000983 LUMNDS504-0703 eb 13001 High Voltage 13001 13001 C-13-001-E-BD tr 13001 13001 s C-13-001-E-A B 13001 C-13-001-E-BB 13001 model
2002 - eb 13001

Abstract: C-13-001-E-X High Voltage 13001 13001 s 13001 001-EA diode C-15-001-E-X C-15-001-E-A C-13-001-E-B C-13-001-E-A
Text: 1310 nm, 1550 nm Laser Diodes C- 13-001 -E-X · C-15-001-E-X Features · Uncooled laser diode with , Ratings (Tc = 25°C) Parameter Symbol Value Optical Output Power C- 13-001 -E-X Po 10 (CW) C-15-001-E-X Po 6 (CW) LD Reverse Voltage Vrld 2 PD Reverse Voltage Vrpd 10 PD Forward Current Ifpd C- 13-001 , Optical and Electrical Characteristics (Tc = 25°C) Parameter Min Symbol Slope Efficiency C- 13-001 -E-A 0.3 SE C- 13-001 -E-B 0.2 SE C-15-001-E-A 0.2 SE C-15-001-E-B 0.15 SE Threshold Current Ith


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PDF C-13-001-E-X C-15-001-E-X TA-NWT-000983 LUMNDS004-0402 eb 13001 C-13-001-E-X High Voltage 13001 13001 s 13001 001-EA diode C-15-001-E-X C-15-001-E-A C-13-001-E-B C-13-001-E-A
PA 13001

Abstract: 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 13001 s 60 RS 13001 Rmw46 256KX16 HA 13001
Text: 1 3 38 1/02 1 4 37 1/03 1 5 36 Vcc 1 6 35 1/04 1 7 o M ÍO 34 1/05 1- 8 33 1/06 1 9 S 32 , 1/04 1= 7 o 38 =1 I/Oll 1/05 1= 8 M co 37 I/OIO 1/06 1= 9 S 36 =1 I/09 1/07 1= 10 co Ln c\j O , 1= 22 23 =1 GND Pin designation Pin ( s ) Description AO to A8 Address inputs RM Row address , ALLIANCE SEMICONDUCTOR DID I 1-3001 I. I I/2V98 This Material Copyrighted By Its Respective Manufacturer , A0-A8 = VCC-0.2V DQ0-DQ15 = VCC-0.2V, 0.2V are open 200 200 |XA DID I 1-3001 I. 11/23/98 ALLIANCE


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PDF AS4VC256K16E0 256KX16 40-pin 40/44-pin AS4VC256K1Ã AS4VC256K16E0-45JC AS4VC256K16E0-60JC AS4VC256K16E0-45TC PA 13001 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 13001 s 60 RS 13001 Rmw46 HA 13001
2007 - 13001 s bd

Abstract: BD 13001 High Voltage 13001 GR-468-CORE SE 03 TO56 13001 s E 13001 13001
Text: P/N: C- 13-001 -E-XX 1310nm Laser Diodes Features Uncooled laser diode with MQW structure 5mW , 1.5 V CW,Po=5mW DS-5669 JUN1609-Rev 00 P/N: C- 13-001 -E-XX 1310nm Laser Diodes Beam , -5669 JUN1609-Rev 00 P/N: C- 13-001 -E-XX 1310nm Laser Diodes Mechanical Drawing Flat window Cap Ball , DS-5669 JUN1609-Rev 00 P/N: C- 13-001 -E-XX 1310nm Laser Diodes Order Information Available Options: C- 13-001 -E-XX C- 13-001 -E-XX-G5 C- 13-001 -E-XX-GR Note: XX=A,AB,AD,B,BB,BD C - 13 -


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PDF C-13-001-E-XX 1310nm GR-468-CORE DS-5669 JUN1609-Rev 13001 s bd BD 13001 High Voltage 13001 GR-468-CORE SE 03 TO56 13001 s E 13001 13001
YH 13001

Abstract: SP 13001
Text: 30 - ns ALLIANCE SEMICONDUCTOR U n it N o te s DID I 1-3001 I. I I/2 V 9 8 , Advance information ■■A S4V C256K16E0 II 2.5V 2 5 6 K X 16 C M O S DRAM (EDO) Features • 5 1 2 re fre s h c y c le s , 8 m s re fre s h in te rv a l • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its - R A S -only o r C A S-before-R A S re fre s h o r se lf re fre s h • H ig h sp e e d - 4 5 / 6 0 n s RAS access tim e • R e a d -m o d ify -w rite - 2 0 / 2


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PDF C256K16E0 40-pin AS4VC256K16E0-45JC AS4VC256K16E0-60JC AS4VC256K16E0-45TC AS4VC256K16E0-60TC 256K16E0 YH 13001 SP 13001
2008 - CS 13001

Abstract: free circuit diagram for 13001 c s x 13001 H 08 transistor di 13001 onsemi marking SK transistor 13001 transistors 13001 AEC-Q100 CAT130019SWI-GT3 all transistor 13001
Text: Device # Suffix 13001 9 S W I - G T3 Lead Finish G: NiPdAu (PPF) Company ID , 6 ORG 13001 1-Kbit 5 GND 13004 4-Kbit 13008 8-Kbit 13016 16 , . Characteristics subject to change without notice M 4.00V J 3.08V T 2.93V S 2.63V R , +25ºC and VCC = 5V for L/M/J versions, VCC = 3.3V for T/ S versions, VCC = 3V for R version and VCC = 2.5V for Z version. Symbol Parameter Reset Threshold Voltage VTH Threshold L M J T S R


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PDF CAT130xx CAT130xx MD-1121, CS 13001 free circuit diagram for 13001 c s x 13001 H 08 transistor di 13001 onsemi marking SK transistor 13001 transistors 13001 AEC-Q100 CAT130019SWI-GT3 all transistor 13001
2007 - CS 13001

Abstract: transistor di 13001 transistor 13001 transistor 13001 datasheet CAT13001 13001 datasheet transistors 13001 AEC-Q100 CAT130019SWI-GT3 c s x 13001 H 08
Text: 6 ORG 13001 1-Kbit 5 GND 13004 4-Kbit 13008 8-Kbit 13016 16 , . Characteristics subject to change without notice M 4.00V J 3.08V T 2.93V S 2.63V R , 5V for L/M/J versions, VCC = 3.3V for T/ S versions, VCC = 3V for R version and VCC = 2.5V for Z version. Symbol Parameter Reset Threshold Voltage VTH Threshold L M J T S R Z Symbol , 460 VCC = VTH min, ISINK = 1.2 mA R/ S /T/Z VCC = VTH min, ISINK = 3.2 mA J/L/M 0.4 ms


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PDF CAT130xx CAT130xx CS 13001 transistor di 13001 transistor 13001 transistor 13001 datasheet CAT13001 13001 datasheet transistors 13001 AEC-Q100 CAT130019SWI-GT3 c s x 13001 H 08
2003 - High Voltage 13001

Abstract: No abstract text available
Text: 1310nm Laser Diode C- 13-001 -E-LAX Features · Uncooled laser diode with MQW structure · 5mW CW operation at ­40 to +85ºC · High temperature operation without active cooling · Hermetically sealed active , LUMNDS862-AUG1805 rev. A.0 1310nm Laser Diode C- 13-001 -E-LAX Mechanical Drawing LD Pin Assignment Model , C- 13-001 -E-LAX Ordering Information Available Options: C- 13-001 -E-LAX C- 13-001 -E-LAX-G5 C- 13-001 , right, and LuminentOIC makes no representations or warranties that the product( s ) described herein are


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PDF 1310nm C-13-001-E-LAX GR-468-CORE LUMNDS862-AUG1805 High Voltage 13001
2008 - free circuit diagram for 13001

Abstract: CS 13001 c s x 13001 H 08
Text: Prefix CAT Device # Suffix 13001 9 S W I G T3 Lead Finish G: NiPdAu (PPF) Company ID Temperature Range , GND MEMORY SIZE SELECTOR Product 13001 13004 13008 13016 Memory density 1-Kbit 4-Kbit 8-Kbit 16 , L M J T S R Z Note: When the ORG pin is connected to VCC, the x16 organization is selected. When , for T/ S versions, VCC = 3V for R version and VCC = 2.5V for Z version. Symbol VTH Parameter Reset Threshold Voltage Threshold L M J T S R Z Conditions TA = +25ºC TA = -40ºC to +85ºC TA = +25ºC TA = -40ºC to


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PDF CAT130xx MD-1121, free circuit diagram for 13001 CS 13001 c s x 13001 H 08
2003 - 13001 s bd

Abstract: BD 13001 High Voltage 13001 .model 13001
Text: 1310nm Laser Diodes C- 13-001 -E-XX Features · Uncooled laser diode with MQW structure · 5mW CW operation at ­40 to +85ºC · High temperature operation without active cooling · Hermetically sealed active , C- 13-001 -E-XX Mechanical Drawing Flat window Cap Ball Lens Cap LD Pin Assignment Model , C- 13-001 -E-XX Ordering Information Available Options: C- 13-001 -E-XX C- 13-001 -E-XX-G5 C- 13-001 , product( s ) described herein are free from patent, copyright, or intellectual property rights. Products


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PDF 1310nm C-13-001-E-XX GR-468-CORE LUMNDS504-AUG1805 13001 s bd BD 13001 High Voltage 13001 .model 13001
2008 - 13001b

Abstract: 13001 application notes w 13001 LED 850nm LED 1310nm fiber coupled LED 850nm
Text: P/N: C-08/ 13-001 -B-NSTL-01-XX 4 850nm Emitting (LED), 1310nm Receiving (PIN), Bi-directional , Nov0708-Rev A.1 P/N: C-08/ 13-001 -B-NSTL-01-XX 4 850nm Emitting (LED), 1310nm Receiving (PIN , -08/ 13-001 -B-NSTL-01-XX 4 850nm Emitting (LED), 1310nm Receiving (PIN), Bi-directional Diplexer Module Ordering Information C-08/ 13-001 -B-NSTL-01-XX 850nm Transmitter 1310nm Receiver Package B=BOSA , compliant product (no exemption) 3 DS1884 Nov0708-Rev A.1 P/N: C-08/ 13-001 -B-NSTL-01-XX 4 850nm


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PDF C-08/13-001-B-NSTL-01-XX 850nm 1310nm 5/125m DS1884 Nov0708-Rev 13001b 13001 application notes w 13001 LED 850nm LED 1310nm fiber coupled LED 850nm
EIA-364-13

Abstract: EIA-364-31 FLE-130-01-G-DV-A FTSH-130-02-L-DV-A LC2500 EIA-364-04 tr 13001 EIA-364-20 TC0427-0466
Text: Part #: FLE- 130-01 -G-DV-A Product Rev: NA Lot #: 262282 Part description: Low Profile Socket , Completed: 3/28/2005 DVT PART DESCRIPTION FLE- 130-01 -G-DV-A Mated with FTSH-130-02-L-DV-A Tracking Code: TC0447-0556 Part #: FLE- 130-01 -G-DV-A Part description: Low Profile Socket Strip , Test PCBs used: 100-169-TST-1A Tracking Code: TC0447-0556 Part #: FLE- 130-01 -G-DV-A Part , : TC0447-0556 Part #: FLE- 130-01 -G-DV-A Part description: Low Profile Socket Strip FLOWCHARTS TEST


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PDF TC0447--0556 FLE-130-01-G-DV-A FTSH-130-02-L-DV-A 10012-l thOV-03 THC-01 SM-8-7800 EIA-364-13 EIA-364-31 FLE-130-01-G-DV-A FTSH-130-02-L-DV-A LC2500 EIA-364-04 tr 13001 EIA-364-20 TC0427-0466
1998 - MHB 192

Abstract: No abstract text available
Text: I QUALIFICATION TESTING PART NUMBER SQT- 130-01 -L-Q SAMTEC CORPORATION -. *. .A-. z, '. ; .-,: , ./, . s ., /_ , . , _ .;. I . '- : ,: ,' I. , _- . :. . . ; .i' . ,. 67 MECHANIC STREET , NUMBER SQT- 130-01 -L-Q SAMTEC CORPORATION APPROVED BY: LUANNE E.WITT PROGRAM MANAGER CONTECH RESEARCH , , Inc. a) 2. SQT- 130-01 -L-Q Unless otherwise indicated, all materials were certified by the , MHz) VSWR (500 MHz) CROSSTALK (500 MHz) G/ S / S /G ATTENUATION (500 MHz) PROP. DELAY (500 PS) ~25.0 m1


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PDF SQT-130-01-L-Q TMM-120-01 MHB 192
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