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VA2101

Abstract: No abstract text available
Text: MCP (Multi-Chip Package) FLASH MEMORY & SRAM M 1B IIBIIBIIB II1I11111111II1I1I1I1I1IIM M 1M M M M M M M M M M M M M M M M M M M M M 11IIIIIIIIIIIIIIIIIIIIIIIIIIIIB |B I1I111111111111111111 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM M B 8 4 V A 2 1 0 0 - i o / M B 8 4 V A 2 1 0 1 -10 FEATURES · Power supply voltage of 2.7 to 3.6 V · High performance 100 ns maximum access time · Operating Temperature -2 0 to +85°C - FLASH MEMORY · Minimum 100,000 write/erase cycles · Sector erase architecture One


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PDF II1I11111111II1I1I1I1I1IIM 11IIIIIIIIIIIIIIIIIIIIIIIIIIIIB I1I111111111111111111 MB84VA2100: MB84VA2101: F9805 VA2101
67FFFH

Abstract: F9805 II1I11
Text: MCP (Multi-Chip Package) FLASH MEMORY & SRAM 1BBIIBIIBIIB II1I111111111I1I1I1I1I1IIM M 1M M M M M M M M M M M M M M M M M M M M M 11IIIIIIIIIIIIIIIIIIIIIIIIIIIIB |B1I111111111111111111I 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM MB84VA2106-10/MB84VA2107-io FEATURES · Power supply voltage of 2.7 to 3.6 V · High performance 100 ns maximum access time · Operating Temperature -2 0 to +85°C - FLASH MEMORY · Minimum 100,000 write/erase cycles · Sector erase architecture One 8 K word, two 4 K


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PDF II1I111111111I1I1I1I1I1IIM 11IIIIIIIIIIIIIIIIIIIIIIIIIIIIB B1I111111111111111111I MB84VA2106-10/MB84VA2107-io MB84VA2106: MB84VA2107: F9805 67FFFH F9805 II1I11
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