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Part Manufacturer Description Datasheet Download Buy Part
DF1B-11ES-2.5RC Hirose Electric Co Ltd Board Connector, 11 Contact(s), 1 Row(s), Female, 0.098 inch Pitch, Crimp and IDC Terminal, Locking Mech, White Insulator, Socket, ROHS COMPLIANT
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
11ES2-TA2R5 NIHON1 Bristol Electronics 5,000 - -
DF1B-11ES-2.5RC Hirose Electric Co Ltd Heilind Electronics - - -
DF1B-11ES-2.5RC Hirose Electric Co Ltd Heilind Electronics - Asia - - -
DF1B-11ES-2.5RC Hirose Electric Co Ltd Sager - $0.21 $0.19
MEMX1-1ES24 ABB Low Voltage Products and Systems Allied Electronics & Automation - $278.75 $278.75
P1-1ES/24V3NC ABB Low Voltage Products and Systems Allied Electronics & Automation - $71.93 $68.52

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11ES2 datasheet (5)

Part Manufacturer Description Type PDF
11ES2 EIC Semiconductor Silicon Rectifier Diodes Original PDF
11ES2 Nihon Inter Electronics 200 V, diode Original PDF
11ES2 Others The Diode Data Book with Package Outlines 1993 Scan PDF
11ES2 Nihon Inter Electronics SILICON RECTIFIER DIODE Scan PDF
11ES2 Nihon Inter Electronics General Purpose Silicon Rectifier Diode Scan PDF

11ES2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - 11ES2

Abstract: No abstract text available
Text: DIODE FEATURES Type : 11ES2 OUTLINE DRAWING * Miniature Size , 0.98 1.0 Approx Net Weight:0.17g 11ES2 200 400 Ta=25°C *1 50Hz Half Sine Wave Resistive Load Ta , Mounted (L=3mm,Print Land=5x5mm,Both Sides) 11ES2 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 11ES2 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 , POWER DISSIPATION 11ES2 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE


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PDF 11ES2 11ES2
2001 - 11ES2

Abstract: No abstract text available
Text: DIODE Type 11ES2 OUTLINE DRAWING , 45 Ta=50 ,*2 1.57 50Hz , 1, Half Sine Wave,1cycle,Nonrepetitive 40 + 150 40 + 150 11ES2 , ) FORWARD CURRENT VS. VOLTAGE 11ES2 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj , ) AVERAGE FORWARD POWER DISSIPATION 11ES2 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W , . 11ES2 1.2 AVERAGE FORWARD CURRENT (A) 1.0 HALF SINE WAVE 0.8 0.6 0.4


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PDF 11ES2 11ES2
11ES2

Abstract: 11ES1 11ES4 11ES6 11ES8
Text: SILICON RECTIFIER DIODE 1A/100—800V 11ES1 11ES2 11ES4 11ES6 11ES8 FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability ° 26mm , ) Approx. Net Weight : 0.17 Grams Voltage Rating TYPE Symbol\^ 11E S1 11ES2 11 ES 4 11ES6 11ES8 Unit , VRRM Tj-25"c 11ES1- 11ES2 50, VA 11ES4—11ES8 10 Thermal Resistance, junction to ambient Rth , x 5 mm (îvfc Nhon Inter Bactronlcs Comoro««! 484 bblS123 GDDlbSb 24D ■llESl 11ES2 11ES4


OCR Scan
PDF A/100â 11ES1 11ES2 11ES4 11ES6 11ES8 11ES6 11ES8 LL1S123
11ES2

Abstract: No abstract text available
Text: Grams \ TYPE 11ES1 100 250 11ES2 200 400 Condition 180° sinusoidal wave conduction P.C. Board mounted , °C T j -25-C 11ES1- 11ES2 11ES4 ~11ES8 Max. 1.0 . 50 10 110 Unit V uA °c/w P.C. Board , only (fÜT; »mn Intw Bectronfcs Corporation BOO 11ESI 11ES2 11ES4 11ES6 11ES8 FIG .I-FO R W A


OCR Scan
PDF 11ES4 11ES1 11ES2 11ES4 11ES8 -25-C 11ES1- 11ES8
2001 - 11ES2

Abstract: No abstract text available
Text: DIODE 11ES2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.17g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 11ES2 VRRM VRSM Average Rectified Output , 50 1.0 140 110 Unit µA V °C/W 11ES2 OUTLINE DRAWING (Dmensions in mm) Nihon


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PDF 11ES2 11ES2
2005 - 11ES1

Abstract: 11ES2
Text: 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free , SYMBOL 11ES1 11ES2 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 200 , Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 11ES1 - 11ES2 ) PEAK


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PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202, 11ES2
11E51 11E52 11E54

Abstract: 11E52 11ES2 11ES8 Low Forward Voltage Diode silicon rectifier diode 11ES6 11ES4 11ES1 Diode BFC 110
Text: SILICON RECTIFIER DIODE 1A/100—800V 11ES1 11ES2 11ES4 11ES6 11ES8 FEATURES o Miniature Size " Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability » 26mm and 52mm Inside Tape Spacing Package Available MAX U1A 0.54C021) * Ü 0.60(.024) 0.54(.021) DIA . , VRRM T j - 25°C 11ES1~ 11ES2 50 M A 11ES4 —11ES8 10 Thermal Resistance, junction to ambient Rth , Coiporatlon 600 This Material Copyrighted By Its Respective Manufacturer 1IESI 11ES2 11ES4 11ES6 11ES8 FIG


OCR Scan
PDF A/100â 11ES1 11ES2 11ES4 11ES6 11ES8 54C021) 11ES4 11ES6 11E51 11E52 11E54 11E52 11ES8 Low Forward Voltage Diode silicon rectifier diode Diode BFC 110
Not Available

Abstract: No abstract text available
Text: SILICON RECTIFIER DIODE 1IESI 11ES2 11ES4 “ g i a /100~800 v FEATURES 2.7(.106) ° Miniature Size M AX DIA 0 Low Forward Voltage Drop ° Low Reverse Leakage Current 0.60(.024)DIAa 0.54C021) .27(1.06) ° High Surge Capability MIN ° 26mm and 52mm Inside Tape Spacing , ambient Tj = 25°C Tj - 25°C 11ES1~ 11ES2 11ES4 — 11ES8 _ 1.0 . 50 10 P.C. Board , Max. bfc.15123 0002305 T23 500 11ES1 11ES2 11ES4 11ES6 11ES8 VS. FORWARD CURRENT FIG


OCR Scan
PDF 11ES2 11ES4 54C021) 11ES1 11ES6 11ES1 11ES2 11ES8
2002 - Not Available

Abstract: No abstract text available
Text: 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 0.205 (5.2 , 11ES2 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 200 Volts Maximum RMS , : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( 11ES1 - 11ES2 ) PEAK FORWARD SURGE CURRENT


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PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202,
Not Available

Abstract: No abstract text available
Text: www.eicsemi.com 11ES1 - 11ES2 SILICON RECTIFIER DIODES DO - 41 PRV : 100 - 200 Volts Io : 1.0 Ampere * * * * * * 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward , SYMBOL 11ES1 11ES2 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 200 , ( 11ES1 - 11ES2 ) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES


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PDF 11ES1 11ES2 DO-41 UL94V-O MIL-STD-202,
2001 - 11ES2

Abstract: No abstract text available
Text: DIODE Type 11ES2 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings Approx Net Weight:0.17g Rating Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating , 45 Ta=50 ,*2 1.57 50Hz , 1, Half Sine Wave,1cycle,Nonrepetitive 40 + 150 40 + 150 11ES2


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PDF 11ES2 11ES2
1-450-358-11

Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Text: -4101 11ES2-NTA2B 11ES2-NTA2B HZS24-1LTA C760 C761 C765 C770 C801 1-124-252-00 1-136-159-00 , .1ES-B2 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 5% < CONNECTOR > CNS301 CNS302 CNS800 , RELAY RELAY (12V) RELAY (12V) RELAY (12V) DIODE DIODE DIODE DIODE DIODE 1SS119 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 11ES2-NTA2B 8-719-911-19 DIODE 1SS119 8-719-911-19 DIODE 1SS119 < FUSE


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PDF TA-VE150 RM-U150) 1-450-358-11 SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
2009 - FSF05B60

Abstract: FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q f10p04q FCF20B60 F10P06Q F5KF20B
Text: Discontinued products and their replacements No. Discon. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Replacement No. 11ES1 10EDB10 51 11ES2 10EDB20 52 11E1 10JDA10 53 11E2 10JDA20 54 11E4 10JDA40 55 10E1(10D1) 10DDA10 56 10E2(10D2) 10DDA20 57 10E4(10D4) 10DDA40 58 10E6(10D6) 10DDA60 59 20E1 20KDA10 60 20E2


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PDF 11ES1 10EDB10 11ES2 10EDB20 10JDA10 10JDA20 10JDA40 10DDA10 10DDA20 10DDA40 FSF05B60 FSF10B60 F10P10Q 30pfb60 SF05A60-11TSF05B60-11A C30P10Q f10p04q FCF20B60 F10P06Q F5KF20B
15CD11

Abstract: 12CC12 12MF20 12BG11 11ES2 11EFS4 11EFS3 11EFS2 11EFS1 12JG11
Text: > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'<) y hfó? y Pft 677 12BG11


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PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 15B015 15BL11 15CC11 15CD11 12CC12 12MF20 11EFS4 11EFS3 11EFS2 12JG11
15bl11

Abstract: 12JH11 12CC12 12BH11 12BG11 11ES2 11EFS4 11EFS3 11EFS2 11EFS1
Text: > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'<) y hfó? y Pft 677 12BG11


OCR Scan
PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 150ns 15DF6 15bl11 12JH11 12CC12 12BH11 11EFS4 11EFS3 11EFS2
12JH11

Abstract: 11ES2 11EFS2 11EFS3 11EFS4 11EFS1 12BG11 12BH11 12CC12 12CD12
Text: > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'<) y hfó? y Pft 677 12BG11


OCR Scan
PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 15B015 15BL11 15CC11 12JH11 11EFS2 11EFS3 11EFS4 12BH11 12CC12 12CD12
30KF60B

Abstract: C25P10Q 10EF1 C25P40F NSF03A20 F10P10Q 61MQ60 16KQ90 NSQ03A04 11DF2
Text: 11EQS04 UEQS05 11EQS06 11EQS09 11EQS10 11ES1 11ES2 11ES4 11ES6 U ES8 12MF10 12MF20 12MF30 12MF40


OCR Scan
PDF 1N4001 1N4002 1N4004 1N4005 1N4006 1N4007 2VF10CT F20CT F30CT F40CT 30KF60B C25P10Q 10EF1 C25P40F NSF03A20 F10P10Q 61MQ60 16KQ90 NSQ03A04 11DF2
11ES2

Abstract: 10-32UNF2A 12CC12 12BH11 12BG11 15bl11 11EFS4 11EFS3 11EFS2 11EFS1
Text: > US? > Ktt 677 11ES2 B 400 200 1 50a 45 1 1 25] 50 200 (OÌÌ5X5 7'<) y hfó? y Pft 677 12BG11


OCR Scan
PDF 11EFS1 11EFS2 11EFS3 11EFS4 11BS1 11ES2 12BG11 sc-11 -28UNF-2ATÂ i042U 10-32UNF2A 12CC12 12BH11 15bl11 11EFS4 11EFS3 11EFS2
motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 10DF2 "cross reference" diode IR 30D1 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: NSD03A10 NSD03A20 NSD03A40 11ES2 11ES4 11ES6 11E1 11E2 11E4 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006


OCR Scan
PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 10DF2 "cross reference" diode IR 30D1 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
bvy27-200

Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b RGP15J equivalent BYD14J BYD14G ERD28-06S BVY28-200
Text: 1N5626 1 1N5626GP BYW84 3 1N5627GP BYW85 3 11ES2 BYT51D 3 1N5811


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PDF 1N5190GP BYW76 BYT51D 1N5212 UTR2320 BYW32 UTR2340 BYW34 UTR3305 BYW72 bvy27-200 BY228 equivalent ERD29-08 ERC06-15s ERC05-10b RGP15J equivalent BYD14J BYD14G ERD28-06S BVY28-200
F10P100

Abstract: 10EF1 C16P04Q 60KQ10B 12MF30 30MF40 C25P40F F10KF20B diode f40c 12MF40
Text: 11ES1 11ES2 11ES4 11ES6 11ES8 600 - t e * H 5. 100 200 400 50 100 200 400 600 800


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PDF 11EQS03L 11EQS02L 11EQ03 11EQ04 11EQ05 11EQ06 11EQ09 11EQ10 11EQS03 11EQS04 F10P100 10EF1 C16P04Q 60KQ10B 12MF30 30MF40 C25P40F F10KF20B diode f40c 12MF40
EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 FR207 equivalent 1N6644
Text: No file text available


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PDF PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 FR207 equivalent 1N6644
2001 - BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note ct 2A05 diode BU2508Dx equivalent diode cross reference BYW96E ST2001HI equivalent BU2508DF equivalent
Text: No file text available


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PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note ct 2A05 diode BU2508Dx equivalent diode cross reference BYW96E ST2001HI equivalent BU2508DF equivalent
2001 - BU4508DX equivalent

Abstract: BUT11APX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Text: No file text available


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PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
2002 - BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 toshiba l 300 laptop motherboard circuit diagram TRANSISTOR S1A 64 smd
Text: No file text available


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PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 toshiba l 300 laptop motherboard circuit diagram TRANSISTOR S1A 64 smd
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