The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TMS27C128-20JE Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85
TMS27C128-25JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70
TMS27C128-20JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70
TMS27C128-25JE Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85
TMS27C128-1JE Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP -40 to 85
TMS27C128-12JL Texas Instruments 131 072-Bit UV Erasable Programmable Read-Only Memory 28-CDIP 0 to 70

128K x 8 ELECTRICALLY ERASABLE EPROM Datasheets Context Search

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14-CS

Abstract:
Text: Preliminary W27L010 E lectronics Corp 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27L010 is a high speed, low power consumption Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits. It requires only one supply in the range ot 3.0V to 3.6V in normal , electrical erasure. Generally, the chip can be erased within 100 mS by using an EPROM writer with a special , Considerations EPROM power switching characteristics require careful device decoupling. System designers are


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PDF W27L010 W27L010 31iiG S-i7S254? 14-CS winbond io
Not Available

Abstract:
Text: s s }* ttü X P " îrie cfcionics C orp. W27C010 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The W27C010 provides an , b 1 8 y ô D i in , A ) \ in H Le -T T - i l A E J L Seating Plane X G l i C Jc À , A 35134. I Í . S.A. TE:.: Afja-SikiSSf¿ 8 r A X ; 4CS-544179S rAX: y;.; Sv;.í>c: ¿:¡ ;¡o¡o


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PDF W27C010 W27C010 32-pin 372C5 S53-2 4CS-544179S
Not Available

Abstract:
Text: W27E010 7 Electronics Corp. lYinbond 128K x 8 ELECTRICALLY ERASABLE EPROM G E N E R A L D E S C R IP T IO N The W27E010 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates on a single 5 volt power supply. The , A5 A4 A3 A2 A1 AO QO Q1 Q2 GND B L O C K D IA G R A M C c 1 Q 2 3 4 5 6 7 8 9 10 11 12 13 , 1 3 29 28 27 26 32-pin PL C C 25 24 23 22 1 1 1 2 1 7 a 9 0 21 5 6 7 8 9 10 11 12 1 13 4 G 1


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PDF W27E010 W27E010 32-pin
1998 - W27e256

Abstract:
Text: W27EOlO 128K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27EOlO is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 131072 x 8 bits that operates , . 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E512 is a hrgh speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 x 8 bits that operates on a stngle 5 , ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E257 is a high-speed. low-power Electrically Erasable


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PDF W27EOlO 55/70/90/i 32-pin DI13100 l-408-9436666 l-408-9436668 W27e256 W29CO20 *27e256 CA0008 w29c020-70 W27E257-12 W27E257-10 Winbond w27e256
Not Available

Abstract:
Text: I 2 7 H C 1 2 8 U.V. 128K Erasable CMOS (16K X 8 ) EPROM DESCRIPTION The 27HC128 is a CMOS, high-speed Ultra-violet light erasable electrically pro grammable Read Only Memory. It is organized as 16,384 words of 8 bits and operates from a single 5V ± 10% power supply. All outputs offer 3-State opera tion , 853-0290 87920 P rodu ct S p e c ific a tio n 128K Erasable CMOS (16K X 8 ) EPROM 27HC128 U.V , e c ific a tio n 128K Erasable CMOS (16K X 8 ) EPROM 27HC128 U.V. AC ELECTRICAL


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PDF 27HC128 24-pin
flash jedec dip 32-pin

Abstract:
Text: BIT ( 128K x 8 ) CMOS FLASH MEMORY T-WJÉ,- \3>-ZQ> GENERAL DESCRIPTION The MSM28F101 is a high speed 128K x 8 -bit Flash erasable and electrically reprogrammable memory, ideally suited for systems requiring on board code updates. Flash erasable means an electrical erase of the full memory contents , ^s/byte typical 131,072 X 8 -bit configuration TTL compatible Input/Output 12.0V programming JEDEC , pin compatible with EPROM devices and Read timings are fully compatible with EPROM operation


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PDF E424G MSM28F101 MSM28F101 TheMSM28F101 32-Pin flash jedec dip 32-pin
flash jedec dip 32-pin

Abstract:
Text: OKI semiconductor MSM28F101 1 M BIT ( 128K x 8 ) CMOS FLASH MEMORY GENERAL DESCRIPTION The MSM28F101 is a high speed 128K x 8 -bit Flash erasable and electrically reprogrammable memory, ideally suited for systems requiring on board code updates. Flash erasable means an electrical erase of the full , programming 10^s/byte typical 131,072 X 8 -bit configuration TTL compatible Input/Output 12.0V programming , time is reduced. It is pin compatible with EPROM devices and Read timings are fully compatible with


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PDF MSM28F101 MSM28F101 32-Pin l/0al/041/05 flash jedec dip 32-pin
ST27C1000

Abstract:
Text:  SCS-THOMSON ■(LKêïFGMtKgS ST27C1001 S-THOMSON _ 3QE D _1024K ( 128K x 8 ) CMOS UV ERASABLE PROM ADVANCED DATA ■8 BITS OUTPUTS ■FAST ACCESS TIME 120ns. ■LOW "CMOS" CONSUMPTION , Information at the end of the datasheet) The ST27C1001 is a high speed 1 Mbit UV erasable and electrically programmable EPROM ideally suited for 8 -bit microprocessors systems requiring large programs. It is organized , replacement of 64K and 128K standard EPROM versions. • ST87C1011 is the same device as the ST27C1011 with


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PDF ST27C1001 1024K 120ns. DIP-32 ST27C1001 ST87C1000 ST27C1000 8-Bit Microprocessors 16KX8 ST27C1011
Not Available

Abstract:
Text: OKI semiconductor MSM28F101 1 M BIT ( 128K x 8 ) CMOS FLASH MEMORY GENERAL DESCRIPTION The MSM28F101 is a high speed 128K x 8 -bit Flash erasable and electrically reprogrammable memory, ideally suited for systems requiring on-board code updates. Flash erasable means an electrical erase of the full , speed programming 10|is/byte typical 131,072 X 8 -bit configuration · · · · · · TTL compatible Input , time is reduced. It is pin compatible with EPROM devices and Read timings are fully compatible with


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PDF MSM28F101 MSM28F101 32-Pin
LH571000-15

Abstract:
Text: LH571000/J CMOS 1M ( 128K x 8 ) OTPROM/ EPROM FEATURES • 131,072 x 8 bit organization â , Packages 5-72 SHARP CMOS 1M ( 128K x 8 ) OTPROM/ EPROM LH571000/J Figure 2. LH571000/J Block Diagram PIN , LH571000/J CMOS 1M ( 128K x 8 ) OTPROM/ EPROM ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATING UNIT NOTE , ( 128K x 8 ) OTPROM/ EPROM LH571000/J AC CHARACTERISTICS (Read Mode) (Vcc = 5 V ± 10%, Ta = 0 to +70°C , LH571000/J CMOS 1M ( 128K x 8 ) OTPROM/ EPROM RECOMMENDED OPERATING CONDITIONS (Program Mode) (Ta = 25°C Â


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PDF LH571000/J LH571000J: LH571000: 32-pin, 600-mil 28-pin LH571000J 072x8 LH571000-15 LH571000J-12 LH571000J-15 otprom 1m sharp eprom sharp eprom "40 pin"
32-PIN

Abstract:
Text: LH571001/J CMOS 1M ( 128K x 8 ) OTPROM/ EPROM FEATURES • 131,072 x 8 bit organization â , Connections for CERDIP and DIP Packages 5-81 LH571001/J CMOS 1M ( 128K x 8 ) OTPROM/ EPROM Vcc GND Vpp O0 O , +6.5 V +12.75 V NOTE: X = H or L, H = Vim. L = Vil 5-82 SHARP» CMOS 1M ( 128K x 8 ) OTPROM/ EPROM , 0 ns SHARP 5-83 LH571001/J CMOS 1M ( 128K x 8 ) OTPROM/ EPROM AC TEST CONDITIONS PARAMETER MODE , voltage VlH 2.4 Vcc + 0.3 V 5-84 SHARP» CMOS 1M ( 128K x 8 ) OTPROM/ EPROM LH571001/J DC


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PDF LH571001/J LH571001 LH571001: 32-pin, 600-mil 28-pin LH571001J 32-PIN LH571001-15 LH571001J-12 LH571001J-15
ST27C1000

Abstract:
Text: Æ 7 SGS-THOMSON *7Æ. M©Mai[L©êinM®]0©S ST27C1001 1024K ( 128K x 8 ) CMOS UV ERASABLE PROM ADVANCED DATA 8 BITS OUTPUTS FAST ACCESS TIME 120ns. LOW “ CMOS” CONSUMPTION 50mA (MAX , programmable EPROM ideal­ ly suited for 8 -bit microprocessors systems requiring large programs. It is , ­ gurations. They are: • ST27C1011 is a page addressed 1024K ( 8 x 16K x 8 ) device, packaged in a 28 pin DIP for easy replacement of 64K and 128K standard EPROM versions. • ST87C1011 is the same device


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PDF ST27C1001 1024K 120ns. ST27C1001 ST27C1000
ST27C1000

Abstract:
Text: . DESCRIPTION The ST27C1001 is a high speed 1 Mbit UV erasable and electrically programmable EPROM ideally , -7/ SGS -THOMSON M©eœ[L[i(§Tr[HMo©s ST27C1001 1024K (128Kx 8 ) CMOS UV ERASABLE PROM ADVANCED DATA 8 BITS OUTPUTS FAST ACCESS TIME 120ns. LOW "CMOS" CONSUMPTION 50mA (MAX.) PROGRAMMING , page addressed 1024K ( 8 x 16K x 8 ) device, packaged in a 28 pin DIP for easy replacement of 64K and 128K standard EPROM versions. • ST87C1011 is the same device as the ST27C1011 with latched addresses


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PDF ST27C1001 1024K 128Kx 120ns. ST27C1001 ST27C1011 O-00-015 S-10656 ST27C1000 8-Bit Microprocessors bull thomson 1024K
1984 - TMS27C128

Abstract:
Text: · · · J AND N PACKAGES 128K EPROM Available With MIL-STD-883C Class B High-Reliability , -bit, ultraviolet-light erasable , electrically programmable read-only memories. A0­A13 E G GND NC NU PGM , . SNAP! Pulse programming The 128K EPROM and PROM are programmed using the TI SNAP! Pulse programming , ­REVISED JANUARY 1993 logic symbol PROM 16 384 × 8 EPROM 16 384 × 8 10 9 8 7 6 5 A0 A1 A2 A3 , TMS27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC128 131 072


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PDF TMS27C128 072-BIT TMS27PC128 SMLS128E TMS27C128s TMS27PC128s 27C128-12 27C/PC128-15 27C/PC128-20 27C128 Texas Instruments 27C128-12
2000 - FM27C010-Q120

Abstract:
Text: FM27C010 1,048,576-Bit ( 128K x 8 ) High Performance CMOS EPROM January 2000 FM27C010 1,048,576-Bit ( 128K x 8 ) High Performance CMOS EPROM General Description The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K -words of 8 , FM27C010 1 www.fairchildsemi.com FM27C010 1,048,576-Bit ( 128K x 8 ) High Performance CMOS EPROM , FM27C010 1,048,576-Bit ( 128K x 8 ) High Performance CMOS EPROM Programming Characteristics (Note 11


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PDF FM27C010 576-Bit 576-bit 128K-words 28-pin FM27C010N120 FM27C010-Q120 FM27C010Q120 pm o2 pin detail FM27C010V120
1984 - TMS27C128

Abstract:
Text: · · · J AND N PACKAGES 128K EPROM Available With MIL-STD-883C Class B High-Reliability , -bit, ultraviolet-light erasable , electrically programmable read-only memories. A0­A13 E G GND NC NU PGM , . SNAP! Pulse programming The 128K EPROM and PROM are programmed using the TI SNAP! Pulse programming , ­REVISED JANUARY 1993 logic symbol PROM 16 384 × 8 EPROM 16 384 × 8 10 9 8 7 6 5 A0 A1 A2 A3 , 77251­1443 L X P YY WW TMS27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY


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PDF TMS27C128 072-BIT TMS27PC128 SMLS128E TMS27C128s TMS27PC128s 27C128-12 27C/PC128-15 27C/PC128-20 27C128 Texas Instruments 27PC128 TI 27C128 27c128 27C128-12 PC128-15 SMLS128E-OCTOBER
27C128JL

Abstract:
Text: 7-12. Organization . . . 16K x 8 Single 5-V Power Supply Pin Compatible With Existing 128K MOS ROMs , Operating Temperature Ranges 128K EPROM Available With MIL-STD-883C Class B High-Reliabillty Processing , description The TMS27C128 series are 131 072-bit, ultra violet-light erasable , electrically programmable , V il CO D E vh vcc X X vcc X X * V|H DQ 1-D Q 8 Data Out Hl-Z Hl-Z , locations. Logic lows programmed into a PROM cannot be erased. SNAP! Pulse programming The 128K EPROM and


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PDF TMS27C128 072-BIT TMS27PC128 TMS27C128S TMS27PC128S 27C128JL L27C128 27PC128NL SMJ27C128 tms27c128j
27128 pin diagram

Abstract:
Text: only, 131,072-bit ultraviolet erasable and electrically programmable read-only memory ( EPROM ). The , intéT 27128A ADVANCED 128K (16Kx8) UV ERASABLE PROM 200 nsec Typical Access Time - HMOS ll*-E , ProgrammingTM Algorithm - Fastest EPROM Programming inteligent ProgrammingTM Mode -Automated Programming , 250 ns. This is compatible with high-performance microprocessors, such as Intel's 8 MHz iAPX 186 , ? Gnd a7 4 / l« .O A 8 5 Vpp C 1 *? c 2 *6 A5 *4 A3 a2 Ai *0 o0 Ot Oí God A, C 3 *« c 4 *b C 5 A. C


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PDF 7128A 16Kx8) 072-bit 072-BIT S7128A 27128 pin diagram intel EPROM 27128 PROGRAM 27128 INTEL 27128 27128 eprom intel 23/INTEL 27128A 27128 block diagram INTEL 27128A EPROM 27128A 27128 prom
1995 - interfacing of RAM and ROM with 8086

Abstract:
Text: x 8 bits), DS1230 (32K x 8 bits), and DS1245 ( 128K x 8 bits), use this fusion of technologies to , B Standard defines and upgrades from 2K x 8 in density to 128K x 8 . This standard accommodates RAM , # A[17:11] LE MA[10:0] A[10:1] A[17:1] CE CE CE CE 128K X 8 128K X 8 128K X 8 128K X 8 A D DS1245 OR DS1645 OE WE A D A D A D DS1245 , # OLE# CE CE CE CE 128K X 8 128K X 8 128K X 8 128K X 8 A D A D A


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PDF DS1245 DS1645 DS1230 DS1630 DS1650 interfacing of RAM and ROM with 8086 interfacing of memory devices with 8086 interfacing of RAM and ROM with 8088 interfacing intel 8086 with ram and rom 8088 microprocessor circuit diagram 386SL intel 8086 internal structure 8088 intel microprocessor pin diagram 8088 memory interface SRAM 8086 with eprom
MH25616RNA

Abstract:
Text: ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The MH25616RNA is 262144-word x 16-bit EPROM and consists of four industry standard 128K x 8 EPROMs and three decoder. FEATURES • 262144 word x 16 bit organization â , MITSUBISHI LSIs MH25616RNA, -15,-2 4194304-BIT(262144-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY , MH25616RN A, -15, - 2 4194304-BIT(262144-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM , -BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM AC WAVEFORMS ADDRESS Vpp Vcc WORD PROGRAMMING


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PDF MH25616RNA, 4194304-BIT 262144-WORD 16-BIT) MH25616RNA 16-bit MH25616RNA-15 150ns MH25616RNA-2 MH25616RNA-15 MH25616RNA-2
2002 - interfacing of RAM and ROM with 8086

Abstract:
Text: . EEPROM: Electrically Erasable /Programmable Read Only Memory. A significant disadvantage of the EPROM , devices, including the DS1220 (2K x 8 ), DS1225 (8K x 8 ), DS1230 (32K x 8 ), DS1245 ( 128K x 8 ), and DS1250 , upgrades from 2K x 8 in density to 128K x 8 . This standard accommodates RAM, ROM, UV EPROMs, and EEPROMs , megabyte main memory of 128K x 8 NV SRAMs (DS1245). Figure 5, Portable Applications: Intel 386SL CPU/NV , # CE1# CE0# A[17:11] LE MA[10:0] A[10:1] A[17:1] CE CE CE CE 128K X 8


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PDF DS1225 DS1245 DS1230 DS1250 interfacing of RAM and ROM with 8086 BEST BIOS PROGRAMMING AND DATA FOR EEPROM interfacing of memory devices with 8086 interfacing of RAM with 8086 8086 with eprom DS1225 dallas date code ds1250 NMOS DRAM dallas date code ds1230 8088 memory interface SRAM
2A153

Abstract:
Text: _ _ 30E 1 > ST27C1001 1024K ( 128K x 8 ) CMOS UV ERASABLE PROM ADVANCED DATA 8 BITS O U , . DESCRIPTION The ST27C1001 is a high speed 1 Mbit UV erasa ble and electrically programmable EPROM ideal ly , page addressed 1024K ( 8 x 1 6 K x 8 ) device, packaged in a 28 pin DIP for easy replacement of 64K and 128K standard EPROM versions. · S T 87C 1011 is th e sam e d evice as the ST27C1011 with latched addresses for design optimization in multiplexed bus environment. · ST27C 1000 is organized as 1 2 8 K x 8


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PDF ST27C1001 1024K 120ns. ST27C1001 2A153
1997 - 8M-BIT CMOS SERIAL FLASH GENERAL

Abstract:
Text: AT27BV010 128K x 8 120-150 ns 1M bit, 2.7-Volt to 3.6-Volt EPROM Now AT27BV1024 64K x 16 , x 8 90-150 ns 512K bit, 3-Volt EPROM Now AT27LV010A 128K x 8 90-150 ns 1M bit , 32K x 16 45-100 ns 512K, 5-Volt EPROM Now AT27C010,L 128K x 8 45-150 ns 1M bit, 5 , 128K x 16 55-150 ns 2M bit, 5-Volt EPROM Now AT27C040 512K x 8 70-150 ns 4M bit, 5 , -Volt to 3.6-Volt EPROM Now AT27BV040 512K x 8 150 ns 4M bit, 2.7-Volt to 3.6-Volt EPROM


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PDF AT27BV256 AT27BV512 AT27BV010 AT27BV1024 AT27BV020 AT27BV040 AT27BV4096 AT27BV800 1024K 8/512K 8M-BIT CMOS SERIAL FLASH GENERAL TQFP 100 PACKAGE AT27BV512 AT27BV4096 AT27BV256 AT27BV1024 AT27BV040 AT27BV020 AT27BV010 80C31 MICROCONTROLLER development board ATMEL
27C12B-20

Abstract:
Text: AV AV AV AV AV AV AV AV 10 EPROM 16 384 x 8 11 12 13 15 16 17 18 19 Q O Q1 25 AS , JUNE 1895 Organization . . . 16K x 8 Processed to MIL-STD-883, Class B Single 5-V Power Supply , erasable , electrically programmable read-only memories. These devices are fabricated using HVCMOS , 77251-1443 In s t r u m ents 8 -3 1 9 SMJ27C128 131072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY , |L V pp Vpp Vcc X X Vcc X X Vcc X X V|L 0^1725 8 -3 2 0 OOfl tDET 3TÔ 4


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PDF SMJ27C128 131072-BIT SGMS006E MIL-STD-883, 27C128-120 27C128-15 27C128-17 27C128-20 27C128-25 Di72-BIT 27C12B-20
Not Available

Abstract:
Text: REVISED JUNE 1995 I Organization . . . 16K x 8 Processed to MIL-STD-883, Class B Single 5-V Power , -bit, ultraviolet-light erasable , electrically programmable read-only memories. These devices are fabricated using HVCMOS , A? . 0 " 16 383 AV AV AV AV AV AV AV 13 [PWR DWN] & EN 10 EPROM 16 384 > 8 12 13 15 16 17 , 128K EPROM can be programmed using the Tl SNAPI Pulse programming algorithm illustrated by the , verified with V c c ~ Vpp = 5 V. Fast programming The 128K EPROM can be programmed using the Fast


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PDF SMJ27C128 131072-BIT S006E MIL-STD-883, 27C128-120 27C128-15 27C128-17 27C128-25 400-mV
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