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mxic

Abstract: PM-0254
Text: IUDCIC FEATURES · 524,288x8/262,144x16 switchable · Fast access lime: 120/150/200ns · Low power consumption - 50mA maximum active current - 100nAmaximum standby current · Programming and erasing voltage 12V ± 5% · Command register architecture - Byte/Word Programming ( 50 |a s typical) - Chip Erase (1 sec typical) - Auto chip erase 30 sec typical (including preprogramming time) - Block Erase (16384 bytes by 32 blocks or 8,912 words by 32 blocks) MX28F41QO 4M -BIT [51S K X 8) CMOS FLASH MEMORY · Auto Erase


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PDF 288x8/262 144x16 120/150/200ns 100nAmaximum MX28F41QO 100mA 44-pin 48-pin X28F4100 -1-A17 mxic PM-0254
h5ra

Abstract: NTE 5432
Text: IV IX 2 S F 2 1 O O B 2M BIT[256K x 8 / 1 28K x 1 6} CMOS FLASH MEMORY FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V ± 7% Command register architecture - Byte/Word Programming (5 0 ns typical) - Auto chip erase 5 sec typical (including preprogramming time) - Block Erase (Any one from 5 blocks: 16K-Byte x1, 8K-Byte x2, 96K-Byte x1, and 128K-Byte x1) -


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PDF 144x8/131 072x16 70/90/120ns 100nAmaximum 16K-Byte 96K-Byte 128K-Byte 100mA Q0-Q15 XX90H h5ra NTE 5432
Not Available

Abstract: No abstract text available
Text: MXIC ip ^ iy Ë a iM Â i^ Y MX28F21 OOT 2 M - B I T ( 2 5 6 K x 8 / 1 2 8 K x 1 6 ) C M O S FLASH M E M O R Y FEA TU RES 262,144x8/131,072x16 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100nAmaximum standby current Programming and erasing voltage 12V + 7% Command register architecture - Byte/Word Programming (5 0 |is typical) - Auto chip erase 5 sec typical (including preprogramming time) - Block Erase (Any one from 5 blocks: 16K


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PDF MX28F21 144x8/131 072x16 70/90/120ns 100nAmaximum 16K-Byte 96K-Byte 128K-Byte MX28FS100T MX28F21OOT
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