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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
MSP430F5418IPN Texas Instruments 16-Bit Ultra-Low-Power Microcontroller, 128KB Flash, 16KB RAM, 12 Bit ADC, 2 USCIs, 32-bit HW Multi 80-LQFP -40 to 85
MSP430F5419AIPZ Texas Instruments 16-Bit Ultra-Low-Power Microcontroller, 128KB Flash, 16KB RAM, 12 Bit ADC, 4 USCIs, 32-bit HW Multi 100-LQFP -40 to 85
MSP432P401MIZXHT Texas Instruments SimpleLink Ultra-Low-Power 32-Bit ARM Cortex-M4F MCU With Precision ADC, 128KB Flash and 32KB RAM 80-NFBGA -40 to 85
MSP430F5419IPZ Texas Instruments 16-Bit Ultra-Low-Power Microcontroller, 128KB Flash, 16KB RAM, 12 Bit ADC, 4 USCIs, 32-bit HW Multi 100-LQFP -40 to 85
MSP430F5419AIPZR Texas Instruments 16-Bit Ultra-Low-Power Microcontroller, 128KB Flash, 16KB RAM, 12 Bit ADC, 4 USCIs, 32-bit HW Multi 100-LQFP -40 to 85
MSP430F5519IPN Texas Instruments 25 MHz MCU with Integrated USB Phy, 128KB Flash, 8KB RAM, 32BIT HW Multiplier 80-LQFP -40 to 85
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Micron Technology Inc
M58LR128KB85ZB6F WIRELESS FLASH - Tape and Reel (Alt: M58LR128KB85ZB6F)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet M58LR128KB85ZB6F Reel 0 12 Weeks 2,500 - - - - - Get Quote
Micron Technology Inc
M58LR128KB70ZB5E NOR Flash Parallel/Serial 1.8V 128Mbit 8M x 16bit 70ns 56-Pin VFBGA Tray - Trays (Alt: M58LR128KB70ZB5E)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet M58LR128KB70ZB5E Tray 0 12 Weeks 2,016 - - - - - Get Quote
Illinois Capacitor Inc
128KBM063MLAG ALUMINUM ELECTROLYTIC CAPACITOR
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Richardson RFPD 128KBM063MLAG 0 3,600 - - - - $0.72 Buy Now
MISC
WE128KB-250CM
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
New Advantage Corporation WE128KB-250CM 135 - - - - - Buy Now

128K-B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: – Weight, 170 grams ■Vibration conforms with MIL-STD883D Method 2007.2, Conditions A, B , C. ■32BIT# 16BIT# 5 Volt Operation ■ÔfT B # Configurable as 8 M x 8 , 4M x 16 or 2M x 32 Shock conforms with MIL-STD-883D Method 2002.3, Conditions B , ”Y” Axis. BT« YE BY TE3 , , (continued on page 3) -1 - 9 0 0 0 -3 9 6 6 B O U n A R / U H I T E T E C H N O L O G Y SDE  , # (Write Enable), RD# (Read Enable), B yte l# - Byte4#, 8/16/32bit#. When asserted low, the chip enable


OCR Scan
PDF WS-64M-XX 811B3
2005 - 012F

Abstract: reset nand flash 804aH
Text: NC VSS CLK VCC WE NC NC NC NC B VCC NC NC AVD INT RP , DEFINITIONS B (capital letter) W (capital letter) b (lower-case letter) ECC Calculated ECC Written ECC , 10038h 1003Ah 1003Ch 1003Eh F E D C B A 9 8 BI 7 6 5 4 3 2 1 , 1007Eh 10080h 10082h 10084h 10086h 10088h 1008Ah 1008Ch 1008Eh F E D C B A 9 8 BI , 804Dh 804Eh 804Fh 10090h 10092h 10094h 10096h 10098h 1009Ah 1009Ch 1009Eh F E D C B A


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PDF MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 012F reset nand flash 804aH
128k x 8 eeprom

Abstract: 64k x 8 64k x 8 sram
Text: . The Flexi-Pak family utilizes the fastest commercial grade and MIL-STD-883 Class B military grade , components compliant with the latest revision of MIL-STD883 Class B , making them ideally suited to , 1991 263 UPD A TE 1 B


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PDF util7004 IDT7M7014 IDT7M7012 16/32K IDT7M7002 IDT7M7022* -256K IDT7M7032* 128k x 8 eeprom 64k x 8 64k x 8 sram
1999 - GS84032AT-190i

Abstract: No abstract text available
Text: GS84018/32/36AT/ B -190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp Features · FT pin , ://www.gsitechnology.com. GS84018/32/36AT/ B -190/180/166/150/100 GS84018A 100-Pin TQFP Pinout (Package T) VDDQ VSS , ://www.gsitechnology.com. GS84018/32/36AT/ B -190/180/166/150/100 GS84032A 100-Pin TQFP Pinout (Package T) NC DQC DQC , ://www.gsitechnology.com. GS84018/32/36AT/ B -190/180/166/150/100 GS84036A 100-Pin TQFP Pinout (Package T) DQPC DQC , documentation see http://www.gsitechnology.com. GS84018/32/36AT/ B -190/180/166/150/100 TQFP Pin Description


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PDF GS84018/32/36AT/B-190/180/166/150/100 100-lead 119-bump 84018A 840xxA GS84032AT-190i
1999 - 180I

Abstract: GS840E18A GS840E18AT-180 GS840E18AT-190 GS840E32A GS840E36A GS840E18AGT-100
Text: GS840E18/32/36AT/ B -190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18 , GS840E18/32/36AT/ B -190/180/166/150/100 A A E1 E2 NC NC BB BA E3 VDD VSS CK GW BW G ADSC , documentation see http://www.gsitechnology.com. © 1999, GSI Technology GS840E18/32/36AT/ B -190/180/166/150 , ://www.gsitechnology.com. © 1999, GSI Technology GS840E18/32/36AT/ B -190/180/166/150/100 A A E1 E2 BD BC BB , . © 1999, GSI Technology GS840E18/32/36AT/ B -190/180/166/150/100 TQFP Pin Description Symbol Type


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PDF GS840E18/32/36AT/B-190/180/166/150/100 100-lead orGS840E18/32/36AT/B-190/180/166/150/100 840E18A 180I GS840E18A GS840E18AT-180 GS840E18AT-190 GS840E32A GS840E36A GS840E18AGT-100
2005 - 8044H

Abstract: No abstract text available
Text: DEFINITIONS B (capital letter) W (capital letter) b (lower-case letter) ECC Calculated ECC Written ECC , F E D C B A 9 8 BI 7 6 5 4 3 2 1 0 Managed by , B A 9 8 BI 7 6 5 4 3 2 1 0 Managed by Internal ECC logic , 804Fh 10090h 10092h 10094h 10096h 10098h 1009Ah 1009Ch 1009Eh F E D C B A 9 8 BI


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PDF OneNAND512/OneNAND1GDDP 512Mb KFG1216Q2M-DEB KFG1216D2M-DEB KFG1216U2M-DIB KFH1G16Q2M-DEB KFH1G16D2M-DEB KFH1G16U2M-DIB 63FBGA 8044H
2005 - 8015

Abstract: No abstract text available
Text: K F G 1G 1 6 X 2 M - X X B 6 Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block , ) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Device Architecture · , (KFG1G16x2M-DxB6) FLASH MEMORY 2.2 Definitions B (capital letter) W (capital letter) b (lower-case letter


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PDF KFW4G16Q2M-DxB6) KFH2G16Q2M-DxB6) KFG1G16x2M-DxB6) KFG1G16Q2M-DEB6 KFG1G16D2M-DEB6 KFG1G16U2M-DIB6 63FBGA 8015
2005 - 4GB MLC NAND

Abstract: samsung 2GB Nand flash KFW4G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFG1G16Q2M-DEB6 63FBGA Samsung MLC Samsung Electronics. NAND flash memory samsung 1Gb nand flash 0235H
Text: xx16 Q 2 M - D E B 6 Samsung OneNAND Memory Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D : Daisy Sample Device Type G : Single Chip H : Dual Chip W: Quad Chip , ~ 1.95V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Synchronous Burst , ) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction Code Calculated ECC ECC that has


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PDF KFW4G16Q2M-DEB6) KFH2G16Q2M-DEB6) KFG1G16Q2M-DEB6) KFG1G16Q2M-DEB6 63FBGA KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 4GB MLC NAND samsung 2GB Nand flash KFW4G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFG1G16Q2M-DEB6 Samsung MLC Samsung Electronics. NAND flash memory samsung 1Gb nand flash 0235H
2005 - KFW4G16Q2M-DEB5

Abstract: 63FBGA KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFG1G16x2M-DxB5 NAND FLASH DDP samsung 649
Text: Ordering Information K F G 1G 1 6 X 2 M - X X B 5 Samsung OneNAND Memory Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D : Daisy Sample Device Type G : Single Chip , ~ 1.95V), 2.65V (2.4 ~ 2.9V), 3.3V (2.7 ~3.6V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Synchronous Burst Read - Up to 54MHz clock frequency - Linear Burst 4-, 8-, 16 , (KFG1G16x2M-DxB5) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter


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PDF KFW4G16Q2M-DxB5) KFH2G16Q2M-DxB5) KFG1G16x2M-DxB5) KFG1G16Q2M-DEB5 63FBGA KFG1G16D2M-DEB5 KFG1G16U2M-DIB5 KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 KFG1G16Q2M-DEB5 KFH2G16Q2M-DEB5 KFG1G16x2M-DxB5 NAND FLASH DDP samsung 649
2005 - OneNAND

Abstract: KFH2G16Q2M-DEB5 63FBGA KFG1G16Q2M-DEB5 KFW4G16Q2M-DEB5
Text: /Software) Internal Scalability · · Ordering Information KF x xx16 Q 2 M - D E B 5 Samsung OneNAND Memory Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D , 90nm 1.8V (1.7V ~ 1.95V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size , (KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction


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PDF KFW4G16Q2M-DEB5) KFH2G16Q2M-DEB5) KFG1G16Q2M-DEB5) KFG1G16Q2M-DEB5 63FBGA KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 OneNAND KFH2G16Q2M-DEB5 KFG1G16Q2M-DEB5 KFW4G16Q2M-DEB5
2005 - 0301H

Abstract: Samsung nand flash 2GB MLC SAMSUNG 256Mb NAND Flash Qualification Report samsung 2GB Nand flash Samsung 2Gb MLC Nand flash samsung 1Gb nand flash onenand MUXOneNAND kfg1g16q2 803A
Text: 1G 1 6 Q 2 A - D E B x Samsung OneNAND Memory Speed 6 : 66MHz 8 : 83MHz Device Type G : Single Chip H : Dual Chip W: Quad Chip Product Line desinator B : Include Bad Block D : Daisy , , 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Device Performance · Host Interface Type , ) 2.2 Preliminary FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction Code Calculated ECC


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PDF KFG1G16Q2A-DEBx) KFH2G16Q2A-DEBx) KFW4G16Q2A-DEBx) KFG1G16Q2A-DEBx 63FBGA KFH2G16Q2A-DEBx KFW4G16Q2A-DEBx 0301H Samsung nand flash 2GB MLC SAMSUNG 256Mb NAND Flash Qualification Report samsung 2GB Nand flash Samsung 2Gb MLC Nand flash samsung 1Gb nand flash onenand MUXOneNAND kfg1g16q2 803A
transistor smd 5DW 73

Abstract: sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
Text: unlimited QML-38534-29 -1- FSC 5962 b . For non-SMD controlled Product: The part will not be


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PDF MIL-PRF-38534 QML-38534-29 30-Jun-99 QML-38534-28 31-Mar-99 MIL-PRF-38534. 16-BIT, transistor smd 5DW 73 sipex 3232 BU-61588P3 SD-14621DX SD14621 sdc 7500 natel 09059 MPC 1298 V 5962-8952211YC 95003-01HXA
1999 - GS84018A

Abstract: GS84036A GS84032AT-190i GS84032AGT-190I GS84032AGT-150I GS84032A GS84018AT-190 GS84018AT-180 GS84018AT-166 gs84018agt-166i
Text: GS84018/32/36AT/ B -190/180/166/150/100 TQFP, BGA Commercial Temp Industrial Temp 256K x 18 , /36AT/ B -190/180/166/150/100 A A E1 E2 NC NC BB BA E3 VDD VSS CK GW BW G ADSC ADSP , documentation see http://www.gsitechnology.com. © 1999, GSI Technology GS84018/32/36AT/ B -190/180/166/150 , ://www.gsitechnology.com. © 1999, GSI Technology GS84018/32/36AT/ B -190/180/166/150/100 A A E1 E2 BD BC BB , . © 1999, GSI Technology GS84018/32/36AT/ B -190/180/166/150/100 TQFP Pin Description Symbol Type


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PDF GS84018/32/36AT/B-190/180/166/150/100 100-lead 84018A 840xxA GS84018A GS84036A GS84032AT-190i GS84032AGT-190I GS84032AGT-150I GS84032A GS84018AT-190 GS84018AT-180 GS84018AT-166 gs84018agt-166i
2003 - Not Available

Abstract: No abstract text available
Text: Ordering Information K F X XX 1 6 Q 2 A - D E X X Speed 6 : 66MHz 8 : 83MHz Product Line desinator B , BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Device Architecture · Design Technology , Definitions B (capital letter) W (capital letter) b (lower-case letter) ECC Calculated ECC Written ECC


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PDF KFG1G16Q2A-DEBx) KFH2G16Q2A-DEBx) KFW4G16Q2A-DEBx) KFXXX16Q2A KFG1G16Q2A) 80x11 KFH2G16Q2A)
2006 - 0587H

Abstract: KFW8G16Q2M 63FBGA 0071H oneNand flash samsung 8Gb nand flash 0719h
Text: B : Include Bad Block D : Daisy Sample Density 2G : 2Gb 4G : 4Gb 8G : 8Gb Operating , DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Device Performance Host Interface Type , ) OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC


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PDF KFG2G16Q2M-DEBx) KFH4G16Q2M-DEBx) KFW8G16Q2M-DEBx) KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 80x11 KFH4G16Q2M) 0587H KFW8G16Q2M 63FBGA 0071H oneNand flash samsung 8Gb nand flash 0719h
2005 - Toggle DDR NAND flash Samsung

Abstract: 0000h 63FBGA KFM1216Q2A-DEB5
Text: Ordering Information K F M 12 1 6 Q 2 A - D E B 5 Samsung MuxOneNAND Mem- Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D : Daisy Sample Device Type M : Single Chip , (2K+64) B Page Size, (128K+4K) B Block Size Synchronous Burst Read - Up to 54MHz clock frequency - , controllers. 9 MuxOneNAND512(KFM1216Q2A-DEB5) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error


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PDF MuxOneNAND512 KFM1216Q2A-DEB5) 512Mb KFM1216Q2A-DEB5 63FBGA 63-FBGA-9 Toggle DDR NAND flash Samsung 0000h KFM1216Q2A-DEB5
2005 - KFW4G16Q2M-DEB5

Abstract: OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG 63FBGA KFG1G16Q2M-DEB5
Text: Scalability · · Ordering Information KF x xx16 Q 2 M - D E B 5 Samsung OneNAND Memory Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D : Daisy Sample Device Type , BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Synchronous Burst Read - Up to 54MHz , Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter


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PDF KFW4G16Q2M-DEB5) KFH2G16Q2M-DEB5) KFG1G16Q2M-DEB5) KFG1G16Q2M-DEB5 63FBGA KFH2G16Q2M-DEB5 KFW4G16Q2M-DEB5 KFW4G16Q2M-DEB5 OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG KFG1G16Q2M-DEB5
2005 - KFG1216U2A-DIB6

Abstract: mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand 63FBGA KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
Text: ) Internal Scalability · · Ordering Information K F G 12 1 6 Q 2 A - x x B 6 Speed 5 : 54MHz 6 : 66MHz Samsung OneNAND Memory Product Line desinator B : Include Bad Block D : Daisy , (2K+64) B Page Size, (128K+4K) B Block Size Synchronous Burst Read - Up to 66MHz clock frequency - , controllers. 9 OneNAND512(KFG1216x2A-xxB6) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error


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PDF OneNAND512 KFG1216x2A-xxB6) KFG1216Q2A-DEB6 512Mb 63FBGA KFG1216Q2A-FEB6 63FBGA KFG1216U2A-DIB6 KFG1216U2A-FIB6 KFG1216U2A-DIB6 mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
2006 - 512MB NOR FLASH

Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash SAMSUNG NAND FLASH Samsung Electronics. NAND flash memory NAND flash memory mlc nand flash lsb msb code lock circuit flow chart SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: Scalability 1.3 Ordering Information K F G 12 1 6 Q 2 A - x x B 5 Speed 5 : 54MHz 6 : 66MHz Samsung OneNAND Memory Product Line desinator B : Include Bad Block D : Daisy Sample Operating , 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Synchronous Burst Read - Up to , controllers. 9 OneNAND512(KFG1216x2A-xxB5) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error


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PDF OneNAND512 KFG1216x2A-xxB5) KFG1216Q2A-DEB5 512Mb 63FBGA KFG1216Q2A-FEB5 63FBGA KFG1216U2A-DIB5 KFG1216U2A-FIB5 512MB NOR FLASH "bad block" smartmedia ecc oneNand samsung 2GB Nand flash SAMSUNG NAND FLASH Samsung Electronics. NAND flash memory NAND flash memory mlc nand flash lsb msb code lock circuit flow chart SAMSUNG 256Mb NAND Flash Qualification Reliability
2005 - SLC NAND endurance 100k

Abstract: No abstract text available
Text: 1 6 Q 2 M - D E B 6 Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D , ) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Device Architecture · , ) FLASH MEMORY 2.2 Definitions B (capital letter) W (capital letter) b (lower-case letter) ECC


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PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k
2005 - samsung toggle mode NAND

Abstract: No abstract text available
Text: · · X · · NOR · 1.3 Ordering Information K F M 12 1 6 Q 2 A - D E B 5 Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D : Daisy Sample Operating Temperature Range E = , (1.7V ~ 1.95V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Device , MuxOneNAND512(KFM1216Q2A-DEB5) FLASH MEMORY 2.2 Definitions B (capital letter) W (capital letter) b , 10034h 10036h 10038h 1003Ah 1003Ch 1003Eh F E D C B A 9 8 BI 7 6 5 4


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PDF MuxOneNAND512 KFM1216Q2A-DEB5) 512Mb KFM1216Q2A-DEB5 63FBGA 63-FBGA-9 samsung toggle mode NAND
2003 - Not Available

Abstract: No abstract text available
Text: Type M : Single Chip N : Dual Chip Product Line desinator B : Include Bad Block D : Daisy Sample , BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Synchronous Burst Read - Up to 83MHz , MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b


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PDF KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M SG200602484
2005 - samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Text: · · X · · NOR · 1.3 Ordering Information K F M 1G 1 6 Q 2 M - D E B 6 Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D : Daisy Sample Operating Temperature Range E = , Product Features 90nm 1.8V (1.7V ~ 1.95V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B , ) FLASH MEMORY 2.2 Definitions B (capital letter) W (capital letter) b (lower-case letter) ECC


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PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA samsung 2GB Nand flash 121 pins samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
2005 - Samsung oneNand Mux

Abstract: F102H samsung 2GB Nand flash 121 pins 803FH 1001Ah 2112b 8017h 48FBGA KFM1216Q2M SAMSUNG 256Mb NAND Flash Qualification Report
Text: VCC -Core WE NC NC NC NC B VCC -IO NC NC AVD INT RP NC NC , NC NC NC NC 11 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY DEFINITIONS B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC , 8009h 10012h 800Ah 10014h F E D C B A 9 8 7 6 5 4 3 2 , D C B A 9 8 7 6 5 8020h 10040h 10042h 3 2 1 BI 8021h


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PDF MuxOneNAND512 KFM1216Q2M) MuxOneNAND512 KFM1216Q2M 48FBGA 512Mb Samsung oneNand Mux F102H samsung 2GB Nand flash 121 pins 803FH 1001Ah 2112b 8017h KFM1216Q2M SAMSUNG 256Mb NAND Flash Qualification Report
2005 - Not Available

Abstract: No abstract text available
Text: · · X · · NOR · 1.3 Ordering Information K F G 12 1 6 Q 2 A - x x B 6 Speed 5 : 54MHz 6 : 66MHz Product Line desinator B : Include Bad Block D : Daisy Sample Operating Temperature Range E = , ~ 1.95V), 2.65V (2.4 ~ 2.9V), 3.3V (2.7 ~3.6V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64) B Page Size, (128K+4K) B Block Size Device Architecture · Design Technology: · Supply Voltage: · Host Interface: · 5KB , MEMORY 2.2 Definitions B (capital letter) W (capital letter) b (lower-case letter) ECC Calculated


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PDF OneNAND512 KFG1216x2A-xxB6) 512Mb KFG1216Q2A KFG1216D2A KFG1216U2A 63FBGA /63FBGA
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