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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

102 TRANSISTOR 20p Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - MB3782

Abstract: MB3782P MB3782PF
Text: PACKAGE Plastic DIP 20 pin , Plastic SOP 20 pin , (DIP- 20P -M01) (FPT- 20P -M01) MB3782 s , SCP PUT1 8 13 ­ IN2 GND 9 12 FB2 OUT2 10 11 DTC2 (DIP- 20P -M01) (FPT- 20P -M01) s PIN DESCRIPTION Pin No. Pin Name I/O Description 1 VREF O 2.50 , internally connected to VREF/2 voltage. Also, a feedback transistor and capacitor can be connected between , return to normal range before the voltage in this capacitor reaches the transistor 's base-emitter


Original
PDF DS04-27205-4E MB3782 MB3782 MB3782P MB3782PF
1998 - Not Available

Abstract: No abstract text available
Text: Plastic DIP , 20 pin Plastic SOP , 20 pin (DIP- 20P -M01) (FPT- 20P -M01) MB3782 s PIN ASSIGNMENT , OUT3 SCP ­ IN2 FB2 DTC2 20 19 18 17 16 15 14 13 12 11 (DIP- 20P -M01) (FPT- 20P -M01) s PIN , internally connected to VREF/2 voltage. Also, a feedback transistor and capacitor can be connected between , return to normal range before the voltage in this capacitor reaches the transistor 's base-emitter junction voltage (VBE ( 0.65 V), the latch circuit will operate to turn the output transistor off and at


Original
PDF DS04-27205-4E MB3782 MB3782 F9803
2008 - transistor 7350 A

Abstract: transistor 7350 Q2 8050 NPN HT8050 1/STK 8050 ic
Text: transistor Speed is adjusted by external RC oscillator. Maximum 10 outputs, the reset pin can be , Package Outputs 7350C Chip form L1 ~ L10 7350-0 20P DIP L1 ~ L10 7350-2 16P DIP , – 7350 PACKAGE TYPE 1. 10 OUTPUTS ( 20P DIP) L10 L9 L8 L7 L6 L5 L4 L3 L2 L1 , Flash 12VDC C2 102 C1 1K 1K 1K RESET VDD GO ALLON 3 104 4 1M 104 , high current and high voltage conditions,add C1=47µF and 102 to ALLON pin,IC will be more stable


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PDF 10-OUTPUT 15VDC HT8050 12VDC transistor 7350 A transistor 7350 Q2 8050 NPN HT8050 1/STK 8050 ic
transistor a640

Abstract: transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
Text: T018 48 CDQ10035 200m SS 15 ? 0 500n 6.0 1.0m 45 400nb 25 5.0 20p PL TO 5 0 49 CDQ10036 200m ss 30 ? 0 500n 6.0 1.0m 45 400nb 25 5.0 20p PL TO 5 0 50 CI3900 200m 2.6m j 18 18 5 0 100m 100n , CDQ10016 200m 30MI 1.1m sa 15 15 ? 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL T05 0 84 CDQ10017 200m 30MS 1.1m sa 30 30 ? 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL TO 5 85 CDQ10018 200m 30M§ 1.1m sa 45 45 7 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL TO 5 0 86 CDQ10019 200m 30MS 1.1m sa 15 15 7 0 500n


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PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 2SC634 transistor 2sC632 Pt-100W L14B CA3036 DM02B FV918
2SA240

Abstract: 2N2448 GET872 2SA276 af116n data 2N266 af114 L5431 L51A 2n725
Text: R11 101# GET693 75m 50M 1.5m 0.1 20 1.0 10m 30u 6.00 1.Om0 60 2.0p D R11 102 # AF114N 75m , 6.0 1.0m 50 tA 20ptZ) u8 A 47 2N812 75m 5.0MA 1.2m #s 30 12 20 200m 5.0u 6.0 1.0m 50 tA 20p @ u9 BS 48# NKT103t 75m 5.0M 1.5m 0J 20 20 0 6.0 500m 40u 4.50 1.Om0 75 20p A 1022 49# NKT106T 75m 5.0M 1.5m 0 J 20 20 0 6.0 500m 40u 4.50 1.Om0 75 20p A T022 50# NKT109T 75m 5.0M 1.5m 0J 20 20 0 6.0 500m 40u 4.50 1.Om0 75 20p A T022 51# NKT123t 75m 5.0M 1.5m 0.1 20 20 0 6.0 500m


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PDF B170024 4000n 2SA240 2N2448 GET872 2SA276 af116n data 2N266 af114 L5431 L51A 2n725
transistor k1502

Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
Text: 10p 50p 20p 0.0 5.0 50u 120u 2.5k% 2.0p # 15m 200S 150S PE El u23 T018 T072 DB DA0 DP 16 17 18# 2SJ11 , 0.0 10 10 10 10 100uA ,10mA 300u 600uA .6mA 1.0kt 2.0p * 2.0p * 5.0d#* 1.0m 150 150 1 50S PE PE PL , 7.0m 10n .25n .25n 0.0 0.0 0.0 10 10 10 2.0m 1.0m 1.0m 8.0m 3.5m 3.5m 100u 60u% 60u% 700 t 20p # 16p , ,18kt 80k 20p # 20p # 2.0m 2.0m 175J 175J 150JA DPL DPL OS T018 T018. R038s DA0 DA0 85 86 87 FN 1034 , 0.0 0.0 15 15 80m 1.3m 2.4m 3.0m 50k 1.7k 1.5k 2.0p (z! 7.0p# 7.0d# 2.0m 2.0m 150J 175 175 MOS # #


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PDF NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 darlington 12V 6.2A 2N5513 K1501 p1027
2003 - MB3782

Abstract: MB3782P MB3782PF
Text: 20 pin , (DIP- 20P -M01) Plastic SOP 20 pin , (FPT- 20P -M01) MB3782 s PIN ASSIGNMENT , ­ IN2 GND 9 12 FB2 OUT2 10 11 DTC2 (DIP- 20P -M01) (FPT- 20P -M01) s PIN , amps 1 and 2 is internally connected to VREF/2 voltage. Also, a feedback transistor and capacitor can , transistor 's base-emitter junction voltage (VBE ( 0.65 V), the latch circuit will operate to turn the output transistor off and at the same time set the dead time to 100%. Once the prevention circuit is activated


Original
PDF DS04-27205-5E MB3782 MB3782 F0309 MB3782P MB3782PF
1998 - transistor Common collector configuration

Abstract: VIDEO TIMING CONTROLLER VTC Common collector configuration constant voltage power supply circuit diagram IOR 450 M MB3782 MB3782P MB3782PF
Text: pin , (DIP- 20P -M01) (FPT- 20P -M01) To Top / Lineup / Index MB3782 s PIN ASSIGNMENT , ­ IN2 GND 9 12 FB2 OUT2 10 11 DTC2 (DIP- 20P -M01) (FPT- 20P -M01) s PIN , amps 1 and 2 is internally connected to VREF/2 voltage. Also, a feedback transistor and capacitor can , transistor 's base-emitter junction voltage (VBE ( 0.65 V), the latch circuit will operate to turn the output transistor off and at the same time set the dead time to 100%. Once the prevention circuit is activated


Original
PDF DS04-27205-4E MB3782 MB3782 transistor Common collector configuration VIDEO TIMING CONTROLLER VTC Common collector configuration constant voltage power supply circuit diagram IOR 450 M MB3782P MB3782PF
2n3604 transistor

Abstract: 2SC5220 2SC5240 2sc5250 transistor 2N3604 CK26A 2N1174 2N2161 2N1103 2SA50
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 10p 1 10nt P-A Gr 85J T01 a 3b# nkt102 10.OM 1000n 2.Ou 600n 75m 5OOm0 80 20p 4.4n P-A Gr 75J T022 37# NKT105 10.OM 1000n 2.Ou 600n 75m 25m0 120 20p 4.4n P-A Gp 75J T022 38# NKT 108 10.OM 1000n 2.Ou 600n 75m 1.Om0 80 20p 4.4n P-a Gr 75J T022 39# NKT122 10.OM 1000n 2.Ou 600n 75m 5OOm0 80 20d 4.4n P-A Gp 75J TO 5 40# NKT128 10.0M WOOn 2.Ou 600n 75m 1.0m<2 80 20p 4.4n P-A Gp 75J


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PDF diff55-10 buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2n3604 transistor 2SC5220 2SC5240 2sc5250 transistor 2N3604 CK26A 2N1174 2N2161 2N1103 2SA50
OC305

Abstract: 102 TRANSISTOR 20p 2sc180 2N1524 2. germanium 2SA28 ASZ20 2SA475 2SA474 OC304
Text: 120 40m 1.0m 1,0m 20 t 80 80 8.0p 2.0p 2.0p 0 D P T09 T040 T033 100 101 102 # 2N1639/33 2N644Ã , 6.0 6.00 1.0m 1.Om0 70 40 t 2.0p 7OOf0 AD0 E T012 T072 R103 G 19 20 21 2N22 2N24 2N52 120m 120m , At 30 t 20p 20p 20d AA T05 TO 5 TO 5 58# 59# 60# XA104 2SA209T XA101 120m 120m 120m 4.OMA 5.0M , 200m 200m 10u 30u 20u 6.0 .200 1.0m 2Om0 90 1 10 t 100 t 12p 20p A AA AA T01 T05 T05 70 7 1 # 72 , 50 t 2.0ub 20p 12p A DA TO 5 T01 85# 86# 87 GET885 GET895 GT5116 120m 120m 120m 20.MS 20.MS 20MS


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PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 OC305 102 TRANSISTOR 20p 2sc180 2N1524 2. germanium 2SA28 ASZ20 2SA475 2SA474 OC304
2N1103

Abstract: CK26A 2SA475 2SA474 A1383 transistor OC304 OC309-2 OC309-1 OC303 2N1524
Text: 120 40m 1.0m 1,0m 20 t 80 80 8.0p 2.0p 2.0p 0 D P T09 T040 T033 100 101 102 # 2N1639/33 2N644Ã , 6.0 6.00 1.0m 1.Om0 70 40 t 2.0p 7OOf0 AD0 E T012 T072 R103 G 19 20 21 2N22 2N24 2N52 120m 120m , At 30 t 20p 20p 20d AA T05 TO 5 TO 5 58# 59# 60# XA104 2SA209T XA101 120m 120m 120m 4.OMA 5.0M , 200m 200m 10u 30u 20u 6.0 .200 1.0m 2Om0 90 1 10 t 100 t 12p 20p A AA AA T01 T05 T05 70 7 1 # 72 , 50 t 2.0ub 20p 12p A DA TO 5 T01 85# 86# 87 GET885 GET895 GT5116 120m 120m 120m 20.MS 20.MS 20MS


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PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 CK26A 2SA475 2SA474 A1383 transistor OC304 OC309-2 OC309-1 OC303 2N1524
st610 transistor

Abstract: TIP04 GT123 2N2342 ST615 2G527 2N117 2N159 DTS105 2sc180
Text: Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 320n 200nt 130n 100nt 120m 150m 3OOm0 .30 0 3.0 0 15Om0 1OOm0 1.0m 12m0 60 20 tA 80 12 20p 2.0oE) P , 120 0 12 2.Op0 20p 20p P P P Ge Ge Go 100J 85 85 T018 TO 5 T05 A0 73 74 75 CK25 CK25A DTS103 4.00M , 20mA 24 A 24 A 40 A 8.3 12 8.3 2Op0 20p (Z) 2Od0 P P N Ge Ge Ge 85S 85S 85S u8 u9 u8 A B5 A 85 86# 87 , T06 1 T05 A0 A0 § 100# 101 102 AU 105 GT123 2N1664 5.00M5 5.00MA 5.00M 900n 900n 2000n 100n 800n 7


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PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 st610 transistor TIP04 GT123 2N2342 ST615 2G527 2N117 2N159 DTS105 2sc180
A1383 transistor

Abstract: 2N907 2SA474 2SA475 2N907 PNP A1383 transistor t09 OC309-2 OC309-1 GET885
Text: 120 40m 1.0m 1,0m 20 t 80 80 8.0p 2.0p 2.0p 0 D P T09 T040 T033 100 101 102 # 2N1639/33 2N644Ã , 6.0 6.00 1.0m 1.Om0 70 40 t 2.0p 7OOf0 AD0 E T012 T072 R103 G 19 20 21 2N22 2N24 2N52 120m 120m , At 30 t 20p 20p 20d AA T05 TO 5 TO 5 58# 59# 60# XA104 2SA209T XA101 120m 120m 120m 4.OMA 5.0M , 200m 200m 10u 30u 20u 6.0 .200 1.0m 2Om0 90 1 10 t 100 t 12p 20p A AA AA T01 T05 T05 70 7 1 # 72 , 50 t 2.0ub 20p 12p A DA TO 5 T01 85# 86# 87 GET885 GET895 GT5116 120m 120m 120m 20.MS 20.MS 20MS


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PDF USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 A1383 transistor 2N907 2SA474 2SA475 2N907 PNP A1383 transistor t09 OC309-2 OC309-1 GET885
transistor t09

Abstract: A1383 transistor 2sc114 transistor 2SC114 replacement usaf516es048m 2sc107 2SA27 usaf517es060m usaf516es047m 2SA474
Text: 120 40m 1.0m 1,0m 20 t 80 80 8.0p 2.0p 2.0p 0 D P T09 T040 T033 100 101 102 # 2N1639/33 2N644Ã , 6.0 6.00 1.0m 1.Om0 70 40 t 2.0p 7OOf0 AD0 E T012 T072 R103 G 19 20 21 2N22 2N24 2N52 120m 120m , At 30 t 20p 20p 20d AA T05 TO 5 TO 5 58# 59# 60# XA104 2SA209T XA101 120m 120m 120m 4.OMA 5.0M , 200m 200m 10u 30u 20u 6.0 .200 1.0m 2Om0 90 1 10 t 100 t 12p 20p A AA AA T01 T05 T05 70 7 1 # 72 , 50 t 2.0ub 20p 12p A DA TO 5 T01 85# 86# 87 GET885 GET895 GT5116 120m 120m 120m 20.MS 20.MS 20MS


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PDF PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 transistor t09 A1383 transistor 2sc114 transistor 2SC114 replacement usaf516es048m 2sc107 2SA27 usaf517es060m usaf516es047m 2SA474
2N1103

Abstract: 2SC632 2SC631 A608 transistor pnp 2N1082 FV918 2SC167 2SC166 2N3604 2N2161
Text: T018 48 CDQ10035 200m SS 15 ? 0 500n 6.0 1.0m 45 400nb 25 5.0 20p PL TO 5 0 49 CDQ10036 200m ss 30 ? 0 500n 6.0 1.0m 45 400nb 25 5.0 20p PL TO 5 0 50 CI3900 200m 2.6m j 18 18 5 0 100m 100n , CDQ10016 200m 30MI 1.1m sa 15 15 ? 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL T05 0 84 CDQ10017 200m 30MS 1.1m sa 30 30 ? 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL TO 5 85 CDQ10018 200m 30M§ 1.1m sa 45 45 7 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL TO 5 0 86 CDQ10019 200m 30MS 1.1m sa 15 15 7 0 500n


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PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC632 2SC631 A608 transistor pnp 2N1082 FV918 2SC167 2SC166 2N3604 2N2161
2SA240

Abstract: 2N266 TF49 2N2448 AF114 2SA276 2sc113 Transistor get691 AF114N GET874
Text: R11 101# GET693 75m 50M 1.5m 0.1 20 1.0 10m 30u 6.00 1.Om0 60 2.0p D R11 102 # AF114N 75m , 6.0 1.0m 50 tA 20ptZ) u8 A 47 2N812 75m 5.0MA 1.2m #s 30 12 20 200m 5.0u 6.0 1.0m 50 tA 20p @ u9 BS 48# NKT103t 75m 5.0M 1.5m 0J 20 20 0 6.0 500m 40u 4.50 1.Om0 75 20p A 1022 49# NKT106T 75m 5.0M 1.5m 0 J 20 20 0 6.0 500m 40u 4.50 1.Om0 75 20p A T022 50# NKT109T 75m 5.0M 1.5m 0J 20 20 0 6.0 500m 40u 4.50 1.Om0 75 20p A T022 51# NKT123t 75m 5.0M 1.5m 0.1 20 20 0 6.0 500m


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PDF BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BSX81B 2SA240 2N266 TF49 2N2448 AF114 2SA276 2sc113 Transistor get691 AF114N GET874
d1302 transistor

Abstract: D1302 transistor D1303 FM1111 FM1205 D1303 DM-58, TV TIXS79 transistor d1302 DNX2
Text: .On 0.0 0.0 0.0 20 20 20 40m .30 m ,30m 1.5 m 1.0m 1.0m 2.7k 3.6k% 3.6k 2.0p 2.Op0 2.0p 2.3m 2.3m , 2.5m 5.5k% 5.5k 1.1 kA 2.Op0 2.0p 2.OP0 2.3m 2.3m 2.3m 200J 200J 200J N-E E E TO 18 TO 18 T018 DB0 DB0 , 1.0n 0.0 0.0 0.0 20 20 20 1.0m 750u ,75m 2.5m 2.5m 2.5m 1.1k 1.5kA 1.5k 2.0p 2.Op0 2.0p 2.3m 2.3m 2.3m , % A u 102 TO 5 R34a EE DB0 97 98 99 MFE2098 MFE2133 2N4091AÎ 1.5 1.5 1.8 10t 10t 15 20A 50 30 50 50 30A 50 10m 10m 10m 100m 25m# 30m% 1 .On 40p 0.0 0.0 15 10 14mt 1 2mt 25m 400u% 60 t 30 20p 20p 16p


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PDF NPN110. B170024 4000n d1302 transistor D1302 transistor D1303 FM1111 FM1205 D1303 DM-58, TV TIXS79 transistor d1302 DNX2
2n701

Abstract: rt930H transistor BC x36 BC199B BC198 BC197 10G1051 TF252 D10G1051 D10G1052
Text: § 25 5 40 § 4.0 4.0 5 0 10u0 1Ou0 1Ou0 100 100 100 1Om0 1Om0 1Om0 3.0 3.5 5.0 20p 20p 20p ME , § 20 § 5.0 8.0 5 0 1.Ou0 -5Oi'0 ,5Ou0 100 100 3.00 150m 10m0 1Om0 2.5 5.0 4.0 20p 20p 5.0p ME ME u7 u7 u7 100 101 102 PMT018 PMT019 PMT020 100m 100m 100m 1.3m 1.3m 769u ss ss ss 40 40 45 30 S 30 § 30 i 5.0 5.0 5 0 1.Ou0 1.Ou0 2.OU0 100 100 5.00 10m0 10m0 1.Om0 4.0 6.0 37 20p 20p 3Op0 ME , 20p 20d MEA ME ME u7 u6 u6 106 107 108 PMT1 13 PMT1 14 PMT1 16 100m 100m 100m 769u 769u 769u ss ss


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PDF B170024 4000n 2n701 rt930H transistor BC x36 BC199B BC198 BC197 10G1051 TF252 D10G1051 D10G1052
2SC631

Abstract: 2SC634 2SC632 A608 transistor pnp 2n7471 2N7481 FV918 J3030 ZA-14 2N625
Text: T018 48 CDQ10035 200m SS 15 ? 0 500n 6.0 1.0m 45 400nb 25 5.0 20p PL TO 5 0 49 CDQ10036 200m ss 30 ? 0 500n 6.0 1.0m 45 400nb 25 5.0 20p PL TO 5 0 50 CI3900 200m 2.6m j 18 18 5 0 100m 100n , CDQ10016 200m 30MI 1.1m sa 15 15 ? 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL T05 0 84 CDQ10017 200m 30MS 1.1m sa 30 30 ? 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL TO 5 85 CDQ10018 200m 30M§ 1.1m sa 45 45 7 0 500n 6.0 1.0m 16 400nb 25 2.1 20p PL TO 5 0 86 CDQ10019 200m 30MS 1.1m sa 15 15 7 0 500n


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PDF B170024 4000n 2SC631 2SC634 2SC632 A608 transistor pnp 2n7471 2N7481 FV918 J3030 ZA-14 2N625
2n3604 transistor

Abstract: 2N3604 2SC5220 2N1103 2SC5240 OC603 OC169 2SA518 T-044 2N2161
Text: 6.00 1.0m I.Om 1.0m 70 50 150 2.0p 3.5p 3.0p D D T044 R36 T044 46# 47 48* 2SA286 2N2180 2SA287 , 6.00 I.Om 500u I.Om 70 120 A 70 2.0p 6.Op0 2.0p D D T044 T024 T044 F 49* 50* 51* 2SA324 OC 169 , *J *J 18 18 18 .50 .50 50 10m 10m 10m 12u0 12u0 12u0 6.00 6.00 6.00 1 .Om I.Om I.Om 50 75 50 2.0p 2.0p 2.Od D D D T01 TOI T01 88# 89* 90* 2SA472 2SA73 2SA236 55m 55m 55m 30.MS 35M 35M 1.1m 1.1m 1.1m , 2.0p 1.9p 1.7p D D D T01 T044 T044 91* 92* 93* 2SA237 2SA72 2SA93 55m 55m 55m 35M 40M 45M 1.1m 1.1m


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PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2n3604 transistor 2N3604 2SC5220 2N1103 2SC5240 OC603 OC169 2SA518 T-044 2N2161
U22 2.5A 250V

Abstract: P1028 K1502 BFX82 FSP400 2N3379 C621 TIX882 MT101B 2N3113
Text: 10p 50p 20p 0.0 5.0 50u 120u 2.5k% 2.0p # 15m 200S 150S PE El u23 T018 T072 DB DA0 DP 16 17 18# 2SJ11 , 0.0 10 10 10 10 100uA ,10mA 300u 600uA .6mA 1.0kt 2.0p * 2.0p * 5.0d#* 1.0m 150 150 1 50S PE PE PL , 7.0m 10n .25n .25n 0.0 0.0 0.0 10 10 10 2.0m 1.0m 1.0m 8.0m 3.5m 3.5m 100u 60u% 60u% 700 t 20p # 16p , ,18kt 80k 20p # 20p # 2.0m 2.0m 175J 175J 150JA DPL DPL OS T018 T018. R038s DA0 DA0 85 86 87 FN 1034 , 0.0 0.0 15 15 80m 1.3m 2.4m 3.0m 50k 1.7k 1.5k 2.0p (z! 7.0p# 7.0d# 2.0m 2.0m 150J 175 175 MOS # #


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PDF NPN110. THP172 TIS11 TIX690 Pc-50mW; BVCBO-50V BVGSS-30V Yfs-800umhos 500mW; TIX881 U22 2.5A 250V P1028 K1502 BFX82 FSP400 2N3379 C621 TIX882 MT101B 2N3113
SFT337

Abstract: 2SB328 2SB66 2SB136 2SA65 2N2342 2SB328 npn transistor usaf512es040 2SB153 2SB154
Text: 50u 6.Ou 1.00 1.00 10Om0 1OOm0 70 t 70 t 20p A A AA R51 R51 R0109 102 # 103# 104 ASY49 ASY52 , # USAF512ES040 XB 102 150m 150m 2.0m 3.0m #s *J 40 35 16 5.0 1? 100m 1Ou0 10u 1.00 5.0 400uA 1.Om0 25 tA 30 13 , 1.0m 1.0m 1.0m 50 t 50 t 120 8.5p 20p 20p A A A R51 R51 R51 99# 100# 101 2G376 2G377 2N1115A 150m , Channel PNP or "P" Channel Field Effect Transistor Radiation Resistant Device (See above also) [71 â , 320n 200nt 130n 100nt 120m 150m 3OOm0 .30 0 3.0 0 15Om0 1OOm0 1.0m 12m0 60 20 tA 80 12 20p 2.0oE) P


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PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 SFT337 2SB328 2SB66 2SB136 2SA65 2N2342 2SB328 npn transistor usaf512es040 2SB153 2SB154
2011 - WF12P

Abstract: WF25W
Text: , 1206 1/2W Page 1 of 7 WF25P/ 20P /12P_V09 Mar.2011 FEATURE 1. 2. 3. 4. 5. High power rating , Chip-R Page 2 of 7 WF25P/ 20P /12P_V09 Mar.2011 QUICK REFERENCE DATA Item Series No. Size , WF12P 3.10 ± 0.15 1.60 ± 0.15 0.55 ± 0.10 0.50 ± 0.25 0.50 ± 0.25 102 Tt Tb Page 3 of 7 WF25P/ 20P /12P_V09 Mar.2011 Recommended Solder Pad Dimensions D W Type WF25P L W 3.7mm , resistance value. Example: 102 = 1k 16R0 = 16 16R0 102 FUNCTIONAL DESCRIPTION Product


Original
PDF WF25P, WF20P, WF12P WF25P/20P/12P WF12P) WF25P WF20P) WF20P WF12P WF25W
2n2886

Abstract: 2SC38 ST6574 2sc5250 transistor BC226 2SC511R 2SC1381 2SC111 2SC305 QD150-78
Text: .Ou0 2.00 2OOm0 80 t 20p PE T039 A 74# 2SC109A 800m 90MI 156 SJ 50 40 5.0 800m 1.Ou0 2.00 2OOm0 80 t 20p PE T039 A 75# 2SC308t 800m 90MI 4.5m IJ 100 60 5.0 500m 1.Ou0 100 15Om0 65 t# 10o PLA T05 , 3Om0 25 tA 2.0p $ PL T05 A 88 CDQ10048 800m 120M 4,5m 1 100 5.0 100 5Om0 60 t# 2Op0 PL TO 5 , § 6.7m S J 30 25 S 4 0 500m 1Ou0 100 1 5Om0 15 tA 20p MEA T051 91 PMT212 800m 130MI 1.7m SJ 45 30 S 4.0 500m 10u0 15 10Om0 6.5 20p MEA T051 0 92 2N1837Bt 800m 140MS 4.5m SJ 80 30 S 0 500m 1On0


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PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2n2886 2SC38 ST6574 2sc5250 transistor BC226 2SC511R 2SC1381 2SC111 2SC305 QD150-78
A642 transistor pnp

Abstract: D1302 d1302 transistor transistor D1303 D1303 FT57 D1103 A641 NPN transistor FM1111 A642 transistor to 92
Text: .On 0.0 0.0 0.0 20 20 20 40m .30 m ,30m 1.5 m 1.0m 1.0m 2.7k 3.6k% 3.6k 2.0p 2.Op0 2.0p 2.3m 2.3m , 2.5m 5.5k% 5.5k 1.1 kA 2.Op0 2.0p 2.OP0 2.3m 2.3m 2.3m 200J 200J 200J N-E E E TO 18 TO 18 T018 DB0 DB0 , 1.0n 0.0 0.0 0.0 20 20 20 1.0m 750u ,75m 2.5m 2.5m 2.5m 1.1k 1.5kA 1.5k 2.0p 2.Op0 2.0p 2.3m 2.3m 2.3m , % A u 102 TO 5 R34a EE DB0 97 98 99 MFE2098 MFE2133 2N4091AÎ 1.5 1.5 1.8 10t 10t 15 20A 50 30 50 50 30A 50 10m 10m 10m 100m 25m# 30m% 1 .On 40p 0.0 0.0 15 10 14mt 1 2mt 25m 400u% 60 t 30 20p 20p 16p


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PDF NPN110. FT4020 FT4021 FT4022 BVCEO-45V ICBO-10nA BVCEO-60V A642 transistor pnp D1302 d1302 transistor transistor D1303 D1303 FT57 D1103 A641 NPN transistor FM1111 A642 transistor to 92
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