The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1992-10CMS8#TR Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LTC1992-1CMS8 Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LTC1992-1IMS8#TR Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C
LTC1992-2IMS8 Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 85°C
LTC1992-5HMS8#TR Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C
LTC1992HMS8 Linear Technology LTC1992 Family - Low Power, Fully Differential Input/Output Amplifier/Driver Family; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C

1.5um cmos process family Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - TOKO Catalogue

Abstract: an5183 mt8870 ic 1.5um cmos process family AN4883 sl1461sa murata saw filter pdf/18834 880nm transceiver MITEL MSAN
Text: CWF1201 CWF1501 CWF2001 CWF2501 CWF3001 CWF4001 CWF5001 CWF9001 CWF9910 CWF9940 0.8um Analog CMOS 1.2um CMOS Process Family 1.5um CMOS Process Family 2 um CMOS Process Family 2.5um CCD Process 3.0um CMOS Process Family 4.0um CMOS Process Family 5.0um CMOS Process Family 9.0um Metal Gate CMOS Process One Time , Synthesizer Audio Processor System Controller and Data Modem Mitel Bipolar HG Process Mitel Bipolar HJ Process Mitel Bipolar Technology Suite Mitel Bipolar WPC Process Mitel Bromont Process Selection Guide Quality


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PDF 1A184A 870nm, 140MHz 850nm, 35MHz 880nm, 45MHz 860nm, 70MHz TOKO Catalogue an5183 mt8870 ic 1.5um cmos process family AN4883 sl1461sa murata saw filter pdf/18834 880nm transceiver MITEL MSAN
1995 - 1.2 Micron CMOS Process Family

Abstract: CMOS Process Family 5-Micron-CMOS-Process 1.5um cmos process family 0.6 um cmos process
Text: 1.5 Micron CMOS Process Family ® June 1995 Features Process Parameters · Double , = 1.5µm 11-13 1.5 Micron CMOS Process Family Capacitances (fF/µm2) Resistances (/sq , · 2.7~3.6 Volts Low Voltage Option · 1.5µm Process Parameters 5volts & 3volts , Description The 1.5µm process provides flexibility, speed and packing density needed in mixed signal designs , for improved dynamic range. A process module can be integrated to provide high precision and very low


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2001 - datasheet VMOS Transistor

Abstract: CMOS Process Family 1.2 Micron CMOS Process Family
Text: 1.5 Micron CMOS Process Family Features · LOVMOS Processes (2.7~3.6 Volts Low Voltage Option) · , 98 1.5 Micron CMOS Process Family (cont'd) Resistances ( /sq.) Capacitances (fF/µm2) 1.5 µm , Process parameters 1.5µm Units Metal I pitch (width/space) 1.5 / 1.5 µm Metal II pitch , 1.5 x 1.5 µm Via 1.8 x 1.8 µm Gate geometry 1.5 µm The 1.5µm process provides , for Reliability against Moisture · Latchup Free Process on Non-Epi Material Achieved with Optimized I


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PDF 150mm datasheet VMOS Transistor CMOS Process Family 1.2 Micron CMOS Process Family
1999 - Not Available

Abstract: No abstract text available
Text: 1.5 Micron CMOS Process Family Features · LOVMOS Processes (2.7~3.6 Volts Low Voltage Option) · , in Canada © Mitel FTI-15-01-Rev 11 April 98 1.5 Micron CMOS Process Family (cont'd , Process parameters 1.5µm Units Metal I pitch (width/space) Metal II pitch (width/space) Poly pitch , process provides the flexibility, speed and packing density needed in mixed signal designs. The aggressive , · Latchup Free Process on Non-Epi Material Achieved with Optimized I/O Protection MOSFET


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PDF 150mm
1998 - CMOS Process Family

Abstract: P-MOSFET mosfet 4800
Text: 2 Micron CMOS Process Family Features · Double Poly / Double Metal · 4 µm Poly and Metal 1 Pitch · 320 ps Delay per stage (Ring Osc.) Process parameters Process Parameters · 5.5 Volts , 518000 Printed in Canada © Mitel FTI-20-01-Rev.8 April 1998 2 Micron CMOS Process Family (cont'd , 1.5µm Process (5 volts & 3volts) Metal I pitch (width / space) 2/2 µm · ProToDuctionTM , P+ junction depth 0.28 µm The 2µm P-Well process provides flexibility, speed and packing


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PDF 150mm CMOS Process Family P-MOSFET mosfet 4800
1996 - micron resistor

Abstract: CMOS Process Family
Text: 2 Micron CMOS Process Family ® February 1996 Features · · · · · · · · · Process Parameters Double Poly / Double Metal 4 µm Poly and Metal I Pitch 320 ps Delay per stage , = 2µm 12-15 2 Micron CMOS Process Family Capacitances (fF/µm2) Resistances (/sq.) 2 µm , 1.5µm Process Low TCR Resistor Module ProToDuctionTM Option for fast prototypes Standard Cell Library Process Parameters 2µm 5volts & 3volts Units Metal I pitch (width/space) 2/2 µm Metal


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CMOS Process Family

Abstract: No abstract text available
Text: 2 Micron CMOS Process Family Features · Double Poly / Double Metal · 4 µm Poly and Metal 1 Pitch · 320 ps Delay per stage (Ring Osc.) Process parameters Process Parameters · 5.5 Volts , Process Family (cont'd) Capacitances (fF/µm2) Resistances (¾ /sq.) 2 µm 5 volts & 3 volts 2 µm 5 , 1.5µm Process (5 volts & 3volts) Metal I pitch (width / space) 2/2 µm · ProToDuctionTM , P+ junction depth 0.28 µm The 2µm P-Well process provides flexibility, speed and packing


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PDF 150mm CMOS Process Family
1995 - CMOS Process Family

Abstract: P-MOSFET transistor P-MOSFET process of mosfet micron resistor
Text: 2 Micron CMOS Process Family ® June 1995 Process Parameters Features · Double Poly , L drawn = 2µm 11-15 2 Micron CMOS Process Family Capacitances (fF/µm2) Resistances (/sq , 1.5µm Process · Low TCR Resistor Module · ProToDuctionTM Option for fast prototypes · Standard Cells Library Process Parameters 2µm 5volts & 3volts Units Metal I pitch (width/space , thickness 325 Å Inter poly oxide thick. 500 Å Via Description The 2µm P-Well process


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JESD22-A102

Abstract: DPM 659 DO-160G Unbiased HAST 130, 85 RH, 100 Hrs 92691 44PTQS JESD22-A104 - TEST CONDITION K 11Q2 JESD22-A110 64PTQS
Text: JESD22-A108 SS/ Process Family /Quarter 45 Table 5 ­ Package/Assembly Monitor Reliability Test , Results by Process Technology 4.0um CMOS 1.5um CMOS 0.8um CMOS 0.6um CMOS-SOI(C) 0.35um CMOS (C) Number of , . Reliability Qualification Program The qualifications of new wafer process , packages, and devices are designed , and process /product improvements. Manufacturing Quality is estimated by measuring early life failure , . This sample method identifies defects introduced at the test process step or that have escaped the test


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PDF QR-1222, 92691Tel: 32PQS, 64PQS, JESD22-A102 DPM 659 DO-160G Unbiased HAST 130, 85 RH, 100 Hrs 92691 44PTQS JESD22-A104 - TEST CONDITION K 11Q2 JESD22-A110 64PTQS
1998 - Not Available

Abstract: No abstract text available
Text: 2 Micron CMOS Process Family Features · Double Poly / Double Metal · 4 µm Poly and Metal 1 Pitch · 320 ps Delay per stage (Ring Osc.) Process parameters Process Parameters · 5.5 Volts , 518000 Printed in Canada © Mitel FTI-20-01-Rev.8 April 1998 2 Micron CMOS Process Family (cont'd , 1.5µm Process (5 volts & 3volts) Metal I pitch (width / space) 2/2 µm · ProToDuctionTM , P+ junction depth 0.28 µm The 2µm P-Well process provides flexibility, speed and packing


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PDF 150mm
1996 - 1.2 micron cmos

Abstract: 1.2 Micron CMOS Process Family 12-micron CMOS Process Family
Text: 1.2 Micron CMOS Process Family ® February 1996 Features · · · · · · Process , 12-11 1.2 Micron CMOS Process Family Capacitances (fF/µm2) min. Resistances (/sq.) typ , Twin-tub process ProToDuctionTM Option for prototypes Standard Cell Library 1.2µm 5volts Units , Gate oxide thickness 225 Å Inter poly oxide thick. 390 Å Process Parameters Description The 1.2µm process provides flexibility, speed and packing density needed in mixed signal designs


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1995 - 1.2 Micron CMOS Process Family

Abstract: 1.2 micron cmos P-MOSFET metal oxide in capacitor vertical PNP metal resistor 0.8 Micron CMOS Process Family 0.03 um CMOS technology
Text: 1.2 Micron CMOS Process Family ® June 1995 Features Process Parameters · Double , ) Bvdss min. 0.85 Ids=20nA 11-11 1.2 Micron CMOS Process Family Capacitances (fF/µm2 , thickness 225 Å Inter poly oxide thick. 390 Å Process Parameters Description The 1.2µm process provides flexibility, speed and packing density needed in mixed signal designs. The aggressive design rules on both metal layers are comparable to most 0.8µm processes. A process module can be


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1996 - 68hc26

Abstract: 68hc705p9 68HC05C4 JPC3400 68HC05B6 68HC05C12 68705r3 68hc805b6 68HC705B5 68HC68SE
Text: used to qualify a process /product/ package family ). Once the process driver device is identified, the , specific family . This process average measurement is made by understanding the reliability and quality , associated with all process /package family types. With all of this data, an effective ongoing monitoring , detailed plan to control all processes for a family of products. The Process FMEA is equally important in , describe the basic CMOS process (using both p-channel and n-channel MOSFET transistors) for a given shrink


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1997 - 68hc11pa8

Abstract: 68hc11kg4 68B09E 68HC11PH8 HC711KG4 68HC57 68HC11KA4 HC705B16 motorola 68hc11kg4 68HC11L6
Text: / product / package family ). Once the process driver device is identified, the appropriate stress test programs are put in place to adequately monitor the ongoing process average of the specific family . This , Control Plan, which is a detailed plan to control all processes for a family of products. The Process , describe the basic CMOS process (using both p-channel and n-channel MOSFET transistors) for a given shrink , analog process . CMOS AND HMOS PROCESSES These processes are used for older generation devices. No new


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PDF MRQSY96/D 68hc11pa8 68hc11kg4 68B09E 68HC11PH8 HC711KG4 68HC57 68HC11KA4 HC705B16 motorola 68hc11kg4 68HC11L6
1998 - MICREL

Abstract: No abstract text available
Text: Special Purpose Products Micrel Foundry Process Selection Guide Overview Service Options , duplicates client process · R&D Foundry: Micrel develops new process to meet unique requirements · Semicustom: Micrel technology, client design, Micrel process · Custom: client circuit, Micrel technology, design, and process · Full Service: client specification, Micrel design, technology, process , test, and , foundry capabilities. Process Summary Process Voltage Feature Size Description Bipolar


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1997 - micrel

Abstract: CMOS Process 3um
Text: capabilities. Process Summary Process Bipolar CMOS BiCMOS BCD2 BCD3 BCD5 Voltage 1.5V to 150V 0.8V to 60V , Special Purpose Products Micrel Foundry Process Selection Guide Overview Micrel has offered , process · R&D Foundry: Micrel developes new process to meet unique requirements · Semicustom: Micrel technology, client design, Micrel process · Custom: client circuit, Micrel technology, design, and process · Full Service: client specification, Micrel design, technology, process , test, and packaging. Contact


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1999 - 7 pin dips smps power control ic

Abstract: jfet folded cascode foundry INCOMING MATERIAL INSPECTION procedure bilateral zener diode marking Use High-Voltage Op Amps to Drive Power MOSFETs, outgoing raw material inspection procedure transistors diodes ics cross reference MPD8021 micrel 1993 MPD8020
Text: , Micrel extended its process and foundry capabilities to include a full complement of Bipolar, CMOS , MPD8020 CMOS /DMOS Semicustom High-Voltage Array uses Micrel's proprietary process which combines TTL/ CMOS , your strictest standard of excellence. Micrel's unique process technologies have allowed us to produce , analog and logic CMOS , customized high-voltage PMOS, and high-voltage DMOS power drivers on a single IC , (NASDAQ: MCRL). Building on strengths in process technology and testing, Micrel has expanded and


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Aeroflex UTMC

Abstract: 8252 UTMC ESTIMATE FABRICATION 5962-01517 UTMC Microelectronic Systems
Text: production. As a result of the wafer foundry and process change (1.5µm to 0.35µm CMOS ), differences in AC , December 2, 2002 Dear Customer: Aeroflex UTMC Microelectronic Systems Inc. (UTMC) appreciates your interest and use of our products, specifically the RadHard Family of PROMs. The purpose of this letter is to inform you that UTMC is proceeding with migrating the 256K RadHard PROM, both 3 and 5 volt versions (Standard Microcircuit Drawings 5962-96891 and 5962-01517), to a new wafer fabrication facility


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1998 - 1.2 Micron CMOS Process Family

Abstract: FTI-12 P-MOSFET 4800 mosfet mosfet 4800
Text: 1.2 Micron CMOS Process Family Process parameters 1.2µm 5volts Metal I or II pitch (width/space , -12-01-Rev.8 20 April 1998 1.2 Micron CMOS Process Family [cont'd] Resistances ( /sq.) Capacitances (fF , thickness The 1.2µm process provides flexibility, speed and packing density needed in mixed signal , , · 2.4 µm Poly and Metal I Pitch, · 5.5 Volts Maximum Operating Voltage, · Twin-tub process on , available, · . Low leakage process · Standard cell library available 1.2 / 1.2 Metal III pitch


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1000 "direct replacement"

Abstract: 5962-96891 8252 JORDAN utmc UTMC Microelectronic Systems
Text: August 1, 2002 Dear Customer: Aeroflex UTMC Microelectronic Systems Inc. (UTMC) appreciates your interest and use of our products, specifically the RadHard Family of PROMs. The purpose of this letter is to inform you that UTMC is migrating the 256K RadHard PROM, both 3 and 5 volt versions , products currently in QML Q and V production. As a result of the wafer foundry and process change (1.5µm to 0.35µm CMOS ), differences in AC electrical performance were unavoidable. UTMC will keep you


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1998 - 1.2 Micron CMOS Process Family

Abstract: No abstract text available
Text: 1.2 Micron CMOS Process Family Process parameters 1.2µm 5volts Metal I or II pitch (width/space , 518000 Printed in Canada © Mitel FTI-12-01-Rev.8 20 April 1998 1.2 Micron CMOS Process Family , Volts Maximum Operating Voltage, · Twin-tub process on P-type or N-type wafers, · ProToDuctionTM Option for low cost prototypes, · Triple Metal option available, · Low leakage process . · Standard cell , thickness Inter poly oxide thickness Description The 1.2µm process provides flexibility, speed and


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2001 - small signal transistor MOTOROLA DATABOOK

Abstract: XC2S50 XC2S30 XC2S150 XC2S15 XC2S100 XAPP120 Xilinx SPARTAN SPARTAN XC2S50 CONTRAST ENHANCEMENT VHDL
Text: viewed as the Gate Array replacement. The Spartan family from Xilinx offers many of the features that , designers. With the advance in process technology and a simpler design flow, FPGAs have reached , / Performance Gap Between FPGAs and Gate Arrays The Spartan family (Spartan-XL and Spartan-II) is the , ranges between 86 to 284, with a wide variety of popular packages. The family incorporates ASIC-like , frequencies up to 200 MHz. The Spartan-II series is made from an advanced process technology (0.22µ down to


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PDF XAPP120 small signal transistor MOTOROLA DATABOOK XC2S50 XC2S30 XC2S150 XC2S15 XC2S100 XAPP120 Xilinx SPARTAN SPARTAN XC2S50 CONTRAST ENHANCEMENT VHDL
1999 - ltx credence tester

Abstract: AMI 602 verilog code for UART with BIST capability R80186 credence tester "processor 8051" military relay M8251A Great Mixed-signal Technologies M82530
Text: 1.5µm/3.5µm Mixed-Signal Process AMI's CMOS , 1.5µm digital/3.5µm analog process is a flexible , makes the process of building a comprehensive library prohibitive, if not impossible. There are only , , turnkey process , AMI gives system designers the best means to specify their own mixed-signal ICs and , process easier than it has ever been before. MS-MASTER takes a top-down approach to mixed-signal design , invisible to the system designer. Mixed-signal design may not be an automated, turnkey process , but for AMI


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PDF GA99045 CX6/99 ltx credence tester AMI 602 verilog code for UART with BIST capability R80186 credence tester "processor 8051" military relay M8251A Great Mixed-signal Technologies M82530
2012 - Not Available

Abstract: No abstract text available
Text: form. Previously agreed upon customer specific change process requirements or device specific , Family : Change Type: PCN #: 13th January, 2012 12th April, 2012 Analog Semiconductors , DESCRIPTION OF CHANGE This PCN is being issued to notify customers that Diodes is in the process of


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PDF AP2182AMPG-13 AP2182ASG-13 AP2182MPG-13 AP2182SG-13 AP2186MPG-13 AP2186SG-13 AP2191DFMG-7 AP2191DM8G-13 AP2191DMPG-13 AP2191DSG-13
2002 - max785

Abstract: DG302 to220 DG301 to220 st 9548 st 9635 MAX232 integrated chips max232 MTBF calculation MAX232 mtbf MAX333 equivalent MAX232ACPE
Text: , metal-gate CMOS process . It has conservative design rules, but is appropriate for many SSI and MSI circuit , 12-micron, 44V, metal-gate CMOS process , used exclusively to produce our analog switch product line. MV2 MV2 is a 5-micron, 44V, silicon-gate CMOS process , also used in our analog switch production line. SG3, SG5, and SG1.1 SG3 is a 3-micron, 12V, silicon-gate CMOS process . SG5 is a 5-micron, 20V, silicon-gate CMOS process . SG1.2 is a 1.2-micron, 6V, silicon-gate CMOS process . SG3, SG5, and SG1.2 have


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