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Part Manufacturer Description Datasheet Download Buy Part
LT1128MN8 Linear Technology IC OP-AMP, PDIP8, PLASTIC, DIP-8, Operational Amplifier
LT1128MS8 Linear Technology IC OP-AMP, PDSO8, 0.150 INCH, PLASTIC, SO-8, Operational Amplifier
LT1128MJ8 Linear Technology IC OP-AMP, 180 uV OFFSET-MAX, 20 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC SEALED, CERDIP-8, Operational Amplifier
LT1796CN8#PBF Linear Technology LT1796 - Overvoltage Fault Protected CAN Transceiver; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1796IN8#PBF Linear Technology LT1796 - Overvoltage Fault Protected CAN Transceiver; Package: PDIP; Pins: 8; Temperature Range: -40°C to 85°C
LT1796CS8#PBF Linear Technology LT1796 - Overvoltage Fault Protected CAN Transceiver; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

128M-BIT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
KVR133X72RC3L

Abstract:
Text: Memory Module Specification KVR133X72RC3L/1024 1024MB 128M x 72- Bit PC133 Registered CL3 Low Profile ECC 168-Pin DIMM DESCRIPTION: This document describes ValueRAM's 128M x 72- bit (1024MB) CAS , this module include eighteen stacked 128M x 4- bit (thirty-six 64M x 4- bit ) PC133 (8K refresh) SDRAM , .040 2 PLCS 168 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x 4- Bit 128M x


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PDF KVR133X72RC3L/1024 1024MB 72-Bit PC133 168-Pin 72-bit 1024MB) PC133 KVR133X72RC3L
2002 - 128M-BIT

Abstract:
Text: New products MB84VZ128A Stacked MCP Mounted with 128M-bit (×16) Page Mode NOR-type Dual , stacked MCP mounted with two 128M-bit page mode NOR-type flash memories, a low-powerconsumption 16M- bit , in the world by mounting two 128M-bit NOR-type flash memories optimal for storage of application , . New products Product Features Product Configuration 128M-bit NOR-type page read mode dual , 3.1V Figure 2 Block Diagram Vccf_1 Vss A22 to A0 RY/BY_1 A22 to A0 128M-bit Page Mode


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PDF MB84VZ128A 128M-bit 16M-bit 256M-bit 20M-bit 276M-bit, FBGA-139BGA-139P-M01 128M-BIT 128-MBIT image distribution MCP market sram 128m
2005 - mobile circuit diagram

Abstract:
Text: contents 128M-bit Flash memory and 64M- bit mounting area, weight and small power dissipation. Mobile RAM in a 88-pin Stacked CSP for lead free use. Features 128M-bit Flash memory is a 8,388,608 words , Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L" and upper 64Mbit is done by F-CE2#="L". Never select each chip at the same time. In the 128M-bit DINOR(IV , . Some parametric limits are subject to change. M6MGD13BW66CDG 134,217,728- BIT (8,388,608-WORD BY 16- BIT


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PDF M6MGD13BW66CDG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13BW66CDG 128M-bit mobile circuit diagram
2005 - M6MGD13BW34DDG

Abstract:
Text: contents 128M-bit Flash memory and 32M- bit mounting area, weight and small power dissipation. Mobile RAM in a 88-pin Stacked CSP for lead free use. Features 128M-bit Flash memory is a 8,388,608 words , # 32Mbit Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L" and upper 64Mbit is done by F-CE2#="L". Never select each chip at the same time. In the 128M-bit , . Some parametric limits are subject to change. M6MGD13BW34DDG 134,217,728- BIT (8,388,608-WORD BY 16- BIT


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PDF M6MGD13BW34DDG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13BW34DDG 128M-bit mobile circuit diagram
2003 - M6MGD137W34DWG-P

Abstract:
Text: (S-CSP) that contents 128M-bit Flash memory and 32M- bit performance cellular phone and a mobile PC that , , weight and small power dissipation. 128M-bit Flash memory is a 8,388,608 words, single power supply , # 32Mbit Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L , Renesas LSIs M6MGD137W34DWG-P 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package


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PDF M6MGD137W34DWG-P 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD137W34DWG-P 128M-bit MCE Semiconductor mobile circuit diagram
mobile phone

Abstract:
Text: suitable for a high performance (S-CSP) that contents 128M-bit Flash memory and 64M- bit cellular phone , . mounting area, weight and small power dissipation. 128M-bit Flash memory is a 8,388,608 words, single , the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L" and upper 64Mbit is done , . Some parametric limits are subject to change. M6MGD13TW66CWG 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip


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PDF M6MGD13TW66CWG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13TW66CWG 128M-bit mobile phone transistor marking A21 mobile circuit diagram
2003 - M6MGD13VW34DWG

Abstract:
Text: performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M-bit , -pin Stacked CSP for lead free use. 128M-bit Flash memory is a 8,388,608 words, single power supply and high , # M-UB# M-LB# M-CE# 32Mbit Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit , subject to change. M6MGD13VW34DWG 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package


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PDF M6MGD13VW34DWG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13VW34DWG 128M-bit transistor marking A21 mobile circuit diagram mobile phone
W25Q64VSFIG

Abstract:
Text: ), densities from 1M to 128M-bit , small erasable sectors and the industry's highest performance. The W25X , W25Q SpiFlash Family - 1M to 128M-bit , superset compatible with 25X Dual I/O and Quad I/O SPI , -08 W25X20ALSNIG W25X40VSNIG / W25X40AVSNIG W25X40VSSIG / W25X40AVSSIG 128M-bit W25Q128VSFIG Q4-07 Now , - 1M to 64M- bit , superset compatible with 25P - Serial Peripheral Interface (SPI) and Dual Output , include: top and bottom protection, lock-down*, one-time-program* (OTP) and 64 bit unique ID number*.


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PDF 128M-bit, 75MHz 150MHz. 80MHz 320MHz 40M-Byte/S 50MHz) Q1-08 25XxxV 25XxxL W25Q64VSFIG W25X80AVSSIG w25q128 W25X20AVSNIG W25Q32VSSIG 208-MIL W25Q64VSSIG W25Q16VSSIG winbond* W25Q W25X40AVSNIG
2003 - free mobile phone circuit diagram

Abstract:
Text: 128M-bit Flash memory and 32M- bit Mobile RAM in a 72-pin Stacked CSP for lead free use. 128M-bit , : In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L" and upper 64Mbit is , Renesas LSIs RENESAS CONFIDENTIAL M6MGD137W34DWG 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip , 32M- bit Mobile RAM is a 2,097,152 words high density RAM fabricated by CMOS technology for the


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PDF M6MGD137W34DWG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD137W34DWG 128M-bit 32M-bit free mobile phone circuit diagram mobile circuit diagram MCE Semiconductor Mobile Phone Repeater repeater mobile circuit
2003 - transistor marking A21

Abstract:
Text: performance (S-CSP) that contents 128M-bit Flash memory and 64M- bit cellular phone and a mobile PC that are , small power dissipation. 128M-bit Flash memory is a 8,388,608 words, single power supply and high , DQ15 A0 to A21 M-WE# M-OE# M-UB# M-LB# M-CE# 64Mbit Mobile RAM Note: In the 128M-bit DINOR , subject to change. M6MGD13VW66CWG 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package


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PDF M6MGD13VW66CWG 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13VW66CWG 128M-bit transistor marking A21 mobile circuit diagram
discoverable

Abstract:
Text: write-protected. When the QE bit of is set "1", the /WP pin (Hardware Write Protect) function is not available , the serial sequence. When the QE bit of Status Register-2 is set for "1", the function is Serial Data , (CONTINUED) STATUS REGISTER Refer to Tables 2 & 3 for Status Register Format and Status Register Bit , Instruction Set. The function of Status Register bits are described as follows: WIP bit : The Write In Progress (WIP) bit is read-only, and can be used to detect the progress or completion of a program or erase


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PDF 128Mbit IS25LQ128 IS25LQ128: 16384K 128Mb 32K/64KByte 532MHz 66MHz. IS25LQ128-JFLE discoverable IS25LQ128
w25q256

Abstract:
Text: Interface (SPI), densities from 1M to 128M-bit , small erasable sectors and the industry's highest , Family - 1M to 4M- bit (25Q recommended for higher densities) - Serial Peripheral Interface (SPI), Dual Output SPI - Uniform 4KB, 32KB & 64KB erase W25Q SpiFlash Family - 2M to 128M-bit , superset , · · 80 64M- bit W25Q64CVxxI/AG W25Q64DWxxIG 128M-bit W25Q128BVxI/AG 256M- bit , Package Temp. Sample Availability 4 5 7 2M- bit W25X10BVxxIG · 104 3V xx


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PDF 128M-bit, 104MHz 416MHz 50M-Byte/S 50MHz) 150mil, 208mil, 300mil, TFBGA24 w25q256 W25Q256F serial flash 256Mb fast erase spi w25q256fvxig W25Q256FV WINBOND W25q64 W25Q64CV W25Q64 W25Q40 w25q128
2003 - transistor marking A21

Abstract:
Text: Renesas LSIs M6MGD13TW34DWG-P 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13TW34DWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory , area, weight and small power dissipation. 128M-bit Flash memory is a 8,388,608 words, single power , M-WE# M-OE# M-UB# M-LB# M-CE# 32Mbit Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory


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PDF M6MGD13TW34DWG-P 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13TW34DWG-P 128M-bit 32M-bit transistor marking A21 mobile phone circuit diagram A20 marking mobile circuit diagram
Transcend Flash Drive

Abstract:
Text: -DIOW (I/O Write) 16- bit bi-direction Data Bus. DD(7:0) are used for 8- bit register transfers. For , indicates to the host the 16- bit data port has been addressed and the device is prepared to send or receive a 16- bit data word. When transferring in PIO mode 3, 4, or above, this signal should not be used by the host, and all transfers will be 16- bit . When transferring in DMA mode, the host must use a 16- bit DMA channel and this signal will not be asserted. 29 -DMACK (DMA acknowledge) 31


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PDF 44-Piin 44-Pin 44-Pin, Transcend Flash Drive transcend flash memory 4gb transcend ultra flash memory connector ide 40 pin to 44 pin DD10 DD11
2001 - ELPIDA

Abstract:
Text: . 10 TM (32- bit RIMM , (word x bit ) Banks 128M x 4 4 Grade (CL-tRCD-tRP) Speed Grade 7A PC133(3-3-3) 4 , (word x bit ) Banks Grade (CL-tRCD-tRP) Speed Grade Part Number Supply Voltage Refresh , ) 512Mbit Organization Internal (word x bit ) Banks Grade (CL-tRCD-tRP) DDR266(2-2-2) Density , recommend for new design 3. Mobile RAM Density 128Mbit Organization Internal (word x bit ) Banks


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PDF E0226E80 M01E0107 ELPIDA 1gb 144pin pc133 so dimm 200pin SO DIMM EDS5104ABTA EDS5108ABTA EDS5116ABTA ELPIDA DRAM selection guide PC800 sdram elpida
2003 - 52-pin TSOP

Abstract:
Text: performance Package (S- µMCP) that contents 128M-bit Flash memory cellular phone and a mobile PC that are , small power dissipation. 128M-bit Flash memory is a 8,388,608 words, single power supply and high , # M-LB# M-CE# 32Mbit mobileRAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is , parametric limits are subject to change. 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS mobileRAM Stacked- µMCP (micro Multi Chip Package


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PDF M6MGD137W34DKT 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD137W34DKT 128M-bit 52-pin TSOP making a10
2003 - transistor marking A21

Abstract:
Text: subject to change. M6MGD13VW34DWG-P 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13VW34DWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory , area, weight and small power dissipation. 128M-bit Flash memory is a 8,388,608 words, single power , the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L" and upper 64Mbit is done


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PDF M6MGD13VW34DWG-P 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13VW34DWG-P 128M-bit 32M-bit transistor marking A21 mobile circuit diagram
2003 - transistor marking A21

Abstract:
Text: subject to change. M6MGD13VW66CWG-P 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13VW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M- bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball. 128M-bit Flash memory is a , DQ15 A0 to A21 M-WE# M-OE# M-UB# M-LB# M-CE# 64Mbit Mobile RAM Note: In the 128M-bit DINOR


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PDF M6MGD13VW66CWG-P 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13VW66CWG-P 128M-bit 64M-bit transistor marking A21 mobile circuit diagram
w25q128

Abstract:
Text: ), densities from 1M to 128M-bit , small erasable sectors and the industry's highest performance. The W25X , 30 4M to 128M-bit , superset compatible with 25X SPI, Dual SPI and Quad SPI Uniform 4KB, 32KB & , W25Q32VxxIG W25Q32BVxxIG W25Q32BWxxIG W25X64VxxIG · · · · · · · Density Winbond Part # 1M- bit 2M- bit 4M- bit 8M- bit 16M- bit 32M- bit 64M- bit 128M-bit 1 W25X64BVxxIG 6 , Dual-SPI 1M to 64M- bit , superset compatible with 25P Serial Peripheral Interface (SPI), Dual Output SPI


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PDF 128M-bit, 104MHz 208MHz. 416MHz 50M-Byte/S 50MHz) 300mil. W25QxxB W25XxxB w25q128 W25Q40 W25Q64 Q-309 winbond* W25Q W25Q80b 25xxx 8x6mm W25X80BV W25Q16BW
2003 - transistor marking A21

Abstract:
Text: subject to change. M6MGD13TW66CWG-P 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 67,108,864- BIT (4,194,304-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD13TW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M- bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball. 128M-bit Flash memory is a , # 64Mbit Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L


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PDF M6MGD13TW66CWG-P 728-BIT 608-WORD 16-BIT) 864-BIT 304-WORD M6MGD13TW66CWG-P 128M-bit 64M-bit transistor marking A21 mobile circuit diagram
128M-BIT

Abstract:
Text: MB8504E036AA-60 MB814105C x4 MB8504E036AA-70 8Mx32 MB85392A-60 MB85392A-70 MB8117400A x16 256M- bit MB8117400A x8 MB814100C x4 144M- bit MB8117400A x8 128M-bit MB814400C x16 MB814405C x16 64M- bit 11 72Pin SIMM 88 72Pin SIMM 88 72Pin SIMM 60(15] 70(17] 60(15] 70(17] 60 , 44 72Pin SIMM 66 72Pin SIMM 60(15] 70(20] 60(15] 70(17] 60(20] 70(22] 128M-bit 60(20] 70 , Standby Mode (CMOS level} 44 72Pin SIMM MB85341C-60 MB85341C-70 1Mx32 MB85343C-60 MB85343C-70 32M- bit


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PDF MB814400C MB814405C 72Pin MB85341C-60 MB85341C-70 1Mx32 MB85343C-60 MB85343C-70 32M-bit 128M-BIT 128-MBIT 256-MBIT
2001 - M2V28S20ATP

Abstract:
Text: Synchronous DRAM M2V28S20ATP -5,-5L,-6,-6L,-7,-7L (4-BANK x 8,388,608-WORD x 4- BIT ) M2V28S30ATP -5,-5L,-6,-6L,-7,-7L (4-BANK x 4,194,304-WORD x 8- BIT ) M2V28S40ATP -5,-5L,-6,-6L,-7,-7L (4-BANK x 2,097,152-WORD x 16- BIT ) Some of contents are described for general products and are subject to change w ithout notice. DESCRIPTION M2V28S20ATP is organized as 4-bank x 8,388,608-word x 4- bit Synchronous DRAM with LVTTL interface and M2V28S30ATP is organized as 4-bank x 4,194,304-word x 8- bit and M2V28S40ATP is


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PDF M2V28S20ATP 608-WORD M2V28S30ATP 304-WORD M2V28S40ATP 152-WORD 16-BIT)
1998 - V28S40

Abstract:
Text: -7,-8A,-8,-10 M2V28S30TP-7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 (4-BANK x 8,388,608-WORD x 4- BIT ) (4-BANK x 4,194,304-WORD x 8- BIT ) (4-BANK x 2,097,152-WORD x 16- BIT ) PRELIMINARY Some of contents are , organized as 4-bank x 8,388,608-word x 4- bit Synchronous DRAM with LVTTL interface and M2V28S30TP is organized as 4-bank x 4,194,304-word x 8- bit and M2V28S40TP is organized as 4-bank x 2,097,152-word x 16- bit , -7,-8A,-8,-10 M2V28S40TP-7,-8A,-8,-10 (4-BANK x 8,388,608-WORD x 4- BIT ) (4-BANK x 4,194,304-WORD x 8- BIT


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PDF M2V28S20TP-7 M2V28S30TP-7 M2V28S40TP-7 608-WORD 304-WORD 152-WORD 16-BIT) M2V28S20TP M2V28S30TP V28S40
2003 - mobile circuit diagram

Abstract:
Text: performance cellular phone and a mobile PC that are required to be small (S-CSP) that contents 128M-bit , -pin Stacked CSP for lead free use. 128M-bit Flash memory is a 8,388,608 words, single power supply and high , Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#="L" and , RENESAS LSIs M6MGD13TW34DWG 134,217,728- BIT (8,388,608-WORD BY 16- BIT ) CMOS FLASH MEMORY & 33,554,432- BIT (2,097,152-WORD BY 16- BIT ) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package


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PDF M6MGD13TW34DWG 728-BIT 608-WORD 16-BIT) 432-BIT 152-WORD M6MGD13TW34DWG 128M-bit mobile circuit diagram transistor marking A21 A20 marking a7 moe free mobile phone circuit diagram
1998 - 128M NAND Flash Memory

Abstract:
Text: high programming voltage required Organization Memory Cell Array : (16M + 512K) bit x 8bit Data Register : (512 + 16) bit x8bit Dimensions: 0.824"L x 0.532"W x 0.460"H General Description The , bit wide device and can be user configured as a 8 bit wide or 16 bit wide device. Separate chip enables are available for each chip in the stack. For 8 bit applications the data pins needing to be tied together are adjacent to each other to simplify the PCB design. Similarly, in 16 bit , applications the CEs


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PDF ISC-MPD-64M16F 128Mbit 528-Byte 128M NAND Flash Memory Irvine Sensors ISC-MPD-64M16F KM29U128
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