The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC6409IUDB#TRMPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC6409IUDB#TRPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC6409CUDB#TRPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: 0°C to 70°C
LTC5582IDD#TRPBF Linear Technology LTC5582 - 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LTC6409HUDB#PBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: -40°C to 125°C
LTC6409CUDB#TRMPBF Linear Technology LTC6409 - 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver; Package: QFN; Pins: 10; Temperature Range: 0°C to 70°C

10GHz oscillator Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2015 - S010G010GA

Abstract: No abstract text available
Text: Frequency Synthesizer S010G010GA ■Main Application ● Local Oscillator of Microwave , for Local Oscillator with Low Phase Noise and Low Spurious ● Built-in PLL Circuit for Synchronizing , — Corresponding to the Frequency of 4GHz up to 10GHz Function Block 10MHz External Signal External PLL , Item S010G010GA Output Frequency (GHz) A specified frequency from 4GHz to 10GHz Standard , (dBc) Max. –30 Spurious Non-harmonics (dBc) Max. –60 at 4GHz at 10GHz 1kHz offset


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PDF S010G010GA 10MHz 10GHz 10MHz S010G010GA
2006 - VCO 10GHz

Abstract: VCO 10GHZ oscillator
Text: RFVC1801C CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHz TO 10GHz RFVC1801C CONNECTORIZED MODULE WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHz TO 10GHz Package: Module, 3 Connectors, 22.86mmx22.86mmx13.97mm Features 5GHz to 10GHz VCO 5V Operation, 52mA +3.0dBm Typical Output Power -72dBc/Hz @ , Product Description RFMD's RFVC1801C wideband Voltage Controlled Oscillator is an InGaP HBT MMIC with , 70 18 Recommended operating range. Test Conditions: VS =5V, Freq=5GHz to 10GHz , T=25°C unless


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PDF RFVC1801C 10GHz RFVC1801C 86mmx22 86mmx13 10GHz -72dBc/Hz 10kHz -96dBc/Hz VCO 10GHz VCO 10GHZ oscillator
VCO 10GHz

Abstract: tsmc cmos 10GHz clock oscillator TSMC 0.13um CMOS XCVR 10Gbps applications of prbs generator P802 SB3000 SB320
Text: oscillator and generates a clean system and 10GHz clocks. In the receive path, the device accepts the serial , data, low noise Clock/Data Recovery (CDR), and 10GHz VCO · Retimed serial repeater mode support · Optional 10GHz transmit clock output · Single reference 1/16 or 1/64 input clock · Lock detect, frequency , 10Gbps TX 10GHz Clock REFCLK SB3000 is a very low power and highly integrated and programmable


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PDF SB3000 SB3000 10Gbps 400mW 32/64-bit 10GHz s/622MHz VCO 10GHz tsmc cmos 10GHz clock oscillator TSMC 0.13um CMOS XCVR applications of prbs generator P802 SB320
2013 - Not Available

Abstract: No abstract text available
Text: Crystal Oscillators XpressO Clock Oscillator XpressO  XpressO 水晶発振器(LVPECLタイプ) KXO-PC72 動作条件 Input Voltage 投入電圧(V DD ) Operating Temp. 動作温度範囲(TAMAX ) -55℃ ~ +105℃ Storage Temp. 保存温度範囲(TSTG ) -55℃ ~ +125℃ Junction Temp , Typ. ms ns Condition 条件 F0 0.75 ~ 1.0GHz 0.75 ~ 1.0GHz 50% VP-P Level VIH VIL TR TF > 70% VDD or OPEN < 30% VDD 0.75 ~ 1.0GHz 0.75 ~ 1.0GHz V V % V V ps ps 1


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PDF KXO-PC72 100ohm KXO-QC52â KXO-PC72â KXO-QC72
1998 - fujitsu gaas fet

Abstract: FSX56LP FSX56 Fujitsu GaAs FET application note
Text: FSX56LP General Purpose GaAs FET FEATURES · Low Phase Noise: f = -95 dBc/Hz (Typ.) (10KHz offset) · Small Size Package: LP package for SMT application · Tape and Reel available · High Output Power: P1dB = 15dBm (Typ.)@ 10GHz · High Associated Gain: G1dB = 6dB (Typ.)@ 10GHz DESCRIPTION The FSX56LP is a low phase noise GaAs FET with an N-channel Schottky gate that is designed for oscillator , 3V, VGS=0V VDS = 3V, IDS=27mA VDS = 3V, IDS=2.7mA IGS = -2.7µA f= 10GHz VDS = 3V IDS(DC) = 30mA (Note


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PDF FSX56LP 10KHz 15dBm 10GHz FSX56LP 65mmafety, FCSI0598M200 fujitsu gaas fet FSX56 Fujitsu GaAs FET application note
2007 - crystal 10Ghz

Abstract: 0320A sn 357 NEL Clock 10GHz clock oscillator 10GHz oscillator
Text: . Features · Wide frequency range­671.0MHz to 1.0GHz · User specified tolerance available · Case at , qualified for crystal oscillator start-up conditions · Overtone technology · High Q Crystal actively tuned oscillator circuit · Power supply decoupling internal · Dual ground plane for added stability · , aging, shock, vibration Typical - Max 1.0GHz 55/45% VCC


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PDF SN-A2900 1500g A290X 16pin) 100ppm 50ppm 25ppm 20ppm crystal 10Ghz 0320A sn 357 NEL Clock 10GHz clock oscillator 10GHz oscillator
FSX56LP

Abstract: fujitsu gaas fet Fujitsu GaAs FET application note 10GHz oscillator FSX56
Text: FSX56LP - General Purpose GaAs FET FEATURES _ • High Output Power: P1dB = 15dBm (Typ.)@ 10GHz • High Associated Gain: G1dB = 6dB (Typ.)@ 10GHz • Low Phase Noise: 4 = -95 dBc/Hz (Typ.) (10KHz offset) • Small Size Package: LP package for SMT application • Tape and Reel available , oscillator applications in C-X band. Fujitsu's stringent Quality Assurance Program assures the highest , Output Power at 1dB G.C.P. P1dB f= 10GHz VDS = 3V Ids(dc) = 30mA (Note 1) 14 15 - dBm Power Gain at 1dB


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PDF FSX56LP 15dBm 10GHz 10KHz FSX56LP FCSI0598M200 fujitsu gaas fet Fujitsu GaAs FET application note 10GHz oscillator FSX56
2010 - SN-A2900

Abstract: No abstract text available
Text: . Features · Wide frequency range­671.0MHz to 1.0GHz · User specified tolerance available · Case at , Reliability - NEL HALT/HASS qualified for crystal oscillator start-up conditions · Overtone technology · High Q Crystal actively tuned oscillator circuit · Power supply decoupling internal · Dual ground , 1.0GHz 55/45% VCC-1.60V VCC-0.74V 600 psec 3 psec 1.0V VCC +100ppm Typical 3.3V - Max


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PDF SN-A2900 1500g A290X 16pin) 100ppm 50ppm 25ppm 20ppm
2003 - VCO 10GHz

Abstract: VCO 10GHZ oscillator 10GHz oscillator ISL3090IR jedec package MO-220 QFN-40 MO-220 ISL3990 ISL3890 ISL3690 5GHz local oscillator
Text: ISL3090 ® Data Sheet 10GHz VCO June 2003 FN8045.1 Features The ISL3090 is a 10GHz SiGe monolithic VCO circuit designed to simplify and reduce the cost and size of miniature wireless transceivers. A fully integrated VCO requiring no external elements such as inductors or varactors greatly simplifies low cost local oscillator synthesized applications. Included in this differential design is a high/low band selection and a low-power standby function. The ISL3090 directly


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PDF ISL3090 10GHz FN8045 ISL3090 ISL3690) ISL3890) ISL3990) ISL3090IR VCO 10GHz VCO 10GHZ oscillator 10GHz oscillator ISL3090IR jedec package MO-220 QFN-40 MO-220 ISL3990 ISL3890 ISL3690 5GHz local oscillator
2003 - VCO 10GHz

Abstract: VCO 10GHZ oscillator 10GHz oscillator ISL3090IR 10GHz VCO Pub-95 SX26 5GHz local oscillator ISL3890 ISL3990
Text: ISL3090 ® Data Sheet 10GHz VCO March 2003 FN8045 Features The ISL3090 is a 10GHz SiGe monolithic VCO circuit designed to simplify and reduce the cost and size of miniature wireless transceivers. A fully integrated VCO requiring no external elements such as inductors or varactors greatly simplifies low cost local oscillator synthesized applications. Included in this differential design is a high/low band selection and a low-power standby function. The ISL3090 directly interfaces with


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PDF ISL3090 10GHz FN8045 ISL3090 ISL3690) ISL3890) ISL3990) WirelessLA16 VCO 10GHz VCO 10GHZ oscillator 10GHz oscillator ISL3090IR 10GHz VCO Pub-95 SX26 5GHz local oscillator ISL3890 ISL3990
2006 - vco 10GHz

Abstract: 10GHz OSCILLATOR RFVC1801 VCO 5GHz 10GHZ wideband vco mmic
Text: RFVC1801 RFVC1801 Wideband MMIC VCO with Buffer Amplifier, 5GHz to 10GHz WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ Package: QFN, 4mmx4mmx1.1mm Frequency and Output Power versus V TUNE (VS=5V, T=25°C) 12 6 11 Features 5 Evaluation Board 10 4 9 3 , 's RFVC1801 wideband Voltage Controlled Oscillator is a GaAs InGaP HBT MMIC with integrated VCO core and RF , any time without prior notice. Unit Condition VS =5V, Freq=5GHz to 10GHz , T=25°C unless noted


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PDF RFVC1801 10GHz -96dBc/Hz 100kHz DS100615 vco 10GHz 10GHz OSCILLATOR RFVC1801 VCO 5GHz 10GHZ wideband vco mmic
2006 - Not Available

Abstract: No abstract text available
Text: RFRX1001 RFRX1001 10GHz to 15.4GHz GaAs MMIC 10GHz TO 15.4GHz GaAs MMIC IQ DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm GND LOIN GND N/C Vd3 N/C 32 31 30 29 28 27 N/C N/C 26 25 N/C 1 IF1 2 Features  RF Frequency= 10GHz to 15.4GHz  LO , GND Functional Block Diagram Product Description The RFRX1001 is a 10GHz to 15.4GHz GaAs pHEMT , Not Connected LOA bias=4V (internally connected to Vd4) Not Connected GND Local oscillator input


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PDF RFRX1001 10GHz 32-Pin, 15dBc 16dBm -20dBm DS110914
Not Available

Abstract: No abstract text available
Text: SP5026 1.0GHz 3-WIRE BUS CONTROLLED SYNTHESISER The SP5026 is a program m ing variant of the SP5510 , tained fro m a 4M H z c ry s ta l controlled on-chip oscillator . The comparator has a charge pum p , 10 ] E N ABLE DP18 FEATURES ■Complete 1.0GHz Single Chip System ■Dual Standard 62.5kHz , collector of external varicap drive transistor V pin 18 = 0.7V Pin 18 current = 100^A Oscillator tem perature stability 2 p p nV ’ C Oscillator Stability with Supply Voltage 2 ppm/V 200


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PDF SP5026 SP5026 SP5510, SP5026, 15-bit 25kHz)
2006 - DS110914

Abstract: No abstract text available
Text: RFRX1001 10GHz to 15.4GHz GaAs MMIC RFRX1001 10GHz TO 15.4GHz GaAs MMIC IQ DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm GND LOIN GND N/C Vd3 N/C N/C N/C 32 N/C 1 31 30 29 , /C 7 N/C 8 0 90 RF Frequency= 10GHz to 15.4GHz LO Frequency=6GHz to 19.4GHz IF Frequency=DC to , Product Description The RFRX1001 is a 10GHz to 15.4GHz GaAs pHEMT downconverter, incorporating an , Connected LOA bias=4V (internally connected to Vd4) Not Connected GND Local oscillator input. AC coupled and


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PDF RFRX1001 10GHz RFRX1001 32-Pin, 16dBm 15dBc 10Evaluation DS110914
4Mhz cryStal oscillator

Abstract: 4Mhz crystal SP4902 SP5026 SP5510 TD6380 SP5026S
Text: GEC PLESSEY i semiconductors |_PRELIMINARY INFORMATION 3102 10 SP5026 1.0GHz 3-WIRE BUS , 3.90625kHz The comparison frequencies are both obtained from a 4MHz crystal controlled on-chip oscillator , Only one external transistor is required for varicap line driving. FEATURES ■Complete 1.0GHz , current = lOO^A Oscillator temperature stability 2 ppnVC Oscillator Stability with Supply Voltage 2 ppm/V Recommended crystal series resistance 10 200 £2 Crystal oscillator drive level 2


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PDF SP5026 SP5026 SP5510, SP5026, 15-bit 8125kHz program18 25kHz) 4Mhz cryStal oscillator 4Mhz crystal SP4902 SP5510 TD6380 SP5026S
2006 - VCO 10GHz

Abstract: rfvc1801 RFVC1801SR
Text: RFVC1801 Wideband MMIC VCO with Buffer Amplifier, 5GHz to 10GHz RFVC1801 WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 5GHZ TO 10GHZ Package: QFN, 4mmx4mmx1.1mm Features Wideband Performance POUT =+3dBm Typical External Resonator Not Required Single Bias Supply: +5V at 52mA Output Phase Noise , Functional Block Diagram Product Description RFMD's RFVC1801 wideband Voltage Controlled Oscillator is a , =5GHz to 10GHz , T=25°C unless noted otherwise. 5.0 4.75 40 0 390 3 -72 -96 -20 18 5 9 -0.7 4 45 5.00 52


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PDF RFVC1801 10GHz RFVC1801 -96dBc/Hz 100kHz DS110829 VCO 10GHz RFVC1801SR
10GHz DRO

Abstract: DIELECTRIC COAXIAL RESONATOR design dielectric resonator oscillator HP5351B DR03 HP8514A
Text: 0 - 6 20000 min. (at 10GHz ) 1 x 101 4 min. 10.7 0.0077 0.077 7.5 0.01 max. 800 1200 F Resonator 23-24 Tf * = 0 - 4 35000 (at 10GHz ) 1 x 101 3 min. 11.0 0.0100 0.078 7.5 0.01 max. 700 1100 12000 min. (at 10GHz ) 7000 min. (at 7GHz) 1 x 101 3 min. 10.7 0.0051 0.050 7.7 0.01 max. 700 900 1 x 101 3 min. 6 , S-ParameterTest Set HP8514A - Test Fixture M ENA Test Sample Sweep Oscillator HP8350B Frequency , Fig. 5: Equivalent Circuit for DRO VB (volts) Fig. 6: Oscillator characteristics as a function


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1999 - kf 8715

Abstract: Ic 9430 900mhz frequency generator transistors equivalent 9012 UPA101 5GHz band pass filter NF50 HFA3101B96 HFA3101B H3101B
Text: 's bonded wafer UHF-1 SOI process, this array achieves very high fT ( 10GHz ) while maintaining excellent , Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz Ordering Information PART NUMBER (BRAND) · , 17.5 - dB f = 1.0GHz C - 11.9 - dB Minimum Noise Figure, NFMIN, Q5 and Q6 IC = 5mA, VCE = 3V f = 0.5GHz C - 1.7 - dB f = 1.0GHz C - 2.0 - , dB f = 1.0GHz C - 2.5 - dB DC Current Gain Matching, hFE1/hFE2, Q1 and Q2, Q3


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PDF HFA3101 HFA3101 10GHz) 10GHz kf 8715 Ic 9430 900mhz frequency generator transistors equivalent 9012 UPA101 5GHz band pass filter NF50 HFA3101B96 HFA3101B H3101B
2000 - 1r100

Abstract: Microwave oscillators DRT163U040 DRT193U040 VCO 5GHz 38T1 DRD046U DRR020 DRR040 drt060u020
Text: ) 6000min. (at 7GHz) 7000min. (at 7GHz) 10000min. (at 10GHz ) 12000min. (at 10GHz ) 15000min. (at 10GHz ) 20000min. (at 10GHz ) 35000 (at 10GHz ) Ins. Resistance ( . cm) 1Z1013min. 1Z1013min. 1Z1013min , 60000 50000 F Series ( 10GHz ) Q 40000 30000 E Series ( 10GHz ) 20000 B Serie M Series ( 10GHz ) Hz) P Series ( 10GHz ) U Series ( 10GHz ) K Series ( 10GHz ) -40 -20 0 20 , ( 10GHz ) 60 80 100 This is the PDF file of catalog No.O95E-7. No.O95E7.pdf 00.7.21


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PDF O95E-7. O95E7 NoO95E-7 1r100 Microwave oscillators DRT163U040 DRT193U040 VCO 5GHz 38T1 DRD046U DRR020 DRR040 drt060u020
Not Available

Abstract: No abstract text available
Text: Sub-Harmonic Mixer Typical on wafer Measurements Local oscillator input power: LO = -4dBm Conversion Loss , Frequency = 1.0GHz 0.0 5 Lc (2xLO+IF) -2.5 Lc (2xLO-IF) P LO @ RF P 2*LO @ RF 0 , Sub-Harmonic Mixer Typical on wafer Measurements Local oscillator input power: LO = 0dBm Conversion Loss , Frequency = 1.0GHz 0.0 5 Lc (2xLO+IF) -2.5 Lc (2xLO-IF) P LO @ RF P 2*LO @ RF 0 -7.5


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PDF CHM1290-99F 20-30GHz CHM1290-99F DSCHM12902355
2006 - RFUV1002

Abstract: 10GHz RF mixer rfmd qfn package 14GHZ GAAS
Text: Frequency Over Temperature (USB 10GHz Band) 10 5 0 5 10 15 20 7 8 9 10 11 LO Frequency (GHz) 12 13 14 LO , versus Conversion Gain at 25°C (USB 10GHz Band) 35 30 25 OIP3 (dBm) OIP3 (dBm) 20 15 10 5 0 10 5 0 5 10 , sales-support@rfmd.com. DS110908 RFUV1002 OIP3 (USB) at -40 oC OIP3 versus Conversion Gain at 40°C (USB 10GHz , RFUV1002 OIP3 (USB) at 85 oC OIP3 versus Conversion Gain at 85°C (USB 10GHz Band) 35 30 25 OIP3 (dBm , ) at 25 oC OIP3 versus Conversion Gain at 25°C (LSB 10GHz Band) 35 30 25 OIP3 (dBm) OIP3 (dBm) 20 15


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PDF RFUV1002 14GHz 32-Pin, -15dB 28dBm 20dBc DS110908 RFUV1002 10GHz RF mixer rfmd qfn package 14GHZ GAAS
2006 - Not Available

Abstract: No abstract text available
Text: 10GHz Band) LO Leakage versus LO Frequency Over Temperature (USB 11GHz Band) 5 LO Leakage at RF , versus Conversion Gain at 25°C (USB 10GHz Band) OIP3 versus Conversion Gain at 25°C (USB 11GHz , 10GHz Band) OIP3 versus Conversion Gain at Ͳ40°C (USB 11GHz Band) 30 25 25 OIP3 (dBm , (USB) at 85 oC OIP3 versus Conversion Gain at 85°C (USB 10GHz Band) OIP3 versus Conversion Gain , at 25°C (LSB 10GHz Band) OIP3 versus Conversion Gain at 25°C (LSB 11GHz Band) 30 25


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PDF RFUV1002 14GHz 32-Pin, 14GHz -15dB 28dBm 20dBc 100nF
1996 - Harris HFA3101 5 GHz Gilbert cell array

Abstract: Array chip resistors UPA101 NF50 HFA3101B96 HFA3101B HFA3101 H3101B reactance modulator 500E
Text: Features Description · High Gain Bandwidth Product (fT) . . . . . . . . . . . 10GHz The HFA3101 is , process, this array achieves very high fT ( 10GHz ) while maintaining excellent hFE and VBE matching , - dB f = 1.0GHz C - 11.9 - dB Minimum Noise Figure, NFMIN, Q5 and Q6 IC = 5mA, VCE = 3V f = 0.5GHz C - 1.7 - dB f = 1.0GHz C - 2.0 - dB IC = 5mA, VCE = 3V f = 0.5GHz C - 2.25 - dB f = 1.0GHz C - 2.5 -


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PDF HFA3101 10GHz HFA3101 10GHz) Harris HFA3101 5 GHz Gilbert cell array Array chip resistors UPA101 NF50 HFA3101B96 HFA3101B H3101B reactance modulator 500E
TD6382Z

Abstract: TD6381Z TD6381P TD6381N TD6380Z TD6380P TD6380N TD6380 A 102G resistor 40 MHZ OSCILLATOR 4pins
Text: MHz 62.5 kHz 1.0GHz 6381 3.2 MHz 50 kHz 1.2 GHz 6382 4.0 MHz 31.25 kHz 1.0GHz (Note) Handle with , , this will be an output terminal of reference signal whose crystal oscillator is divided by 29 or 210 , oscillator GND as is logic GND. Never wire this pin close to the high frequency GND of pin 16. 9 10 , ) Höh © m m VCC = 5V (l2L) ( BANDSWITCH 12V D.C. ^ Crystal oscillator specification TD6380 TD6381


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PDF TD6380 82P/N/Z TD6380P, TD6380N, TD6380Z, TD6381P, TD6381N, TD6381Z, TD6382P, TD6382N, TD6382Z TD6381Z TD6381P TD6381N TD6380Z TD6380P TD6380N A 102G resistor 40 MHZ OSCILLATOR 4pins
1999 - HFA3101

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
Text: 's bonded wafer UHF-1 SOI process, this array achieves very high fT ( 10GHz ) while maintaining excellent hFE , Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz · High Power Gain Bandwidth Product . . . . . . . . . , , VCE = 5V IC = 5mA, VCE = 3V IC = 5mA, VCE = 3V IC = 5mA, VCE = 3V f = 0.5GHz f = 1.0GHz f = 0.5GHz f = 1.0GHz f = 0.5GHz f = 1.0GHz C C C C C C C C C C A A A C B 0.9 TYP 18 12 6 0.1 70 0.300 0.600 0.200 0.400 , oscillator of a much higher frequency range from 600MHz to 1.2GHz into the carrier input. Using the example


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PDF HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
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