The Datasheet Archive

SF Impression Pixel

Search Stock

IMO Precision Controls Ltd
21.1510M/8-E TERMINAL BLOCK, PLUGGABLE, 8POS, 16AWG; Pitch Spacing:3.81mm; No. of Positions:8Ways; Wire Size (AWG):28AWG to 16AWG; Conductor Area CSA:1.5mm2; Wire Connection Method:Screw; Rated Current:10A; Rated Voltage:250V; Product Range:-; RoHS Compliant: Yes
21.1510M/8-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark 21.1510M/8-E Bulk 78 1 $3.55 $3 $2.78 $2.65 $2.65 More Info
element14 Asia-Pacific 21.1510M/8-E Each 78 1 $3.33 $3.07 $2.65 $2.49 $2.49 More Info
Farnell 21.1510M/8-E Each 78 1 £2.27 £1.83 £1.62 £1.29 £1.29 More Info
IMO Precision Controls Ltd
20.1510M/8-E TERMINAL BLOCK, PLUGGABLE, 8POS, 16AWG; Pitch Spacing:3.5mm; No. of Positions:8Ways; Wire Size (AWG):28AWG to 16AWG; Conductor Area CSA:1.5mm2; Wire Connection Method:Screw; Rated Current:10A; Rated Voltage:250V; Product Range:-; RoHS Compliant: Yes
20.1510M/8-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark 20.1510M/8-E Bulk 0 1 $3.55 $3 $2.78 $2.65 $2.65 More Info
element14 Asia-Pacific 20.1510M/8-E Each 0 1 $3.33 $3.07 $2.65 $2.49 $2.49 More Info
Farnell 20.1510M/8-E Each 5 1 £2.35 £1.89 £1.68 £1.34 £1.34 More Info
IMO Precision Controls Ltd
20.910M/8-E TERMINAL BLOCK, PLUGGABLE, 8POS, 14AWG; Pitch Spacing:5mm; No. of Positions:8Ways; Wire Size (AWG):28AWG to 14AWG; Conductor Area CSA:1.5mm2; Wire Connection Method:Screw; Rated Current:17.5A; Rated Voltage:450V; Product Range:-; RoHS Compliant: Yes
20.910M/8-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark 20.910M/8-E Bulk 0 1 $3.62 $3.06 $2.83 $2.7 $2.7 More Info
element14 Asia-Pacific 20.910M/8-E Each 0 1 $3.46 $3.19 $2.75 $2.59 $2.59 More Info
Farnell 20.910M/8-E Each 0 1 £2.65 £2.52 £2.38 £2.24 £2.24 More Info
Raltron Electronics Corporation
10M8E10700KH BAND PASS FILTER
10M8E10700KH ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Richardson RFPD 10M8E10700KH 0 1 - - - - - More Info
IMO Precision Controls Ltd
21.910M/8-E TERMINAL BLOCK, PLUGGABLE, 8POS, 14AWG
21.910M/8-E ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Farnell 21.910M/8-E Each 0 1 £2.19 £2.16 £2.04 £1.9 £1.9 More Info

10 M8E datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
10 M8E 10 M8E ECAD Model Raltron Electronics Electromechanical Filter 10.7 MHz BPF, 5 dB IL, 2 dBm Inband ripple Original PDF
10M8E 10M8E ECAD Model Raltron Electronics MONOLITHIC CRYSTAL FILTER Original PDF

10 M8E Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - Mitsumi m28n-2

Abstract: M36N1 M15E-1 mitsumi M25N M25E-4E M25E-4 M25E4E MITSUMI M25E-4 M33E-3 M33N-3
Text: Connection Electric Tools Cameras All Kind of Power Vending Machines Assist connection Model M8E -1 M8E -2 M8E -3 M15E-1 M15E-2 M20E-1 M20N-8 M24N-1 M25E-3 M25E-4 M25E-4E M25E- 10 M25E-11 M25E-12 M25E-13 M25N , -3 M29BL-1/2 M30N-1 M24BL-2 M25E- 10 M25E-4/4E M25E-3/12 M25E-11/13 M28N-2 M28N-1 6.1 10 M8E -1 12.5 12.7 14.5 M8E -2 M15E-1 M20E-1 M20N-8 M24N-1 M25N-1 18.5 19.6 20 M8E -3 M15E-2 23 25 26.5 30 30.5 30.7 32.6 , ; 9. Starting current ; 10 . Rotational direction ; 11. Shaft diameter (mA) (mN·m) (mA) cw/ccw ( )L


Original
PDF Au1/13 M28N-2 M28N-1 M15E-1 M20E-1 M20N-8 M24N-1 M25N-1 M15E-2 M36N-2 Mitsumi m28n-2 M36N1 mitsumi M25N M25E-4E M25E-4 M25E4E MITSUMI M25E-4 M33E-3 M33N-3
2005 - M7A transistor

Abstract: transistor M7A transistor m5c M5C SOT transistor m6e ADM1818-5ART-REEL M76 switch M6-C ADM1810 ADM1813
Text: Configurations and Function Descriptions . 5 REVISION HISTORY 10 /05-Rev. C to Rev , Conditions/Note 9 4 5.5 5.5 16 10 V V A A TA = 0°C to 105°C TA = -40°C to +105°C VCC = , -5, ADM1813-5 ADM1810- 10 , ADM1811- 10 , ADM1812- 10 , ADM1813- 10 ADM1815-5, ADM1816-5, ADM1817-5, ADM1818-5 ADM1815- 10 , ADM1816- 10 , ADM1817- 10 , ADM1818- 10 ADM1815-20, ADM1816-20, ADM1817-20, ADM1818 , 2.25 V 3.5 3.1 5.5 5.5 100 150 7.5 7.5 10 250 k k pF ms 100 1 100


Original
PDF ADM1810-ADM1813/ADM1815-ADM1818 ADM1810, ADM1812, ADM1815, ADM1817 ADM1811, ADM1813, ADM1816, ADM1818 M7A transistor transistor M7A transistor m5c M5C SOT transistor m6e ADM1818-5ART-REEL M76 switch M6-C ADM1810 ADM1813
Not Available

Abstract: No abstract text available
Text: MITSUMI DC Mini-Motors M8E -2 Series DC Mini-Motors APPLICATIONS Security camera SPECIFICATIONS Items Specifications 1.5V 0.8~3.0V 0.098mN · m 9,500rpm 65mA or less 0.27mN · m CW/CCW Rated Voltage Voltage Range Rated Load No Load Speed No Load Current Starting Torque Rotation *Characteristics and the shaft length can be customized. CHARACTERISTICS 0.10 50 0.5 , ) Efficiency (%) Power (W) N 0.3 0.2 0.02 10 0.1 0.00 0 6000 I 4000 2000


Original
PDF 098mN 500rpm
2003 - M7A transistor

Abstract: transistor M7A transistor m5c 212 s sot-23 10 M7C ADM1818-5ART-REEL ADM1810 ADM1815-R22ART-REEL7 ADM1812 ADM1813
Text: Conditions/Note 9 4 5.5 5.5 16 10 V V µA µA TA = 0°C to 105°C TA = ­40°C to +105°C VCC = , Current 8 mA OUTPUT VOLTAGE VCC TRIP POINT ADM1810-5, ADM1811-5, ADM1812-5, ADM1813-5 ADM1810- 10 , ADM1811- 10 , ADM1812- 10 , ADM1813- 10 ADM1815-5, ADM1816-5, ADM1817-5, ADM1818-5 ADM1815- 10 , ADM1816- 10 ADM1817- 10 , ADM1818- 10 ADM1815-20, ADM1816-20 ADM1817-20, ADM1818-20 ADM1815-R23, ADM1816-R23 , 10 pF 250 ms OUTPUT CAPACITANCE RESET ACTIVE TIME 100 VCC DETECT TO RESET Falling


Original
PDF ADM1810 ADM1813/ADM1815 ADM1818 ADM1810, ADM1812, ADM1815, ADM1817) ADM1811, ADM1813, ADM1816, M7A transistor transistor M7A transistor m5c 212 s sot-23 10 M7C ADM1818-5ART-REEL ADM1815-R22ART-REEL7 ADM1812 ADM1813
1999 - ADM1810

Abstract: transistor m5c ADM1818 ADM1817 ADM1816 ADM1815 ADM1813 ADM1812 ADM1811 transistor m6e
Text: Addition of New Text to ADM1813 and ADM1818 Section .4 10 /05-Rev. C to Rev. D Updated Format , Typ Max Unit Comments 9 4 5.5 5.5 16 10 V V A A TA = 0°C to 105°C TA = , -5, ADM1812-5, ADM1813-5 ADM1810- 10 , ADM1811- 10 , ADM1812- 10 , ADM1813- 10 ADM1815-5, ADM1816-5, ADM1817-5, ADM1818-5 ADM1815- 10 , ADM1816- 10 , ADM1817- 10 , ADM1818- 10 ADM1815-20, ADM1816-20, ADM1817-20, ADM1818 , 2.25 V 3.5 3.1 5.5 5.5 100 150 7.5 7.5 10 250 k k pF ms 10 150 250


Original
PDF ADM1810 ADM1813/ADM1815 ADM1818 150ms ADM1811/ADM1816 ADM181x ADM181x OT-23) transistor m5c ADM1818 ADM1817 ADM1816 ADM1815 ADM1813 ADM1812 ADM1811 transistor m6e
2002 - transistor M7A

Abstract: ADM181X ADM1818 ADM1816 ADM1815 ADM1813 ADM1812 ADM1811 ADM1810 ADM1817
Text: Voltage Monitor with Reset Output Supports Monitoring of Supplies Within 5%, 10 %, 15%, and 20 , N Y 5%, 10 % 5%, 10 % 5%, 10 % 5%, 10 % 20% 20% 20% 10 %, 20% 5.5k RESET MONITOR VCC , ) VCC ­ 0.5 VCC ­ 0.1 @ 0 µA to 500 µA V VCC TRIP-POINT ADM1810­5, ADM1810­ 10 , ADM1811­5, ADM1812­5, ADM1813­5 ADM1811­ 10 , ADM1812­ 10 , ADM1813­ 10 ADM1818­ 10 ADM1815­20, ADM1816­20, ADM1817 , INTERNAL PULL-UP RESISTOR ADM1811/ADM1813/ADM1816/ADM1818 3.5 5.5 7.5 k 10 pF OUTPUT


Original
PDF ADM1810 ADM1813/ADM1815 ADM1818 ADM1810, ADM1812, ADM1815, ADM1817) ADM1811, ADM1813, ADM1816, transistor M7A ADM181X ADM1818 ADM1816 ADM1815 ADM1813 ADM1812 ADM1811 ADM1817
1999 - C3459

Abstract: m7a sot23 transistor M7A M6A sot-23 ADM1816 ADM1815 ADM1813 ADM1812 ADM1811 M7A transistor
Text: Voltage Monitor with Reset Output Supports Monitoring of Supplies Within 5%, 10 %, 15% and 20% Tolerance , SUPPLY Voltage Current 1.2 VCC TRIP-POINT ADM1810-5, ADM1810- 10 , ADM1810-15/ ADM1811/ADM1812/ADM1813-5 ADM1811/ADM1812/ADM1813- 10 ADM1811/ADM1812/ADM1813-15 ADM1815/ADM1816/ADM1817/ ADM1818-5 ADM1815/ADM1816/ADM1817/ ADM1818- 10 ADM1815/ADM1816/ADM1817/ ADM1818-20 INTERNAL PULL-UP RESISTOR , 4.75 4.49 4.24 V V V (5%) ( 10 %) (15%) 2.98 3.06 3.15 V (5%) 2.80 2.88


Original
PDF ADM1810 ADM1813/ADM1815 ADM1818 ADM1810, ADM1812, ADM1815 ADM1817) ADM1811, ADM1813, ADM1816 C3459 m7a sot23 transistor M7A M6A sot-23 ADM1813 ADM1812 ADM1811 M7A transistor
GY SOT-23

Abstract: m7a sot23 M1817T M1815A ADM processor
Text: Supplies W ithin 5%, 10 %, 15% and 20% Tolerance Active High and Low Push-Pull O utput Choices (ADM 1810, A , -5, ADM1810- 10 , ADM1810-15/ ADM1811/ADM1812/ADM1813-5 ADM1811/ADM1812/ADM1813- 10 ADM1811/ADM1812/ADM1813-15 ADM1815/ADM1816/ADM1817/ ADM1818-5 ADM1815/ADM1816/ADM1817/ ADM1818- 10 ADM1815/ADM1816/ADM1817/ ADM1818 , 3.15 2.97 2.64 7.5 10 V V V V V V kQ pF ms Us Us (5%) ( 10 %) (15%) (5%) ( 10 %) (20%) 100 150 5 7 150 300 10 15 300 100 1 100 100 ms Us (ADM1810/ADM 1811 /ADM1812/ADM 1813) (ADM1815


OCR Scan
PDF ADM1810-ADM1813/ADM1815-ADM1818 ADM1817) ADM1818) 1810/A 1812/A 1815/A GY SOT-23 m7a sot23 M1817T M1815A ADM processor
2008 - 2SC3735

Abstract: 2SA1462 b35 sc-59 hFE CLASSIFICATION Marking B35
Text: Current Gain hFE VCE = 1.0 V, IC = 10 mA 90 200 Collector Saturation Voltage VCE(sat) IC = 10 mA, IB = 1.0 mA 0.15 0.25 V Base Saturation Voltage VBE(sat) IC = 10 mA, IB = 1.0 mA 0.80 0.85 V Gain Bandwidth Product fT VCE = 10 V, IE = - 10 mA Collector Capacitance Cob VCB = 5.0 V, IE = 0 A, f = 1.0 MHz Turn-on Time ton Storage Time , ns 12 (When tstg, IB1 = -IB2 = 10 mA) tstg Turn-off Time 40 18 ns hFE


Original
PDF 2SC3735 2SC3735 2SA1462 b35 sc-59 hFE CLASSIFICATION Marking B35
2002 - TRANSISTOR K 314

Abstract: NEC semiconductor
Text: 8.0 V IC(DC) TC = 25°C ±2.0 A PW 10 ms, Duty cycle 50%, TC = 25°C ±3.0 A , (DC) IB(DC) 0.2 A Total power dissipation PT 1.0 W Total power dissipation , VCE = 2.0 V, IC = 1.0 A 2000 Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 1.0 mA , tf µA - 30000 - 0.9 1.2 V IC = 1.0 A, IB = 1.0 mA 1.6 2.0 V IC = 1.0 A, VCC= 20 V IB1 = -IB2 = 0.5 mA RL = 20 0.5 µs 3.0 µs 1.0 µs hFE


Original
PDF 2SD2463 2SD2463 C11531E) TRANSISTOR K 314 NEC semiconductor
2005 - 2SA812

Abstract: 2SC1623
Text: · High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = - 1.0 mA) · High Voltage: VCEO = -50 V , > VCE = -6.0 V, IC = - 1.0 mA 90 200 -0.18 -0.3 V VBE -0.62 -0.68 V VCE = 6.0 V, IC = - 1.0 mA fT 180 MHz Cob Output Capacitance Note IC = -100 mA, IB = - 10 mA -0.58 VCE(sat) 600 4.5 pF VCE = -6.0 V, IE = 10 mA VCB = - 10 V, IE = 0 A, f = 1.0 MHz Note Pulsed: PW 350 s, Duty Cycle 2% hFE CLASSIFICATION Marking M4 M5 M6 M7


Original
PDF 2SA812 2SC1623 2SA812 2SC1623
2002 - NEC semiconductor

Abstract: C11531E dumper diode dumper
Text: drives of OA equipments and electric equipments. FEATURES · On-chip bias resistor: R1 = 1.0 k, R2 = 10 k · Low power consumption during driving: VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A · On-chip dumper , ) 0.03 A Total power dissipation PT 1.0 W Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C * PW 10 ms, duty cycle 50 % The information in , MIN. TYP. hFE1 * VCE = 50 V, IC = 0.2 A 700 hFE2 * VCE = 5.0 V, IC = 1.0 A 1000


Original
PDF C11531E) NEC semiconductor C11531E dumper diode dumper
2002 - 2sa1154

Abstract: 2SC2721
Text: Collector current (DC) IC(DC) 0.7 A Collector current (pulse) IC(pulse)* 1.0 A Total , 150 -55 to +150 °C * PW 10 ms, duty cycle 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° , DC current gain hFE1 VCE = 1.0 V, IC = 0.1 A * DC current gain hFE2 DC base voltage , Output capacitance Cob 90 200 VCE = 1.0 V, IC = 0.5 A * 50 150 VCE = 6.0 V, IC = 10 mA 600 400 V Gain bandwidth product fT VCB = 6.0 V, IE = 0, f = 1.0 MHz VCE = 6.0


Original
PDF 2SC2721 2SA1154 2sa1154 2SC2721
2006 - D1802

Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Text: Transistor. · High DC Current Gain: hFE = 200 TYP. (VCE = - 1.0 V, IC = -100 mA) ABSOLUTE MAXIMUM RATINGS , Current Gain hFE1 110 hFE2 50 Collector Saturation Voltage VCE = - 1.0 V, IC = -100 mA , VCE = -6.0 V, IC = - 10 mA VCE = -6.0 V, IE = 10 mA -600 Base to Emitter Voltage VBE Gain Bandwidth Product fT 160 MHz Cob 17 pF Output Capacitance Note VCE = - 1.0 V, IC = -700 mA 200 Note Note VCB = -6.0 V, IE = 0 A, f = 1.0 MHz Note Pulsed: PW 350 s, Duty


Original
PDF 2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier
2002 - Not Available

Abstract: No abstract text available
Text: mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) · On-chip bias resistor (R1 = 10 k) · , ) Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C * PW 10 ms , -0.2 -0.5 V -0.9 V 10 13.0 k 0.2 µs Input resistance R1 Turn-on time ton VCC = -5.0 V, RL = 1.0 k Storage time tstg VI = -5.0 V, PW = 2.0 µs 5.0 µs , semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 NEC


Original
PDF
2002 - Not Available

Abstract: No abstract text available
Text: mid-speed switching FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R1 = 10 kâ , ˆ’55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°C)  , voltage − 170 −0.07 7.0 V −0.57 −2.0 −0.2 −0.5 V −0.9 V 10 , VCC = −5.0 V, RL = 1.0 kΩ * Pulse test PW ≤ 350 µs, duty cycle ≤ 2 % hFE , semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 NEC


Original
PDF
2002 - d1616

Abstract: No abstract text available
Text: VCEO 50 V Emitter to base voltage VEBO 10 V Collector current (DC) IC(DC , °C * PW 10 ms, duty cycle 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° Parameter , R1/R2 0.9 1.0 1.1 - Turn-on time ton VCC = 5 V, RL = 1 k 0.5 µs Storage , semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 NEC


Original
PDF
2007 - 2SD1899-Z

Abstract: No abstract text available
Text: ±0.3 FEATURES 2.3 ±0.2 0.5 ±0.1 Note 9.5 ±0.5 4.4 ±0.2 1.0 ±0.5 0.4 MIN. 0.5 TYP , A IC(pulse) 5.0 A IB(DC) 0.5 A PT1 2.0 W PT2 10 W Junction , notch at the top of the fin is from 0 to 0.2 mm. Notes 1. PW 10 ms, Duty Cycle 50% 2 2. When , " means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1


Original
PDF 2SD1899-Z 2SD1899-Z
2002 - Not Available

Abstract: No abstract text available
Text: 10 k) · Complementary transistor with BN1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter , * PW 10 ms, duty cycle 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° Parameter Collector cutoff , E-to-B resistance 1.5 4.7 6.11 k 7 R2 3.0 3.29 R1 V 10 13 k 0.2 , semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 NEC


Original
PDF
Not Available

Abstract: No abstract text available
Text: emitter voltage VCEO 50 V Emitter to base voltage VEBO 10 V Collector current (DC , -55 to +150 °C * PW 10 ms, duty cycle 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° , R1/R2 0.9 1.0 1.1 - Turn-on time ton VCC = 5 V, RL = 1 k 0.5 µs Storage , semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 NEC


Original
PDF
2002 - 2SD1581

Abstract: No abstract text available
Text: VCE = 5.0 V, IC = 500 mA) · Low collector saturation voltage VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Symbol Ratings Unit Collector to , current (pulse) IC(pulse)* 3.0 A Total power dissipation PT 1.0 Junction temperature Tj Storage temperature Tstg 150 -55 to +150 W °C °C * PW 10 ms, duty cycle 50 , . IEBO VEB = 10 V, IC = 0 DC current gain hFE1 VCE = 5.0 V, IC = 500 mA DC current gain


Original
PDF 2SD1581 2SD1581
2002 - 2SA1376

Abstract: transistor 2sc3478 transistor 2sa1376 2sc3478a
Text: 150 -55 to +150 W °C °C * PW 10 ms, duty cycle 50% ELECTRICAL CHARACTERISTICS (Ta = 25 , current gain hFE1 * VCE = - 10 V, IC = - 10 mA 135 300/200 600/400 nA - DC current gain hFE2 * VCE = - 10 V, IC = -100 mA DC base voltage VBE * VCE = - 10 V, IC = - 10 mA , = -50 mA, IB = -5 mA -0.8 -1.2 V VCB = -30 V, IE = 0, f = 1.0 MHz 3.5 4.0 pF Output capacitance Cob fT VCE = - 10 V, IE = 10 mA Turn-on time ton Turn-off time toff


Original
PDF 2SA1376, 2SA1376/2SA1376A) 2SC3478 2SC3478A 2SA1376/2SA1376A 2SA1376 transistor 2sc3478 transistor 2sa1376 2sc3478a
2002 - 1116a

Abstract: D1619 2SB1116 nec marking power amplifier 2sb1116a
Text: (sat) VCE(sat) = -0.20 V TYP. (IC = - 1.0 A, IB = -50 mA) · High PT in small dimension with general-purpose PT = 0.75 W, VCEO = -50/-60 V, IC(DC) = - 1.0 A · Complementary transistor with 2SD1616 and 1616A , base voltage VEBO -6.0 Collector current (DC) IC(DC) - 1.0 A Collector current , W °C Storage temperature Tstg 150 -55 to +150 V V °C * PW 10 ms, duty cycle , = -2.0 V, IC = -100 mA 135 DC current gain hFE2 * VCE = -2.0 V, IC = - 1.0 A 81 -600


Original
PDF 2SB1116, 2SD1616 2SB1116 2SB1116A 1116a D1619 nec marking power amplifier 2sb1116a
2002 - Not Available

Abstract: No abstract text available
Text: (sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with the 2SB1116 and , V Emitter to base voltage VEBO 6.0 V Collector current (DC) IC(DC) 1.0 A , temperature Tj W °C Storage temperature Tstg 150 −55 to +150 °C * PW ≤ 10 ms , * VCE = 2.0 V, IC = 100 mA 135 DC current gain hFE2* VCE = 2.0 V, IC = 1.0 A 81 VCE =


Original
PDF 2SD1616, 2SD1616A 2SB1116 2SD1616
2002 - 2sA675

Abstract: D16146EJ3V0DS00
Text: cutoff current Symbol Conditions MIN. TYP. MAX. Unit - 1.0 µA - 1.0 µA , gain hFE1 VCE = ­3.0 V, IC = ­ 1.0 mA 60 120 DC current gain hFE2 VCE = ­3.0 V, IC = ­20 mA 50 120 300 Collector saturation voltage VCE(sat) IC = ­20 mA, IB = ­ 1.0 mA -0.10 -1.50 V Base saturation voltage VBE(sat) IC = ­20 mA, IB = ­ 1.0 mA -0.74 -1.20 V Gain bandwidth product fT VCE = ­6.0 V, IE = 10 mA 100 170 MHz


Original
PDF 2SA675 2SA675 D16146EJ3V0DS00
Supplyframe Tracking Pixel