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STELLARIS-3P-CMXSI-MICRONET-STACK Texas Instruments CMX-MicroNet
BEMICRONIO-2-PROCSDK-REF Texas Instruments Altera/Arrow BeMicro Nios II Processor SDK with DP83848 in USB Stick Format

13-micron Datasheets Context Search

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2005 - DDR333

Abstract: micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
Text: TN-46-13 DDR SDRAM DDR SDRAM DDR SDRAM Micron Micron DDR Micron JEDEC Micron , ) Micron DDR SDRAM DDR333 DDR400 DDR333 1 333 M / 167 MHz DDR400 200 MHz DDR200 2 Micron AC Micron tRFC tXSNR tREFI tREFC


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PDF TN-46-13 MT46V64M8) DDR200 DDR266 DDR333 DDR400 09005aef81c057dd/Source: DDR333 micron ddr TN-46-13 DDR400 DDR200 DDR266 MT46V64M8
2009 - E33-DW1

Abstract: PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron
Text: word × I/O Micron PD48288209FF-E25-DW1-A Micron MT49H32M9BM-25 PD48288209FF-E33-DW1 Micron MT49H32M9FM-33 PD48288209FF-E33-DW1-A Micron MT49H32M9BM-33 PD48288209FF-E50-DW1 Micron MT49H32M9FM-5 PD48288209FF-E50-DW1-A Micron MT49H32M9BM-5 PD48288209FF-EF25-DW1 Micron MT49H32M9FM-25 PD48288209FF-EF25-DW1-A Micron MT49H32M9BM-25 PD48288209FF-EF33-DW1 Micron MT49H32M9FM-33 PD48288209FF-EF33-DW1-A Micron MT49H32M9BM-33 PD48288209FF-EF50-DW1


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PDF M19702JJ1V0IF001 M19702JJ1V0IF PD48288236 PD48288218 PD48288209 PD48288118 PD48288209, PD48288118 E33-DW1 PD48288236FF-EF25-DW1-A MT49H16M18CFM-25 micron
2009 - MT29F8G08ABABA

Abstract: MT29F8G08ab MT29F8G08ABAB
Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash , Rev. E 7/13 EN Note: 1 1. The ONFI 2.1 specification is available at www.onfi.org. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2009 Micron , by Micron without notice. Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features Part Numbering Information Micron NAND Flash devices are available in different configurations


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PDF MT29F8G08ABABA, MT29F8G08ABCBB 48-pin 100-ball 09005aef8386131b MT29F8G08ABABA MT29F8G08ab MT29F8G08ABAB
2011 - M25P16 application note

Abstract: No abstract text available
Text: Micron M25P16 Serial Flash Embedded Memory Features Micron M25P16 Serial Flash Embedded Memory , specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Micron M25P16 Serial Flash Embedded Memory Features Contents Functional , . 52 PDF: 09005aef8456656c m25p16.pdf - Rev. G 1/13 EN 2 Micron Technology, Inc. reserves


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PDF M25P16 512Kb 2015h) 09005aef8456656c M25P16 application note
2012 - Not Available

Abstract: No abstract text available
Text: -1S1AA, MTFDEAK200MAS-1S1AA, MTFDEAK400MAS-1S1AA Features · · · · Micron ® 25nm MLC NAND Flash RoHS-compliant package , Warranty: Contact your Micron sales representative for further information regarding the product, including , and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron , Information Micron 's P410m SSD is available in different configurations and densities. Visit www.micron.com


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PDF P410m MTFDEAK100MAS-1S1AA, MTFDEAK200MAS-1S1AA, MTFDEAK400MAS-1S1AA 512-byte 128-entry 100GB 09005aef84be6ef8
MT5C2564d

Abstract: 5c2564
Text: ,536 x 4 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron , high-speed memory applications, Micron offers chip enable (CE) with all organizations. This enhancement can , . 1-81 Micron Semiconductor, Inc., reserves the right to change producís or specifications without notice. ©1933, Micron Semiconductor, Inc. M I C R O NS E M I C O N D U C T O RI N C MICRON I IIU M U , 1-82 Micron Semiconductor, Inc. reserves the nght to change products or specifications without


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PDF MT5C2564 24-Pin MT5C2564d 5c2564
2011 - MT29F4G08ABA

Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP Features , Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP (TI OMAP) MCP Features Part Numbering Information Micron NAND Flash and LPDRAM devices are


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PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
2011 - Not Available

Abstract: No abstract text available
Text: ) MTFDCAE002SAJ, MTFDCAE004SAJ, MTFDCAE008SAJ, MTFDCAE016SAJ, Features · Micron ® NAND Flash · Interface , less. Warranty: Contact your Micron sales representative for further information regarding the , EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Embedded USB Mass Storage Drive (e230) Features


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PDF MTFDCAE002SAJ, MTFDCAE004SAJ, MTFDCAE008SAJ, MTFDCAE016SAJ, and16GB) 09005aef84053f80
2013 - 32GB eMMC

Abstract: micron eMMC 5.0 MTFC8GLDEA-4M IT micron emmc application note BGA 221 eMMC emmc bga 162 emmc jedec emmc 4.41 firmware operation emmc 5.0 micron 169 ball eMMC memory
Text: Micron Confidential and Proprietary 4GB, 8GB, 16GB, 32GB, 64GB: e·MMC Features e·MMCâ , Features Figure 1: Micron e·MMC Device • MultiMediaCard (MMC) controller and NAND Flash • 153 , €¢ ECC and block management implemented 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. Micron


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PDF MTFC16GJDEC-4M MTFC32GJDED-4M MTFC64GJDDN-4M 169-ball 09005aef8523ca91 4gb-64gb 441-it 32GB eMMC micron eMMC 5.0 MTFC8GLDEA-4M IT micron emmc application note BGA 221 eMMC emmc bga 162 emmc jedec emmc 4.41 firmware operation emmc 5.0 micron 169 ball eMMC memory
MT5C1008

Abstract: ET 2314 J937
Text: quality as those used for Micron 's MIL-STD-883C qualified product. The screening steps pro vide high , Die size: 241 x 544 mil 6,121 x 13,818 |im See Bond Pad Location and Identification Table. The Micron SRAM family employs high-speed, lowpower CMOS designs using a four-transistor memory cell. Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. Micron SRAMs are , , Inc., reserves me right to change products or specifications without notice. ©1992, Micron


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PDF MT5C1008 128Kx ET 2314 J937
S01a

Abstract: No abstract text available
Text: MICRON S E M I C O N D U C T O R INC b7E » H t l l l S H R D O Q ^ fi ñ 7üb B H M R N MICRON SEViCONOUCTOa i*c. 1 MEG SRAM DIE S 0 1 A SRAM DIE FEATURES · High speed: 20,25,35 , b42 WÊ HRN MICRON s e m c o n o u c t o r inc . S01A 1 MEG SRAM DIE KNOWN GOOD DIE (C3) In order to provide the customer with fully warranted die product, Micron has developed a Known Good , packaged product. Micron 's KGDP 1 `B ~ process allows Micron to fully test and bum -in die product after it


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PDF MT5C1001 MT5C1005S01A MT5C1008S01A S01a
3SB140

Abstract: No abstract text available
Text: QUALITY LEVEL SPEED' 2 5 o o 47 1 Z 1 2 r MT5C1008XDM2-25 26 Micron 's Military , ,818 urn See Bond Pad Location and Identification Table. The Micron SRAM family employs high-speed, lowpower CMOS designs using a four-transistor memory cell. Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. Micron SRAMs are manufactured and quality controlled in the , 673 W ÊURN MT5C1008 DIE 128K x 8 SRAM T -4 6 -2 3 -1 4 ( MICRON FUNCTIONAL BLOCK DIAGRAM Vcc GND


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PDF MT5C1008 128Kx MIL-STD-883. MT5C1008DIE 3SB140
2013 - IEEE1667

Abstract: Micron TLC sata power devslp
Text: , MTFDDAK240MAV, MTFDDAK480MAV, MTFDDAK960MAV Features · · · · · · Micron ® 20nm MLC NAND Flash RoHS-compliant , less. 6. Drive on-board sensor temperature. · · · · · · · · · · · · Warranty: Contact your Micron , subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M500 2.5-Inch NAND Flash SSD Features Part Numbering Information Micron 's M500 SSD is available in different


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PDF MTFDDAK120MAV, MTFDDAK240MAV, MTFDDAK480MAV, MTFDDAK960MAV AES-256 512-byte 32-command 09005aef84fed121 IEEE1667 Micron TLC sata power devslp
2005 - TN-47-16

Abstract: DDR2 256MX16 DDR2 DIMM JEDEC TN47 DDR2-800 DDR2-667 47-16 l7 Micron 4g DDR2-800 MICRON
Text: : 09005aef81853d66 TN47_16.fm - Rev. A 5/05 EN 1 Micron Technology, Inc. ©2005 Micron Technology, Inc. All rights reserved. Micron Micron Micron TN , PDF 09005aef81853d0a/Source: 09005aef81853d66 TN47_16.fm - Rev. A 5/05 EN 2 Micron Technology, Inc. ©2005 Micron Technology, Inc. All rights reserved. TN-47-16: DDR2 2 , : 09005aef81853d66 TN47_16.fm - Rev. A 5/05 EN 3 Micron Technology, Inc. ©2005 Micron Technology, Inc


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PDF TN-47-16: 09005aef81853d0a/Source: 09005aef81853d66 TN-47-08 TN-47-16 DDR2 256MX16 DDR2 DIMM JEDEC TN47 DDR2-800 DDR2-667 47-16 l7 Micron 4g DDR2-800 MICRON
2011 - M25P application note

Abstract: No abstract text available
Text: Micron M25P40 Serial Flash Embedded Memory Features Micron M25P40 Serial Flash Embedded Memory , Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Micron M25P40 Serial Flash Embedded Memory Features Contents , . 55 PDF: 09005aef8456654f m25p40.pdf - Rev. Z 1/13 EN 2 Micron Technology, Inc. reserves


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PDF M25P40 512Kb 2013h) 16-byte 09005aef8456654f M25P application note
MT5C1001DJ-20

Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b?E J > WÊ b l l l S 4 t i OOQ'iEBb ÖT3 URN MICRON SEM , using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron SRAMs are , memory applications, Micron offers chip enable (CE) capability. This enhance ment can place the outputs , are fully TTL-compatible. 1-31 Micron Semiconductor, inc., reseives the right to change products or specifications without notice. ©1993, Micron Semiconductor, irvc. MICRON SEMICONDUCTOR INC


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PDF MT5C1001 28-Pin MT5C1001DJ-20
1999 - MT48LCM32B2

Abstract: MT48LC2M3B2
Text: revision J. Contact Micron for availability. Marking 2M32B2 TG P B5 -5 -552 -6A3 -62 -72 None IT AT4 :G , Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology, Inc. All rights reserved. 64Mb: x32 SDRAM Features Table 2 , : www.micron.com/decoder. PDF: 09005aef811ce1fe 64mb_x32_sdram.pdf - Rev. T 04/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 1999 Micron Technology


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PDF MT48LC2M32B2 PC100-compliant 4096-cycle 09005aef811ce1fe MT48LCM32B2 MT48LC2M3B2
2009 - DDQ15

Abstract: PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM
Text: word × I/O Micron PD48288209FF-E25-DW1-A Micron MT49H32M9BM-25 PD48288209FF-E33-DW1 Micron MT49H32M9FM-33 PD48288209FF-E33-DW1-A Micron MT49H32M9BM-33 PD48288209FF-E50-DW1 Micron MT49H32M9FM-5 PD48288209FF-E50-DW1-A Micron MT49H32M9BM-5 PD48288209FF-EF25-DW1 Micron MT49H32M9FM-25 PD48288209FF-EF25-DW1-A Micron MT49H32M9BM-25 PD48288209FF-EF33-DW1 Micron MT49H32M9FM-33 PD48288209FF-EF33-DW1-A Micron MT49H32M9BM-33 PD48288209FF-EF50-DW1


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PDF M19702JJ1V0IF001 M19702JJ1V0IF DDQ15 PD48288236FF-EF25-DW1-A MT49H16M18BM-25 MT49H16M18FM-25 PD48288236FF-E33-DW1-A MT49H16M18CBM-33 PD48288236 M18801E MT49H16M18FM
MT5C1189

Abstract: cc1179
Text: MICRON SEMICONDU CTOR INC b?E D blllSHT ODQ'iaññ GfiS MRN M IC R O N B 5E.M ICOM , high-speed, low-power CMOS process. Micron SRAMs are fabricated using double layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Micron offers chip enable (CE) and , and outputs are fully TTL-compatible. 1-191 Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. ©1903, Micron Semiconductor, Inc. MICRON


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PDF T5C1189 128KX 32-Pin MT5C1189 \21V2, MTSC1189 cc1179
2013 - M58BW16FB

Abstract: M58BW32FT M58BW32FB V/B/512
Text: to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M58BW16F , Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification , m58bw_16-32f.pdf - Rev. A 1/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M58BW16F


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PDF M58BW16F, M58BW32F M58BW32F M58BW16F 09005aef8457ee46 16-32f M58BW16FB M58BW32FT M58BW32FB V/B/512
2013 - Not Available

Abstract: No abstract text available
Text: Micron M25PX64 Serial Flash Embedded Memory Features Micron M25PX64 Serial Flash Embedded Memory , change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. Micron M25PX64 Serial , . 56 PDF: 09005aef845665ac m25px64.pdf - Rev. B 3/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All


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PDF M25PX64 75MHz 150MHz 09005aef845665ac
2011 - NAND Flash DIE

Abstract: TMM10 "electrical connector"
Text: -1N2/1N2IT MTEDCAE008SAJ-1N2/1N2IT, MTEDCAE016SAJ-1N2/1N2IT Features · Micron ® NAND Flash · Interface , capacity is less. Warranty: Contact your Micron sales representative for further information regarding , . D 4/13 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Embedded USB Mass Storage Drive (e230


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PDF MTEDCAR002SAJ-1M2/1M2IT, MTEDCAR004SAJ-1N2/1N2IT MTEDCAR008SAJ-1N2/1N2IT, MTEDCAR016SAJ-1N2/1N2IT MTEDCBR002SAJ-1M2/1M2IT, MTEDCBR004SAJ-1N2/1N2IT MTEDCBR008SAJ-1N2/1N2IT, MTEDCBR016SAJ-1N2/1N2IT MTEDCBE002SAJ-1M2/1M2IT, MTEDCBE004SAJ-1N2/1N2IT NAND Flash DIE TMM10 "electrical connector"
MT4LC4M16F5

Abstract: MT4LC4M16F5TG-5 150XI
Text:  MICRON PDMMEnDA1M I TECHNOLOGY, INC. F P M DRAM DRAM MT4LC4M16F5 For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Single , refreshed periodically in order to retain stored data. 4 Meg x 16 FPM DRAM D28.p65 - Rev. 10/99 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©1999, Micron Technology, Inc. MICRON PDMMEnDA1M I TECHNOLOGY, INC. F P M DRAM FUNCTIONAL BLOCK DIAGRAM MT4LC4M16F5 (12


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PDF MT4LC4M16F5 096-cycle 50-pin MT4LC4M16F5TG-5 MT4LC4M16F5 MT4LC4M16F5TG-5 150XI
2011 - M25P UID

Abstract: No abstract text available
Text: Micron M25P80 Serial Flash Embedded Memory Features Micron M25P80 Serial Flash Embedded Memory , Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights reserved. Micron M25P80 Serial Flash Embedded Memory Features Contents , . 50 PDF: 09005aef84566560 m25p80.pdf - Rev. G 1/13 EN 2 Micron Technology, Inc. reserves


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PDF M25P80 512Kb 2014h) 09005aef84566560 M25P UID
2011 - Not Available

Abstract: No abstract text available
Text: 75MHz, Serial Peripheral Interface Flash Memory Features Micron Serial NOR Flash Memory 3V, 4Mb , discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All rights , . 41 PDF: 09005aef845660fc m45pe40.pdf - Rev. A 05/13 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2011 Micron Technology, Inc. All


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PDF 75MHz, M45PE40 4013h) 09005aef845660fc
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