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Part Manufacturer Description Datasheet Download Buy Part
8407301EA Texas Instruments Hex D-type Flip-Flops With Clear 16-CDIP -55 to 125
TPS3707-30D Texas Instruments Processor Supervisory Circuit With Power-Fail 8-SOIC -40 to 85
M38510/07301BDA Texas Instruments Quadruple 2-Input Positive-NOR Gates 14-CFP -55 to 125

0730-2P Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1AV3A

Abstract: H11AV1A H11AV2A H11AV1 H11AV2 H11AV3 H11AV3A 1av3 0730-2P VDE0750TI
Text: and clearance requirements, for business machine applications per VDE standard 0730-2P. The HI 1 AVI A


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PDF H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV2 1AV3A H11AV1A H11AV1 H11AV3 H11AV3A 1av3 0730-2P VDE0750TI
1AV3A

Abstract: No abstract text available
Text: machine applications per VDE standard 0730-2P. T he H11AV1A, H11AV2A and H I 1AV3A are lead-formed


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PDF 74bbfl51 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A 1AV3A
H11AV1A

Abstract: H11AV1 H11AV2 H11AV3 H11AV2A H11AV3A 0730-2P
Text: G E SOLID STATE 01 DE|3fl750fll 0an70fa a f O p to e le c tr o n ic s p e c ific a tio n s . Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State HllAV series consists of a gallium arsenide, infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. The construction provides guaranteed internal distance for VDE creep and clearance requirements, for business machine applications per VDE standard 0730-2P. The H11AV1A, H 11AV2A


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PDF 3fl750fll 0an70fa 0730-2P. H11AV1A, 11AV2A 11AV3A H11AV2 H11AV3. H11AV1, H11AV2, H11AV1A H11AV1 H11AV3 H11AV2A H11AV3A 0730-2P
H11AV2A

Abstract: h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
Text: ard 0730-2P. T h e H11AV1A, H11AV2A a n d HI1AV3A are lead-form ed versions o f th e H11AV1, H11AV2 a


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PDF H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
H11AV1A harris

Abstract: H11AV2A
Text: applications per V D E standard 0730-2P. The H I l AVI A, H H A V 2 A and H I1A V 3A are lead-form ed versions


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PDF 43G2271 H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. 92CS-42662 92CS-429S1 H11AV1A harris H11AV2A
eh11a

Abstract: 1AV Series H11AV1A H11AV3A H11AV2A H11AV3 H11AV2 H11AV1 0730-2P 11AV2
Text: Optoisolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AV series consists o f a gallium arsenide, in fra re d em itting d io d e co u p led w ith a silicon p h o to tra n sisto r in a dual in-line package. T h e co n struction provides g u a ra n te e d in tern al distance for VDE creep a n d clearan ce req u irem en ts, for business m achine applications p er VDE sta n d ard 0730-2P.


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PDF H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A H11AV3A eh11a 1AV Series H11AV1A H11AV3 H11AV2 H11AV1 0730-2P 11AV2
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