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Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C

10 DC-1 diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - CA3039

Abstract: DIODE m14 CA30 CA3039M CA3039M96
Text: ( V F1 ­ V F2 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET VOLTAGE (mV , 10 D5 D4 12 11 D3 11 1 13 SUBSTRATE 4 5 12 14 D5 2 3 CA3039 , . .20V, -1V (Terminal 1 , 4, 5, 8 or 12 to Terminal 10 ) DC Forward Current (IF) . . . . . . . . . . , Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) RD , 3.2 - pF Magnitude of Diode Offset Voltage (Note 2) (Figure 1 ) Temperature Coefficient of


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PDF CA3039 CA3039 DIODE m14 CA30 CA3039M CA3039M96
1996 - CA3039

Abstract: diode 1334 1334 diode harris 721 CA3039M CA3039M96
Text: ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET VOLTAGE (mV) DC FORWARD , BETWEEN TERMINALS 1 , 4, 5, 8, OR 12 AND SUBSTRATE (TERMINAL 10 ) (V) DC REVERSE VOLTAGE ACROSS DIODE (V , (Terminal 1 , 4, 5, 8 or 12 to Terminal 10 ) DC Forward Current (IF) . . . . . . . . . . . . . . . . . . . . , tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6) RD f = 1kHz , pF Magnitude of Diode Offset Voltage (Note 2) (Figure 1 ) Temperature Coefficient of |VF1 - VF2


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PDF CA3039 CA3039 1-800-4-HARRIS diode 1334 1334 diode harris 721 CA3039M CA3039M96
1999 - CA3039

Abstract: pa 3029 b CA3039M CA3039M96 CD 07
Text: DIODE OFFSET ( V F1 ­ V F2 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET , (ANY DIODE ) AND DIODE OFFSET VOLTAGE vs DC FORWARD CURRENT 100 1 100 10 0.5 0.4 , D3 D2 4 10 D1 9 DS 8 5 9 NC 10 D5 D4 12 11 D3 11 1 13 , Voltage (VDI) for D1 - D5 . . . . . . . . . . . .20V, -1V (Terminal 1 , 4, 5, 8 or 12 to Terminal 10 ) DC , Reverse Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6


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PDF CA3039 CA3039 pa 3029 b CA3039M CA3039M96 CD 07
CA3039

Abstract: 10 DC-1 diode CA3039M CA3039M96
Text: 0.01 0.1 1 10 DC FORWARD CURRENT (mA) FIGURE 6. DIODE RESISTANCE (ANY DIODE ) vs DC FORWARD CURRENT O , 1 ns Typical • Matched Monolithic Construction - VF Matched Within 5mV • Low Diode , 0.022 100 nA Magnitude of Diode Offset Voltage (Note 1 ) (Figure 1 ) lVF1~VF2Ì lF = 1mA - 0.5 5.0 mV , Diode (Ds) VF lF = 1mA - 0.65 - V Reverse Recovery Time >rfi lF= 10mA, lR = -10mA - 1.0 - ns Diode , VOLTAGE DROP (ANY DIODE ) AND DIODE OFFSET VOLTAGE vs DC FORWARD CURRENT c DC m u 0.1 0.001 1 Vr


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PDF 43D2271 CA3039 CA3039 M302271 10 DC-1 diode CA3039M CA3039M96
CA3038

Abstract: ca3039
Text: TEMPERATURE 0.01 0.1 1 10 TEMPERATURE (°C) FIGURE 5. DC FORWARD VOLTAGE DROP (ANY DIODE ) vs TEMPERATURE DC FORWARD CURRENT (mA) FIGURE 6. DIODE RESISTANCE (ANY DIODE ) vs DC FORWARD CURRENT 6 - 1 3 , i L L > I LL > - nA nA VR = -10V Magnitude of Diode Offset Voltage (Note 1 ) (Figure 1 , = 1mA VR = -2V, Ip = 0 VD I = 4V, Ip = 0 25 - 1.0 30 0.65 3.2 45 ns n pF pF 1 , DC FORWARD CURRENT (mA| FIGURE 1 . DC FORWARD VOLTAGE DROP (ANY DIODE ) AND DIODE OFFSET VOLTAGE vs DC


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PDF CA3039 CA3039 CA3038
2012 - Not Available

Abstract: No abstract text available
Text: PIN diode SP2T switches handle high power signals from 50 MHz to 1 GHz, 400 MHz to 4 GHz respectively , Incident Power (Note 2) Pinc(Pk) Condition 1 , 10 µs pulse width, 1 % duty cycle, 1.5: 1 source & , MHz, P1 = P2 = 10 dBm Switching Time (Note 1 ) Input 3rd Order Intercept Point 2 60 dB , dBm Pinc(Pk) Condition 1 , 10 µs pulse width, 1 % duty cycle, 1.5: 1 source & load VSWR (IL , = 10 dBm TX Peak Incident Power (Note 2) Switching Time (Note 1 ) Input 3rd Order Intercept


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PDF MSW2010-201 MSW2011-201 MSW2010-201, MSW2011-201,
2012 - Not Available

Abstract: No abstract text available
Text: PIN diode SP2T switches handle high power signals from 50 MHz to 1 GHz, 400 MHz to 4 GHz respectively , Incident Power (Note 2) Pinc(Pk) Condition 1 , 10 µs pulse width, 1 % duty cycle, 1.5: 1 source & , Voltage IIP3 Switching Time (Note 1 ) F1 = 500 MHz, F2 = 510 MHz, P1 = P2 = 10 dBm 2 60 dB , dBm Pinc(Pk) Condition 1 , 10 µs pulse width, 1 % duty cycle, 1.5: 1 source & load VSWR (IL , = 10 dBm TX Peak Incident Power (Note 2) Switching Time (Note 1 ) Input 3rd Order Intercept


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PDF MSW2010-201 MSW2011-201 MSW2010-201, MSW2011-201,
1996 - diode 1334

Abstract: 1334 diode power diode with piv of 30v CA3141E MS-001-BB high voltage diodes e16 diode CA3141 533 1334 diode VF10
Text: MAGNITUDE OF ANODE CURRENT (µA) 1 10 FIGURE 3. 3. DIODE OFFSET VOLTAGE vs MAGNITUDE OF ANODE , 0.2 0 0.1 1 10 102 103 1 0.4 IF = 3mA IF = 1mA IF = 300µA IF = 100µA IF = , 25oC 1 DIODE CAPACITANCE (pF) DIODE OFFSET VOLTAGE (mV) 3 (Continued) 2 1.5 0.8 , 5 10 15 20 CATHODE-TO-SUBSTRATE DC REVERSE VOLTAGE (V) FIGURE 6. DIODE CATHODE-TO-SUBSTRATE , 10V 10 1 0.1 0.01 0.01 CATHODE (TERMINALS 3, 6, 14) 4 1 2 3 4 5 6 7 8 9 10


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PDF CA3141 CA3141E CA3141 1-800-4-HARRIS diode 1334 1334 diode power diode with piv of 30v MS-001-BB high voltage diodes e16 diode 533 1334 diode VF10
2002 - CA3039

Abstract: CA3039M CA3039M96
Text: ( VF1 ­ V F2 ) 0.5 0.01 1 0.1 1 DC FORWARD CURRENT (mA) 10 DIODE OFFSET VOLTAGE (mV , . NO. Pinouts CA3039 (SOIC) TOP VIEW 1 D4 DS D 6 NC 6 7 2 D1 3 D2 10 9 NC 10 D5 D4 12 D6 D3 D2 11 D3 11 1 13 SUBSTRATE 4 5 12 14 , Voltage (VDI) for D1 - D5 . . . . . . . . . . . 20V, -1V (Terminal 1 , 4, 5, 8 or 12 to Terminal 10 ) DC , Reverse Recovery Time tRR IF = 10mA, IR = -10mA - 1.0 - ns Diode Resistance (Figure 6


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PDF CA3039 CA3039 CA3039M CA3039M96
ECG905

Abstract: diodo 376 diodo 10 A
Text: 17 E D {□(□53^20 □□D3Sci5 1 ECG905 DIODE ARRAY On* (»od« "Ou*d" and Two laolatad Diodo , Reverse Current (Ir) = - 10 ^ A 4 6 V • DC Reverse Breakdown Voltage Between any Diode Unit and , Reverse Voltage (Vr) =-4 V • 0.0055 10 mA 3 DC Reverse (Leakage) Current Between any Diode Unit and Substrate |R • DC Reverse Voltage (Vr) =-4 V • 0.010 10 /¿A • Magnitude of Diode Offset Voltage (Difference in DC Foiward Voltage Drops of any Two Diode Units) |vfi-vf2| • DC Foiward Current (If) - 1 mA â


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PDF CG905 10-Terminal ECG905 T-43-24 ECG905. 0QQ35Ii& ECG90S. ECG905 diodo 376 diodo 10 A
2012 - Not Available

Abstract: No abstract text available
Text: , E, ECN ECN 11449 12450 Revision Revision Date: Date: 11/27/2012 12/ 1 /2012 SP2T PIN Diode , 12633 REV. E, ECN 12450 Revision Date: 12/ 1 /2012 SP2T PIN Diode Switches MSW2000-200 Electrical , source & load VSWR Condition 2, 1.5: 1 source & load VSWR Condition 1 , 10 s pulse width, 1 % duty cycle, 1.5: 1 source & load VSWR (IL) 10 % -90% RF voltage F1 = 2.0 GHz, F2 = 2.01 GHz, P1 = P2 = 40 dBm Test , Condition 1 , 10 s pulse width, 1 % duty cycle, 1.5: 1 source & load VSWR (IL) 10 % -90% RF voltage F1 = 2.0


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PDF MSW2000200, MSW2001200, MSW2002200
CA3019

Abstract: RCA-CA3019 forward reverse schematic diagram ican-5299 ca3019t
Text: 7 -6 5 -3 +12 7 -6 6 -3 +12 7 -6 7 -18 0 1 ,2, 3,6, 8 0 8 -3 +12 7 -6 9 -3 +12 7 -6 10 NO , Current (I p) = 1 mA - 0.73 0.78 V DC Reverse Breakdown Voltage DC Reverse Current (lr) = - 10 mA 4 6 - V , (Leakage) Current Between any Diode Unit and Substrate DC Reverse Voltage (VR) = -4 V - 0.010 10 MA , Current (I p )= 1 mA - 1 5 mV Single Diode Capacitance Frequency (f) = 1 MHz DC Reverse Voltage (VR) = -2V - 1.8 - PF Diode Quad-to-Substrate Capacitance Frequency (f) = 1 MHz DC Reverse Voltage (VR


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PDF CA3019 ICAN-S299: RCA-CA3019 -10mA forward reverse schematic diagram ican-5299 ca3019t
2012 - Not Available

Abstract: No abstract text available
Text: DS 12633 REV. E, ECN 12450 Revision Date: 11/27/2012 Revision Date: 12/ 1 /2012 SP2T PIN Diode , €¢ www.aeroflex.com/metelics Document DS 12633 REV. E, ECN 12450 Revision Date: 12/ 1 /2012 SP2T PIN Diode Switches , Tx Peak Incident Power (Note 2) Pinc(Pk) Condition 1 , 10 µs pulse width, 1 % duty cycle, 1.5: 1 source & load VSWR (IL) - - 57 dBm Switching Time (Note 1 ) tSW 10 % -90% , (Pk) Condition 1 , 10 µs pulse width, 1 % duty cycle, 1.5: 1 source & load VSWR (IL) - -


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PDF MSW2000â MSW2001â MSW2002â
7901 rectifier

Abstract: delco remy alternators Renard press fit alternator diodes diode LR 105 DL 7760 DIODE RECTIFIER press fit alternator diode 65 amp Delco 7820
Text: Diodes ENGINEERING DATA - DIODE GENERAL DESCRIPTION FOR 1 /2" PRESS-FIT DIODES The Renard , available. INSTALLATION PROCEDURES: MOUNTING PROCEDURE - 1 /2" PRESS-FIT DIODE This unit is designed for , 275 6.47 6 98 7701 HL 502 506 12 75 12 86 7720 HL 1 050 1 135 26.67 28.82 7721 DS - 395 - 10 04 , 1 245 1.295 7900 H 255 275 6.47 6 98 7901 d2 502 506 12 75 12.86 7920 HL .410 540 10 42 13 72 7921 DS - 395 - 10 04 7960 HB 095 105 2 42 2.66 7961 DL 1 100 1 200 27 94 30 48 DL SEATING


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PDF
2004 - LD162DZ_DS

Abstract: No abstract text available
Text: 1 2 3 4 5 VBC , (V) Ver. G0, 2/27/04 8 Euvis Laser Diode Driver, LD162DZ , _5G4 @ 01/09/2004 Version: G0 Revision: (none) Euvis Laser Diode Driver, LD162DZ OC-192/STM-64/10GbE LD162DZ_G0 Differential Laser Diode Driver 32-Pin QFN package PRODUCT DESCRIPTION The LD162DZ is a low-power high-speed laser diode driver designed for fiber optic communication systems such as SONET OC-192, SDH STM-64 and 10 Giga-Bit Ethernet. This chip can deliver a maximum modulation current


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PDF LD162DZ LD162DZ OC-192/STM-64/10GbE 32-Pin OC-192, STM-64 LD162DZ_DS
RCA-CA3039

Abstract: CA3039 CA3039T MONOLITHIC DIODE ARRAYS RCA CA3039 21aoi
Text: Diode (D$) vF Ip = 1 mA - 0.65 - V - Reverse Recovery Time «ir Ip « 10 mA, Ir = 10 mA - 1 - ns - , LEAD TEMPERATURE (During Soldering) At distance 1 /16 ± 1 /32 inch (1.59 ± 0.79mm) from case for 10 , Diode-to-Substrate Voltage, Vpj for Dj-Dg (term. 1 ,4,5,8 or 12 to term. 10 ) +20, - 1 V DC Forward Current, Ip , - 10 /iA 5 7 - V - DC Reverse Breakdown Voltage Between any Diode Unit and Substrate V(BR)R lR = - 10 , ) Current Between any Diode Unit and Substrate |R VR = - 10 V - 0.022 100 nA 4 Magnitude of Diode Offset


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PDF CA3039 RCA-CA3039 92CS-I5261 750ai CA3039 SJCS-1526' CA3039T MONOLITHIC DIODE ARRAYS RCA CA3039 21aoi
2014 - RF2 2A 250V

Abstract: No abstract text available
Text: Configuration SPST-NO + 1A1B SPST-NC 2C DPDT Note 1 : With diode : terminal 1 –, terminal 8 + Note 2: With diode of reverse polarity coil: terminal 1 +, terminal 8 – Note 3: Use this chart for , Blank Standard L With LED indicator D With diode (Note 1 ) With diode of reverse polarity coil (Note 2) With LED indicator & diode (Note 1 ) With LED indicator & diode of reverse , diode ) 25ms max. (at the rated coil voltage, excluding contact bounce time, with diode ) NO contact: 10


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PDF EN50205 UL60947-4-1A E55996 LR35144 EN50/ EP1471-0 RF2 2A 250V
DIODE AM MODULATOR

Abstract: DIODE T25 T432 ECG905 k3am
Text: 25°C ^- CHARACTERISTICS APPLY FOR EACH DIODE UNIT, UNLESS OTHERWISE SPECIFIED. 1 T-43-24 TEST , Reverse Breakdown Voltage Between any Diode Unit and Substrate V(BR)R - DC Reverse Current (Ir)=- 10 m A 25 , 0.010 10 • Magnitude ol Diode Offset Voltage (Difference in DC Foiward Voltage Drops of any Two Diode Units) |vfi-vf2| • OC Foiward Current (If) - 1 mA - 1 5 mV • Single Diode Capacitance CD • Frequency (f) = 1 MHz DC Reverse Voltage (Vr)=-2 V - 1.8 - PF 4 Diode Quad-to-Substrate Capacitance Cdq


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PDF CG905 10-Terminal ECG905 T-43-24 ECG905. DIODE AM MODULATOR DIODE T25 T432 ECG905 k3am
Not Available

Abstract: No abstract text available
Text: 1 , 4, 5, 8, OR 12 AND SUBSTRATE (TERMINAL 10 ) (V) DC REVERSE VOLTAGE ACROSS DIODE (V) FIGURE , (Terminal 1 , 4, 5, 8 or 12 to Terminal 10 ) DC Forward Current (Ip , (Figure 1 ) TEST CONDITIONS - 0.81 0.90 V V (BR)R Ipj = - 10 |iA 5 7 - V DC Reverse Breakdown Voltage Between Any Diode Unit and Substrate V (BR)R Ipj = - 10 |iA 20 , Coefficient of |Vp-| - Vp 2 l (Figure 4) Tl M agnitude of Diode Offset Voltage (Note 2) (Figure 1


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PDF CA3039 CA3039
varistor sl 22

Abstract: 110240 99.80.9.024.99 86.10.0.024.0000 99.02.0024.59 9902922099 Diode K 624 tag 8610 varistor 222 4410A
Text: 95 Series - Sockets and accessories for 41 series relays 41 95.15.2 095.41.3 095.42 10 A - 250 V * 6 kV (1.2/50 µs) between coil and contacts IP 20 ­40.+70 * For currents > 10 A , 12 14 A1 9.5 12 11 14 A2 22 21 24 Ø 3.2 A2 1 21 7.45 A2 11 7.45 , retaining clip SL Plastic retaining clip 9 5 . 1 36 3 . 2 95.15.2 Copper side view Packaging codes 9 5 . 1 A2 1.5 1.5 A1 41.61 Without retaining clip 9.2 95 Series


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PDF
RCA-CA3019

Abstract: CA3019 ICAN-S299 ca3019t ican-5299
Text: -3 +12 7 -6 7 -18 0 1 ,2, 3,6, 8 0 8 -3 +12 7 -6 9 -3 +12 7 -6 10 NO CONNECTION CASE , Diode Unit and Substrate DC Reverse Voltage (VR) = -4 V - 0.010 10 KA Magnitude of Diode Offset Voltage (Difference in DC Forward Voltage Drops of any Two Diode Units) DC Forward Current ( 1 p )= 1 m A - 1 5 mV Single Diode Capacitance Frequency (f) = 1 MHz DC Reverse Voltage (VR) = -2V - 1.8 - PF Diode Quad-to-Substrate Capacitance Frequency (f) = 1 MHz DC Reverse Voltage (VR) between Terminal 2,5,6, or 8 of Diode


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PDF 014SIM CA3019 ICAN-S299: RCA-CA3019 -10mA ICAN-S299 ca3019t ican-5299
2012 - Not Available

Abstract: No abstract text available
Text: surface mount silicon PIN diode SP2T switches handle high power signals from 50 MHz to 1 GHz, 400 MHz to , load VSWR 43 dBm tSW 10 % -90% RF voltage 3 µs 57 dBm Switching Time (Note 1 , Units 1000 50 Max. Value 20 22 0.25 2 Condition 1 , 10 µs pulse width, 1 % duty , load VSWR 43 dBm tSW 10 % -90% RF voltage 2 µs 57 dBm Switching Time (Note 1 , Units 4000 400 Max. Value 15 18 0.4 1.5 Condition 1 , 10 µs pulse width, 1 % duty


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PDF MSW2000â MSW2001â MSW2002â
2006 - AN-957

Abstract: circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
Text: , 10 2 20 1 100 ATTENUATION, SHUNT OR SERIES Figure 23. CW Power Multiplier vs. Diode , varied over a range of approximately 1 to 10 K through the use of a DC or low frequency control , . 6. AN 979, Handling and Bonding of Beam Lead Devices. Equation- 1 The conductance of the diode is , ( 1 ) dt where Id = Diode current id(j) Qd Qd =Charge stored in the diode () (3) 1 + j , value can vary by as much as 3: 1 from diode to diode . For switching or pulse modulating application


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PDF have5771-26 5965-8666E AN-957 circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
diodos led

Abstract: DIODE CQ ECG907 diodos 50yuA
Text: ) VF lF = 1 mA - 0.65 - V - Reverse Recovery Time •rr If 10 mA, Ir - 10 mA - 1 - ns - Diode , Voltage, Vj)i for Di-D5 (term. 1 ,4,5,8 or 12 to term, 10 ) +20, - 1 V DC Forward Current, Ip , - DC Reverse Breakdown Voilage Between any Diode Unit and Substrate V(BR)R Ir»- 10 m A 20 - - V - , Diode Unit and Substrate |R VR = - 10 V - 0.022 100 iiA 4 Magnitude of Diode Offset Voltage (Difference in DC Forward Voltage Drops of any Two Diode Units) |VF,-VF2| lF - 1 mA - 0.5 5 mV 2 Temperature


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PDF ECG907 T-43-24 ECG907 diodos led DIODE CQ diodos 50yuA
2005 - DPDT relay 12v

Abstract: 12V 10A RELAY RH2LB-U-DC24 U908 relay 240v 10a pcb rh2lb-u RH2B-ULAC24V RH2B-UDC12V RH3B-UTAC120V
Text: handling charges. 6. Terms of Payment: One percent ( 1 %) discount if paid within ten ( 10 ) days from date , $7.90 RH1V2-UD-DC12V RH GP Rly SPDT 10A 12V DC Coil w/ diode 10 0 $9.90 RH1V2-UD-DC24V RH GP Rly SPDT 10A 24V DC Coil w/ diode 10 0 $9.90 RH1V2-ULCDC24V GP Rly 10A SPDT w , 0 $10.28 RH1V2-ULD-DC12V RH GP Rly SPDT 10A 12V DC Coil w/ diode & Indctr Lght 10 0 $12.28 RH1V2-ULD-DC24V RH GP Rly SPDT 10A 24V DC Coil w/ diode & Indctr Lght 10 0 $12.28


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PDF U908-0 RH4B-UD-DC48V RH4B-ULAC120V RH4B-ULAC120V RH4B-ULAC12V RH4B-ULAC12V RH4B-ULAC240V RH4B-ULAC240V RH4B-ULAC24V RH4B-ULAC24V DPDT relay 12v 12V 10A RELAY RH2LB-U-DC24 U908 relay 240v 10a pcb rh2lb-u RH2B-ULAC24V RH2B-UDC12V RH3B-UTAC120V
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