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3SK191

Abstract:
Text: VOIS +0.5, "6 V Gaie 2 to source voltage Vç?s +0.5.-6 V Drain current fo so ITI A, Channel power , .:sinri> Vus = 5V. Vois = 0. lo = I00;iA .4 V Forward Iransfcr admittance lyrJ Vos = ?v. Ve« = r>. 1 n = 10mA. /= IkH/. 10 — — mS Input capacitance Ci„ Vos = 5V. Vois = = - Vois = o. 1rs = 10mA 12 IA.6 dB Noise figure NF / - 900Mi 1/. ].5 3.0 UR " M ilk my ;s '


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PDF 3SK191 SKI91 3SK191
3SK291

Abstract:
Text: ID, 10T 1998-10-28 2/5 TOSHIBA 3SK291 id - VDS COMMON SOURCE VG2S = 4.5V To 9«;or s VoiS , . 1 2 4 6 8 DRAIN-SOURCE VOLTAGE VDS (V) ID - vois 10 COMMON SOURCE VDS=6V Ta = 25°C VG2 S = 4 , GATE 1-SOURCE VOLTAGE VQIS (V) |Yfe| - VOIS COMMON SOURCE VDS-6V Ta = 25Â


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PDF 3SK291 016pF
3SK103

Abstract:
Text: source breakdown voltage V<ôft>osx Vois - a -5V. 1» = 20CJÎA. 15 — — Gate I lo source breakdown , ;9R)C2iS Ig? * ± KJpA. V{;iS = Vus=0 ±10 — — V Gute 1 cutoff current l<;tss Vois = îSV. VGiS = VDS = 0 — — ±ieo H A Gate 2 cutoff current Ickss Vois ■îXV. Vois = Vos = 0 — ±i0o H A


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PDF 3SK138 25aCj 900MH/ 3SK103. 3SK103 3SK138
90CV

Abstract:
Text: (iliade Vois ±10 V Diam current b 35 m A Channel power dissipation 150 mW Channel Icmjxraiuie 125 , Condition min typ. mav Unit Ornili to source breakdown voltage V,(lK >l>SX lo = 2Ö0;tA. Vois m V,i:s  , ¿sv. Vois Vw = 0 " 1 ±100 H A Gaie 1 io source cuioff voltage Voi sum V„s = IÛV. Xqx = 3V, in - lOOpA _ -1.(1 v Gmc 2 to source outwit voltage VCÏSMO Vi>i = 10V. Vois = »V. I„ . 100.uA — -1.5


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PDF 3SK194 90C-V 90CV 3SK194 k194
dual-gate

Abstract:
Text: , ID Cross modulation (undesire signal level) - V0is characteristics against ID , lyfsl - Vois , the I d - Vois (or lyfsl Vois ) characteristic, this is the point where the rearstage FET starts to , V02s becoming smaller, it moves close to Vois rom, and the cross modulation tends to be worse. However , dual-gate FET. The point's position on Vois shows similar movement against VG 2s as point B. Also, the , inevitably, tertiary order term/primary order term equal to zero. Also, the Vois range o f these points is


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PDF m2E22 dual-gate 2f3 transistor M2E2
3SK22

Abstract:
Text: # 1020 -2.4 -1.6 -as 0 +C18 vois (y) STATIC CHARACTERISTICS (3) y - xmm COMMON SOURCE 0l,02 , ) « m 1 1 1 .y-*«» COMMON SOURCE 02 INPUT VoiS -0 Ta«25t: VG 2« —a7 v i , €”2.0 -1.6 f- H • y-*M«E voiS (V) s 14 a 12 a? 1U K H ^ V «r A n W 4 2 n


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PDF 100MHz) 100MHz jzf58MAX. 95UAX VES-10 f-200MHz, 3SK22 transistor 3l2 3SK22-Y 10ID 3SK2 nf 0102
3SK153

Abstract:
Text: ) 1998-10-28 2/4 TOSHIBA 3SK153 ID - vois ID - VG2S COMMON SOURCE VDS=6V Ta = 25°C — V( 52S = 4V â , 1.5 . 1 lYfel - VOIS Gps, NF - YDS -2-10 1 2 3 GATE 1


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PDF 3SK153 025pF 3SK153 200-I 52S marking SK153
Marking H2

Abstract:
Text: DRAIN-SOURCE VOLTAGE VDS (V) 2 2001-05-31 TOSHIBA 3SK257 ID - vois ID - VG2S COMMON SOURCE VDS=6V Ta = , - 2.5 2.0 1.5 lYfel - VOIS COMMON SOURCE VdS=6V Ta = 25°C 0 12 3 GATE 1


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PDF 3SK257 Marking H2 3SK257
3SK137V

Abstract:
Text: Unit Dram to source voltage Vp,s 15 V Gaie 1 10 source voilage Vois ±10 V G:iic 2 m source voilage , |»SX Vois = Vcìs = - 5V. lo = 200|.iA. 15 — — V (»ate 1 to mi 11 rcc breakdown voltage , loa ± lOjiA. V(jjs = VJÌS E 0 ±10 — — V Gate 1 cuioff current Igiss Vois = ±8V. VC;s = Vtó =


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PDF 3SK137V 200MHz 3SK137V
5933WA

Abstract:
Text: £ z: o o o z o cc < £ a; B 0 10 20 30 40 20 60 A .F. INPUT VOLTAGE GRID-TO-GRID ( VOIS R.M.S , GRID-TO-GRID ( VOIS R.M.S.) i±Hd CURVE No. 307-209 VALVE TYPE 807 PUSH-PULL aASS "Aft,* AMPLIFIER POWER , INPUT VOLTAGE GRID-TO-GRID ( VOIS R.M.S.) minim iH-J IH l+j+^ffl^ VALVE TYPE: 807 PUSH-PULL CLASS , -4,2«)OHMS CURVE No. 307-218 3RD 0 10 20 30 40 50 60 A .F. INPUT VOLTAGE GRID-TO-GRID ( VOIS R.M.S.) 0 10 20 30 40 50 60 A .F. INPUT VOLTAGE GRID-TO-GRID ( VOIS R.M.S.) CURVE No. 307 23Ô VAIVE TYPE


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PDF
3SK259

Abstract:
Text: '© o o VG2S VDS ò Vois 950.8mm SILVER PLATED COPPER WIRE AIR TRIMMER TTA25A200A (MURATA MFG. Co , 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 1998-06-23 2/4 TOSHIBA 3SK259 ID - vois ID - VG2S 60 50 40 30 , _. 2.5 2 1.5 . 1 lYfel - VOIS 24 20 16


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PDF 3SK259 025pF gat24
Not Available

Abstract:
Text: ) DRAIN-SOURCE ö I < ö Id - Vois Id - VG2S VOLTAGE V d S (V) DRAIN CURRENT ID (mA) DRAIN-SOURCE VOLTAGE V , GATE2-SOURCE VOLTAGE V q 2S (V) - COMMON SOURCE V D S -6V VOIS : V g 2S = 4V lD = 10mA f= 1MHz Ta = 25°C 4


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PDF 3SK127
MM58248

Abstract:
Text: BLANKING CONTROL' 20 OUTPUT BUFFERS - Vois DATA in " 20-BIT SHIFT REGISTER .DATA OUT , p p -0 .5 2.8 -1 0 0.4 10 15 pF VDD = 5.5V, VSS = 0V VD|s = - 2 5 V Vois = -4 0 V VD|S = -5 5 V Vois = -2 5 V V diS = 40V VD|S = -5 5 V 60 70 80 3.0 2.6 2.3 V dis Output On , V dd = 5.5V, Iq ut = Open Circuit, - 5 5 V s Vois <: -2 5 V " 4 0 0 jxA. N o te 1: 7 4 L S T T L


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PDF MM58242 MM58242 28-pin 20-digit MM58248, MM58248
3SK249

Abstract:
Text: : lOOOpF è F.B RFC 2 lOOOpF l~20pF CASE a o 'O o o ft o 'O o o VG2S VDS ò Vois 950.8mm SILVER PLATED , 2.5 o 1.5 | 0 1 2 3 4 5 GATE 1-SOURCE VOLTAGE VQIS (V) |Yfe| - VOIS Q


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PDF 3SK249
SGM2016M

Abstract:
Text: ,0V i ¡¡/ (Vos = 5 V) Vgzs = 1.5 >v H y y i/ ì — J -2.0 -1.5 -1.0 0.5 Vois - , (Vos = E V) / M/ / Â -2.0 -t.5 -1.0 -0.5 Vg?s - Gate 2 to source voltage (V) Vois


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PDF SGM2016M/P1 SGM2016M/P 900MHz SGM2016M Sony Semiconductor SGM2016P sony 174A b 772 p NF 935 HA 1166 E-9217 dual-gate sony tuners
3SK274

Abstract:
Text: -2.0 -1.6 -1.2 -0.8 -0.4 0 GATE2-SOURCE VOLTAGE VG2S 1997-05-12 3/5 TOSHIBA 3SK274 I Yfel - VOIS I , -1 30 25 20 15 10 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0 GATE 1-SOURCE VOLTAGE Vois (V) 0 H


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PDF 3SK274 800MHz
3SK259

Abstract:
Text: without notice. 881 TOSHIBA 3SK259 ID - vois ID - VG2S 60 50 40 30 20 10 COMMON SOURCE VDS , //// / 2 Vs 1.5 M y A ft 1 — lYfel - VOIS 24 20 16 12


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PDF 3SK259 025pF 3SK259
3SK259

Abstract:
Text: 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE VDS (V) 2 2001-05-31 TOSHIBA 3SK259 ID - vois ID - VG2S , / / , 2.5 2 1.5 . 1 lYfel - VOIS


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PDF 3SK259 025pF 3SK259 Marking H2
DS7838

Abstract:
Text: Volb Low Level Bus Voltage Vois = 0.8V, Vin = 2V, lBUS = 50 mA 0.4 0.7 V l|HB Maximum Bus Current V,N , , l0L = 16 mA 0.25 0.4 V 'os Output Short Circuit Current Vois = 0.8V, V|N = 0.8V, vBUs = o.5V, Vos = 0V, Vcc = Vmax. (Note 4) -18 -55 mA Ice Supply Current Vois = ov, V|N = 2V, (Per Package) 50 70


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PDF DS7838/DS8838 DS7838 DS8838J
3SK126

Abstract:
Text: ) 1998-10-28 2/4 TOSHIBA 3SK126 ID - vois lYfel - VOIS 40 32 24 16 - lDSS=4-2mA / / -


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PDF 3SK126 450MHz 50MHz 3SK126
SGM2004M

Abstract:
Text: 25°C) Id vs. Vds ( >/G2S= 1.5 V) ^ 111 - K r — V" Vois «OV — 0.4 V , ® SGM2004M Id vs. Vg2s gm vs. Vgis < E 0 1 0 -20 (Vc s = 5V) Vois OV - 04V


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PDF SGM2004M SGM2004M OT-143 M-254 50MIL) 127mm "GaAs N-channel Dual Gate" sgm2004 UA 471 CN 100MIL ALSV Sony 104A
3SK28

Abstract:
Text: vOis = vaaS = 0 4.5 - - mU A^g , COMMON SOURCE 02 INPUT VoiS - o Ta -251C —07 -1.4 £ -2.1


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PDF 100MHz 100MHz) 3SK28 VDS-10V, 3SK28 38K28 10ID 251C 3SK 49 ta1028 transistor BC 307
L0UA

Abstract:
Text: HITACHI 3SK154 SILICONI N-CHANNEL DUAL GATE MOS FET VHF AMPLIFIER VHF TV T'JMER RF AMPLIFIER it'-iï , J.9 c»»i o.jj.i .0,18-5« ^ : im P-*:?; j|. ; il!." IO» D.B5 Si uS-1 d| U" Ir' I. Scwvc 3 Cj:Mt I .1. Caie ; A Dr:iiii (DinxiisKiir i." mini (MPAK-4) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) hem Symbol 3SKI54 Unii Drain lo source voltage VQs>: 15 V Gaie I to souicc voltage Vois , =25°C) ttem Svmhol Test Condition »tin. typ. mus. Unit Drain to «.oiircc bncakdown volcage VlûR>DSX Vois =


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PDF 3SK154 3SKI54 200MHz 3SK96. L0UA 3SK96 3SK154
2SK1964

Abstract:
Text: Field Effect Transistors ■GaAs MES(Metal Semiconductor) FETs # For V/UHF Absolute Maximum Ratings (Ta =25 °C) Electrical Characteristics (Ta =25 °C) Application Type No. Vds (V) Vois Vg2S (V) P (mW) PG NF PG, NF Conditions Package * Vgs (V) typ. (dB) typ. (dB) Vds (V) Vg2(V) Id (mA) f (GHz) No. 3SK241 13 -6 -6 200 19 1.5 5 1.5 10 0.8 Mini Type (4 pins) Dil (a) 3SK272 13 -6 -6 150 16 1.8 5 1.5 10 0.8 S Mini Type (4 pins) D6 UHFRF 3SK273 13 -6 -6 200 16 1.8 5 1.5


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PDF 3SK241 3SK272 3SK273 A3SK287 A3SK282 2SK690 25dBm 2SK1964 2SK1963 3sk287 2SK1962 2SK649 D37B
22BW

Abstract:
Text: BLANKING CONTROL" 32 OUTPUT BUFFERS - Vois DATA IN ' M 32-BIT SHIFT REGISTER DATA , , Vois -5 5 V 150 10 HA mA Logic O' Logic ' 1' Data Output Logic Levels Logic 'O' Logic ` , 0 V Vois = - 5 5 V VD|S = -2 5 V Vqis = -4 0 V Vois = - 5 5 V Vqo = 5.5V, Io u t " Open Circuit, -5 , · CLOCK 29 -O U T P U T 32 VoiS Vdd (5V) n 3 Z> Z> o Z> Z> o Z> o -r Top View


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PDF MM58241 MM58241 40-pin 32-digit 22BW MM58248
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