The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
CAR1212FPBC-Z01A GE Critical Power AC/DC CONVERTER 12V 1200W
CAR1248FPXXXZ01A GE Critical Power CAR1248FP series rectifier, Input: 90VAC to 264VAC; Output: 48VDC @ 1200W; 5 VDC @ 0.5A
CAR1248FPBCXZ01A GE Critical Power CAR1248FP series rectifier, Input: 90VAC to 264VAC; Output: 48VDC @ 1200W; 5 VDC @ 0.5A
CAR1248FPBXXZ01A GE Critical Power CAR1248FP series rectifier, Input: 90VAC to 264VAC; Output: 48VDC @ 1200W; 5 VDC @ 0.5A
CAR1248TNBCXZ01A GE Critical Power CAR1248TN series rectifier, Input: 90Vac to 264Vac; Output: -54Vdc @ 1200W
CAR1248TNBXXZ01A GE Critical Power CAR1248TN series rectifier, Input: 90Vac to 264Vac; Output: -54Vdc @ 1200W
SF Impression Pixel

Search Stock (100)

  You can filter table by choosing multiple options from dropdownShowing 67 results of 100
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
1200-W Davies Molding LLC Farnell element14 250 £3.19 £2.68
1200-W Davies Molding LLC Newark element14 250 $2.03 $2.03
1200-W Davies Molding LLC element14 Asia-Pacific 250 $4.26 $3.51
1200-W Davies Molding LLC Allied Electronics & Automation 528 $3.43 $3.11
1200WF Pelican Products Inc Newark element14 6 $84.17 $84.17
1200WF Pelican Products Inc Master Electronics 2 $74.22 $57.09
34KM-K012-00W NMB Technologies Corporation Sager - $111.50 $100.29
34KM-K112-00W NMB Technologies Corporation Sager - $166.71 $146.26
35ME1200WX SANYO Semiconductor Co Ltd Avnet - - -
6304 12 00WP2 Legris RS Components 4 £37.31 £37.31
6306 12 00WP2 Legris RS Components 6 £153.76 £153.76
6326 12 00WP2 Legris RS Components 11 £8.27 £8.27
AD2S1200WST Analog Devices Inc Rochester Electronics 1,850 $28.20 $22.91
AD2S1200WSTZ Analog Devices Inc Rochester Electronics 1,141 $32.63 $26.52
AD2S1200WSTZ Analog Devices Inc Chip1Stop 3 $15.69 $15.69
ADUM1200WSRZ-RL7 Analog Devices Inc Rochester Electronics 7,118 $2.72 $2.21
ADUM1200WSRZ55 Analog Devices Inc Rochester Electronics 1,499 $2.99 $2.43
ADUM1200WTRZ Analog Devices Inc RS Components 403 £3.97 £3.64
ADUM1200WTRZ Analog Devices Inc Rochester Electronics 287 $4.51 $3.66
ADUM1200WTRZ-RL7 Analog Devices Inc Rochester Electronics 9,734 $3.98 $3.24
ADUM1200WURZ Analog Devices Inc RS Components 16 £5.10 £4.42
ADUM1200WURZ Analog Devices Inc RS Components 205 £4.76 £4.42
BABWBR1200W00 ARCSER Bristol Electronics 1 - -
BABWBR1200W22 ARCSER Bristol Electronics 5 - -
C2FAB06A1200W1 Panduit Corp Heilind Electronics - - -
C2FAB07A1200W1 Panduit Corp Heilind Electronics - - -
C2FAB08A1200W1 Panduit Corp Avnet - $142.89 $125.29
C2FAB08A1200W1 Panduit Corp Heilind Electronics - - -
CDBG1FA100-1200-WL-B53L SMC Corporation of America Allied Electronics & Automation - $717.60 $717.60
HP03S1200WJ ZETTLER Magnetics Inc New Advantage Corporation 246 $9.56 $8.69
HP03S1200WJ ZETTLER Magnetics Inc Future Electronics 307 $4.78 $4.23
IDSD-08-D-12.00-W06 Samtec Inc Sager - $8.24 $6.28
KRL12-00W2 SMC Corporation of America Allied Electronics & Automation - $5.60 $5.60
KU12-00WCNUV Eaton Corporation Avnet - $15.39 $13.69
KUSC12-00WCPT Eaton Bussmann Allied Electronics & Automation - $29.44 $29.44
KUSC12-00WCPT Eaton Corporation Avnet - $26.79 $23.79
KUSC12-00WCPT Eaton Bussmann Sager - $24.21 $23.45
MKRFOX1200 WITHOUT ANTENNA - ONLY EUROPE Arduino TME Electronic Components 46 $41.35 $41.35
N2EOR1CA1200W1 Panduit Corp Heilind Electronics - - -
N2EOR1CA1200W1 Panduit Corp Sager - $239.47 $212.86
P4040B1200W Siemens Allied Electronics & Automation - $373.69 $355.00
R161.311.200W Radiall Avnet - $44.99 $19.99
R161.331.200W Radiall Avnet - $31.29 $15.39
R161311200W Radiall Richardson RFPD - - -
R161331200W Radiall Richardson RFPD - - -
R161461200W Radiall Richardson RFPD - - -
R164331200W Radiall Richardson RFPD - - -
R185A031200W Radiall Richardson RFPD - - -
R299701200W Radiall Richardson RFPD - $13.86 $13.09
S2EOR1CA1200W1 Panduit Corp Heilind Electronics - - -
S3040B1200W Siemens Allied Electronics & Automation - $303.15 $288.00
SF-1206S1200W-2 Bourns Inc element14 Asia-Pacific 3,450 $2.32 $1.14
SF-1206S1200W-2 Bourns Inc Chip1Stop 3,500 $1.54 $1.09
SF-1206S1200W-2 Bourns Inc Farnell element14 3,450 £1.61 £0.71
SF-1206S1200W-2 Bourns Inc Newark element14 3,450 $1.92 $0.99
SF-2410F1200W-2 Bourns Inc Farnell element14 1,970 £35.54 £23.28
SF-2410F1200W-2 Bourns Inc element14 Asia-Pacific 1,970 $2.14 $1.08
SF-2410F1200W-2 Bourns Inc Chip1Stop 2,000 $1.42 $1.00
SF-2410F1200W-2 Bourns Inc Newark element14 1,970 $1.94 $1.03
V42254B1200W910 TE Connectivity Ltd Sager - - -
WHP3000 1200W Weller Hand Tools GmbH element14 Asia-Pacific 3 $2134.20 $2134.20
WHP3000 1200W Weller Hand Tools GmbH Farnell element14 8 £1419.00 £1315.00
ZP01S1200WE ZETTLER Magnetics Inc Future Electronics - $3.28 $3.28
ZP02S1200WF ZETTLER Magnetics Inc Future Electronics - $4.02 $4.02
ZP03S1200WE ZETTLER Magnetics Inc Future Electronics 24 $4.19 $3.35
ZP05S1200W ZETTLER Magnetics Inc Future Electronics - $7.34 $5.87
ZP05S1200WB ZETTLER Magnetics Inc Future Electronics - $6.00 $4.80

No Results Found

Show More

1200-W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - BSM25GP120 b2

Abstract: BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
Text: IC A IGBT Inverter IC VCEsat A V Ptot W RthJC K/ W VRRM V Rectifier Diodes RthJC K/ W Id A Vto V rT m @ 80°C Low Loss 2. Generation FB6R06VL4 FB10R06VL4 , ,8 17 17 15 10,5 VCES V Tvj = 150°C Brake Chopper IC, IGBT RthJC A K/ W Outline , Ptot W RthJC K/ W Type Outline / page VCES V IC A Outline / page @ 80°C @ , IC RthJC A K/ W VCEsat V VRRM V Tvj = 25°C BSM10GP60 BSM15GP60 BSM20GP60 BSM30GP60


Original
PDF kuka-2003-inhalt FB6R06VL4 FB10R06VL4 FB10R06KL4 FB10R06KL4G FB10R06KL4G FP10R06KL4 FP10R06KL4 FB15R06KL4 FB15R06KL4 BSM25GP120 b2 BSM15GP120 b2 BSM50GD120DN2E3226 FS10R06VL4_B2 BSM35GP120 F4-150R12KS4 FS10R06VL4 BSM30GD60DLCE3224 FZ1200R16KF4 BSM15GD120DN2E3224
120-12N01

Abstract: 120-16NO1 vub 70 160-16N 71-16N01 thyristor BT 200 B6HKF 3020N half controlled rectifier
Text: 40 ns, B6U Type V 45°C 10 ms A 200 per Chip V 1.65 3.3 mQ 18.2 92.4 °C 150 150 per Chip K/ W , p ttvJK Package style Outlines paqes 54,55 Fig. 4 7 W eiqht = 35 a New VU E 50-12N 01 VUE 30-20N 01 V 1200 2000 V 400 590 A 50 30 °C 85 85 K/ W 1.25 75 3~ Rectifier Bridges , 125 2.3 0.9 1.4 0.9 2.9 1.1 2.0 1.1 34 85 Fig. 45 W eight = 28 3~ Half Controlled Rectifier Bridges, B6HK Type v RRM v vRMS *dAV Tc=100°C A 12 V W Z 1 2 -1 2 io 1 W Z 1 2 -1 4


OCR Scan
PDF 50-12N 30-20N 25-12go2 25-14go2 25-16go2 36-12go2 36-14go2 36-16go2 51-12N 51-16N 120-12N01 120-16NO1 vub 70 160-16N 71-16N01 thyristor BT 200 B6HKF 3020N half controlled rectifier
2002 - BSM50GD120DN2E3226

Abstract: bsm25gp120 b2 FF300R12KE3 FZ1200R16KF4 FZ1600R12KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
Text: /60 90/90 130/120 RthJC °K/ W per arm outline / page 0,046 0,032 0,025 Type , . RthJC °K/ W per arm outline / Page Standard 2. Generation FS300R12KF4 FS400R12KF4 1200 , =25°C Tvj=125°C typ. typ. 3,3 3,5 170/90 240/140 RthJC °K/ W per arm 0,04 0,032 Type , =25°C Tvj=125°C typ. typ. RthJC °K/ W per arm outline / page 1700 1700 1700 1700 400 , / page 0,026 480/255 960/510 650/500 RthJC °K/ W per arm IH4/60 IH7/61 0,026 IH4


Original
PDF FF400R12KF4 FF600R12KF4 FF800R12KF4 FF400R12KL4C FF600R12KL4C FF800R12KL4C FF600R12KE3 FF800R12KE3 FF1200R12KE3 FZ800R12KS4 BSM50GD120DN2E3226 bsm25gp120 b2 FF300R12KE3 FZ1200R16KF4 FZ1600R12KF4 FF400R33KF2 BSM100GB60DLC BSM50GD60DLC FZ600R12KE3S FF600R12KE3
TRANSISTOR C 460

Abstract: 1di200 transistor r 606 j
Text: High-speed sw itching 1000 volts class pow er transistor modules · P o w e r tr a n s is to r s an d free w h e e l d io d e s are b u ilt in to on e pa ckage. · S u ite d f o r m o t o r c o n t r o l a p p li c a t io n s w i t h 380 to 440V AC in p u ts · W id e S O A w i t h h i g h - s p e e d s w i t c h in g Device ty p e Venn Velo V olts 2DI30Z-100 2DI50Z-100 2DI75Z-100 2DI100Z-100 , 1000 VuX (sus) Volts 1000 1000 1000 1000 1000 1000 1000 l( P < cont. A m ps. W atts 30 50 75 100


OCR Scan
PDF 2DI30Z-100 2DI50Z-100 2DI75Z-100 2DI100Z-100 2DI150Z-100 1DI200Z-100 1DI300Z-100 6DI30Z-120 6DI50Z-120 TRANSISTOR C 460 1di200 transistor r 606 j
Not Available

Abstract: No abstract text available
Text: 318 319 322 323 Ppp ( W ) 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 1200 , Section is org an ized by ascending Ppp ( w atts), followed by ascending V w m (volts) Part Specifics N otes 1. Pulse W idth is sp ecified as type: 1) iO;1DOOusec, 2) R/20 usee, or 3) 150 nsec General Notes , atasheets can be uotain ed fro m M icro s em i's W eb site o r Fax on Dem and System by specifying the Data Sheet ID Fax On Demand (800) 713-4113 TSB-19 http:// w w w .m icrosem i.com


OCR Scan
PDF 2KE10C 2KE10CA 2KE11C 2KE11CA 2KE12C 2KE12CA 2KE13C 2KE13CA 2KE14C 2KE14CA
100E-120

Abstract: EVK75-050 1DI150E120 1di150 1di100 1di15 1di75 1di50 EVM31-050A m201
Text: fre e w h e e l d io d e and fast recovery d io d e w irin g . Device type 1DI50E-120 1DI50F-120 , 1200 1200 1200 1200 1200 1200 1200 le Pc cont. Am ps. W atts 50 50 50 75 75 75 100 100 100 150 150 150 400 400 400 500 500 500 800 800 800 1000 1000 1000 hFE S w itching tim e (Max.) le VcE Am ps , M206 M206 M206 M206 M206 M207 M207 M207 M207 M207 M207 Net w eight Grams 265 265 265 265 265 265 550 , . D5 Fig. D6 Fig. D7 Fig. D5 Fig. D6 Fig. D7 600 volts class power transistor modules · P o w er


OCR Scan
PDF 2E367 1DI50E-120 1DI50F-120 1DI50H-120 1DI75E-120 1DI75F-120 1DI75H-120 100E-120 1D110OF-120 1DI100H-120 EVK75-050 1DI150E120 1di150 1di100 1di15 1di75 1di50 EVM31-050A m201
ic 1200 p 60

Abstract: 1di50 1di200
Text: BIPOLAR TRANSISTOR MODULES Ratings and Specifications lO 600 volts class high hFE p o w e , in g in in v e r t e r u s in g h ig h hn p o w e r t r a n s i s t o r m o d u l e Device type VrBO V olts Van V o lts 600 600 600 Va o (sus) V olts 450 450 450 Ic Pr con t. A m p s . W atts 30 , 2.5 2.5 S w i t c h i n g t i m e ( M a x .) t.m t,u ti jis ec . t-isec. (isec. 3.0 3.0 3.0 8.0 , 1:1 1200 volts class high hFE p o w e r tran sisto r m odules · Because th is m o d u l e has h ig


OCR Scan
PDF 1DI30M 1DI50M 6DI30M 6DI50M ic 1200 p 60 1di50 1di200
CISPR22

Abstract: SDS120PS12 SDS120 EN61000-4-6 EN61000-4-5 EN61000-4-4 EN61000-4-3 EN61000-4-2 EN61000-3-3 SDS120PS28B
Text: to Output 1500 VAC Input to Ground 500 VAC Output to Ground · 80 kHz typical · 4.87 W /In3 · PFD , 120.0 120.0 120.0 120.0 120.0 120.0 W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W Output 1 Imin Imax 0.00 A 22.00 A 0.00 A


Original
PDF SDS120 SDS120S SDS120M SDS120 CISPR22 SDS120PS12 EN61000-4-6 EN61000-4-5 EN61000-4-4 EN61000-4-3 EN61000-4-2 EN61000-3-3 SDS120PS28B
1di200

Abstract: M105
Text: 1000 volts c la ss pow er tran sisto r m odules · T e r m in a ls la y o u t in w h ic h d riv e w ir in g a n d p o w e r w ir in g d o not c o m e a c c ro s s . · S u ite d for m o to r co n tro l a p p lic a tio n s w ith 380 to 440V v o lts in p u ts. Device type VcBO VcEO VcFX Ic Pc h FF , sisto r m odules · P o w e r t ra n s is t o r s a n d free w h e e l d io d e s a re b u ilt into o n e p a ck a g e . · S u ite d fo r m o to r co n tro l a p p lic a tio n s w ith 440 to 480 V A C in


OCR Scan
PDF 2DI30D-100 2DI50D-100 2DI75D-100 2DI100D-100 2DI150D-100 2DI200D-100 1DI300D-100 1DI400D-100 2DI30A-120 2DI50A-120 1di200 M105
B2HKF

Abstract: B2U 250 22-16 diode B2HKF 250 40-08N 105-14N 160-14N S 4012 R 13-12A02 4508n
Text: ; ! L - w - L -H - 1 ! 0 *FSM V T0 rT ^ th J C thJK IdAV ^ @ TC p RSM Package style Fig. No. 40 Fig. 12 SOT-227B miniBLOC W eight = 30 g Outlines pages 52,54,55 V VBO 13-12A 02 VBO 13-16A , mQ 17 14 8 `C 150 150 150 per Chip per Chip Module Module K/ W K/ W 5.6 1.4 3.0 0.75 2.8 0.7 6.0 , 3.4 3.4 40 35 85 400 0.85 12 150 50 TO Fig. 50 W eight = 135 g VBO , . 51 W eight = 260 g 45 100 550 0.8 8 150 -0.3625 2.6 1.45 -0.475 2.84


OCR Scan
PDF OT-227B 3-12A 3-16A 5-12A 5-16A 55-0B 55-12io7 55-14io7 55-16i07 55-16io7 B2HKF B2U 250 22-16 diode B2HKF 250 40-08N 105-14N 160-14N S 4012 R 13-12A02 4508n
CISPR22

Abstract: EN61000-3-3 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5 EN61000-4-6 SDS120
Text: Output 1500 VAC Input to Ground 500 VAC Output to Ground · PFC 100 kHz, PWM 67 kHz · 4.87 W /In3 · , V 5.0 V 5.0 V 5.0 V 5.0 V 5.0 V 5.0 V 5.0 V 5.0 V 5.0 V W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W W Output 1 Imin Imax


Original
PDF SDS120 SDS120S SDS120M 17-Apr-07 SDS120 CISPR22 EN61000-3-3 EN61000-4-2 EN61000-4-3 EN61000-4-4 EN61000-4-5 EN61000-4-6
IGBT FF 300

Abstract: M-604 M215 2MB125F-120 M116 collmer igbt 6MBI8F-120
Text: R th IGBT °C/ W Diode °C/ W Vf Max. Volts trr Pkg. Max. usee Watts usee , Amps Switching time (max.) to n to fl tf R th R th IGBT °C/ W Diode "C/ W Vf Max , 2.5 2.5 Amps 8 15 25 50 Switching time (max.) to n to ff tf R th R th IGBT "C/ W 2.080 1.040 0.568 0.347 Diode X / W 3.300 2.010 1.330 0.666 Vf Max. Volts 2.5 2.5 2.5 2.5 trr Pkg , 15 25 25 Switching time (max.) to n to ff tf R th R th IGBT °C/ W 2.080 1.040 0.500 0.500


OCR Scan
PDF 2MB125F-120 2MBI50F-120 2MBI75F-120 2MBI100F-120 2MBI150F-120 1MBI200F-120 1MBI300F-120 6MBI8L-120 6MBI15L-120 6MBI25L-120 IGBT FF 300 M-604 M215 M116 collmer igbt 6MBI8F-120
2015 - mosfet equivalent

Abstract: mosfet base inverter with chargers circuit SKiiP 83 AC 12 i t 46 fy074pa SKIIP 33 UPS 06 V23990-P769-A-PM 25AC12T4v semikron skiip 83 SKiiP 31 AC 12 T2
Text: customers want and need. Vincotech, Your Reliable Partner. 07 Rth(K/ W ) 2.0 1.5 1.0 0.5 IGBT , Phase change temperature Value Unit 3.4 W /mK +45 °C order codes Example order code for , Thermal conductivity 0.81 W /mK order codes Example order code for different lids and applied , ) flowNPC 12w (P. 100 I 101) 3xflowNPC 4 w (P. 100 I 101) flowMNPC 2 (P. 106 I 107) flowMNPC 4w (P , design Housing / flow 2 17 mm IGBT3 IGBT3 w /o NTC 10-F106R6A050SB-M435E08 600 50 10


Original
PDF
Not Available

Abstract: No abstract text available
Text: to ': lc Pc Cont. P tr IG B T Volte Amps W atts 200 1200 1500 1200 300 2100 300 :2100y. 1200 1200 300 ’ 2100 .[fita i-M 400 3100 w 1200 400 3100 400 3100 .,.:1200J:, 600 4100!; 1 , 1-2 13 0.50 300 600 1 .2 1.5 9-50 300 1.5 600 12 0.50 400 800 12 . W : 0.50 400 1.2 800 13 0.50 400 800 1,2 13 0.50 600 1200 23 ~ w 0.30 RTH Diode °C/ W 0.22 0.16 0.16 , .) Collector Rth ton ton tf Current IGBT Diode lc Amps psec. psec. psec. lc Pulse °C/ W "Crtv 100


OCR Scan
PDF 2100y. 1200J: 1MBI200N-120 1MBI300N-120 1MBI300NN-120 1MBI300NP-120 1MBI400N-120 1MBI400NN-120 1MBI400NP-120 1MBI600P-120
a 1712

Abstract: DSA117-12 DSA117-16 110-16F
Text: jM ^ th J A thCK Package style o 2 See outlines D > LL on page 40, 41 12 Fig. 12 W eight = 0.8 g , 2.3 T a= 4 5 C A 7 7 A 110 110 10 ms V 0.8 0.8 m íi 67 67 °c 150 150 K/ W 80 80 K / W 1.6 3.6 T a = 45 C 2.5 7 7 120 120 0.85 0.85 43 43 180 180 30 30 13 Fig. 13 W eight = 1.5 g 4.1 1 2 àv DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A , 1.5 1.9 _J 3_ ~ 4~ Fig. 2 TO-220AB W eight = 4 g 11 11 4.5 18 18 250 250


OCR Scan
PDF I75-16 I75-18 110-16F 110-18F DSA1110-12 I110-16F DSA1110-18 -28UNF2A DQ-205AC a 1712 DSA117-12 DSA117-16
1.2KE28A

Abstract: 1.2KE14A 1.2KE48A STD 357
Text: 308 309 312 313 316 317 320 321 324 325 332 333 336 337 340 341 352 353 356 357 Ppp ( W ) I Pulse , (watts), followed by ascending Vwm (volts) Pan Specifics Notes: 1. Pulse W idth Is specified as fype: 1 j , Mount, "DIE" - Die Form 3. Datasheets can be obtained from Mlcrosem l's W ebsite or Fax on Demand System by specttying the Data Sheet ¡D Fax On D em and (800) 713-4113 TVS-40 h ttp :// w w w .m


OCR Scan
PDF 2KE14 2KE14A 2KE15 2KE15A 2KE16 2KE16A 2KE17 2KE17A 2KE18 2KE18A 1.2KE28A 1.2KE14A 1.2KE48A STD 357
62-08N

Abstract: b6u 380 125-14N 190-08N 60-08N 190-12N 11016N 10MSA 80-16N01 10016n
Text: to rT D 1hJA1 p thJA2 Package style Outlines page 55 Fig. 58 W eight = 130 g Fig. Fig. Fig. Fig. 59a 59b 59b 59b W eight = 150 W eight = 300 W eight = 300 W eight = 300 g g g g A = A node C = C athode < 2 > V 1.7 2.55 4.25 12 mQ 16 90 215 1800 °C 150 150 150 150 150 150 150 150 K/ W 1.9 1.7 4.2 2.7 K/ W 7.1 8.0 10.0 8.7 - CD fo r oil-co oling w ith coo lin g plate, T A = 3 5 3C D ata a c c o rd in g to IEC 60 7 4 7 -2 /6 fo r natural air cooling w ithout cooling plate, T a


OCR Scan
PDF E0221 155-12N01 155-16N01 160-08N 160-12N 160-14N 160-16N 125-12N 125-14N 125-16N07 62-08N b6u 380 190-08N 60-08N 190-12N 11016N 10MSA 80-16N01 10016n
LT 220 diode

Abstract: No abstract text available
Text: . ton usee. 1.0 1.0 1.0 : 1.2 1.2 Pkg. °C/ W nsec. 0.35 0.35 0.35 : : :â , . °C/ W 2.50 2.50 1.56 2.08 1.66 1.08 1.32 0.89 1.14 0.73 0.56 0.40 It nsec. 0.35 0.35 0.35 0.35 0.35 0:35 0.35 0.35 0.35 0.35 0.35 035 RTH IGBT VF °C/ W 5.00 5.00 , . Max. Pkg. °C/ W 5.00 3.57 2.77 2.27 1.78 1.14 Volts lisec. 3.0 3.0 3.0 3.0 , ) <0 61) 4 .5 (0 .1 8 ) 1.32 (O.OS) (0 59) o3.2 <00 13) 7\ W 0 6 9 n B ee â


OCR Scan
PDF 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 TQ-22Q O-220 LT 220 diode
skiip gb 120

Abstract: semikron skiip 1212 GB 120 semikron skiip 09 skiip gd 120 semikron 100 gb 06 semikron IGBT skiip 602 semikron skiip 400 gb SKIIP GD semikron skiip 3 gb 120 skiip 31 ac 12
Text: Pack Type ® Options; W . Vces control connection W = wire F = fibre optic T a Temp.sense Pi«0 VcEsit @ > TRISTO @ Ic 25 °C =25°C @ Tam b = 35 °C typ./c#iip W V lc9> Rtf* IGBT /D iode5 1 °C/ W SKiiPPACK 2 -GB SKiiP 462 GB 060 250 W /WT * SKiiP 662 QB 060 251 W /WT * SKiiP 962 GB 060 350 W /WT-F/FT 6 1 SKiiP 1262 GB 060 451 W /WT-F/FT6 1 SKiiP 402 GB 120 201 W /WT SWP 612 GB 120 203 W /WT SKiiP 602 GB 120 301 W /WT-F/FT SKiiP 912 GB 120 303 W /WT-F/FT SKiiP 912 GB 120 031 SKiiP 802 GB 120 401 W /WT-F/FT SKiiP


OCR Scan
PDF Vce/10 14-Dins ai3bb71 skiip gb 120 semikron skiip 1212 GB 120 semikron skiip 09 skiip gd 120 semikron 100 gb 06 semikron IGBT skiip 602 semikron skiip 400 gb SKIIP GD semikron skiip 3 gb 120 skiip 31 ac 12
M615

Abstract: 1DI300ZP-120 1DI400MP-120 1di200
Text: pow er transistor modules · S u ite d f o r m o t o r c o n t ro l a p p li c a t io n s w i t h 575V AC in p u t. · P o w e r t r a n s i s to r s an d fre e w h e e ls are b u ilt in to on e package. · W id e S O A w i t h h i g h - s p e e d s w i t c h in g Device ty p e VcB O V CEO V o lts , 1400 1400 1400 1400 1400 (sus) V olts 1200 1200 1200 1200 1200 -Pc Ic cont. A m ps. W , olts 50 75 100 150 300 2.8 2.8 2.8 2.8 2.8 S w itch ng tim e (M ax.) t,m tsltj ti Package


OCR Scan
PDF 2DI50Z-140 2DI75Z-140 2DI100Z-140 2DI150Z-140 1DI300Z-140 6DI10MS-050 6DI15S-050 6DI15MS-050 6DI20MS-050 M615 1DI300ZP-120 1DI400MP-120 1di200
Not Available

Abstract: No abstract text available
Text: 600 volts class pow er transistor modules for DC chopper • P o w e r transistors and free w h e , cont. Amps. W atts S w itching tim e (Max.) hFE min. le VcE Amps. Volts ton tstg , s using a ch o pp er co n verter T h e typ e d ep en ds on fre e w h e e l diode and fast reco very diode w irin g . Devint! typti VcBO VcEO V cex Pc Ic cont. Amps. W atts Sw itching , on free w h e el d io d e and fast recovery diode w irin g . Dfivicn lypo VcBO Ic PC cont


OCR Scan
PDF 1DI50H-055 1DI50K-055 1DI75E-055 1DI50F 1DI50H-120 1DI75F 1I3I75H 0Q0372L,
1MBI30L-060

Abstract: 6MBI30FA-060 collmer igbt 2mbi200f 2mbi25f 1MBI50L-060
Text: 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IGBT °C/ W 0.568 0.431 0.347 0.231 0.174 0.116 0.116 0.087 Diode °C/ W 1.330 0.888 0.666 0.444 0.333 0.222 0.222 0.167 VF Max. Volts 2.5 2.5 2.5 , toff tf lc Amps usee. usee. jisee. R th R th Vf IGBT °C/ W Diode °C/ W Max. Volts , 1.0 R th R th IGBT °C/ W 3.130 2.080 1.560 1.040 1.040 0.568 0.568 0.431 0.431 0.347 0.347 0.227 0.208 Diode °C/ W 4.150 3.300 3.010 2.010 2.010 1.330 0.1330 0.888 0.888 0.666 0.666 0.417 0.313


OCR Scan
PDF 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 1MBI300F-060 1MBI400F-060 6MBI8L-120 6MBI15L-120 1MBI30L-060 6MBI30FA-060 collmer igbt 2mbi200f 2mbi25f 1MBI50L-060
Not Available

Abstract: No abstract text available
Text: 100 150 0.8 0.8 08 0*8 0:8 i4 W 1800 2.5 2.5 200 300 0.8 m - s - R th RTH VF IGBT Diode Max. Max. Pkg. °C/ W -c/ w Volts usee. 15 1.5' 1.5 , 15 10 w 0.087 0.069 O n# 0.111 2.5 2.5 0.35 0.35 M116 M116 R th RTH VF far Pkg. fax* fag " fa nsec. n»*c. nsec. IGBT Diode Max. Max. °C/ W °C/ W Volts nsec. ’ 1200 VOLT, L-SERIES MODULES • High speed switching Device Type


OCR Scan
PDF 2MBI25F-120 2MBI50F-120 2MBI75F-120 BI100F-120 2MBI150F-120 1MBI200F-120 1MBI300F-120
mcc44-16i01b

Abstract: MCC44-18I08B MCC44-14I08B MCD40 MCC7216i01B MCC44-16-I01B MCD255-16IO1 MCD250-08IO1 mcd162-16io1 MCC44-16I08B
Text: Chip per Chip K/ W K/ W Outlines pages 52,53,54 Fig. 12 SOT-227B m iniBLOC W eight = 30 g 0.85 0.85 125 125 0.6 0.53 0.5 0.2 500 1150 Fig. 26/27 T O -2 40A A W eight = 90 g 1700 2250 0.85 0.2 0.2 Fig. 32 W eight = 125 g 0.8 130 85 300 5500 165 181 85 85 300 300 6000 6000 0.8 0.88 1.6 1.15 125 125 0.155 0.155 0.07 0.07 Fig. 36 W eight = 320 g 130 0.157 140 0.129 Fig. 37 W eight = 750 g 0.82 140 0 .112 0.04 36 D ata acc o rd


OCR Scan
PDF MCD26-08 CD26-12io8B MCD26-14 CD26-16io8B CD40-12io6 MCD40-16 MCD44-08 MCD44-12 CD44-14io8B CD44-16io8B mcc44-16i01b MCC44-18I08B MCC44-14I08B MCD40 MCC7216i01B MCC44-16-I01B MCD255-16IO1 MCD250-08IO1 mcd162-16io1 MCC44-16I08B
2MBI150NC-060

Abstract: 1MBI400NP-120 2MBI50N-120
Text: 600 Pc Per IGBT V ce (sat) V ge=15V Max. V olts 2.8 2.8 lc Am ps 600 600 S w itching tim e (max , IGBT °C/ W 0.063 0.063 Diode °C/ W 0.11 0.11 Vf Max. V olts 3.0 3.0 trr Pkg. Max. usee 0.3 0.3 M128 M129 W atts 2000 2000 usee. 1.2 1.2 600 VOLT, N SERIES DUAL MODULES Device type , ps 100 150 200 300 300 400 600 600 800 R th R th IGBT °C/ W 0.50 0.39 0.31 0.21 0.21 0.16 0.10 0.10 0.08 Diode °C/ W 1.60 1.00 0.80 0.53 0.53 0.40 0.27 0.27 0.20 Vf Max. Volts 3.0 3.0 3.0


OCR Scan
PDF 1MBI600NP-060 1MBI600NN-060 2MBI50N-060 2MBI75N-060 2MBI100N-0m 2MBI150NC-060 1MBI400NP-120 2MBI50N-120
Supplyframe Tracking Pixel