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128MB SanDisk Corporation Bristol Electronics - -
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443HS009NF1912-8MB Glenair Inc Powell Electronics 6 $752.84 $402.68
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LCD CONTROLLER MAX.128MB EXT. ROHSCONF Seiko Epson Corporation Rutronik 2,060 $5.08 $4.73
M13323128MBPC133 omega ComS.I.T. - -
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MTFDDAK128MBD-1AK12ITYY Micron Technology Inc Chip1Stop 10 $119.00 $119.00
MTFDDAK128MBD-1AK12ITYY Micron Technology Inc Avnet 0 $151.69 $138.99
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ZSE30-T1-28-MB SMC Corporation of America Allied Electronics & Automation 0 $96.95 $96.95

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128MB datasheet (1)

Part Manufacturer Description Type PDF
128MbRDRAMs Rambus Rambus SO-RIMM Module (with 64Mb RDRAMs) Original PDF

128MB Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - PF38F4060M0Y3DF

Abstract:
Text: X16D - 105ball 9x11 mm 1Gb + 128P MUX PF38F6060M0Y3DE 1Gb 128Mb M PSRAM Uniform , PF38F5060M0Y0CF 512Mb 128Mb M PSRAM Uniform 1.8 1.8 Paralell x16 x16 X16C - 107ball 8x11 mm 512Mb + 128PS MUX PF38F5060M0Y3CF 512Mb 128Mb M PSRAM Uniform , 512Mb 128Mb M SDR Uniform 1.8 1.8 Paralell x16 x16 X16D - 105ball 9x11 mm 512Mb + 128DDR MUX PF38F5060M0Y1EE 512Mb 128Mb M DDR Uniform 1.8 1.8


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PDF 1024Mb PF58F0062M0Y1BF 105ball PF58F0033M0Y0BF x1x16 80Ball M36A0W5040B/ M36A0W5030B/ PF38F4060M0Y3DF PF38F3040 PF38F5060M0Y0CF PF48F6000M0Y1BH m36w0r6050u M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
TS128MDOM40V

Abstract:
Text: Transcend 40-Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB , products 40-Pin IDE Flash Modules are ideal for use in the · Storage Capacity: 128MB ~ 8GB , 0.008 1 Ver 1.7 Transcend 40-Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB Input Power Pin Assignments Pin No. Pin Name Pin Pin Pin No. Name No , -Piin IIDE Fllash Modulle Transcend 40-P n DE F ash Modu e 128MB ~ 8GB 128MB ~ 8GB Block Diagram With 1


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PDF 40-Piin 128MB 40-Pin TS128MDOM40V HD10 HD11 HD15 Transcend TS256MDOM40V TS512MDOM40V
2001 - MT48LC4M32B2P

Abstract:
Text: 18 20 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. U 04/13 EN 5 Micron Technology, Inc


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PDF 128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P 6A 1176 marking 6a2 smd
2001 - MT48LC4M32B2P

Abstract:
Text: / decoder. PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 1 Products and specifications , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 2 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 3 Micron Technology, Inc , . 80 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 4 Micron Technology, Inc , . 41 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. P 9/11 EN 5 Micron Technology, Inc


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PDF 128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P x32s x32SDR
SAMSUNG NAND Flash Qualification Report

Abstract:
Text: SAMSUNG 128Mb NAND Flash Qualification & Reliability Report [ 128Mb NAND Flash C-die , whole without Samsung`s written approval. 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory , , Reliability test methods. This report has been revised the reliability and qualification data for the 128Mb , Information · Reliability Test Results · 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 , Bits 63TBGA 1.7V ~ 1.95V 128Mb NAND - 4th - QUAL JBK - 2003 - September - 30 Memory Quality


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PDF 128Mb industria1980 30pcs 48TSOP1 SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability NAND "read disturb" Samsung NAND Qualification Reliability NAND Flash Qualification Reliability NAND qualification NAND read disturb 63-TBGA K9S2808V0C-SSB0 SAMSUNG NAND Qualification
1999 - MT48LC16M8A2BB

Abstract:
Text: 2-2-2 15 15 15 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 1 , Decoder: www.micron.com/decoder PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 , . 85 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 3 Micron , . 76 PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 4 Micron , . PDF: 09005aef84baf515 128mb_x4x8x16_ait-aat_sdram.pdf - Rev. B 11/13 EN 5 78 80 81 82


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PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef84baf515 x4x8x16 MT48LC16M8A2BB
2001 - MT48LC4M32B2P

Abstract:
Text: 143 3-3-3 20 20 21 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 1 , MT48LC4M32B2F51 4 Meg x 32 1. FBGA Device Decoder: www.micron.com/decoder. PDF: 09005aef80872800 128mb_x32_sdram.pdf , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. V 09/14 EN 5 Micron Technology, Inc


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PDF 128Mb: MT48LC4M32B2 86-pin 90-ball PC100-compliant 09005aef80872800 MT48LC4M32B2P
2001 - MT48LC4M32B2P

Abstract:
Text: 15 18 18 15 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. Q 2/12 EN 5 Micron Technology, Inc


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PDF 128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P TP 472
K4S641632k uc60

Abstract:
Text: Refresh 16 : 16Mb, 4K/64ms 64 : 64Mb, 4K/64ms 28 : 128Mb , 4K/64ms 56 : 256Mb, 8K/64ms 51 : 512Mb, 8K , K4S281632I 128Mb K-die Power (V) LVTTL K4S280432I 4Banks Refresh 8M x 8 K4S641632N 128Mb I-die Interface UC75 UL75 32M x 16 Note 1 : U : TSOP(II) (Lead-free) L : TSOP(II , compatibility with PC100. - Commercial Temp (0°C < Ta < 70°C) Note 4 : 128Mb K-die SDR and 256Mb J-die SDR , ) 1Q'08 128Mb I-die 4Banks K4S281632I UI60/I75 UP60/P75 8M x 16 LVTTL 4K/64ms


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PDF 4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S280832I-UC75 K4S561632J K4S281632K K4S641632N
1999 - siemens a55

Abstract:
Text: . The 128 MB Direct Rambus RIMM module consists of eight 128Mb / 144Mb Direct Rambus DRAM (Direct RDRAMTM , 256banks on each 128MB module Gold plated edge connector pad contacts Serial Presence Detect (SPD) support , x18 128MB /144MB: 64Mb x16 64Mb x16 64Mb x16 64Mb x16 64Mb x18 64Mb x18 64Mb x18 64Mb x18 256MB/288MB: 128Mb x16 128Mb x16 128Mb x16 128Mb x16 128Mb x18 128Mb x18 128Mb x18 128Mb x18 256MB 256MB 256MB 256MB , -845 HYR1612830G-840 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 HYR1812820G-840 16 16 16 16 16 16 16 16 128Mb


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PDF HYR16xx30/HYR18xx20G 128Mb/ 144Mb 600MHz 800MHz 128MB, HYR16xx30G/HYR18xx20G siemens a55 marking b28 siemens a57 siemens A70 siemens b38
2002 - MO-161

Abstract:
Text: accessed, and mode register bit M3 is ignored. i = 7 for 32MB; i = 8 for 64MB and 128MB. 11 Micron , 32MB, 64MB, 128MB (x64, SR) 168-Pin SDRAM UDIMM Features SDRAM Unbuffered DIMM (UDIMM) MT4LSDT464A ­ 32MB MT4LSDT864A(I) ­ 64MB MT4LSDT1664A(I) ­ 128MB For component data sheets, refer to Micron , Meg x 64), 128MB (16 Meg x 64) Single +3.3V power supply Fully synchronous; all signals registered , refresh mode: 64ms, 4,096-cycle refresh for 32MB and 64MB; 64ms, 8,192-cycle refresh for 128MB


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PDF 128MB 168-Pin MT4LSDT464A MT4LSDT864A MT4LSDT1664A 168-pin, PC100- PC133-compliant MO-161 MT4LSDT1664AIY-133 PC133 registered reference design
2001 - MT48LC4M32B2P

Abstract:
Text: 18 20 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 1 Products and , 4 Meg x 32 4 Meg x 32 4 Meg x 32 4 Meg x 32 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3 , . 77 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 3 Micron Technology, Inc , . 78 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 4 Micron Technology, Inc , . 79 PDF: 09005aef80872800 128mb_x32_sdram.pdf - Rev. T 3/13 EN 5 Micron Technology, Inc


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PDF 128Mb: MT48LC4M32B2 PC100-compliant 4096-cycle 09005aef80872800 MT48LC4M32B2P
2001 - Not Available

Abstract:
Text: PRELIMINARY 128Mb , 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY FEATURES · x8/x16 organization · One hundred twenty-eight 128KB erase blocks ( 128Mb ) Sixty-four 128KB erase blocks (64Mb , Asynchronous Page Mode Reads: 150ns/25ns read access time ( 128Mb ) 120ns/25ns read access time (64Mb) 100ns/25ns , · Timing 150ns ( 128Mb ) 120ns (64Mb) 100ns (32Mb) · Operating Temperature Range Extended Temperature , only exists on the 64Mb and 128Mb devices. On the 32Mb, this pin/ball is a no connect (NC). 2. A23 only


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PDF 128Mb, x8/x16 128KB 128Mb) 150ns/25ns 120ns/25ns 100ns/25ns
2004 - Not Available

Abstract:
Text: 32MB, 64MB, 128MB (x64, SR) 168-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE Features · · · · · · · , (4 Meg x 64), 64MB (8 Meg x 64), 128MB (16 Meg x 64) Single +3.3V power supply Fully synchronous; all , Self Refresh Mode: 64ms, 4,096-cycle refresh for 32MB and 64MB; 64ms, 8,192-cycle refresh for 128MB , ) ­ 64MB MT4LSDT1664A(I) ­ 128MB Figure 1: 168-Pin DIMM (MO-161) Standard 1.00in. (25.40mm , , BA1) 128Mb (8 Meg x 16) 4K (A0-A11) 512 (A0-A8) 1 (S0#, S2#) 128MB 8K 4 (BA0, BA1) 256Mb (16 Meg x 16


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PDF 128MB 168-PIN 168-pin, PC100- PC133-compliant 096-cycle 192-cycle 128MB
tsop-56 samsung

Abstract:
Text: Density Process Pkg-Pins 128Mb 128Mb 256Mb 256Mb 512Mb 512Mb 1Gb 1Gb 1Gb 1Gb 1Gb 2Gb 2Gb 4Gb , THNCF1G02DG THNCF1G02DGI 128MB 128MB 128MB 256MB 256MB 256MB 512MB 512MB 512MB 1GB 1GB 1GB , SD-M6404 SD-M1284 SD-F1284 SD-M2564 SD-F2564 SD-M5124 SD-F5125 SD-M01GS *1 Capacity 64MB 128MB 128MB 256MB 256MB 512MB 512MB 1GB MP MP MP MP MP MP MP MP Standard (blue) Standard , 128Mbit 0.175µm 8Mx16 2.7 BGA(9x12) MP TC51YNM716AXBN 128Mbit 0.175µm 8Mx16 1.8 BGA(9x12) CS *1


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PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 THNCF1G02DG TSOP1-48 tc58fvm5t2atg THNCF1G02DGI toshiba Nand flash bga SD-M512 TC58NVG0S3AFTI5 THNCF128MMG
2002 - fw209

Abstract:
Text: 128Mb , 64Mb, 32Mb Q-FLASH MEMORY Q-FLASHTM MEMORY FEATURES · x8/x16 organization · One hundred twenty-eight 128KB erase blocks ( 128Mb ) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks , /25ns read access time ( 128Mb ) 120ns/25ns read access time (64Mb) 110ns/25ns read access time (32Mb) · , 64-Ball FBGA OPTIONS · Timing 150ns ( 128Mb ) 120ns (64Mb) 110ns (32Mb) · Operating Temperature Range Commercial Temperature (0ºC to +85ºC) Extended Temperature (-40ºC to +85ºC) 128Mb , 64Mb, 32Mb


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PDF 128Mb, x8/x16 128KB 128Mb) 150ns/25ns 120ns/25ns 110ns/25ns fw209
2004 - 100-PIN

Abstract:
Text: 16MB (x32, SR); 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U ­ 16MB MT4LSDT832UD ­ 32MB MT4LSDT1632UD ­ 64MB MT4LSDT3232UD ­ 128MB For the latest data , · 16MB (4 Meg x 32) , 32MB (8 Meg x 32), 64MB (16 Meg x 32), and 128MB (32 Meg x 32) · Utilizes , ,096-cycle refresh (15.625µs refresh interval); 128MB modules; 64ms, 8,192-cycle refresh (7.81µs , _4C4_8_16_32x32UDG.fm - Rev. A 12/04 EN 16MB 32MB 64MB 128MB 4K 4K 4K 8K 4 (BA0­BA1) 4


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PDF 128MB 100-PIN MT2LSDT432U MT4LSDT832UD MT4LSDT1632UD MT4LSDT3232UD 100-pin, PC133-compliant 3CK10 MT48LC8M16A2P
2001 - Not Available

Abstract:
Text: 128Mb : x4, x8, x16 SDRAM SYNCHRONOUS DRAM FEATURES · PC100-, and PC133-compliant · Fully , Marking Table. *CL = CAS (READ) latency 128Mb : x4, x8, x16 SDRAM 128MSDRAM_E.p65 ­ Rev. E; Pub. 5/01 , MICRON WITHOUT NOTICE. 128Mb : x4, x8, x16 SDRAM FBGA PIN ASSIGNMENT (Top View) 32 Meg x 4 8 x 16mm , Depopulated Balls 128Mb : x4, x8, x16 SDRAM 128MSDRAM_E.p65 ­ Rev. E; Pub. 5/01 2 Micron Technology , , Inc. 128Mb : x4, x8, x16 SDRAM 128Mb SDRAM PART NUMBERS PART NUMBER MT48LC32M4A2TG MT48LC32M4A2FC


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PDF 128Mb: PC100-, PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 60-pin, 11x13
2001 - Not Available

Abstract:
Text: 128Mb : x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM Features: • • • • • • • â , FC2 Timing Types: PC100 (3-3-3) PC133 (3-3-3) -8A -75A Part number example: The 128Mb , .) PDF: 09005aef807827f6 / Source: 09005aef807825bd 128Mb SDRAM Rev: 11/29/2004 1 www.spectek.com , SpecTek 128Mb : x4, x8, x16 SDRAM 3.3V coincident with the READ or WRITE commands are used to select , is initiated at the end of the burst sequence. The 128Mb SDRAM uses an internal pipelined


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PDF 128Mb: PC-100 PC133 096-cycle optS80016LK7 S16008LK9 54-pin 60-ball PC100
2004 - MT46V16M16

Abstract:
Text: 64MB, 128MB , 256MB (x64, SR) 200-Pin DDR SDRAM SODIMM Features DDR SDRAM SODIMM MT4VDDT864H ­ 64MB1 MT4VDDT1664H ­ 128MB MT4VDDT3264H ­ 256MB For component data sheets, refer to Micron's Web site , rates: PC2100, PC2700, or PC3200 · 64MB (8 Meg x 64), 128MB (16 Meg x 64), or 256MB (32 Meg x 64) · VDD , ); 7.8125µs ( 128MB , 256MB) maximum average periodic refresh interval · Serial presence-detect (SPD) with , discussed herein are subject to change by Micron without notice. 64MB, 128MB , 256MB (x64, SR) 200


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PDF 128MB, 256MB 200-Pin MT4VDDT864H 64MB1 MT4VDDT1664H 128MB MT4VDDT3264H 200-pin, MT46V16M16 MT46V32M16 MT4VDDT1664HY-335
1999 - micron marking MT48LC8M16A2B4

Abstract:
Text: ) CL (ns) 18 20 15 18 20 15 18 20 15 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 1 , x 8 8 Meg x 16 8 Meg x 16 8 Meg x 16 16 Meg x 16 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1 , . 84 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 4 Micron Technology, Inc , . 78 80 82 83 84 85 86 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. Q 1/12 EN 5 Micron


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PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d micron marking MT48LC8M16A2B4 MT48LC16M8A2BB
1999 - MT48LC16M8A2BB

Abstract:
Text: : 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 1 Products and specifications discussed herein are subject to , Meg x 8 16 Meg x 8 8 Meg x 16 8 Meg x 16 8 Meg x 16 16 Meg x 16 PDF: 09005aef8091e66d 128Mb_sdr.pdf , . 84 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 3 Micron Technology, Inc , . 77 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 4 Micron Technology, Inc , . 78 80 82 83 84 85 86 PDF: 09005aef8091e66d 128Mb_sdr.pdf - Rev. P 9/11 EN 5 Micron


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PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d MT48LC16M8A2BB PC133 registered reference design SMD marking B44 TN-48-09
1999 - MT48LC16M8A2BB

Abstract:
Text: 15 15 PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 1 Micron , Note: 1. FBGA Device Decoder: www.micron.com/decoder PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf , . 83 PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 3 Micron Technology , . 77 PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 4 Micron Technology , . PDF: 09005aef8091e66d 128mb_x4x8x16_sdram.pdf - Rev. U 01/14 EN 5 79 81 82 83 84 85


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PDF 128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 09005aef8091e66d x4x8x16 MT48LC16M8A2BB
2008 - 8M16

Abstract:
Text: 3 5ns 5.4ns 1. CL = CAS (READ) latency PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev , available at www.micron.com/decoder. PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN , . 85 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 3 Micron , . 85 85 85 85 85 85 85 86 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN , . 42 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 5 Micron


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PDF 128Mb: MT48H8M16LF MT48H4M32LF 09005aef832ff1ea 8M16 MT48H4M32
2008 - MT48H4M32

Abstract:
Text: 5ns -75 104 133 8ns 5.4ns Note: PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf , /decoder. PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 2 Micron Technology , . 85 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 3 Micron , . PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 4 85 85 85 85 85 , . 42 PDF: 09005aef832ff1ea 128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN 5 Micron


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PDF 128Mb: MT48H8M16LF MT48H4M32LF 54-ball 90-ball 09005aef832ff1ea MT48H4M32 MT48H4M32LF 4M32 8M16 Compound MT48H8M16LF
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